WO2021227227A1 - 显示面板及其制作方法、掩模版组 - Google Patents

显示面板及其制作方法、掩模版组 Download PDF

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Publication number
WO2021227227A1
WO2021227227A1 PCT/CN2020/100986 CN2020100986W WO2021227227A1 WO 2021227227 A1 WO2021227227 A1 WO 2021227227A1 CN 2020100986 W CN2020100986 W CN 2020100986W WO 2021227227 A1 WO2021227227 A1 WO 2021227227A1
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WIPO (PCT)
Prior art keywords
layer
light
substrate
display area
photosensitive
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Application number
PCT/CN2020/100986
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English (en)
French (fr)
Inventor
郭硕
王璟
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US17/267,484 priority Critical patent/US11805665B2/en
Publication of WO2021227227A1 publication Critical patent/WO2021227227A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80517—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • This application relates to the field of display technology, in particular to the manufacture of display devices, and in particular to a display panel, a manufacturing method thereof, and a mask set.
  • OLED Organic Light-Emitting Diode
  • the light transmittance of the existing anode layer, light-emitting layer, cathode layer and other film layers is low, so that the under-screen camera or other photosensitive devices cannot capture enough light and cannot achieve corresponding functions well.
  • the purpose of this application is to provide a display panel, a manufacturing method thereof, and a mask set.
  • the anode layer is configured to include a first light-transmitting layer and a reflective layer that are stacked on a part corresponding to the display area.
  • the part of the layer corresponding to the photosensitive area is set to include a second light-transmitting layer, which solves the problem that the upper film layer of the under-screen camera or other photosensitive devices in the existing OLED display screen is thicker, resulting in lower light transmittance , So that the under-screen camera or other photosensitive devices can not achieve the corresponding function.
  • An embodiment of the present application provides a display panel, the display panel includes a display area and a photosensitive area, and the display panel includes:
  • An anode layer is provided on one side of the substrate, the portion of the anode layer corresponding to the display area includes a first light-transmitting layer and a reflective layer that are stacked, and the anode layer is The portion corresponding to the photosensitive area includes a second light-transmitting layer;
  • the photosensitive device is arranged on the side of the substrate away from the anode layer, and the photosensitive device is arranged on the photosensitive area.
  • the substrate includes:
  • the second substrate is provided in the display area, and the thickness of the first substrate is smaller than the thickness of the second substrate.
  • the display panel further includes:
  • the thin film transistor layer is provided on a side of the anode layer close to the substrate, the thin film transistor layer includes a plurality of thin film transistors, and the plurality of thin film transistors are provided in the display area.
  • the display panel further includes:
  • the cathode layer is arranged on the side of the anode layer away from the substrate, and the cathode layer is arranged on the display area.
  • the anode layer when the first light-transmitting layer and the second light-transmitting layer are arranged in the same layer, the anode layer further includes:
  • the third light-transmitting layer, the third light-transmitting layer is arranged on the side of the second light-transmitting layer and the reflective layer away from the photosensitive device.
  • the embodiment of the present application provides a mask set, the mask set is used to make the display panel as described above, the display panel includes a display area and a photosensitive area, and the mask set includes a first mask for For processing the photoresist layer corresponding to the display area and the photosensitive area, the first mask includes:
  • a first opening, the first opening is arranged opposite to the photosensitive area, and is used for exposing a part of the photoresist layer located in the photosensitive area;
  • a first shielding portion is disposed opposite to the display area, the photoresist layer is located above the reflective film, and the first shielding portion is used for shielding the photoresist layer located in the display area
  • the portion of the photoresist layer located in the display area is retained, and the portion of the reflective film located in the display area is retained to form a reflective layer.
  • the reticle set further includes a second reticle, and the second reticle includes:
  • a second shielding portion, the second shielding portion is arranged opposite to the photosensitive area, and is used to block the deposition of vapor deposition material on the photosensitive area during evaporation;
  • the second opening is arranged opposite to the display area, and is used for depositing the vapor deposition material on the display area to form a cathode layer.
  • the embodiment of the present application provides a method for manufacturing a display panel, the method is used for manufacturing the display panel as described above, the display panel includes a display area and a photosensitive area, and the method includes:
  • An anode layer is formed on the substrate, a portion of the anode layer corresponding to the display area includes a first light-transmitting layer and a reflective layer that are stacked, and a portion of the anode layer corresponding to the photosensitive area includes Second light-transmitting layer;
  • a photosensitive device is arranged on the side of the substrate away from the anode layer, and the photosensitive device corresponds to the photosensitive area.
  • the anode layer is formed on the substrate, and the portion of the anode layer corresponding to the display area includes a first light-transmitting layer and a reflective layer that are stacked, and the anode layer is The step of the portion corresponding to the photosensitive area including the second light-transmitting layer includes:
  • first light-transmitting layer and the second light-transmitting layer Forming the first light-transmitting layer and the second light-transmitting layer on the substrate, and sequentially forming a reflective film and a photoresist layer on the first light-transmitting layer and the second light-transmitting layer,
  • the first light-transmitting layer is provided in the display area
  • the second light-transmitting layer is provided in the photosensitive area
  • the reflective film and the photoresist layer are provided in the display area and the photosensitive area ;
  • a first mask is used to expose the photoresist layer.
  • the first mask includes a first opening and a first shielding portion.
  • the first opening is disposed opposite to the photosensitive area for exposing the In the part of the photoresist layer located in the photosensitive area, the first shielding portion is arranged opposite to the display area and used to shield the part of the photoresist layer located in the display area;
  • the part of the reflective film that is not covered by the photoresist pattern is removed, and the part of the reflective film covered by the photoresist pattern is retained to form the reflective layer.
  • the step of removing the part of the reflective film that is not covered by the photoresist pattern, and leaving the part of the reflective film covered by the photoresist pattern to form the reflective layer it also includes:
  • a third light-transmitting layer is formed on the reflective layer and the second light-transmitting layer.
  • the method before the step of arranging a photosensitive device on the side of the substrate away from the anode layer, the method includes:
  • the substrate is processed to form a first substrate and a second substrate, the thickness of the first substrate is smaller than the thickness of the second substrate, and the first substrate corresponds to the photosensitive region ,
  • the second substrate corresponds to the display area.
  • the anode layer is formed on the substrate, and the portion of the anode layer corresponding to the display area includes a first light-transmitting layer and a reflective layer that are stacked, and the anode layer is Before the step where the portion corresponding to the photosensitive area includes the second light-transmitting layer, it includes:
  • a thin film transistor layer is formed on the substrate, the thin film transistor layer includes a plurality of thin film transistors, and the plurality of thin film transistors are arranged in the display area.
  • the anode layer is formed on the substrate, and the portion of the anode layer corresponding to the display area includes a first light-transmitting layer and a reflective layer that are stacked, and the anode layer is After the step of the portion corresponding to the photosensitive area including the second light-transmitting layer, the method includes:
  • a cathode layer is formed on the anode layer, and the cathode layer is provided in the display area.
  • the step of forming a cathode layer on the anode layer, and providing the cathode layer in the display area includes:
  • a second mask is used to deposit vapor deposition material on the anode layer.
  • the second mask includes a second shielding portion and a second opening.
  • the second shielding portion is disposed opposite to the photosensitive area.
  • the second opening is disposed opposite to the display area, and is used for depositing the vapor deposition material on the display area to form the cathode layer .
  • the present application provides a display panel, a manufacturing method thereof, and a mask set.
  • the display panel includes a display area and a photosensitive area, and the portion of the anode layer corresponding to the display area includes a first light-transmitting layer and a reflective layer that are stacked, The portion of the anode layer corresponding to the photosensitive area includes a second light-transmitting layer, and the photosensitive device is arranged in an area corresponding to the photosensitive area on the side of the substrate away from the anode layer.
  • FIG. 1 is a schematic cross-sectional view of a first display panel provided by an embodiment of the application.
  • FIG. 2 is a schematic cross-sectional view of a second display panel provided by an embodiment of the application.
  • FIG. 3 is a schematic cross-sectional view of a third display panel provided by an embodiment of the application.
  • FIG. 4 is a schematic cross-sectional view of a fourth display panel provided by an embodiment of the application.
  • FIG. 5 is a schematic cross-sectional view of a fifth display panel provided by an embodiment of the application.
  • FIG. 6 is a schematic diagram of an application scenario of a mask set provided by an embodiment of the application.
  • FIG. 7 is a schematic diagram of an application scenario of another mask set provided by an embodiment of the application.
  • FIG. 8 is a flowchart of a manufacturing method of a display panel provided by an embodiment of the application.
  • FIG. 9 is a flowchart of another method for manufacturing a display panel provided by an embodiment of the application.
  • connection should be understood in a broad sense, for example, it may be a fixed connection, a detachable connection, or an integral connection; It can be a mechanical connection, an electrical connection, or mutual communication; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the internal communication between two components or the interaction between two components.
  • connection should be understood in a broad sense, for example, it may be a fixed connection, a detachable connection, or an integral connection; It can be a mechanical connection, an electrical connection, or mutual communication; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the internal communication between two components or the interaction between two components.
  • the present application provides a display panel, and the display panel includes but is not limited to the following embodiments.
  • the display panel 00 includes a display area 01 and a photosensitive area 02
  • the display panel 00 includes: a substrate 100; an anode layer 200, the anode layer 200 is disposed on the On one side of the substrate 100, the portion of the anode layer 200 corresponding to the display area 01 includes a first light-transmitting layer 201 and a reflective layer 202 that are stacked, and the anode layer 200 corresponds to the photosensitive area 02
  • the part includes the second light-transmitting layer 203; the photosensitive device 300, the photosensitive device 300 is arranged on the side of the substrate 100 away from the anode layer 200, and the photosensitive device 300 is arranged on the photosensitive area 02.
  • the display area 01 may be set to surround the photosensitive area 02 in whole or in part.
  • the photosensitive area 02 may be located in the upper left corner, the upper right corner or the middle position of the first few rows of the display panel 00.
  • the specific shape of the photosensitive area 02 can be set according to the vertical projection shape of the photosensitive device 300, and the size of the photosensitive area 02 is not less than the size of the photosensitive device 300 to ensure the normal operation of the photosensitive device 300.
  • the photosensitive device 300 may work as a separate device, or may be integrated into a camera or a fingerprint recognition device to work.
  • the portion of the anode layer 200 corresponding to the display area 01 includes the first light-transmitting layer 201 and the reflective layer 202 that are stacked, the portion of the anode layer 200 corresponding to the photosensitive area 02
  • the second light-transmitting layer 203 is included, that is, the thickness of the portion of the anode layer 200 corresponding to the display area 01 is greater than the thickness of the portion of the anode layer 200 corresponding to the photosensitive area 02, the anode layer 200
  • the light transmittance of the portion corresponding to the photosensitive area 02 is greater than the light transmittance of the portion corresponding to the display area 01.
  • the first light-transmitting layer 201 and the second light-transmitting layer 203 can be arranged in the same layer, and at least the second light-transmitting layer 203 is guaranteed to be light-transmissive, so that external light can be It enters the photosensitive device 300 through the second light-transmitting layer 203.
  • the thickness of the first light-transmitting layer 201 and the second light-transmitting layer 203 may be equal, and the constituent materials of the two may be the same, for example, the first light-transmitting layer 201 and the second light-transmitting layer 203
  • the layer 203 can be formed on the substrate 100 using the same material at the same time to improve the production efficiency.
  • a transparent conductive film can be formed on the substrate 100 or another film layer by a deposition method.
  • the transparent conductive film may be an ITO (Indium Tin Oxide, indium tin oxide) film or an aluminum-doped zinc oxide film.
  • the constituent material of the reflective layer 202 can be a conductive material with high reflectivity, so as to improve the reflectivity of external light or light emitted by the light-emitting device, and improve the luminous brightness of the display panel, for example, the reflective layer 202
  • the constituent material of may be simple metal, specifically, simple silver may be used to make the reflective layer 202.
  • the anode layer 200 further includes a third light-transmitting layer 204,
  • the third light-transmitting layer 204 is disposed on a side of the second light-transmitting layer 203 and the reflective layer 202 away from the photosensitive device 300.
  • the part of the third light-transmitting layer 204 corresponding to the photosensitive area 02 has light-transmitting properties, so that external light can enter through the second light-transmitting layer 203 and the third light-transmitting layer 204 To the photosensitive device 300.
  • the surface of the third light-transmitting layer 204 away from the substrate 100 is a horizontal plane, that is, among the first light-transmitting layer 201, the reflective layer 202, and the third light-transmitting layer 204
  • the sum of the thickness of the part in the display area 01 may be equal to the sum of the thickness of the part in the photosensitive area 02 of the second light-transmitting layer 203 and the third light-transmitting layer 204, so that Flattening the anode layer 200 facilitates the formation of other film layers on the anode layer 200.
  • the composition material and formation method of the third light-transmitting layer 204 may also be the same as the composition material and formation method of the first light-transmitting layer 201.
  • the thickness of the first light-transmitting layer 201 and the second light-transmitting layer 203 may be 50 nanometers
  • the thickness of the reflective layer 202 may be 10 nanometers
  • the third light-transmitting layer 204 is located at all
  • the thickness of the part on the reflective layer 202 is 50 nanometers.
  • the average light transmittance of the portion of the anode layer 200 located in the display area 01 is as high as 83.17%. It is understandable that since the reflective layer 202 is not provided in the photosensitive area 02, the photosensitive area The light transmittance of 02 can be greater than 83.17%.
  • the substrate 100 includes: a first substrate 101, the first substrate 101 is disposed in the photosensitive region 02; a second substrate 102, the second substrate The substrate 102 is disposed in the display area 01, and the thickness of the first substrate 101 is smaller than the thickness of the second substrate 102.
  • the first substrate 101 may be a film with a uniform thickness or the surface of the first substrate 101 close to the photosensitive device 300 may be a curved surface, and the overall thickness of the first substrate 101 may be based on The height of the photosensitive device 300 is set, and the surface shape of the first substrate 101 on the side close to the photosensitive device 300 can be set according to the shape of the photosensitive device 300.
  • the display panel 00 further includes: a thin film transistor layer 400, the thin film transistor layer 400 is disposed on the anode layer 200 on the side close to the substrate 100, the The thin film transistor layer 400 includes a plurality of thin film transistors 401, and the plurality of thin film transistors 401 are disposed in the display area 01.
  • the plurality of thin film transistors 401 are electrically connected to corresponding regions in the anode layer 200 to control the light emission of the corresponding regions in the anode layer 200. It can be understood that the thin film transistor 401 includes a device with extremely low light transmittance, and multiple thin film transistors 401 in the same row or the same column are connected to the same gate line or the same data line to transmit signals.
  • the thin film transistor 401 is not provided in the photosensitive region 02, that is, the region corresponding to the photosensitive region 02 in the thin film transistor layer 400 does not include the thin film transistor 401 with extremely low light transmittance and does not Including the gate line and the data line, that is, this solution avoids arranging the thin film transistor 401 in the area corresponding to the photosensitive area 02 in the thin film transistor layer 400, which can further reduce the amount of light in the photosensitive area 02.
  • the number of metal traces such as the gate lines and the data lines is used to increase the light transmittance of the photosensitive area 02.
  • the display panel 00 further includes: a cathode layer 500, the cathode layer 500 is disposed on a side of the anode layer 200 away from the substrate 100, and the cathode layer 500 is set in the display area 01.
  • the cathode layer 500 may be disposed in the display area 01 to ensure that the display area The picture in 01 can be displayed normally, and the light transmittance of the film layer located above the photosensitive device 300 in the display panel 00 is further improved.
  • the constituent material of the cathode layer 500 may be magnesium silver alloy or lithium aluminum alloy.
  • the active low work function metal and the chemically stable high work function metal can be evaporated together to form the cathode layer 500 , In order to improve the quantum efficiency and stability of the device.
  • the cathode layer 500 may be a metal single layer composed of a single metal substance, and a barrier layer composed of lithium fluoride, cesium fluoride, rubidium fluoride, etc., located between the metal single layer and the corresponding light-emitting device. The two electrodes formed together can obtain higher luminous efficiency and better current-voltage characteristic curve.
  • the cathode layer 500 may include the metal single layer and an organic layer doped with a low work function metal between the metal single layer and the corresponding light emitting device, which can greatly improve the performance of the light emitting device.
  • the present application also provides a reticle set, which is used to manufacture the display panel as described above, and the reticle set includes but is not limited to the following embodiments.
  • the reticle set includes a first reticle 600, and the first reticle 600 is used to process the photoresist corresponding to the display area 01 and the photosensitive area 02 Layer 700
  • the first mask 600 includes: a first opening 601, the first opening 601 is disposed opposite to the photosensitive area 02, and is used for exposing the photosensitive area 02 in the photoresist layer 700 701; the first shielding portion 602, the first shielding portion 602 is disposed opposite to the display area 01, the photoresist layer 700 is located above the reflective film 800, the first shielding portion 602 is used to shield
  • the portion 702 of the photoresist layer 700 located in the display area 01 further retains the portion 702 of the photoresist layer 700 located in the display area 01, and further retains the portion 702 of the reflective film 800 located in the display area 01 to form a reflective layer 802.
  • the size and shape of the first opening 601 can be set according to the specific structure of the photosensitive device 300 described above, and the first opening 601 is used to make the exposed light irradiate the photoresist layer 700
  • the portion 701 located in the photosensitive area 02 is removed after later development, and the portion 801 of the reflective film 800 located in the photosensitive area 02 is removed during the later etching; the first shielding portion 602
  • the first shielding portion 602 is used to prevent the exposure light from being irradiated to the photoresist layer 700 located in the display area 01 Part 702, avoid removing the part 702 after later development, and protect the part of the reflective film 800 located in the display area 01 by the part 702 during the later etching, so that this part remains as the reflective layer 802 Therefore, the light transmittance of the film layer above the photosensitive device 300 is improved.
  • the first reticle 600 is used to expose a part of the photoresist layer 700, so the essence of the first reticle 600 may be an optical mask or called a photomask.
  • the first reticle 600 is a structure in which various functional patterns are made on a film, plastic or glass base material and accurately positioned for selective exposure of the photoresist coating.
  • the reticle set further includes a second reticle 900, and the second reticle 900 includes a second shielding portion 901, and the second shielding portion 901 is connected to the second reticle 900.
  • the photosensitive area 02 is arranged opposite to each other, and is used to block the deposition of evaporation material on the photosensitive area 02 during evaporation; the second opening 902, which is arranged opposite to the display area 01, is used to make The evaporation material is deposited on the display area 01 to form the cathode layer 1000.
  • the second mask 900 may further include a peripheral shielding portion 903, and the peripheral shielding portion 903 It is arranged around the second opening portion 902, and the peripheral shielding portion 903 and the second shielding portion 901 jointly define the vapor deposition area as the display area 01.
  • the size and shape of the second shielding portion 901 can be set according to the specific structure of the photosensitive device 300 described above.
  • the vapor deposition material is deposited on the second opening 902 through the second opening 902. Display area 01 to form the cathode layer 1000. Since the second shielding portion 901 blocks the deposition of the evaporation material on the photosensitive area 02, the cathode layer 1000 has an opening corresponding to the photosensitive area 02 1001. The light transmittance of the film layer above the photosensitive device 300 is improved.
  • the second mask 900 is used to deposit vapor deposition material in a specific area to form the cathode layer 1000, so the essence of the second mask 900 can be a fine metal mask.
  • the main material of the template 900 may be metal or a mixture of metal and resin, and is mainly used for depositing light-emitting materials to form light-emitting devices during the OLED production process, and depositing metal or metal alloy materials to form the cathode layer 1000.
  • the present application also provides a method for manufacturing a display panel, and the method is used for manufacturing the display panel described above.
  • the method includes the following steps.
  • the substrate when the display panel is a flexible OLED display panel, the substrate may be a flexible substrate such as a plastic base. Specifically, polyimide with better heat resistance and stability may be used to make the substrate. The substrate, further, a laminated structure of polymer and nano-inorganic can be used as the substrate to greatly improve the water vapor transmission characteristics of the substrate made of polymer materials alone, and to maintain the substrate Flexible and bendable characteristics.
  • the substrate when the display panel is a rigid OLED display panel, the substrate may be a rigid substrate such as a glass substrate.
  • An anode layer is formed on the substrate, and a portion of the anode layer corresponding to the display area includes a first light-transmitting layer and a reflective layer that are stacked, and a portion of the anode layer corresponding to the photosensitive area Partly includes the second light-transmitting layer.
  • the first light-transmitting layer and the second light-transmitting layer can be arranged in the same layer, and at least the second light-transmitting layer is guaranteed to be light-transmissive, so that external light can enter through the second light-transmitting layer To the photosensitive device.
  • the thickness of the first light-transmitting layer and the second light-transmitting layer may be equal, and the constituent materials of the two may be the same.
  • the first light-transmitting layer and the second light-transmitting layer may be The same material is formed on the substrate at the same time to improve the production efficiency.
  • the portion of the anode layer corresponding to the display area includes a first light-transmitting layer and a reflective layer that are stacked
  • the portion of the anode layer corresponding to the photosensitive area includes a second light-transmitting layer.
  • the thickness of the portion of the anode layer corresponding to the display area is greater than the thickness of the portion of the anode layer corresponding to the photosensitive area, and the portion of the anode layer corresponding to the photosensitive area is transparent
  • the rate is greater than the light transmittance of the portion corresponding to the display area.
  • the step S20 may include the following steps.
  • the first light-transmitting layer and the second light-transmitting layer are simultaneously formed on the substrate by using the same material, and completely cover the display area and the photosensitive area.
  • a deposition method may be used.
  • a transparent conductive film is formed on the entire surface of the substrate or another film layer as the first light-transmitting layer and the second light-transmitting layer.
  • the transparent conductive film may be ITO (Indium Tin Oxide, indium oxide). Tin) film or aluminum-doped zinc oxide film.
  • the constituent material of the reflective film may be a conductive material with high reflectivity, so as to improve the reflectivity of external light or light emitted by the light-emitting device, and improve the luminous brightness of the display panel, for example, the composition of the reflective film
  • the material may be a simple metal, and the simple metal may be a simple silver, and the reflective film may be formed on the first light-transmitting layer and the second light-transmitting layer by using a deposition method.
  • the composition material of the photoresist layer can be a positive photoresist or a negative photoresist.
  • the positive photoresist itself is hardly soluble in the developing solution, and dissociates into small molecules after exposure to form easily soluble
  • the structure of the developer solution; the negative photoresist forms a structure that is not easily soluble in the developer solution after exposure.
  • the photoresist layer can be formed on the reflective film by coating to ensure that the reflective film is completely covered.
  • the first mask includes a first opening portion and a first shielding portion, and the first opening portion is disposed opposite to the photosensitive area for exposing In the part of the photoresist layer located in the photosensitive area, the first shielding portion is disposed opposite to the display area, and is used for shielding the part of the photoresist layer located in the display area.
  • the first mask is for the case where the constituent material of the photoresist layer is a positive photoresist.
  • the size and shape of the first opening portion can be set according to the specific structure of the photosensitive device described above, and the first opening portion is used to make the exposed light irradiate the photoresist layer.
  • the part in the photosensitive area; the first shielding part is the part of the first reticle where the first opening is removed, and the first shielding part is used to prevent the exposure light from irradiating the photoresist layer The part located in the display area.
  • the photoresist layer after exposure can be treated with a developer, and the developer can be selected according to the specific material of the photoresist layer. It is understandable that since only the part of the photoresist layer located in the photosensitive area is exposed, only the part of the photoresist layer located in the photosensitive area will be dissolved in the developer and removed. That is, the part of the photoresist layer that is only located in the display area remains on the reflective film after being developed to form the photoresist pattern.
  • the reflective film can be treated with an etching solution, and the etching solution is used to dissolve the reflective film.
  • the constituent material of the reflective film is silver
  • a mixed acid of phosphoric acid, nitric acid, and acetic acid can be used as The etching solution. It is understandable that since the part of the reflective film located in the photosensitive area is not exposed to the photoresist pattern and is directly exposed to the air, it will be removed after etching, so that only the portion located in the reflective film remains The portion of the display area constitutes the reflective layer.
  • a third light-transmitting layer may be formed on the reflective layer and the second light-transmitting layer.
  • the composition material and formation method of the third light-transmitting layer may also be the same as the composition material and formation method of the first light-transmitting layer.
  • the following steps may be included before the step S20.
  • the thin film transistor layer including a plurality of thin film transistors, and the plurality of thin film transistors are provided in the display area.
  • the plurality of thin film transistors are electrically connected to corresponding regions in the anode layer to control the light emission of the corresponding regions in the anode layer.
  • the thin film transistors include devices with extremely low light transmittance, and multiple thin film transistors in the same row or column are connected to the same gate line or the same data line to transmit signals.
  • the thin film transistor is not provided in the photosensitive region, that is, the region corresponding to the photosensitive region in the thin film transistor layer does not include the thin film transistor with extremely low light transmittance, and does not include the gate electrode.
  • this solution can further reduce the gate line and the data line in the photosensitive area.
  • the following steps may be included after the step S20.
  • the constituent material of the cathode layer can be magnesium silver alloy or lithium aluminum alloy.
  • the active low work function metal and the chemically stable high work function metal can be evaporated together to form the cathode layer.
  • the cathode layer may be a metal single layer composed of a metal element, and a barrier layer composed of lithium fluoride, cesium fluoride, rubidium fluoride, etc., located between the metal single layer and the corresponding light-emitting device.
  • the formed double electrode can obtain higher luminous efficiency and better current-voltage characteristic curve.
  • the cathode layer may include the metal single layer and an organic layer doped with a low work function metal between the metal single layer and the corresponding light emitting device, which can greatly improve the performance of the light emitting device.
  • a second mask may be used to deposit the vapor deposition material on the anode layer.
  • the second mask includes a second shielding portion and a second opening, and the second shielding portion is disposed opposite to the photosensitive area.
  • the second opening is arranged opposite to the display area for depositing the evaporation material on the display area to form The cathode layer.
  • the second mask is used to deposit vapor deposition material in a specific area to form the cathode layer, so the essence of the second mask can be a fine metal mask, the main part of the second mask
  • the material may be metal or a mixture of metal and resin, and is mainly used to deposit light-emitting materials to form light-emitting devices during the OLED production process, and to deposit metal or metal alloy materials to form the cathode layer.
  • the photosensitive device can work as a separate device, or it can be integrated into a camera or a fingerprint recognition device to work.
  • the reflective layer in the anode layer is only provided in the display area, that is, the photosensitive area does not include the reflective layer with a higher reflectivity, and the photosensitive device and the The photosensitive areas are correspondingly arranged, which increases the amount of light entering the photosensitive device and improves the working performance of the photosensitive device.
  • the following steps may be included before the step S30.
  • the substrate is processed to form a first substrate and a second substrate, the thickness of the first substrate is less than the thickness of the second substrate, and the first substrate and the photosensitive substrate The area corresponds, and the second substrate corresponds to the display area.
  • the flexible substrate when the substrate is a flexible substrate, the flexible substrate may be formed on a rigid base first to maintain the stability of the flexible substrate; all related materials are prepared on the flexible substrate. After the layer structure of the substrate, the rigid substrate is removed; then, the step S40 is performed to avoid the unevenness of the film layer above the substrate due to the inconsistent thickness of the substrate in the early stage.
  • the first substrate may be a film layer of uniform thickness or the surface of the first substrate on the side close to the photosensitive device may be a curved surface, and the overall thickness of the first substrate may be based on the photosensitive device
  • the shape of the surface of the first substrate on the side close to the photosensitive device can be set according to the shape of the photosensitive device.
  • the thickness of the second substrate may be equal to the thickness of the substrate before performing the step S40, that is, only the substrate The area in the bottom corresponding to the photosensitive device is processed to form the first substrate.
  • the target area corresponding to the photosensitive device on the side of the substrate close to the photosensitive device may be etched with reference to the formation method of the reflective layer to form the first substrate.
  • an etching solution such as a mixed solution of potassium hydroxide and potassium carbonate, hydrazine hydrate or hexafluoroisopropanol can be used for etching.
  • the target area in the substrate may be polished by physical polishing to form the first substrate.
  • an ion radiation method may be used to irradiate the target area in the substrate to form the first substrate.
  • the target area may be irradiated under the action of heavy ions with the participation of oxygen. Areas are subjected to ion irradiation.
  • the present application provides a display panel, a manufacturing method thereof, and a mask set.
  • the display panel includes a display area and a photosensitive area, and the portion of the anode layer corresponding to the display area includes a first light-transmitting layer and a reflective layer that are stacked, The portion of the anode layer corresponding to the photosensitive area includes a second light-transmitting layer, and the photosensitive device is arranged in an area corresponding to the photosensitive area on the side of the substrate away from the anode layer.

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Abstract

显示面板(00)及其制作方法、掩模版组，显示面板(00)由下至上依次包括感光器件(300)、衬底(100)和阳极层(200)，阳极层(200)中与显示区域(01)对应的部分包括层叠设置的第一透光层(201)和反射层(202,802)，阳极层(200)中与感光区域(02)对应的部分包括第二透光层(203)，感光器件(300)设于感光区域(02)。

Description

显示面板及其制作方法、掩模版组 技术领域
本申请涉及显示技术领域，尤其涉及显示器件的制造，具体涉及显示面板及其制作方法、掩模版组。
 背景技术
OLED（Organic Light-Emitting Diode，有机发光二极管）显示屏的柔性可弯折性质为其进军全面屏带来了巨大优势，其中屏下摄像头技术尤为重要。
然而，现有的阳极层、发光层、阴极层等膜层的透光率较低，导致屏下摄像头或者其它感光器件无法捕捉到足够的光线，无法较好地实现相应的功能。
因此，有必要提供显示面板及其制作方法、掩模版组，增加穿过屏下摄像头或者其它感光器件的光线，以提高OLED显示屏的屏下摄像头或者其它感光器件的工作性能。
 技术问题
本申请的目的在于提供显示面板及其制作方法、掩模版组，通过将阳极层中与所述显示区域对应的部分设置为包括层叠设置的第一透光层和反射层，而将所述阳极层中与所述感光区域对应的部分设置为包括第二透光层，解决了现有的OLED显示屏中屏下摄像头或者其它感光器件的上方膜层较厚，从而导致的透光率较低，以至于屏下摄像头或者其它感光器件无法较好地实现相应的功能的问题。
 技术解决方案
本申请实施例提供显示面板，所述显示面板包括显示区域和感光区域，所述显示面板包括：
衬底；
阳极层，所述阳极层设于所述衬底的一侧，所述阳极层中与所述显示区域对应的部分包括层叠设置的第一透光层和反射层，所述阳极层中与所述感光区域对应的部分包括第二透光层；
感光器件，所述感光器件设于所述衬底远离所述阳极层的一侧，所述感光器件设于所述感光区域。
在一实施例中，所述衬底包括：
第一衬底，所述第一衬底设于所述感光区域；
第二衬底，所述第二衬底设于所述显示区域，所述第一衬底的厚度小于所述第二衬底的厚度。
在一实施例中，所述显示面板还包括：
薄膜晶体管层，所述薄膜晶体管层设于所述阳极层靠近所述衬底的一侧，所述薄膜晶体管层包括多个薄膜晶体管，所述多个薄膜晶体管设于所述显示区域。
在一实施例中，所述显示面板还包括：
阴极层，所述阴极层设于所述阳极层远离所述衬底的一侧，所述阴极层设于所述显示区域。
在一实施例中，当所述第一透光层和所述第二透光层同层设置时，所述阳极层还包括：
第三透光层，所述第三透光层设于所述第二透光层和所述反射层远离所述感光器件的一侧。
本申请实施例提供掩模版组，所述掩模版组用于制作如上任一所述的显示面板，所述显示面板包括显示区域和感光区域，所述掩模版组包括第一掩模版，用于处理与所述显示区域和所述感光区域对应的光阻层，所述第一掩模版包括：
第一开口部，所述第一开口部与所述感光区域相对设置，用于曝光所述光阻层中位于所述感光区域中的部分；
第一遮挡部，所述第一遮挡部与所述显示区域相对设置，所述光阻层位于反射膜上方，所述第一遮挡部用于遮挡所述光阻层中位于所述显示区域中的部分，进而保留所述光阻层中位于所述显示区域中的部分，进而保留所述反射膜中位于所述显示区域中的部分以形成反射层。
在一实施例中，所述掩模版组还包括第二掩模版，所述第二掩模版包括：
第二遮挡部，所述第二遮挡部与所述感光区域相对设置，在蒸镀时，用于阻挡蒸镀材料沉积在所述感光区域；
第二开口部，所述第二开口部与所述显示区域相对设置，用于使所述蒸镀材料沉积在所述显示区域，以形成阴极层。
本申请实施例提供显示面板的制作方法，所述方法用于制作如上任一所述的显示面板，所述显示面板包括显示区域和感光区域，所述方法包括：
提供衬底；
在所述衬底上形成阳极层，所述阳极层中与所述显示区域对应的部分包括层叠设置的第一透光层和反射层，所述阳极层中与所述感光区域对应的部分包括第二透光层；
在所述衬底远离所述阳极层的一侧设置感光器件，所述感光器件与所述感光区域对应。
在一实施例中，所述在所述衬底上形成阳极层，所述阳极层中与所述显示区域对应的部分包括层叠设置的第一透光层和反射层，所述阳极层中与所述感光区域对应的部分包括第二透光层的步骤，包括：
在所述衬底上形成所述第一透光层和所述第二透光层，以及在所述第一透光层和所述第二透光层上依次形成反射膜、光阻层，其中所述第一透光层设于所述显示区域，所述第二透光层设于所述感光区域，所述反射膜和所述光阻层设于所述显示区域和所述感光区域；
采用第一掩模版对所述光阻层进行曝光，所述第一掩模版包括第一开口部和第一遮挡部，所述第一开口部与所述感光区域相对设置，用于曝光所述光阻层中位于所述感光区域中的部分，所述第一遮挡部与所述显示区域相对设置，用于遮挡所述光阻层中位于所述显示区域中的部分；
去除所述光阻层中位于所述感光区域中的部分，并保留所述光阻层中位于所述显示区域中的部分，以形成光阻图案；
去除所述反射膜中未被所述光阻图案覆盖的部分，并保留所述反射膜中被所述光阻图案覆盖的部分，以形成所述反射层。
在一实施例中，所述去除所述反射膜中未被所述光阻图案覆盖的部分，并保留所述反射膜中被所述光阻图案覆盖的部分，以形成所述反射层的步骤之后，还包括：
在所述反射层和所述第二透光层上形成第三透光层。
在一实施例中，所述在所述衬底远离所述阳极层的一侧设置感光器件的步骤之前，包括：
对所述衬底进行处理，以形成第一衬底和第二衬底，所述第一衬底的厚度小于所述第二衬底的厚度，所述第一衬底与所述感光区域对应，所述第二衬底与所述显示区域对应。
在一实施例中，所述在所述衬底上形成阳极层，所述阳极层中与所述显示区域对应的部分包括层叠设置的第一透光层和反射层，所述阳极层中与所述感光区域对应的部分包括第二透光层的步骤之前，包括：
在所述衬底上形成薄膜晶体管层，所述薄膜晶体管层包括多个薄膜晶体管，所述多个薄膜晶体管设于所述显示区域。
在一实施例中，所述在所述衬底上形成阳极层，所述阳极层中与所述显示区域对应的部分包括层叠设置的第一透光层和反射层，所述阳极层中与所述感光区域对应的部分包括第二透光层的步骤之后，包括：
在所述阳极层上形成阴极层，所述阴极层设于所述显示区域。
在一实施例中，所述在所述阳极层上形成阴极层，所述阴极层设于所述显示区域的步骤，包括：
采用第二掩模版在所述阳极层上沉积蒸镀材料，所述第二掩模版包括第二遮挡部和第二开口部，所述第二遮挡部与所述感光区域相对设置，在蒸镀时，用于阻挡蒸镀材料沉积在所述感光区域，所述第二开口部与所述显示区域相对设置，用于使所述蒸镀材料沉积在所述显示区域，以形成所述阴极层。
 有益效果
本申请提供了显示面板及其制作方法、掩模版组，所述显示面板包括显示区域和感光区域，阳极层中与所述显示区域对应的部分包括层叠设置的第一透光层和反射层，所述阳极层中与所述感光区域对应的部分包括第二透光层，感光器件设于衬底远离所述阳极层的一侧中所述感光区域对应的区域。该方案中将阳极层中与感光器件对应区域仅设置第二透光层，而省去反射层，使得显示面板中感光器件上方的膜层的透光率较高，提高了显示面板中感光器件的工作性能。
 附图说明
下面通过附图来对本发明进行进一步说明。需要说明的是，下面描述中的附图仅仅是用于解释说明本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的第一种显示面板的截面示意图。
图2为本申请实施例提供的第二种显示面板的截面示意图。
图3为本申请实施例提供的第三种显示面板的截面示意图。
图4为本申请实施例提供的第四种显示面板的截面示意图。
图5为本申请实施例提供的第五种显示面板的截面示意图。
图6为本申请实施例提供的一种掩模版组的应用场景示意图。
图7为本申请实施例提供的另一种掩模版组的应用场景示意图。
图8为本申请实施例提供的一种显示面板的制作方法的流程图。
图9为本申请实施例提供的另一种显示面板的制作方法的流程图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在本申请的描述中，需要理解的是，术语“上”、“下”、“远离”、“靠近”等指示的方位或位置关系为基于附图所示的方位或位置关系，例如，“上”只是表面在物体上方，具体指代正上方、斜上方、上表面都可以，只要居于物体水平之上即可；“靠近”是指代图中物体两侧中，与另一物体距离更近的一侧。以上方位或位置关系仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
另外，还需要说明的是，附图提供的仅仅是和本申请关系比较密切的结构，省略了一些与申请关系不大的细节，目的在于简化附图，使申请点一目了然，而不是表明实际中装置就是和附图一模一样，不作为实际中装置的限制。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在图中，结构相似的单元是以相同标号表示。在本文中提及“实施例”意味着，结合实施例描述的特定特征、结构或特性可以包含在本申请的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例，也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是，本文所描述的实施例可以与其它实施例相结合。
本申请提供显示面板，所述显示面板包括但不限于以下实施例。
在一实施例中，如图1所示，所述显示面板00包括显示区域01和感光区域02，所述显示面板00包括：衬底100；阳极层200，所述阳极层200设于所述衬底100的一侧，所述阳极层200中与所述显示区域01对应的部分包括层叠设置的第一透光层201和反射层202，所述阳极层200中与所述感光区域02对应的部分包括第二透光层203；感光器件300，所述感光器件300设于所述衬底100远离所述阳极层200的一侧，所述感光器件300设于所述感光区域02。
其中，所述显示区域01可以全部或者部分包围所述感光区域02而设置，例如所述感光区域02可以位于所述显示面板00的左上角、右上角或者前几行的中间位置。所述感光区域02的具体形状可以根据所述感光器件300的竖直投影形状设置，所述感光区域02的尺寸不小于所述感光器件300的尺寸，以保证所述感光器件300的正常工作。
其中，所述感光器件300可以作为单独的器件进行工作，也可以集成于摄像头或者指纹识别器件中进行工作。
可以理解的，由于所述阳极层200中与所述显示区域01对应的部分包括层叠设置的第一透光层201和反射层202，所述阳极层200中与所述感光区域02对应的部分包括第二透光层203，即所述阳极层200中与所述显示区域01对应的部分的厚度大于所述阳极层200中与所述感光区域02对应的部分的厚度，所述阳极层200中与所述感光区域02对应的部分的透光率大于与所述显示区域01对应的部分的透光率。
其中，如图1所示，所述第一透光层201和所述第二透光层203可以同层设置，且至少保证所述第二透光层203具有透光性，使得外界光线可以通过所述第二透光层203进入至所述感光器件300。进一步的，所述第一透光层201和所述第二透光层203的厚度可以相等，且两者的组成材料可以相同，例如所述第一透光层201和所述第二透光层203可以采用相同的材料同时形成于所述衬底100上，以提高制作效率，具体的，可以通过沉积法在所述衬底100或者在另外的膜层上整面形成透明导电膜作为所述第一透光层201和所述第二透光层203，所述透明导电膜可以为ITO（Indium Tin Oxide，氧化铟锡）薄膜或者掺铝氧化锌薄膜。
其中，所述反射层202的组成材料可以为导电的且反射能力较高的材料，以提高对外界光或者发光器件发出的光线的反射能力，提高显示面板的发光亮度，例如所述反射层202的组成材料可以为金属单质，具体的，可以采用银单质制作反射层202。
在一实施例中，如图2所示，当所述第一透光层201和所述第二透光层203同层设置时，所述阳极层200还包括：第三透光层204，所述第三透光层204设于所述第二透光层203和所述反射层202远离所述感光器件300的一侧。
其中，至少保证所述第三透光层204中与所述感光区域02对应的部分具有透光性，使得外界光线可以通过所述第二透光层203和所述第三透光层204进入至所述感光器件300。具体的，所述第三透光层204远离所述衬底100一侧的表面为一水平面，即所述第一透光层201、所述反射层202以及所述第三透光层204中位于所述显示区域01中的部分的厚度之和，可以等于所述第二透光层203以及所述第三透光层204中位于所述感光区域02中的部分的厚度之和，这样可以使得所述阳极层200平坦化，有利于在所述阳极层200上形成其它膜层。具体的，所述第三透光层204的组成材料和形成方式也可以和所述第一透光层201的组成材料和形成方式相同。
进一步的，所述第一透光层201和所述第二透光层203的厚度可以为50纳米，所述反射层202的厚度可以为10纳米，所述第三透光层204中位于所述反射层202上的部分厚度为50纳米。此时，所述阳极层200中位于所述显示区域01中的部分的平均透光率高达83.17%，可以理解的，由于所述感光区域02中未设置所述反射层202，所述感光区域02的透光率可以大于83.17%。
在一实施例中，如图3所示，所述衬底100包括：第一衬底101，所述第一衬底101设于所述感光区域02；第二衬底102，所述第二衬底102设于所述显示区域01，所述第一衬底101的厚度小于所述第二衬底102的厚度。
其中，所述第一衬底101可以为厚度均一的膜层或者所述第一衬底101靠近所述感光器件300一侧的表面可以为曲面，所述第一衬底101的总体厚度可以根据所述感光器件300的高度设置，所述第一衬底101靠近所述感光器件300一侧的表面形状可以根据所述感光器件300的形状设置。
在一实施例中，如图4所示，所述显示面板00还包括：薄膜晶体管层400，所述薄膜晶体管层400设于所述阳极层200靠近所述衬底100的一侧，所述薄膜晶体管层400包括多个薄膜晶体管401，所述多个薄膜晶体管401设于所述显示区域01。
具体的，所述多个薄膜晶体管401和所述阳极层200中对应的区域电性连接，以控制所述阳极层200中对应的区域的发光情况。可以理解的，所述薄膜晶体管401包括透光率极低的器件，且同一行或者同一列的多个所述薄膜晶体管401与同一栅极线或者同一数据线连接以传输信号。此处，不在所述感光区域02中设置所述薄膜晶体管401，即所述薄膜晶体管层400中与所述感光区域02对应的区域不包含透光率极低的所述薄膜晶体管401、以及不包括所述栅极线和所述数据线，即本方案通过避免在所述薄膜晶体管层400中与所述感光区域02对应的区域设置所述薄膜晶体管401，进一步可以减少所述感光区域02中所述栅极线和所述数据线等金属走线的数量，以提高所述所述感光区域02的透光率。
在一实施例中，如图5所示，所述显示面板00还包括：阴极层500，所述阴极层500设于所述阳极层200远离所述衬底100的一侧，所述阴极层500设于所述显示区域01。
可以理解的，由于所述多个薄膜晶体管401、所述反射层202仅设置在所述显示区域01中，可以仅将所述阴极层500设置在所述显示区域01中，保证所述显示区域01中的画面可以正常显示，以及进一步提高所述显示面板00中位于所述感光器件300上方的膜层的透光率。
其中，所述阴极层500的组成材料可以为镁银合金或者锂铝合金，具体的，可以将性质活泼的低功函数金属和化学性能较稳定的高功函数金属一起蒸发形成所述阴极层500，以提高器件量子效率和稳定性。或者，所述阴极层500可以为由金属单质组成的金属单层、和位于所述金属单层和对应的发光器件之间的如氟化锂、氟化铯、氟化铷等组成的阻挡层共同构成的双电极，可得到更高的发光效率和更好的电流-电压特性曲线。或者，所述阴极层500可以包括所述金属单层、和位于所述金属单层和对应的发光器件之间的掺杂有低功函数金属的有机层，可大大改善发光器件性能。
本申请还提供掩模版组，所述掩模版组用于制作如上任一所述的显示面板，所述掩模版组包括但不限于以下实施例。
在一实施例中，如图6所示，所述掩模版组包括第一掩模版600，所述第一掩模版600用于处理与所述显示区域01和所述感光区域02对应的光阻层700，所述第一掩模版600包括：第一开口部601，所述第一开口部601与所述感光区域02相对设置，用于曝光所述光阻层700中位于所述感光区域02中的部分701；第一遮挡部602，所述第一遮挡部602与所述显示区域01相对设置，所述光阻层700位于反射膜800上方，所述第一遮挡部602用于遮挡所述光阻层700中位于所述显示区域01中的部分702，进而保留所述光阻层700中位于所述显示区域01中的部分702，进而保留所述反射膜800中位于所述显示区域01中的部分以形成反射层802。
其中，所述第一开口部601的尺寸和形状可以根据上文中所述感光器件300的具体结构进行设置，所述第一开口部601用于使得曝光的光线照射到所述光阻层700中位于所述感光区域02中的部分701，在后期显影后去除该部分701，在后期刻蚀时去除所述反射膜800中位于所述感光区域02中的部分801；所述第一遮挡部602为所述第一掩模版600中除去所述第一开口部601的部分，所述第一遮挡部602用于阻止曝光的光线照射到所述光阻层700中位于所述显示区域01中的部分702，避免在后期显影后去除该部分702，在后期刻蚀时通过该部分702保护所述反射膜800中位于所述显示区域01中的部分，使得该部分作为所述反射层802保留下来；因此，提高了所述感光器件300上方膜层的透光率。
需要注意的是，所述第一掩模版600用于对所述光阻层700的部分区域进行曝光，故所述第一掩模版600的本质可以为光学掩模板或者称为光罩，所述第一掩模版600为在薄膜、塑料或玻璃基体材料上制作各种功能图形并精确定位，以便用于光致抗蚀剂涂层选择性曝光的一种结构。
在一实施例中，如图7所示，所述掩模版组还包括第二掩模版900，所述第二掩模版900包括：第二遮挡部901，所述第二遮挡部901与所述感光区域02相对设置，在蒸镀时，用于阻挡蒸镀材料沉积在所述感光区域02；第二开口部902，所述第二开口部902与所述显示区域01相对设置，用于使所述蒸镀材料沉积在所述显示区域01，以形成阴极层1000。
可以理解的，由于所述显示面板00的尺寸是有限的，考虑到可操作性和节约蒸镀材料等方面，所述第二掩模版900还可以包括外围遮挡部903，所述外围遮挡部903围绕所述第二开口部902而设置，所述外围遮挡部903和所述第二遮挡部901共同限定蒸镀的区域为所述显示区域01。
其中，所述第二遮挡部901的尺寸和形状可以根据上文中所述感光器件300的具体结构进行设置，在蒸镀时，所述蒸镀材料通过所述第二开口部902沉积在所述显示区域01，以形成所述阴极层1000，由于所述第二遮挡部901阻挡所述蒸镀材料在所述感光区域02沉积，所述阴极层1000具有一与所述感光区域02对应的开口1001，提高了所述感光器件300上方膜层的透光率。
需要注意的是，所述第二掩模版900用于在特定区域沉积蒸镀材料形成所述阴极层1000，故所述第二掩模版900的本质可以为精细金属掩模版，所述第二掩模版900的主材可以是金属、或金属和树脂的混合物，主要用于在OLED生产过程中沉积发光材料形成发光器件，以及沉积金属或者金属合金材料形成所述阴极层1000。
本申请还提供显示面板的制作方法，所述方法用于制作如上任一所述的显示面板。
在一实施例中，如图8所示，所述方法包括如下步骤。
S10，提供衬底。
其中，根据所述显示面板的类型可以设置不同的所述衬底。例如，当所述显示面板为柔性OLED显示面板时，所述衬底可以为塑料基底等柔性衬底，具体的，可以采具有较好的耐热性和稳定性的聚酰亚胺制作所述衬底，进一步的，可以采用聚合物和纳米无机的叠层结构作为所述衬底，以极大改善单纯使用聚合物材料制作所述衬底的水汽传输特性，并且能够保持所述衬底的柔性可弯曲特性。又例如，当所述显示面板为刚性OLED显示面板时，所述衬底可以为玻璃基底等刚性衬底。
S20，在所述衬底上形成阳极层，所述阳极层中与所述显示区域对应的部分包括层叠设置的第一透光层和反射层，所述阳极层中与所述感光区域对应的部分包括第二透光层。
其中，所述第一透光层和所述第二透光层可以同层设置，且至少保证所述第二透光层具有透光性，使得外界光线可以通过所述第二透光层进入至所述感光器件。进一步的，所述第一透光层和所述第二透光层的厚度可以相等，且两者的组成材料可以相同，例如所述第一透光层和所述第二透光层可以采用相同的材料同时形成于所述衬底上，以提高制作效率。
可以理解的，由于所述阳极层中与所述显示区域对应的部分包括层叠设置的第一透光层和反射层，所述阳极层中与所述感光区域对应的部分包括第二透光层，即所述阳极层中与所述显示区域对应的部分的厚度大于所述阳极层中与所述感光区域对应的部分的厚度，所述阳极层中与所述感光区域对应的部分的透光率大于与所述显示区域对应的部分的透光率。
在一实施例中，如图9所示，所述步骤S20可以包括如下步骤。
S201，在所述衬底上形成所述第一透光层和所述第二透光层，以及在所述第一透光层和所述第二透光层上依次形成反射膜、光阻层，其中所述第一透光层设于所述显示区域，所述第二透光层设于所述感光区域，所述反射膜和所述光阻层设于所述显示区域和所述感光区域。
其中，所述第一透光层和所述第二透光层通过采用相同的材料同时形成于所述衬底上，并且完全覆盖所述显示区域和所述感光区域具体的，可以通过沉积法在所述衬底或者在另外的膜层上整面形成透明导电膜作为所述第一透光层和所述第二透光层，所述透明导电膜可以为ITO（Indium Tin Oxide，氧化铟锡）薄膜或者掺铝氧化锌薄膜。
其中，所述反射膜的组成材料可以为导电的且反射能力较高的材料，以提高对外界光或者发光器件发出的光线的反射能力，提高显示面板的发光亮度，例如所述反射膜的组成材料可以为金属单质，所述金属单质可以为银单质，可以采用沉积法在所述第一透光层和所述第二透光层上形成所述反射膜。
其中，所述光阻层的组成材料可以为正型光阻剂或者负型光阻剂，所述正型光阻剂本身难溶于显影液，曝光后解离成小分子，形成容易溶于显影液的结构；所述负型光阻剂曝光后形成不容易溶于显影液的结构。具体的，可以采用涂布的方式在所述反射膜上形成所述光阻层，确保完全覆盖所述反射膜。
S202，采用第一掩模版对所述光阻层进行曝光，所述第一掩模版包括第一开口部和第一遮挡部，所述第一开口部与所述感光区域相对设置，用于曝光所述光阻层中位于所述感光区域中的部分，所述第一遮挡部与所述显示区域相对设置，用于遮挡所述光阻层中位于所述显示区域中的部分。
其中，所述第一掩模版针对所述光阻层的组成材料为正型光阻剂的情况。具体的，所述第一开口部的尺寸和形状可以根据上文中所述感光器件的具体结构进行设置，所述第一开口部用于使得曝光的光线照射到所述光阻层中位于所述感光区域中的部分；所述第一遮挡部为所述第一掩模版中除去所述第一开口部的部分，所述第一遮挡部用于阻止曝光的光线照射到所述光阻层中位于所述显示区域中的部分。
可以理解的，由于所述光阻层曝光后解离成小分子，形成容易溶于显影液的结构，即所述光阻层中位于所述感光区域中的部分被曝光后，形成了容易溶于显影液的结构。
S203，去除所述光阻层中位于所述感光区域中的部分，并保留所述光阻层中位于所述显示区域中的部分，以形成光阻图案。
其中，可以采用显影液处理经过曝光后的所述光阻层，所述显影液可以根据所述光阻层的具体材料进行选择。可以理解的，由于仅所述光阻层中位于所述感光区域中的部分经过曝光，因此，仅所述光阻层中位于所述感光区域中的部分会溶解于所述显影液而被去除，即所述光阻层中仅位于所述显示区域中的部分在经过显影后仍保留于所述反射膜上，构成所述光阻图案。
S204，去除所述反射膜中未被所述光阻图案覆盖的部分，并保留所述反射膜中被所述光阻图案覆盖的部分，以形成所述反射层。
其中，可以采用刻蚀液处理所述反射膜，所述刻蚀液用于溶解所述反射膜，例如当所述反射膜的组成材料为银单质时，可以采用磷酸、硝酸、醋酸的混酸作为所述刻蚀液。可以理解的，由于所述反射膜中位于所述感光区域的部分未被所述光阻图案，直接裸露在空气中，因此在刻蚀后会被去除，从而所述反射膜中仅保留了位于所述显示区域的部分，构成所述反射层。可以理解的，去除所述反射膜中未被所述光阻图案覆盖的部分后，还需要通过光阻剥离液浸泡所述光阻图案，以去除所述光阻图案，使得所述反射层裸露出来。
进一步的，形成所述反射层后，还可以在所述反射层和所述第二透光层上形成第三透光层。具体的，所述第三透光层的组成材料和形成方式也可以和所述第一透光层的组成材料和形成方式相同。
在一实施例中，在所述步骤S20之前可以包括如下步骤。
S50，在所述衬底上形成薄膜晶体管层，所述薄膜晶体管层包括多个薄膜晶体管，所述多个薄膜晶体管设于所述显示区域。
具体的，所述多个薄膜晶体管和所述阳极层中对应的区域电性连接，以控制所述阳极层中对应的区域的发光情况。可以理解的，所述薄膜晶体管包括透光率极低的器件，且同一行或者同一列的多个所述薄膜晶体管与同一栅极线或者同一数据线连接以传输信号。此处，不在所述感光区域中设置所述薄膜晶体管，即所述薄膜晶体管层中与所述感光区域对应的区域不包含透光率极低的所述薄膜晶体管、以及不包括所述栅极线和所述数据线，即本方案通过避免在所述薄膜晶体管层中与所述感光区域对应的区域设置所述薄膜晶体管，进一步可以减少所述感光区域中所述栅极线和所述数据线等金属走线的数量，以提高所述所述感光区域的透光率。
在一实施例中，在所述步骤S20之后可以包括如下步骤。
S60，在所述阳极层上形成阴极层，所述阴极层设于所述显示区域。
其中，所述阴极层的组成材料可以为镁银合金或者锂铝合金，具体的，可以将性质活泼的低功函数金属和化学性能较稳定的高功函数金属一起蒸发形成所述阴极层，以提高器件量子效率和稳定性。或者，所述阴极层可以为由金属单质组成的金属单层、和位于所述金属单层和对应的发光器件之间的如氟化锂、氟化铯、氟化铷等组成的阻挡层共同构成的双电极，可得到更高的发光效率和更好的电流-电压特性曲线。或者，所述阴极层可以包括所述金属单层、和位于所述金属单层和对应的发光器件之间的掺杂有低功函数金属的有机层，可大大改善发光器件性能。
具体的，可以采用第二掩模版在所述阳极层上沉积蒸镀材料，所述第二掩模版包括第二遮挡部和第二开口部，所述第二遮挡部与所述感光区域相对设置，在蒸镀时，用于阻挡蒸镀材料沉积在所述感光区域，所述第二开口部与所述显示区域相对设置，用于使所述蒸镀材料沉积在所述显示区域，以形成所述阴极层。
需要注意的是，所述第二掩模版用于在特定区域沉积蒸镀材料形成所述阴极层，故所述第二掩模版的本质可以为精细金属掩模版，所述第二掩模版的主材可以是金属、或金属和树脂的混合物，主要用于在OLED生产过程中沉积发光材料形成发光器件，以及沉积金属或者金属合金材料形成所述阴极层。
S30，在所述衬底远离所述阳极层的一侧设置感光器件，所述感光器件与所述感光区域对应。
其中，所述感光器件可以作为单独的器件进行工作，也可以集成于摄像头或者指纹识别器件中进行工作。
可以理解的，由于所述阳极层中的所述反射层仅设置在所述显示区域中，即所述感光区域中不包含反射率较高的所述反射层，且所述感光器件与所述感光区域对应设置，增加了进入到所述感光器件中的光量，提高了所述感光器件的工作性能。
在一实施例中，在所述步骤S30之前可以包括如下步骤。
S40，对所述衬底进行处理，以形成第一衬底和第二衬底，所述第一衬底的厚度小于所述第二衬底的厚度，所述第一衬底与所述感光区域对应，所述第二衬底与所述显示区域对应。
具体的，当所述衬底为柔性衬底时，可以先将所述柔性衬底形成于一刚性基底上，以维持所述柔性衬底的稳定；在所述柔性衬底上制备完所有相关的膜层结构以后，再去除所述刚性基底；然后在进行所述步骤S40，可以避免前期因所述衬底厚度不一致导致其上方膜层不均一。
其中，所述第一衬底可以为厚度均一的膜层或者所述第一衬底靠近所述感光器件一侧的表面可以为曲面，所述第一衬底的总体厚度可以根据所述感光器件的高度设置，所述第一衬底靠近所述感光器件一侧的表面形状可以根据所述感光器件的形状设置。进一步的，由于所述第二衬底不与所述感光器件相对设置，所述第二衬底的厚度可以等于进行所述步骤S40之前的所述衬底的厚度，即可以仅对所述衬底中与所述感光器件对应的区域进行处理形成所述第一衬底。
具体的，可以参考所述反射层的形成方式对所述衬底中靠近所述感光器件的一侧中与所述感光器件对应的目标区域进行刻蚀，以形成所述第一衬底，具体的，可以采用氢氧化钾和碳酸钾的混合溶液、水合肼或者六氟异丙醇等刻蚀液进行刻蚀。或者，可以采用物理打磨的方式对所述衬底中的所述目标区域进行打磨，以形成所述第一衬底。又或者，可以采用离子辐射方法对所述衬底中的所述目标区域进行辐射，以形成所述第一衬底，具体的，可以在有氧参与的重离子的作用下，对所述目标区域进行离子辐照，当离子辐照的强度达到一定范围时，所述目标区域中的部分材料会发生一定的氧化裂解，酰亚胺环和苯环都会受到破坏，产生一些过氧化物和羧酸等，所述目标区域中的部分材料会变脆，强度变差，最终被破坏，以实现变薄的目标。
本申请提供了显示面板及其制作方法、掩模版组，所述显示面板包括显示区域和感光区域，阳极层中与所述显示区域对应的部分包括层叠设置的第一透光层和反射层，所述阳极层中与所述感光区域对应的部分包括第二透光层，感光器件设于衬底远离所述阳极层的一侧中所述感光区域对应的区域。该方案中将阳极层中与感光器件对应区域仅设置第二透光层，而省去反射层，使得显示面板中感光器件上方的膜层的透光率较高，提高了显示面板中感光器件的工作性能。
以上对本申请实施例所提供的显示面板和掩模版组的结构以及显示面板的制作方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (14)

  1. 一种显示面板，其中，所述显示面板包括显示区域和感光区域，所述显示面板包括：
    衬底；
    阳极层，所述阳极层设于所述衬底的一侧，所述阳极层中与所述显示区域对应的部分包括层叠设置的第一透光层和反射层，所述阳极层中与所述感光区域对应的部分包括第二透光层；
    感光器件，所述感光器件设于所述衬底远离所述阳极层的一侧，所述感光器件设于所述感光区域。
  2. 如权利要求1所述的显示面板，其中，所述衬底包括：
    第一衬底，所述第一衬底设于所述感光区域；
    第二衬底，所述第二衬底设于所述显示区域，所述第一衬底的厚度小于所述第二衬底的厚度。
  3. 如权利要求1所述的显示面板，其中，所述显示面板还包括：
    薄膜晶体管层，所述薄膜晶体管层设于所述阳极层靠近所述衬底的一侧，所述薄膜晶体管层包括多个薄膜晶体管，所述多个薄膜晶体管设于所述显示区域。
  4. 如权利要求1所述的显示面板，其中，所述显示面板还包括：
    阴极层，所述阴极层设于所述阳极层远离所述衬底的一侧，所述阴极层设于所述显示区域。
  5. 如权利要求1所述的显示面板，其中，当所述第一透光层和所述第二透光层同层设置时，所述阳极层还包括：
    第三透光层，所述第三透光层设于所述第二透光层和所述反射层远离所述感光器件的一侧。
  6. 一种掩模版组，其中，所述掩模版组用于制作如权利要求1所述的显示面板，所述显示面板包括显示区域和感光区域，所述掩模版组包括第一掩模版，用于处理与所述显示区域和所述感光区域对应的光阻层，所述第一掩模版包括：
    第一开口部，所述第一开口部与所述感光区域相对设置，用于曝光所述光阻层中位于所述感光区域中的部分；
    第一遮挡部，所述第一遮挡部与所述显示区域相对设置，所述光阻层位于反射膜上方，所述第一遮挡部用于遮挡所述光阻层中位于所述显示区域中的部分，进而保留所述光阻层中位于所述显示区域中的部分，进而保留所述反射膜中位于所述显示区域中的部分以形成反射层。
  7. 如权利要求6所述的掩模版组，其中，所述掩模版组还包括第二掩模版，所述第二掩模版包括：
    第二遮挡部，所述第二遮挡部与所述感光区域相对设置，在蒸镀时，用于阻挡蒸镀材料沉积在所述感光区域；
    第二开口部，所述第二开口部与所述显示区域相对设置，用于使所述蒸镀材料沉积在所述显示区域，以形成阴极层。
  8. 一种显示面板的制作方法，其中，所述方法用于制作如权利要求1所述的显示面板，所述显示面板包括显示区域和感光区域，所述方法包括：
    提供衬底；
    在所述衬底上形成阳极层，所述阳极层中与所述显示区域对应的部分包括层叠设置的第一透光层和反射层，所述阳极层中与所述感光区域对应的部分包括第二透光层；
    在所述衬底远离所述阳极层的一侧设置感光器件，所述感光器件与所述感光区域对应。
  9. 如权利要求8所述的方法，其中，所述在所述衬底上形成阳极层，所述阳极层中与所述显示区域对应的部分包括层叠设置的第一透光层和反射层，所述阳极层中与所述感光区域对应的部分包括第二透光层的步骤，包括：
    在所述衬底上形成所述第一透光层和所述第二透光层，以及在所述第一透光层和所述第二透光层上依次形成反射膜、光阻层，其中所述第一透光层设于所述显示区域，所述第二透光层设于所述感光区域，所述反射膜和所述光阻层设于所述显示区域和所述感光区域；
    采用第一掩模版对所述光阻层进行曝光，所述第一掩模版包括第一开口部和第一遮挡部，所述第一开口部与所述感光区域相对设置，用于曝光所述光阻层中位于所述感光区域中的部分，所述第一遮挡部与所述显示区域相对设置，用于遮挡所述光阻层中位于所述显示区域中的部分；
    去除所述光阻层中位于所述感光区域中的部分，并保留所述光阻层中位于所述显示区域中的部分，以形成光阻图案；
    去除所述反射膜中未被所述光阻图案覆盖的部分，并保留所述反射膜中被所述光阻图案覆盖的部分，以形成所述反射层。
  10. 如权利要求9所述的方法，其中，所述去除所述反射膜中未被所述光阻图案覆盖的部分，并保留所述反射膜中被所述光阻图案覆盖的部分，以形成所述反射层的步骤之后，还包括：
    在所述反射层和所述第二透光层上形成第三透光层。
  11. 如权利要求8所述的方法，其中，所述在所述衬底远离所述阳极层的一侧设置感光器件的步骤之前，包括：
    对所述衬底进行处理，以形成第一衬底和第二衬底，所述第一衬底的厚度小于所述第二衬底的厚度，所述第一衬底与所述感光区域对应，所述第二衬底与所述显示区域对应。
  12. 如权利要求8所述的方法，其中，所述在所述衬底上形成阳极层，所述阳极层中与所述显示区域对应的部分包括层叠设置的第一透光层和反射层，所述阳极层中与所述感光区域对应的部分包括第二透光层的步骤之前，包括：
    在所述衬底上形成薄膜晶体管层，所述薄膜晶体管层包括多个薄膜晶体管，所述多个薄膜晶体管设于所述显示区域。
  13. 如权利要求8所述的方法，其中，所述在所述衬底上形成阳极层，所述阳极层中与所述显示区域对应的部分包括层叠设置的第一透光层和反射层，所述阳极层中与所述感光区域对应的部分包括第二透光层的步骤之后，包括：
    在所述阳极层上形成阴极层，所述阴极层设于所述显示区域。
  14. 如权利要求13所述的方法，其中，所述在所述阳极层上形成阴极层，所述阴极层设于所述显示区域的步骤，包括：
    采用第二掩模版在所述阳极层上沉积蒸镀材料，所述第二掩模版包括第二遮挡部和第二开口部，所述第二遮挡部与所述感光区域相对设置，在蒸镀时，用于阻挡蒸镀材料沉积在所述感光区域，所述第二开口部与所述显示区域相对设置，用于使所述蒸镀材料沉积在所述显示区域，以形成所述阴极层。
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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112599694B (zh) * 2020-12-10 2022-11-25 深圳市华星光电半导体显示技术有限公司 显示面板和显示装置
CN112767841B (zh) * 2021-02-05 2022-09-13 昆山国显光电有限公司 显示面板及显示装置
CN113985663B (zh) * 2021-11-15 2023-11-28 武汉华星光电技术有限公司 显示面板、显示装置以及车载监控装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015118761A (ja) * 2013-12-17 2015-06-25 株式会社ジャパンディスプレイ 有機ｅｌ表示装置及びその製造方法
CN108666437A (zh) * 2017-04-01 2018-10-16 上海和辉光电有限公司 显示面板及其制作方法
CN110085766A (zh) * 2019-04-28 2019-08-02 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法、显示装置
CN110534550A (zh) * 2019-08-22 2019-12-03 武汉华星光电技术有限公司 显示面板及其制备方法和终端
CN110767846A (zh) * 2019-10-31 2020-02-07 京东方科技集团股份有限公司 显示面板及其制备方法、显示装置
CN210073852U (zh) * 2019-05-15 2020-02-14 昆山国显光电有限公司 显示面板和显示装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI282584B (en) * 2005-12-23 2007-06-11 Innolux Display Corp Method for fabricating trans-reflective liquid crystal displays
CN104157550B (zh) * 2014-07-28 2016-08-31 京东方科技集团股份有限公司 薄膜图形化方法及掩膜板
CN106298819B (zh) * 2015-06-04 2020-10-27 联华电子股份有限公司 背照式影像感测器及其制作方法
CN106058079B (zh) * 2016-08-18 2019-06-04 Tcl集团股份有限公司 一种像素bank及其制作方法、发光二极管
CN107910340A (zh) * 2017-11-01 2018-04-13 德淮半导体有限公司 一种图像传感器及其制备方法
CN107946341B (zh) * 2017-11-10 2020-05-22 上海天马微电子有限公司 显示装置和显示装置的制造方法
CN108459431A (zh) * 2018-05-23 2018-08-28 Oppo广东移动通信有限公司 显示屏及具有其的电子装置
CN109306450B (zh) * 2018-11-28 2020-04-28 武汉华星光电半导体显示技术有限公司 蒸镀用掩模板组
CN109371361A (zh) * 2018-12-15 2019-02-22 武汉华星光电半导体显示技术有限公司 掩膜板组件和显示面板及其制作方法
CN109920822A (zh) * 2019-02-28 2019-06-21 武汉华星光电半导体显示技术有限公司 显示面板
CN110047380B (zh) * 2019-03-26 2020-06-30 武汉华星光电半导体显示技术有限公司 一种显示面板及显示装置
CN209590474U (zh) * 2019-03-27 2019-11-05 深圳市隆利科技股份有限公司 一种高屏占比的液晶显示装置及终端设备
CN110047878B (zh) * 2019-03-27 2021-07-23 武汉华星光电半导体显示技术有限公司 一种显示面板及其制备方法
CN109957754B (zh) * 2019-04-09 2021-04-23 京东方科技集团股份有限公司 掩膜板组件、oled显示面板及其制作方法、显示装置
CN110211972B (zh) * 2019-05-23 2021-02-02 武汉华星光电半导体显示技术有限公司 一种阵列基板及显示装置
CN110265461A (zh) * 2019-06-27 2019-09-20 武汉天马微电子有限公司 有机发光显示面板及其制作方法、显示装置、掩膜版
CN110416272B (zh) * 2019-07-31 2021-11-02 上海天马有机发光显示技术有限公司 显示面板及显示装置
CN110491912A (zh) * 2019-07-31 2019-11-22 武汉华星光电半导体显示技术有限公司 一种显示面板及其制备方法、显示装置
CN110473988B (zh) * 2019-08-02 2020-11-10 武汉华星光电半导体显示技术有限公司 一种显示面板制程用掩模版及其应用
CN114361230A (zh) * 2019-09-30 2022-04-15 武汉天马微电子有限公司 一种显示面板、制备方法及显示装置
CN110828515A (zh) * 2019-10-25 2020-02-21 武汉华星光电技术有限公司 显示器件及其制备方法
CN110729335B (zh) * 2019-10-28 2022-02-01 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法
CN110923625A (zh) * 2019-12-16 2020-03-27 京东方科技集团股份有限公司 掩膜模组、蒸镀系统及蒸镀方法及显示基板
CN113517326A (zh) * 2021-05-25 2021-10-19 京东方科技集团股份有限公司 显示装置、显示面板及其制作方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015118761A (ja) * 2013-12-17 2015-06-25 株式会社ジャパンディスプレイ 有機ｅｌ表示装置及びその製造方法
CN108666437A (zh) * 2017-04-01 2018-10-16 上海和辉光电有限公司 显示面板及其制作方法
CN110085766A (zh) * 2019-04-28 2019-08-02 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法、显示装置
CN210073852U (zh) * 2019-05-15 2020-02-14 昆山国显光电有限公司 显示面板和显示装置
CN110534550A (zh) * 2019-08-22 2019-12-03 武汉华星光电技术有限公司 显示面板及其制备方法和终端
CN110767846A (zh) * 2019-10-31 2020-02-07 京东方科技集团股份有限公司 显示面板及其制备方法、显示装置

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