WO2021227205A1 - Oled的面板及其制造方法 - Google Patents

Oled的面板及其制造方法 Download PDF

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Publication number
WO2021227205A1
WO2021227205A1 PCT/CN2020/097462 CN2020097462W WO2021227205A1 WO 2021227205 A1 WO2021227205 A1 WO 2021227205A1 CN 2020097462 W CN2020097462 W CN 2020097462W WO 2021227205 A1 WO2021227205 A1 WO 2021227205A1
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layer
cathode
inorganic salt
light
value
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PCT/CN2020/097462
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English (en)
French (fr)
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王振民
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武汉华星光电半导体显示技术有限公司
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Priority to US16/963,309 priority Critical patent/US11751428B2/en
Publication of WO2021227205A1 publication Critical patent/WO2021227205A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to the field of display technology, in particular to an OLED panel and a manufacturing method thereof.
  • Flat-panel display devices have many advantages such as thin body, power saving, and no radiation, etc., and have been widely used, including organic light-emitting display devices (OLED, Organic Light Emitting Display).
  • OLED Organic Light Emitting Display
  • OLED has the characteristics of self-luminescence, high brightness, wide viewing angle, high contrast, flexibility, and low energy consumption. Therefore, it has received widespread attention and has gradually replaced traditional liquid crystal display devices. It has been widely used in mobile phone screens, computer monitors, and full-color TV etc.
  • the 0LED display technology does not require a backlight, and uses very thin organic material coatings and glass substrates. When current passes through, these organic materials will emit light.
  • under-screen camera With the development of technology, major panel manufacturers are trying to use under-screen camera technology to increase the screen's high screen-to-body ratio.
  • the so-called under-screen camera is to "buried" the front camera under the screen of the mobile phone. Therefore, there is no need to specifically reserve a position for the camera on the screen to increase the screen-to-body ratio.
  • under-screen cameras need to solve the problem of light transmittance.
  • the purpose of the present invention is to provide an OLED panel and a manufacturing method thereof, which can increase the transmittance of light by reducing the thickness of the cathode above the camera, thereby ensuring the quality of photographing.
  • the present invention provides an OLED panel to be arranged above at least one camera.
  • the OLED panel includes in order from top to bottom: a substrate; a light-emitting layer disposed on the substrate On; a cathode, which is arranged on the light-emitting layer; a high-N-value inorganic salt layer, which is arranged on the surface of the cathode and the light-emitting layer; a CPL layer, which is arranged on the high-N-value inorganic salt layer;
  • the entire thickness of the high N-value inorganic salt layer and the partial thickness of the cathode of the panel at the position above the camera are removed to form a hollow portion, and the number of the hollow portions corresponds to The number of said cameras.
  • a TFE structure is further included, formed on the surface of the CPL layer and the high-N inorganic salt layer.
  • the material of the CPL layer is selected from a high-N inorganic material.
  • the material of the high N-value inorganic salt layer is selected from silica.
  • the present invention also provides an OLED panel for installation above a camera.
  • the OLED panel includes in order from top to bottom: a substrate; a light-emitting layer provided on the substrate; and a cathode provided on the substrate.
  • a high-N-value inorganic salt layer is provided on the surface of the cathode and the light-emitting layer; and a CPL layer is provided on the high-N-value inorganic salt layer; wherein, in the corresponding camera The entire thickness of the high-N inorganic salt layer and part of the thickness of the cathode of the panel at the upper position are removed to form a hollow portion.
  • a TFE structure is further included, formed on the surface of the CPL layer and the high-N inorganic salt layer.
  • the material of the CPL layer is selected from a high-N inorganic material.
  • the material of the high N-value inorganic salt layer is selected from silica.
  • the present invention also provides a method for manufacturing an OLED panel.
  • the OLED panel is provided above a camera, and the manufacturing method includes the following steps:
  • a CPL layer is formed on the high N value inorganic salt layer.
  • the material of the CPL layer is selected from a high-N inorganic material.
  • the material of the high N-value inorganic salt layer is selected from silica.
  • dry etching is used to remove the part of the exposed cathode.
  • the high-N inorganic salt layer is formed by chemical vapor deposition.
  • the step of forming the CPL layer on the cathode after the step of forming the CPL layer on the cathode, it further includes forming a TFE structure on the surface of the CPL layer and the high-N inorganic salt layer.
  • the panel through the OLED sequentially includes from top to bottom: a substrate; a light-emitting layer disposed on the substrate; a cathode disposed on the light-emitting layer; a high N value An inorganic salt layer, arranged on the surface of the cathode and the light-emitting layer; and a CPL layer, arranged on the high N-value inorganic salt layer, wherein the surface of the panel corresponding to the position above the camera The entire thickness of the high-N inorganic salt layer and a part of the thickness of the cathode are removed to form a hollow portion, and the thickness of the cathode above the camera is reduced to increase the light transmittance, thereby improving the quality of photographing.
  • FIG. 1 is a schematic diagram of an OLED panel according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of the first step of the manufacturing method of the OLED panel of the present invention.
  • FIG. 3 is a schematic diagram of the second step of the manufacturing method of the OLED panel of the present invention.
  • FIG. 4 is a schematic diagram of the third step of the manufacturing method of the OLED panel of the present invention.
  • FIG. 5 is a schematic diagram of the fourth step of the manufacturing method of the OLED panel of the present invention.
  • FIG. 6 is a schematic diagram of the fifth step of the manufacturing method of the OLED panel of the present invention.
  • FIG. 7 is a schematic diagram of the sixth step of the manufacturing method of the OLED panel of the present invention.
  • an OLED panel 100 according to an embodiment of the present invention is provided above a camera C.
  • the OLED panel 100 includes in order from top to bottom: a substrate 1; a light-emitting layer 2. Is arranged on the substrate 1; a cathode 3 is arranged on the light-emitting layer 2; a high-N-value inorganic salt layer 4 is arranged on the surface of the cathode 3 and the light-emitting layer 2; a CPL layer 5, That is, the light extraction layer is arranged on the high-N-value inorganic salt layer 4; and a TFE structure 6 is formed on the surface of the CPL layer 5 and the high-N-value inorganic salt layer 4; The entire thickness of the high N-value inorganic salt layer 4 of the panel 100 at a position above the camera C and a part of the thickness of the cathode 3 are removed to form a hollow portion H.
  • the present invention is not limited to this.
  • the number of the hollow parts H can be increased or decreased corresponding to the number of cameras, thereby improving the quality of the photographed picture and increasing the range of the camera.
  • the material of the high-N inorganic salt layer 4 is selected from silicon dioxide, which has the characteristics of greater hardness and wear resistance, and is used to protect the light-emitting layer 2 and the cathode 3.
  • the material of the CPL layer 5 is selected from a material with a high N value, that is, a material with a high refractive index (2.0-2.5), which can improve light emission.
  • the material of the CPL layer 5 is selected from high-N inorganic materials.
  • FIGS. 2 to 7 are schematic structural diagrams of the various steps of the manufacturing method of the OLED panel 100 of the present invention.
  • the OLED panel 100 is provided above a camera C (as shown in FIG. 1).
  • the manufacturing method of the OLED panel includes the following steps:
  • a substrate 1 is provided, and a light-emitting layer 2 and a cathode 3 are sequentially formed on the substrate 1 from bottom to top (FIG. 2 ).
  • a high-N inorganic salt layer 4 is formed on the surface of the light-emitting layer 2 and the cathode 3 to protect the light-emitting layer 2 and the cathode 3 by virtue of its high hardness and wear resistance.
  • the high N-value inorganic salt layer 4 is formed on the upper surface and side surfaces of the light-emitting layer 2 and the cathode 3.
  • the high-N-value inorganic salt layer 4 above the cathode 3 is removed to expose a portion of the cathode 3 (FIG. 3).
  • the material of the high N-value inorganic salt layer 4 is selected from silica.
  • part of the exposed cathode 3 (FIGS. 4 and 5) is removed to make the cathode 3 thinner.
  • part of the cathode 3 is removed by dry engraving.
  • a CPL layer 5 is formed by chemical vapor deposition, that is, a light extraction layer is on the high-N-value inorganic salt layer 4 (FIG. 6) to improve light emission, and the high-N-value inorganic salt layer 4 and the The region of the cathode 3 is formed with a hollow portion H.
  • the material of the CPL layer 5 is selected from a material with a high N value, that is, a material with a high refractive index (2.0 to 2.5), which can improve the light extraction efficiency.
  • the material of the CPL layer 5 is selected from high-N inorganic materials.
  • a thin film encapsulation (TFE) structure 6 is formed on the surface of the CPL layer 5 and the high N-value inorganic salt layer 4 (FIG. 7) to protect the overall structure.
  • the TFE structure is formed by a stacking structure of two or more multilayer films, including an inorganic film layer and a planarization layer, which can be formed by evaporation, screen printing, inkjet printing, etc.
  • the OLED panel of the present invention sequentially includes from top to bottom: a substrate; a light-emitting layer disposed on the substrate; a cathode disposed on the light-emitting layer; a high-N-value inorganic salt layer, Disposed on the surface of the cathode and the light-emitting layer; and a CPL layer disposed on the high-N-value inorganic salt layer, wherein the high-N-value inorganic salt of the panel at a position above the camera The entire thickness of the salt layer and a part of the thickness of the cathode are removed to form a hollow portion, thereby reducing the thickness of the cathode above the camera to increase the light transmittance, thereby improving the quality of photographing.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种OLED的面板（100）及其制造方法，所述OLED的面板（100）设置在一摄像头（C）上方，所述OLED的面板（100）由上至下依序包含：一基板（1）；一发光层（2），设置在所述基板（1）上；一阴极（3），设置在所述发光层（2）上；一高N值无机盐层（4），设置在所述阴极（3）及所述发光层（2）的表面；以及一CPL层（5），设置在所述高N值无机盐层（4）上；其中，在对应所述摄像头（C）上方位置处的所述面板（100）的所述高N值无机盐层（4）的整个厚度及所述阴极（3）的部分厚度经移除而形成有一中空部（H），藉此减薄在摄像头（C）上方的阴极（3）的厚度，以提高光线的透过率，进而提升拍照质量。

Description

OLED的面板及其制造方法
本申请要求于2020年05月15日提交中国专利局、申请号为202010413067.3、发明名称为“OLED的面板及其制造方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及显示技术领域，特别是涉及一种OLED的面板及其制造方法。
 背景技术
平面显示装置具有机身薄、省电、无辐射等众多优点，得到了广泛的应用，包括有机发光显示装置（OLED, Organic Light Emitting Display）。
OLED具备自发光、高亮度、宽视角、高对比度、可挠曲、低能耗等特性，因此受到广泛的关注，已开始逐渐取代传统液晶显示装置，被广泛应用在手机屏幕、电脑显示器、全彩电视等。0LED显示技术无需背光灯，采用非常薄的有机材料涂层及玻璃基板，当有电流通过时，这些有机材料就会发光。
随着技术的发展，各大面板厂商均正在尝试使用屏下摄像头的技术来提屏幕的高屏占比。所谓屏下摄像头是将前置的摄像头“埋进”手机屏幕下方，因此，不需要特别在屏幕上为摄像头专门预留位置，而提升屏占比。然而，相较于打孔、盲孔，屏下摄像头更需要解决透光率问题。
故，有必要提供一种OLED的面板及其制造方法，以解决现有技术所存在的问题。
 技术问题
本发明的目的在于提供一种OLED的面板及其制造方法，通过减薄在摄像头上方阴极的厚度，以提高光线的透过率，进而保障拍照质量。
 技术解决方案
为达成本发明的前述目的，本发明提供一种OLED的面板，供设置在至少一摄像头上方，所述OLED的面板由上至下依序包含：一基板；一发光层，设置在所述基板上；一阴极，设置在所述发光层上；一高N值无机盐层，设置在所述阴极及所述发光层的表面；一CPL层，设置在所述高N值无机盐层上；其中，在对应所述摄像头上方位置处的所述面板的所述高N值无机盐层的整个厚度及所述阴极的部分厚度经移除而形成有一中空部，所述中空部的数量为对应所述摄像头的数量。
根据本发明一实施例，更包含一TFE结构，形成在所述CPL层及所述高N值无机盐层的表面。
根据本发明一实施例，所述CPL层的材料选自于一高N值无机材料。
根据本发明一实施例，所述高N值无机盐层的材料选自于二氧化硅。
本发明还提供一种OLED的面板，供设置在一摄像头上方，所述OLED的面板由上至下依序包含：一基板；一发光层，设置在所述基板上；一阴极，设置在所述发光层上；一高N值无机盐层，设置在所述阴极及所述发光层的表面；以及一CPL层，设置在所述高N值无机盐层上；其中，在对应所述摄像头上方位置处的所述面板的所述高N值无机盐层的整个厚度及所述阴极的部分厚度经移除而形成有一中空部。
根据本发明一实施例，更包含一TFE结构，形成在所述CPL层及所述高N值无机盐层的表面。
根据本发明一实施例，所述CPL层的材料选自于一高N值无机材料。
根据本发明一实施例，所述高N值无机盐层的材料选自于二氧化硅。
本发明还提供一种OLED的面板的制造方法，所述OLED的面板供设置在一摄像头上方，所述制造方法包含以下步骤：
提供一基板；
在所述基板上由下至上依序形成一发光层及一阴极；
在所述发光层及所述阴极表面形成一高N值无机盐层；
在对应所述摄像头的位置处，移除所述阴极上方的部分的所述高N值无机盐层，以暴露部分的所述阴极；
移除部分的所述经暴露的阴极；以及
形成一CPL层在所述高N值无机盐层上。
根据本发明一实施例，所述CPL层的材料选自于一高N值无机材料。
根据本发明一实施例，所述高N值无机盐层的材料选自于二氧化硅。
根据本发明一实施例，在所述移除部分的所述经暴露的阴极的步骤中，通过干蚀刻以移除所述部分的所述经暴露的阴极。
根据本发明一实施例，在所述发光层及所述阴极表面形成所述高N值无机盐层的步骤中，通过化学气相沉积以形成所述高N值无机盐层。
根据本发明一实施例，在形成所述CPL层在所述阴极上的步骤之后，还包含形成一TFE结构在所述CPL层及所述高N值无机盐层的表面。
 有益效果
本发明的有益效果为：通过所述OLED的面板由上至下依序包含：一基板；一发光层，设置在所述基板上；一阴极，设置在所述发光层上；一高N值无机盐层，设置在所述阴极及所述发光层的表面；以及一CPL层，设置在所述高N值无机盐层上，其中在对应所述摄像头上方位置处的所述面板的所述高N值无机盐层的整个厚度及所述阴极的部分厚度经移除所形成的一中空部，而减薄在摄像头上方的阴极的厚度，以提高光线的透过率，进而提升拍照质量。
 附图说明
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：
图1是本发明的实施例的OLED的面板的示意图。
图2是本发明的OLED的面板的制造方法的第一步骤示意图。
图3是本发明的OLED的面板的制造方法的第二步骤示意图。
图4是本发明的OLED的面板的制造方法的第三步骤示意图。
图5是本发明的OLED的面板的制造方法的第四步骤示意图。
图6是本发明的OLED的面板的制造方法的第五步骤示意图。
图7是本发明的OLED的面板的制造方法的第六步骤示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
请参照图1，根据本发明的实施例的一种OLED的面板100，供设置在一摄像头C上方，所述OLED的面板100由上至下依序包含：一基板1；一发光层2，设置在所述基板1上；一阴极3，设置在所述发光层2上；一高N值无机盐层4，设置在所述阴极3及所述发光层2的表面；一CPL层5，即光提取层，设置在所述高N值无机盐层4上；以及一TFE结构6，形成在所述CPL层5及所述高N值无机盐层4的表面；其中，在对应所述摄像头C上方位置处的所述面板100的所述高N值无机盐层4的整个厚度及所述阴极3的部分厚度经移除而形成有一中空部H。可选地，在本实施例中，所述中空部Ｈ为一个。然而，本发明不以此为限。在其他实施方式中，所述中空部Ｈ的数量可对应摄像头的数量而作增减，进而改善拍照图片的质量，以及提高摄像的范围。
优选地，所述高N值无机盐层4的材料选自于二氧化硅，具有硬度较大、耐磨损的特性，用以保护所述发光层2及所述阴极3。
优选地，所述CPL层5的材料选自于一高N值材料，即高折射率（2.0~2.5）的材料，可改善出光。优选地，在本实施例中，所述CPL层5的材料选自于高N值无机材料。
请参照图2至图7，是本发明的OLED的面板100的制造方法的各个步骤的结构示意图，所述OLED的面板100供设置在一摄像头C上方（如图1），本发明的一种OLED的面板的制造方法包含以下步骤：
提供一基板1，并在所述基板1上由下至上依序形成一发光层2及一阴极3（图2）。
在所述发光层2及所述阴极3表面形成一高N值无机盐层4，藉由其硬度较大、耐磨损的特性，以保护所述发光层2及所述阴极3。在本实施例中，所述高N值无机盐层4形成在所述发光层2及所述阴极3的上表面及侧面。此外，在对应所述摄像头C的位置处（参照第1图），移除所述阴极3上方部分的所述高N值无机盐层4，以暴露部分的所述阴极3（图3）。优选地，所述高N值无机盐层4的材料选自于二氧化硅。
以蚀刻的方式，移除部分的所述经暴露的阴极3（图4及图5），以使所述阴极3减薄。优选地，在本实施例中，通过干刻方式移除部分的所述阴极3。
通过化学气相沉积形成一CPL层5，即光提取层在所述高N值无机盐层4上（图6），以改善出光，且被移除所述高N值无机盐层4及所述阴极3的区域形成有一中空部Ｈ。优选地，所述CPL层5的材料选自于一高N值材料，即高折射率（2.0至2.5）的材料，可改善出光效率。优选地，在本实施例中，所述CPL层5的材料选自于高N值无机材料。
最后，形成一薄膜封装（thin film encapsulation, TFE）结构6在所述CPL层5及所述高N值无机盐层4的表面（图7），以保护整体结构。一般而言，TFE结构由两层或以上的多层薄膜堆迭结构形成，包括无机薄膜层及平坦化层，可通过蒸镀、丝网印刷、喷墨打印等方式来形成。
据此，本发明的OLED的面板由上至下依序包含：一基板；一发光层，设置在所述基板上；一阴极，设置在所述发光层上；一高N值无机盐层，设置在所述阴极及所述发光层的表面；以及一CPL层，设置在所述高N值无机盐层上，其中在对应所述摄像头上方位置处的所述面板的所述高N值无机盐层的整个厚度及所述阴极的部分厚度经移除所形成的一中空部，藉此减薄在摄像头上方的阴极的厚度，以提高光线的透过率，进而提升拍照质量。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (14)

  1. 一种OLED的面板，供设置在至少一摄像头上方，其由上至下依序包含：
    一基板；
    一发光层，设置在所述基板上；
    一阴极，设置在所述发光层上；
    一高N值无机盐层，设置在所述阴极及所述发光层的表面；
    一CPL层，设置在所述高N值无机盐层上；
    其中，在对应所述摄像头上方位置处的所述面板的所述高N值无机盐层的整个厚度及所述阴极的部分厚度经移除而形成有一中空部，所述中空部的数量为对应所述摄像头的数量。
  2. 如权利要求1所述的面板，其中更包含一TFE结构，形成在所述CPL层及所述高N值无机盐层的表面。
  3. 如权利要求1所述的面板，其中所述CPL层的材料选自于一高N值无机材料。
  4. 如权利要求1所述的面板，其中所述高N值无机盐层的材料选自于二氧化硅。
  5. 一种OLED的面板，供设置在一摄像头上方，其由上至下依序包含：
    一基板；
    一发光层，设置在所述基板上；
    一阴极，设置在所述发光层上；
    一高N值无机盐层，设置在所述阴极及所述发光层的表面；以及
    一CPL层，设置在所述高N值无机盐层上，
    其中，在对应所述摄像头上方位置处的所述面板的所述高N值无机盐层的整个厚度及所述阴极的部分厚度经移除而形成有一中空部。
  6. 如权利要求5所述的面板，其中更包含一TFE结构，形成在所述CPL层及所述高N值无机盐层的表面。
  7. 如权利要求5所述的面板，其中所述CPL层的材料选自于一高N值无机材料。
  8. 如权利要求5所述的面板，其中所述高N值无机盐层的材料选自于二氧化硅。
  9. 一种如权利要求1的OLED的面板的制造方法，所述OLED的面板供设置在一摄像头上方，其包含以下步骤：
    提供一基板；
    在所述基板上由下至上依序形成一发光层及一阴极；
    在所述发光层及所述阴极表面形成一高N值无机盐层；
    在对应所述摄像头的位置处，移除所述阴极上方的部分的所述高N值无机盐层，以暴露部分的所述阴极；
    移除部分的所述经暴露的阴极；以及
    形成一CPL层在所述高N值无机盐层上。
  10. 如权利要求9所述的制造方法，其中所述CPL层的材料选自于一高N值无机材料。
  11. 如权利要求9所述的制造方法，其中所述高N值无机盐层的材料选自于二氧化硅。
  12. 如权利要求9所述的制造方法，其中在所述移除部分的所述经暴露的阴极的步骤中，通过干蚀刻以移除所述部分的所述经暴露的阴极。
  13. 如权利要求9所述的制造方法，其中在所述发光层及所述阴极表面形成所述高N值无机盐层的步骤中，通过化学气相沉积以形成所述高N值无机盐层。
  14. 如权利要求9所述的制造方法，其中在形成所述CPL层在所述阴极上的步骤之后，还包含形成一TFE结构在所述CPL层及所述高N值无机盐层的表面。
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