WO2021223294A1 - 覆晶薄膜 - Google Patents

覆晶薄膜 Download PDF

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Publication number
WO2021223294A1
WO2021223294A1 PCT/CN2020/097013 CN2020097013W WO2021223294A1 WO 2021223294 A1 WO2021223294 A1 WO 2021223294A1 CN 2020097013 W CN2020097013 W CN 2020097013W WO 2021223294 A1 WO2021223294 A1 WO 2021223294A1
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WO
WIPO (PCT)
Prior art keywords
chip
film
metal wires
metal
metal wire
Prior art date
Application number
PCT/CN2020/097013
Other languages
English (en)
French (fr)
Inventor
陈毅成
Original Assignee
武汉华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/966,124 priority Critical patent/US11373943B2/en
Publication of WO2021223294A1 publication Critical patent/WO2021223294A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements

Definitions

  • This application relates to the field of display technology, in particular to a flip chip film.
  • the narrow bezel design of display products such as mobile phones has gradually become the mainstream trend in the market.
  • the display panels in display products usually need to use COF (Chip On Film) technology to meet the requirements of narrow bezel products. design.
  • the present application provides a flip chip film to reduce the risk of short circuit between lines in the press-fit area after COF bonding.
  • the application provides a flip chip film, which includes:
  • a plurality of chip-on-film units, a plurality of the chip-on-film units are disposed on the substrate, and each of the chip-on-film units includes a plurality of first metal wires arranged at intervals;
  • a punching slit is arranged between the first metal wires of the adjacent chip-on-film units, and a plurality of the punching slits are connected to each other and arranged side by side, and the substrate is a flexible substrate.
  • each of the flip chip film units further includes at least two second metal wires, the second metal wires and the first metal wires are arranged side by side, and each of the In the chip-on-film unit, at least one first metal wire is provided between two adjacent second metal wires;
  • the second metal wires are connected in a one-to-one correspondence.
  • the first metal wires and the second metal wires are alternately arranged.
  • each chip-on-film unit in each chip-on-film unit, a plurality of first metal wires are arranged between two adjacent second metal wires.
  • each of the flip chip film units further includes a second metal wire. Between the flip-chip film units, the second metal wires are correspondingly connected.
  • the length of the punch cut is between 250 ⁇ m and 400 ⁇ m.
  • a cutting line is provided on a portion of the substrate corresponding to the punching cut, and the cutting line is perpendicular to the extending direction of the first metal wire;
  • the distance between the cutting line and the first metal wire of the two adjacent chip-on-film units is equal.
  • each of the flip chip film units further includes a driving chip, and a plurality of connection terminals are provided on the driving chip, and the plurality of connection terminals are electrically connected to each other in a one-to-one correspondence. One end of the first metal wire.
  • the application also provides a flip chip film, which includes:
  • a plurality of chip-on-film units, a plurality of the chip-on-film units are disposed on the substrate, and each of the chip-on-film units includes a plurality of first metal wires arranged at intervals;
  • a punching cut is provided between the first metal wires of the adjacent chip-on-film units.
  • a plurality of the punching slits communicate with each other and are arranged side by side.
  • each of the flip chip film units further includes at least two second metal wires, the second metal wires and the first metal wires are arranged side by side, and each of the In the chip-on-film unit, at least one first metal wire is provided between two adjacent second metal wires;
  • the second metal wires are connected in a one-to-one correspondence.
  • the first metal wires and the second metal wires are alternately arranged.
  • each chip-on-film unit in each chip-on-film unit, a plurality of first metal wires are arranged between two adjacent second metal wires.
  • each of the flip chip film units further includes a second metal wire. Between the flip-chip film units, the second metal wires are correspondingly connected.
  • the length of the punch cut is between 250 ⁇ m and 400 ⁇ m.
  • a cutting line is provided on a portion of the substrate corresponding to the punching cut, and the cutting line is perpendicular to the extending direction of the first metal wire;
  • the distance between the cutting line and the first metal wire of the two adjacent chip-on-film units is equal.
  • each of the flip chip film units further includes a driving chip, and a plurality of connection terminals are provided on the driving chip, and the plurality of connection terminals are electrically connected to each other in a one-to-one correspondence. One end of the first metal wire.
  • the substrate is a flexible substrate.
  • the chip-on-chip film provided in the present application provides a punching cut between the first metal wires of adjacent chip-on-film units, because the punching cut separates adjacent coatings.
  • the occurrence of metal chips reduces the risk of short circuits between the metal lines in the pressing area after the flip chip unit is bound, and improves the reliability of the product.
  • FIG. 1 is a schematic diagram of the structure of a chip-on-chip film provided by the first embodiment of the present application;
  • Fig. 2 is a schematic cross-sectional structure view taken along the line AA' in Fig. 1;
  • FIG. 3 is a schematic diagram of the structure of a chip-on-chip film provided by a second embodiment of the present application.
  • FIG. 4 is a schematic diagram of the structure of a chip-on-chip film provided by a third embodiment of the present application.
  • FIG. 5 is a schematic diagram of the structure of the chip-on-chip film provided by the fourth embodiment of the present application.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include one or more of the features. In the description of the present application, “multiple” means two or more than two, unless otherwise specifically defined.
  • connection should be understood in a broad sense, unless otherwise clearly specified and limited.
  • it can be a fixed connection or a detachable connection.
  • Connected or integrally connected it can be mechanically connected, or electrically connected or can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two components or the interaction of two components relation.
  • an intermediate medium it can be the internal communication of two components or the interaction of two components relation.
  • the "on" or “under” of the first feature of the second feature may include direct contact between the first and second features, or may include the first and second features Not in direct contact but through other features between them.
  • the "above”, “above” and “above” of the first feature on the second feature include the first feature directly above and obliquely above the second feature, or it simply means that the first feature is higher in level than the second feature.
  • the “below”, “below” and “below” of the second feature of the first feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.
  • chip-on-chip film in this application includes a plurality of chip-on-film units.
  • the following embodiments of this application only take the structure of two adjacent chip-on-film units as an example for description, but are not limited thereto.
  • first metal wire (or the first metal wire and the second metal wire) of the flip-chip film unit in this application can be arranged on one side or two opposite sides of the driving chip.
  • the following embodiments of this application only illustrate the driving chip Metal lines on one side, but not limited to this.
  • first metal wire or the first metal wire and the second metal wire of the flip chip film unit and the driving chip in the present application are only for illustration, which is used to facilitate the description of the following items in the present application. Examples, but cannot be understood as a limitation of the application.
  • the present application only illustrates the structure of part of the first metal wire (or part of the first metal wire and part of the second metal wire) in the flip chip film unit, but it is not limited to this. .
  • FIG. 1 is a schematic diagram of the structure of the chip-on-chip film provided by the first embodiment of the application;
  • FIG. 2 is a schematic diagram of the cross-sectional structure along the line AA' in FIG.
  • the chip on film 100 provided in the first embodiment of the present application includes a substrate 10 and a plurality of chip on film units 11.
  • a plurality of chip-on-film units 11 are disposed on the substrate 10.
  • Each chip-on-film unit 11 includes a plurality of first metal wires 111 and at least two second metal wires 112 arranged at intervals.
  • the second metal wire 112 and the first metal wire 111 are arranged side by side.
  • a punching slit 111A is provided between the first metal wires 111 of adjacent chip-on-film units 11.
  • at least one first metal wire 111 is provided between two adjacent second metal wires 112.
  • the second metal wires 112 are connected in a one-to-one correspondence.
  • a cutout 111A is provided between the first metal wires 111 of adjacent chip-on-film units 11, and the cutout 111A separates adjacent flip-chips.
  • the first metal wires 111 connected between the film units 11 are correspondingly connected, and when the punching area of the chip-on-chip film 100 is cut, since there is no metal circuit at the position of the chip-on-chip film 100 corresponding to the punching cut 111A, it can be reduced
  • the occurrence of metal chips during the punching process reduces the risk of short circuits between the metal lines located in the pressing area after the flip chip unit 11 is bound, and improves the reliability of the product.
  • the substrate 10 is a flexible substrate.
  • the material of the flexible substrate may be a flexible material such as polyimide.
  • the substrate 10 may also be a rigid substrate, and the present application does not specifically limit the material of the substrate.
  • a laser cutting process is used to remove the metal wires between adjacent chip-on-film units to form the punching cut 111A.
  • the specific forming method of the punching cut 111A is not specifically limited in the present application.
  • the number of the second metal wires 112 in the first embodiment of the present application can be set to two, three, or more than three, which is not limited in the present application.
  • the first metal wires 111 and the second metal wires 112 are alternately arranged.
  • one first metal wire 111 is provided between each adjacent second metal wire 112. Since the first metal wires 111 corresponding to the adjacent chip-on-film units 11 are provided with punching slits 111A, During the cutting process, the occurrence of metal debris between two adjacent second metal wires 112 in the chip-on-film unit 11 is reduced, thereby reducing the occurrence of metal wires between the metal lines in the pressing area after the chip-on-film unit 11 is bound. Risk of short circuit.
  • a cutting line 101 is provided on the portion of the base 10 corresponding to the punching cut 111A.
  • the cutting line 101 is perpendicular to the extending direction of the first metal wire 111. In a direction parallel to the extension direction of the first metal wire 111, the distance between the cutting line 101 and the first metal wire 111 of two adjacent chip-on-film units 11 is equal.
  • the cutting line 101 penetrates the portion of the second metal wire 112 corresponding to the punching 111A.
  • the above arrangement makes the distance between the cutting line 101 and the first metal wire 111 of the two adjacent chip-on-film units 11 equal, thereby effectively avoiding the cutting line 101 and the first metal line on one side during the cutting process.
  • the small spacing of 111 leads to the generation of metal debris on this side, which can further reduce the probability of metal debris during the punching process.
  • this arrangement can also improve the alignment accuracy between the flip chip 100 and the punching jig, thereby further improving the punching yield of the product.
  • the length of the punching slit 111A is between 250 ⁇ m and 400 ⁇ m.
  • the ends of the first metal wire 111 and the second metal wire 112 close to the punching area serve as the pressing area, and the circuit of the pressing area It is used for pressing and binding with the lines in the binding area of the display panel to be bound.
  • circuit length of the pressing area of the chip-on-film unit 11 can be set according to actual conditions, and will not be repeated here.
  • the binding area of the display panel includes lines corresponding to the first metal wire 111 and the second metal wire 112, respectively, when the opening length of the punching slit 111A is set between 250 micrometers and 400 micrometers, it is guaranteed that the punching Under the premise of reducing the probability of metal debris in the process, by controlling the opening length of the punching slit 111A to be below 400 microns, it can also effectively prevent the exposed part of the bonding area of the display panel from being short due to contact with other lines. It is connected or damaged, thereby ensuring the stability of the circuit in the binding area of the display panel, and further improving the reliability of the display product.
  • the length of the punching slit 111A can be set to 250 micrometers, 300 micrometers, 350 micrometers, 400 micrometers, or the like.
  • the specific length of the punching slit 111A can be set according to the requirements of the actual product and the structure of the circuit in the binding area of the display panel, which is not limited in this application.
  • the surface of the first metal wire 111 facing the punching slit 111A is a plane, and the plane is perpendicular to the plane where the substrate 10 is located, as shown in FIG. 2.
  • the side of the first metal wire 111 facing the punching slit 111A may also be a curved surface, and the present application does not specifically limit the structure of the side of the first metal wire 111 facing the punching slit 111A.
  • each chip on film unit 11 further includes a driving chip 113.
  • a plurality of connection terminals (not shown in the figure) are provided on the driving chip 113.
  • the plurality of connection terminals are electrically connected to one end of a first metal wire 111 and one end of a second metal wire 112 respectively in a one-to-one correspondence.
  • connection relationship between the connecting terminals in the driving chip 113 and the first metal wire 111 and the second metal wire 112 can refer to the prior art, and will not be repeated here.
  • the first metal wires 111 and the second metal wires 112 are alternately arranged in each chip on film unit 11, so that between every two adjacent second metal wires 112 A first metal wire 111 is provided between each of them. Since the first metal wires 111 corresponding to adjacent chip-on-film units 11 are provided with punching slits 111A, the phase in the chip-on-film unit 11 is reduced during the punching process. The occurrence of metal debris between the two adjacent second metal wires 112 reduces the risk of short circuit between the metal lines in the pressing area after the flip chip unit 11 is bound, and improves the reliability of the product.
  • FIG. 3 is a schematic diagram of the structure of the flip chip film provided by the second embodiment of the application.
  • the difference between the second embodiment of the present application and the first embodiment is that in each chip-on-film unit 11, a plurality of first metal wires 111 are arranged between two adjacent second metal wires 112.
  • the second embodiment of the present application increases the gap between the adjacent second metal wires 112 in the chip-on-film unit 11
  • the number of first metal wires 111 further increases the number of punching cuts 111A in the punching area of the chip on film 100, so that when a punching jig is used to cut the part of the chip on film 100 located in the punching area, it is reduced This reduces the probability of generating metal chips at the edge of the line in the punching area, and further reduces the risk of short circuit between the metal lines in the pressing area after the chip-on-film unit 11 is bound.
  • first metal wires 111 are provided between two adjacent second metal wires 112.
  • two or more first metal wires 111 may be arranged between two adjacent second metal wires 112, which will not be repeated here.
  • each chip-on-film unit 11 includes a second metal wire 112.
  • the second metal wire 112 and the first metal wire 111 are arranged side by side. Between two adjacent chip-on-film units 11, the second metal wires 112 are correspondingly connected.
  • cutouts 111A of the plurality of first metal wires 111 on the side of the second metal wires 112 in the adjacent chip-on-film units 11 are connected to each other and arranged side by side.
  • only one second metal wire 112 is reserved in each chip-on-film unit 11, thereby greatly increasing the number of punching cuts 111A in the punching area of the chip-on-film 100, thereby greatly reducing the punching.
  • the occurrence of metal debris at the edge of the circuit in the area further reduces the risk of short circuit between the metal circuits in the pressing area after the chip-on-film unit 11 is bound.
  • FIG. 5 is a schematic diagram of the structure of the flip chip film provided by the fourth embodiment of the application.
  • the difference between the fourth embodiment of the present application and the first embodiment is that a plurality of punching slits 111A communicate with each other and are arranged side by side.
  • each chip-on-film unit 11 only includes the first metal wire 111.
  • Punching slits 111A are provided between the corresponding first metal wires 111 of adjacent chip-on-film units 11.
  • the punching area in the chip-on-chip film 100 is an area where a plurality of punching cuts 111A are located.
  • a punching jig is used to cut the chip-on-chip film 100 in the punching area where the punching cut 111A is located, since the punching area in this embodiment completely exposes the substrate 10, the edge of the circuit during the punching process can be directly avoided.
  • the generation of metal debris effectively avoids the occurrence of short circuits between the metal lines in the bonding area after the flip chip unit 11 is bonded, and further ensures the stability of the lines in the bonding area after the display panel is bonded, thereby further improving It shows the reliability of the product.
  • the chip-on-chip film provided in the present application provides a punching cut between the first metal wires of adjacent chip-on-film units, because the punching cut separates adjacent coatings.
  • the occurrence of metal chips reduces the risk of short circuits between the metal lines in the pressing area after the flip chip unit is bound, and improves the reliability of the product.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Wire Bonding (AREA)

Abstract

一种覆晶薄膜（100），其包括基底（10）和多个覆晶薄膜单元（11），多个所述覆晶薄膜单元（11）设置于所述基底（10）上，每一所述覆晶薄膜单元（11）包括多条间隔排列的第一金属导线（111）；其中，相邻的所述覆晶薄膜单元（11）的所述第一金属导线（111）之间设置有一冲切口（111A）。

Description

覆晶薄膜 技术领域
本申请涉及显示技术领域，具体涉及一种覆晶薄膜。
 背景技术
目前显示产品如手机的窄边框设计已经逐渐成为市场主流趋势，为了满足市场的应用需求，显示产品中的显示面板通常需要用到COF（Chip On Film，覆晶薄膜）技术以满足窄边框产品的设计。
 技术问题
由于COF基材上的金属线路间距较窄，在对COF的冲切区域进行冲切时，冲切区域的部分金属线路边缘可能会残留一些金属碎屑。当冲切后的COF压合区域与显示面板绑定区域进行压合绑定后，线路边缘残留的金属碎屑增加了COF压合区域线路之间的短路风险，进而易造成产品功能不良。
 技术解决方案
本申请提供一种覆晶薄膜，以降低COF绑定后压合区域线路之间的短路风险。
本申请提供一种覆晶薄膜，其包括：
基底；以及
多个覆晶薄膜单元，多个所述覆晶薄膜单元设置于所述基底上，每一所述覆晶薄膜单元包括多条间隔排列的第一金属导线；
相邻的所述覆晶薄膜单元的所述第一金属导线之间设置有一冲切口，多个所述冲切口相互连通且并排设置，所述基底为柔性基底。
在本申请所述的覆晶薄膜中，每一所述覆晶薄膜单元还包括至少两条第二金属导线，所述第二金属导线与所述第一金属导线并排设置，在每一所述覆晶薄膜单元中，相邻两条所述第二金属导线之间设置有至少一条所述第一金属导线；
在相邻的两个所述覆晶薄膜单元之间，所述第二金属导线之间一一对应连接。
在本申请所述的覆晶薄膜中，在每一所述覆晶薄膜单元中，所述第一金属导线和所述第二金属导线交替设置。
在本申请所述的覆晶薄膜中，在每一所述覆晶薄膜单元中，相邻两条所述第二金属导线之间设置有多条所述第一金属导线。
在本申请所述的覆晶薄膜中，每一所述覆晶薄膜单元还包括一条第二金属导线，所述第二金属导线与所述第一金属导线并排设置，在相邻的两个所述覆晶薄膜单元之间，所述第二金属导线之间对应连接。
在本申请所述的覆晶薄膜中，在所述第一金属导线的延伸方向上，所述冲切口的长度介于250微米到400微米之间。
在本申请所述的覆晶薄膜中，所述基底对应于所述冲切口的部分上设置有一裁切线，所述裁切线垂直于所述第一金属导线的延伸方向；
在平行于所述第一金属导线的延伸方向上，所述裁切线到相邻的两个所述覆晶薄膜单元的所述第一金属导线的距离相等。
在本申请所述的覆晶薄膜中，每一所述覆晶薄膜单元还包括一驱动芯片，所述驱动芯片上设置有多个连接端子，多个所述连接端子一一对应电性连接于一所述第一金属导线的一端。
本申请还提供一种覆晶薄膜，其包括：
基底；以及
多个覆晶薄膜单元，多个所述覆晶薄膜单元设置于所述基底上，每一所述覆晶薄膜单元包括多条间隔排列的第一金属导线；
相邻的所述覆晶薄膜单元的所述第一金属导线之间设置有一冲切口。
在本申请所述的覆晶薄膜中，多个所述冲切口相互连通且并排设置。
在本申请所述的覆晶薄膜中，每一所述覆晶薄膜单元还包括至少两条第二金属导线，所述第二金属导线与所述第一金属导线并排设置，在每一所述覆晶薄膜单元中，相邻两条所述第二金属导线之间设置有至少一条所述第一金属导线；
在相邻的两个所述覆晶薄膜单元之间，所述第二金属导线之间一一对应连接。
在本申请所述的覆晶薄膜中，在每一所述覆晶薄膜单元中，所述第一金属导线和所述第二金属导线交替设置。
在本申请所述的覆晶薄膜中，在每一所述覆晶薄膜单元中，相邻两条所述第二金属导线之间设置有多条所述第一金属导线。
在本申请所述的覆晶薄膜中，每一所述覆晶薄膜单元还包括一条第二金属导线，所述第二金属导线与所述第一金属导线并排设置，在相邻的两个所述覆晶薄膜单元之间，所述第二金属导线之间对应连接。
在本申请所述的覆晶薄膜中，在所述第一金属导线的延伸方向上，所述冲切口的长度介于250微米到400微米之间。
在本申请所述的覆晶薄膜中，所述基底对应于所述冲切口的部分上设置有一裁切线，所述裁切线垂直于所述第一金属导线的延伸方向；
在平行于所述第一金属导线的延伸方向上，所述裁切线到相邻的两个所述覆晶薄膜单元的所述第一金属导线的距离相等。
在本申请所述的覆晶薄膜中，每一所述覆晶薄膜单元还包括一驱动芯片，所述驱动芯片上设置有多个连接端子，多个所述连接端子一一对应电性连接于一所述第一金属导线的一端。
在本申请所述的覆晶薄膜中，所述基底为柔性基底。
 有益效果
相较于现有技术中的覆晶薄膜，本申请提供的覆晶薄膜通过在相邻的覆晶薄膜单元的第一金属导线之间设置一冲切口，由于该冲切口隔断了相邻的覆晶薄膜单元之间对应连接的第一金属导线，进而在对覆晶薄膜的冲切区域进行裁切时，由于覆晶薄膜对应于冲切口的位置不存在金属线路，因而可以降低冲切过程中金属碎屑的产生几率，从而降低了覆晶薄膜单元绑定后位于压合区域的金属线路之间的短路风险，提升了产品的信赖性。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本申请第一实施例提供的覆晶薄膜的结构示意图；
图2是图1中沿AA’线的剖面结构示意图；
图3是本申请第二实施例提供的覆晶薄膜的结构示意图；
图4是本申请第三实施例提供的覆晶薄膜的结构示意图；
图5是本申请第四实施例提供的覆晶薄膜的结构示意图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
需要说明的是，本申请中的覆晶薄膜包括多个覆晶薄膜单元，本申请以下各实施例仅以相邻两个覆晶薄膜单元的结构为例进行说明，但并不限于此。
另外，本申请中覆晶薄膜单元的第一金属导线（或第一金属导线和第二金属导线）可以设置于驱动芯片的一侧或相对两侧，本申请以下各实施例仅示意出驱动芯片一侧的金属线路，但并不限于此。
需要说明的是，本申请中覆晶薄膜单元的第一金属导线（或第一金属导线和第二金属导线）与驱动芯片的具体结构以及连接关系仅为示意，用以方便描述本申请以下各实施例，但不能理解为对本申请的限制。
另外，为方便描述本申请以下各实施例，本申请仅示意出了覆晶薄膜单元中部分第一金属导线（或部分第一金属导线和部分第二金属导线）的结构，但并不限于此。
请参阅图1和图2。其中，图1为本申请第一实施例提供的覆晶薄膜的结构示意图；图2为图1中沿AA’线的剖面结构示意图。
本申请第一实施例提供的覆晶薄膜100包括基底10和多个覆晶薄膜单元11。多个覆晶薄膜单元11设置于基底10上。每一覆晶薄膜单元11包括多条间隔排列的第一金属导线111和至少两条第二金属导线112。第二金属导线112与第一金属导线111并排设置。其中，相邻的覆晶薄膜单元11的第一金属导线111之间设置有一冲切口111A。在每一覆晶薄膜单元11中，相邻两条第二金属导线112之间设置有至少一条第一金属导线111。在相邻的两个覆晶薄膜单元11之间，第二金属导线112之间一一对应连接。
由此，本申请第一实施例提供的覆晶薄膜100通过在相邻的覆晶薄膜单元11的第一金属导线111之间设置一冲切口111A，由于冲切口111A隔断了相邻的覆晶薄膜单元11之间对应连接的第一金属导线111，进而在对覆晶薄膜100的冲切区域进行裁切时，由于覆晶薄膜100对应于冲切口111A的位置不存在金属线路，因而可以降低冲切过程中金属碎屑的产生几率，从而降低了覆晶薄膜单元11绑定后位于压合区域的金属线路之间的短路风险，提升了产品的信赖性。
具体的，基底10为柔性基底。该柔性基底的材料可以为聚酰亚胺等柔性材料。在一些实施例中，基底10还可以为硬质基底，本申请对该基底的材料不作具体限定。
在本申请第一实施例中，采用激光切割工艺清除出相邻覆晶薄膜单元之间的金属导线，以形成冲切口111A，本申请对冲切口111A的具体形成方法不作具体限定。
需要说明的是，本申请第一实施例中第二金属导线112的数量可以设置为两条、三条或三条以上，本申请对此不作限定。
具体的，在本申请第一实施例中，在每一覆晶薄膜单元11中，第一金属导线111和第二金属导线112交替设置。
上述设置通过在每相邻第二金属导线112之间均设置一条第一金属导线111，由于相邻覆晶薄膜单元11对应的第一金属导线111之间均设置有冲切口111A，进而在冲切过程中降低了覆晶薄膜单元11中相邻两条第二金属导线112之间金属碎屑的产生几率，从而降低了覆晶薄膜单元11绑定后位于压合区域的金属线路之间的短路风险。
可以理解的是，当采用冲切治具对覆晶薄膜100位于冲切区域的部分进行裁切时，由于该冲切区域中冲切口111A所在的区域不存在金属线路而直接裸露出基底10，进而在冲切口111A所在的区域内，只需要直接对基底10的裸露部分进行裁切，由此可以降低冲切过程中金属碎屑的产生几率。
进一步的，在本申请第一实施例中，基底10对应于冲切口111A的部分上设置有一裁切线101。裁切线101垂直于第一金属导线111的延伸方向。在平行于第一金属导线111的延伸方向上，裁切线101到相邻的两个覆晶薄膜单元11的第一金属导线111的距离相等。
可以理解的是，沿垂直于第一金属导线111的延伸方向上，裁切线101贯穿第二金属导线112对应于冲切口111A的部分。
上述设置通过使裁切线101到相邻的两个覆晶薄膜单元11的第一金属导线111的距离相等，进而在裁切过程中，有效避免了因裁切线101与一侧的第一金属线路111的间距较小而导致该侧产生金属碎屑，因而可以进一步降低冲切过程中金属碎屑的产生几率。另外，该设置还可以提高覆晶薄膜100与冲切治具之间的对位精度，从而进一步提高产品的冲切良率。
进一步的，在本申请第一实施例中，在第一金属导线111的延伸方向上，冲切口111A的长度介于250微米到400微米之间。
可以理解的是，当覆晶薄膜单元11从覆晶薄膜100上冲切下来之后，第一金属导线111及第二金属导线112靠近冲切区域的一端作为压合区域，该压合区域的线路用于与待绑定的显示面板绑定区域的线路进行压合绑定。
需要说明的是，覆晶薄膜单元11压合区域的线路长度可以根据实际情况进行设定，在此不再赘述。
由于显示面板绑定区域包括有分别一一对应于第一金属导线111和第二金属导线112的线路，进而当冲切口111A的开口长度设置在250微米到400微米之间时，在保证冲切过程中金属碎屑产生几率降低的前提下，通过控制冲切口111A的开口长度在400微米以下，还能够有效避免绑定后的显示面板绑定区域线路的裸露部分因与其他线路接触而发生短接或受到损伤，从而保证了显示面板绑定区域线路的稳定性，进一步提升了显示产品的信赖性。
具体的，冲切口111A的长度可以设置为250微米、300微米、350微米或400微米等。冲切口111A的具体长度可以根据实际产品的需求及显示面板绑定区域线路的结构进行设定，本申请对此不作限定。
进一步的，在本申请第一实施例中，第一金属导线111朝向冲切口111A的一面为平面，该平面垂直于基底10所在的平面，如图2所示。另外，第一金属导线111朝向冲切口111A的一面还可以为弧面，本申请对第一金属导线111朝向冲切口111A的一面的结构不作具体限定。
在本申请第一实施例中，每一覆晶薄膜单元11还包括一驱动芯片113。驱动芯片113上设置有多个连接端子（图中未示出）。多个连接端子分别一一对应电性连接于一第一金属导线111的一端及一第二金属导线112的一端。
需要说明的是，驱动芯片113中的连接端子分别与第一金属导线111及第二金属导线112的具体连接关系可以参照现有技术，在此不再赘述。
本申请第一实施例提供的覆晶薄膜100通过在每一覆晶薄膜单元11中，将第一金属导线111和第二金属导线112交替设置，使得每相邻两条第二金属导线112之间均设置有一条第一金属导线111，由于相邻覆晶薄膜单元11对应的第一金属导线111之间均设置有冲切口111A，进而在冲切过程中降低了覆晶薄膜单元11中相邻两条第二金属导线112之间金属碎屑的产生几率，从而降低了覆晶薄膜单元11绑定后位于压合区域的金属线路之间的短路风险，提升了产品的信赖性。
请参阅图3，图3为本申请第二实施例提供的覆晶薄膜的结构示意图。本申请第二实施例与第一实施例的不同之处在于：在每一覆晶薄膜单元11中，相邻两条第二金属导线112之间设置有多条第一金属导线111。
由于相邻覆晶薄膜单元11之间对应的第一金属导线111之间均设置有一冲切口111A，本申请第二实施例通过增加覆晶薄膜单元11中相邻第二金属导线112之间的第一金属导线111的数量，进而增加了覆晶薄膜100上冲切区域中的冲切口111A数量，从而在采用冲切治具对覆晶薄膜100位于冲切区域的部分进行裁切时，降低了冲切区域的线路边缘金属碎屑的产生几率，进一步降低了覆晶薄膜单元11绑定后位于压合区域的金属线路之间的短路风险。
需要说明的是，在本申请第二实施例中，相邻两条第二金属导线112之间设置有三条第一金属导线111。在一些实施例中，相邻两条第二金属导线112之间还可以设置有二条或三条以上第一金属导线111，在此不再赘述。
请参阅图4，图4为本申请第三实施例提供的覆晶薄膜的结构示意图。本申请第三实施例与第一实施例的不同之处在于：每一覆晶薄膜单元11包括一条第二金属导线112。第二金属导线112与第一金属导线111并排设置。在相邻的两个覆晶薄膜单元11之间，第二金属导线112对应连接。
具体的，相邻覆晶薄膜单元11中位于第二金属导线112一侧的多个第一金属导线111的冲切口111A相互连通且并排设置。
本申请第三实施例通过在每一覆晶薄膜单元11中仅保留一条第二金属导线112，进而大大增加了覆晶薄膜100上冲切区域中的冲切口111A数量，从而大大降低了冲切区域的线路边缘金属碎屑的产生几率，进一步降低了覆晶薄膜单元11绑定后位于压合区域的金属线路之间的短路风险。
请参阅图5，图5为本申请第四实施例提供的覆晶薄膜的结构示意图。本申请第四实施例与第一实施例的不同之处在于：多个冲切口111A相互连通且并排设置。
具体的，在本申请第四实施例中，每一覆晶薄膜单元11仅包括第一金属导线111。相邻覆晶薄膜单元11的对应第一金属导线111之间均设置有冲切口111A。
在本申请第四实施例中，覆晶薄膜100中的冲切区域为多个冲切口111A所在的区域。在采用冲切治具对覆晶薄膜100位于冲切口111A所在的冲切区域进行裁切时，由于本实施例中的冲切区域完全裸露出基底10，进而可以直接避免冲切过程中线路边缘金属碎屑的产生，从而有效避免了覆晶薄膜单元11绑定后位于压合区域的金属线路之间发生短路现象，进一步保证了显示面板绑定后绑定区域线路的稳定性，从而进一步提升了显示产品的信赖性。
相较于现有技术中的覆晶薄膜，本申请提供的覆晶薄膜通过在相邻的覆晶薄膜单元的第一金属导线之间设置一冲切口，由于该冲切口隔断了相邻的覆晶薄膜单元之间对应连接的第一金属导线，进而在对覆晶薄膜的冲切区域进行裁切时，由于覆晶薄膜对应于冲切口的位置不存在金属线路，因而可以降低冲切过程中金属碎屑的产生几率，从而降低了覆晶薄膜单元绑定后位于压合区域的金属线路之间的短路风险，提升了产品的信赖性。
以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的一般技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (18)

  1. 一种覆晶薄膜，其包括：
    基底；以及
    多个覆晶薄膜单元，多个所述覆晶薄膜单元设置于所述基底上，每一所述覆晶薄膜单元包括多条间隔排列的第一金属导线；
    相邻的所述覆晶薄膜单元的所述第一金属导线之间设置有一冲切口，多个所述冲切口相互连通且并排设置，所述基底为柔性基底。
  2. 根据权利要求1所述的覆晶薄膜，其中，每一所述覆晶薄膜单元还包括至少两条第二金属导线，所述第二金属导线与所述第一金属导线并排设置，在每一所述覆晶薄膜单元中，相邻两条所述第二金属导线之间设置有至少一条所述第一金属导线；
    在相邻的两个所述覆晶薄膜单元之间，所述第二金属导线之间一一对应连接。
  3. 根据权利要求2所述的覆晶薄膜，其中，在每一所述覆晶薄膜单元中，所述第一金属导线和所述第二金属导线交替设置。
  4. 根据权利要求2所述的覆晶薄膜，其中，在每一所述覆晶薄膜单元中，相邻两条所述第二金属导线之间设置有多条所述第一金属导线。
  5. 根据权利要求1所述的覆晶薄膜，其中，每一所述覆晶薄膜单元还包括一条第二金属导线，所述第二金属导线与所述第一金属导线并排设置，在相邻的两个所述覆晶薄膜单元之间，所述第二金属导线之间对应连接。
  6. 根据权利要求1所述的覆晶薄膜，其中，在所述第一金属导线的延伸方向上，所述冲切口的长度介于250微米到400微米之间。
  7. 根据权利要求1所述的覆晶薄膜，其中，所述基底对应于所述冲切口的部分上设置有一裁切线，所述裁切线垂直于所述第一金属导线的延伸方向；
    在平行于所述第一金属导线的延伸方向上，所述裁切线到相邻的两个所述覆晶薄膜单元的所述第一金属导线的距离相等。
  8. 根据权利要求1所述的覆晶薄膜，其中，每一所述覆晶薄膜单元还包括一驱动芯片，所述驱动芯片上设置有多个连接端子，多个所述连接端子一一对应电性连接于一所述第一金属导线的一端。
  9. 一种覆晶薄膜，其包括：
    基底；以及
    多个覆晶薄膜单元，多个所述覆晶薄膜单元设置于所述基底上，每一所述覆晶薄膜单元包括多条间隔排列的第一金属导线；
    相邻的所述覆晶薄膜单元的所述第一金属导线之间设置有一冲切口。
  10. 根据权利要求9所述的覆晶薄膜，其中，多个所述冲切口相互连通且并排设置。
  11. 根据权利要求9所述的覆晶薄膜，其中，每一所述覆晶薄膜单元还包括至少两条第二金属导线，所述第二金属导线与所述第一金属导线并排设置，在每一所述覆晶薄膜单元中，相邻两条所述第二金属导线之间设置有至少一条所述第一金属导线；
    在相邻的两个所述覆晶薄膜单元之间，所述第二金属导线之间一一对应连接。
  12. 根据权利要求11所述的覆晶薄膜，其中，在每一所述覆晶薄膜单元中，所述第一金属导线和所述第二金属导线交替设置。
  13. 根据权利要求11所述的覆晶薄膜，其中，在每一所述覆晶薄膜单元中，相邻两条所述第二金属导线之间设置有多条所述第一金属导线。
  14. 根据权利要求9所述的覆晶薄膜，其中，每一所述覆晶薄膜单元还包括一条第二金属导线，所述第二金属导线与所述第一金属导线并排设置，在相邻的两个所述覆晶薄膜单元之间，所述第二金属导线之间对应连接。
  15. 根据权利要求9所述的覆晶薄膜，其中，在所述第一金属导线的延伸方向上，所述冲切口的长度介于250微米到400微米之间。
  16. 根据权利要求9所述的覆晶薄膜，其中，所述基底对应于所述冲切口的部分上设置有一裁切线，所述裁切线垂直于所述第一金属导线的延伸方向；
    在平行于所述第一金属导线的延伸方向上，所述裁切线到相邻的两个所述覆晶薄膜单元的所述第一金属导线的距离相等。
  17. 根据权利要求9所述的覆晶薄膜，其中，每一所述覆晶薄膜单元还包括一驱动芯片，所述驱动芯片上设置有多个连接端子，多个所述连接端子一一对应电性连接于一所述第一金属导线的一端。
  18. 根据权利要求9所述的覆晶薄膜，其中，所述基底为柔性基底。
PCT/CN2020/097013 2020-05-08 2020-06-19 覆晶薄膜 WO2021223294A1 (zh)

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