WO2021210593A1 - 赤外線センシングデバイス及びそれに用いる抵抗可変膜 - Google Patents

赤外線センシングデバイス及びそれに用いる抵抗可変膜 Download PDF

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Publication number
WO2021210593A1
WO2021210593A1 PCT/JP2021/015365 JP2021015365W WO2021210593A1 WO 2021210593 A1 WO2021210593 A1 WO 2021210593A1 JP 2021015365 W JP2021015365 W JP 2021015365W WO 2021210593 A1 WO2021210593 A1 WO 2021210593A1
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WIPO (PCT)
Prior art keywords
infrared
irradiation
variable resistance
resistance
variable
Prior art date
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Ceased
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PCT/JP2021/015365
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English (en)
French (fr)
Japanese (ja)
Inventor
雅典 坂本
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Kyoto University NUC
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Kyoto University NUC
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Publication date
Application filed by Kyoto University NUC filed Critical Kyoto University NUC
Priority to EP21788628.2A priority Critical patent/EP4137789A4/en
Priority to JP2022515403A priority patent/JP7837020B2/ja
Priority to CN202180027792.XA priority patent/CN116075700A/zh
Priority to US17/996,046 priority patent/US12276550B2/en
Publication of WO2021210593A1 publication Critical patent/WO2021210593A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J5/22—Electrical features thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/046—Materials; Selection of thermal materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/58—Radiation pyrometry, e.g. infrared or optical thermometry using absorption; using extinction effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors

Definitions

  • An object of the present invention is to provide a new infrared sensing device capable of detecting infrared rays even with a simple structure.
  • the relaxation time from local surface plasmon excitation is tens of femt to hundreds of picoseconds for many LSPR-IR absorbent materials (infrared light responsive LSPR materials), but this relaxation for copper sulfide, cesium-doped tungsten oxide, etc.
  • a long-life component of 1 ns or more is contained in an hour. It is considered that the LSPR-IR absorbent material which can have such a long relaxation time causes a transient transition of the electronic state by irradiation with infrared rays, which contributes to an increase or decrease in electrical resistance.
  • both the first material and the second material are transparent conductive oxides.
  • This form is suitable for providing a device that is translucent in the visible range.
  • it is possible to achieve good translucency in the visible region even in the form of using copper sulfide nanoparticles.
  • an additional heat radiating part such as a heat sink may be connected to the board.
  • the temperature controller of the above may be used as an additional heat sink to promote heat dissipation from the variable resistance section.
  • the electrical resistance of the variable resistance unit 13 is such that if the major carrier of the variable resistance unit 13 and the carrier supplied from the carrier supply unit 23 are of the same type, that is, if both are electrons or both holes, infrared irradiation can be started. It will decrease due to the corresponding increase in major carriers.
  • the electrical resistance of the variable resistance section 13 is infrared if the major carrier of the variable resistance section 13 and the carrier supplied from the carrier supply section 23 are different, that is, if one of the carriers is an electron and the other is a hole. Increased by carrier recombination upon initiation of irradiation.
  • the device according to the present embodiment has a relatively high sensitivity to irradiation of near infrared rays up to a wavelength of 2.5 ⁇ m, and may have a wavelength selectivity with a relatively low sensitivity for infrared rays having a wavelength longer than this.
  • Such wavelength selectivity is an advantageous feature from the viewpoint of suppressing noise due to heat conduction.
  • the measurement sample is blood and the infrared absorbing component is glucose.
  • the measurement sample may be a part of a living body such as a fingertip or an earlobe.
  • the blood glucose level of blood can be calculated based on the absorption rate of infrared rays around 1500 nm, which can be transmitted through the living body and is characteristically absorbed by glucose, by the living body. That is, the infrared transmittance measuring device 500 can be used as a blood glucose level measuring device.
  • This blood glucose level measuring device is a so-called non-invasive sensor, and is a sensor that takes advantage of the feature of the device 200 that it can handle molecules whose concentration and concentration distribution in the body change at high speed. This device can easily be a wearable sensor that takes advantage of the flexibility of the variable resistance unit 50.
  • ruthenium oxide examples include those represented by RuO 2 or RuO 2-x (0 ⁇ x ⁇ 1). Similarly, rhenium oxide is represented by ReO 2 or ReO 2-x (0 ⁇ x ⁇ 1), and molybdenum oxide is represented by MoO 3 or MoO 3-x (0 ⁇ x ⁇ 1). As the tungsten oxide, those represented by WO 3 or WO 3-x (0 ⁇ x ⁇ 1) can be exemplified.
  • a material capable of exhibiting such a long active carrier relaxation time after excitation of LSPR, regardless of the wavelength and intensity of pump light, is suitable as an LSPR-IR absorbent material.
  • LSPR-IR absorbent material As the time-resolved transient absorption spectral method, a direct method for directly measuring the entire time of the phenomenon may be applied.
  • the first ink contains copper sulfide nanoparticles and oleylamine, which is a compound that can coordinate with the copper sulfide nanoparticles.
  • TGA thermogravimetric analysis
  • the ratio of the mass of oleylamine to the total mass of copper sulfide nanoparticles and oleylamine was 10%. This ratio was the same in the subsequent examples.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
PCT/JP2021/015365 2020-04-13 2021-04-13 赤外線センシングデバイス及びそれに用いる抵抗可変膜 Ceased WO2021210593A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP21788628.2A EP4137789A4 (en) 2020-04-13 2021-04-13 INFRARED DETECTION DEVICE AND VARIABLE RESISTANCE FILM USING SAME
JP2022515403A JP7837020B2 (ja) 2020-04-13 2021-04-13 赤外線センシングデバイス及びそれに用いる抵抗可変膜
CN202180027792.XA CN116075700A (zh) 2020-04-13 2021-04-13 红外线传感器件和用于该器件的电阻可变膜
US17/996,046 US12276550B2 (en) 2020-04-13 2021-04-13 Infrared sensing device and variable resistance film included in the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020071711 2020-04-13
JP2020-071711 2020-04-13

Publications (1)

Publication Number Publication Date
WO2021210593A1 true WO2021210593A1 (ja) 2021-10-21

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US (1) US12276550B2 (https=)
EP (1) EP4137789A4 (https=)
JP (1) JP7837020B2 (https=)
CN (1) CN116075700A (https=)
WO (1) WO2021210593A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119805828B (zh) * 2025-03-17 2025-07-15 中国人民解放军国防科技大学 一种光电耦合型lspr变红外发射率器件及其制备方法与应用

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JPH1062239A (ja) * 1996-08-21 1998-03-06 Mitsubishi Materials Corp 赤外線検出素子
JP2001013010A (ja) 1999-06-28 2001-01-19 Toyota Central Res & Dev Lab Inc 抵抗変化型赤外線検出器
JP2001183230A (ja) * 1999-12-24 2001-07-06 Kokusai Kiban Zairyo Kenkyusho:Kk 光放射エネルギー強度測定装置
JP2008139072A (ja) * 2006-11-30 2008-06-19 Nec Corp 赤外線検知器及びその温度制御方法
WO2016067905A1 (ja) * 2014-10-30 2016-05-06 住友金属鉱山株式会社 熱線遮蔽粒子、熱線遮蔽粒子分散液、熱線遮蔽粒子分散体、熱線遮蔽粒子分散体合わせ透明基材、赤外線吸収透明基材、熱線遮蔽粒子の製造方法
WO2018101446A1 (ja) * 2016-12-02 2018-06-07 国立大学法人京都大学 光電変換機能を有する電子デバイス
JP2018524820A (ja) * 2015-07-28 2018-08-30 ネクスドット 向上した性能を備える、ナノ結晶を利用した中遠赤外光検出器
JP2019002852A (ja) * 2017-06-16 2019-01-10 株式会社豊田中央研究所 電磁波検出器およびその製造方法

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EP2072976A4 (en) * 2006-10-11 2013-08-14 Panasonic Corp ELECTRONIC EQUIPMENT
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JP2012164980A (ja) 2011-01-21 2012-08-30 Sumitomo Metal Mining Co Ltd 光電変換装置とその製造方法
EP2581721B1 (en) * 2011-10-10 2019-05-08 Samsung Electronics Co., Ltd Infrared thermal detector and method of manufacturing the same
KR101922119B1 (ko) * 2011-12-22 2019-02-14 삼성전자주식회사 적외선 검출기 및 이를 사용하는 적외선 검출 방법
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JPH1062239A (ja) * 1996-08-21 1998-03-06 Mitsubishi Materials Corp 赤外線検出素子
JP2001013010A (ja) 1999-06-28 2001-01-19 Toyota Central Res & Dev Lab Inc 抵抗変化型赤外線検出器
JP2001183230A (ja) * 1999-12-24 2001-07-06 Kokusai Kiban Zairyo Kenkyusho:Kk 光放射エネルギー強度測定装置
JP2008139072A (ja) * 2006-11-30 2008-06-19 Nec Corp 赤外線検知器及びその温度制御方法
WO2016067905A1 (ja) * 2014-10-30 2016-05-06 住友金属鉱山株式会社 熱線遮蔽粒子、熱線遮蔽粒子分散液、熱線遮蔽粒子分散体、熱線遮蔽粒子分散体合わせ透明基材、赤外線吸収透明基材、熱線遮蔽粒子の製造方法
JP2018524820A (ja) * 2015-07-28 2018-08-30 ネクスドット 向上した性能を備える、ナノ結晶を利用した中遠赤外光検出器
WO2018101446A1 (ja) * 2016-12-02 2018-06-07 国立大学法人京都大学 光電変換機能を有する電子デバイス
JP2019002852A (ja) * 2017-06-16 2019-01-10 株式会社豊田中央研究所 電磁波検出器およびその製造方法

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See also references of EP4137789A4

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Publication number Publication date
CN116075700A (zh) 2023-05-05
JP7837020B2 (ja) 2026-03-30
US12276550B2 (en) 2025-04-15
JPWO2021210593A1 (https=) 2021-10-21
EP4137789A1 (en) 2023-02-22
US20230184592A1 (en) 2023-06-15
EP4137789A4 (en) 2023-10-11

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