JPWO2021210593A1 - - Google Patents

Info

Publication number
JPWO2021210593A1
JPWO2021210593A1 JP2022515403A JP2022515403A JPWO2021210593A1 JP WO2021210593 A1 JPWO2021210593 A1 JP WO2021210593A1 JP 2022515403 A JP2022515403 A JP 2022515403A JP 2022515403 A JP2022515403 A JP 2022515403A JP WO2021210593 A1 JPWO2021210593 A1 JP WO2021210593A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022515403A
Other languages
Japanese (ja)
Other versions
JP7837020B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021210593A1 publication Critical patent/JPWO2021210593A1/ja
Application granted granted Critical
Publication of JP7837020B2 publication Critical patent/JP7837020B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J5/22—Electrical features thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/046—Materials; Selection of thermal materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/58—Radiation pyrometry, e.g. infrared or optical thermometry using absorption; using extinction effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2022515403A 2020-04-13 2021-04-13 赤外線センシングデバイス及びそれに用いる抵抗可変膜 Active JP7837020B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020071711 2020-04-13
JP2020071711 2020-04-13
PCT/JP2021/015365 WO2021210593A1 (ja) 2020-04-13 2021-04-13 赤外線センシングデバイス及びそれに用いる抵抗可変膜

Publications (2)

Publication Number Publication Date
JPWO2021210593A1 true JPWO2021210593A1 (https=) 2021-10-21
JP7837020B2 JP7837020B2 (ja) 2026-03-30

Family

ID=78085187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022515403A Active JP7837020B2 (ja) 2020-04-13 2021-04-13 赤外線センシングデバイス及びそれに用いる抵抗可変膜

Country Status (5)

Country Link
US (1) US12276550B2 (https=)
EP (1) EP4137789A4 (https=)
JP (1) JP7837020B2 (https=)
CN (1) CN116075700A (https=)
WO (1) WO2021210593A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119805828B (zh) * 2025-03-17 2025-07-15 中国人民解放军国防科技大学 一种光电耦合型lspr变红外发射率器件及其制备方法与应用

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1062239A (ja) * 1996-08-21 1998-03-06 Mitsubishi Materials Corp 赤外線検出素子
JP2008139072A (ja) * 2006-11-30 2008-06-19 Nec Corp 赤外線検知器及びその温度制御方法
WO2016067905A1 (ja) * 2014-10-30 2016-05-06 住友金属鉱山株式会社 熱線遮蔽粒子、熱線遮蔽粒子分散液、熱線遮蔽粒子分散体、熱線遮蔽粒子分散体合わせ透明基材、赤外線吸収透明基材、熱線遮蔽粒子の製造方法
WO2017170598A1 (ja) * 2016-04-01 2017-10-05 住友金属鉱山株式会社 赤外線吸収材料、赤外線吸収材料分散液、赤外線吸収材料分散体、赤外線吸収材料分散体合わせ透明基材、赤外線吸収透明基材
WO2018101446A1 (ja) * 2016-12-02 2018-06-07 国立大学法人京都大学 光電変換機能を有する電子デバイス
JP2018524820A (ja) * 2015-07-28 2018-08-30 ネクスドット 向上した性能を備える、ナノ結晶を利用した中遠赤外光検出器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2773730B2 (ja) * 1996-03-07 1998-07-09 日本電気株式会社 光伝導型赤外線検出素子
JP4075222B2 (ja) 1999-06-28 2008-04-16 株式会社豊田中央研究所 抵抗変化型赤外線検出器
JP2001183230A (ja) 1999-12-24 2001-07-06 Kokusai Kiban Zairyo Kenkyusho:Kk 光放射エネルギー強度測定装置
EP2072976A4 (en) * 2006-10-11 2013-08-14 Panasonic Corp ELECTRONIC EQUIPMENT
JP2009175124A (ja) * 2007-12-27 2009-08-06 Rohm Co Ltd プラズモン共鳴検出器
JP2012164980A (ja) 2011-01-21 2012-08-30 Sumitomo Metal Mining Co Ltd 光電変換装置とその製造方法
EP2581721B1 (en) * 2011-10-10 2019-05-08 Samsung Electronics Co., Ltd Infrared thermal detector and method of manufacturing the same
KR101922119B1 (ko) * 2011-12-22 2019-02-14 삼성전자주식회사 적외선 검출기 및 이를 사용하는 적외선 검출 방법
KR102040149B1 (ko) * 2013-02-01 2019-11-04 삼성전자주식회사 적외선 검출기
JP6172522B2 (ja) * 2013-12-04 2017-08-02 ソニー株式会社 赤外線検出素子およびその検出方法、並びに電子機器
JP7204667B2 (ja) * 2017-04-20 2023-01-16 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 光検出器
JP6918591B2 (ja) 2017-06-16 2021-08-11 株式会社豊田中央研究所 電磁波検出器およびその製造方法
JP7232978B2 (ja) * 2017-12-11 2023-03-06 パナソニックＩｐマネジメント株式会社 赤外線センサおよび赤外線センサのボロメータ赤外線受光部を冷却する方法
TWI679782B (zh) * 2017-12-19 2019-12-11 財團法人工業技術研究院 感測裝置及其製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1062239A (ja) * 1996-08-21 1998-03-06 Mitsubishi Materials Corp 赤外線検出素子
JP2008139072A (ja) * 2006-11-30 2008-06-19 Nec Corp 赤外線検知器及びその温度制御方法
WO2016067905A1 (ja) * 2014-10-30 2016-05-06 住友金属鉱山株式会社 熱線遮蔽粒子、熱線遮蔽粒子分散液、熱線遮蔽粒子分散体、熱線遮蔽粒子分散体合わせ透明基材、赤外線吸収透明基材、熱線遮蔽粒子の製造方法
JP2018524820A (ja) * 2015-07-28 2018-08-30 ネクスドット 向上した性能を備える、ナノ結晶を利用した中遠赤外光検出器
WO2017170598A1 (ja) * 2016-04-01 2017-10-05 住友金属鉱山株式会社 赤外線吸収材料、赤外線吸収材料分散液、赤外線吸収材料分散体、赤外線吸収材料分散体合わせ透明基材、赤外線吸収透明基材
WO2018101446A1 (ja) * 2016-12-02 2018-06-07 国立大学法人京都大学 光電変換機能を有する電子デバイス

Also Published As

Publication number Publication date
CN116075700A (zh) 2023-05-05
JP7837020B2 (ja) 2026-03-30
US12276550B2 (en) 2025-04-15
EP4137789A1 (en) 2023-02-22
US20230184592A1 (en) 2023-06-15
WO2021210593A1 (ja) 2021-10-21
EP4137789A4 (en) 2023-10-11

Similar Documents

Publication Publication Date Title
BR112023005462A2 (https=)
BR112023012656A2 (https=)
BR112021014123A2 (https=)
BR112023009656A2 (https=)
BR112022009896A2 (https=)
BR112021017747A2 (https=)
BR112022024743A2 (https=)
BR112022026905A2 (https=)
BR112023011738A2 (https=)
BR112023004146A2 (https=)
BR112023006729A2 (https=)
BR102021018859A2 (https=)
JPWO2021210593A1 (https=)
BR112023016292A2 (https=)
BR112023011539A2 (https=)
BR112023011610A2 (https=)
BR112023008976A2 (https=)
BR102021020147A2 (https=)
BR102021018926A2 (https=)
BR102021018167A2 (https=)
BR102021017576A2 (https=)
BR102021016837A2 (https=)
BR102021016551A2 (https=)
BR102021016375A2 (https=)
BR102021016200A2 (https=)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230707

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20231122

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250204

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250401

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20250401

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20250401

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20250805

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251104

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20260303

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20260309

R150 Certificate of patent or registration of utility model

Ref document number: 7837020

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150