CN116075700A - 红外线传感器件和用于该器件的电阻可变膜 - Google Patents

红外线传感器件和用于该器件的电阻可变膜 Download PDF

Info

Publication number
CN116075700A
CN116075700A CN202180027792.XA CN202180027792A CN116075700A CN 116075700 A CN116075700 A CN 116075700A CN 202180027792 A CN202180027792 A CN 202180027792A CN 116075700 A CN116075700 A CN 116075700A
Authority
CN
China
Prior art keywords
resistance
resistance variable
infrared
irradiation
infrared rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180027792.XA
Other languages
English (en)
Chinese (zh)
Inventor
坂本雅典
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Opptmass Co ltd
Kyoto University NUC
Original Assignee
Opptmass Co ltd
Kyoto University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Opptmass Co ltd, Kyoto University NUC filed Critical Opptmass Co ltd
Publication of CN116075700A publication Critical patent/CN116075700A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J5/22—Electrical features thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/046—Materials; Selection of thermal materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/58—Radiation pyrometry, e.g. infrared or optical thermometry using absorption; using extinction effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
CN202180027792.XA 2020-04-13 2021-04-13 红外线传感器件和用于该器件的电阻可变膜 Pending CN116075700A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020071711 2020-04-13
JP2020-071711 2020-04-13
PCT/JP2021/015365 WO2021210593A1 (ja) 2020-04-13 2021-04-13 赤外線センシングデバイス及びそれに用いる抵抗可変膜

Publications (1)

Publication Number Publication Date
CN116075700A true CN116075700A (zh) 2023-05-05

Family

ID=78085187

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180027792.XA Pending CN116075700A (zh) 2020-04-13 2021-04-13 红外线传感器件和用于该器件的电阻可变膜

Country Status (5)

Country Link
US (1) US12276550B2 (https=)
EP (1) EP4137789A4 (https=)
JP (1) JP7837020B2 (https=)
CN (1) CN116075700A (https=)
WO (1) WO2021210593A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119805828A (zh) * 2025-03-17 2025-04-11 中国人民解放军国防科技大学 一种光电耦合型lspr变红外发射率器件及其制备方法与应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100067016A1 (en) * 2007-12-27 2010-03-18 Rohm Co., Ltd. Plasmon resonance detector
CN104697644A (zh) * 2013-12-04 2015-06-10 索尼公司 红外线检测器、红外线检测方法和电子设备
US20200006582A1 (en) * 2016-12-02 2020-01-02 Kyoto University Electronic device having photoelectric conversion function

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2773730B2 (ja) * 1996-03-07 1998-07-09 日本電気株式会社 光伝導型赤外線検出素子
JPH1062239A (ja) 1996-08-21 1998-03-06 Mitsubishi Materials Corp 赤外線検出素子
JP4075222B2 (ja) 1999-06-28 2008-04-16 株式会社豊田中央研究所 抵抗変化型赤外線検出器
JP2001183230A (ja) 1999-12-24 2001-07-06 Kokusai Kiban Zairyo Kenkyusho:Kk 光放射エネルギー強度測定装置
EP2072976A4 (en) * 2006-10-11 2013-08-14 Panasonic Corp ELECTRONIC EQUIPMENT
JP2008139072A (ja) 2006-11-30 2008-06-19 Nec Corp 赤外線検知器及びその温度制御方法
JP2012164980A (ja) 2011-01-21 2012-08-30 Sumitomo Metal Mining Co Ltd 光電変換装置とその製造方法
EP2581721B1 (en) * 2011-10-10 2019-05-08 Samsung Electronics Co., Ltd Infrared thermal detector and method of manufacturing the same
KR101922119B1 (ko) * 2011-12-22 2019-02-14 삼성전자주식회사 적외선 검출기 및 이를 사용하는 적외선 검출 방법
KR102040149B1 (ko) * 2013-02-01 2019-11-04 삼성전자주식회사 적외선 검출기
JP6299559B2 (ja) 2014-10-30 2018-03-28 住友金属鉱山株式会社 熱線遮蔽粒子、熱線遮蔽粒子分散液、熱線遮蔽粒子分散体、熱線遮蔽粒子分散体合わせ透明基材、赤外線吸収透明基材、熱線遮蔽粒子の製造方法
FR3039531A1 (https=) 2015-07-28 2017-02-03 Nexdot
KR102227688B1 (ko) * 2016-04-01 2021-03-15 스미토모 긴조쿠 고잔 가부시키가이샤 적외선 흡수 재료, 적외선 흡수 재료 분산액, 적외선 흡수 재료 분산체, 적외선 흡수 재료 분산체를 구비한 투명 기재 및 적외선 흡수 투명 기재
JP7204667B2 (ja) * 2017-04-20 2023-01-16 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 光検出器
JP6918591B2 (ja) 2017-06-16 2021-08-11 株式会社豊田中央研究所 電磁波検出器およびその製造方法
JP7232978B2 (ja) * 2017-12-11 2023-03-06 パナソニックＩｐマネジメント株式会社 赤外線センサおよび赤外線センサのボロメータ赤外線受光部を冷却する方法
TWI679782B (zh) * 2017-12-19 2019-12-11 財團法人工業技術研究院 感測裝置及其製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100067016A1 (en) * 2007-12-27 2010-03-18 Rohm Co., Ltd. Plasmon resonance detector
CN104697644A (zh) * 2013-12-04 2015-06-10 索尼公司 红外线检测器、红外线检测方法和电子设备
US20200006582A1 (en) * 2016-12-02 2020-01-02 Kyoto University Electronic device having photoelectric conversion function

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119805828A (zh) * 2025-03-17 2025-04-11 中国人民解放军国防科技大学 一种光电耦合型lspr变红外发射率器件及其制备方法与应用
CN119805828B (zh) * 2025-03-17 2025-07-15 中国人民解放军国防科技大学 一种光电耦合型lspr变红外发射率器件及其制备方法与应用

Also Published As

Publication number Publication date
JP7837020B2 (ja) 2026-03-30
US12276550B2 (en) 2025-04-15
JPWO2021210593A1 (https=) 2021-10-21
EP4137789A1 (en) 2023-02-22
US20230184592A1 (en) 2023-06-15
WO2021210593A1 (ja) 2021-10-21
EP4137789A4 (en) 2023-10-11

Similar Documents

Publication Publication Date Title
Zhang et al. Ultrasensitive photodetectors exploiting electrostatic trapping and percolation transport
Zhang et al. Sensitive deep ultraviolet photodetector and image sensor composed of inorganic lead-free Cs3Cu2I5 perovskite with wide bandgap
Praveen et al. A flexible self‐powered UV photodetector and optical UV filter based on β‐Bi2O3/SnO2 quantum dots schottky heterojunction
Fang et al. Highly narrowband perovskite single-crystal photodetectors enabled by surface-charge recombination
US10622161B2 (en) Narrow band perovskite single crystal photodetectors with tunable spectral response
Gogurla et al. Multifunctional Au-ZnO plasmonic nanostructures for enhanced UV photodetector and room temperature NO sensing devices
Gimenez et al. ZnO− paper based photoconductive UV sensor
Arca et al. Interface trap states in organic photodiodes
Yalagala et al. ZnO nanowires based degradable high-performance photodetectors for eco-friendly green electronics
Cheng et al. Growth and high-performance photodetectors of CsPbBr3 single crystals
EA032733B1 (ru) Спектрометрические устройства
JP6735215B2 (ja) 放射線検出器
KR102908603B1 (ko) 광학 검출기
Liang et al. Highly sensitive UVA and violet photodetector based on single-layer graphene-TiO2 heterojunction
Sharma et al. Optically triggered multilevel resistive switching characteristics of Cu/MoS2/AlN/ITO bilayer memory structure
Srivastava et al. Vanadium substitution: A simple and economic way to improve UV sensing in ZnO
CN116075700A (zh) 红外线传感器件和用于该器件的电阻可变膜
Mahana et al. Photo-sensing characteristics of CuO thin films synthesized by thermal oxidation of Cu metal films
Zhang et al. Low-temperature solution-processed Lu 2 O 3 films for deep-UV photovoltaic detectors with high sensitivity
Saimon et al. Ag@ WO3 core–shell nanocomposite for wide range photo detection
Siddik et al. InAs Colloidal Quantum Dot Photodiode Stack for CMOS-Integrated Infrared Imaging
Kim et al. Transparent UVA photodetectors based on oxide semiconductors for real-time wearable skin protection monitoring
Das et al. Sensitivity of ZnO film-based X-ray sensors: A comprehensive study on the effect of thickness of ZnO layer
US20230361235A1 (en) Heat blocking device, heat blocking film, and heat blocking composition
Aleksandrova Characterization of infrared detector with lead-free perovskite and core–shell quantum dots on silicon substrate

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination