JP7837020B2 - 赤外線センシングデバイス及びそれに用いる抵抗可変膜 - Google Patents

赤外線センシングデバイス及びそれに用いる抵抗可変膜

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Publication number
JP7837020B2
JP7837020B2 JP2022515403A JP2022515403A JP7837020B2 JP 7837020 B2 JP7837020 B2 JP 7837020B2 JP 2022515403 A JP2022515403 A JP 2022515403A JP 2022515403 A JP2022515403 A JP 2022515403A JP 7837020 B2 JP7837020 B2 JP 7837020B2
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Japan
Prior art keywords
variable resistance
infrared
unit
irradiation
sensing device
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JP2022515403A
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English (en)
Japanese (ja)
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JPWO2021210593A1 (https=
Inventor
雅典 坂本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Optmass
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Optmass
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/046—Materials; Selection of thermal materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J5/22—Electrical features thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/58—Radiation pyrometry, e.g. infrared or optical thermometry using absorption; using extinction effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2022515403A 2020-04-13 2021-04-13 赤外線センシングデバイス及びそれに用いる抵抗可変膜 Active JP7837020B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020071711 2020-04-13
JP2020071711 2020-04-13
PCT/JP2021/015365 WO2021210593A1 (ja) 2020-04-13 2021-04-13 赤外線センシングデバイス及びそれに用いる抵抗可変膜

Publications (2)

Publication Number Publication Date
JPWO2021210593A1 JPWO2021210593A1 (https=) 2021-10-21
JP7837020B2 true JP7837020B2 (ja) 2026-03-30

Family

ID=78085187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022515403A Active JP7837020B2 (ja) 2020-04-13 2021-04-13 赤外線センシングデバイス及びそれに用いる抵抗可変膜

Country Status (5)

Country Link
US (1) US12276550B2 (https=)
EP (1) EP4137789A4 (https=)
JP (1) JP7837020B2 (https=)
CN (1) CN116075700A (https=)
WO (1) WO2021210593A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119805828B (zh) * 2025-03-17 2025-07-15 中国人民解放军国防科技大学 一种光电耦合型lspr变红外发射率器件及其制备方法与应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008139072A (ja) 2006-11-30 2008-06-19 Nec Corp 赤外線検知器及びその温度制御方法
WO2016067905A1 (ja) 2014-10-30 2016-05-06 住友金属鉱山株式会社 熱線遮蔽粒子、熱線遮蔽粒子分散液、熱線遮蔽粒子分散体、熱線遮蔽粒子分散体合わせ透明基材、赤外線吸収透明基材、熱線遮蔽粒子の製造方法
JP2018524820A (ja) 2015-07-28 2018-08-30 ネクスドット 向上した性能を備える、ナノ結晶を利用した中遠赤外光検出器

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2773730B2 (ja) * 1996-03-07 1998-07-09 日本電気株式会社 光伝導型赤外線検出素子
JPH1062239A (ja) 1996-08-21 1998-03-06 Mitsubishi Materials Corp 赤外線検出素子
JP4075222B2 (ja) 1999-06-28 2008-04-16 株式会社豊田中央研究所 抵抗変化型赤外線検出器
JP2001183230A (ja) 1999-12-24 2001-07-06 Kokusai Kiban Zairyo Kenkyusho:Kk 光放射エネルギー強度測定装置
EP2072976A4 (en) * 2006-10-11 2013-08-14 Panasonic Corp ELECTRONIC EQUIPMENT
JP2009175124A (ja) * 2007-12-27 2009-08-06 Rohm Co Ltd プラズモン共鳴検出器
JP2012164980A (ja) 2011-01-21 2012-08-30 Sumitomo Metal Mining Co Ltd 光電変換装置とその製造方法
EP2581721B1 (en) * 2011-10-10 2019-05-08 Samsung Electronics Co., Ltd Infrared thermal detector and method of manufacturing the same
KR101922119B1 (ko) * 2011-12-22 2019-02-14 삼성전자주식회사 적외선 검출기 및 이를 사용하는 적외선 검출 방법
KR102040149B1 (ko) * 2013-02-01 2019-11-04 삼성전자주식회사 적외선 검출기
JP6172522B2 (ja) * 2013-12-04 2017-08-02 ソニー株式会社 赤外線検出素子およびその検出方法、並びに電子機器
KR102227688B1 (ko) * 2016-04-01 2021-03-15 스미토모 긴조쿠 고잔 가부시키가이샤 적외선 흡수 재료, 적외선 흡수 재료 분산액, 적외선 흡수 재료 분산체, 적외선 흡수 재료 분산체를 구비한 투명 기재 및 적외선 흡수 투명 기재
US20200006582A1 (en) 2016-12-02 2020-01-02 Kyoto University Electronic device having photoelectric conversion function
JP7204667B2 (ja) * 2017-04-20 2023-01-16 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 光検出器
JP6918591B2 (ja) 2017-06-16 2021-08-11 株式会社豊田中央研究所 電磁波検出器およびその製造方法
JP7232978B2 (ja) * 2017-12-11 2023-03-06 パナソニックＩｐマネジメント株式会社 赤外線センサおよび赤外線センサのボロメータ赤外線受光部を冷却する方法
TWI679782B (zh) * 2017-12-19 2019-12-11 財團法人工業技術研究院 感測裝置及其製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008139072A (ja) 2006-11-30 2008-06-19 Nec Corp 赤外線検知器及びその温度制御方法
WO2016067905A1 (ja) 2014-10-30 2016-05-06 住友金属鉱山株式会社 熱線遮蔽粒子、熱線遮蔽粒子分散液、熱線遮蔽粒子分散体、熱線遮蔽粒子分散体合わせ透明基材、赤外線吸収透明基材、熱線遮蔽粒子の製造方法
JP2018524820A (ja) 2015-07-28 2018-08-30 ネクスドット 向上した性能を備える、ナノ結晶を利用した中遠赤外光検出器

Also Published As

Publication number Publication date
CN116075700A (zh) 2023-05-05
US12276550B2 (en) 2025-04-15
JPWO2021210593A1 (https=) 2021-10-21
EP4137789A1 (en) 2023-02-22
US20230184592A1 (en) 2023-06-15
WO2021210593A1 (ja) 2021-10-21
EP4137789A4 (en) 2023-10-11

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