CN104409555B - 一种基于石墨烯的紫外感应器及其制备方法 - Google Patents
一种基于石墨烯的紫外感应器及其制备方法 Download PDFInfo
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- CN104409555B CN104409555B CN201410733664.9A CN201410733664A CN104409555B CN 104409555 B CN104409555 B CN 104409555B CN 201410733664 A CN201410733664 A CN 201410733664A CN 104409555 B CN104409555 B CN 104409555B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
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CN201410733664.9A CN104409555B (zh) | 2014-12-05 | 2014-12-05 | 一种基于石墨烯的紫外感应器及其制备方法 |
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CN201410733664.9A CN104409555B (zh) | 2014-12-05 | 2014-12-05 | 一种基于石墨烯的紫外感应器及其制备方法 |
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CN104409555A CN104409555A (zh) | 2015-03-11 |
CN104409555B true CN104409555B (zh) | 2016-05-25 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104617180B (zh) * | 2015-01-16 | 2018-01-09 | 浙江大学 | 一种石墨烯/氮化硼/氧化锌紫外探测器及其制备方法 |
CN107104167B (zh) * | 2016-02-22 | 2019-02-15 | 中国科学院理化技术研究所 | 一种超宽谱光探测器 |
CN111142146A (zh) * | 2019-12-26 | 2020-05-12 | 兰州空间技术物理研究所 | 一种便携式辐射剂量计 |
CN114203326B (zh) * | 2021-12-13 | 2024-04-30 | 中国核动力研究设计院 | 石墨烯封装超薄镍-63辐射源薄膜及其制备方法、应用 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101771092A (zh) * | 2009-12-16 | 2010-07-07 | 清华大学 | 一种基于石墨烯/硅肖特基结的光伏电池及其制备方法 |
CN103219403A (zh) * | 2013-04-19 | 2013-07-24 | 苏州大学 | 基于二维层状原子晶体材料的光探测器 |
CN104021881A (zh) * | 2014-06-03 | 2014-09-03 | 无锡格菲电子薄膜科技有限公司 | 一种降低石墨烯方阻的掺杂转移方法 |
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JP5737405B2 (ja) * | 2011-07-29 | 2015-06-17 | 富士通株式会社 | グラフェンナノメッシュの製造方法及び半導体装置の製造方法 |
GB201300695D0 (en) * | 2013-01-15 | 2013-02-27 | Univ Exeter The | Graphene deposition enquiry |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101771092A (zh) * | 2009-12-16 | 2010-07-07 | 清华大学 | 一种基于石墨烯/硅肖特基结的光伏电池及其制备方法 |
CN103219403A (zh) * | 2013-04-19 | 2013-07-24 | 苏州大学 | 基于二维层状原子晶体材料的光探测器 |
CN104021881A (zh) * | 2014-06-03 | 2014-09-03 | 无锡格菲电子薄膜科技有限公司 | 一种降低石墨烯方阻的掺杂转移方法 |
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Owner name: XIAMEN G-CVD MATERIAL TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: XIAMEN G-CVD TECHNOLOGY CO., LTD. Effective date: 20150722 |
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Address after: The torch hi tech Zone Park Albert house building S301c room 361015 Xiamen city of Fujian Province Applicant after: Xiamen G-CVD Graphene Technology Co., Ltd. Address before: 361015 Fujian Province, Xiamen torch hi tech Zone Park Albert House South S301C Applicant before: Xiamen G-CVD Material Technology Co., Ltd. |
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