WO2021199384A1 - Dispositif semi-conducteur et procédé de fabrication de dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur et procédé de fabrication de dispositif semi-conducteur Download PDF

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Publication number
WO2021199384A1
WO2021199384A1 PCT/JP2020/015097 JP2020015097W WO2021199384A1 WO 2021199384 A1 WO2021199384 A1 WO 2021199384A1 JP 2020015097 W JP2020015097 W JP 2020015097W WO 2021199384 A1 WO2021199384 A1 WO 2021199384A1
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Prior art keywords
conductive resin
heat conductive
semiconductor device
wall portion
convex portion
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PCT/JP2020/015097
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English (en)
Japanese (ja)
Inventor
圭介 池田
優 福
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三菱電機株式会社
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Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to PCT/JP2020/015097 priority Critical patent/WO2021199384A1/fr
Publication of WO2021199384A1 publication Critical patent/WO2021199384A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks

Definitions

  • the present disclosure relates to a semiconductor device and a method for manufacturing the semiconductor device.
  • a heat conductive resin is often arranged between the semiconductor module and the heat sink.
  • the power semiconductor device includes a power semiconductor element having a large calorific value.
  • the heat conductive resin provides good heat transfer from the semiconductor module to the heat sink. When the heat conductive resin is heated and pressurized, the semiconductor module and the heat sink are adhered to each other by the heat conductive resin.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2011-192806
  • Patent Document 1 describes a semiconductor device including a semiconductor package (semiconductor module), a heat radiating member (heat sink), and a heat transfer material.
  • the heat radiating member (heat sink) has a recess.
  • the semiconductor package is embedded in the recess.
  • the heat transfer material is arranged between the recess and the semiconductor package.
  • the insulating property may be lowered due to the voids contained in the heat conductive resin. Since the withstand voltage characteristic deteriorates as the void becomes larger, it is possible to suppress the deterioration of the insulating property by making the void smaller.
  • the heat conductive resin is pressurized and cured, the voids become smaller due to the pressure applied. However, when the pressure increases, the thermally conductive resin may leak from between the semiconductor package and the recess of the heat radiating member.
  • the present disclosure has been made in view of the above problems, and an object thereof is to reduce the voids contained in the heat conductive resin and to prevent the heat conductive resin from leaking from between the semiconductor module and the heat sink.
  • the present invention provides a semiconductor device and a method for manufacturing the semiconductor device.
  • the semiconductor device includes a semiconductor module, a heat sink, and a heat conductive resin.
  • the semiconductor module includes a main body portion and a convex portion.
  • the convex portion is connected to the main body portion.
  • the heat sink includes a main surface portion and a concave portion.
  • the recess is provided so as to be recessed from the main surface portion.
  • the thermally conductive resin is sandwiched between the semiconductor module and the heat sink.
  • the recess includes a bottom portion and an inner wall portion.
  • a thermally conductive resin is arranged on the bottom.
  • the inner wall portion rises from the bottom toward the main surface portion.
  • the convex portion protrudes from the main body portion toward the bottom portion in a state of being inserted into the concave portion.
  • the inner wall portion surrounds the convex portion and the heat conductive resin.
  • the thermally conductive resin includes a portion surrounded by a convex portion.
  • the thermally conductive resin includes a portion surrounded by a convex portion. Therefore, even if the pressure applied to the heat conductive resin is large, it is possible to prevent the heat conductive resin from leaking from between the semiconductor module and the heat sink. Therefore, the voids contained in the heat conductive resin can be reduced, and the heat conductive resin can be prevented from leaking from between the semiconductor module and the heat sink.
  • FIG. It is sectional drawing which shows schematic the structure of the semiconductor device which concerns on Embodiment 1.
  • FIG. It is sectional drawing along the line II-II of FIG. It is a flowchart which shows roughly the manufacturing method of the semiconductor device which concerns on Embodiment 1.
  • FIG. It is sectional drawing which shows typically the state of the semiconductor device in the process which arranges the manufacturing method of the semiconductor device which concerns on Embodiment 1.
  • FIG. It is sectional drawing which shows typically the state of the semiconductor device which is being pressurized in the process of being pressurized of the manufacturing method of the semiconductor device which concerns on Embodiment 1.
  • FIG. It is sectional drawing which shows schematic the structure of the semiconductor device which concerns on Embodiment 2.
  • FIG. 5 is a cross-sectional view schematically showing a state of the semiconductor device in the process of arranging the method for manufacturing the semiconductor device according to the fourth embodiment. It is sectional drawing which shows schematic the structure of the semiconductor device which concerns on Embodiment 5.
  • FIG. 5 is a cross-sectional view taken along the line XI-XI of FIG. It is sectional drawing which shows schematic the structure of the semiconductor device which concerns on Embodiment 6. It is sectional drawing along the XIII-XIII line of FIG. FIG.
  • FIG. 5 is a cross-sectional view schematically showing a configuration of a semiconductor device according to a seventh embodiment. It is an enlarged view of the XV region of FIG.
  • FIG. 5 is a cross-sectional view schematically showing a state of the semiconductor device in the process of arranging the method for manufacturing the semiconductor device according to the seventh embodiment.
  • Embodiment 1 The configuration of the semiconductor device 100 according to the first embodiment will be described with reference to FIGS. 1 and 2.
  • the semiconductor device 100 includes a semiconductor module 1, a heat conductive resin 4, and a heat sink 5.
  • the semiconductor module 1, the heat conductive resin 4, and the heat sink 5 are sequentially laminated.
  • the semiconductor module 1 includes a main body portion 2 and a convex portion 3.
  • the convex portion 3 is connected to the main body portion 2.
  • the semiconductor module 1 includes a lower surface portion 1u. The lower surface portion 1u is surrounded by the convex portion 3.
  • the Z-axis direction is the direction in which the semiconductor module 1 and the heat sink 5 are laminated.
  • the upper side is the side where the semiconductor module 1 is arranged with respect to the heat sink 5 in the Z-axis direction.
  • the lower side is the side where the heat sink 5 is arranged with respect to the semiconductor module 1 in the Z-axis direction.
  • the Y-axis direction is a direction orthogonal to the Z-axis direction.
  • the Y-axis direction is a direction extending from the front side of the paper surface to the back side of the paper surface in FIG.
  • the X-axis direction is a direction orthogonal to the Y-axis direction and the Z-axis direction.
  • the heat sink 5 includes a main surface portion 6 and a recess 7.
  • the recess 7 is provided so as to be recessed from the main surface portion 6.
  • the main body portion 2 and the convex portion 3 are inserted into the concave portion 7.
  • the main body 2 is partially inserted into the recess 7.
  • the recess 7 includes a bottom portion 7b and an inner wall portion 7i.
  • a heat conductive resin 4 is arranged on the bottom portion 7b.
  • the inner wall portion 7i rises from the bottom portion 7b toward the main surface portion 6.
  • the inner wall portion 7i may stand up along the Z-axis direction. As will be described later in the second embodiment, the inner wall portion 7i may be inclined.
  • the dimensions of the concave portion 7 in the Z-axis direction are the dimensions of the heat conductive resin 4 filled in the region between the lower surface portion 1u and the bottom portion 7b in the Z-axis direction and the dimensions of the convex portion 3 in the Z-axis direction (protrusion amount). Greater than the difference with.
  • the convex portion 3 of the semiconductor module 1 protrudes from the main body portion 2 toward the bottom portion 7b in a state of being inserted into the concave portion 7.
  • the convex portion 3 includes a tip portion 3e and an outer wall portion 3o.
  • the tip 3e faces the bottom 7b.
  • the tip portion 3e is arranged between the main surface portion 6 and the bottom portion 7b.
  • the tip portion 3e is arranged away from the bottom portion 7b.
  • the heat conductive resin 4 may be sandwiched between the tip portion 3e and the bottom portion 7b.
  • the outer wall portion 3o faces the inner wall portion 7i.
  • the outer wall portion 3o is arranged away from the inner wall portion 7i.
  • the outer wall portion 3o may be in contact with the inner wall portion 7i.
  • the distance between the outer wall portion 3o and the inner wall portion 7i is preferably smaller than the distance between the tip portion 3e and the bottom portion 7b.
  • the convex portion 3 and the concave portion 7 form a labyrinth structure.
  • the labyrinth structure is such that a gap is continuously provided between the tip portion 3e and the bottom portion 7b and between the outer wall portion 3o and the inner wall portion 7i, so that the convex portion 3 and the concave portion 7 are formed. It is a structure in which a gap having an intricate shape is provided between them.
  • the inner wall portion 7i of the concave portion 7 surrounds the convex portion 3 and the heat conductive resin 4.
  • the thermally conductive resin 4 includes a portion surrounded by the convex portion 3. As shown in FIG. 2, the inner wall portion 7i surrounds the outer wall portion 3o.
  • the dimensions of the concave portion 7 in the X-axis direction and the Y-axis direction are larger than the dimensions of the convex portion 3 in the X-axis direction and the Y-axis direction.
  • the convex portion 3 surrounds the thermally conductive resin 4.
  • the convex portion 3 has a rectangular cross section.
  • the heat conductive resin 4 is sandwiched between the semiconductor module 1 and the heat sink 5.
  • the heat conductive resin 4 is surrounded by a recess 7.
  • the upper portion of the heat conductive resin 4 is surrounded by the convex portion 3.
  • the dimension of the heat conductive resin 4 in the Z-axis direction is larger than the dimension of the convex portion 3 in the Z-axis direction.
  • the heat conductive resin 4 is filled in the region between the lower surface portion 1u and the bottom portion 7b.
  • the region between the lower surface portion 1u and the bottom portion 7b is a region in which the lower surface portion 1u is projected onto the bottom portion 7b from the upper side to the lower side in the Z-axis direction.
  • the thermally conductive resin 4 may leak from the region between the lower surface portion 1u and the bottom portion 7b.
  • the thermally conductive resin 4 may be filled in the space between the tip portion 3e and the bottom portion 7b.
  • the thermally conductive resin 4 may reach the outer peripheral edge of the bottom portion 7b.
  • the heat conductive resin 4 may be filled in the space between the outer wall portion 3o and the inner wall portion 7i. The heat conductive resin 4 does not leak from the space between the outer wall portion 3o and the inner wall portion 7i.
  • the heat conductive resin 4 contains a resin component.
  • the material of the resin component is, for example, a thermosetting resin such as an epoxy resin, a silicone resin, or a polyimide resin.
  • the thermally conductive resin 4 may further contain a filler impregnated with the resin component. Thereby, the thermal conductivity of the heat conductive resin 4 can be improved.
  • the filler is, for example, an inorganic filler.
  • the shape of the heat conductive resin 4 is, for example, a sheet.
  • the thermally conductive resin 4 may be a coating film.
  • the thermally conductive resin 4 may have an insulating property.
  • the thickness of the heat conductive resin 4 is, for example, 100 ⁇ m or more and 500 ⁇ m or less.
  • the main body 2 of the semiconductor module 1 includes a semiconductor element 21, a metal wiring member 22, a main body side mold resin portion 23, a bonding material 24, and a main terminal 25.
  • the semiconductor element 21 generates heat during operation. Therefore, the semiconductor element 21 is the main heat source of the semiconductor device 100.
  • a main terminal 25 is joined to the upper surface of the semiconductor element 21 by a joining material 24.
  • the bonding material 24 is, for example, solder.
  • a metal wiring member 22 is joined to the lower surface of the semiconductor element 21.
  • the metal wiring member 22 includes a mounting surface 22a and a back surface 22b facing the mounting surface 22a.
  • a semiconductor element 21 and a main terminal 25 are joined to the mounting surface 22a by a joining material 24.
  • the back surface 22b is joined to the heat sink 5 via a heat conductive resin 4.
  • the material of the metal wiring member 22 is, for example, copper (Cu).
  • the material of the main body side mold resin portion 23 and the convex portion 3 is a mold resin.
  • the main body side mold resin portion 23 seals the semiconductor element 21.
  • the main body side mold resin portion 23 partially seals the metal wiring member 22.
  • the back surface 22b of the metal wiring member 22 is exposed from the main body side mold resin portion 23.
  • the main body side mold resin portion 23 includes a first portion 23a, a second portion 23b, and a third portion 23c.
  • the first part 23a, the second part 23b, and the third part 23c are laminated in this order from the lower side in the Z-axis direction.
  • the boundaries of the convex portion 3, the first portion 23a, the second portion 23b, and the third portion 23c are indicated by broken lines.
  • the convex portion 3 is connected to the first portion 23a.
  • the first portion 23a is arranged on the side opposite to the heat sink 5 with respect to the convex portion 3.
  • the first part 23a surrounds the metal wiring member 22.
  • the lower surface portion 1u is arranged on the lower surface of the first portion 23a and the back surface 22b of the metal wiring member 22.
  • the second portion 23b is arranged on the side opposite to the convex portion 3 with respect to the first portion 23a.
  • the second part 23b surrounds the semiconductor element 21.
  • the third part 23c is arranged on the opposite side of the second part 23b from the first part 23a.
  • the heat sink 5 is configured to dissipate heat generated when the semiconductor element 21 operates to the outside.
  • the heat sink 5 may include a base plate 51 and a plurality of fin portions 52.
  • the base plate 51 is sandwiched between the plurality of fin portions 52 and the semiconductor module 1.
  • the fin portion 52 projects from the base plate 51 to the opposite side of the semiconductor module 1.
  • the heat sink 5 may be air-cooled by air.
  • the heat sink 5 may be water-cooled by flowing a refrigerant (not shown) through the gaps provided between the plurality of fin portions 52.
  • the refrigerant (not shown) is, for example, a heat transferable solution such as water.
  • the heat sink 5 When the heat sink 5 is water-cooled, it can be cooled more than when it is air-cooled.
  • the heat sink 5 may be cooled while being joined to a peripheral member such as a radiator. Since an electric potential can be generated on the metal surface of the heat sink 5, a current can flow through the heat sink 5. Therefore, the heat sink 5 needs to be electrically insulated from the semiconductor module 1.
  • the heat sink 5 and the semiconductor module 1 may be insulated by a heat conductive resin 4 having an insulating property.
  • the material of the heat sink 5 is a conductive metal such as copper (Cu) and aluminum (Al).
  • the manufacturing method of the semiconductor device 100 includes a step S101 for arranging and a step S102 for pressurization.
  • the heat conductive resin 4 is arranged on the bottom portion 7b with the convex portion 3 inserted in the concave portion 7.
  • the heat conductive resin 4 is arranged on the bottom portion 7b of the heat sink 5.
  • the heat conductive resin 4 may be arranged on the lower surface portion 1u of the semiconductor module 1.
  • the heat sink 5 and the semiconductor module are in a state where the convex portion 3 and the heat conductive resin 4 are surrounded by the inner wall portion 7i and the heat conductive resin 4 is surrounded by the convex portion 3.
  • the heat conductive resin 4 is pressurized by being sandwiched between the two. As a result, the semiconductor module 1 and the heat sink 5 are adhered to each other by the heat conductive resin 4.
  • the heat conductive resin 4 is pressurized while being heated in a reduced pressure environment by a vacuum heater press device (not shown) or the like.
  • the direction of pressurization in FIG. 5 is indicated by a white arrow.
  • the thermally conductive resin 4 is temporarily softened while being heated from the temperature in the unheated state (normal temperature) to the temperature at which the main curing is performed. Specifically, the thermally conductive resin 4 is temporarily softened after being semi-cured and before being fully cured.
  • the pressurization of the heat conductive resin 4 is started.
  • the thermally conductive resin 4 is pressurized in the direction of being compressed along the Z-axis direction in a softened state. As a result, voids (not shown) contained in the heat conductive resin 4 are reduced.
  • the dimension of the heat conductive resin 4 in the Z-axis direction under pressure is larger than the dimension of the convex portion 3 in the Z-axis direction. Therefore, even when the entire heat conductive resin 4 is compressed, contact between the tip portion 3e of the convex portion 3 and the bottom portion 7b of the concave portion 7 can be suppressed.
  • the volume of the region between the bottom portion 7b and the lower surface portion 1u after the heat conductive resin 4 is pressed is smaller than the volume of the heat conductive resin 4 before the heat conductive resin 4 is pressed.
  • the volume of the region between the bottom portion 7b and the lower surface portion 1u and the volume of the heat conductive resin 4 will be described in detail with reference to FIGS. 4 and 1.
  • the dimensions W3 and Y-axis of the region between the bottom 7b and the bottom surface 1u do not change before and after pressurization.
  • the distance H3b along the Z axis between the bottom portion 7b and the lower surface portion 1u after the pressurization is smaller than the distance H3a along the Z axis between the bottom portion 7b and the lower surface portion 1u before the pressurization. Therefore, the volume of the region between the bottom portion 7b and the lower surface portion 1u is reduced by pressurization.
  • the volume of the heat conductive resin 4 before the heat conductive resin 4 is pressurized is the dimension W4 of the heat conductive resin 4 in the X-axis direction and the Y axis of the heat conductive resin 4. It is the product of the dimension in the direction and the dimension H4 in the Z-axis direction of the heat conductive resin 4. As shown in FIGS. 4 and 1, the volume of the thermally conductive resin 4 is reduced by pressurization.
  • the heat conductive resin 4 includes a portion surrounded by the convex portion 3. Therefore, the resistance of the flow path of the heat conductive resin 4 is larger than that in the case where the heat conductive resin 4 is not surrounded by the convex portion 3.
  • the flow path is the space between the semiconductor module 1 and the recess 7 (the space between the tip 3e and the bottom 7b and the space between the outer wall 3o and the inner wall 7i). be. Therefore, even if the pressure applied to the heat conductive resin 4 is large, it is possible to prevent the heat conductive resin 4 from leaking from between the semiconductor module 1 and the heat sink 5. Therefore, the voids contained in the heat conductive resin 4 can be reduced, and the heat conductive resin 4 can be suppressed from leaking from between the semiconductor module 1 and the heat sink 5.
  • the heat conductive resin 4 includes a portion surrounded by the convex portion 3. As a result, it is possible to suppress a decrease in the density of the heat conductive resin 4 due to leakage of the heat conductive resin 4 from between the semiconductor module 1 and the heat sink 5. Therefore, the decrease in thermal conductivity of the thermally conductive resin 4 can be suppressed. Further, it is possible to prevent the thickness of the heat conductive resin 4 from being reduced due to the leakage of the heat conductive resin 4. Therefore, the decrease in the insulating property of the heat conductive resin 4 can be suppressed.
  • the heat conductive resin 4 includes a portion surrounded by the convex portion 3. Therefore, the amount of the heat conductive resin 4 that reaches the outer peripheral end of the bottom portion 7b through the gap between the tip portion 3e of the convex portion 3 and the bottom portion 7b of the concave portion 7 is reduced. Further, the convex portion 3 and the heat conductive resin 4 are surrounded by the concave portion 7. Therefore, it is possible to prevent the heat conductive resin 4 from leaking from the outer peripheral end of the bottom portion 7b to the outside of the recess 7 along the inner wall portion 7i.
  • the tip portion 3e is arranged between the main surface portion 6 and the bottom portion 7b.
  • the convex portion 3 and the concave portion 7 can form a labyrinth structure. Therefore, the voids contained in the heat conductive resin 4 can be reduced, and the heat conductive resin 4 can be suppressed from leaking from between the semiconductor module 1 and the heat sink 5.
  • the convex portion 3 and the heat conductive resin 4 are surrounded by the inner wall portion 7i, and the heat conductive resin 4 Is surrounded by the convex portion 3, and the heat conductive resin 4 is pressurized. Therefore, the voids contained in the heat conductive resin 4 can be reduced, and the heat conductive resin 4 can be suppressed from leaking from between the semiconductor module 1 and the heat sink 5.
  • the volume of the region between the bottom portion 7b and the lower surface portion 1u after the heat conductive resin 4 is pressed is the volume before the heat conductive resin 4 is pressed. It is smaller than the volume of the thermally conductive resin 4. Therefore, the heat conductive resin 4 extends from the region between the bottom portion 7b and the lower surface portion 1u to the flow path (the space between the tip portion 3e and the bottom portion 7b and the space between the outer wall portion 3o and the inner wall portion 7i). It becomes possible to flow.
  • Embodiment 2 the configuration of the semiconductor device 100 according to the second embodiment will be described with reference to FIG. Unless otherwise specified, the second embodiment has the same configuration, manufacturing method, and action and effect as those of the first embodiment. Therefore, the same components as those in the first embodiment are designated by the same reference numerals, and the description will not be repeated.
  • the convex portion 3 includes the slope portion 3s.
  • the slope portion 3s faces the inner wall portion 7i.
  • the slope portion 3s is arranged on the outer wall portion 3o.
  • the slope portion 3s is configured to approach the inner wall portion 7i toward the bottom portion 7b. That is, a taper is provided on the outer circumference of the convex portion 3.
  • the starting point of the slope portion 3s may be appropriately provided as long as it is on the side surface of the semiconductor module 1.
  • the main body portion 2 may include a portion to be a slope connected to the slope portion 3s of the convex portion 3.
  • the slope portion 3s is provided in advance on the convex portion 3 before being pressurized.
  • the slope portion 3s may be formed by pressurizing the heat conductive resin 4.
  • the convex portion 3 includes the slope portion 3s.
  • the slope portion 3s is configured to approach the inner wall portion 7i toward the bottom portion 7b.
  • the gap between the convex portion 3 and the inner wall portion 7i is configured to become smaller toward the lower side. Therefore, the width of the flow path of the heat conductive resin 4 becomes smaller toward the lower side. Therefore, the flow path resistance acting on the heat conductive resin 4 increases toward the lower side. Since the thermally conductive resin 4 flows from the lower side to the upper side, it can be suppressed from flowing upward as the flow path resistance on the lower side increases. As a result, it is possible to prevent the thermally conductive resin 4 from leaking from between the inner wall portion 7i and the outer wall portion 3o. Therefore, deterioration of insulation and heat dissipation can be suppressed.
  • Embodiment 3 Next, the configuration of the semiconductor device 100 according to the third embodiment will be described with reference to FIG. 7.
  • the third embodiment has the same configuration as the second embodiment unless otherwise specified. Therefore, the same components as those in the second embodiment are designated by the same reference numerals, and the description will not be repeated.
  • the outer surface of the convex portion 3 is inclined toward the inner wall portion 7i.
  • the inner surface of the convex portion 3 is inclined toward the inner wall portion 7i.
  • the main body portion 2 may be inclined toward the inner wall portion 7i together with the convex portion 3.
  • the convex portion 3 is provided with a slope portion 3s.
  • the slope portion 3s may be curved.
  • the heat conductive resin 4 is pressed by being sandwiched between the heat sink 5 and the semiconductor module 1, so that the heat conductive resin 4 pushes the convex portion 3 from the inside to the outside.
  • the convex portion 3 is inclined toward the inner wall portion 7i. Further, as a result, the slope portion 3s is formed on the convex portion 3.
  • the heat conductive resin 4 is pressed by being sandwiched between the heat sink 5 and the semiconductor module 1, so that the heat conductive resin 4 is formed into a convex portion 3.
  • the convex portion 3 is inclined toward the inner wall portion 7i by pushing the convex portion 3 from the inside to the outside. As a result, the gap between the convex portion 3 and the inner wall portion 7i becomes smaller toward the lower side in the X-axis direction.
  • Embodiment 4 the configuration of the semiconductor device 100 according to the fourth embodiment will be described with reference to FIG. Unless otherwise specified, the fourth embodiment has the same configuration and manufacturing method as the third embodiment. Therefore, the same components as those in the third embodiment are designated by the same reference numerals, and the description will not be repeated.
  • the cutout portion 9 is provided over the outer periphery of at least one of the main body portion 2 and the convex portion 3.
  • a notch 9 is provided over the outer periphery of the main body side mold resin portion 23 of the main body portion 2.
  • the cutout portion 9 includes a first surface 9a and a second surface 9b.
  • the second surface 9b faces the first surface 9a.
  • the convex portion 3 is bent diagonally toward the inner wall portion 7i.
  • the notch portion 9 is open toward the outside of the semiconductor module 1.
  • the cutout portion 9 is provided below the mounting surface 22a of the metal wiring member 22 in the Z-axis direction.
  • the cutout portion 9 has a depth that does not interfere with the metal wiring member 22 in the X-axis direction and the Y-axis direction.
  • the heat conductive resin 4 is pressurized by being sandwiched between the heat sink 5 and the semiconductor module 1, so that the first surface 9a and the second surface 9b of the notch portion 9 are pressed.
  • the convex portion 3 bends diagonally toward the inner wall portion 7i. Further, as a result, the slope portion 3s is formed on the convex portion 3.
  • a notch 9 is provided over the outer periphery of at least one of the main body 2 and the convex portion 3. If the notch 9 is not provided as shown in FIG. 7, the repulsive force generated by the main body side mold resin portion 23 (mold resin) generated when stress is applied to the convex portion 3 is large, so that the convex portion The deformation of 3 is suppressed. Therefore, when the notch portion 9 is not provided, it is necessary to increase the pressure in order to deform the convex portion 3.
  • the notch portion 9 since the notch portion 9 is provided, the distance between the first surface 9a and the second surface 9b of the notch portion 9 becomes small when stress is applied to the convex portion 3. As a result, the repulsive force due to the main body side mold resin portion 23 can be reduced. Therefore, the convex portion 3 can be bent diagonally toward the inner wall portion 7i with a smaller pressure than when the notch portion 9 is not provided. Therefore, the flow path resistance in the gap between the convex portion 3 and the inner wall portion 7i can be increased with a small pressure. Therefore, the leakage of the heat conductive resin 4 from between the semiconductor module 1 and the recess 7 can be suppressed with a small pressure. Further, the slope portion 3s can be provided on the convex portion 3 with a small pressure.
  • Embodiment 5 the configuration of the semiconductor device 100 according to the fifth embodiment will be described with reference to FIGS. 10 and 11. Unless otherwise specified, the fifth embodiment has the same configuration, manufacturing method, and action and effect as those of the first embodiment. Therefore, the same components as those in the first embodiment are designated by the same reference numerals, and the description will not be repeated.
  • the convex portion 3 is in contact with the inner wall portion 7i.
  • the main body 2 may be partially in contact with the inner wall 7i.
  • the outer wall portion 3o of the convex portion 3 is in contact with the inner wall portion 7i of the concave portion 7 over the entire circumference.
  • the convex portion 3 is in contact with the inner wall portion 7i. Therefore, it is possible to prevent the heat conductive resin 4 from leaking from between the convex portion 3 and the inner wall portion 7i, as compared with the case where a gap is provided between the convex portion 3 and the inner wall portion 7i. Therefore, the insulating property and the heat radiating property can be improved.
  • Embodiment 6 the configuration of the semiconductor device 100 according to the sixth embodiment will be described with reference to FIGS. 12 and 13. Unless otherwise specified, the sixth embodiment has the same configuration, manufacturing method, and action and effect as those of the first embodiment. Therefore, the same components as those in the first embodiment are designated by the same reference numerals, and the description will not be repeated.
  • the semiconductor device 100 further contains the sealing resin 8. At least one of the viscosity and elastic modulus of the sealing resin 8 is higher than at least one of the viscosity and elastic modulus of the heat conductive resin 4.
  • the tip portion 3e is arranged away from the bottom portion 7b.
  • the outer wall portion 3o is arranged away from the inner wall portion 7i.
  • the sealing resin 8 seals the space between the tip portion 3e and the bottom portion 7b and between the outer wall portion 3o and the inner wall portion 7i. As shown in FIG. 13, the sealing resin 8 seals the space between the outer wall portion 3o and the inner wall portion 7i over the entire circumference.
  • the semiconductor device 100 further contains the sealing resin 8.
  • the sealing resin 8 seals the space between the tip portion 3e and the bottom portion 7b and the space between the outer wall portion 3o and the inner wall portion 7i. Therefore, the heat conductive resin 4 is the outer wall portion as compared with the case where the space between the tip portion 3e and the bottom portion 7b and the space between the outer wall portion 3o and the inner wall portion 7i are not sealed by the sealing resin 8. Leakage from between 3o and the inner wall portion 7i can be suppressed.
  • At least one of the viscosity and elastic modulus of the sealing resin 8 is higher than at least one of the viscosity and elastic modulus of the heat conductive resin 4. Therefore, it is difficult for the heat conductive resin 4 to pass through the sealing resin 8 and leak from between the outer wall portion 3o and the inner wall portion 7i. Therefore, it is possible to prevent the heat conductive resin 4 from leaking from between the outer wall portion 3o and the inner wall portion 7i.
  • Embodiment 7 the configuration of the semiconductor device 100 according to the seventh embodiment will be described with reference to FIGS. 14 and 15. Unless otherwise specified, the seventh embodiment has the same configuration, manufacturing method, and action and effect as those of the first embodiment. Therefore, the same components as those in the first embodiment are designated by the same reference numerals, and the description will not be repeated.
  • the inner wall portion 7i includes the first tapered portion T1.
  • the first tapered portion T1 is inclined so that the diameter increases from the bottom portion 7b toward the main surface portion 6.
  • the main body portion 2 and the convex portion 3 include a second tapered portion T2.
  • the second tapered portion T2 is configured to be along the first tapered portion T1.
  • the second tapered portion T2 is inclined so that the diameter increases from the tip portion 3e toward the connection position between the main body portion 2 and the convex portion 3.
  • the first tapered portion T1 and the second tapered portion T2 may be inclined in parallel with each other.
  • the dimensions of the outer wall portion 3o at the tip of the convex portion 3 in the X-axis direction and the Y-axis direction are smaller than those in the case where the second tapered portion T2 is not provided.
  • the dimensions of the inner wall portion 7i at the height position of the main surface portion 6 in the X-axis direction and the Y-axis direction are the same as when the first tapered portion T1 is not provided. Therefore, the distance between the outer wall portion 3o and the inner wall portion 7i at the height position of the main surface portion 6 is larger than that in the case where the first tapered portion T1 is not provided.
  • the outer shapes of the semiconductor module 1 and the heat sink 5 when the first tapered portion T1 and the second tapered portion T2 are not provided are shown by dotted lines.
  • the second tapered portion T2 of the convex portion 3 is inserted into the concave portion 7. Before and after pressurization, the first tapered portion T1 and the second tapered portion T2 face each other with a gap.
  • the first tapered portion T1 is inclined so that the diameter increases from the bottom portion 7b toward the main surface portion 6.
  • the second tapered portion T2 is configured to be along the first tapered portion T1. Therefore, the distance between the outer wall portion 3o and the inner wall portion 7i at the height position of the main surface portion 6 is larger than that in the case where the first tapered portion T1 is not provided. Therefore, the permissible error range (tolerance) of the convex portion 3 and the concave portion 7 becomes large, and the productivity of the semiconductor device 100 is improved.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention concerne un dispositif semi-conducteur (100) comprenant un module semi-conducteur (1), un dissipateur thermique (5) et une résine thermoconductrice (4). Le module semi-conducteur (1) comprend un corps principal (2) et une section en saillie (3). Le dissipateur thermique (5) comprend une surface principale (6) et une section en retrait (7). La résine thermoconductrice (4) est interposée entre le module semi-conducteur (1) et le dissipateur thermique (5). La section en saillie (3) fait saillie depuis le corps principal (2) vers une section de plancher (7b), dans un état dans lequel celle-ci est insérée dans la section en retrait (7). Une paroi interne (7i) entoure la section en saillie (3) et la résine thermoconductrice (4). La résine thermoconductrice (4) comprend une section entourée par la section en saillie (3).
PCT/JP2020/015097 2020-04-01 2020-04-01 Dispositif semi-conducteur et procédé de fabrication de dispositif semi-conducteur WO2021199384A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/015097 WO2021199384A1 (fr) 2020-04-01 2020-04-01 Dispositif semi-conducteur et procédé de fabrication de dispositif semi-conducteur

Applications Claiming Priority (1)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011192806A (ja) * 2010-03-15 2011-09-29 Denso Corp 半導体パッケージの防水構造
JP2013065648A (ja) * 2011-09-16 2013-04-11 Mitsubishi Electric Corp 半導体装置及び当該半導体装置の製造方法
JP2014099504A (ja) * 2012-11-14 2014-05-29 Nittoshinko Corp 接着剤層付放熱部材、及び、半導体装置
JP2019057546A (ja) * 2017-09-19 2019-04-11 東芝メモリ株式会社 半導体記憶装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011192806A (ja) * 2010-03-15 2011-09-29 Denso Corp 半導体パッケージの防水構造
JP2013065648A (ja) * 2011-09-16 2013-04-11 Mitsubishi Electric Corp 半導体装置及び当該半導体装置の製造方法
JP2014099504A (ja) * 2012-11-14 2014-05-29 Nittoshinko Corp 接着剤層付放熱部材、及び、半導体装置
JP2019057546A (ja) * 2017-09-19 2019-04-11 東芝メモリ株式会社 半導体記憶装置

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