CN110634751A - 一种功率半导体模块的封装方法及封装结构 - Google Patents
一种功率半导体模块的封装方法及封装结构 Download PDFInfo
- Publication number
- CN110634751A CN110634751A CN201910553364.5A CN201910553364A CN110634751A CN 110634751 A CN110634751 A CN 110634751A CN 201910553364 A CN201910553364 A CN 201910553364A CN 110634751 A CN110634751 A CN 110634751A
- Authority
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- China
- Prior art keywords
- metal layer
- curable material
- power semiconductor
- semiconductor module
- resin layer
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- Granted
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 126
- 239000002184 metal Substances 0.000 claims abstract description 126
- 239000011347 resin Substances 0.000 claims abstract description 85
- 229920005989 resin Polymers 0.000 claims abstract description 85
- 239000000463 material Substances 0.000 claims abstract description 79
- 230000009477 glass transition Effects 0.000 claims abstract description 7
- 238000003825 pressing Methods 0.000 claims abstract description 4
- 239000003822 epoxy resin Substances 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 4
- 229920001568 phenolic resin Polymers 0.000 claims description 4
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 3
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 3
- 239000004962 Polyamide-imide Substances 0.000 claims description 3
- 229920002312 polyamide-imide Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000009719 polyimide resin Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 239000005011 phenolic resin Substances 0.000 claims description 2
- 229920002050 silicone resin Polymers 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 238000012858 packaging process Methods 0.000 description 10
- 238000003486 chemical etching Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000010949 copper Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000005007 epoxy-phenolic resin Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005536 corrosion prevention Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018-119867 | 2018-06-25 | ||
JP2018119867A JP6813728B2 (ja) | 2018-06-25 | 2018-06-25 | パワー半導体モジュール用パッケージの製造方法およびパワー半導体モジュール用パッケージ |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110634751A true CN110634751A (zh) | 2019-12-31 |
CN110634751B CN110634751B (zh) | 2024-01-26 |
Family
ID=68968146
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910553364.5A Active CN110634751B (zh) | 2018-06-25 | 2019-06-25 | 一种功率半导体模块的封装方法及封装结构 |
Country Status (2)
Country | Link |
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JP (1) | JP6813728B2 (zh) |
CN (1) | CN110634751B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116601764A (zh) * | 2020-12-16 | 2023-08-15 | 三菱电机株式会社 | 半导体装置、电力变换装置及移动体 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001332821A (ja) * | 2000-05-25 | 2001-11-30 | Matsushita Electric Ind Co Ltd | 回路基板とその製造方法 |
US6570099B1 (en) * | 1999-11-09 | 2003-05-27 | Matsushita Electric Industrial Co., Ltd. | Thermal conductive substrate and the method for manufacturing the same |
JP2008218617A (ja) * | 2007-03-02 | 2008-09-18 | Matsushita Electric Ind Co Ltd | 放熱基板及びこれを用いた回路モジュール |
CN108493166A (zh) * | 2018-04-23 | 2018-09-04 | 南通市索新功率电子有限公司 | 一种功率半导体模块封装结构及封装方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001203313A (ja) * | 1999-11-09 | 2001-07-27 | Matsushita Electric Ind Co Ltd | 熱伝導基板およびその製造方法 |
JP4383257B2 (ja) * | 2004-05-31 | 2009-12-16 | 三洋電機株式会社 | 回路装置およびその製造方法 |
JP2012114311A (ja) * | 2010-11-26 | 2012-06-14 | Toshiba Corp | Ledモジュール |
JP5379816B2 (ja) * | 2011-02-23 | 2013-12-25 | 三菱電機株式会社 | 電力用半導体装置 |
JP6301602B2 (ja) * | 2013-07-22 | 2018-03-28 | ローム株式会社 | パワーモジュールおよびその製造方法 |
JP6557540B2 (ja) * | 2015-07-31 | 2019-08-07 | 日立オートモティブシステムズ株式会社 | パワーモジュール |
-
2018
- 2018-06-25 JP JP2018119867A patent/JP6813728B2/ja active Active
-
2019
- 2019-06-25 CN CN201910553364.5A patent/CN110634751B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6570099B1 (en) * | 1999-11-09 | 2003-05-27 | Matsushita Electric Industrial Co., Ltd. | Thermal conductive substrate and the method for manufacturing the same |
JP2001332821A (ja) * | 2000-05-25 | 2001-11-30 | Matsushita Electric Ind Co Ltd | 回路基板とその製造方法 |
JP2008218617A (ja) * | 2007-03-02 | 2008-09-18 | Matsushita Electric Ind Co Ltd | 放熱基板及びこれを用いた回路モジュール |
CN108493166A (zh) * | 2018-04-23 | 2018-09-04 | 南通市索新功率电子有限公司 | 一种功率半导体模块封装结构及封装方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116601764A (zh) * | 2020-12-16 | 2023-08-15 | 三菱电机株式会社 | 半导体装置、电力变换装置及移动体 |
Also Published As
Publication number | Publication date |
---|---|
JP6813728B2 (ja) | 2021-01-13 |
CN110634751B (zh) | 2024-01-26 |
JP2020004765A (ja) | 2020-01-09 |
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Legal Events
Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200312 Address after: Room 1710, building 1, No. 599, Jianshe West Road, Binhu District, Wuxi City, Jiangsu Province Applicant after: Wuxi LIPUS Semiconductor Co.,Ltd. Address before: No. 3-8-13tk Guannei plaza508, Nagasaki, Yokohama, Kanagawa, Japan Applicant before: Nsolution Co.,Ltd. |
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SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A packaging method and structure for power semiconductor modules Granted publication date: 20240126 Pledgee: Agricultural Bank of China Limited Wuxi Liangxi sub branch Pledgor: Wuxi LIPUS Semiconductor Co.,Ltd. Registration number: Y2024980031788 |