JP4383257B2 - 回路装置およびその製造方法 - Google Patents
回路装置およびその製造方法 Download PDFInfo
- Publication number
- JP4383257B2 JP4383257B2 JP2004162654A JP2004162654A JP4383257B2 JP 4383257 B2 JP4383257 B2 JP 4383257B2 JP 2004162654 A JP2004162654 A JP 2004162654A JP 2004162654 A JP2004162654 A JP 2004162654A JP 4383257 B2 JP4383257 B2 JP 4383257B2
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- Prior art keywords
- insulating layer
- conductive pattern
- filler
- circuit device
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- Prior art date
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Description
11 リード
12 封止樹脂
14 回路素子
15 金属細線
16 回路基板
17A 第1の絶縁層
17B 第2の絶縁層
18A 第1の導電パターン
18B 第2の導電パターン
Claims (8)
- 基板と、前記基板の表面に形成された第1の絶縁層と、前記第1の絶縁層の表面に形成された第1の導電パターンと、前記第1の導電パターンを被覆する第2の絶縁層と、前記第2の絶縁層上に形成され、前記第1の導電パターンと電気的に接続された第2の導電パターンを有する回路基板と、
前記第2の導電パターンと電気的に接続され、前記回路基板の上層に固着された半導体素子とを具備し、
前記第1の導電パターンと前記第2の導電パターンとの接続部に相当する所の前記第2の絶縁層には、レーザにより加工された貫通孔が設けられ、前記貫通孔にメッキにより形成された導電材を通じで前記第1の導電パターンと前記第2の導電パターンが電気的に接続され、
前記第2の絶縁層のフィラーの充填率は、前記第1の絶縁層のフィラーの充填率よりも少なく、
前記第2の絶縁層のフィラーの粒径分布は、前記第1の絶縁層のフィラーの粒径分布の幅よりも狭く、粒径が小さい方にシフトし、
前記第1の絶縁層のフィラーの充填率は、前記第2の絶縁層のフィラーの充填率よりも大きく、
前記第1の絶縁層のフィラーの粒径分布の幅は、前記第2の絶縁層のフィラーの粒径分布の幅よりも広い事を特徴とする回路装置。 - 前記接続部に相当する前記第1の導電パターンは、厚み方向において上に突出した第1の凸部を有し、
前記第1の凸部の上面が露出するように前記貫通孔が設けられる請求項1に記載の回路装置。 - 前記第2の絶縁層上の導電材料から成るアイランドには、前記半導体素子が固着され、前記アイランドの下層に位置する前記第2の絶縁層には、金属が充填されたサーマルビアが設けられる請求項1または請求項2に記載の回路装置。
- 前記回路基板は、金属またはセラミックから成る請求項1、請求項2または請求項3に記載の回路装置。
- 前記金属の材料は、Al、CuまたはFeから成る請求項4に記載の回路装置。
- 前記セラミックの材料は、酸化アルミニウムまたは窒化アルミニウムから成る請求項4に記載の回路装置。
- 基板と、前記基板の表面に形成された第1の絶縁層と、前記第1の絶縁層の表面に形成された第1の導電パターンと、前記第1の導電パターンを被覆する第2の絶縁層と、前記第2の絶縁層上に形成され、前記第1の導電パターンと電気的に接続された第2の導電パターンを有し、前記第2の絶縁層のフィラーの充填率は、前記第1のフィラーの充填率よりも少なく、且つ前記第2の絶縁層のフィラーの粒径分布は、前記第1の絶縁層のフィラーの粒径分布の幅よりも狭く、粒径が小さい方にシフトし、前記第1の絶縁層のフィラーの充填率は、前記第2の絶縁層のフィラーの充填率よりも大きく、且つ前記第1の絶縁層のフィラーの粒径分布の幅は、前記第2の絶縁層のフィラーの粒径分布の幅よりも広い回路基板を用意し、
前記第2の導電パターンと電気的に接続された半導体素子を前記回路基板の上層に固着する回路装置の製造方法に於いて、
前記第1の導電パターンと前記第2の導電パターンとの接続部に相当する所の前記第2の絶縁層は、レーザが照射されて貫通孔が形成され、
前記第2の導電パターン表面と前記貫通孔にメッキ処理を施し、前記貫通孔には、前記第2の導電パターンに形成されたメッキ材と同一のメッキ材が、前記第1の導電パターンと前記第2の導電パターンを接続する様に充填される事を特徴とした回路装置の製造方法。 - 前記貫通孔の内壁は、前記第2の絶縁層に充填されたフィラーが取れた凹部を有し、前記凹部に前記メッキ材が成長する請求項7に記載の回路装置の製造方法。
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JP2004162654A JP4383257B2 (ja) | 2004-05-31 | 2004-05-31 | 回路装置およびその製造方法 |
TW94113212A TWI301680B (en) | 2004-05-31 | 2005-04-26 | Circuit device and manufacturing method thereof |
KR20050043633A KR100661946B1 (ko) | 2004-05-31 | 2005-05-24 | 회로 장치 및 그 제조 방법 |
US11/139,263 US7221049B2 (en) | 2004-05-31 | 2005-05-27 | Circuit device and manufacturing method thereof |
CNB2005100747148A CN100388469C (zh) | 2004-05-31 | 2005-05-31 | 电路装置及其制造方法 |
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US7829152B2 (en) * | 2006-10-05 | 2010-11-09 | Lam Research Corporation | Electroless plating method and apparatus |
JP4524454B2 (ja) * | 2004-11-19 | 2010-08-18 | ルネサスエレクトロニクス株式会社 | 電子装置およびその製造方法 |
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US7957158B2 (en) * | 2006-10-31 | 2011-06-07 | Sanyo Electric Co., Ltd. | Circuit device |
KR101011199B1 (ko) * | 2007-11-01 | 2011-01-26 | 파나소닉 주식회사 | 실장 구조체 |
JP2009117450A (ja) * | 2007-11-02 | 2009-05-28 | Rohm Co Ltd | モジュールおよびその製造方法 |
JP4538058B2 (ja) * | 2008-03-28 | 2010-09-08 | 株式会社東芝 | 集積半導体装置及び集積3次元半導体装置 |
JP5631607B2 (ja) * | 2009-08-21 | 2014-11-26 | 株式会社東芝 | マルチチップモジュール構造を有する高周波回路 |
JP2011100718A (ja) * | 2009-10-05 | 2011-05-19 | Yazaki Corp | コネクタ |
JP5563917B2 (ja) * | 2010-07-22 | 2014-07-30 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 回路装置及びその製造方法 |
US8643176B2 (en) * | 2011-07-27 | 2014-02-04 | Infineon Technologies Ag | Power semiconductor chip having two metal layers on one face |
US11437304B2 (en) | 2014-11-06 | 2022-09-06 | Semiconductor Components Industries, Llc | Substrate structures and methods of manufacture |
US9397017B2 (en) | 2014-11-06 | 2016-07-19 | Semiconductor Components Industries, Llc | Substrate structures and methods of manufacture |
US9408301B2 (en) | 2014-11-06 | 2016-08-02 | Semiconductor Components Industries, Llc | Substrate structures and methods of manufacture |
US10014237B2 (en) * | 2014-12-16 | 2018-07-03 | Kyocera Corporation | Circuit board having a heat dissipating sheet with varying metal grain size |
CN109920787B (zh) * | 2017-12-12 | 2021-05-25 | 中芯国际集成电路制造(北京)有限公司 | 互连结构的设计方法、装置及制造方法 |
JP6813728B2 (ja) * | 2018-06-25 | 2021-01-13 | 無錫利普思半導体有限公司 | パワー半導体モジュール用パッケージの製造方法およびパワー半導体モジュール用パッケージ |
WO2020022109A1 (ja) * | 2018-07-25 | 2020-01-30 | 株式会社村田製作所 | 複合基板及び複合基板の製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2698278B2 (ja) | 1992-01-31 | 1998-01-19 | 三洋電機株式会社 | 混成集積回路装置 |
US5847464A (en) * | 1995-09-27 | 1998-12-08 | Sgs-Thomson Microelectronics, Inc. | Method for forming controlled voids in interlevel dielectric |
EP1049364A4 (en) * | 1998-11-18 | 2004-06-09 | Daiwa Kk | METHOD FOR PRODUCING CONNECTION TABLES |
US6233817B1 (en) * | 1999-01-17 | 2001-05-22 | Delphi Technologies, Inc. | Method of forming thick-film hybrid circuit on a metal circuit board |
US6538210B2 (en) * | 1999-12-20 | 2003-03-25 | Matsushita Electric Industrial Co., Ltd. | Circuit component built-in module, radio device having the same, and method for producing the same |
TW511422B (en) * | 2000-10-02 | 2002-11-21 | Sanyo Electric Co | Method for manufacturing circuit device |
JP2004186422A (ja) * | 2002-12-03 | 2004-07-02 | Shinko Electric Ind Co Ltd | 電子部品実装構造及びその製造方法 |
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2004
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US20050263880A1 (en) | 2005-12-01 |
KR20060049443A (ko) | 2006-05-19 |
KR100661946B1 (ko) | 2006-12-28 |
TW200541125A (en) | 2005-12-16 |
US7221049B2 (en) | 2007-05-22 |
CN1705105A (zh) | 2005-12-07 |
CN100388469C (zh) | 2008-05-14 |
JP2005347355A (ja) | 2005-12-15 |
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