WO2021196291A1 - 一种半导体芯片的溅镀方法 - Google Patents

一种半导体芯片的溅镀方法 Download PDF

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Publication number
WO2021196291A1
WO2021196291A1 PCT/CN2020/084906 CN2020084906W WO2021196291A1 WO 2021196291 A1 WO2021196291 A1 WO 2021196291A1 CN 2020084906 W CN2020084906 W CN 2020084906W WO 2021196291 A1 WO2021196291 A1 WO 2021196291A1
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Prior art keywords
semiconductor chip
frame
sputtering
base
middle frame
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PCT/CN2020/084906
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English (en)
French (fr)
Inventor
蒋海兵
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深圳市海铭德科技有限公司
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Publication of WO2021196291A1 publication Critical patent/WO2021196291A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67333—Trays for chips

Definitions

  • the present invention relates to the technical field of semiconductor chip sputtering, in particular to a semiconductor chip sputtering method.
  • the existing technology is generally only suitable for conventional semiconductor chips.
  • the shape of the semiconductor chip is regular, and the shape of the sputtering area is usually a whole surface.
  • the shape is not the same.
  • the same side has both sputtering areas and non-sputtering areas (protected areas) that need to be protected.
  • the existing technology cannot handle semiconductor chips with irregular shapes and selective area sputtering.
  • the technical solution adopted by the present invention is: a method for sputtering a semiconductor chip, including the following steps:
  • the base is provided with a plurality of through holes, and the plastic frame is attached between the plurality of through holes to form the frame opening; in the step H, the semiconductor chip is inserted from the through hole through a thimble The semiconductor chip is ejected.
  • step H while the ejector pin pushes out the semiconductor chip, the semiconductor chip is simultaneously sucked from the side of the semiconductor chip facing the ejector pin through a vacuum chuck.
  • the integral plastic frame covers the plastic frame on the base.
  • the four corners of the side of the semiconductor chip facing away from the base are provided with grooves, the protection area is located in the groove, and the covering glue is attached to the groove in the step E And flatten the convex body in the middle of the semiconductor chip by flattening.
  • step B the height of the middle frame is flush with the bottom of the groove, so that adjacent grooves are connected to form a large groove, and the covering glue is matched with the large groove .
  • the covering glue is adapted to the large groove formed between the adjacent grooves, and the covering glue has a shape suitable for the middle frame in the large groove Equipped with avoidance slots.
  • the middle frame on both sides of the semiconductor chip is provided with notches.
  • the beneficial effects of the present invention are that the semiconductor chip is fixed by the cooperation of the base, the plastic frame and the middle frame, and the protective area is covered by the masking glue, which can protect the non-sputtering area and avoid the appearance of NG products; the middle frame can avoid the connection of the plastic frame and the masking glue Too close makes it inconvenient to remove, it is convenient to separate and tear the glue, and it is convenient to remove the whole piece of double-sided tape from the base at one time, and it can also facilitate the clamping and removal of the semiconductor chip, and isolate the non-standard side of the semiconductor chip.
  • the sputtering area can also reduce the cost, and the middle frame can be replaced according to different models and different shapes of semiconductor chips.
  • FIG. 1 is a schematic diagram of a process flow of a sputtering method for a semiconductor chip according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram of a process flow of another method of a sputtering method for a semiconductor chip according to an embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of a sputtering method for a semiconductor chip according to an embodiment of the present invention.
  • FIG. 4 is an exploded structure diagram of a base, a plastic frame, a middle frame, a semiconductor chip, and a masking glue of a semiconductor chip sputtering method according to an embodiment of the present invention
  • FIG. 5 is a schematic structural diagram of a base of a semiconductor chip sputtering method according to an embodiment of the present invention.
  • FIG. 6 is a schematic diagram of the structure of a base, a plastic frame, a middle frame, a semiconductor chip, and a covering glue of a semiconductor chip sputtering method according to an embodiment of the present invention
  • FIG. 7 is a schematic structural diagram of a middle frame pressing plate of a method for sputtering a semiconductor chip according to an embodiment of the present invention.
  • FIG. 8 is a schematic structural diagram of an outer pressure plate of a method for sputtering a semiconductor chip according to an embodiment of the present invention.
  • Third air hole 400, semiconductor chip; 410, groove; 411, large groove; 420, convex body;
  • a method for sputtering a semiconductor chip 400 including the following steps:
  • the middle frame 300 attaches to the side of the plastic frame 200 that faces away from the base 100.
  • the frame hole 310 of the middle frame 300 fits the semiconductor chip 400 and is larger than the frame opening 210, so that a frame hole 310 of the middle frame 300 is exposed.
  • the semiconductor chip 400 is fixed by the cooperation of the base 100, the plastic frame 200 and the middle frame 300, and the protective area is covered by the masking glue 500, which can protect the non-sputtering area and avoid NG products; the middle frame 300 can avoid the plastic frame 200 and the masking glue 500
  • the connection is too tight and it is inconvenient to take out. It is convenient to separate and tear the glue, and it is convenient to remove the whole piece of double-sided tape from the base 100 at one time, and it can also facilitate the clamping and removal of the semiconductor chip 400 to isolate the semiconductor.
  • the non-sputtering area on the side of the chip 400 can also reduce the cost, and the middle frame 300 can be replaced according to the semiconductor chip 400 of different models and shapes.
  • the tearing-off masking glue 500 can be manually torn off by hand, or can be torn off by automated equipment. Simply, the masking glue 500 can also be double-sided tape.
  • the removal of the semiconductor chip 400 from the base 100 is generally carried out by automated equipment, and manual removal may also be selected, but cleanliness must be ensured.
  • the base 100 is provided with a plurality of through holes 110, and the plastic frame 200 is attached between the plurality of through holes 110 to form a frame opening 210; in step H, the semiconductor chip 400 is ejected from the through hole 110 through the ejector pin 600. It is convenient to take out the semiconductor chip 400, and avoid to tear the double-sided tape horizontally and affect other semiconductor chips 400 when taking out.
  • step H the ejector pin 600 ejects the semiconductor chip 400 while simultaneously sucking the semiconductor chip 400 from the side of the semiconductor chip 400 facing the ejector pin 600 through the vacuum chuck 700.
  • the stable removal of the semiconductor chip 400 can be ensured, and unnecessary collisions with the base, the middle frame 300, etc., of the semiconductor chip 400 can be avoided.
  • the needle 610 where the thimble 600 is in contact with the semiconductor chip 400 is made of a flexible material, generally rubber or silica gel.
  • FIG. 3 Please refer to Figure 3 to Figure 7, there are multiple frame mouth 210 arrays.
  • the frame opening 210 is arranged in an array. It can be understood that the semiconductor chips 400 are arranged in the same array, which facilitates the work of the automation equipment, and facilitates the clamping, sputtering, and removal of the semiconductor chips 400.
  • step A the integral plastic frame 200 is covered on the base 100. It is convenient to fit and tear off and has high efficiency.
  • the base 100 is provided with an exhaust groove 120, and the plastic frame 200 covers the exhaust groove 120.
  • a first air hole 130 is provided in the exhaust slot 120, the rubber frame 200 is provided with a second air hole 220 communicating with the first air hole 130, and the middle frame 300 is provided with a third air hole 330 communicating with the second air hole 220. Avoid bubbles and bulging when attaching the plastic frame 200, and it is convenient to keep it flat.
  • the four corners of the side of the semiconductor chip 400 facing away from the base 100 are provided with grooves 410, and the protection area is located in the groove 410.
  • the masking glue 500 is attached to the groove 410 and pressed
  • the convex body 420 in the middle of the semiconductor chip 400 is leveled.
  • the entire surface can be kept flat and convenient for sputtering.
  • the shapes of the four-corner grooves 410 are not necessarily the same, and they can be set according to actual needs.
  • the four grooves 410 can form a complete polygon when they are joined together.
  • the grooves 410 are symmetrically arranged and the grooves 410 on the same side are arranged symmetrically.
  • the length and width of the grooves 410 are the same.
  • the widths of the four grooves 410 are the same.
  • the convex body 420 is approximately cross-shaped.
  • step B the height of the middle frame 300 is flush with the bottom of the groove 410, so that adjacent grooves 410 are connected to form a large groove 411, and the covering glue 500 matches the large groove 411 .
  • the covering glue 500 is adapted to the large groove 411 formed between the adjacent grooves 410, and the covering glue 500 has an escape groove adapted to the middle frame 300 in the large groove 411. It is convenient to ensure that the entire side facing away from the base is flat and convenient for sputtering.
  • the middle frame 300 on both sides of the semiconductor chip 400 is provided with notches 320. It is convenient to take out the semiconductor chip 400, and it is also convenient to separate the middle frame 300 from the plastic frame 200.
  • the plastic frame 200 made of a whole piece of double-sided tape is attached to the base 100, and a number of frame openings 210 are formed on the base 100; a number of through holes 110 are arranged in an array on the base 100, and the through holes 110 are crisscrossed.
  • a number of exhaust slots 120 are provided, and a first air hole 130 is provided at the intersection of the exhaust slots 120; Two stomata 220;
  • the middle frame 300 Fits the middle frame 300 to the side of the plastic frame 200 that faces away from the base 100.
  • the height of the middle frame 300 is flush with the bottom of the groove 410 of the semiconductor chip 400, so that the adjacent grooves 410 are connected to form a large recess.
  • Slot 411, the frame hole 310 of the middle frame 300 fits the semiconductor chip 400 and is larger than the frame opening 210, so that a ring of plastic frame 200 is exposed in the frame hole 310 of the middle frame 300;
  • the middle frame 300 is provided with a first air hole 130
  • the third air hole 330 communicating with the second air hole 220, and the notch 320 which is arranged opposite to the two sides of the frame opening 210 for facilitating the removal of the semiconductor chip 400;
  • the middle frame pressing plate 800 uses the middle frame pressing plate 800 to flatten the middle frame 300;
  • the middle frame pressing plate 800 is provided with a rib 810 that avoids the semiconductor chip 400 and the masking glue 500 and is adapted to the middle frame 300;
  • a covering glue 500 is attached to the protective area in the groove 410 on the side of each semiconductor chip 400 facing away from the base 100, and pressed by the external pressing plate 900 for flattening, so that the covering glue 500 is flush with the middle of the semiconductor chip 400
  • the convex body 420; the outer pressure plate 900 is provided with a fourth air hole 910 communicating with the first air hole 130, the second air hole 220 and the third air hole 330;
  • the vacuum chuck 700 sucks the semiconductor chip 400 from the other side of the base 100, and simultaneously combines the top and bottom to take out the semiconductor chip 400 from the base 100;
  • the sputtering method for semiconductor chips fixes the semiconductor chip through the cooperation of the base, the plastic frame and the middle frame, and the protective area is covered by the masking glue, which can protect the non-sputtering area and avoid the appearance of NG products.
  • the middle frame can avoid the inconvenience of taking out the plastic frame and the cover glue because of the tight connection, and it is convenient to separate and tear the glue, and it can be convenient to remove the whole piece of double-sided tape from the base at one time, and it can also facilitate the semiconductor chip Clamping and taking out can isolate the non-sputtering area on the side of the semiconductor chip, which can also reduce the cost.
  • the middle frame can be replaced according to different types and different shapes of semiconductor chips.

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Abstract

一种半导体芯片（400）的溅镀方法，通过底座（100）、胶框（200）和中框（300）的配合固定半导体芯片（400），通过遮盖胶（500）遮蔽保护区域，可以保护非溅镀区域，避免出现NG产品；中框（300）可以避免胶框（200）与遮盖胶（500）连接过于紧密导致取出不便，方便分开撕胶，并且可以方便一次性将整块的双面胶制成的胶框（200）从底座（100）撕除，还能够方便半导体芯片（400）的装夹和取出，隔离半导体芯片（400）侧面的非溅镀区域，还能减少成本，可以根据不同型号、不同形状的半导体芯片（400）更换中框（300）。

Description

一种半导体芯片的溅镀方法 技术领域
本发明涉及半导体芯片溅镀技术领域，尤其涉及一种半导体芯片的溅镀方法。
 背景技术
对于半导体芯片的溅镀工艺，现有的技术一般只适合常规的半导体芯片，半导体芯片的形状是规则的，溅镀区域的形状通常是一整个面，而随着技术的发展，出现了形状不规则，同一侧的一面既有溅镀区域又有需要保护的非溅镀区域（保护区域），现有的技术对于异形形状和需要选择性区域溅镀的半导体芯片无法进行很好的处理，工艺复杂，加工麻烦，NG率高。
 技术问题
在此处键入技术问题描述段落。
 技术解决方案
鉴于上述状况，有必要提供提出一种适合异形形状、需要选择性区域溅镀的半导体芯片的溅镀方法。
为了解决上述技术问题，本发明采用的技术方案为：一种半导体芯片的溅镀方法，包括以下步骤：
A、   将双面胶制成的胶框贴合在底座上，在所述底座上形成若干框口；
B、   将中框贴合在所述胶框背向底座的一面，所述中框的框孔与半导体芯片相适配并大于所述框口，使所述中框的框孔内露出一圈双面胶；
C、   将所述中框压平整；
D、   将半导体芯片贴合在所述中框的框孔内；
E、   在每个半导体芯片的背向所述底座的一面的保护区域贴合遮盖胶，并压平整；
F、   进行溅镀。
进一步的，还包括以下步骤：
G、   撕除遮盖胶；
H、   将所述半导体芯片从底座内取出；
I、    将所述半导体芯片装入物料盘。
进一步的，所述底座设有若干通孔，所述胶框贴合在若干所述通孔之间形成所述框口；所述步骤H中所述半导体芯片通过顶针从所述通孔内将所述半导体芯片顶出。
进一步的，所述步骤H中顶针顶出所述半导体芯片的同时通过真空吸盘从所述半导体芯片背向所述顶针的一面同步吸取所述半导体芯片。
进一步的，所述框口阵列设置有多个。
进一步的，所述步骤A中呈整块的所述胶框覆盖在所述底座上所述胶框。
进一步的，所述半导体芯片背向所述底座的一面的的四角设有凹槽，所述保护区域位于所述凹槽内，所述步骤E中所述遮盖胶贴合在所述凹槽内并通过压平整平齐所述半导体芯片的中部的凸体。
进一步的，步骤B中，所述中框的高度与所述凹槽的底部相平齐，使相邻的凹槽连接形成一大凹槽，所述遮盖胶与所述大凹槽相适配。
进一步的，所述步骤B中，所述遮盖胶与相邻所述凹槽之间形成的大凹槽相适配，所述遮盖胶具有与所述大凹槽内的所述中框相适配的避位槽。
进一步的，所述半导体芯片两侧的所述中框上设有缺槽。
 有益效果
本发明的有益效果在于：通过底座、胶框和中框的配合固定半导体芯片，通过遮盖胶遮蔽保护区域，可以保护非溅镀区域，避免出现NG产品；中框可以避免胶框与遮盖胶连接过于紧密导致取出不便，方便分开撕胶，并且可以方便一次性将整块的双面胶制成的胶框从底座撕除，还能够方便半导体芯片的装夹和取出，隔离半导体芯片侧面的非溅镀区域，还能减少成本，可以根据不同型号、不同形状的半导体芯片更换中框。
 附图说明
图1是本发明实施例一种半导体芯片的溅镀方法的工艺流程示意图；
图2是本发明实施例一种半导体芯片的溅镀方法的另一方式的工艺流程示意图；
图3是本发明实施例一种半导体芯片的溅镀方法的结构示意图；
图4是本发明实施例一种半导体芯片的溅镀方法的底座、胶框、中框、半导体芯片和遮盖胶的爆炸结构示意图；
图5是本发明实施例一种半导体芯片的溅镀方法的底座的结构示意图；
图6是本发明实施例一种半导体芯片的溅镀方法的底座、胶框、中框、半导体芯片和遮盖胶的结构示意图；
图7是本发明实施例一种半导体芯片的溅镀方法的中框压板的结构示意图；
图8是本发明实施例一种半导体芯片的溅镀方法的外压板的结构示意图；
标号说明：
100、底座；110、通孔；120、排气槽；130、第一气孔；200、胶框；
210、框口；220、第二气孔；300、中框；310、框孔；320、缺槽；
330、第三气孔；400、半导体芯片；410、凹槽；411、大凹槽；420、凸体；
500、遮盖胶；600、顶针；610、针头；700、真空吸盘；800、中框压板；
810、凸筋；900、外压板；910、第四气孔。
 本发明的最佳实施方式
在此处键入本发明的最佳实施方式描述段落。
 本发明的实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明一种半导体芯片的溅镀方法进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。
请参见图1-图8，一种半导体芯片400的溅镀方法，包括以下步骤：
A、   将双面胶制成的胶框200贴合在底座100上，在底座100上形成若干框口210；
B、   将中框300贴合在胶框200背向底座100的一面，中框300的框孔310与半导体芯片400相适配并大于框口210，使中框300的框孔310内露出一圈双面胶；
C、   将中框300压平整；
D、   将半导体芯片400贴合在中框300的框孔310内；
E、   在每个半导体芯片400的背向底座100的一面的保护区域贴合遮盖胶500，并压平整；
F、   进行溅镀。
通过底座100、胶框200和中框300的配合固定半导体芯片400，通过遮盖胶500遮蔽保护区域，可以保护非溅镀区域，避免出现NG产品；中框300可以避免胶框200与遮盖胶500连接过于紧密导致取出不便，方便分开撕胶，并且可以方便一次性将整块的双面胶制成的胶框200从底座100撕除，还能够方便半导体芯片400的装夹和取出，隔离半导体芯片400侧面的非溅镀区域，还能减少成本，可以根据不同型号、不同形状的半导体芯片400更换中框300。
进一步的，还包括以下步骤：
G、   撕除遮盖胶500；
H、   将半导体芯片400从底座100内取出；
I、    将半导体芯片400装入物料盘。
撕除遮盖胶500可以采用人工手工撕除，也可以采用自动化设备进行撕除。简单的，遮盖胶500同样可以采用双面胶。
将半导体芯片400从底座100内取出一般采用自动化设备进行，也可以选择人工取出，但是需要保证清洁。特别的，底座100设有若干通孔110，胶框200贴合在若干通孔110之间形成框口210；步骤H中半导体芯片400通过顶针600从通孔110内将半导体芯片400顶出。方便半导体芯片400的取出，避免取出时水平向撕扯双面胶影响其它的半导体芯片400。
请参见图3，步骤H中顶针600顶出半导体芯片400的同时通过真空吸盘700从半导体芯片400背向顶针600的一面同步吸取半导体芯片400。可以保证半导体芯片400的稳定取出，避免将半导体芯片400顶飞或者与底座、中框300等发生不必要的碰撞。顶针600与半导体芯片400接触的针头610由柔性材料制成，一般采用橡胶或者硅胶。
请惨图3-图7，框口210阵列设置有多个。框口210阵列设置，可以理解的，半导体芯片400同样的阵列排布，方便自动化设备的工作，方便装夹、溅镀和取出半导体芯片400。
请参见图4，步骤A中呈整块的胶框200覆盖在底座100上。贴合和撕除方便，效率高。
请参见图4和图5，底座100上设有排气槽120，胶框200覆盖在排气槽120上。在排气槽120内设有贯通的第一气孔130，胶框200设有与第一气孔130相通的第二气孔220，中框300设有与第二气孔220相通的第三气孔330。避免贴合胶框200时出现气泡、鼓起，方便保持平整。
请参见图3和图4，半导体芯片400背向底座100的一面的的四角设有凹槽410，保护区域位于凹槽410内，步骤E中遮盖胶500贴合在凹槽410内并通过压平整平齐半导体芯片400的中部的凸体420。使得整个表面可以保持平整，方便溅镀。可以理解的，四角的凹槽410形状不一定相同，具体根据需要设置，特别的，四个凹槽410相拼接时可以形成一个完整的多边形，特别的，凹槽410对称设置并且同一侧的凹槽410长度宽度相同，特别的，四个凹槽410的宽度均相同。可以理解的，凸体420近似十字形装。
请参见图3，步骤B中，中框300的高度与凹槽410的底部相平齐，使相邻的凹槽410连接形成一大凹槽411，遮盖胶500与大凹槽411相适配。或者，步骤B中，遮盖胶500与相邻凹槽410之间形成的大凹槽411相适配，遮盖胶500具有与大凹槽411内的中框300相适配的避位槽。方便保证整个背向底座的一面的平整，方便溅镀。
特别的，半导体芯片400两侧的中框300上设有缺槽320。方便半导体芯片400的取出，也方便中框300与胶框200分离。
实施例一
请参见图1-图8，
A、   将整块双面胶制成的胶框200贴合在底座100上，在底座100上形成若干框口210；底座100上阵列设有若干通孔110，在通孔110之间纵横交错设有若干排气槽120，在排气槽120的交汇处设有第一气孔130；胶框200上设有若干环绕通孔110的框口210，并设有与第一气孔130相通的第二气孔220；
B、将中框300贴合在胶框200背向底座100的一面，中框300的高度与半导体芯片400的凹槽410的底部相平齐，使相邻的凹槽410连接形成一大凹槽411，中框300的框孔310与半导体芯片400相适配并大于框口210，使中框300的框孔310内露出一圈胶框200；中框300上设有与第一气孔130和第二气孔220相通的第三气孔330，以及方便半导体芯片400取出的、在框口210的两侧相对设置的缺槽320；
C、   利用中框压板800将中框300压平整；中框压板800设有避开半导体芯片400和遮盖胶500、与中框300相适配的凸筋810；
D、   将半导体芯片400贴合在中框300的框孔310内；一般采用真空吸爪进行贴覆，配合CCD相机进行定位；
E、 在每个半导体芯片400的背向底座100的一面的凹槽410内的保护区域贴合遮盖胶500，并通过外压板900压进行压平整，使遮盖胶500平齐半导体芯片400的中部的凸体420；外压板900设有与第一气孔130、第二气孔220和第三气孔330相通的第四气孔910；
F、   进行溅镀；
G、   撕除遮盖胶500；
H、   顶针600从通孔110抵持半导体芯片400的同时真空吸盘700从背向底座100的另一面吸取半导体芯片400，上下同步结合将半导体芯片400从底座100内取出；
I、    将半导体芯片400装入物料盘。
 工业实用性
综上所述，本发明提供的一种半导体芯片的溅镀方法，通过底座、胶框和中框的配合固定半导体芯片，通过遮盖胶遮蔽保护区域，可以保护非溅镀区域，避免出现NG产品；中框可以避免胶框与遮盖胶连接过于紧密导致取出不便，方便分开撕胶，并且可以方便一次性将整块的双面胶制成的胶框从底座撕除，还能够方便半导体芯片的装夹和取出，隔离半导体芯片侧面的非溅镀区域，还能减少成本，可以根据不同型号、不同形状的半导体芯片更换中框。
 序列表自由内容
以上所述，仅是本发明的较佳实施例而已，并非对本发明作任何形式上的限制，虽然本发明已以较佳实施例揭露如上，然而并非用以限定本发明，任何熟悉本专业的技术人员，在不脱离本发明技术方案范围内，当可利用上述揭示的技术内容做出些许更动或修饰为等同变化的等效实施例，但凡是未脱离本发明技术方案内容，依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰，均仍属于本发明技术方案的范围内。

Claims (10)

  1. 一种半导体芯片的溅镀方法，其特征在于，包括以下步骤：
    A、    将双面胶制成的胶框贴合在底座上，在所述底座上形成若干框口；
    B、    将中框贴合在所述胶框背向底座的一面，所述中框的框孔与半导体芯片相适配并大于所述框口，使所述中框的框孔内露出一圈双面胶；
    C、    将所述中框压平整；
    D、    将半导体芯片贴合在所述中框的框孔内；
    E、    在每个半导体芯片的背向所述底座的一面的保护区域贴合遮盖胶，并压平整；
    F、    进行溅镀。
  2. 根据权利要求1所述的一种半导体芯片的溅镀方法，其特征在于，还包括以下步骤：
    G、    撕除遮盖胶；
    H、    将所述半导体芯片从底座内取出；
    I、    将所述半导体芯片装入物料盘。
  3. 根据权利要求1或2所述的一种半导体芯片的溅镀方法，其特征在于，所述底座设有若干通孔，所述胶框贴合在若干所述通孔之间形成所述框口；所述步骤H中所述半导体芯片通过顶针从所述通孔内将所述半导体芯片顶出。
  4. 根据权利要求3所述的一种半导体芯片的溅镀方法，其特征在于，所述步骤H中顶针顶出所述半导体芯片的同时通过真空吸盘从所述半导体芯片背向所述顶针的一面同步吸取所述半导体芯片。
  5. 根据权利要求1或2所述的一种半导体芯片的溅镀方法，其特征在于，所述框口阵列设置有多个。
  6. 根据权利要求1或2所述的一种半导体芯片的溅镀方法，其特征在于，所述步骤A中所述胶框呈整块的所述胶框盖在所述底座上。
  7. 根据权利要求1或2所述的一种半导体芯片的溅镀方法，其特征在于，所述半导体芯片背向所述底座的一面的的四角设有凹槽，所述保护区域位于所述凹槽内，所述步骤E中所述遮盖胶贴合在所述凹槽内并通过压平整平齐所述半导体芯片的中部的凸体。
  8. 根据权利要求7所述的一种半导体芯片的溅镀方法，其特征在于，所述步骤B中，所述中框的高度与所述凹槽的底部相平齐，使相邻的凹槽连接形成一大凹槽，所述遮盖胶与所述大凹槽相适配。
  9. 根据权利要求7所述的一种半导体芯片的溅镀方法，其特征在于，所述步骤B中，所述遮盖胶与相邻所述凹槽之间形成的大凹槽相适配，所述遮盖胶具有与所述大凹槽内的所述中框相适配的避位槽。
  10. 根据权利要求1或2所述的一种半导体芯片的溅镀方法，其特征在于，所述半导体芯片两侧的所述中框上设有缺槽。
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