WO2021193514A1 - 半導体基板の洗浄方法、加工された半導体基板の製造方法及び剥離用組成物 - Google Patents
半導体基板の洗浄方法、加工された半導体基板の製造方法及び剥離用組成物 Download PDFInfo
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- WO2021193514A1 WO2021193514A1 PCT/JP2021/011673 JP2021011673W WO2021193514A1 WO 2021193514 A1 WO2021193514 A1 WO 2021193514A1 JP 2021011673 W JP2021011673 W JP 2021011673W WO 2021193514 A1 WO2021193514 A1 WO 2021193514A1
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- 235000001510 limonene Nutrition 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- WSGCRAOTEDLMFQ-UHFFFAOYSA-N nonan-5-one Chemical compound CCCCC(=O)CCCC WSGCRAOTEDLMFQ-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229930004008 p-menthane Natural products 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000003880 polar aprotic solvent Substances 0.000 description 1
- 125000001844 prenyl group Chemical group [H]C([*])([H])C([H])=C(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/24—Hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5027—Hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Definitions
- the present invention relates to a method for cleaning a semiconductor substrate, a method for producing a processed semiconductor substrate, and a composition for peeling.
- semiconductor wafers that have been integrated in a two-dimensional plane direction are required to have a semiconductor integration technology in which planes are further integrated (laminated) in a three-dimensional direction for the purpose of further integration.
- This three-dimensional lamination is a technique for integrating in multiple layers while connecting with a through silicon via (TSV: through silicon via).
- TSV through silicon via
- the unthinned semiconductor wafer (also simply referred to as a wafer here) is adhered to the support for polishing with a polishing device.
- the adhesion at that time is called temporary adhesion because it must be easily peeled off after polishing.
- This temporary bond must be easily removed from the support, and the thinned semiconductor wafer may be cut or deformed when a large force is applied to the removal so that such a situation does not occur. Easy to remove.
- the temperature may reach a high temperature of 150 ° C. or higher in the processing process, and heat resistance is also required.
- polysiloxane-based adhesives capable of having these performances are mainly used as temporary adhesives.
- adhesive residue often remains on the surface of the substrate after the thinned substrate is peeled off, but in order to avoid problems in the subsequent steps.
- a cleaning agent composition for removing this residue and cleaning the surface of a semiconductor substrate has been developed (for example, Patent Documents 1 and 2).
- Patent Document 1 discloses a siloxane resin remover containing a polar aprotic solvent and a quaternary ammonium hydroxide
- Patent Document 2 discloses a cured resin remover containing alkyl-ammonium fluoride. Has been done.
- Patent Document 1 discloses a siloxane resin remover containing a polar aprotic solvent and a quaternary ammonium hydroxide
- Patent Document 2 discloses a cured resin remover containing alkyl-ammonium fluoride.
- Patent Document 2 discloses a cured resin remover containing alkyl-ammonium fluoride.
- a semiconductor wafer is electrically connected to a semiconductor chip via, for example, a bump ball made of a conductive material of metal, and by using a chip provided with such a bump ball, the semiconductor packaging can be miniaturized. It is planned.
- bump balls from metals such as copper and tin have poor corrosion resistance, there is a problem that they are damaged by a cleaning agent composition for removing adhesive residues on a support or a wafer (Patent Documents). 3)
- One of the items required for the cleaning agent composition and the cleaning method is that the bump balls are not corroded when cleaning the substrate.
- the present invention has been made in view of the above circumstances, for example, from a semiconductor substrate having an adhesive layer obtained by using a siloxane-based adhesive on its surface, while reducing or suppressing damage to bumps of the semiconductor substrate.
- a method for cleaning a semiconductor substrate for suitably and easily removing an adhesive layer a method for producing a processed semiconductor substrate including such a cleaning method, and a peeling composition used for such a cleaning method. The purpose is.
- the present inventors obtained an adhesive layer on a semiconductor substrate from a siloxane-based adhesive containing a polyorganosiloxane component (A) that is particularly cured by a hydrosilylation reaction.
- a siloxane-based adhesive containing a polyorganosiloxane component (A) that is particularly cured by a hydrosilylation reaction.
- the present invention 1.
- a method for cleaning a semiconductor substrate which comprises a step of peeling the adhesive layer on the semiconductor substrate with a peeling composition.
- the peeling composition contains a solvent and does not contain a salt.
- a method for cleaning a semiconductor substrate wherein the solvent is composed of a linear aliphatic saturated hydrocarbon compound having 8 to 10 carbon atoms.
- the linear aliphatic saturated hydrocarbon compound having 8 to 10 carbon atoms is at least one selected from n-octane, n-nonane and n-decane. 3. 3. 3.
- the adhesive layer contains at least one selected from a siloxane-based adhesive, an acrylic resin-based adhesive, an epoxy resin-based adhesive, a polyamide-based adhesive, a polystyrene-based adhesive, a polyimide adhesive, and a phenol-resin-based adhesive.
- a method for cleaning a semiconductor substrate of 1 or 2 which is a film obtained by using an adhesive composition containing an agent component (S). 4.
- 5. 4 A method for cleaning a semiconductor substrate according to 4, wherein the siloxane-based adhesive contains a polyorganosiloxane component (A) that is cured by a hydrosilylation reaction. 6.
- the peeling composition contains a solvent and does not contain a salt.
- the adhesive layer contains at least one selected from a siloxane-based adhesive, an acrylic resin-based adhesive, an epoxy resin-based adhesive, a polyamide-based adhesive, a polystyrene-based adhesive, a polyimide adhesive, and a phenol-resin-based adhesive.
- a method for producing an 8 or 9 processed semiconductor substrate which is a film obtained by using an adhesive composition containing an agent component (S).
- the adhesive component (S) contains a siloxane-based adhesive.
- the siloxane-based adhesive contains a polyorganosiloxane component (A) that is cured by a hydrosilylation reaction.
- a peeling composition used for peeling the adhesive layer on the semiconductor substrate when cleaning the semiconductor substrate Contains solvent, does not contain salt, A peeling composition, wherein the solvent is composed of a linear aliphatic saturated hydrocarbon compound having 8 to 10 carbon atoms. 16. Fifteen stripping compositions in which the linear aliphatic saturated hydrocarbon compound having 8 to 10 carbon atoms is at least one selected from n-octane, n-nonane and n-decane. 17.
- the adhesive layer contains at least one selected from a siloxane-based adhesive, an acrylic resin-based adhesive, an epoxy resin-based adhesive, a polyamide-based adhesive, a polystyrene-based adhesive, a polyimide adhesive, and a phenol-resin-based adhesive.
- a peeling composition of 15 or 16 which is a film obtained by using an adhesive composition containing an agent component (S). 18. 17 peeling compositions in which the adhesive component (S) contains a siloxane-based adhesive, 19. 18 peeling compositions containing a polyorganosiloxane component (A) in which the siloxane-based adhesive is cured by a hydrosilylation reaction.
- the adhesive composition comprises 19 release compositions containing the release agent component (B).
- the adhesive composition provides 20 peeling compositions containing the release agent component (B) in an amount of 25% by mass or more based on the adhesive component (S).
- the adhesive layer can be suitably and easily removed from a semiconductor substrate having an adhesive layer on its surface obtained by using a siloxane-based adhesive, and thus high efficiency is achieved. It can be expected that a good semiconductor element will be manufactured.
- the adhesive layer can be removed favorably and easily while avoiding or suppressing damage to the bumps, so that a semiconductor element having high efficiency, high reliability, and good quality can be removed. Can be expected to be manufactured.
- the method for cleaning a semiconductor substrate of the present invention includes a step of peeling an adhesive layer on a semiconductor substrate with a peeling composition, wherein the peeling composition contains a solvent, does not contain a salt, and the solvent is used. , It is composed of a linear aliphatic saturated hydrocarbon compound having 8 to 10 carbon atoms.
- the semiconductor substrate is, for example, a wafer, and specific examples thereof include, but are not limited to, a silicon wafer having a diameter of about 300 mm and a thickness of about 770 ⁇ m.
- the adhesive layer on such a semiconductor substrate is, for example, a film obtained from an adhesive composition containing an adhesive component (S).
- an adhesive component (S) is not particularly limited as long as it is used for this kind of application, and for example, a siloxane-based adhesive, an acrylic resin-based adhesive, an epoxy resin-based adhesive, and a polyamide. Examples thereof include based adhesives, polystyrene adhesives, polyimide adhesives, and phenol resin adhesives.
- a siloxane-based adhesive is used as the adhesive component (S) because it exhibits suitable adhesive ability during processing of wafers and the like, is suitably peelable after processing, and is also excellent in heat resistance. Is preferable.
- the adhesive composition used in the present invention contains the polyorganosiloxane component (A) cured by a hydrosilylation reaction as an adhesive component, and in a more preferred embodiment, the polyorgano cured by a hydrosilylation reaction.
- siloxane component (A) is a siloxane unit represented by SiO 2 (Q unit) siloxane units represented by R 1 R 2 R 3 SiO 1/2 (M units), in R 4 R 5 SiO 2/2
- Polysiloxane (A1) containing one or more units selected from the group consisting of the siloxane unit (D unit) represented and the siloxane unit (T unit) represented by R 6 SiO 3/2, and platinum.
- the polysiloxane (A1) is a siloxane unit represented by SiO 2 (Q 'units)
- R 1' is represented by R 2 'R 3' SiO 1/2 siloxane units (M 'units)
- R 4' consisting of R 5 'siloxane units (D represented by SiO 2/2' units) and R 6 'siloxane units represented by SiO 3/2 (T' units)
- Polyorganosiloxane (a1) containing one or more units selected from the group and at least one selected from the group consisting of the above M'units, D'units and T'units, and SiO 2 .
- siloxane unit (Q "unit), R 1 " R 2 "R 3 " SiO 1/2 siloxane unit (M “unit), R 4 " R 5 "SiO 2/2 It contains one or more units selected from the group consisting of a siloxane unit (D “unit) and a siloxane unit (T” unit represented by R 6 "SiO 3/2", and the above M "unit, D”.
- a polyorganosiloxane (a2) comprising at least one selected from the group consisting of "units and T" units.
- R 1 to R 6 are groups or atoms bonded to a silicon atom, and independently represent an alkyl group, an alkenyl group or a hydrogen atom.
- R 1 ' ⁇ R 6' is a group bonded to the silicon atoms, each independently, represent an alkyl group or an alkenyl group, at least one of R 1 ' ⁇ R 6' is an alkenyl group.
- R 1 "to R 6 " are groups or atoms bonded to a silicon atom and independently represent an alkyl group or a hydrogen atom, but at least one of R 1 "to R 6 " is a hydrogen atom. be.
- the alkyl group may be linear, branched or cyclic, but a linear or branched alkyl group is preferable, and the number of carbon atoms thereof is not particularly limited, but is usually 1 to 40. Yes, preferably 30 or less, more preferably 20 or less, even more preferably 10 or less.
- linear or branched alkyl group examples include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, an s-butyl group, and a t-butyl group.
- N-pentyl group 1-methyl-n-butyl group, 2-methyl-n-butyl group, 3-methyl-n-butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl- n-propyl group, 2,2-dimethyl-n-propyl group, 1-ethyl-n-propyl group, n-hexyl, 1-methyl-n-pentyl group, 2-methyl-n-pentyl group, 3-methyl -N-pentyl group, 4-methyl-n-pentyl group, 1,1-dimethyl-n-butyl group, 1,2-dimethyl-n-butyl group, 1,3-dimethyl-n-butyl group, 2, 2-Dimethyl-n-butyl group, 2,3-dimethyl-n-butyl group, 3,3-dimethyl-n-butyl group, 1-ethyl-n-butyl group, 2-ethyl-n-butyl group, 1-e
- cyclic alkyl group examples include cyclopropyl group, cyclobutyl group, 1-methyl-cyclopropyl group, 2-methyl-cyclopropyl group, cyclopentyl group, 1-methyl-cyclobutyl group, 2-methyl-cyclobutyl group, 3 -Methyl-cyclobutyl group, 1,2-dimethyl-cyclopropyl group, 2,3-dimethyl-cyclopropyl group, 1-ethyl-cyclopropyl group, 2-ethyl-cyclopropyl group, cyclohexyl group, 1-methyl-cyclopentyl Group, 2-methyl-cyclopentyl group, 3-methyl-cyclopentyl group, 1-ethyl-cyclobutyl group, 2-ethyl-cyclobutyl group, 3-ethyl-cyclobutyl group, 1,2-dimethyl-cyclobutyl group, 1,3- Dimethyl-cyclobutyl group, 2,2-dimethyl-cyclobut
- the alkenyl group may be in the form of a linear chain or a branched chain, and the number of carbon atoms thereof is not particularly limited, but is usually 2 to 40, preferably 30 or less, more preferably 20 or less, and further. It is preferably 10 or less.
- alkenyl group examples include ethenyl group, 1-propenyl group, 2-propenyl group, 1-methyl-1-ethenyl group, 1-butenyl group, 2-butenyl group, 3-butenyl group and 2-methyl-1.
- -Propenyl group 2-methyl-2-propenyl group, 1-ethylethenyl group, 1-methyl-1-propenyl group, 1-methyl-2-propenyl group, 1-pentenyl group, 2-pentenyl group, 3-pentenyl group , 4-Pentenyl group, 1-n-propylethenyl group, 1-methyl-1-butenyl group, 1-methyl-2-butenyl group, 1-methyl-3-butenyl group, 2-ethyl-2-propenyl group , 2-Methyl-1-butenyl group, 2-methyl-2-butenyl group, 2-methyl-3-butenyl group, 3-methyl-1-butenyl group, 3-methyl-2-butenyl group, 3-methyl-2-butenyl group, 3-methyl- 3-butenyl group, 1,1-dimethyl-2-propenyl group, 1-i-propylethenyl group, 1,2-dimethyl-1-propenyl group, 1,2-dimethyl-2-propenyl
- the polysiloxane (A1) contains the polyorganosiloxane (a1) and the polyorganosiloxane (a2), but is contained in the alkenyl group contained in the polyorganosiloxane (a1) and the polyorganosiloxane (a2).
- a hydrogen atom (Si—H group) forms a crosslinked structure by a hydrosilylation reaction with a platinum group metal-based catalyst (A2) and is cured.
- the polyorganosiloxane (a1) contains one or more units selected from the group consisting of Q'units, M'units, D'units and T'units, and the M'units, D'units and the above-mentioned M'units and D'units. It contains at least one selected from the group consisting of T'units.
- the polyorganosiloxane (a1) two or more types of polyorganosiloxane satisfying such conditions may be used in combination.
- Preferred combinations of two or more selected from the group consisting of Q'units, M'units, D'units and T'units are (Q'units and M'units), (D'units and M'units), (T'unit and M'unit), (Q'unit and T'unit and M'unit), but are not limited thereto.
- the polyorganosiloxane (a2) contains one or more units selected from the group consisting of Q “units, M” units, D “units and T” units, as well as the above M “units, D” units and It contains at least one selected from the group consisting of T "units.
- the polyorganosiloxane (a2) two or more polyorganosiloxanes satisfying such conditions may be used in combination.
- Preferred combinations of two or more selected from the group consisting of Q “units, M” units, D “units and T” units are (M “units and D” units), (Q “units and M” units), (Q “unit and T” unit and M “unit), but are not limited to these.
- Polyorganosiloxanes (a1) is one in which the alkyl group and / or alkenyl groups is composed of siloxane units bonded to the silicon atoms, alkenyl during all the substituents represented by R 1 ' ⁇ R 6' proportion of group is preferably 0.1 mol% to 50.0 mol%, more preferably from 0.5 mol% to 30.0 mol%, the remaining R 1 ' ⁇ R 6' is an alkyl group be able to.
- the polyorganosiloxane (a2) is composed of a siloxane unit in which an alkyl group and / or a hydrogen atom is bonded to the silicon atom, and all the substituents and substitutions represented by R 1 "to R 6".
- the proportion of hydrogen atoms in the atom is preferably 0.1 mol% to 50.0 mol%, more preferably 10.0 mol% to 40.0 mol%, and the remaining R 1 "to R 6 " are. It can be an alkyl group.
- the polysiloxane (A1) contains a polyorganosiloxane (a1) and a polyorganosiloxane (a2), but in a preferred embodiment, the alkenyl group and the polyorganosiloxane (a2) contained in the polyorganosiloxane (a1) are used.
- the molar ratio with the hydrogen atom constituting the included Si—H bond is in the range of 1.0: 0.5 to 1.0: 0.66.
- the weight average molecular weights of the polyorganosiloxane (a1) and the polyorganosiloxane (a2) are usually 500 to 1,000,000, respectively, but from the viewpoint of realizing the effects of the present invention with good reproducibility, 5, It is 000 to 50,000.
- the weight average molecular weight, the number average molecular weight, and the degree of dispersion in the present invention are, for example, GPC apparatus (EcoSEC, HLC-8320GPC manufactured by Tosoh Co., Ltd.) and GPC column (TSKgel SuperMultiporeHZ-N, TSKgel SuperMultihoreHZ-N, Tosoh Co., Ltd.).
- the column temperature is 40 ° C.
- tetrahydrofuran is used as the eluent (eluting solvent)
- the flow rate is 0.35 mL / min
- polystyrene manufactured by Sigma Aldrich is used as a standard sample for measurement. be able to.
- the viscosities of the polyorganosiloxane (a1) and the polyorganosiloxane (a2) are usually 10 to 10000 (mPa ⁇ s), respectively, but are preferably 50 to 10000 from the viewpoint of realizing the effects of the present invention with good reproducibility. (MPa ⁇ s).
- the viscosity in the present invention is a value measured with an E-type rotational viscometer at 25 ° C.
- Polyorganosiloxane (a1) and polyorganosiloxane (a2) react with each other by a hydrosilylation reaction to form a film. Therefore, the mechanism of curing is different from that via a silanol group, for example, and therefore any siloxane must contain a silanol group or a functional group that forms a silanol group by hydrolysis, such as an alkyloxy group. There is no.
- the adhesive component (S) contains a platinum group metal-based catalyst (A2) together with the polysiloxane (A1) described above.
- a platinum-based metal catalyst is a catalyst for promoting the hydrosilylation reaction between the alkenyl group of the polyorganosiloxane (a1) and the Si—H group of the polyorganosiloxane (a2).
- platinum-based metal catalyst examples include platinum black, second platinum chloride, platinum chloride acid, a reaction product of platinum chloride acid and a monovalent alcohol, a complex of platinum chloride acid and olefins, platinum bisacetoacetate, and the like. Platinum-based catalysts, but are not limited to these. Examples of the complex of platinum and olefins include, but are not limited to, a complex of divinyltetramethyldisiloxane and platinum.
- the amount of the platinum group metal catalyst (A2) is usually in the range of 1.0 to 50.0 ppm with respect to the total amount of the polyorganosiloxane (a1) and the polyorganosiloxane (a2).
- the polyorganosiloxane component (A) may contain a polymerization inhibitor (A3) for the purpose of suppressing the progress of the hydrosilylation reaction.
- the polymerization inhibitor is not particularly limited as long as it can suppress the progress of the hydrosilylation reaction, and specific examples thereof include 1-ethynyl-1-cyclohexanol and 1,1-diphenyl-2-propion-1-ol. Such as alkynyl alcohol and the like.
- the amount of the polymerization inhibitor is usually 1000.0 ppm or more with respect to the total amount of the polyorganosiloxane (a1) and the polyorganosiloxane (a2) from the viewpoint of obtaining the effect, and excessively suppresses the hydrosilylation reaction. From the viewpoint of prevention, it is 10000.0 ppm or less.
- the adhesive composition used in the present invention may contain a release agent component (B).
- a release agent component (B) By including such a release agent component (B) in the adhesive composition used in the present invention, the obtained adhesive layer can be appropriately peeled off with good reproducibility.
- Typical examples of such a release agent component (B) include polyorganosiloxane, and specific examples thereof include epoxy group-containing polyorganosiloxane, methyl group-containing polyorganosiloxane, and phenyl group-containing polyorganosiloxane.
- the present invention is not limited to these.
- the weight average molecular weight of the polyorganosiloxane as the release agent component (B) is usually 100,000 to 20,000,000, but from the viewpoint of realizing the effects of the present invention with good reproducibility, it is preferably 200,000 to 1,200,000, more preferably 300,000 to 9,000,000.
- the degree of dispersion is usually 1.0 to 10.0, but from the viewpoint of realizing the effects of the present invention with good reproducibility, it is preferably 1.5 to 5.0, more preferably 2.0 to 2.0. It is 3.0.
- the weight average molecular weight and the degree of dispersion can be measured by the above-mentioned method.
- epoxy group-containing polyorganosiloxane examples include those containing a siloxane unit (D 10 units) represented by R 11 R 12 SiO 2/2.
- R 11 is a group bonded to a silicon atom and represents an alkyl group
- R 12 is a group bonded to a silicon atom and represents an epoxy group or an organic group containing an epoxy group.
- Specific examples of the alkyl group include , The above-mentioned examples can be given.
- the epoxy group in the organic group containing an epoxy group may be an independent epoxy group without condensing with another ring, and a fused ring with another ring such as a 1,2-epoxide cyclohexyl group may be formed. It may be an epoxy group formed.
- organic group containing an epoxy group examples include, but are not limited to, 3-glycidoxypropyl and 2- (3,4-epoxycyclohexyl) ethyl.
- a preferable example of the epoxy group-containing polyorganosiloxane includes, but is not limited to, an epoxy group-containing polydimethylsiloxane.
- the epoxy group-containing polyorganosiloxane contains the above-mentioned siloxane unit (D 10 unit), but may contain the above Q unit, M unit and / or T unit in addition to D 10 unit.
- epoxy group-containing polyorganosiloxane examples include polyorganosiloxane consisting of only D 10 units, polyorganosiloxane containing D 10 units and Q units, and poly containing D 10 units and M units.
- the epoxy group-containing polyorganosiloxane is preferably an epoxy group-containing polydimethylsiloxane having an epoxy value of 0.1 to 5, and the weight average molecular weight thereof is usually 1,500 to 500,000, but in the adhesive composition. From the viewpoint of suppressing precipitation in the above, it is preferably 100,000 or less.
- epoxy group-containing polyorganosiloxane are represented by the trade name CMS-227 (manufactured by Gerest, weight average molecular weight 27,000) represented by the formula (A-1) and the formula (A-2).
- Product name ECMS-327 (manufactured by Gerest, weight average molecular weight 28,800), product name KF-101 represented by the formula (A-3) (manufactured by Shin-Etsu Chemical Industry Co., Ltd., weight average molecular weight 31,800),
- Product name KF-1001 represented by formula (A-4) (manufactured by Shinetsu Chemical Industry Co., Ltd., weight average molecular weight 55,600), trade name KF-1005 represented by formula (A-5) (Shinetsu Chemical Co., Ltd.) Industrial Co., Ltd., weight average molecular weight 11,500), trade name X-22-343 (manufactured by Shinetsu Chemical Industry Co., Ltd., weight average molecular weight 2,400) represented by formula (A-6
- R is an alkylene group having 1 to 10 carbon atoms.
- R is an alkylene group having 1 to 10 carbon atoms.
- R is an alkylene group having 1 to 10 carbon atoms.
- R is an alkylene group having 1 to 10 carbon atoms.
- R is an alkylene group having 1 to 10 carbon atoms.
- the methyl group-containing polyorganosiloxane includes, for example, a siloxane unit (D 200 units) represented by R 210 R 220 SiO 2/2 , preferably a siloxane unit (D 20) represented by R 21 R 21 SiO 2/2. Unit) is included.
- R 210 and R 220 are groups bonded to a silicon atom and independently represent an alkyl group, but at least one of them is a methyl group, and specific examples of the alkyl group include the above-mentioned examples.
- R 21 is a group bonded to a silicon atom, represents an alkyl group, and specific examples of the alkyl group include the above-mentioned examples. Of these, a methyl group is preferable as R 21.
- a preferred example of the methyl group-containing polyorganosiloxane is, but is not limited to, polydimethylsiloxane.
- the methyl group-containing polyorganosiloxane contains the above-mentioned siloxane unit (D 200 unit or D 20 unit), but includes the above Q unit, M unit and / or T unit in addition to D 200 unit and D 20 unit. You may.
- methyl group-containing polyorganosiloxane examples include polyorganosiloxane consisting of only D 200 units, polyorganosiloxane containing D 200 units and Q units, and poly containing D 200 units and M units.
- methyl group-containing polyorganosiloxane examples include polyorganosiloxane consisting of only D 20 units, polyorganosiloxane containing D 20 units and Q units, and poly containing D 20 units and M units.
- the viscosity of the methyl group-containing polyorganosiloxane is usually 1,000 to 2,000,000 mm 2 / s, but is preferably 10,000 to 1,000,000 mm 2 / s.
- the methyl group-containing polyorganosiloxane is typically a dimethylsilicone oil composed of polydimethylsiloxane.
- the kinematic viscosity can be measured with a kinematic viscometer. It can also be obtained by dividing the viscosity (mPa ⁇ s) by the density (g / cm 3).
- methyl group-containing polyorganosiloxane examples include WACKERSILICONE FLUID AK series manufactured by Wacker Chemi, and dimethyl silicone oil (KF-96L, KF-96A, KF-96, KF-96H, KF-) manufactured by Shin-Etsu Chemical Co., Ltd. 69, KF-965, KF-968), cyclic dimethyl silicone oil (KF-995) and the like, but are not limited thereto.
- Examples of the phenyl group-containing polyorganosiloxane include those containing a siloxane unit (D 30 units) represented by R 31 R 32 SiO 2/2.
- R 31 is a group bonded to a silicon atom and represents a phenyl group or an alkyl group
- R 32 is a group bonded to a silicon atom and represents a phenyl group.
- Specific examples of the alkyl group include the above-mentioned examples. Although it can be mentioned, a methyl group is preferable.
- the phenyl group-containing polyorganosiloxane contains the above-mentioned siloxane unit (D 30 unit), but may contain the above Q unit, M unit and / or T unit in addition to the D 30 unit.
- phenyl group-containing polyorganosiloxane examples include polyorganosiloxane consisting of only D 30 units, polyorganosiloxane containing D 30 units and Q units, and poly containing D 30 units and M units.
- the weight average molecular weight of the phenyl group-containing polyorganosiloxane is usually 1,500 to 500,000, but is preferably 100,000 or less from the viewpoint of suppressing precipitation in the adhesive composition.
- the adhesive composition used in the present invention contains a release agent component (B) together with a polyorganosiloxane component (A) that is cured by a hydrosilylation reaction, and in a more preferred embodiment, the release agent component (B). ), Polyorganosiloxane is included.
- the adhesive composition used in the present invention can contain the adhesive component (S) and the release agent component (B) in an arbitrary ratio, but considering the balance between the adhesiveness and the release property, the component (S) ) And the component (B) in terms of mass ratio, preferably 99.995: 0.005 to 30:70, more preferably 99.9: 0.1 to 75:25. That is, when the polyorganosiloxane component (A) cured by the hydrosilylation reaction is contained, the ratio of the component (A) to the component (B) is a mass ratio, preferably 99.995: 0.005 to 30 :. 70, more preferably 99.9: 0.1 to 75:25.
- the adhesive composition used in the present invention may contain a solvent for the purpose of adjusting the viscosity, and specific examples thereof include aliphatic hydrocarbons, aromatic hydrocarbons, and ketones. Not limited to.
- a solvent can be used alone or in combination of two or more.
- the adhesive composition used in the present invention contains a solvent
- the content thereof is appropriately set in consideration of the viscosity of the desired composition, the coating method to be adopted, the thickness of the thin film to be produced, and the like.
- the range is about 10 to 90% by mass with respect to the entire composition.
- the viscosity of the adhesive composition used in the present invention is usually 500 to 20,000 mPa ⁇ s, preferably 1,000 to 5,000 mPa ⁇ s at 25 ° C.
- the viscosity of the adhesive composition used in the present invention is adjusted by changing the types of organic solvents used, their ratios, the concentration of film constituents, etc., in consideration of various factors such as the coating method used and the desired film thickness. It is possible.
- the film constituent component means a component other than the solvent contained in the composition.
- the adhesive composition used in the present invention can be produced by mixing an adhesive component (S), and when used, a release agent component (B) and a solvent.
- the mixing order is not particularly limited, but as an example of a method capable of easily and reproducibly producing an adhesive composition, for example, the adhesive component (S) and the release agent component (B) are used as a solvent. Examples thereof include a method of dissolving, and a method of dissolving a part of the adhesive component (S) and the release agent component (B) in a solvent, dissolving the rest in a solvent, and mixing the obtained solution, but the method is limited thereto. Not done.
- it may be appropriately heated as long as the components are not decomposed or deteriorated.
- filtration may be performed using a filter on the order of submicrometers or the like during the production of the adhesive composition or after mixing all the components.
- the method for cleaning a semiconductor substrate of the present invention includes a step of peeling the adhesive layer on the semiconductor substrate with a peeling composition, and the peeling composition contains a solvent and does not contain a salt.
- the solvent is composed of a linear aliphatic saturated hydrocarbon compound having 8 to 10 carbon atoms.
- the linear aliphatic saturated hydrocarbon compound having 8 to 10 carbon atoms may be used alone or in combination of two or more.
- the linear aliphatic saturated hydrocarbon compound having 8 to 10 carbon atoms is not particularly limited as long as it has 8 to 10 carbon atoms and has a cyclic structure, and may be linear or branched. However, from the viewpoint of achieving peeling in a short time with good reproducibility, a linear hydrocarbon compound having 8 to 10 carbon atoms is preferable. If a cyclic aliphatic hydrocarbon compound having 8 or more carbon atoms is contained, peeling in a short time cannot be realized with good reproducibility. Further, when the carbon number is high, the peeling time is short, while when the carbon number is low, the flash point is high, which may increase the risk during work.
- linear hydrocarbon compound n-octane, n-nonane, and n-decane. Can be mentioned.
- the solvent contained in the peeling composition used in the present invention is composed of a linear aliphatic saturated hydrocarbon compound having 8 to 10 carbon atoms.
- the solvent contained in the stripping composition is completely composed of only a linear aliphatic saturated hydrocarbon compound having 8 to 10 carbon atoms, and ideally does not contain other solvents as impurities. There is a limit to the improvement of purity by purification, which is technically impossible. Therefore, in the present invention, the solvent contained in the peeling composition is one in which the solvent intentionally used is composed of only a linear aliphatic saturated hydrocarbon compound having 8 to 10 carbon atoms.
- the content of the linear aliphatic saturated hydrocarbon compound having 8 to 10 carbon atoms in the solvent contained in the peeling composition is completely 100% as a value of purity by gas chromatography. In some cases, it is usually 94% or more, preferably 95% or more, more preferably 96% or more, even more preferably 97% or more, still more preferably 98% or more, still more preferably 99% or more.
- the peeling composition used in the present invention does not contain a salt.
- a salt include those used for this type of application, typically tetrabutylammonium hydroxide added for the purpose of promoting removal of an adhesive layer or adhesive layer residue. , Tetrabutylammonium fluoride (also referred to as tetrabutylammonium fluoride) and the like. Since the peeling composition used in the present invention contains a linear aliphatic saturated hydrocarbon compound having 8 to 10 carbon atoms, it is not necessary to contain such a salt. Since such a salt can cause damage such as corrosion to a substrate, particularly a bumped substrate, the peeling composition containing no salt is used in the present invention. However, when the bulk solvent constituting the peeling composition contains a trace amount of salt as an impurity from the beginning, the existence of the salt is not denied.
- the adhesive layer on the semiconductor substrate is continuously brought into contact with the peeling composition to swell the adhesive layer and peel it from the semiconductor substrate.
- the method of continuously contacting the adhesive layer on the semiconductor substrate with the peeling composition is not particularly limited as long as the adhesive layer on the semiconductor substrate is in contact with the peeling composition with temporal continuity.
- the temporal continuity is not limited to the case where the adhesive layer is always in contact with the peeling composition, for example, after the adhesive layer and the organic solvent are contacted for a certain period of time, the contact is paused once and then again.
- the adhesive layer on the semiconductor substrate is always in contact with the peeling composition, and on the semiconductor substrate. It is preferable that the entire adhesive layer of the above is in contact with the peeling composition.
- the adhesive layer on the semiconductor substrate is swollen by immersing the adhesive layer in the peeling composition to peel off from the semiconductor substrate, or the adhesive layer on the semiconductor substrate is formed.
- the peeling composition is continuously supplied onto the adhesive layer to cause swelling and peeling from the semiconductor substrate.
- the semiconductor substrate with the adhesive layer may be immersed in the peeling composition.
- the immersion time is not particularly limited as long as the adhesive layer swells and the adhesive layer is peeled off from the semiconductor substrate, but it is 5 seconds or more from the viewpoint of realizing more effective cleaning with good reproducibility. It is less than 5 minutes from the viewpoint of throughput on the process.
- the adhesive layer on the semiconductor substrate is immersed in the peeling composition
- the semiconductor substrate with the adhesive layer is moved in the peeling composition
- the peeling composition is convoluted, and the peeling composition is vibrated by ultrasonic waves. Etc., the peeling of the adhesive layer may be promoted.
- a rocking washer, a paddle-type washer, or the like may be used, and such a washer has an adhesive layer.
- the adhesive layer on the semiconductor substrate receives relative convection, or the adhesive layer on the semiconductor substrate receives the convection generated by the movement or rotation.
- the peeling of the adhesive layer from the semiconductor substrate is promoted.
- a semiconductor substrate with an adhesive layer is fixed to a stage or the like.
- a convection washer that can realize a state in which the surrounding peeling composition is convected by a stirrer may be used.
- an ultrasonic cleaner or an ultrasonic probe may be used, and the conditions are usually 20 kHz to 5 MHz.
- the peeling composition may be continuously applied toward the adhesive layer on the semiconductor substrate.
- a rod-shaped or mist may be formed by a nozzle of a cleaning device or the like.
- a shaped, preferably rod-shaped stripping composition is supplied over the adhesive layer on the semiconductor substrate with temporal continuity.
- the temporal continuity in this case is not limited to the case where the peeling composition is always supplied on the adhesive layer on the semiconductor substrate, for example, after the peeling composition is supplied for a certain period of time, the supply is performed.
- the peeling composition is always placed on the adhesive layer on the semiconductor substrate from the viewpoint of realizing more effective cleaning with good reproducibility, although it includes the case where the supply is paused once and then the supply is repeated or the case is repeated. It is preferable to be supplied.
- the flow rate is usually 200 to 500 mL / min.
- the adhesive layer on the semiconductor substrate may be brought into contact with the steam of the peeling composition. good.
- the method for cleaning a semiconductor substrate of the present invention may include a step of removing the peeled adhesive layer.
- the method for removing the peeled adhesive layer is not particularly limited as long as the peeled adhesive layer is removed from the top of the semiconductor substrate, and when the semiconductor substrate with the adhesive layer is immersed in the peeling composition, the method is not particularly limited.
- the peeled adhesive layer may be removed without removing the semiconductor substrate from the peeling composition, or the semiconductor substrate may be taken out from the peeling composition and the peeled adhesive layer may be removed. At this time, by simply taking out the semiconductor substrate from the peeling composition, the peeled adhesive layer may naturally remain in the peeling composition and most of it may be removed.
- the method for removing the peeled adhesive layer include adsorption or suction removal using an apparatus, removal by blowing off with a gas such as an air gun, and centrifugation by moving or rotating the semiconductor substrate up and down or left and right. Methods such as removing by force and the like can be mentioned, but the method is not limited to these.
- the peeling composition used in the method for cleaning the semiconductor substrate of the present invention is also the subject of the present invention.
- the peeling composition of the present invention is used for peeling the adhesive layer on the semiconductor substrate from the semiconductor substrate, and preferred embodiments and conditions are as described above.
- the peeling composition of the present invention can be produced by mixing the solvents constituting the composition in any order, if necessary. At that time, if necessary, filtration or the like may be performed.
- the adhesive layer which is a cured film obtained from the siloxane-based adhesive containing the siloxane component (A), can be efficiently removed, and high-efficiency and good semiconductor device production can be expected.
- the semiconductor substrate to be cleaned by the cleaning method of the present invention includes, for example, a germanium substrate, a gallium-arsenic substrate, a gallium-phosphorus substrate, and a gallium-arsenic-aluminum substrate, in addition to the silicon semiconductor substrate such as the silicon wafer described above.
- Aluminum-plated silicon substrate, copper-plated silicon substrate, silver-plated silicon substrate, gold-plated silicon substrate, titanium-plated silicon substrate, silicon nitride film-formed silicon substrate, silicon oxide film-formed silicon substrate, polyimide film-formed silicon substrate, glass substrate, quartz substrate Also includes various substrates such as liquid crystal substrates and organic EL substrates.
- Examples of the use of the method for cleaning a semiconductor substrate of the present invention in a semiconductor process include use in a method for manufacturing a processed semiconductor substrate such as thinning used in a semiconductor packaging technology such as TSV. Specifically, a first step of manufacturing a laminate including a semiconductor substrate, a support substrate, and an adhesive layer obtained from an adhesive composition, a second step of processing the semiconductor substrate of the obtained laminate, and processing. Processing such as thinning was performed, including a third step of separating the semiconductor substrate and the adhesive layer and the support substrate, and a fourth step of removing the adhesive layer from the processed semiconductor substrate and cleaning the processed semiconductor substrate. It is a method for manufacturing a semiconductor substrate, and in this fourth step, the method for cleaning a semiconductor substrate of the present invention is used.
- the adhesive composition used for forming the adhesive layer in the first step the above-mentioned various adhesives can be used, but the method for cleaning the semiconductor substrate of the present invention is an adhesive obtained from a polysiloxane-based adhesive. It is effective for removing the layer, and is more effective for removing the adhesive layer obtained from the polysiloxane-based adhesive containing the component (A) that is cured by the hydrosilylation reaction. Therefore, an example of removing the adhesive layer by the cleaning method of the present invention when manufacturing a semiconductor substrate processed by using an adhesive layer obtained by using a polysiloxane-based adhesive (adhesive composition) will be described below. However, the present invention is not limited to this.
- the first step is a step of applying an adhesive composition to the surface of the semiconductor substrate or the support substrate to form an adhesive coating layer, and the semiconductor substrate and the support substrate via the adhesive coating layer.
- a load in the thickness direction of the semiconductor substrate and the support substrate is applied to bring them into close contact with each other, and then post-heat treatment is performed to form a laminate.
- the first step is, for example, a step of applying the adhesive composition to the circuit surface of the wafer of the semiconductor substrate and heating it to form an adhesive coating layer, and a step of forming an adhesive coating layer on the surface of the support substrate.
- At least one of a step of applying a release agent composition and heating it to form a release agent coating layer, and an adhesive coating layer of a semiconductor substrate and a release agent coating layer of a support substrate are heat-treated and reduced pressure treatment.
- the adhesive composition was applied to the semiconductor substrate and the release agent composition was applied to the support substrate and heated. However, the adhesive composition and the release agent composition were applied and heated to one of the substrates in sequence. You may go.
- the semiconductor substrate is a wafer and the support substrate is a support.
- the target to which the adhesive composition is applied may be either one or both of the semiconductor substrate and the support substrate.
- the wafer examples include, but are not limited to, silicon wafers and glass wafers having a diameter of 300 mm and a thickness of about 770 ⁇ m.
- the semiconductor substrate cleaning method of the present invention can effectively clean the substrate while suppressing damage to the bumps of the bumped semiconductor substrate.
- Specific examples of such a semiconductor substrate with bumps include a silicon wafer having bumps such as ball bumps, printing bumps, stud bumps, and plating bumps, and usually, the bump height is about 1 to 200 ⁇ m and the bump diameter is 1 to 200 ⁇ m.
- Bump pitch is appropriately selected from the conditions of 1 to 500 ⁇ m.
- Specific examples of the plating bumps include, but are not limited to, alloy plating mainly containing Sn such as SnAg bumps, SnBi bumps, Sn bumps, and AuSn bumps.
- the support is not particularly limited, and examples thereof include a silicon wafer having a diameter of about 300 mm and a thickness of about 700 mm, but the support is not limited thereto.
- release agent composition examples include compositions containing a release agent component used for this type of application.
- the coating method is not particularly limited, but is usually a spin coating method.
- a method of separately forming a coating film by a spin coating method or the like and attaching a sheet-shaped coating film may be adopted, which is also referred to as coating or coating film.
- the heating temperature of the applied adhesive composition cannot be unconditionally specified because it varies depending on the type and amount of the adhesive component contained in the adhesive composition, whether or not a solvent is contained, the desired thickness of the adhesive layer, and the like.
- the temperature is usually 80 to 150 ° C.
- the heating time is usually 30 seconds to 5 minutes.
- the heating temperature of the applied release agent composition cannot be unconditionally specified because it varies depending on the type and amount of the cross-linking agent, acid generator, acid, etc., whether or not a solvent is contained, the desired thickness of the release layer, and the like.
- it is 120 ° C. or higher, and from the viewpoint of preventing excessive curing, it is preferably 260 ° C. or lower, and the heating time is usually 1 to 10 minutes. Heating can be performed using a hot plate, an oven, or the like.
- the film thickness of the adhesive coating layer obtained by applying the adhesive composition and heating it is usually 5 to 500 ⁇ m.
- the film thickness of the release agent coating layer obtained by applying the release agent composition and heating it is usually 5 to 500 ⁇ m.
- the heat treatment is usually performed at 20 to 150 ° C. in consideration of the viewpoint of softening the adhesive coating layer to realize suitable bonding with the release agent coating layer, the viewpoint of realizing suitable curing of the release agent coating layer, and the like. It is appropriately determined from the range of.
- the temperature is preferably 130 ° C. or lower, more preferably 90 ° C. or lower, and the heating time thereof is the adhesive ability or peeling ability. From the viewpoint of reliably expressing the above, it is usually 30 seconds or more, preferably 1 minute or more, but from the viewpoint of suppressing deterioration of the adhesive layer and other members, it is usually 10 minutes or less, preferably 5 minutes or less.
- the reduced pressure treatment may be performed by lowering the semiconductor substrate, the adhesive coating layer and the support substrate, or the semiconductor substrate, the adhesive coating layer, the release agent coating layer and the support substrate under an atmospheric pressure of 10 to 10,000 Pa.
- the time of the reduced pressure treatment is usually 1 to 30 minutes.
- the substrate and the coating layer or the coating layers are bonded to each other, preferably by a reduced pressure treatment, more preferably by a combined heat treatment and a reduced pressure treatment.
- the load in the thickness direction of the semiconductor substrate and the support substrate is not particularly limited as long as it is a load that does not adversely affect the semiconductor substrate and the support substrate and the layer between them and can firmly adhere them, but is usually limited. It is in the range of 10 to 1000 N.
- the post-heating temperature is preferably 120 ° C. or higher from the viewpoint of obtaining a sufficient curing rate, and preferably 260 ° C. or lower from the viewpoint of preventing deterioration of the substrate, the adhesive component, the release agent component, and the like.
- the heating time is usually 1 minute or more from the viewpoint of realizing suitable bonding of the wafer by curing, and more preferably 5 minutes or more from the viewpoint of stabilizing the physical properties of the adhesive, and the adhesive layer due to excessive heating. From the viewpoint of avoiding adverse effects on the vehicle, it is usually 180 minutes or less, preferably 120 minutes or less. Heating can be performed using a hot plate, an oven, or the like.
- One purpose of the post-heat treatment is to more preferably cure the adhesive component (S).
- processing of the back surface opposite to the circuit surface of the front surface of the semiconductor substrate can be mentioned, and typically, thinning of the wafer by polishing the back surface of the wafer can be mentioned. Be done. Using such a thinned wafer, a through silicon via (TSV) or the like is formed, and then the thinned wafer is peeled off from the support to form a laminated body of the wafer, which is three-dimensionally mounted. Further, before and after that, the back surface electrode of the wafer and the like are also formed. Heat of 250 to 350 ° C.
- TSV through silicon via
- a wafer having a diameter of 300 mm and a thickness of about 770 ⁇ m can be thinned to a thickness of about 80 to 4 ⁇ m by polishing the back surface opposite to the circuit surface on the front surface.
- the third step of separating the processed semiconductor substrate and the adhesive layer from the support substrate will be described.
- the processed semiconductor substrate and adhesive layer are separated from the support substrate.
- the release layer is usually removed together with the support substrate.
- the method for separating the processed semiconductor substrate and the adhesive layer from the semiconductor substrate may be separated between the adhesive layer and the peeling layer or the supporting substrate in contact with the adhesive layer, and such peeling methods include laser peeling and sharpening. Mechanical peeling by equipment having a part, peeling by manual peeling, etc. can be mentioned, but the peeling is not limited to these.
- the fourth step is a step of removing the adhesive layer on the semiconductor substrate by the cleaning method of the present invention. Specifically, for example, the adhesive layer on the thinned substrate is efficiently removed by the cleaning method of the present invention.
- the conditions at this time are as described above.
- a detergent composition containing a salt may be used to remove the adhesive layer residue remaining on the semiconductor substrate, but damage to the bumps of the semiconductor substrate, particularly the semiconductor substrate having bumps, may be removed. Be careful not to cause.
- the method for manufacturing a processed semiconductor substrate of the present invention includes the above-mentioned first to fourth steps, but may include steps other than these steps. Further, the above-mentioned constituent elements and method elements related to the first step to the fourth step may be variously changed as long as they do not deviate from the gist of the present invention.
- Adhesive Composition [Preparation Example 1] In a 600 mL stirring container dedicated to the rotation / revolution mixer, 95 g of vinyl group-containing MQ resin (manufactured by Wacker Chemi) as (a1), 93.4 g of p-menthan (manufactured by Nippon Terupen Chemical Co., Ltd.) as solvent, and 1,1 as (A2). -Diphenyl-2-propin-1-ol (manufactured by Tokyo Kasei Kogyo Co., Ltd.) 0.41 g was added, and the mixture was stirred with a rotating revolution mixer for 5 minutes.
- vinyl group-containing MQ resin manufactured by Wacker Chemi
- p-menthan manufactured by Nippon Terupen Chemical Co., Ltd.
- 1,1 1,1 as (A2).
- -Diphenyl-2-propin-1-ol manufactured by Tokyo Kasei Kogyo Co., Ltd.
- the board with bumps was cut, and a 4 cm ⁇ 4 cm sample board was prepared.
- the number of bumps per sample substrate is 5044, and the structure of the bumps is that the pillar part is copper, the cap part is tin silver (1.8% by mass of silver), and the space between the pillar and the cap is from nickel. It has become.
- Example 1 The wafer with an adhesive layer produced in Production Example 1 was immersed in 9 mL of n-octane as the peeling composition of Example 1, and the time from the top of the wafer until the adhesive layer started peeling was measured and found to be 10 seconds. Met.
- Example 2 The wafer with an adhesive layer produced in Production Example 1 was immersed in 9 mL of n-nonane as the peeling composition of Example 2, and the time from the top of the wafer until the adhesive layer started peeling was measured and found to be 13 seconds. Met.
- Example 3 The wafer with an adhesive layer produced in Production Example 1 was immersed in 9 mL of n-decane as the peeling composition of Example 3, and the time from the top of the wafer until the adhesive layer started peeling was measured, and it took 18 seconds. Met.
- Example 1 The results of Examples and Comparative Examples are shown in Table 1.
- Table 1 when the solvent of the peeling composition is a peeling composition composed of a linear aliphatic saturated hydrocarbon compound having 8 to 10 carbon atoms (Examples 1 to 3), the number of carbon atoms is 8.
- a peeling composition containing up to 10 linear aliphatic saturated hydrocarbon compounds is not contained, and instead contains a compound having the same number of carbon atoms as the linear aliphatic saturated hydrocarbon compound ( Compared with Comparative Examples 1 to 4), the peeling time of the adhesive layer on the semiconductor substrate was extremely short.
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Abstract
Description
この点、銅やスズといった金属からバンプボールは、耐腐食性に乏しいことから、支持体やウエハーの接着剤残留物を除去するための洗浄剤組成物で損傷を受けるという課題があり(特許文献3)、基板の洗浄の際にバンプボールを腐食しないことが、洗浄剤組成物や洗浄方法に求められる事項の一つとして挙げられる。
1.半導体基板上の接着層を、剥離用組成物を用いて剥離する工程を含む、半導体基板の洗浄方法であって、
上記剥離用組成物が、溶媒を含み、塩を含まず、
上記溶媒が、炭素数8~10の直鎖状脂肪族飽和炭化水素化合物からなることを特徴とする、半導体基板の洗浄方法、
2.上記炭素数8~10の直鎖状脂肪族飽和炭化水素化合物が、n-オクタン、n-ノナン及びn-デカンから選択される少なくとも1種である1の半導体基板の洗浄方法、
3.上記接着層が、シロキサン系接着剤、アクリル樹脂系接着剤、エポキシ樹脂系接着剤、ポリアミド系接着剤、ポリスチレン系接着剤、ポリイミド接着剤及びフェノール樹脂系接着剤から選ばれる少なくとも1種を含む接着剤成分(S)を含む接着剤組成物を用いて得られる膜であることを特徴とする1又は2の半導体基板の洗浄方法、
4.上記接着剤成分(S)が、シロキサン系接着剤を含む3の半導体基板の洗浄方法、
5.上記シロキサン系接着剤が、ヒドロシリル化反応により硬化するポリオルガノシロキサン成分(A)を含む4の半導体基板の洗浄方法、
6.上記接着剤組成物が、剥離剤成分(B)を含む3~5のいずれかの半導体基板の洗浄方法、
7.上記接着剤組成物が、上記剥離剤成分(B)を上記接着剤成分(S)に対して25質量%以上含む6の半導体基板の洗浄方法、
8.半導体基板と、支持基板と、接着剤組成物から得られる接着層とを備える積層体を製造する第1工程、
得られた積層体の半導体基板を加工する第2工程、
支持基板から、半導体基板及び接着層を分離する第3工程、及び
半導体基板上の接着層を剥離用組成物を用いて剥離する第4工程を含む、加工された半導体基板の製造方法において、
上記剥離用組成物が、溶媒を含み、塩を含まず、
上記溶媒が、炭素数8~10の直鎖状脂肪族飽和炭化水素化合物からなることを特徴とする加工された半導体基板の製造方法、
9.上記炭素数8~10の直鎖状脂肪族飽和炭化水素化合物が、n-オクタン、n-ノナン及びn-デカンから選択される少なくとも1種である8の加工された半導体基板の製造方法、
10.上記接着層が、シロキサン系接着剤、アクリル樹脂系接着剤、エポキシ樹脂系接着剤、ポリアミド系接着剤、ポリスチレン系接着剤、ポリイミド接着剤及びフェノール樹脂系接着剤から選ばれる少なくとも1種を含む接着剤成分(S)を含む接着剤組成物を用いて得られる膜であることを特徴とする8又は9の加工された半導体基板の製造方法、
11.上記接着剤成分(S)が、シロキサン系接着剤を含む10の加工された半導体基板の製造方法、
12.上記シロキサン系接着剤が、ヒドロシリル化反応により硬化するポリオルガノシロキサン成分(A)を含む11の加工された半導体基板の製造方法、
13.上記接着剤組成物が、剥離剤成分(B)を含む10~12のいずれかの加工された半導体基板の製造方法、
14.上記接着剤組成物が、上記剥離剤成分(B)を上記接着剤成分(S)に対して25質量%以上含む13の加工された半導体基板の製造方法、
15.半導体基板を洗浄する際に上記半導体基板上の接着層を剥離するために用いられる剥離用組成物であって、
溶媒を含み、塩を含まず、
上記溶媒が、炭素数8~10の直鎖状脂肪族飽和炭化水素化合物からなることを特徴とする剥離用組成物、
16.上記炭素数8~10の直鎖状脂肪族飽和炭化水素化合物が、n-オクタン、n-ノナン及びn-デカンから選択される少なくとも1種である15の剥離用組成物、
17.上記接着層が、シロキサン系接着剤、アクリル樹脂系接着剤、エポキシ樹脂系接着剤、ポリアミド系接着剤、ポリスチレン系接着剤、ポリイミド接着剤及びフェノール樹脂系接着剤から選ばれる少なくとも1種を含む接着剤成分(S)を含む接着剤組成物を用いて得られる膜であることを特徴とする15又は16の剥離用組成物、
18.上記接着剤成分(S)が、シロキサン系接着剤を含む17の剥離用組成物、
19.上記シロキサン系接着剤が、ヒドロシリル化反応により硬化するポリオルガノシロキサン成分(A)を含む18の剥離用組成物、
20.上記接着剤組成物が、剥離剤成分(B)を含む19の剥離用組成物、
21.上記接着剤組成物が、上記剥離剤成分(B)を上記接着剤成分(S)に対して25質量%以上含む20の剥離用組成物
を提供する。
特に、接着層を有する半導体基板がバンプを備える場合、バンプへのダメージを回避又は抑制しつつ、当該接着層を好適に且つ容易に除去できるため、高効率且つ高信頼性で良好な半導体素子の製造を期待できる。
このような接着剤成分(S)は、この種の用途に用いられるものであれば特に限定されるものではなく、例えば、シロキサン系接着剤、アクリル樹脂系接着剤、エポキシ樹脂系接着剤、ポリアミド系接着剤、ポリスチレン系接着剤、ポリイミド接着剤、フェノール樹脂系接着剤等が挙げられる。
これらの中でも、ウエハー等の加工時は好適な接着能を示し、加工の後は好適に剥離可能であり、更に耐熱性にも優れることから、接着剤成分(S)としては、シロキサン系接着剤が好ましい。
中でも、メチル基が好ましい。
中でも、エテニル基、2-プロペニル基が好ましい。
なお、本発明における重量平均分子量及び数平均分子量並びに分散度は、例えば、GPC装置(東ソー(株)製
EcoSEC,HLC-8320GPC)及びGPCカラム(東ソー(株)TSKgel SuperMultiporeHZ-N, TSKgel SuperMultiporeHZ-H)を用い、カラム温度を40℃とし、溶離液(溶出溶媒)としてテトラヒドロフランを用い、流量(流速)を0.35mL/分とし、標準試料としてポリスチレン(シグマアルドリッチ社製)を用いて、測定することができる。
このような白金系の金属触媒は、ポリオルガノシロキサン(a1)のアルケニル基とポリオルガノシロキサン(a2)のSi-H基とのヒドロシリル化反応を促進するための触媒である。
白金とオレフィン類との錯体としては、例えばジビニルテトラメチルジシロキサンと白金との錯体が挙げられるが、これに限定されない。
白金族金属系触媒(A2)の量は、通常、ポリオルガノシロキサン(a1)及びポリオルガノシロキサン(a2)の合計量に対して、1.0~50.0ppmの範囲である。
重合抑制剤は、ヒドロシリル化反応の進行を抑制できる限り特に限定されるものではなく、その具体例としては、1-エチニル-1-シクロヘキサノール、1,1-ジフェニル-2-プロピオン-1-オール等のアルキニルアルコール等が挙げられる。
重合抑制剤の量は、ポリオルガノシロキサン(a1)及びポリオルガノシロキサン(a2)の合計量に対して、通常、その効果を得る観点から1000.0ppm以上であり、ヒドロシリル化反応の過度な抑制を防止する観点から10000.0ppm以下である。
このような剥離剤成分(B)として、典型的には、ポリオルガノシロキサンが挙げられ、その具体例としては、エポキシ基含有ポリオルガノシロキサン、メチル基含有ポリオルガノシロキサン、フェニル基含有ポリオルガノシロキサン等が挙げられるが、これらに限定されない。
本発明において、エポキシ基含有ポリオルガノシロキサンの好ましい一例としては、エポキシ基含有ポリジメチルシロキサンを挙げることができるが、これに限定されない。
R21は、ケイ素原子に結合する基であり、アルキル基を表し、アルキル基の具体例としては、上述の例示を挙げることができる。中でも、R21としては、メチル基が好ましい。
メチル基含有ポリオルガノシロキサンとの好ましい一例としては、ポリジメチルシロキサンを挙げることができるが、これに限定されない。
すなわち、ヒドロシリル化反応により硬化するポリオルガノシロキサン成分(A)が含まれる場合、成分(A)と成分(B)との比率は、質量比で、好ましくは99.995:0.005~30:70、より好ましくは99.9:0.1~75:25である。
本発明において、膜構成成分とは、組成物に含まれる溶媒以外の成分を意味する。
その混合順序は特に限定されるものではないが、容易にかつ再現性よく接着剤組成物を製造できる方法の一例としては、例えば、接着剤成分(S)と剥離剤成分(B)を溶媒に溶解させる方法や、接着剤成分(S)と剥離剤成分(B)の一部を溶媒に溶解させ、残りを溶媒に溶解させ、得られた溶液を混合する方法が挙げられるが、これらに限定されない。なお、接着剤組成物を調製する際、成分が分解したり変質したりしない範囲で、適宜加熱してもよい。
本発明においては、異物を除去する目的で、接着剤組成物を製造する途中で又は全ての成分を混合した後に、サブマイクロメートルオーダーのフィルター等を用いてろ過してもよい。
ここで、炭素数8~10の直鎖状脂肪族飽和炭化水素化合物は、1種単独であっても、2種以上であってもよい。
最も好ましくは、剥離用組成物に含まれる溶媒は、炭素数8~10の直鎖状脂肪族飽和炭化水素化合物のみから完全に構成され、その他の溶媒を不純物として含まないことが理想であるが、精製による純度向上にも限界が存在し、技術的にそれは不可能である。
従って、本発明において、上記剥離用組成物に含まれる溶媒は、溶媒として意図して用いられたものが炭素数8~10の直鎖状脂肪族飽和炭化水素化合物のみからなるものであって、バルクの炭素数8~10の直鎖状脂肪族飽和炭化水素化合物に含まれる、水、構造上又は性質上類似するため分離が容易でない有機溶媒等の不純物の存在までをも否定するものではない。
このような事情から、上記剥離用組成物に含まれる溶媒中、炭素数8~10の直鎖状脂肪族飽和炭化水素化合物の含有量は、ガスクロマトグラフィーによる純度の値として、完全に100%とならない場合もあり得、通常94%以上、好ましくは95%以上、より好ましくは96%以上、より一層好ましくは97%以上、更に好ましくは98%以上、更に一層好ましくは99%以上である。
このような塩の具体例としては、この種の用途に用いられるものが挙げられ、典型的には、接着層や接着層残渣の除去の促進等を目的として添加される、テトラブチルアンモニウムヒドロキシド、テトラブチルアンモニウムフルオリド(フッ化テトラブチルアンモニウムともいう)等のアンモニウム塩である。
本発明で用いる剥離用組成物は、炭素数8~10の直鎖状脂肪族飽和炭化水素化合物を含むので、このような塩を含有させる必要はない。
このような塩は、基板、特にバンプ付き基板等への腐食等のダメージを引き起こし得るため、本発明では、塩を含まない剥離用組成物を用いる。但し、剥離用組成物を構成するバルクの溶媒に、塩が不純物として当初から微量含まれる場合には、その塩の存在までをも否定するわけではない。
半導体基板上の接着層を剥離用組成物に継続的に接触させる方法は、半導体基板上の接着層が、剥離用組成物に時間的継続性をもって接触する限り特に限定されるものではなく、この時間的継続性には、接着層が常に剥離用組成物に接触している場合だけでなく、例えば、接着層と有機溶媒との接触を一定時間行った後、当該接触を一度休止し、再度当該接触を行う場合やこれを繰り返す場合も含まれ、また、半導体基板上の接着層全体が剥離用組成物に接触している場合だけでなく、接着層の一部が剥離用組成物に接触している場合も含まれるが、より効果的な洗浄を再現性よく実現する観点から、半導体基板上の接着層が、剥離用組成物に常に接触している態様が好ましく、また、半導体基板上の接着層全体が、剥離用組成物に接触している態様が好ましい。
浸漬時間は、接着層の膨潤が起こり、接着層が半導体基板から剥離される限り特に限定されるものではないが、より効果的な洗浄を再現性よく実現する観点から、5秒以上であり、プロセス上のスループットの観点から、5分以下である。
剥離した接着層を取り除く方法は、半導体基板の上から剥離した接着層が除去される限り特に限定されるものではなく、接着層が付いた半導体基板を剥離用組成物に浸漬する場合には、剥離用組成物から半導体基板を取り出すことなく、剥離した接着層を除いてもよく、或いは、剥離用組成物から半導体基板を取り出して、剥離した接着層を除去してもよい。この際、単に剥離用組成物から半導体基板を取り出すことで、剥離した接着層が自然に剥離用組成物中に残り、その大部分を取り除くことができる場合もある。
具体的には、半導体基板と、支持基板と、接着剤組成物から得られる接着層とを備える積層体を製造する第1工程、得られた積層体の半導体基板を加工する第2工程、加工した半導体基板及び接着層と支持基板とを分離する第3工程及び加工した半導体基板上から接着層を除去し、加工した半導体基板を洗浄する第4工程を含む、薄化等の加工がされた半導体基板の製造方法であって、この第4工程において、本発明の半導体基板の洗浄方法が使用される。
従って、以下、ポリシロキサン系接着剤(接着剤組成物)を用いて得られる接着層を用いて加工された半導体基板を製造する際に、当該接着層を本発明の洗浄方法によって取り除く例について説明するが、本発明は、これに限定されるわけではない。
その他の態様においては、かかる第1工程は、例えば、半導体基板のウエハーの回路面に接着剤組成物を塗布し、それを加熱して接着剤塗布層を形成する工程と、支持基板の表面に剥離剤組成物を塗布し、それを加熱して剥離剤塗布層を形成する工程と、半導体基板の接着剤塗布層と、支持基板の剥離剤塗布層とを、加熱処理及び減圧処理の少なくとも一方を実施しながら、半導体基板及び支持基板の厚さ方向の荷重をかけて密着させ、その後、後加熱処理を実施することにより、積層体とする工程とを含む。なお、接着剤組成物を半導体基板に、剥離剤組成物を支持基板にそれぞれ塗布し、加熱したが、いずれか一方の基板に、接着剤組成物及び剥離剤組成物の塗布及び加熱をそれぞれ順次行ってもよい。
上記各態様において、加熱処理、減圧処理、両者の併用のいずれの処理条件を採用するかは、接着剤組成物の種類や剥離剤組成物の具体的組成、両組成物から得られる膜の相性、膜厚、求める接着強度等の各種事情を勘案した上で決定される。
特に、本発明の半導体基板の洗浄方法は、バンプ付き半導体基板のバンプへのダメージを抑制しつつ、効果的に基板を洗浄できる。
このようなバンプ付き半導体基板の具体例としては、ボールバンプ、印刷バンプ、スタッドバンプ、めっきバンプ等のバンプを有するシリコンウエハーが挙げられ、通常、バンプ高さ1~200μm程度、バンプ径1~200μm、バンプピッチ1~500μmという条件から適宜選択される。
めっきバンプの具体例としては、SnAgバンプ、SnBiバンプ、Snバンプ、AuSnバンプ等のSnを主体とした合金めっき等が挙げられるが、これらに限定されない。
加熱は、ホットプレート、オーブン等を用いて行うことができる。
なお、後加熱処理の一つの目的は、接着剤成分(S)をより好適に硬化させることである。
本発明で用いる積層体に施される加工の一例としては、半導体基板の表面の回路面とは反対の裏面の加工が挙げられ、典型的には、ウエハー裏面の研磨によるウエハーの薄化が挙げられる。このような薄化されたウエハーを用いて、シリコン貫通電極(TSV)等の形成を行い、次いで支持体から薄化ウエハーを剥離してウエハーの積層体を形成し、3次元実装化される。また、それに前後してウエハー裏面電極等の形成も行われる。ウエハーの薄化とTSVプロセスには支持体に接着された状態で250~350℃の熱が付加されるが、本発明で用いる積層体が含む接着層は、その熱に対する耐熱性を有している。
例えば、直径300mm、厚さ770μm程度のウエハーは、表面の回路面とは反対の裏面を研磨して、厚さ80~4μm程度まで薄化することができる。
第3工程では、加工された半導体基板及び接着層と、支持基板とを分離する。この際、剥離層が積層体に含まれる場合は、通常、支持基板とともに、剥離層も取り除く。
加工された半導体基板及び接着層と、半導体基板とを分離する方法は、接着層とそれと接する剥離層又は支持基板との間で剥離すればよく、そのような剥離方法としては、レーザー剥離、鋭部を有する機材による機械的な剥離、マニュアルで引きはがす剥離等が挙げられるが、これらに限定されない。
第4工程は、半導体基板上の接着層を、本発明の洗浄方法により取り除く工程であり、具体的には、例えば、薄化基板上の接着層を本発明の洗浄方法によって効率的に取り除く。この際の諸条件は、上述した通りである。
[装置]
(1)自転公転ミキサー:(株)シンキー製 自転公転ミキサー ARE―500
(2)粘度計:東機産業(株)製 回転粘度計TVE-22H
(3)撹拌機:アズワン(株)製 ミックスローターバリアブル 1―1186-12
(4)光学顕微鏡:オリンパス(株)製 半導体/FPD検査顕微鏡 MX61L
n-オクタン:東京化成工業(株)製 純度>98.5%
シクロオクタン:東京化成工業(株)製 純度>98.0%
n-ノナン:富士フイルム和光純薬工業(株)製 純度>98.0%
n-デカン:三協化学(株)製 純度>97.0%
2-オクタノン:東京化成工業(株)製 純度>98.0%
ヘキサン酸ブチル:東京化成工業(株)製 純度>98.0%
n-オクタン酸エチル:東京化成工業(株)製 純度>98.0%
[調製例1]
自転公転ミキサー専用600mL撹拌容器に、(a1)としてビニル基含有MQ樹脂(ワッカーケミ社製)95g、溶媒としてp-メンタン(日本テルペン化学(株)製)93.4g及び(A2)として1,1-ジフェニル-2-プロピン-1-オール(東京化成工業(株)製)0.41gを加え、自転公転ミキサーで5分間撹拌した。
得られた混合物に、(a2)として粘度100mPa・sのSiH基含有直鎖状ポリジメチルシロキサン(ワッカーケミ社製)19.0g、(a1)として粘度200mPa・sのビニル基含有直鎖状ポリジメチルシロキサン(ワッカーケミ社製)29.5g、(B)としてポリジメチルシロキサンである粘度1000000mm2/sのポリオルガノシロキサン(ワッカーケミ社製、商品名AK1000000)65.9g、(A3)として1-エチニル-1-シクロヘキサノール(ワッカーケミ社製)0.41gを加え、自転公転ミキサーで更に5分間撹拌した。
その後、得られた混合物に、(A2)として白金触媒(ワッカーケミ社製)0.20gと(a1)として粘度1000mPa・sのビニル基含有直鎖状ポリジメチルシロキサン(ワッカーケミ社製)17.7gとを自転公転ミキサーで5分間撹拌して別途得られた混合物から14.9gを加え、自転公転ミキサーで更に5分間撹拌し、得られた混合物をナイロンフィルター300メッシュでろ過し、接着剤組成物を得た。
[製造例1]
デバイス側のウエハーとしての4cm×4cmのSiウエハー(厚さ775μm)に、調製例1で得られた組成物をスピンコーターで塗布し、ホットプレートを用いて、120℃で1.5分間、次いで200℃で10分間加熱し、ウエハー上に厚さ60μmの薄膜を形成し、接着層付きウエハーを得た。
バンプ付き基板をカットし、4cm×4cmのサンプル基板を準備した。なお、1つのサンプル基板当たりのバンプの数は、5044個であり、バンプの構造はピラー部が銅で、キャップ部がスズ銀(銀1.8質量%)およびピラーとキャップの間がニッケルからなっている。
[実施例1]
製造例1で作製した接着層付きウエハーを、実施例1の剥離用組成物としてのn-オクタン9mLに浸漬し、ウエハー上から接着層が剥離を開始するまでの時間を計測した所、10秒であった。
製造例1で作製した接着層付きウエハーを、比較例1の剥離用組成物としてのシクロオクタン9mLに浸漬し、ウエハー上から接着層が剥離を開始するまでの時間を計測した所、40秒であった。
製造例1で作製した接着層付きウエハーを、実施例2の剥離用組成物としてのn-ノナン9mLに浸漬し、ウエハー上から接着層が剥離を開始するまでの時間を計測した所、13秒であった。
製造例1で作製した接着層付きウエハーを、実施例3の剥離用組成物としてのn-デカン9mLに浸漬し、ウエハー上から接着層が剥離を開始するまでの時間を計測した所、18秒であった。
製造例1で作製した接着層付きウエハーを、比較例2の剥離用組成物としての2-オクタノン9mLに浸漬し、ウエハー上から接着層が剥離を開始するまでの時間を計測した所、38秒であった。
製造例1で作製した接着層付きウエハーを、比較例3の剥離用組成物としてのヘキサン酸ブチル9mLに浸漬し、ウエハー上から接着層が剥離を開始するまでの時間を計測した所、36秒であった。
製造例1で作製した接着層付きウエハーを、比較例4の剥離用組成物としてのn-オクタン酸エチル9mLに浸漬し、ウエハー上から接着層が剥離を開始するまでの時間を計測した所、38秒であった。
製造例2で作製したサンプル基板を、実施例1~3の剥離用組成物9mLにそれぞれ浸漬し、1時間静置した後にイソプロパノールとアセトンで洗浄し、光学顕微鏡でバンプダメージの有無を観察した。その結果、いずれの基板においても、バンプダメージは観測されなかった。
Claims (21)
- 半導体基板上の接着層を、剥離用組成物を用いて剥離する工程を含む、半導体基板の洗浄方法であって、
上記剥離用組成物が、溶媒を含み、塩を含まず、
上記溶媒が、炭素数8~10の直鎖状脂肪族飽和炭化水素化合物からなることを特徴とする、半導体基板の洗浄方法。 - 上記炭素数8~10の直鎖状脂肪族飽和炭化水素化合物が、n-オクタン、n-ノナン及びn-デカンから選択される少なくとも1種である請求項1記載の半導体基板の洗浄方法。
- 上記接着層が、シロキサン系接着剤、アクリル樹脂系接着剤、エポキシ樹脂系接着剤、ポリアミド系接着剤、ポリスチレン系接着剤、ポリイミド接着剤及びフェノール樹脂系接着剤から選ばれる少なくとも1種を含む接着剤成分(S)を含む接着剤組成物を用いて得られる膜であることを特徴とする請求項1又は2記載の半導体基板の洗浄方法。
- 上記接着剤成分(S)が、シロキサン系接着剤を含む請求項3記載の半導体基板の洗浄方法。
- 上記シロキサン系接着剤が、ヒドロシリル化反応により硬化するポリオルガノシロキサン成分(A)を含む請求項4記載の半導体基板の洗浄方法。
- 上記接着剤組成物が、剥離剤成分(B)を含む請求項3~5のいずれか1項記載の半導体基板の洗浄方法。
- 上記接着剤組成物が、上記剥離剤成分(B)を上記接着剤成分(S)に対して25質量%以上含む請求項6記載の半導体基板の洗浄方法。
- 半導体基板と、支持基板と、接着剤組成物から得られる接着層とを備える積層体を製造する第1工程、
得られた積層体の半導体基板を加工する第2工程、
支持基板から、半導体基板及び接着層を分離する第3工程、及び
半導体基板上の接着層を剥離用組成物を用いて剥離する第4工程を含む、加工された半導体基板の製造方法において、
上記剥離用組成物が、溶媒を含み、塩を含まず、
上記溶媒が、炭素数8~10の直鎖状脂肪族飽和炭化水素化合物からなることを特徴とする加工された半導体基板の製造方法。 - 上記炭素数8~10の直鎖状脂肪族飽和炭化水素化合物が、n-オクタン、n-ノナン及びn-デカンから選択される少なくとも1種である請求項8記載の加工された半導体基板の製造方法。
- 上記接着層が、シロキサン系接着剤、アクリル樹脂系接着剤、エポキシ樹脂系接着剤、ポリアミド系接着剤、ポリスチレン系接着剤、ポリイミド接着剤及びフェノール樹脂系接着剤から選ばれる少なくとも1種を含む接着剤成分(S)を含む接着剤組成物を用いて得られる膜であることを特徴とする請求項8又は9記載の加工された半導体基板の製造方法。
- 上記接着剤成分(S)が、シロキサン系接着剤を含む請求項10記載の加工された半導体基板の製造方法。
- 上記シロキサン系接着剤が、ヒドロシリル化反応により硬化するポリオルガノシロキサン成分(A)を含む請求項11記載の加工された半導体基板の製造方法。
- 上記接着剤組成物が、剥離剤成分(B)を含む請求項10~12のいずれか1項記載の加工された半導体基板の製造方法。
- 上記接着剤組成物が、上記剥離剤成分(B)を上記接着剤成分(S)に対して25質量%以上含む請求項13記載の加工された半導体基板の製造方法。
- 半導体基板を洗浄する際に上記半導体基板上の接着層を剥離するために用いられる剥離用組成物であって、
溶媒を含み、塩を含まず、
上記溶媒が、炭素数8~10の直鎖状脂肪族飽和炭化水素化合物からなることを特徴とする剥離用組成物。 - 上記炭素数8~10の直鎖状脂肪族飽和炭化水素化合物が、n-オクタン、n-ノナン及びn-デカンから選択される少なくとも1種である請求項15記載の剥離用組成物。
- 上記接着層が、シロキサン系接着剤、アクリル樹脂系接着剤、エポキシ樹脂系接着剤、ポリアミド系接着剤、ポリスチレン系接着剤、ポリイミド接着剤及びフェノール樹脂系接着剤から選ばれる少なくとも1種を含む接着剤成分(S)を含む接着剤組成物を用いて得られる膜であることを特徴とする請求項15又は16記載の剥離用組成物。
- 上記接着剤成分(S)が、シロキサン系接着剤を含む請求項17記載の剥離用組成物。
- 上記シロキサン系接着剤が、ヒドロシリル化反応により硬化するポリオルガノシロキサン成分(A)を含む請求項18記載の剥離用組成物。
- 上記接着剤組成物が、剥離剤成分(B)を含む請求項19記載の剥離用組成物。
- 上記接着剤組成物が、上記剥離剤成分(B)を上記接着剤成分(S)に対して25質量%以上含む請求項20記載の剥離用組成物。
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