WO2021193135A1 - Procédé de montage, dispositif de montage et dispositif de transfert - Google Patents

Procédé de montage, dispositif de montage et dispositif de transfert Download PDF

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Publication number
WO2021193135A1
WO2021193135A1 PCT/JP2021/010010 JP2021010010W WO2021193135A1 WO 2021193135 A1 WO2021193135 A1 WO 2021193135A1 JP 2021010010 W JP2021010010 W JP 2021010010W WO 2021193135 A1 WO2021193135 A1 WO 2021193135A1
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Prior art keywords
transfer
substrate
semiconductor chip
transferred
mounting
Prior art date
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PCT/JP2021/010010
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English (en)
Japanese (ja)
Inventor
新井　義之
Original Assignee
東レエンジニアリング株式会社
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Filing date
Publication date
Priority claimed from JP2020051720A external-priority patent/JP7463153B2/ja
Priority claimed from JP2021012397A external-priority patent/JP2022115687A/ja
Application filed by 東レエンジニアリング株式会社 filed Critical 東レエンジニアリング株式会社
Priority to CN202180022696.6A priority Critical patent/CN115335974A/zh
Priority to KR1020227025264A priority patent/KR20220158219A/ko
Publication of WO2021193135A1 publication Critical patent/WO2021193135A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/04—Mounting of components, e.g. of leadless components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/951—Supplying the plurality of semiconductor or solid-state bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/40—Details of apparatuses used for either manufacturing connectors or connecting the semiconductor or solid-state body
    • H01L2924/401—LASER

Definitions

  • the present invention relates to a transfer device, a mounting method, and a mounting device for stably mounting a semiconductor chip with high accuracy.
  • LEDs used in displays are required to mount semiconductor chips of 50 um ⁇ 50 um or less called micro LEDs with an accuracy of several um at high speed.
  • Patent Document 1 a laser beam generated from a laser light source is reflected by a galvano mirror, and a plurality of elements arranged on the transfer source substrate are selectively irradiated, so that an element separated from the transfer source substrate by irradiation is transferred to a transfer destination.
  • the transfer method of the element to be transferred to the substrate is described. By this transfer method, it is possible to transfer a minute-sized element to the transfer destination substrate at high speed, and it is also possible to mount the element on the circuit board at high speed by using this.
  • an object of the present invention is to provide a mounting method and a mounting device capable of mounting a semiconductor chip on a circuit board with high productivity.
  • the mounting method of the present invention includes a first transfer step of transferring a plurality of semiconductor chips formed on a carrier substrate to a first transfer substrate, and transfer to the first transfer substrate.
  • An inspection step of inspecting the state of the semiconductor chip a second transfer step of transferring only the semiconductor chip determined to be normal by the inspection step from the first transfer substrate to the second transfer substrate, and the second transfer step. It is characterized by having a mounting process of mounting a semiconductor chip transferred to a transfer board onto a circuit board.
  • the second transfer step only the semiconductor chips judged to be normal in the inspection step are transferred from the first transfer substrate to the second transfer substrate, so that the semiconductor chips need to be repaired after mounting.
  • the number of circuits can be significantly reduced, and the productivity of the circuit board can be improved.
  • the mounting step includes a crimping step of crimping the semiconductor chip together with the second transfer board to the circuit board, and a separation step of separating the second transfer board and the semiconductor chip.
  • the transfer of the semiconductor chip is selectively performed in the second transfer step so that the semiconductor chips are arranged on the second transfer board facing the crimping step according to the position where the semiconductor chip should be arranged on the circuit board. Good to be done.
  • first transfer step and the second transfer step are performed by laser lift-off, and the first element spacing, which is the spacing between the semiconductor chips transferred to the first substrate by the first transfer step. Is smaller than the distance between the second elements, which is the distance between the semiconductor chips transferred to the second substrate by the second transfer step, and the oscillation frequency of the laser light in the first transfer step is the second. It may be higher than the oscillation frequency of the laser beam in the transfer process.
  • the distance between the semiconductor chips on the substrate is set to be relatively small until the first transfer step immediately before the second transfer step, so that the element can emit laser light at a relatively high oscillation frequency. Since the transfer can be performed, the transfer of the semiconductor chip to the circuit board can be completed in a short time.
  • each laser beam emitted from the laser light source has an oscillation frequency capable of transferring the semiconductor chip at the second element interval when the unit is operated.
  • the semiconductor chip can be transferred in the shortest possible time even in the second transfer step.
  • the optical path of the laser beam is controlled by the galvano mirror.
  • the circuit board is provided with a repair semiconductor chip that functions in place of the semiconductor chip determined to be abnormal as a result of the post-mounting inspection step of inspecting the performance of the semiconductor chip mounted on the circuit board and the post-mounting inspection step.
  • the semiconductor chips are arranged from the first transfer board so as to be arranged according to the position where the semiconductor chips for repair should be arranged on the circuit board. It is preferable that the semiconductor chip is selectively transferred to the second transfer substrate, the semiconductor chip is crimped to the circuit board together with the second transfer substrate, and the second transfer substrate is separated from the semiconductor chip.
  • the state of the semiconductor chip on the first transfer substrate is inspected by visual inspection by image analysis.
  • the inspection process can be completed in a short time.
  • the state of the semiconductor chip on the first transfer substrate is inspected by photoluminescence.
  • a chip removing step of removing the semiconductor chip determined to be abnormal from the first transfer substrate between the inspection step and the second transfer step is preferable to further have a chip removing step of removing the semiconductor chip determined to be abnormal from the first transfer substrate between the inspection step and the second transfer step.
  • the mounting apparatus of the present invention transfers a plurality of semiconductor chips from the carrier substrate to the first transfer substrate and transfers the semiconductor chips from the first transfer substrate to the second transfer substrate.
  • the second transfer substrate is characterized in that only semiconductor chips determined to be normal by the inspection of the inspection unit are transferred from the first transfer substrate.
  • the mounting apparatus of the present invention only the semiconductor chips judged to be normal by the inspection of the inspection unit are transferred from the first transfer board to the second transfer board, so that the number of semiconductor chips that need to be repaired after mounting is increased. Can be significantly reduced, and the productivity of the circuit board can be improved.
  • the transfer device of the present invention includes a laser light source that emits laser light and can control the oscillation frequency of the laser light, and an optical path control unit that controls the optical path of the laser light.
  • a transfer device that controls the irradiation position of laser light on the transfer substrate by the optical path control unit and transfers any of the plurality of elements held on the transfer substrate to the transfer substrate by laser lift-off.
  • the first substrate is the substrate to be transferred, the first transfer mode in which the element is transferred to the first substrate, the first substrate is the transfer substrate, and the second substrate is the transfer substrate.
  • the elements have a second transfer mode in which the element held on the first substrate is transferred to the second substrate, and the elements are transferred to the first substrate by the first transfer mode.
  • the first element spacing which is the spacing between the elements
  • the second element spacing which is the spacing between the elements transferred to the second substrate by the second transfer mode, and the laser in the first transfer mode.
  • the light oscillation frequency is characterized in that it is higher than the oscillation frequency of the laser beam in the second transfer mode.
  • the distance between the elements on the substrate is set to be relatively small, so that the elements are transferred while emitting laser light at a relatively high oscillation frequency. Therefore, the transfer of the element to the circuit board can be completed in a short time.
  • the second board may be a circuit board on which a wiring circuit is formed.
  • the transfer is performed under the condition that the element spacing on the substrate is relatively small until just before the circuit board, so that the transfer of the element to the circuit board can be completed in a shorter time.
  • each laser beam emitted from the laser light source has an oscillation frequency capable of transferring the element at the second element interval when the unit is operated.
  • the element can be transferred in the shortest possible time even in the second transfer mode.
  • optical path control unit should be a galvano mirror.
  • the optical path control unit can be formed with a simple configuration.
  • the distance between the first elements is preferably equal to the distance between the elements in the growth substrate which is the substrate on which the element is grown.
  • the distance between the elements in the first transfer mode becomes close to the minimum, and the oscillation frequency of the laser beam in the first transfer mode can be set higher.
  • the performance determination mode for determining the operating performance of each of the elements, and in the first transfer mode, only the element determined to be normal in the performance determination mode is transferred to the first substrate. Is good.
  • a semiconductor chip can be mounted on a circuit board with high productivity.
  • FIG. 1 shows a mounting device that performs the mounting method of the present invention.
  • the mounting device 100 includes a transfer unit 10, an inspection unit 20, and a mounting unit 30, in which the transfer unit 10 performs a first transfer step and a second transfer step, and the mounting unit 30 performs a mounting step. Will be. Further, the semiconductor chip is inspected by the inspection unit 20 between the first transfer step and the second transfer step. Further, the transfer of the substrates (carrier substrate 2, first transfer substrate 4a, second transfer substrate 4b, circuit board 6) between the devices is carried out by one or more types of robot hands 40.
  • the transfer unit 10 is located below the laser irradiation unit 12 that irradiates the laser beam 11, the transfer substrate holding unit 13 that holds the transfer substrate and can move at least in the X-axis direction and the Y-axis direction, and the transfer substrate holding unit 13.
  • a transfer substrate holding unit 14 that holds the transfer substrate so as to face the transfer substrate with a gap, and a control unit (not shown) are provided.
  • the laser irradiation unit 12 is a device that irradiates a laser beam 11 such as an excimer laser, a YAG laser, or a visible light laser at a predetermined oscillation frequency, and is fixedly provided on the transfer unit 10.
  • the laser irradiation unit 12 irradiates the spot-shaped laser light 11, and the laser light 11 is in the X-axis direction and the Y-axis via the galvanometer mirror 15 and the f ⁇ lens 16 whose angle is adjusted by the control unit.
  • the irradiation position in the direction is controlled, and the semiconductor chips 1 arranged on the transfer substrate held by the transfer substrate holding portion 13 are selectively irradiated.
  • the oscillation frequency in the present description refers to the number of times that a predetermined optical output is repeatedly output in 1 second.
  • the predetermined optical output is repeated 1000 times per second. It is output.
  • the larger the oscillation frequency the shorter the time interval of the optical output.
  • the first transfer step and the second transfer step are carried out by the transfer unit 10.
  • the carrier substrate 2 corresponds to the transfer substrate
  • the first transfer substrate 4a corresponds to the substrate to be transferred.
  • the second transfer step the first transfer substrate 4a corresponds to the transfer substrate
  • the second transfer substrate 4b corresponds to the transfer substrate.
  • the transfer substrate holding portion 13 has an opening and sucks and holds the vicinity of the outer peripheral portion of the transfer substrate.
  • the laser beam 11 emitted from the laser irradiation unit 12 can be applied to the transfer substrate held by the transfer substrate holding unit 13 through this opening.
  • the transfer substrate holding portion 13 moves relative to the transferred substrate holding portion 14 at least in the X-axis direction and the Y-axis direction by a moving mechanism (not shown).
  • the control unit controls this movement mechanism and adjusts the position of the transfer substrate holding unit 13, so that the relative position of the semiconductor chip 1 held on the transfer substrate with respect to the transferred substrate can be adjusted.
  • the transfer substrate holding portion 14 has a flat surface on the upper surface and holds the transfer substrate during the transfer process of the semiconductor chip 1.
  • a plurality of suction holes are provided on the upper surface of the transfer substrate holding portion 14, and the back surface of the transfer substrate (the surface on which the semiconductor chip 1 is not transferred) is held by the suction force.
  • the transfer substrate holding portion 13 moves in the X-axis direction and the Y-axis direction, so that the transfer substrate holding portion 13 and the transferred substrate holding portion 14 move relative to each other.
  • the substrate holding portion 14 to be transferred is also provided with moving mechanisms in the X-axis direction and the Y-axis direction. You may be.
  • the inspection unit 20 includes a camera 21, a substrate holding unit 22 to be inspected, and a control unit (not shown).
  • the inspection target held by the substrate holding unit 22 to be inspected is imaged by the camera 21 and a semiconductor chip is analyzed by image analysis. Perform the visual inspection of 1.
  • the inspection target is a plurality of semiconductor chips 1 transferred to the first transfer substrate 4a.
  • the semiconductor chip 1 on the first transfer substrate 4a does not reach its performance in the process of forming the semiconductor chip 1 in the carrier substrate 2 described later, or cracks occur during transfer to the first transfer substrate 4a. There is. Whether or not the performance of the semiconductor chip 1 is normal can be determined with high accuracy by checking the color and shape of the semiconductor chip 1.
  • the camera 21 is, for example, a CMOS camera in the present embodiment, and has an image pickup element, and uses a signal received from the outside as a trigger to convert a light beam formed on the image pickup element into an electric signal to create a digital image. ..
  • the image pickup direction of the camera 21 is vertically downward, and the semiconductor chip 1 is imaged from above.
  • the camera 21 is attached to a moving device (not shown), the moving device is driven by control by the control unit, and the camera 21 moves in the X-axis direction and the Y-axis direction.
  • the inspection unit 20 has a lighting unit (not shown).
  • the illumination unit is LED illumination, and emits light in synchronization with the movement of the camera 21 by the moving device, and when the illumination unit emits light, the camera 21 takes an image in the X-axis direction and the Y-axis direction. The appearance of the plurality of arranged semiconductor chips 1 is continuously imaged.
  • the mounting unit 30 includes a mounting table 31, a head 32, and a two-field optical system 33, and also includes a control unit (not shown).
  • the mounting table 31 can mount the circuit board 6 and hold it so as not to move by vacuum suction, and is configured to be movable in the X and Y axis directions by the XY stage.
  • the mounting table 31 has a heater 34, and the temperature of the surface of the mounting table 31 ( ⁇ the temperature of the circuit board 6 mounted on the mounting table 31) can be controlled by the control unit. .. Further, the mounting table 31 is provided with a thermometer (not shown), and the temperature of the mounting table 31 measured by the thermometer can be fed back to control the temperature.
  • the tip of the head 32 is a substantially flat surface, has one or more suction holes, and sucks and holds the surface of the second transfer substrate 4b on the side where the semiconductor chip 1 is not transferred during the mounting process. Further, the head 32 is movable in the Z-axis direction, and the circuit board 6 held by the mounting table 31 and the bump of the semiconductor chip 1 transferred to the second transfer board 4b held by the head 32 are transferred to each other. Contact and pressurize. Further, the head 32 has a heater 35, and the temperature of the head 32, particularly the tip portion, can be controlled by the control unit. Further, the head 32 is provided with a thermometer (not shown), and the temperature of the head 32 measured by the thermometer can be fed back to control the temperature.
  • the head 32 is configured to be movable in the ⁇ direction (the central direction centered on the Z-axis direction), and the mounting table 31 is moved in the X and Y-axis directions and the head 32 is moved in the Z-axis and ⁇ directions.
  • the semiconductor chip 1 can be thermocompression-bonded and mounted at a predetermined position on the circuit board 6 by interlocking with the above.
  • the heater 34 and the heater 35 are controlled at the same time, and the temperature of the surface of the mounting table 31 and the temperature of the tip of the head 32 ( ⁇ the temperature of the second transfer substrate 4b) are always equal during the mounting process. I am trying to be. By doing so, as described above, even if the circuit board 6 and the second transfer board 4b thermally expand during the mounting process, the portion of the second transfer board 4b that comes into contact with the semiconductor chip 1 and the circuit board 6 are on the circuit board 6. The position relative to the portion where the bumps of the semiconductor chip 1 are joined is unlikely to change, and high-precision mounting can be stably performed.
  • the head 32 is configured to move in the Z-axis and ⁇ directions
  • the mounting table 31 is configured to move in the X and Y-axis directions. It can be changed.
  • the head 32 may move in the X-axis, Y-axis, and ⁇ directions
  • the mounting table 31 may move in the Z-axis direction.
  • the movement mechanism in the ⁇ direction can be omitted if it is not necessary. For example, if there is no rotational deviation in the positions of the semiconductor chip 1 and the circuit board 6, the movement mechanism in the ⁇ direction can be omitted.
  • the two-field optical system 33 can enter between the head 32 and the circuit board 6 when the circuit board 6 is mounted on the mounting table 31 and capture both images. Each captured image is image-processed by the control unit to recognize the respective positional deviation. Then, in consideration of this misalignment, the control unit controls the semiconductor chips 1 so that they are brought into contact with and joined to a predetermined position on the circuit board 6, thereby causing the semiconductor chips 1 to be joined in the X and Y axis directions. Implement with high precision.
  • FIG. 5 is a diagram illustrating a first transfer step of the mounting method in the present invention.
  • FIG. 6 is a diagram illustrating an inspection step and a chip removing step of the mounting method in the present invention.
  • FIG. 9 is a diagram illustrating a second transfer step of the mounting method in the present invention.
  • FIG. 10 is a diagram illustrating a mounting process in another embodiment.
  • the surface held by the carrier substrate is defined as the first surface, and the surface opposite to the first surface is defined as the second surface.
  • a bump is formed on the surface of the circuit board and is joined to the circuit board.
  • performing the first transfer step by the transfer unit 10 is also referred to as a first transfer mode
  • performing the second transfer step described later by the transfer unit 10 is also referred to as a second transfer mode.
  • FIG. 5A shows a plurality of semiconductor chips 1 after dicing in which the first surface is held on the carrier substrate 2.
  • the carrier substrate 2 extends in the depth direction of FIG. 1 and has a circular shape or a quadrangular shape, and is made of silicon, gallium arsenide, sapphire, or the like. Further, a plurality (hundreds to tens of thousands) of semiconductor chips 1 are arranged two-dimensionally along the spread of the carrier substrate 2.
  • the small semiconductor chip 1 called a micro LED has a size of 50 um ⁇ 50 um or less, and is arranged at a pitch obtained by adding the dicing width to this size.
  • Such a small semiconductor chip 1 is required to be mounted on a circuit board 6 with high accuracy (for example, an accuracy of 1 um or less). Further, bumps are formed on the second surface of the semiconductor chip 1.
  • FIG. 5B shows a first transfer in which a second surface, which is a surface opposite to the first surface, which is a surface held by the carrier substrate 2 of the semiconductor chip 1, is attached to the first transfer substrate 4a.
  • the substrate pasting process is shown.
  • the first transfer substrate 4a is first held by the substrate portion 14 to be transferred by vacuum suction, and an adhesive layer 3a is formed on the surface on which the semiconductor chip 1 is attached.
  • the carrier substrate 2 holding the semiconductor chip 1 is sucked and handled by the robot hand 40, and the transfer substrate 4a held by the transfer substrate portion 14 shown in FIG. 2
  • the second surface of the semiconductor chip 1 is attached onto the adhesive layer 3a.
  • the carrier substrate removing step is executed on the first transfer substrate 4a to which the semiconductor chip 1 is attached together with the carrier substrate 2 as described above.
  • the carrier substrate removing step the carrier substrate 2 is peeled off from the semiconductor chip 1 by laser lift-off and removed.
  • the laser beam 11a emitted from the laser irradiation unit 12 shown in FIG. 2 is irradiated on the first surface of the semiconductor chip 1 through the carrier substrate 2.
  • a part of the GaN layer of the micro LED which is the semiconductor chip 1 is decomposed into Ga and N, and the semiconductor chip 1 is peeled off from the carrier substrate 2 made of sapphire.
  • the carrier substrate 2 in which all the semiconductor chips 1 are irradiated with the laser beam 11a is removed by separating the robot hand 40 on which the carrier substrate 2 is vacuum-adsorbed from the first transfer substrate 4a.
  • the semiconductor chip 1 is transferred from the carrier substrate 2 to the first transfer substrate 4a through the first transfer substrate attaching step and the carrier substrate removing step in this way.
  • the step of transferring the semiconductor chip 1 from the carrier substrate 2 to the first transfer substrate 4a is referred to as a first transfer step.
  • the carrier substrate 2 is removed after the second surface of the semiconductor chip 1 is attached to the first transfer substrate 4a in the first transfer step, but the first is not limited to this.
  • the carrier substrate 2 is irradiated with a laser under a state where the transfer substrate 4a is prepared at a position slightly separated from the second surface of the semiconductor chip 1, a part of the GaN layer of the micro LED is decomposed into Ga and N.
  • the semiconductor chip 1 may be urged by the propulsive force generated thereby, and may fly from the carrier substrate 2 to the first transfer substrate 4a and adhere to the first transfer substrate 4a.
  • the semiconductor chip 1 is transferred from the carrier substrate 2 to the first transfer substrate 4a by peeling the carrier substrate 2 from the semiconductor chip 1 by laser lift-off, but the present invention is not necessarily limited to this. It can be changed as appropriate.
  • the carrier substrate 2 may be scraped off from the side opposite to the side on which the semiconductor chip 1 is provided to be removed. This is called backgrinding, and this backgrinding technique is used because laser lift-off is not applicable, especially in the case of red LEDs.
  • the inspection step shown in FIG. 6A is executed in the inspection unit 20 shown in FIG.
  • the camera 21 is above the hundreds to tens of thousands of semiconductor chips 1 arranged in the X-axis direction and the Y-axis direction on the first transfer substrate 4a that is adsorbed and held by the substrate holding portion to be inspected. Takes an image while moving.
  • the control unit of the inspection unit 20 analyzes the image obtained by this imaging, and visually inspects the color, shape, and the like of each semiconductor chip 1.
  • the time required for the inspection step for this one first transfer substrate 4a is about 30 minutes when the first transfer substrate 4a is a 6-inch wafer.
  • the transfer device 1 in this embodiment includes a wavelength measurement unit 20 as an inspection unit 20, and the emission characteristics (for example, emission wavelength) of each element 1 in which the wavelength measurement unit 20 is a light emitting element. Is measured, and the measurement result is reflected in the transfer of the element 1 in the transfer unit 10.
  • the wavelength measuring unit 20 measures the emission wavelength of each element 1 on the first transfer substrate 4a by using photoluminescence, and the laser light source 23, the wavelength measuring device 24, and the substrate to be inspected.
  • a holding portion 22 is provided.
  • the back surface of the first transfer substrate 4a which is the substrate to be inspected, is set by the substrate holding portion 22 to be inspected so that the surface (front surface) on which the element 1 is held is horizontal and upward. It is sucked and gripped.
  • the laser light source 23 is a device that emits one laser beam L2, and in the present embodiment, emits a laser beam such as a YAG laser or a visible light laser.
  • the wavelength measuring device 24 measures the wavelength of the light incident on itself, and a known optical wavemeter is applied.
  • the laser beam L2 When the laser beam L2 is incident on the element 1 at a predetermined position on the first transfer substrate 4a, the electrons in the element 1 are excited. When this electron returns to the ground state, it emits emitted light L3 (so-called photoluminescence).
  • emitted light L3 so-called photoluminescence
  • the substrate holding portion 22 to be inspected can be moved in the X-axis direction and the Y-axis direction by the moving stage, and the first transfer substrate 4a is moved in the X-axis direction and Y with respect to the laser light source 23 and the wavelength measuring instrument 24. Move relative to the axial direction.
  • the wavelength measuring unit 20 measures the emission wavelengths of all the elements 1 held by the first transfer substrate 4a.
  • FIG. 8 is a graph showing the distribution of the emission wavelength of the element 1 on the first transfer substrate 4a obtained by the wavelength measuring unit 20.
  • the horizontal axis is the emission wavelength
  • the vertical axis is the number of elements 1 (number of elements) that emit light at each emission wavelength.
  • the control device has a group A in a predetermined wavelength range including an emission wavelength having a mode value with respect to this distribution and a group outside the group A (the emission wavelength is larger than the mode value). It is classified into two groups of group B (different groups).
  • the red LED emits light of 600 nm to 780 nm
  • the green LED emits light of 505 nm to 530 nm
  • the blue LED emits light of 470 to 485 nm.
  • the wavelength range is set as group A, and the range outside the range is set as group B.
  • the control device determines that the element 1 belonging to group B whose emission wavelength is far from the mode value has not reached the performance. Then, only the element 1 belonging to the group A, which is the element 1 having normal performance, is used as the first transfer substrate so that the element 1 of the group B is not used for the transfer to the second transfer substrate 4b in the transfer unit 10. Transfer from 4a to the second transfer substrate 4b.
  • the wavelength measurement unit 20 measuring the emission wavelength of each element 1 as described above is called a wavelength measurement mode, and the operating performance of each element 1 is normal as in group A.
  • the control device determines the operating performance of each element 1 such as whether it falls into the category or falls into the unachieved category such as group B it is called a performance determination mode.
  • the completed display will have no uneven light emission.
  • the performance determination mode is executed prior to the first transfer mode, and in the first transfer mode, only the element 1 determined to be normal in the performance determination mode is transferred to the second transfer substrate 4b.
  • the chip removing step shown in FIG. 6B is carried out after the inspection step.
  • the semiconductor chip 1 is burnt out by irradiating the semiconductor chip 1 (two semiconductor chips 1 represented by dots in FIG. 6B) determined to be abnormal in the inspection process with laser light 11b. , Removed from the first transfer substrate 4a.
  • This chip removing step may be carried out by the transfer unit 10. Since the laser beam 11b at this time needs to burn out the semiconductor chip 1, it is irradiated from the laser irradiation unit 12 with a power stronger than that of the laser beam 11a in the first transfer step described above.
  • the transfer substrate holding portion 13 (not shown) holds the first transfer substrate 4a so that the adhesive layer 3a and the semiconductor chip 1 face downward as shown in FIG. 9A.
  • the transfer substrate holding portion 14 holds the second transfer substrate 4b so that the second transfer substrate 4b having the adhesive layer 3b is located below the first transfer substrate 4a.
  • the control unit of the transfer unit 10 adjusts the angle of the galvano mirror 15 to transmit the laser beam 11c through the first transfer substrate 4a at the interface between the adhesive layer 3a and the second surface of the predetermined semiconductor chip 1.
  • the semiconductor chip 1 is laser lifted off. Specifically, gas is generated from the adhesive layer 3a by irradiation with the laser beam 11, and the semiconductor chip 1 is urged by the generation of this gas, flies downward from the first transfer substrate 4a, and is a second transfer substrate. Land on 4b.
  • the semiconductor chip 1 transferred to the second transfer substrate 4b in this way has a first surface facing the second transfer substrate 4b, and the bumps are exposed on the surface.
  • this second transfer step not all the semiconductor chips 1 on the first transfer substrate 4a are continuously transferred, but the semiconductor chips 1 are selectively transferred as shown in FIG. 9B.
  • the arrangement of the semiconductor chips 1 on the first transfer substrate 4a immediately after the first transfer step is equivalent to the arrangement of the semiconductor chips 1 on the carrier substrate 2 before the first transfer step.
  • the arrangement of the semiconductor chips 1 on the second transfer board 4b is arranged according to the position where the semiconductor chips 1 should be arranged on the circuit board 6 in preparation for the mounting process described later. More specifically, the semiconductor chips 1 are arranged on the second transfer board 4b in a layout that has a mirror image relationship with the layout of the semiconductor chips 1 in the region where the semiconductor chips 1 can be mounted on the circuit board 6 in one mounting process. Has been done.
  • the semiconductor chip 1 that can be transferred to the position to be transferred on the second transfer substrate 4b is transferred to the first transfer substrate 4a. May not exist. In that case, as shown in FIG. 9C, it is advisable to move the first transfer substrate 4a and the second transfer substrate 4b relative to each other, and then perform laser lift-off.
  • how to relatively move the first transfer substrate 4a and the second transfer substrate 4b to form a predetermined layout on the second transfer substrate 4b with the minimum number of movements depends on AI. You may use it to make a decision.
  • the power of the laser beam 11c when the laser is lifted off from the first transfer substrate 4a is sufficient to decompose the adhesive layer 3a, and the power of the laser beam 11a for decomposing the GaN layer in the first transfer step is sufficient.
  • the mounting steps shown in FIGS. 10A to 10C are carried out in the mounting unit 30 shown in FIG.
  • the head 32 shown in FIG. 4 holds the surface of the second transfer board 4b on the side where the semiconductor chip 1 is not transferred, and the second transfer board 4b is mounted on a mounting table 31 described later.
  • the circuit board 6 is opposed to the semiconductor chip 1 held on the second transfer board 4b.
  • the head 32 approaches the circuit board 6, and as shown in FIG. 10B, the bump provided on the second surface of the semiconductor chip 1 and the circuit board 6 are brought into contact with each other to further pressurize the circuit board 6.
  • a bonding material 5 such as ACF (anisotropic conductive film) is provided on the surface of the circuit board 6 with which the semiconductor chip 1 abuts, and the semiconductor chip 1 abuts on the bonding material 5. After that, the semiconductor chip 1 is held by the bonding material 5.
  • ACF anisotropic conductive film
  • the head 32 is provided with a heater 35, and when the semiconductor chip 1 is pressurized, the heater 35 operates to heat the semiconductor chip 1 to a relatively low temperature of 50 ° C. or lower, thereby joining through the semiconductor chip 1.
  • the temperature of the material 5 rises, and the adhesive force of the bonding material 5 around the bump of the semiconductor chip 1 increases.
  • the semiconductor chip 1 is thermocompression-bonded to the extent that the position does not shift with respect to the wiring of the circuit board 6. That is, the semiconductor chip 1 is temporarily crimped to the circuit board 6.
  • the semiconductor chip 1 may not be heated during the temporary crimping. I do not care.
  • crimping the semiconductor chip 1 together with the second transfer board 4b to the circuit board 6 in this way is referred to as a crimping step.
  • the head 32 is separated from the circuit board 6 while holding the second transfer board 4b, so that the second transfer board 4b is separated from the semiconductor chip 1.
  • Separating the second transfer substrate 4b and the semiconductor chip 1 in this way is referred to as a separation step in this description.
  • the second transfer board 4b is simply separated from the circuit board 6 for the second transfer. It is possible to separate the substrate 4b and the semiconductor chip 1.
  • a plurality of semiconductor chips 1 are simultaneously crimped by one mounting step.
  • the semiconductor chip 1 is a micro LED
  • the number of semiconductor chips 1 mounted on one circuit board 6 is tens of thousands.
  • 3840 ⁇ 2160 ⁇ 3 semiconductor chips 1 are arranged in one panel, but a plurality of semiconductor chips 1 are collectively transferred to one second transfer substrate 4b, and the semiconductor chips 1 are transferred to one second transfer substrate 4b.
  • the time required for mounting can be significantly reduced.
  • the number of semiconductor chips 1 to be transferred to the second transfer substrate 4b at one time is considered to be 80 ⁇ 80, 120 ⁇ 120, or the like.
  • the semiconductor chip 1 may be mainly crimped to the circuit board 6 in the crimping step.
  • a series of mounting methods in the present invention is completed when the separation step is completed.
  • the coefficient of thermal expansion of at least the surface of the head 32 in contact with the second transfer substrate 4b (the tip of the head 32), the coefficient of thermal expansion of the second transfer substrate 4b, and the semiconductor chip 1 of the circuit board 6 are mounted. It is preferable that the coefficients of thermal expansion of the surfaces are the same.
  • the material of the tip of the head 32, the second transfer board 4b, and the surface on which the semiconductor chip 1 of the circuit board 6 is mounted is the same.
  • the material of the circuit board 6 is glass
  • glass is used as the material of the tip of the head 32 and the material of the second transfer board 4b as in the circuit board 6.
  • SUS304 is used as the material of the tip of the head 32 and the material of the second transfer board 4b.
  • the coefficient of thermal expansion of copper is 16.8 ppm
  • the coefficient of thermal expansion of SUS304 is 17.3 ppm, and the difference is about 3%.
  • a heater 34 is provided not only on the head 32 but also on the mounting table 31, and the temperature of the head 32 and the second transfer board 4b and the semiconductor chip 1 of the circuit board 6 are mounted while the thermocompression bonding process is performed.
  • the heater 34 and the heater 35 are controlled so that the temperature of the surface to be formed is always equal to that of the surface. By doing so, even if the circuit board 6, the head 32, and the second transfer board 4b thermally expand during the mounting process, the portion of the second transfer board 4b that comes into contact with the semiconductor chip 1 and the circuit board 6 The position relative to the portion where the bump of the semiconductor chip 1 is joined is unlikely to change, and high-precision mounting can be stably performed.
  • FIG. 11 is a diagram illustrating a lighting inspection process and a repair process.
  • the circuit board 6 is attached to the lighting inspection device 41 as shown in FIG. 11A. It is placed, all semiconductor chips 1 are turned on, and the light emission performance is inspected.
  • the step of inspecting the performance of the semiconductor chip 1 mounted on the circuit board 6 in this way is referred to as a post-mounting inspection step in the present invention.
  • the post-mounting inspection step (lighting inspection) if there is a semiconductor chip 1 that does not light or has low brightness like the second semiconductor chip 1 from the right in FIG. 11 (a), it is as shown in FIG. 11 (b).
  • the semiconductor chip 1 is irradiated with a laser beam 11d to burn it.
  • the power of the laser beam 11d may be the same as the power of the laser beam 11b in the chip removing step shown in FIG. 6B, and this step may be performed by the transfer unit 10. Even if there is a semiconductor chip 1 having abnormal performance, if a new semiconductor chip 1 can be arranged in the vicinity of the semiconductor chip 1, the semiconductor chip 1 is left without being burnt. It doesn't matter.
  • the joining material 5 may also be burned down.
  • the joining material 5 is applied as shown in FIG. 11 (c).
  • a repair semiconductor chip which is a new semiconductor chip 1 that functions in place of the semiconductor chip 1 having abnormal performance, is mounted at a portion where the semiconductor chip 1 is burnt down.
  • mounting the semiconductor chip for repair in this way is called a repair process, but the time required for one repair is about 30 seconds.
  • the circuit board 6 when used for, for example, a 4K television, 24.88 million semiconductor chips 1 are used. If the defect rate of the semiconductor chip 1 is 0.1%, it is necessary to repair about 25,000 pieces. Then, if the repair semiconductor chips are repaired one by one, the calculation will take about 200 hours just for the repair, and even if the mounting process itself is completed at high speed using the laser lift-off, the repair will greatly increase the productivity. Affect.
  • the mounting method of the present invention has an inspection process. Then, only the semiconductor chip 1 determined to be normal by this inspection step, that is, the semiconductor chip 1 having a non-defective rate of 100% in the inspection step is arranged on the second transfer board 4b, and is mounted on the circuit board 6. As a result, the number of defective lighting chips in the lighting inspection is significantly reduced as compared with the case where the chips are mounted without the inspection process, and the number of semiconductor chips 1 that need to be repaired after mounting can be significantly reduced. Productivity can be improved.
  • the mounting method of the present invention adds an inspection step, but as described above, the time required for the inspection step is about 30 minutes. It is possible to provide the circuit board 6 having a normal lighting rate of 100% by shortening the time.
  • the mounting method of the present invention is further utilized, and as shown in FIG. 12, the semiconductor chip 1 is transferred from the first transfer board 4a to the second transfer board 4b according to a plurality of repair positions on the circuit board 6. Is selectively transferred, and a plurality of points are repaired at the same time using the second transfer substrate 4b, whereby the time required for the repair can be further shortened.
  • FIG. 13 is a schematic view showing the first transfer mode.
  • the substrate to be transferred is the first substrate w1, and the transfer unit 10 transfers the element 1 held by the substrate w0 to the first substrate w1.
  • the substrate w0 may be a growth substrate on which the element 1 is epitaxially grown, or may be an intermediate substrate in which the transfer of the element 1 from the substrate to the substrate is performed once or a plurality of times.
  • the first element spacing d1 which is the pitch of the element 1 transferred to the first substrate w1 is the pitch of the element 1 transferred to the second substrate w2 by the second transfer mode described later. It is smaller than the element spacing d2 of 2. Further, the first element spacing d1 is the pitch of the element 1 formed on the growth substrate at the end of dicing, and the transfer of the element 1 is performed so as to maintain this pitch from the growth substrate to the first substrate w1. It is preferable to be For example, if the element 1 having a dimension of 20 um ⁇ 40 um is formed on the growth substrate at a pitch of 30 um in the short side direction and 50 um in the long side direction, the growth substrate to the first substrate w1 while maintaining this pitch. It is preferable that the transfer is performed.
  • the laser light L1 is emitted from the laser light source 12 at a predetermined oscillation frequency f1.
  • the oscillation frequency f1 (Hz) and the scan speed v1 (m / s) by the galvanometer mirror 15 are set so that each emitted laser beam L1 can laser lift off a predetermined element 1.
  • the transfer unit 10 sets the element 1. It can be transferred in order.
  • the transfer unit 10 can transfer the elements 1 in order, but the oscillation frequency f1 transfers them within a predetermined time. Since the number of elements 1 can be increased, it is preferable that the transfer is performed under the condition that the oscillation frequency f1 is as high as possible.
  • FIG. 14 is a schematic view showing a second transfer mode.
  • the first substrate w1 to which the element 1 is transferred by the above-mentioned first transfer mode is a transfer substrate
  • the second substrate w2 is a transfer substrate
  • the transfer unit 10 is the first substrate w1.
  • the element 1 held in the second substrate w2 is transferred to the second substrate w2.
  • the second substrate w2 is a circuit board for a television display in which a wiring circuit is formed on the surface in the present embodiment, and when the element 1 is transferred onto the wiring circuit, the element 1 which is an LED light emitting element is lit. It will be possible.
  • the transfer unit 10 transfers every few elements 1 held on the first substrate w1, so that the pitch of the elements 1 on the second substrate w2 is on the circuit board. Is adjusted to the pitch to be arranged for the element 1 to function, that is, the pitch of the wiring circuit on the circuit board, that is, the second element spacing d2.
  • the second element spacing d2, which is the pitch of the elements 1 on the substrate w2 of 2 is 600 um.
  • the oscillation frequency of the laser light L1 by the laser light source 12 may be restricted.
  • FIG. 15 is a graph showing the relationship between the scan speed of the optical path control unit (galvano mirror 15) and the oscillation frequency of the laser beam L1.
  • the solid line shows the case where the pitch of the laser lift-off target (element 1) is 0.03 mm
  • the alternate long and short dash line shows the case where the pitch is 0.60 mm.
  • the scan speed of the galvanometer mirror 15 is finite, and if the maximum scan speed is 5 m / s, it is emitted in a pulse shape under the condition of the maximum scan speed.
  • the oscillation frequency of the laser beam L1 capable of transferring the element 1 in which each laser beam L1 is arranged at a pitch of 0.03 mm is about 166 kHz.
  • each laser beam L1 emitted in a pulse shape transfers the element 1 even when the scan speed is the maximum value.
  • the oscillation frequency of the laser beam L1 is only about 8.3 kHz, and even if the laser light source 12 can emit the laser beam L1 at an oscillation frequency of 200 kHz, its performance cannot be fully utilized and the laser beam L1 is transferred within a predetermined time.
  • the number of elements 1 that can be made is relatively small.
  • the oscillation frequency of the laser light source 12 is made different between the first transfer mode and the second transfer mode, and the first element spacing d1 in the first transfer mode is the second in the second transfer mode. It is controlled so that the oscillation frequency f1 in the first transfer mode is higher than the oscillation frequency f2 in the second transfer mode after being made smaller than the element spacing d2 of 2.
  • the scan speed v2 of the galvano mirror 15 is set to be near the maximum speed (5 m / s), and the oscillation frequency f2 is such that each laser beam L1 is a wiring circuit at that time.
  • the frequency (about 8.3 kHz) at which the element 1 can be transferred is set at the second element interval d2 (0.60 mm) corresponding to the pitch of.
  • the scan speed v1 of the galvanometer mirror 15 is equal to the scan speed v2 and is close to the maximum speed (5 m / s), and the oscillation frequency f1 is such that each laser beam L1 is the first at that time.
  • the frequency (about 166 kHz) at which the element 1 can be transferred is set at the element interval d1 (0.03 mm).
  • the transfer speed becomes slow in the second transfer mode due to the relatively large interval d2 of the second element due to the pitch of the wiring circuit, while the first transfer mode immediately before the second transfer mode
  • the distance between the elements on the substrate is relatively small up to the transfer mode of, it is possible to transfer the elements while setting a relatively high oscillation frequency and emitting laser light, so that the elements can be transferred in a short time.
  • the transfer of the element to the circuit board can be completed.
  • the oscillation frequency f2 of the laser beam L1 in the second transfer mode is emitted from the laser light source 12 when the galvano mirror 15 is operated so as to be close to the maximum speed that can be controlled by the galvano mirror 15 which is an optical path control unit. Since each of the laser beams L1 has a frequency at which the element 1 can be transferred at the second element interval d2, the element 1 can be transferred in the shortest possible time even in the second transfer mode.
  • the spacing between the elements 1 in the first transfer mode becomes close to the minimum, and the laser in the first transfer mode
  • the oscillation frequency f1 of the light L1 can be set higher.
  • the mounting method, mounting device, and transfer device of the present invention are not limited to the forms described above, and may be other forms within the scope of the present invention.
  • the first transfer step and the second transfer step are carried out under atmospheric pressure, but the transfer section 10 may be carried out in a reduced pressure environment by providing a pressure reducing section (not shown). ..
  • the semiconductor chip is transferred by a laser in the transfer unit, but other means may be used.
  • the semiconductor chip may be transferred by attaching the semiconductor chip to the adhesive sheet.
  • the laser irradiation position is controlled by the galvano mirror in the transfer unit, but the present invention is not limited to this, and other known techniques such as a polygon mirror may be used to control the laser irradiation position. Further, the laser irradiation position may be controlled only by the relative movement of the transfer substrate and the transfer substrate without utilizing the reflection of the mirror.
  • first transfer step and the second transfer step are carried out by the same transfer section, but different transfer sections may be provided and each transfer section may be used. ..
  • the inspection of the semiconductor chip by the inspection unit is not limited to the visual inspection by image analysis and photoluminescence, and may be, for example, an inspection using X-rays.
  • the second substrate is a circuit board that is finally mounted on a product such as a display, but the present invention is not limited to this, and for example, a substrate that is transferred at a stage before the circuit board is the second substrate. It may be used as a substrate. However, in this case, the number of substrates transferred at the second element interval is multiple including the circuit board, and the transfer time is required accordingly. Therefore, as described above, the circuit board is used as the second substrate, and this second substrate is used. It is most desirable that the transfer of the element from the substrate to the substrate proceeds in a state where the distance between the elements is small until the transfer of the element to the substrate.
  • the first element spacing is the pitch of the elements formed on the growth substrate at the end of dicing, and the transfer of the elements is performed so as to maintain this pitch from the growth substrate to the first substrate.
  • the pitch may be changed in the middle of the process, and the elements may be finally arranged on the circuit board at predetermined intervals.
  • the scan speed is the same in the first transfer mode and the second transfer mode, which is the highest speed that can be controlled by the galvanometer mirror, but the present invention is not limited to this, and for example, in the first transfer mode.
  • the scan speed of may be slower than the scan speed in the second transfer mode.

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Abstract

L'invention concerne un procédé de montage, un dispositif de montage et un dispositif de transfert qui peuvent monter une puce semi-conductrice sur une carte de circuit imprimé avec une productivité élevée. En détail, le procédé de montage comprend : une première étape de transfert pour transférer, vers un premier substrat de transfert (4a), une pluralité de puces semi-conductrices (1) formées sur un substrat de support (2) ; une étape d'inspection pour inspecter l'état de la puce semi-conductrice (1) transférée au premier substrat de transfert (4a) ; une seconde étape de transfert pour transférer, du premier substrat de transfert (4a) à un second substrat de transfert (4b), seulement la puce semi-conductrice (1) déterminée comme étant normale à l'étape d'inspection ; et une étape de montage pour monter, sur une carte de circuit imprimé (6), la puce semi-conductrice (1) transférée au second substrat de transfert (4b).
PCT/JP2021/010010 2020-03-23 2021-03-12 Procédé de montage, dispositif de montage et dispositif de transfert WO2021193135A1 (fr)

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JP2020051720A JP7463153B2 (ja) 2020-03-23 2020-03-23 実装方法および実装装置
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