WO2021192017A1 - Dispositif de filtrage de lumière, microscope optique et appareil d'observation de défaut - Google Patents

Dispositif de filtrage de lumière, microscope optique et appareil d'observation de défaut Download PDF

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Publication number
WO2021192017A1
WO2021192017A1 PCT/JP2020/012940 JP2020012940W WO2021192017A1 WO 2021192017 A1 WO2021192017 A1 WO 2021192017A1 JP 2020012940 W JP2020012940 W JP 2020012940W WO 2021192017 A1 WO2021192017 A1 WO 2021192017A1
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WO
WIPO (PCT)
Prior art keywords
shutter
filtering device
opening
rack
optical filtering
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Application number
PCT/JP2020/012940
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English (en)
Japanese (ja)
Inventor
吉村　保廣
青野　宇紀
祐子 大谷
哲 高田
Original Assignee
株式会社日立ハイテク
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 株式会社日立ハイテク filed Critical 株式会社日立ハイテク
Priority to PCT/JP2020/012940 priority Critical patent/WO2021192017A1/fr
Priority to JP2022509817A priority patent/JP7385003B2/ja
Priority to KR1020227030668A priority patent/KR20220136419A/ko
Priority to TW110107649A priority patent/TW202204883A/zh
Publication of WO2021192017A1 publication Critical patent/WO2021192017A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/02—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/0004—Microscopes specially adapted for specific applications
    • G02B21/0016—Technical microscopes, e.g. for inspection or measuring in industrial production processes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/0004—Microscopes specially adapted for specific applications
    • G02B21/002—Scanning microscopes
    • G02B21/0024—Confocal scanning microscopes (CSOMs) or confocal "macroscopes"; Accessories which are not restricted to use with CSOMs, e.g. sample holders
    • G02B21/0036—Scanning details, e.g. scanning stages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Definitions

  • the present invention relates to an optical filtering device, an optical microscope and a defect observation device.
  • Defect observation devices include scanning electron microscopes (SEMs) that review and classify various defects, foreign substances, etc. (hereinafter referred to as “defects, etc.”) that occur on the surface of wafers that are semiconductor substrates in semiconductor manufacturing lines, etc. It has.
  • SEMs scanning electron microscopes
  • the defect observation device is further equipped with an optical microscope.
  • the defect observation device has a function of controlling an optical microscope, efficiently and automatically detecting defects on the wafer surface, and performing coordinate alignment. By controlling the SEM, the shape of minute defects detected by an optical microscope can be observed in detail and the components can be analyzed. It is desirable that the optical microscope can be used as a dark field optical microscope (DFOM: Dark Field Optical Microscope).
  • the defect observation device has a function of automatically outputting SEM images, classification data such as defects, elemental analysis data, etc., and can also create a defect map from the output data. Further, the defect observation device can also observe, classify, and analyze defects and the like based on the created defect map. For this reason, the defect observation device is also called a review SEM. It is also called a defect review SEM (Defect Review-SEM) or a wafer inspection SEM.
  • the optical microscope and the SEM have a common stage, and the wafer placed on this stage is observed with an optical microscope, the position of the detected defect or the like is specified, and the defect or the like is identified. It can be observed by SEM. For example, according to a defect map having an accuracy of several tens of ⁇ m, a defect or the like can be searched for in a range of several hundred nm using a dark field microscope of a defect observation device, and the position of the defect or the like can be identified with an accuracy of several ⁇ m or less. can.
  • Patent Document 1 in a defect observation device including a first imaging unit (optical microscope) and a second imaging unit (SEM), the next imaging of the first imaging unit from among a plurality of imaging means of the first imaging unit is described. Defects detected by the first imaging unit by setting the imaging conditions of the means or the second imaging unit, setting the integrated frame number, acceleration voltage, probe current, imaging magnification or imaging field as the imaging conditions of the second imaging unit. A coordinate correction formula is calculated based on the position information of the above and the information obtained by image acquisition by the first imaging unit, and a defect is imaged using the second imaging unit based on the corrected position information. There is.
  • Patent Document 2 describes holes that are arranged two-dimensionally on an SOI wafer, a shutter pattern that is an optically opaque thin film that covers the holes and is arranged two-dimensionally on an SOI wafer, and is formed on an SOI wafer.
  • An optical filtering device comprising a shutter array with an insulator is disclosed.
  • SOI is an abbreviation for Silicon on Insulator
  • the SOI wafer has a structure in which an oxide insulating film (BOX layer: Burid Oxide layer) and a surface Si film (SOI portion) are formed on a Si substrate. It is a thing.
  • a pupil filter according to the type of defect or the like is required, and a minute shutter having a dimension of 1 mm or less corresponding to various types of defects or the like is required. It is considered that various spatial filters can be formed by opening and closing such a shutter.
  • defects and wafer roughness which is detection noise, are discriminated by utilizing the spatial characteristics and polarization characteristics of various defect scattered lights on the pupil surface.
  • the possibilities were increased by spatial filters and polarizing filters.
  • the shape of the spatial filter that is advantageous for detection differs depending on the type of defect, etc.
  • multiple types of spatial filter and filter switching mechanism are required to improve the detection sensitivity of multiple types of defects. This is because the opening / closing location of the shutter can be selected by using the filter switching mechanism, and a plurality of types of spatial filters can be configured.
  • An object of the present invention is to prevent fatigue destruction of the shutter of a shutter array device (optical filtering device) used in an optical microscope, which is a component of a defect observation device, and to prolong the life of the shutter array device.
  • the optical filtering device of the present invention includes a shutter having a shaft portion and a structure that can be opened and closed, and a substrate having a shutter opening, and has a configuration in which a voltage is applied between the shutter and the substrate.
  • a shutter having a shaft portion and a structure that can be opened and closed
  • a substrate having a shutter opening
  • the present invention it is possible to prevent fatigue destruction of the shutter of the optical filtering device used in the optical microscope, which is a component of the defect observation device, and extend the life of the shutter array device.
  • FIG. 3A is a schematic enlarged view showing a state in which the shutters constituting the shutter array device of FIG. 3A are closed except for a part.
  • FIG. 3 is a schematic enlarged view showing a state in which all the shutters constituting the shutter array device of FIG. 3A are closed.
  • It is a figure which shows the spatial filter corresponding to the state of the shutter array device of FIG. 3A.
  • FIG. 4A is a cross-sectional view taken along the line BB of FIG. 4A.
  • FIG. 4A is a cross-sectional view taken along the line AA of FIG. 4A. It is a top view of the rack of FIG. 4A.
  • FIG. It is a top view which shows the shutter array of Example 4.
  • FIG. It is sectional drawing which shows the shutter array of Example 5.
  • FIG. 1 is a schematic configuration diagram showing a defect observation device.
  • the defect observation device 10 includes a scanning electron microscope 1002 (SEM), an optical microscope 1003 (defect detection unit), a control unit 1006, a terminal 1007, a recording device 1008, and a network 1009. ing.
  • the scanning electron microscope 1002 is installed in the vacuum chamber 1005 together with the stage 1004. Wafer 1001 is placed on the stage 1004. Wafer 1001 can be moved with a stage 1004 that is movable about the X and Y axes. This makes it possible to observe an arbitrary surface of the wafer 1001 with a scanning electron microscope 1002 and an optical microscope 1003.
  • the optical microscope 1003 includes a laser light source 1010, an objective lens 1013, an imaging lens 1015, and an imaging element 1016.
  • the objective lens 1013 is installed in the vacuum chamber 1005. Therefore, the vacuum sealing window 1014 is provided so that the light that has passed through the objective lens 1013 reaches the image sensor 1016.
  • a microlens array 1103, a shutter array device 1101 and a microlens array 1102 are installed between the vacuum sealing window 1014 and the imaging lens 1015 in this order from the vacuum sealing window 1014 side.
  • the light beam emitted from the laser light source 1010 passes through the vacuum sealing window 1011 and is configured to irradiate the upper surface of the wafer 1001 through the mirror 1012.
  • the light reflected on the upper surface of the wafer 1001 passes through the objective lens 1013 and the vacuum sealing window 1014 in order, passes through the microlens array 1103, the shutter array device 1101 and the microlens array 1102 in order, and is imaged by the imaging lens 1015. Then, it is detected by the image pickup element 1016.
  • the image sensor 1016 a two-dimensional CCD sensor, a line CCD sensor, a TDI sensor group in which a plurality of TDIs are arranged in parallel, a photodiode array, and the like are used.
  • CCD is an abbreviation for Charge-Coupled Device.
  • TDI is an abbreviation for Time Delay Integration.
  • the scanning electron microscope 1002 and the optical microscope 1003 are fixed so as to maintain an accurate distance.
  • the control unit 1006 includes a stage control circuit 1018, an SEM imaging system control circuit 1019, an image processing circuit 1020, an external input / output interface 1021, a central processing unit 1022 (CPU), and a memory 1023.
  • the stage control circuit 1018, the SEM imaging system control circuit 1019, and the image processing circuit 1020 are connected to the external input / output interface 1021, the central calculation unit 1022, and the memory 1023 via the bus 1024.
  • the stage control circuit 1018, the SEM imaging system control circuit 1019, and the image processing circuit 1020 are circuits for moving the wafer 1001, observing defects on the surface of the wafer 1001, and other operations.
  • the image processing circuit 1020 integrates the signals of the image acquired by the image sensor 1016, performs data conversion and the like, discriminates the type of defects and the like, and identifies the positions and dimensions thereof. Information on the results of discrimination, identification, etc. will be referred to as "defect information" in the present specification.
  • the defect information is input to the recording device 1008 or the memory 1023.
  • the memory 1023 is mainly used for temporary storage.
  • the recording device 1008 can be used to store and store the acquired defect information.
  • the stage control circuit 1018 controls the stage 1004 and the SEM imaging system control circuit 1019 controls the scanning electron microscope 1002 based on the defect information. Then, the control unit 1006 observes some or all of the defects detected by the optical microscope 1003 in detail, classifies the defects and the like, analyzes the cause of the defects, and the like. Further, the control unit 1006 also controls the focus and output of the SEM image, controls the analysis, analyzes the data obtained by the scanning electron microscope 1002, and corrects the positions of defects and the like obtained by the optical microscope 1003. Further, the control unit 1006 can also perform display on the terminal 1007, data transfer via the network 1009, and the like.
  • the terminal 1007 conditions for observing defects and the like are set. Further, in the terminal 1007, parameters for controlling the scanning electron microscope 1002, the optical microscope 1003, and the stage 1004 are set. Further, in the terminal 1007, settings related to the opening / closing operation of the shutter (described later) of the shutter array device 1101 are also made. Further, in the terminal 1007, the angle (opening angle) when the shutter is opened can be adjusted to an appropriate value. In this case, a method of adjusting the voltage applied to the shutter array device 1101 may be adopted while checking the image obtained by the image sensor 1016 into a pupil image on the terminal 1007. As a result, it is possible to prevent failures such as adhesion to the substrate and damage to the shaft portion of the shutter caused by excessive opening of the shutter.
  • a force acts as an elastic body that tries to return to the closed state against the stress in the open state of the shutter.
  • the opening angle is determined by the balance between this force and the electrostatic force for opening the shutter generated by applying the voltage. Therefore, the opening angle can be adjusted by adjusting the above voltage.
  • the upper limit of the shutter opening angle is determined by the above voltage.
  • FIG. 2 is a schematic configuration diagram showing an optical microscope which is a defect detection unit of a defect observation device.
  • the optical microscope 20 includes an image sensor 100 (sensor), an imaging lens 101, and an objective lens 102.
  • Microlens arrays 106 and 107 are installed between the imaging lens 101 and the objective lens 102.
  • a shutter array device 200 (optical filtering device) is installed between the microlens arrays 106 and 107.
  • the microlens arrays 106, 107 and the shutter array device 200 are installed near the pupil surface of the optical microscope 20.
  • the objective lens 102 is configured such that the light beam 300 radiated from the laser light source 103 to the wafer 104 is reflected on the surface of the wafer 104 and the reflected light 301 is incident on the wafer 104.
  • the light that has passed through the objective lens 102 passes through the pupil surface (Fourier transform surface) and the imaging lens 101, reaches the image pickup element 100, and is detected as an electrical signal.
  • the light beam 300 emitted from the laser light source 103 passes through the vacuum sealing window 351 and is reflected by the mirror 352 to irradiate the wafer 104.
  • the defect 108 When the defect 108 is present on the wafer 104, the light ray 300 that hits the defect 108 is reflected, and a reflected light 301 different from the usual one is generated.
  • the reflected light 301 can be detected by the image pickup device 100, and the data corresponding to the image of the defect 108 can be acquired by the image processing circuit 1020 of FIG. By moving the stage 105, the defect 108 existing on the surface of the wafer 104 can be found.
  • FIG. 3A is a schematic enlarged view showing a shutter array device and a microlens array.
  • the shutter array device 200 is installed between the microlens arrays 106 and 107. All shutters 220 of the shutter array device 200 are open. Therefore, the reflected light 302 passing through the shutter array device 200 converges and focuses at the shutter opening 304 to become the light 303.
  • FIG. 3B shows a state in which a part of the shutter 220 other than the shutter 220 is closed. Further, FIG. 3C shows a state in which all shutters 210 are closed. As described above, the plurality of shutters 210 and 220 have a configuration in which each of the shutters 210 and 220 can be opened and closed independently.
  • 3D, 3E and 3F show spatial filters corresponding to the states shown in FIGS. 3A, 3B and 3C, respectively.
  • 3D, 3E and 3F are views viewed from above or below the shutter 220.
  • the shutter closed state 211 is shown in black, and the shutter open state 221 is shown in white.
  • a plurality of types of spatial filters can be configured by individually ON / OFF controlling each pixel of the shutter array device 200.
  • the shutters 210 and 220 of the shutter array device 200 and the lenses of the microlens arrays 106 and 107 are arranged in 3 rows and 3 columns, but this is an example and is necessary. Depending on the situation, a larger matrix may be formed.
  • FIG. 4A is a perspective view showing the shutter array device of the first embodiment.
  • the shutter array device 200 shown in this figure has a shutter array 205, an electrode array 206, and a rack 260 (pedestal).
  • the shutter array 205 and the electrode array 206 have a substrate 201 and are fixed to the rack 260.
  • the shutter array 205 and the electrode array 206 each have a rectangular parallelepiped shape, and are installed on a slope having a concavo-convex structure provided on the rack 260.
  • the shutter array 205 and the electrode array 206 are installed on the slope of the rack 260.
  • the shutter array 205 and the electrode array 206 are configured to be inclined with respect to the bottom surface of the rack 260.
  • the substrate 201 is divided by the substrate division slit 202.
  • the shutter array 205 and the electrode array 206 are adhesively fixed on the adhesive surface 250 with a conductive adhesive to ensure electrical continuity.
  • the shutter array 205 and the electrode array 206 are adhesively fixed to the rack wiring 261 provided on the rack 260 and the adhesive surface 251 with a conductive adhesive, respectively, to ensure electrical continuity.
  • a conductive adhesive film, solder, or the like may be used, or a metal bond or the like using Au-Au, Cu-Cu, Cu-Sn, or the like may be used.
  • shutters 212 (opening and closing plates) are arranged in a matrix of 3 rows and 3 columns, and 3 electrode arrays 206 are arranged on both sides thereof, but the present invention is limited thereto.
  • the shutter 212 may be arranged in a matrix of 30 rows and 30 columns together with a large number of electrode arrays 206.
  • a plurality of shutters 212 are arranged so as to be adjacent to each other.
  • the shutter array 205 and the electrode array 206 have a rectangular parallelepiped shape in which one dimension (length, width, height, respectively) is approximately 1 mm ⁇ 3 mm ⁇ 1 mm.
  • FIG. 4B shows one shutter array
  • the shutter array 205 has an insulating layer 270 provided between one shutter support portion 203 in which three shutters 212 are arranged in a row, three substrates 201, and the shutter support portions 203 and the substrate 201. And have.
  • Substrate dividing slits 202a and 202b are provided between adjacent substrates 201.
  • the substrate 201 is divided by the substrate dividing slits 202a and 202b.
  • the insulating layer 270 is integrated in the same manner as the shutter support portion 203.
  • the insulating layer 270 insulates the shutter support portion 203 and the substrate 201 so that different voltages can be applied to each of them.
  • the shutter 212, the shutter support portion 203, and the substrate 201 are made of silicon (Si).
  • the insulating layer 270 is made of silica (SiO 2 ).
  • FIG. 4C shows one electrode array
  • the electrode array 206 has three electrode plates 207 that do not have a shutter and three substrates 201.
  • Substrate dividing slits 202a and 202b are provided between adjacent substrates 201.
  • the substrate 201 is divided by the substrate dividing slits 202a and 202b.
  • the electrode plate 207 is also divided by slits 204a and 204b.
  • the electrode array 206 is not provided with an insulating layer.
  • the substrate 201 and the electrode plate 207 are electrically connected to each other.
  • the substrate 201 and the electrode plate 207 are divided into three by the substrate dividing slits 202a and 202b and the slits 204a and 204b, and different voltages can be applied to these three.
  • the adjacent substrates 201 are connected with an insulating adhesive.
  • the electrode plate 207 can be used as a terminal for connecting the substrate 201 and the outside.
  • a wire 240 is connected to the end of the shutter support portion 203.
  • a wire 241 is connected to the electrode plate 207.
  • the wires 240 and 241 are fixed by wire bonding or the like. As a result, the voltage can be set to ON or OFF and applied for the opening / closing operation of the shutter 212.
  • FIG. 5 shows a BB cross section of FIG. 4A.
  • the rack 260 is provided with a plurality of rack openings 263 perpendicular to the bottom surface of the rack 260. Then, the shutter array 205 is installed so that the shutter opening 264 communicates with each rack opening 263. The shutter opening 264 is provided perpendicular to the upper surface of the shutter support 203.
  • the width of the rack opening 263 is 700 ⁇ m.
  • the width of the rack opening 263 is preferably 100 to 1000 ⁇ m.
  • the shutter 212 is parallel to the upper surface of the shutter support portion 203 in the closed state (shutter closed 223).
  • the shutter angle 280 opening angle
  • a rack insulating layer 262 is provided on the upper surface of the rack 260, and rack wiring 261 is formed on the surface of the rack insulating layer 262.
  • the rack wiring 261 and the rack insulating layer 262 are also provided between the shutter array 205 and the rack 260 and between the electrode array 206 and the rack 260.
  • the electrical connection between the rack wiring 261 and the substrate 201 is made via a substrate bottom surface 232 and a substrate side surface 233 using a conductive adhesive.
  • the rack 260 has a rack wiring 261 that is electrically connected to the substrate 201.
  • the lower end portion of the shutter 212 having an opening angle of less than 90 degrees and the inner wall surface of the substrate 201 facing the upper surface (right side surface in the drawing) of the shutter 212.
  • the distance between them is the smallest at the shutter opening 264.
  • the shaft portion of the shutter 212 protrudes above the rack opening 263.
  • the inner wall surface of the substrate 201 on the shaft portion side of the shutter 212 partially covers the rack opening 263.
  • the distance between the surface extending the upper surface of the shutter 212 downward and the lower end of the inner wall surface of the substrate 201 facing the upper surface of the shutter 212 is determined. It is smaller than the width of the rack opening 263 and the shutter opening 264. That is, the effective aperture ratio of the shutter array 205 is low.
  • the effective opening ratio is defined as a ratio (percentage) calculated with the width of the shutter opening 264 as the denominator and the above minimum distance as the numerator.
  • the light passing through the rack opening 263 and the shutter opening 264 is adjusted so as to converge to the above minimum distance or less and focus in a region where the width of the rack opening 263 or the shutter opening 264 is small.
  • the angle at which the light converges is such that the reflected light 302 and the light 303 do not collide with the inner wall surface of the substrate 201 and the shutter 212.
  • the inclination of the substrate 201 is small, that is, the inclination of the shutter opening 264 with respect to the rack opening 263 is small.
  • the shutter angle 280 is preferably in the range of 85 degrees to 60 degrees, more preferably in the range of 80 degrees to 60 degrees, and particularly preferably in the range of 75 degrees to 60 degrees.
  • the meaning of the lower limit value "60 degrees" in the above range is an effective aperture ratio in a configuration in which the inclination of the substrate 201 is 0 degrees, that is, in a configuration in which the inner wall surfaces of the rack opening 263 and the shutter opening 264 are parallel.
  • the value is 50% or more.
  • the effective opening ratio is less than 50%, it is desirable from the viewpoint that the degree of convergence of light passing through the rack opening 263 and the shutter opening 264 becomes a problem, and the distance between adjacent shutter openings 264 becomes large. No.
  • the upper limit of the shutter angle 280 can be a value obtained by subtracting the inclination of the substrate 201 from 90 degrees.
  • FIG. 6 shows the AA cross section of FIG. 4A.
  • FIG. 6 shows the states of the shutter open 213 and the shutter closed 223.
  • FIG. 7 is a top view of the rack 260 of FIG. 4A.
  • the rack wiring 261 is formed so as to electrically connect the upper surface edges of the rack openings 263 adjacent to each other in the lateral direction in the drawing, including the slope of the uneven structure provided on the rack 260. ..
  • An insulating portion 265 is provided between the adjacent rack wirings 261 in parallel with the rack wirings 261 so as not to be electrically conductive.
  • FIG. 8 is a cross-sectional view showing the shutter array device of the second embodiment.
  • the height of the substrate 201 is lower than that in the first embodiment shown in FIG.
  • Other configurations are the same as in FIG.
  • the length of the shutter opening 264 bent with respect to the rack opening 263 is shortened, and the opening area through which the optical axis passes at the shutter opening 213 can be widened. .. Further, even if the opening angle of the shutter 212 is further reduced, the opening area can be secured.
  • the electrode array 206 is formed by forming the rack wiring 261 so as to form an appropriate circuit and connecting wiring such as a wire to the shutter support portion 203 in order to change the potentials of the shutter support portion 203 and the shutter 212. Can be omitted.
  • FIG. 9 is a cross-sectional view showing the shutter array device of the third embodiment.
  • the height of the substrate 201 is lowered as in the second embodiment shown in FIG.
  • the ends of adjacent shutter arrays 205 are arranged so as to overlap each other.
  • the substrate 201 of the shutter array 205 is arranged so as to partially cover the upper part of the shutter support portion 203 of the adjacent shutter array 205.
  • a gap 290 is provided in a portion where the substrate 201 and the shutter support portion 203 overlap.
  • the electrode array 206 is also arranged so as to overlap in the same manner. Since the gap 290 is provided, the substrate 201 and the lower shutter support portion 203 are not in contact with each other. As a result, insulation can be ensured and short circuits can be prevented. Instead of providing the gap 290, an insulating material may be sandwiched.
  • the distance between adjacent shutter openings 264 can be set narrow.
  • the degree of integration of the shutter array 205 can be increased, and the pattern of the spatial filter can also be increased.
  • FIG. 10A shows a shutter array of a comparative example.
  • the shutter 212 shown in this figure is in a state of being opened too much and is in close contact with the inner wall surface 282 of the substrate 201. In this case, there is a concern that the attached shutter 212 will not be separated from the inner wall surface 282 and the opening / closing function cannot be obtained.
  • FIG. 10B shows the shutter array of Example 4.
  • the convex portion 281 is provided on the inner wall surface 282 of the substrate 201 so that the contact of the shutter 212 becomes a part. As a result, the shutter 212 can be prevented from being fixed in the open state. Further, the convex portion 281 sets an upper limit value of the opening angle of the shutter 212.
  • FIG. 5 and the like show a configuration in which the upper surface of the shutter array intersects the optical axis diagonally when the shutter 212 is closed
  • the upper surface of the shutter array is formed.
  • the shutter 212 may be configured to intersect with the optical axis substantially perpendicularly.
  • FIG. 10C is a top view of the shutter array of this embodiment.
  • Two convex portions 281 shown in this figure are provided in the vertical direction so as to support the shutter 212 with a small area when the shutter is opened 213.
  • FIG. 11 shows the shutter array of Example 5.
  • a convex portion 283 is provided on a part of the lower surface of the shutter 212. This prevents the shutter 212 from adhering to the substrate 201 and getting stuck when the shutter 212 is opened too much.
  • FIG. 12A shows the shutter array of Example 6.
  • the shutter opening 264 of the substrate 201 is tilted with respect to the bottom surface of the shutter support 203.
  • FIG. 12B shows a state in which the shutter array of this embodiment is installed in a rack.
  • the inner wall surface of the rack opening 263 is the shutter opening when the shutter array 205 is installed in the rack 260 at a predetermined angle. It is substantially parallel to the inner wall surface of 264. In other words, the rack opening 263 and the shutter opening 264 communicate with each other substantially in parallel. As a result, the rack opening 263 and the shutter opening 264 can be arranged substantially parallel to the optical axis.
  • the shutter 212 is the inner wall surface of the shutter opening 264 even when the opening angle of the shutter 212 is maximized.
  • the convex portion 281 of FIG. 10B or the convex portion 283 of FIG. 11 is provided, the convex portion 281 of FIG.
  • the spot diameter focused on each shutter 212 by the microlens array can be increased, and the design margin of the microlens can be increased. This also contributes to cost reduction of the microlens.
  • the shutter array of this embodiment can be formed by tilting the substrate 201 and setting it in the dry etching apparatus when the silicon of the substrate 201 is etched and removed by using the dry etching apparatus.
  • FIG. 13 is a top view showing the details of the shutter array of the seventh embodiment.
  • the shutter 2001 that opens and closes is supported by the shutter support portion 2002 that constitutes the same plane via the twist rod 284 (shaft portion).
  • the shutter 2001 is connected near the center of the torsion bar 284.
  • a slit 2003 is provided between the shutter 2001 and the shutter support portion 2002.
  • a slit 2004 is provided between the shutter support portion 2002 and the twist rod 284.
  • the twist rod 284 has a linear central axis and a square cross section, a rectangular shape, a circular shape, an elliptical shape, or the like. Mechanically, a circular shape is desirable, but from the viewpoint of ease of manufacture, a square shape or a rectangular shape is preferable.
  • the shutter 2001 When the shutter 2001 is opened, a torsional stress is generated on the torsion rod 284.
  • an electrostatic force accompanying the application of a voltage acts, the shutter 2001 opens, so that a torsional stress is generated.
  • the electrostatic force disappears, the shutter 2001 closes, and the torsional stress disappears.
  • the torsion rod 284 functions as a torsion rod spring (elastic body).
  • the shutter 2001 has a single door structure with a twist rod 284 as a shaft.
  • the opening angle of the shutter 2001 is preferably smaller than 90 degrees in consideration of fatigue fracture of the torsion rod 284 and its surroundings.
  • FIG. 14 is a top view showing the details of the shutter array of the eighth embodiment.
  • the shutter 2001 that opens and closes is supported by the shutter support portion 2002 that constitutes the same plane via the meander rod 285 (shaft portion).
  • a slit 2004 is provided between the shutter support portion 2002 and the meander rod 285.
  • the Mianda rod 285 has, for example, a sinusoidal shape or the like, and has a square cross section, a rectangular shape, a circular shape, an elliptical shape, or the like.
  • FIG. 15 schematically shows a cross section of the shutter array.
  • a voltage is applied to the shutter 212 so as to have a positive potential (V1) via the shutter support portion 203, and to the substrate 201 so as to have a negative potential (V2).
  • An electrostatic force is generated by the potential difference generated by this, and the shutter 212 opens.
  • the lower surface of the shutter 212 is positively charged, and the inner wall surface 282 of the substrate 201 is negatively charged. This causes the shutter 212 to rotate around the shaft, resulting in the shutter opening.
  • the applied voltage is 20 to 200V.
  • the present invention is not limited to the above example because it changes depending on the size of the shutter 212.
  • Shutter array, electrode array, rack, etc. are formed by combining surface oxidation treatment of silicon used in the semiconductor manufacturing process, photolithography, etching, vapor deposition, ion implantation, etc., and parts are assembled.
  • the shutter array device as an integral body may be manufactured.
  • 10 Defect observation device, 20: Optical microscope, 100: Imaging element, 101: Imaging lens, 102: Objective lens, 103: Laser light source, 104: Wafer, 106, 107, 1102: Microlens array, 108: Defect, 200, 1101: Shutter array device, 201: Substrate, 202, 202a, 202b: Substrate division slit, 203, 2002: Shutter support, 204a, 204b: Slit, 205: Shutter array, 206: Electrode array, 207: Electrode plate , 211: Shutter closed, 212, 220, 2001: Shutter, 221: Shutter open, 240, 241: Wire, 250, 251: Adhesive surface, 260: Rack, 261: Rack wiring, 263: Rack opening, 264 : Shutter opening, 265: Insulation, 270: Insulation layer, 281, 283: Convex, 282: Inner wall surface, 284: Twist rod, 285: Mi

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

La présente invention concerne un dispositif de filtrage de lumière comprenant un obturateur (212) qui a une partie d'axe et a une configuration pouvant être ouverte/fermée, et un substrat (201) qui a une partie d'ouverture d'obturateur (264), le dispositif de filtrage de lumière ayant une configuration dans laquelle une tension est appliquée entre l'obturateur (212) et le substrat (201), l'obturateur (212) tourne autour de la partie d'axe et se déplace vers la partie d'ouverture d'obturateur (264) et est ainsi amené dans un état d'ouverture, et l'angle d'ouverture (280) de l'obturateur est ajusté à moins de 90 degrés.　En conséquence, la fracture de fatigue de l'obturateur du dispositif de filtrage de lumière à utiliser pour un microscope optique, qui est un composant d'un appareil d'observation de défaut, est empêchée, et la durée de vie d'un dispositif de réseau d'obturateurs peut être prolongée.
PCT/JP2020/012940 2020-03-24 2020-03-24 Dispositif de filtrage de lumière, microscope optique et appareil d'observation de défaut WO2021192017A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/JP2020/012940 WO2021192017A1 (fr) 2020-03-24 2020-03-24 Dispositif de filtrage de lumière, microscope optique et appareil d'observation de défaut
JP2022509817A JP7385003B2 (ja) 2020-03-24 2020-03-24 光フィルタリングデバイス、光学顕微鏡及び欠陥観察装置
KR1020227030668A KR20220136419A (ko) 2020-03-24 2020-03-24 광 필터링 디바이스, 광학 현미경 및 결함 관찰 장치
TW110107649A TW202204883A (zh) 2020-03-24 2021-03-04 光學濾波裝置、光學顯微鏡及缺陷觀察裝置

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KR20240105544A (ko) * 2022-12-28 2024-07-08 주식회사 큐빛바이오 렌즈 모듈, 광학 장치 및 그를 이용한 3차원 영상 수집 방법

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JPS62289807A (ja) * 1986-05-22 1987-12-16 シ−メンス、アクチエンゲゼルシヤフト 光学式画像処理装置
JPH1039239A (ja) * 1996-07-18 1998-02-13 Ricoh Co Ltd 空間光変調素子
KR20060046844A (ko) * 2004-11-12 2006-05-18 한국과학기술원 가동 박막을 갖는 광 밸브 및 이를 이용한 디스플레이 장치
JP2014010371A (ja) * 2012-06-29 2014-01-20 Takahisa Yamaguchi 表示装置及び表示装置の製造方法

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JP2010113067A (ja) * 2008-11-05 2010-05-20 Olympus Corp 光偏向器アレイ
JP5867736B2 (ja) 2011-02-04 2016-02-24 株式会社日立製作所 光学フィルタリングデバイス、並びに欠陥検査方法及びその装置
WO2012105055A1 (fr) * 2011-02-04 2012-08-09 株式会社日立製作所 Procédé de filtrage optique, dispositif associé, procédé d'inspection de défaut de substrat et appareil associé
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JPS62289807A (ja) * 1986-05-22 1987-12-16 シ−メンス、アクチエンゲゼルシヤフト 光学式画像処理装置
JPH1039239A (ja) * 1996-07-18 1998-02-13 Ricoh Co Ltd 空間光変調素子
KR20060046844A (ko) * 2004-11-12 2006-05-18 한국과학기술원 가동 박막을 갖는 광 밸브 및 이를 이용한 디스플레이 장치
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WO2024009340A1 (fr) * 2022-07-04 2024-01-11 株式会社日立ハイテク Dispositif de filtrage optique et obturateur mems

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KR20220136419A (ko) 2022-10-07
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JP7385003B2 (ja) 2023-11-21

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