WO2021179886A1 - 反应腔室 - Google Patents

反应腔室 Download PDF

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Publication number
WO2021179886A1
WO2021179886A1 PCT/CN2021/076804 CN2021076804W WO2021179886A1 WO 2021179886 A1 WO2021179886 A1 WO 2021179886A1 CN 2021076804 W CN2021076804 W CN 2021076804W WO 2021179886 A1 WO2021179886 A1 WO 2021179886A1
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WIPO (PCT)
Prior art keywords
reaction chamber
ring
substrate
baffle ring
edge
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Application number
PCT/CN2021/076804
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English (en)
French (fr)
Inventor
何中凯
荣延栋
Original Assignee
北京北方华创微电子装备有限公司
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Application filed by 北京北方华创微电子装备有限公司 filed Critical 北京北方华创微电子装备有限公司
Priority to KR1020227030597A priority Critical patent/KR102563830B1/ko
Publication of WO2021179886A1 publication Critical patent/WO2021179886A1/zh
Priority to US17/941,923 priority patent/US20230002896A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Definitions

  • the invention relates to the technical field of semiconductor processing, in particular to a reaction chamber.
  • Tungsten plug is a process widely used in the semiconductor industry. It fills the via or trench with metal tungsten, and uses the good conductivity and anti-electromigration properties of metal tungsten to achieve Process requirements for electrical conduction between the front-end device and the back-end device.
  • FIG. 1 is a schematic diagram of the purge gas flow at the edge of the substrate in the chemical vapor deposition process in the prior art. As shown in FIG.
  • an upper baffle ring 6 and a lower baffle ring 7 are provided on the edge of the base 1 ,
  • the inner edge part of the upper baffle ring 6 shields the edge of the substrate 2 to a certain extent, and there is a gap between the substrate 2 and the substrate 2 in the vertical direction.
  • a purge air channel is formed between the upper baffle ring 6, the lower baffle ring 7, the base 1 and the substrate 2.
  • edge purge air flow is blown out from the air channel (pointed by the dashed arrow in Figure 1)
  • the reactants distributed in the area blocked by the upper baffle ring 6 on the surface of the substrate 2 are blown away, so that no film will be deposited in this area, so that the desired edge removal area can be formed at the edge of the surface of the substrate 2.
  • the residual gas after the reaction enters the exhaust port through the exhaust flow channel between the upper surface of the upper baffle ring 6 and the top of the reaction chamber, so as to be able to exit the reaction chamber.
  • the upper surface of the lower baffle ring 7 is usually higher than the upper surface of the substrate 2, resulting in the upper surface of the upper baffle ring 6 and the cavity of the reaction chamber.
  • the exhaust flow channel between the upper cover 51 of the chamber is narrow, and the flow rate of the process gas flowing therethrough is faster, so that the residence time at the edge of the substrate 2 is shorter, and the thickness of the film formed on the edge of the substrate 2 is thinner. , The overall film thickness uniformity on the substrate 2 is poor.
  • the present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a reaction chamber, including: a cavity and a base arranged in the cavity, the base including a substrate for carrying a substrate
  • the reaction chamber further includes:
  • the first stop ring, the first stop ring is arranged on the upper surface of the edge portion, and the first stop ring is arranged around the carrying portion, and the upper surface of the carrying portion is higher than the first stop The upper surface of the ring;
  • a second retaining ring, the second retaining ring is arranged on the upper surface of the first retaining ring, and the second retaining ring includes: a body portion and a side of the body portion away from the first retaining ring
  • the second preset vertical distance between the upper surface of the body portion and the upper surface of the carrying portion, and the second preset distance is less than or equal to the first preset vertical distance .
  • the shielding portion includes an outer ring portion, a flat portion, and an inner ring portion that are sequentially arranged in a direction close to the carrying portion;
  • the thickness of the inner ring portion gradually decreases, and the thickness of the outer ring portion gradually increases.
  • the longitudinal section of the shielding portion in the radial direction of the shielding portion is trapezoidal.
  • the inner ring portion, the outer ring portion, and the flat portion have the same size in the radial direction of the shielding portion.
  • first baffle ring and the second baffle ring are coaxially arranged.
  • the thickness of the body part is between 2 mm and 8 mm, and the thickness of the shielding part is between 0.7 mm and 2.7 mm.
  • the body part and the shielding part are formed as an integral structure.
  • the reaction chamber is a chemical vapor deposition chamber, and an air inlet channel is provided on the top wall of the cavity, and an exhaust channel is provided on the side wall of the cavity.
  • the embodiment of the present invention reduces the height of the second baffle ring as a whole, thereby increasing the size of the exhaust flow channel between the second baffle ring and the top of the reaction chamber, thereby reducing the flow through the edge of the substrate.
  • the flow rate of the process gas makes the flow rate of the process gas in the edge area above the surface of the substrate consistent with the flow rate of the process gas in other areas, so that the overall film thickness uniformity of the substrate can be improved.
  • FIG. 1 is a schematic diagram of a purge gas flow at the edge of a substrate in a chemical vapor deposition process in the prior art
  • Figure 2 is a graph of the thickness of the film on the substrate in the prior art
  • Figure 3a is a top view of a carrying device provided by an embodiment of the present invention.
  • Fig. 4 is a schematic diagram of a first baffle ring and a second baffle ring provided by an embodiment of the present invention
  • FIG. 5 is a comparison diagram of the retaining ring structure provided by the embodiment of the present invention and the retaining ring structure in the prior art;
  • Fig. 6 is a schematic diagram of a reaction chamber provided by an embodiment of the present invention.
  • CVD chemical vapor deposition
  • the chemical vapor deposition method can basically achieve microstructure (via and trench) metal filling.
  • the critical dimension (CD) of early semiconductor devices was relatively large, and the aspect ratio of holes or trenches was also relatively small. It is not a very serious challenge for the CVD process to fill such structures.
  • the key dimensions of semiconductor devices tend to be miniaturized.
  • tungsten plug process a microstructure with a small opening and a large aspect ratio has gradually become a difficulty in the process.
  • the metal tungsten filled with microstructures in the product is required to leave no pores or cavities as much as possible, and the impurities are as little as possible, and the resistivity is low.
  • the distance between the upper baffle ring 6 and the upper chamber cover 51 of the reaction chamber is relatively small, and is usually 10% to 10% narrower than the distance between the substrate 2 and the upper chamber cover 51 of the reaction chamber. 50%, which results in a narrower gas flow path formed between the upper baffle ring 6 and the upper cover 51 of the chamber, resulting in a faster flow rate of the process gas flowing through the gas flow path, and a shorter residence time of the process gas there. , which in turn leads to a thinner film formed on the edge of the substrate 2.
  • Figure 2 is a graph of the film thickness on the substrate in the prior art.
  • the dotted line represents the thickness distribution curve of the film deposited in different areas of the substrate 2 when the upper baffle ring 6 is set.
  • FIG. 3 is a partial schematic diagram of the reaction chamber provided by an embodiment of the present invention
  • FIG. 4 is a top view of a second stop ring provided by an embodiment of the present invention.
  • the reaction chamber includes: a cavity 5 and a base 1 arranged in the cavity 5, wherein the base 1 includes a supporting portion 11 for supporting the substrate 2 and a surrounding supporting portion 11 is provided with an edge portion 12, and the height of the upper surface of the carrying portion 11 is greater than the height of the upper surface of the edge portion 12.
  • the reaction chamber further includes: a first baffle ring 3 and a second baffle ring 4, wherein the first baffle ring 3 is provided on the upper surface of the edge portion 12, and the first baffle ring 3 is provided around the bearing portion 11, and the bearing portion 11
  • the upper surface of is higher than the upper surface of the first retaining ring 3.
  • the second retaining ring 4 is provided on the upper surface of the first retaining ring 3 (ie, the side facing away from the edge portion 12).
  • the second retaining ring 4 includes a body portion 41 and a body portion 41 disposed on the body portion 41 away from the first retaining ring
  • the dashed line is the edge contour line of the substrate 2
  • the area between the edge contour line and the inner peripheral edge line of the shielding portion 42 is the area where the substrate 2 is not shielded by 42.
  • the embodiment of the present invention reduces the height of the second baffle ring 4 as a whole, thereby increasing the exhaust gas between the second baffle ring 4 and the top of the reaction chamber
  • the size of the flow channel can further reduce the flow rate of the process gas flowing through the edge of the substrate, so that the flow rate of the process gas in the edge area above the surface of the substrate is consistent with the flow rate of the process gas in other areas, thereby improving the overall film thickness uniformity of the substrate.
  • the shielding portion 42 can be arranged on the side of the main body 41 close to the carrying portion 11, and the thickness of the shielding portion 42 is as small as possible, so that the overall thickness of the second baffle ring 4 can be minimized.
  • a purge air channel can be formed between the lower surface of the substrate 2 and the outer peripheral surface of the substrate 2 and the edge of the upper surface.
  • the purge gas can be output to the edge of the upper surface of the substrate 2 after passing through the purge air channel.
  • the process gas at the location is blown away to prevent the process gas from being deposited at the edge, so that a de-edge area can be formed at the edge of the upper surface of the substrate 2.
  • a channel for conveying purge gas is provided in the edge portion 12, and the air outlet of the channel is located on the upper surface of the edge portion 12 and between the inner peripheral surface of the first baffle ring 3 and the outer peripheral surface of the carrying portion 11. , Used to deliver the purge gas to the above purge air passage.
  • the base 1 may be connected to a driving mechanism, and the driving mechanism is used to drive the base 1 to lift and/or rotate.
  • the second baffle ring 4 can be fixed at a predetermined position in the reaction chamber.
  • the first baffle ring 3 is lowered with the base 1, and the second baffle ring 4 can be kept in the original position.
  • the baffle ring 3 and the second baffle ring 4 are separated from each other, so that the substrate 2 can be placed on the upper surface of the base 1 without being blocked by the second baffle ring 4.
  • the first baffle ring 3 rises with the base 1 until it comes into contact with the second baffle ring 4.
  • the shielding portion 42 of the second baffle ring 4 can cover the upper surface of the substrate 2 At the edge of the, so that the deposition process can be carried out.
  • first preset vertical distance between the lower surface of the shielding portion 42 and the upper surface of the carrying portion 11.
  • the lower surface of the shielding portion 42 is the surface of the shielding portion 42 facing the main body portion 41
  • the upper surface of the carrying portion 11 is the carrying surface for carrying the substrate 2.
  • the above-mentioned first preset vertical distance may be greater than the thickness of the substrate 2 to be carried, so that when the base 1 is in the process position and the second baffle ring 4 is in contact with the first baffle ring 3, the protruding part of the shielding portion 42 A gap is left between the lower surface of the substrate 2 and the upper surface of the substrate 2 to facilitate the purge gas to flow out of the gap.
  • the second predetermined vertical distance between the upper surface of the body portion 41 and the upper surface of the carrying portion 11, and the second predetermined vertical distance is less than or equal to the first predetermined vertical distance.
  • the upper surface of the main body 41 is a surface away from the first baffle ring 3. Since the second preset vertical distance is less than or equal to the first preset vertical distance, the upper surface of the main body 41 is not higher than the shielding part.
  • the lower surface of 42 can thereby increase the width of the gas flow channel formed between the upper surface of the main body 41 and the upper cover 51 of the chamber, thereby further reducing the flow rate of the process gas.
  • the body portion 41 and the shielding portion 42 of the second baffle ring 4 are an integral structure to facilitate processing and facilitate the formation of a purge air passage.
  • FIG. 5 is a cross-sectional view of FIG. 4 along the section line AA'.
  • the thickness of the inner ring portion 421 gradually decreases, and the thickness of the outer ring portion 423 gradually increases.
  • the thickness of the flat portion 422 is substantially the same, that is, the upper surface of the flat portion 422 is substantially flat.
  • the longitudinal section of the entire shielding portion 42 in its radial direction is trapezoidal.
  • the inner ring portion 421, the outer ring portion 423, and the flat portion 422 have the same size in the radial direction of the shielding portion 42, so that the longitudinal section of the entire shielding portion 42 in the radial direction can be formed isosceles Trapezoid.
  • FIG. 6 is a comparison diagram of the baffle ring structure provided by the embodiment of the present invention and the baffle ring structure in the prior art.
  • the left diagram in FIG. 6 shows the upper baffle ring 6 and the lower baffle ring in the prior art. 7.
  • the right figure in Fig. 6 shows the first baffle ring 3 and the second baffle ring 4 provided by the embodiment of the present invention.
  • the upper baffle ring 6 in the prior art It includes a first part 61 arranged on the outside and a second part 62 arranged on the inside.
  • the thickness of the first part 61 is approximately the same in the direction approaching the carrying part 11; the thickness of the second part 62 gradually decreases in the direction approaching the carrying part 11.
  • the angle between the inclined surface of the second part 62 and the lower surface is ⁇
  • the distance between the lower surface of the upper baffle ring 6 and the upper surface of the edge portion 12 is m
  • the thickness of the first part 61 of the upper baffle ring 6 is b.
  • the radial width of the lower baffle ring 7 is h
  • the radial width of the second portion 62 is k.
  • the distance between the upper surface of the upper baffle ring 6 and the upper surface of the edge portion 12 is b+m.
  • the longitudinal section of the shielding portion 42 in the embodiment of the present invention in the radial direction is an isosceles trapezoid.
  • the two bottom angles of the isosceles trapezoid are both ⁇ , and the shielding portion 42
  • the distance between the lower surface and the upper surface of the edge portion 12 is m
  • the thickness of the first retaining ring 3 is a
  • the radial width of the second baffle ring 4 is h
  • the radial width of the shielding portion 42 is k
  • the radial width e of the inner ring portion 421, the radial width f of the flat portion 422, and the radial width f of the outer ring portion 423 The width g is the same, equal to 1/3k.
  • the radial width e of the inner ring portion 421, the radial width f of the flat portion 422, and the radial width g of the outer ring portion 423 may be set between 1 mm and 3 mm, and the second retaining ring 4
  • the thickness of the body portion 41 can be set between 2mm and 8mm, preferably, can be set between 3mm and 4mm, the thickness of the shielding portion 42 can be set between 0.7mm and 2.7mm, and the upper surface of the shielding portion 42 can be set between the base and the base.
  • the distance between the upper surfaces of the sheets 2 can be set to be less than 2 mm, preferably, it can be set to be less than 1 mm.
  • the size of the exhaust flow channel between the second retaining ring 4 and the upper chamber cover 51 of the reaction chamber can be increased by 10% to that of the prior art. 50%, this size makes the distance between the second retaining ring 4 and the upper chamber cover 51 close to the distance between the substrate 2 and the upper chamber cover 51, so that the edge area of the upper surface of the substrate 2 can be improved. There is a problem of the difference in the flow rate of the process gas between the zones.
  • the first baffle ring 3 and the second baffle ring 4 are coaxially arranged.
  • a positioning mechanism can be provided between the first baffle ring 3 and the second baffle ring 4, so that the first baffle ring 3 and the second baffle ring 4 are always kept concentrically arranged during installation.
  • the reaction chamber further includes a heating element for heating the susceptor.
  • a heating element for heating the susceptor.
  • the substrate 2 on the susceptor can reach the reaction temperature, so that the substrate 2 can react with the process gas to complete the required process.
  • the heating element may include a heating wire located in the base.
  • the reaction chamber may be a chemical vapor deposition chamber.
  • the top wall of the cavity 5 is provided with an air inlet channel, and the side wall of the cavity 5 is provided with an exhaust channel.
  • the cavity 5 may include a side wall 52 and an upper chamber cover 51 provided on the top of the side wall 52.
  • the upper chamber cover 51 is used as the top wall of the cavity 5 and is used to transport process gas into the reaction chamber.
  • the gas inlet passage may be a through hole provided in the upper cover 51 of the chamber, and the gas inlet passage may be arranged above the substrate 2 so that the process gas can be transported to the upper surface of the substrate 2 after passing through the gas inlet passage.
  • the exhaust passage may be a through hole provided on the side wall 52, and the height of the exhaust passage may be lower than the height of the second baffle ring 4.
  • the process gas and the carrier gas are delivered to the upper surface of the substrate 2 through the gas inlet passage in the upper cover 51 of the chamber, and the process gas reacts on the upper surface of the substrate 2, thereby depositing metal on the upper surface of the substrate 2.
  • the purge gas passes on the inner circumferential surface of the first baffle ring 3, the inner circumferential surface of the body portion 41 of the second baffle ring 4, the upper surface of the edge portion 12, the outer circumferential surface of the bearing portion 11, and the protrusion of the shielding portion 42 Part of the lower surface and the purge air passage formed between the outer peripheral surface and the edge of the upper surface of the substrate 2 is output to the edge of the upper surface of the substrate 2 and blows away the process gas at the edge.
  • Metal tungsten will not be deposited on the edge of the upper surface of the substrate 2, so that a circle of edge removal area is formed at the edge of the upper surface of the substrate 2.
  • the carrier gas, the residual process gas and the by-product gas generated by the reaction all flow outward through the exhaust flow passage between the second baffle ring 4 and the upper cover 51 of the chamber, and finally exhaust through the exhaust passage on the side wall 52 Reaction chamber.

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Abstract

本发明提供了一种反应腔室，包括：腔体（5）和设置在腔体（5）内的基座（1），基座（1）包括用于承载基片（2）的承载部（11）和环绕承载部（11）设置的边缘部（12），承载部（11）的上表面的高度大于边缘部（12）的上表面的高度，其中，反应腔室还包括：第一挡环（3），该第一挡环（3）设置在边缘部（12）的上表面，且该第一挡环（3）环绕承载部（11）设置，承载部（11）的上表面高于第一挡环（3）的上表面；第二档环（4），该第二挡环（4）设置在第一挡环（3）的上表面，且该第二挡环（4）包括：本体部（41）和设置在本体部（41）远离第一挡环（3）一侧的遮挡部（42），该遮挡部（42）突出于第二挡环（4）与承载部（11）相对的表面，遮挡部（42）用于遮挡基片（2）的上表面的边缘处。本发明提供的反应腔室，可以使基片（2）所在区域的工艺气体流速更均匀，提高基片（2）整体的膜厚均匀性。

Description

反应腔室 技术领域
本发明涉及半导体加工技术领域，具体涉及一种反应腔室。
背景技术
钨塞(W-plug)是在半导体行业中广泛应用的一道工艺，它将金属钨填充于孔洞(Via)或沟槽(Trench)中，利用金属钨的良好导电性和抗电迁移特性，实现前道器件与后道器件之间电导通的工艺需求。
当前行业中采用化学气相沉积(Chemical Vapor Deposition，简称CVD)法进行钨的沉积，目前，为避免工艺过程中钨在基片边缘沉积，即，在基片边缘留有去边(Edge exclusion)区域，故需要在基片边缘增加边缘吹扫(Edge purge)气流。图1为现有技术中的化学气相沉积工艺中基片边缘的吹扫气流的示意图，如图1所示，在进行工艺时，在基座1边缘设置有上挡环6和下挡环7，上挡环6的内缘部分对基片2的边缘有一定的遮挡，且在垂直方向上与基片2之间留有空隙。于是在上挡环6、下挡环7、基座1和基片2之间形成了吹扫气道，当边缘吹扫气流从该气道吹出时(沿图1中虚线箭头所指)，分布在基片2表面被上挡环6遮挡的区域的反应物被吹走，因此该区域不会沉积薄膜，由此则可以在基片2表面边缘处形成所需要的去边区域。而反应后的残余气体经过上挡环6的上表面与反应腔室顶部之间的排气流道进入排气口，以能够排出反应腔室。
然而，为使上挡环6可以位于基片2表面上方以进行遮挡，下挡环7的上表面通常高于基片2的上表面，导致上挡环6的上表面与反应腔室的腔室上盖51之间的排气流道较窄，流经此处的工艺气体的流速较快，从而在基片2边缘停留时间较短，进而导致基片2边缘上成膜的厚度较薄，基片2上整 体的膜厚均匀性较差。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种反应腔室，包括：腔体和设置在所述腔体内的基座，所述基座包括用于承载基片的承载部和环绕所述承载部设置的边缘部，所述承载部的上表面的高度大于所述边缘部的上表面的高度，所述反应腔室还包括：
第一挡环，所述第一挡环设置在所述边缘部的上表面，且所述第一挡环环绕所述承载部设置，且所述承载部的上表面高于所述第一挡环的上表面；
第二挡环，所述第二挡环设置在所述第一挡环的上表面，且所述第二挡环包括：本体部和设置在所述本体部远离所述第一挡环一侧的遮挡部，其中，所述遮挡部突出于所述第二挡环与所述承载部相对的表面，所述遮挡部用于遮挡所述基片的上表面的边缘处。
可选地，所述遮挡部的下表面与所述承载部的上表面之间具有第一预设竖直间距。
可选地，所述本体部的上表面与所述承载部的上表面之间具有第二预设竖直间距，且所述第二预设间距小于或等于所述第一预设竖直间距。
可选地，所述遮挡部包括沿靠近所述承载部的方向依次设置的：外环部、平坦部和内环部；
沿靠近所述承载部的方向，所述内环部的厚度逐渐减小，所述外环部的厚度逐渐增大。
可选地，所述遮挡部在所述遮挡部的径向上的纵截面为梯形。
可选地，所述内环部、所述外环部和所述平坦部在所述遮挡部径向上的尺寸相同。
可选地，所述第一挡环和所述第二挡环同轴设置。
可选地，所述本体部的厚度在2mm至8mm之间，所述遮挡部的厚度在0.7mm至2.7mm之间。
可选地，所述本体部和所述遮挡部形成为一体结构。
可选地，所述反应腔室为化学气相沉积腔室，且所述腔体的顶壁上设置有进气通道，所述腔体的侧壁上设置有排气通道。
本发明具有以下有益效果：
采用本发明实施例提供的承载装置，由于承载部的上表面高于第一挡环的上表面，这使得第二挡环的下表面也低于承载部的上表面，相较于现有技术而言，本发明实施例在整体上降低了第二挡环的高度，从而增加了第二挡环与反应腔室顶部之间的排气流道的尺寸，进而可以降低流经基片边缘的工艺气体流速，使基片表面上方边缘区域的工艺气体流速与其他区域的工艺气体流速一致，从而可以提高基片整体的膜厚均匀性。
附图说明
附图是用来提供对本发明的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明，但并不构成对本发明的限制。在附图中：
图1为现有技术中的化学气相沉积工艺中基片边缘的吹扫气流的示意图；
图2为现有技术中基片上的薄膜厚度曲线图；
图3a为本发明实施例提供的承载装置的俯视图；
图3b为图3a沿剖线A-A’的剖视图；
图4为本发明实施例提供的第一挡环和第二挡环的示意图；
图5为本发明实施例提供的挡环结构与现有技术中的挡环结构的对比图；
图6为本发明实施例提供的反应腔室的示意图。
具体实施方式
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。
当前行业中主流的是采用化学气相沉积(Chemical Vapor Deposition，以下简称CVD)法进行金属钨的沉积，化学气相沉积法基本能够很好的实现微结构(Via and Trench)的金属填充。早期的半导体器件的关键尺寸(Critical Dimension，简称CD)较大，孔洞或沟槽的深宽比也较小，对于CVD工艺来说填充这样的结构并不是十分严峻的挑战。随着半导体技术的进步，半导体器件的关键尺寸趋于小型化，对于钨塞工艺来说，开口小、深宽比大的微结构渐渐成为了工艺中的难点。产品中要求微结构填充的金属钨尽可能不留孔隙或空洞，并且杂质尽量少，电阻率较低。
如图1所示，上挡环6与反应腔室的腔室上盖51之间的距离较小，通常比基片2与反应腔室的腔室上盖51之间的距离窄10％至50％，这导致上挡环6与腔室上盖51之间形成的气体流道较窄，从而导致流经该气体流道的工艺气体的流速变快，工艺气体在该处停留时间较短，进而导致基片2边缘上成膜的厚度较薄。
图2为现有技术中基片上的薄膜厚度曲线图，如图2所示，其中虚线表示设置上挡环6时在基片2的不同区域沉积的薄膜厚度分布曲线，实线表示未设置上挡环6时在基片2的不同区域沉积的薄膜厚度分布曲线。从图2中可以看出，未设置上挡环6时，薄膜厚度曲线较为平坦，即基片2整个表面上薄膜的厚度较为均匀；而设置有上挡环6时，在基片2上半径大于135mm的区域，薄膜厚度呈现急剧下降的趋势，即基片2整个表面上薄膜的厚度均匀性较差。
为了解决上述问题，本发明实施例提供一种反应腔室，图3为本发明实施例提供的反应腔室的局部示意图，图4为本发明实施例提供的第二档环的俯视图。结合图3和图4所示，反应腔室包括：腔体5和设置在该腔体5内的基座1，其中，基座1包括用于承载基片2的承载部11和环绕承载部11设置的边缘部12，并且该承载部11的上表面的高度大于边缘部12的上表面的高度。
反应腔室还包括：第一挡环3和第二挡环4，其中，第一挡环3设置在边缘部12的上表面，且第一挡环3环绕承载部11设置，并且承载部11的上表面高于第一挡环3的上表面。第二挡环4设置在第一挡环3的上表面(即，背离边缘部12的一侧)，该第二挡环4包括：本体部41和设置在该本体部41远离第一挡环3一侧的遮挡部42，其中，该遮挡部42突出于第二挡环4与承载部11相对的表面，遮挡部42用于遮挡基片2的上表面的边缘处。如图4所示，虚线为基片2的边缘轮廓线，位于该边缘轮廓线与遮挡部42的内周边缘线之间的区域即为基片2被遮挡不42遮挡的区域。
由于承载部11的上表面高于第一挡环3的上表面，这使得第二挡环4的下表面也低于承载部11的上表面，相较于图1中上挡环6整个下表面均高于承载部11的上表面的方案而言，本发明实施例在整体上降低了第二挡环4的高度，从而增加了第二挡环4与反应腔室顶部之间的排气流道的尺寸，进而可以降低流经基片边缘的工艺气体流速，使基片表面上方边缘区域的工艺气体流速与其他区域的工艺气体流速一致，从而可以提高基片整体的膜厚均匀性。
在本实施例中，遮挡部42可以设置在本体部41上靠近承载部11的一侧，且使遮挡部42的厚度尽量小，从而可以最大程度地减小第二挡环4的整体厚度。
如图3所示，第一挡环3的内周面、第二挡环4的本体部41的内周面、 边缘部12的上表面、承载部11的外周面、遮挡部42的突出部分的下表面以及基片2的外周面和上表面边缘处之间可以形成吹扫气道，吹扫气体经过该吹扫气道后可以输出至基片2的上表面的边缘处，将该边缘处的工艺气体吹走，防止工艺气体在该边缘处沉积，从而使基片2的上表面的边缘处可以形成去边区域。容易理解，在边缘部12中设置有用于输送吹扫气体的通道，该通道的出气口位于边缘部12的上表面，以及第一挡环3的内周面与承载部11的外周面之间，用以将吹扫气体输送至上述吹扫气道中。
在一些具体实施例中，基座1可以连接驱动机构，驱动机构用于驱动基座1升降和/或旋转。第二挡环4可以固定在反应腔室中的预定位置，当基座1下降时，第一挡环3随基座1下降，而第二挡环4可以保持在原始位置，此时第一挡环3和第二挡环4相互分离，以便于将基片2放置在基座1的上表面，而不会受到第二挡环4的阻挡。当基座1上升至工艺位时，第一挡环3随基座1上升，直至与第二挡环4相接触，此时第二挡环4的遮挡部42可以遮挡基片2的上表面的边缘处，从而可以进行沉积工艺。
在一些具体实施例中，遮挡部42的下表面与承载部11的上表面之间具有第一预设竖直间距。其中，遮挡部42的下表面为遮挡部42朝向本体部41的表面，承载部11的上表面为用于承载基片2的承载面。上述第一预设竖直间距可以大于待承载的基片2的厚度，从而在基座1处于工艺位，且第二挡环4与第一挡环3相接触时，遮挡部42的突出部分的下表面与基片2的上表面之间留有间隙，以利于吹扫气体从该间隙中流出。
在一些具体实施例中，本体部41的上表面与承载部11的上表面之间具有第二预设竖直间距，且第二预设竖直间距小于或等于第一预设竖直间距。其中，本体部41的上表面为远离第一挡环3的表面，由于第二预设竖直间距小于或等于第一预设竖直间距，这使得本体部41的上表面不高于遮挡部42的下表面，从而可以增大本体部41的上表面与腔室上盖51之间形成的气体 流道的宽度，进而进一步降低工艺气体的流速。
在一些具体实施例中，第二挡环4的本体部41和遮挡部42为一体结构，以便于加工，且有利于形成吹扫气道。
图5为图4沿剖线A-A’的剖视图，结合图3至图5所示，遮挡部42包括沿靠近承载部11的方向依次设置的：外环部423、平坦部422和内环部421。沿靠近承载部11的方向，内环部421的厚度逐渐减小，外环部423的厚度逐渐增大。可选的，沿靠近承载部11的方向，平坦部422的厚度大致相同，即，平坦部422的上表面大致平坦。通过使遮挡部42的内环部421和外环部423的厚度逐渐变化，可以减小在工艺气体流经遮挡部42上方时，遮挡部42对工艺气体的阻力。
在一些具体实施例中，整个遮挡部42在其径向上的纵截面为梯形。进一步地，如图5所示，内环部421、外环部423和平坦部422在遮挡部42的径向上的尺寸相同，从而可以使整个遮挡部42在其径向上的纵截面形成等腰梯形。
具体地，图6为本发明实施例提供的挡环结构与现有技术中的挡环结构的对比图，图6中的左图示出了现有技术中的上挡环6和下挡环7，图6中的右图示出了本发明实施例提供的第一挡环3和第二挡环4，结合图1和图6中左图所示，现有技术中的上挡环6包括设置在外侧的第一部分61和设置在内侧的第二部分62，第一部分61的厚度沿靠近承载部11的方向大致相同；第二部分62的厚度沿靠近承载部11的方向逐渐减小。第二部分62的倾斜面与下表面之间的夹角为α，上挡环6的下表面与边缘部12的上表面之间的距离为m，上挡环6的第一部分61的厚度为b，下挡环7的径向宽度为h，第二部分62的径向宽度为k。综上，上挡环6的上表面与边缘部12的上表面之间的距离为b+m。
结合图3和图6中右图所示，本发明实施例中的遮挡部42在其径向上 的纵截面为等腰梯形，该等腰梯形的两个底角均为α，遮挡部42的下表面与边缘部12的上表面之间的距离为m，第一挡环3的厚度为a，本体部41的厚度为b，其中，m-a＝b。遮挡部42的厚度为c，其中，b-c＝d。第二挡环4的径向宽度为h，遮挡部42的径向宽度为k，其中，内环部421的径向宽度e、平坦部422的径向宽度f以及外环部423的径向宽度g均相同，均等于1/3k，综上，本发明实施例中的第二挡环4的上表面与边缘部12的上表面的距离为a+b+c＝m+c。
由于现有技术中，上挡环6的上表面与边缘部12的上表面的距离为x＝b+m，而在本发明实施例中，第二挡环4的上表面与边缘部12的上表面的距离为y＝m+c，x-y＝b-c＝d，可见，本发明实施例中的第二挡环4的最高点与边缘部12的上表面之间的距离小于现有技术中的上挡环6的最高点与边缘部12的上表面之间的距离，且二者之间的距离之差为d。
在本发明实施例中，内环部421的径向宽度e、平坦部422的径向宽度f以及外环部423的径向宽度g可以设置在1mm至3mm之间，第二挡环4的本体部41的厚度可以设置在2mm至8mm之间，优选地，可以设置在3mm至4mm之间，遮挡部42的厚度可以设置在0.7mm至2.7mm之间，遮挡部42的上表面与基片2的上表面之间的距离可以设置为小于2mm，优选地，可以设置为小于1mm。通过调整d的大小(如使d＝1/3b)，可以使第二挡环4与反应腔室的腔室上盖51之间的排气流道的尺寸相对于现有技术增加10％～50％，该尺寸使第二挡环4和腔室上盖51之间的距离与基片2和腔室上盖51之间的距离相近，从而可以改善基片2上表面的边缘区域与其他区域之间的工艺气体流速存在差异的问题。
在一些具体实施例中，第一挡环3和第二挡环4同轴设置。具体地，可以通过在第一挡环3和第二挡环4之间设置定位机构，使第一挡环3和第二挡环4在安装时始终保持同心设置。
在一些具体实施例中，反应腔室还包括：加热件，该加热件用于加热基座。通过加热件将基座加热，可以使基座上的基片2达到反应温度，从而使基片2与工艺气体发生反应，完成所需的工艺。其中，加热件可以包括位于基座内的加热丝。
在一些具体实施例中，反应腔室可以为化学气相沉积腔室，如图3所示，腔体5的顶壁上设置有进气通道，腔体5的侧壁上设置有排气通道。
具体地，腔体5可以包括侧壁52和设置在侧壁52顶部的腔室上盖51，腔室上盖51即用作腔体5的顶壁，用于向反应腔室内输送工艺气体的进气通道可以是设置在腔室上盖51中的通孔，进气通道可以设置在基片2的上方，以使工艺气体经过进气通道后可以被输送至基片2的上表面。排气通道可以是设置在侧壁52上的通孔，排气通道的高度可以低于第二挡环4的高度。
下面以在基片2上沉积金属钨的过程为例对本发明实施例提供的反应腔室的工作过程进行解释说明。
具体地，工艺气体和载气通过腔室上盖51中的进气通道输送至基片2的上表面，工艺气体在基片2的上表面发生反应，从而在基片2的上表面沉积金属钨，吹扫气体经过在第一挡环3的内周面、第二挡环4的本体部41的内周面、边缘部12的上表面、承载部11的外周面、遮挡部42的突出部分的下表面以及基片2的外周面和上表面边缘处之间形成的吹扫气道输出至基片2的上表面的边缘处，并将位于该边缘处的工艺气体吹走，因此，基片2的上表面的边缘处不会沉积金属钨，从而在基片2的上表面的边缘处形成一圈去边区域。载气、残余的工艺气体以及反应生成的副产物气体等均经由第二挡环4与腔室上盖51之间的排气流道向外流动，最后经由侧壁52上的排气通道排出反应腔室。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而 言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (10)

  1. 一种反应腔室，包括：腔体和设置在所述腔体内的基座，所述基座包括用于承载基片的承载部和环绕所述承载部设置的边缘部，所述承载部的上表面的高度大于所述边缘部的上表面的高度，其特征在于，所述反应腔室还包括：
    第一挡环，所述第一挡环设置在所述边缘部的上表面，且所述第一挡环环绕所述承载部设置，所述承载部的上表面高于所述第一挡环的上表面；
    第二挡环，所述第二挡环设置在所述第一挡环的上表面，且所述第二挡环包括：本体部和设置在所述本体部远离所述第一挡环一侧的遮挡部，其中，所述遮挡部突出于所述第二挡环与所述承载部相对的表面，所述遮挡部用于遮挡所述基片的上表面的边缘处。
  2. 根据权利要求1所述的反应腔室，其特征在于，所述遮挡部的下表面与所述承载部的上表面之间具有第一预设竖直间距。
  3. 根据权利要求2所述的反应腔室，其特征在于，所述本体部的上表面与所述承载部的上表面之间具有第二预设竖直间距，且所述第二预设间距小于或等于所述第一预设竖直间距。
  4. 根据权利要求1所述的反应腔室，其特征在于，所述遮挡部包括沿靠近所述承载部的方向依次设置的：外环部、平坦部和内环部；
    沿靠近所述承载部的方向，所述内环部的厚度逐渐减小，所述外环部的厚度逐渐增大。
  5. 根据权利要求4所述的反应腔室，其特征在于，所述遮挡部在所述遮挡部径向上的纵截面为梯形。
  6. 根据权利要求4所述的反应腔室，其特征在于，所述内环部、所述外环部和所述平坦部在所述遮挡部的径向上的尺寸相同。
  7. 根据权利要求1至6中任意一项所述的反应腔室，其特征在于，所述第一挡环和所述第二挡环同轴设置。
  8. 根据权利要求1至6中任意一项所述的反应腔室，其特征在于，所述本体部的厚度在2mm至8mm之间，所述遮挡部的厚度在0.7mm至2.7mm之间。
  9. 根据权利要求1至6中任意一项所述的反应腔室，其特征在于，所述本体部和所述遮挡部形成为一体结构。
  10. 根据权利要求1至6中任意一项所述的反应腔室，其特征在于，所述反应腔室为化学气相沉积腔室，且所述腔体的顶壁上设置有进气通道，所述腔体的侧壁上设置有排气通道。
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