CN111364022A - 反应腔室 - Google Patents

反应腔室 Download PDF

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CN111364022A
CN111364022A CN202010161690.4A CN202010161690A CN111364022A CN 111364022 A CN111364022 A CN 111364022A CN 202010161690 A CN202010161690 A CN 202010161690A CN 111364022 A CN111364022 A CN 111364022A
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ring
reaction chamber
baffle ring
substrate
edge
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CN111364022B (zh
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何中凯
荣延栋
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Priority to PCT/CN2021/076804 priority patent/WO2021179886A1/zh
Priority to KR1020227030597A priority patent/KR102563830B1/ko
Priority to US17/941,923 priority patent/US20230002896A1/en
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Abstract

本发明提供了一种反应腔室，包括：腔体和设置在腔体内的基座，基座包括用于承载基片的承载部和环绕承载部的边缘部，承载部的上表面的高度大于边缘部的上表面的高度，其中，反应腔室还包括：第一挡环，所述第一挡环设置在所述边缘部的上表面且环绕所述承载部设置，且所述承载部的上表面高于所述第一挡环的上表面；第二档环，第二挡环设置在第一挡环背离边缘部的一侧，且包括：本体部和设置在本体部远离第一挡环一侧的遮挡部，遮挡部突出于第二挡环靠近承载部的表面，遮挡部用于遮挡基片的边缘。本发明可以使基片所在区域的工艺气体流速更均匀，提高基片整体的膜厚均匀性。

Description

反应腔室
技术领域
本发明涉及半导体加工技术领域，具体涉及一种反应腔室。
背景技术
钨塞(W-plug)是在半导体行业中广泛应用的一道工艺，它将金属钨填充于孔洞(Via)或沟槽(Trench)中，利用金属钨的良好导电性和抗电迁移特性，实现前道器件与后道器件之间电导通的工艺需求。
当前行业中采用气相沉积法(Chemical Vapor Deposition，CVD) 法进行钨的沉积，目前，为避免工艺过程中钨在基片边缘沉积，需要在基片边缘留有去边(Edgeexclusion)区域，故需要在基片边缘增加边缘吹扫(Edge purge)气流。图1为现有技术中的气相沉积工艺中基片边缘的吹扫气流的示意图，如图1所示，在进行工艺时，在基座1边缘设置有上挡环6和下挡环7，上挡环6的内缘部分对基片2 的边缘有一定的遮挡，且在垂直方向上与基片2之间留有空隙。于是在上挡环6、下挡环7、基座1和基片2之间形成了吹扫气道，当边缘吹扫气流从该气道吹出时(沿图1中虚线箭头所指)，分布在基片 2表面被上挡环6遮挡的区域的反应物被吹走，因此该区域不会沉积薄膜，由此则可以在基片2表面形成所需要的去边区域。而反应后的残余气体经过上挡环6的上表面与反应腔室顶部之间的排气流道进入排气口，排出反应腔室。
然而，为使上挡环6可以位于基片2表面上方以进行遮挡，下挡环7的上表面通常高于基片2的上表面，导致上挡环6的上表面与反应腔室的腔室上盖51之间的排气流道较窄，流经此处的工艺气体流速较快，在基片2边缘停留时间短，进而导致基片2边缘上成膜的厚度较薄，基片2上整体的膜厚均匀性较差。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种反应腔室，包括：腔体和设置在所述腔体内的基座，所述基座包括用于承载基片的承载部和环绕所述承载部的边缘部，所述承载部的上表面的高度大于所述边缘部的上表面的高度，所述反应腔室还包括：
第一挡环，所述第一挡环设置在所述边缘部的上表面且环绕所述承载部设置，且所述承载部的上表面高于所述第一挡环的上表面；
第二挡环，所述第二挡环设置在所述第一挡环背离所述边缘部的一侧，且包括：本体部和设置在所述本体部远离所述第一挡环一侧的遮挡部，所述遮挡部突出于所述第二挡环靠近所述承载部的表面，所述遮挡部用于遮挡所述基片的边缘。
可选地，所述遮挡部的下表面与所述承载部的上表面之间具有第一预设竖直间距。
可选地，所述本体部的上表面与所述承载部的上表面之间具有第二预设竖直间距，且所述第二预设间距小于或等于所述第一预设竖直间距。
可选地，所述遮挡部包括沿靠近所述承载部的方向依次设置的：内环部、平坦部和外环部；
沿靠近所述承载部的方向，所述内环部的厚度逐渐减小，所述外环部的厚度逐渐增大。
可选地，所述遮挡部平行于所述第二挡环径向的纵截面为梯形。
可选地，所述内环部、所述外环部和所述平坦部沿所述第二挡环的径向尺寸相同。
可选地，所述第一挡环和所述第二挡环同轴设置。
可选地，所述第二挡环的本体部的厚度在2mm至8mm之间，所述遮挡部的厚度在0.7mm至2.7mm之间。
可选地，所述第二挡环的本体部和所述遮挡部形成为一体结构。
可选地，所述反应腔室为化学气相沉积腔室，且所述腔体的顶壁上设置有进气通道，所述腔体的侧壁上设置有排气通道。
本发明具有以下有益效果：
采用本发明实施例提供的承载装置，由于承载部的上表面高于第一挡环的上表面，因此，第二挡环的下表面也低于承载部的上表面，相较于现有技术而言，本发明实施例降低了第二挡环的高度，增加了第二挡环与反应腔室顶部之间的排气流道的尺寸，从而可以降低流经基片边缘的工艺气体流速，使基片表面上方的工艺气体流速一致，进而提高基片整体的膜厚均匀性。
附图说明
附图是用来提供对本发明的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明，但并不构成对本发明的限制。在附图中：
图1为现有技术中的气相沉积工艺中基片边缘的吹扫气流的示意图；
图2为现有技术中基片上的薄膜厚度曲线；
图3为本发明实施例提供的反应腔室的示意图；
图4为本发明实施例提供的第二档环的俯视图；
图5为图4沿剖线AA’的剖视图；
图6为本发明实施例提供的挡环结构与现有技术中的挡环结构的对比图。
具体实施方式
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。
当前行业中主流的是采用气相沉积法(Chemical Vapor Deposition，CVD)法进行金属钨的沉积，气相沉积法基本能够很好的实现微结构(Via and Trench)的金属填充。早期的半导体工艺的关键尺寸(Critical Dimension，CD)较大，孔洞或沟槽的深宽比也较小，对于CVD工艺来说填充这样的结构并不是十分严峻的挑战。随着半导体技术的进步，半导体器件的关键尺寸趋于小型化，对于钨塞工艺来说，开口小、深宽比大的微结构渐渐成为了工艺中的难点。产品中要求微结构填充的金属钨尽可能不留孔隙或空洞，并且杂质尽量少，电阻率较低。
如图1所示，在CVD工艺中，基片2与反应腔室的腔室上盖51 之间距离通常设置在数毫米至数十毫米之间，而上挡环6的厚度通常设置在数毫米至十毫米之间，因此，上挡环6与反应腔室的腔室上盖 51之间的距离较基片2与反应腔室的腔室上盖51之间的距离变窄了 10％至50％，变窄的气体流道导致工艺气体在交界处的流速变快，工艺气体在该处停留时间短，进而导致基片2边缘上成膜的厚度较薄。图2为现有技术中基片上的薄膜厚度曲线，其中虚线表示设置上挡环 6时的薄膜厚度，实线表示未设置上挡环6的薄膜厚度。从图2中可以看出，未设置上挡环6时，薄膜厚度曲线较为平坦，即基片2整个表面上薄膜的厚度较为均匀；而设置有上挡环6时，在半径大于 135mm的区域，薄膜厚度呈现急剧下降的趋势，即基片2整个表面上薄膜的厚度均匀性较差。
基于此，本发明提供一种反应腔室，图3为本发明实施例提供的反应腔室的示意图，图4为本发明实施例提供的第二档环的俯视图。结合图3和图4所示，反应腔室包括：腔体5和设置在腔体5 内的基座1，基座1包括用于承载基片2的承载部11和环绕承载部 11的边缘部12，承载部11的上表面的高度大于边缘部12的上表面的高度。其中，反应腔室还包括：第一挡环3和第二挡环4，第一挡环3设置在边缘部12的上表面且环绕承载部11设置，且承载部11 的上表面高于第一挡环3的上表面。第二挡环4设置在第一挡环3 背离边缘部12的一侧，且包括：本体部41和设置在本体部41远离第一挡环3一侧的遮挡部42，遮挡部42突出于第二挡环4靠近承载部11的表面，遮挡部42用于遮挡基片2的边缘。
具体地，第一挡环3和第二挡环4的横截面可以为连续的多边形或者圆形等形状，第一挡环3和第二挡环4与承载部11之间具有间隔，可以供吹扫气体通过。遮挡部42可以设置在本体部41上靠近承载部11的一侧，且使遮挡部42的厚度尽量小，从而可以最大程度的减小第二挡环4的整体厚度。如图3所示，第一挡环3、第二挡环 4的本体部41、边缘部12、承载部11、遮挡部42以及基片2之间可以形成吹扫气道，吹扫气体经过该吹扫气道后可以输出至基片2的上表面的边缘，将该边缘的工艺气体吹走，防止工艺气体在该边缘沉积，从而使基片2的边缘可以形成去边区域。
在本发明实施例中，由于承载部11的上表面高于第一挡环3的上表面，因此，第二挡环4的下表面低于承载部11的上表面，相较于图1中上挡环6整个下表面均高于承载部11的上表面的方案而言，本发明实施例降低了第二挡环4的高度，增加了第二挡环4与反应腔室的腔室上盖51之间的排气流道的尺寸，从而可以降低流经基片2 边缘的工艺气体的流速，使基片2表面上方的工艺气体流速一致，进而提高基片2整体的膜厚均匀性。
在一些具体实施例中，基座1可以连接驱动机构，驱动机构用于驱动基座升降和/或旋转。第二挡环4可以固定在反应腔室中的预定位置，当基座1下降时，第一挡环和第二挡环分离，第一挡环3 可以随基座1移动，第二挡环4可以保持在原始位置，从而有利于将基片2设置在基座1的上表面上。当基座1上升至工艺位时，第一挡环3和第二挡环4接触，以使第二挡环4的遮挡部42可以遮挡基片 2的边缘，从而可以进行沉积工艺。
在一些具体实施例中，遮挡部42的下表面与承载部11的上表面之间具有第一预设竖直间距。其中，遮挡部42的下表面为遮挡部 42朝向本体部41的表面，承载部11的上表面为用于承载基片2的承载面。第一预设竖直间距可以大于待承载的基片2的厚度，从而使基座1处于工艺位、第二挡环4与第一挡环3接触时，遮挡部42与基片2的上表面之间留有间隙，以利于吹扫气体从吹扫气道中吹出。
在一些具体实施例中，本体部41的上表面与承载部11的上表面之间具有第二预设竖直间距，且第二预设竖直间距小于或等于第一预设竖直间距。其中，本体部41的上表面为远离第一挡环3的表面，第二预设竖直间距小于或等于第一预设竖直间距，从而在基座1处于工艺位时，本体部41的上表面不高于遮挡部42的下表面，从而更有利于吹扫气体从吹扫气道中吹出。
在一些具体实施例中，第二挡环4的本体部41和遮挡部42可以形成为一体结构。图5为图4沿剖线AA’的剖视图，结合图3至图5所示，遮挡部42包括沿靠近承载部11的方向依次设置的：内环部421、平坦部422和外环部423。沿靠近承载部11的方向，内环部 421的厚度逐渐减小，外环部423的厚度逐渐增大。平坦部422的上表面大致平坦。通过使遮挡部42的内环部421和外环部423的厚度逐渐变化，可以减小工艺气体在经过遮挡部42上方流动时，遮挡部 42对工艺气体的阻力。
在一些具体实施例中，遮挡部42平行于第二挡环4径向的纵截面为梯形。进一步地，如图5所示，内环部421、外环部423和平坦部422沿第二挡环4的径向尺寸相同，从而可以使整个遮挡部42的纵截面形成正梯形。
具体地，图6为本发明实施例提供的挡环结构与现有技术中的挡环结构的对比图，图6中的左图示出了现有技术中的上挡环6和下挡环7，图6中的右图示出了本发明实施例的第一挡环3和第二挡环 4，结合图1、和图6中左图所示，现有技术中的上挡环6的包括设置在外侧的第一部分61和设置在内侧的第二部分62，第一部分61 的表面平坦，沿靠近承载部11的方向，第二部分62的厚度逐渐减小。第二部分62的倾斜面与下表面之间的夹角为α，上档环6的下表面到边缘部12的上表面之间的距离为m，上挡环6的第一部分43的厚度为b，下挡环7的宽度为h，第二部分62的宽度为k。综上，上挡环6的上表面到边缘部12的上表面的距离为b+m。
结合图3和图6中右图所示，本发明实施例中的遮挡部42的纵截面为梯形，梯形的两个底角均为α，遮挡部42的下表面到边缘部 12的上表面之间的距离为m，第一挡环3的厚度为a，本体部41的厚度为b，其中，m-a＝b。遮挡部42的厚度为c，其中，b-c＝d。第二挡环4的宽度为h，遮挡部42的宽度为k，其中，内环部421的宽度e、平坦部422的宽度f以及外环部423的宽度g均相同，均等于1/3k，综上，本发明实施例中的第二挡环4的上表面到边缘部12的上表面的距离为a+b+c＝m+c。
由于现有技术中，上挡环6的上表面到边缘部12的上表面的距离为x＝b+m，而在本发明实施例中，第二挡环4的上表面到边缘部 12的上表面的距离为y＝m+c，x-y＝b-c＝d，可见，本发明实施例中的第二挡环4的最高点到边缘部12的上表面的距离小于现有技术中的上挡环6的最高点到边缘部12的上表面的距离，且二者之间的距离之差为d。
在本发明实施例中，内环部421的宽度e、平坦部422的宽度f 以及外环部423的宽度g可以设置在1mm至3mm之间，第二挡环4 的本体部41的厚度可以设置在2mm至8mm之间，优选地，可以设置在3mm至4mm之间，遮挡部42的厚度可以设置在0.7mm至2.7mm 之间，遮挡部42的上表面距离基片2的上表面的距离可以设置为小于2mm，优选地，可以设置为小于1mm。通过调整d的大小(如使 d＝1/3b)，可以使第二挡环4与反应腔室顶部之间的排气流道的尺寸增加10％～50％，从而使第二挡环4和反应腔室顶部之间的距离与基片2和反应腔室的顶部之间的距离相近，改善基片2边缘的工艺气体的流速较快的问题。
在一些具体实施例中，第一挡环3和第二挡环4同轴设置。具体地，可以通过在第一挡环3和第二挡环4之间设置定位机构，使第一挡环3和第二挡环4在安装时始终保持圆心的位置一致。在一些具体实施例中，反应腔室还包括：加热件，加热件用于加热基座。通过加热件将基座加热，可以使基座上的基片2达到反应温度，从而使基片2与工艺气体发生反应，完成所需的工艺。其中，加热件可以包括位于基座内的加热丝。
在一些具体实施例中，反应腔室可以为化学气相沉积腔室，如图3所示，腔体5的顶壁上设置有进气通道，腔体5的侧壁上设置有排气通道。
具体地，腔体5可以包括侧壁52和设置在侧壁52顶部的腔室上盖51，腔体5的顶壁即腔室上盖51，进气通道可以是设置在腔室上盖51上的通孔，进气通道可以设置在基片2的上方，以使工艺气体经过进气通道后可以被输送至基片2的上表面。排气通道可以是设置在侧壁52上的通孔，排气通道的高度可以低于第二挡环4的高度。
下面以在基片2上沉积金属钨的过程为例对本发明实施例的反应腔室的工作过程进行解释说明：
工艺气体和载气通过腔室上盖51的进气通道输送至基片2的表面，工艺气体在基片2的表面发生反应，从而在基片2的表面沉积金属钨，吹扫气体经过第一挡环3、第二挡环4、边缘部12、承载部11 和基片2之间形成的吹扫气道输出至基片2的边缘，并将位于基片2边缘的工艺气体吹走，因此，基片2的边缘上不会沉积金属钨，从而在基片2的边缘形成一圈去边区域。载气、残余的工艺气体以及反应生成的副产物气体等均经由第二挡环4与腔室上盖51之间的排气流道向外流动，最后经由侧壁52上的排气通道排出反应腔室。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (10)

1.一种反应腔室，包括：腔体和设置在所述腔体内的基座，所述基座包括用于承载基片的承载部和环绕所述承载部的边缘部，所述承载部的上表面的高度大于所述边缘部的上表面的高度，其特征在于，所述反应腔室还包括：
第一挡环，所述第一挡环设置在所述边缘部的上表面且环绕所述承载部设置，且所述承载部的上表面高于所述第一挡环的上表面；
第二挡环，所述第二挡环设置在所述第一挡环背离所述边缘部的一侧，且包括：本体部和设置在所述本体部远离所述第一挡环一侧的遮挡部，所述遮挡部突出于所述第二挡环靠近所述承载部的表面，所述遮挡部用于遮挡所述基片的边缘。
2.根据权利要求1所述的反应腔室，其特征在于，所述遮挡部的下表面与所述承载部的上表面之间具有第一预设竖直间距。
3.根据权利要求2所述的反应腔室，其特征在于，所述本体部的上表面与所述承载部的上表面之间具有第二预设竖直间距，且所述第二预设间距小于或等于所述第一预设竖直间距。
4.根据权利要求1所述的反应腔室，其特征在于，所述遮挡部包括沿靠近所述承载部的方向依次设置的：内环部、平坦部和外环部；
沿靠近所述承载部的方向，所述内环部的厚度逐渐减小，所述外环部的厚度逐渐增大。
5.根据权利要求4所述的反应腔室，其特征在于，所述遮挡部平行于所述第二挡环径向的纵截面为梯形。
6.根据权利要求4所述的反应腔室，其特征在于，所述内环部、所述外环部和所述平坦部沿所述第二挡环的径向尺寸相同。
7.根据权利要求1至6中任意一项所述的反应腔室，其特征在于，所述第一挡环和所述第二挡环同轴设置。
8.根据权利要求1至6中任意一项所述的反应腔室，其特征在于，所述第二挡环的本体部的厚度在2mm至8mm之间，所述遮挡部的厚度在0.7mm至2.7mm之间。
9.根据权利要求1至6中任意一项所述的反应腔室，其特征在于，所述第二挡环的本体部和所述遮挡部形成为一体结构。
10.根据权利要求1至6中任意一项所述的反应腔室，其特征在于，所述反应腔室为化学气相沉积腔室，且所述腔体的顶壁上设置有进气通道，所述腔体的侧壁上设置有排气通道。
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CN208923044U (zh) * 2018-11-08 2019-05-31 北京北方华创微电子装备有限公司 对位部件及反应腔室

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WO2021179886A1 (zh) * 2020-03-10 2021-09-16 北京北方华创微电子装备有限公司 反应腔室
CN112853314A (zh) * 2020-12-23 2021-05-28 北京北方华创微电子装备有限公司 挡环组件、半导体腔室及其清理方法
CN113241312A (zh) * 2021-04-30 2021-08-10 北京北方华创微电子装备有限公司 半导体工艺设备的工艺腔室及半导体工艺设备
TWI818507B (zh) * 2022-01-12 2023-10-11 大陸商北京北方華創微電子裝備有限公司 半導體製程設備及其承載裝置

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