201112326 六、發明說明： 【發明所屬之技術領域】 本發明涉及等離顿處理裝置領域，尤其涉及—種 少基片背面聚合物並且保證對基片處理的均-性的結構/ 【先前技術】 在基片的轉子魏_財，如圖1所示，在等離子 體飯刻室内設置有基座1，，位於該基座丨，表面上的支榜件 • 3，該支撐件通常為靜電卡盤3’（ESC)，以及埋設在該靜 電卡盤3’巾的直流電極4，。在該靜電卡盤3，上安裝待银 刻的基片2。該等離子體室内還包含圍繞設置在基座γ的 外^則的絕緣環Η，，該絕緣環11，可由石英製成；位於絕 緣％ 11之上、且靠近並圍繞基片2，設置的聚焦環12，， 該聚焦環12, _設置在基片2，的背面周緣部分之下，即 该聚焦環12’社表面絲片2，的背面之間設有間隙丨以 及圍繞聚純12’設置賴蓋環14，，其駐在所述的 _ 絕緣環11’之上。 進行蝕刻時，在等離子體處理室内對蝕刻反應氣體（由 種或多種氣體組成）施加能量以將氣體激勵形成等離子 體，並且在該等離子體處理室中存在可用於產生和維持中等 密度或高密度的等離子體的射頻（RF)能量、微波能量和/或 磁場；由於等離子體的加熱使基片邊緣的聚焦環12，具有很 鬲的溫度，而且該溫度高於可使該聚焦環12，上的碳氟化合 物或碳氫化合物熱裂解的溫度，由於基片2，是由溫控裝置 (如靜電夾盤與基片間流動的氦氣）控溫的，從而它具有比 201112326 聚焦環12’低的溫度’所以熱解後的碳氟化合物或碳氫化合 物會在相對低溫的基片2’的背部邊緣2〇，沉積並重新形成 基片聚合物（而這也是導致基片背面形成聚合物的主要原 因）’導致後續工藝步驟中需對這些堆積的聚合物進行進一步 處理。這會大大地降低生產效率。 【發明内容】201112326 VI. Description of the Invention: [Technical Field] The present invention relates to the field of plasma treatment devices, and more particularly to a structure having a small amount of backside polymer and ensuring uniformity to substrate processing/previous art In the rotor of the substrate, as shown in FIG. 1, a susceptor 1 is disposed in the plasma rice engraving chamber, and the support member is located on the surface of the pedestal •, and the support member is usually an electrostatic card. A disk 3' (ESC), and a DC electrode 4 embedded in the electrostatic chuck 3'. A substrate 2 to be silvered is mounted on the electrostatic chuck 3. The plasma chamber further includes an insulating ring disposed around the outer surface of the susceptor γ, the insulating ring 11 being made of quartz; being disposed above the insulating layer 11 and adjacent to and surrounding the substrate 2, the focus is set The ring 12, the focus ring 12, is disposed under the peripheral portion of the back surface of the substrate 2, that is, the focus ring 12' is provided with a gap between the back surface of the wire 2 and a 12' surrounding The cover ring 14, which resides above the _ insulating ring 11'. When etching is performed, energy is applied to the etching reaction gas (composed of one or more gases) in the plasma processing chamber to energize the gas to form a plasma, and there is a medium density or high density that can be used to generate and maintain in the plasma processing chamber. Radio frequency (RF) energy, microwave energy and/or magnetic field of the plasma; due to the heating of the plasma, the focus ring 12 at the edge of the substrate has a very high temperature, and the temperature is higher than that of the focus ring 12, The temperature at which the fluorocarbon or hydrocarbon is thermally cracked, because the substrate 2 is temperature-controlled by a temperature control device (such as helium flowing between the electrostatic chuck and the substrate), so that it has a 12' focus ring than the 201112326 Low temperature' so the pyrolyzed fluorocarbon or hydrocarbon will 〇 2 at the back edge of the relatively low temperature substrate 2', depositing and reforming the substrate polymer (which also results in the formation of a polymer on the back side of the substrate The main reason) is that further processing of these accumulated polymers is required in subsequent process steps. This will greatly reduce production efficiency. [Summary of the Invention]
本發明的目的是提供一種可減少基片背面聚合物沉積的 結構，同時’該結構可增強對基片餘刻的均一性。 為了達到上述目的，本發明提供一種可減少基片背面聚 合物沉積的結構，其圍繞設置於一等離子體處理室中的基片 基座的外周侧，所述基片的邊緣突出於所述的基座的上表面 的邊緣；所述的減少基片背面聚合物沉積的結構包含：一聚 焦環，其隱設置於所述基座的外周側；騎焦環具有一延 伸。卩其至少部分地延伸至基片背面的邊緣之下；以及一導 體環，其設置於基片的背面之下，並且介於所述基座的外周 側及所述聚焦環的延伸部之間。 、其中’所述_體環可由硬、碳化枚者石墨等材料製 坐道所述的聚焦環（包括第一聚焦環以及第二聚焦環）可由 •山體或導體材料製成，包括石夕（例如單晶石夕或多晶石夕） =匕物（例如通過由化學氣相沉積得到的石夕碳化物）、銘氧化 子體氮Γ,者石英等。由於在基片的等離 _ “財’該祕會直縣露在等離子體 此’可優選高純度材料來製成該聚焦環，例㈣（例如單^ 201112326 石夕或多晶石夕）、或者石夕碳化物（例如通過由化學氣相沉積制 的矽碳化物）等。 本發明的另-種技術方針，所述的聚f、環可以沿其延 伸部的上表面分隔形成第—聚焦環和第二聚焦環；其中所 述的第-聚焦環圍繞設置於所述基座的外周側；所述的第二 聚焦環包含延伸部，其至少部分地延伸至基片f面的邊緣之 下。 本發明中’所述的導體環的上表面和所述聚焦環延伸部 的上表面是位於同一平面的。 本發明中，所述的等軒體處理室巾還包含有圍繞設置 於所述基座的外周_絕緣環；所述的聚焦環和導體環設置 於該絕緣環之上’且覆蓋整個絕緣環的頂部表面。 其中’所述的絕緣環可由喊材料（如⑨氧化物，也就 疋石央’或銘氧化物）’或者聚合物材料（如聚醯亞胺）等製 成。優選的，使用石英材料來製成該絕緣環。 • 進一步，本發明所述的可減少基片背面聚合物沉積的結 構’還包含-圍繞聚焦環的外周側設置的覆蓋環，其覆蓋在 所述的絕緣環❸卜贿上表面之上。或者，該覆蓋環可以是 在聚焦環上喊的徑向向外延伸的部分，即覆蓋環與聚焦環 是一體形成的。 進一步，本發明所述的可減少基片背面聚合物沉積的結 構’還包含若干貫穿設置在絕緣環中的冷卻通道，其傳遞冷 卻物體至聚焦環和/或導體環。 根據上述提供的可減少基片背面聚合物沉積的結構，本 201112326 發明還提供一種包含該結構的等離子體處理室，該等離子體 處理室具有：基片，用於放置該基片的基座，以及圍繞設置 於該基座的外周側的可減少基片背面聚合物沉積的結構；其 中， 所述的基片的邊緣突出於所述的基座的上表面的邊緣； 所述的減少基片背面聚合物沉積的結構包含：一聚焦 壤’其圍繞設置於所述基座的外周側；該糕環具有一延伸SUMMARY OF THE INVENTION It is an object of the present invention to provide a structure which reduces the deposition of polymer on the back side of a substrate while the structure enhances the uniformity of the substrate. In order to achieve the above object, the present invention provides a structure capable of reducing polymer deposition on a back surface of a substrate, which surrounds an outer peripheral side of a substrate base provided in a plasma processing chamber, the edge of the substrate protruding from the The edge of the upper surface of the pedestal; the structure for reducing polymer deposition on the back side of the substrate comprises: a focus ring disposed on the outer peripheral side of the susceptor; and the riding ring has an extension.至少 at least partially extending below the edge of the back side of the substrate; and a conductor ring disposed below the back side of the substrate and interposed between the outer peripheral side of the base and the extension of the focus ring . The focus ring (including the first focus ring and the second focus ring) in which the 'body ring can be made of hard, carbonized graphite or the like can be made of mountain or conductor material, including Shi Xi ( For example, single crystal or polycrystalline stone = 匕 (for example, by Shihua carbide obtained by chemical vapor deposition), oxidized body nitrogen ruthenium, quartz, and the like. Due to the plasmon in the substrate _ "Cai", the secret will be exposed to the plasma, this can be preferably made of high-purity materials to make the focus ring, for example (4) (for example, single ^ 201112326 Shi Xi or polycrystalline eve), Or a stone alloy (for example, by a ruthenium carbide formed by chemical vapor deposition), etc. Another technical guideline of the present invention, the polyf, the ring may be separated along the upper surface of the extension portion to form a first focus a ring and a second focus ring; wherein the first focus ring is disposed on an outer peripheral side of the base; and the second focus ring includes an extension that extends at least partially to an edge of the surface of the substrate f In the present invention, the upper surface of the conductor ring and the upper surface of the extension of the focus ring are located on the same plane. In the present invention, the embossed processing towel further includes a surrounding a periphery of the pedestal_insulating ring; the focusing ring and the conductor ring are disposed above the insulating ring and covering the top surface of the entire insulating ring. Wherein the insulating ring can be made of a shim material (such as 9 oxide, Also 疋石央' or Ming oxide)' Or a polymer material (such as polyimide), etc. Preferably, the insulating material is made of a quartz material. Further, the structure of the present invention for reducing polymer deposition on the back side of the substrate 'includes - a cover ring disposed around the outer peripheral side of the focus ring overlying the upper surface of the insulating ring. Alternatively, the cover ring may be a radially outwardly extending portion of the focus ring, ie covering The ring and the focus ring are integrally formed. Further, the structure of the present invention for reducing polymer deposition on the back side of the substrate further includes a plurality of cooling passages disposed through the insulating ring, which transfer cooling objects to the focus ring and/or The present invention is further provided with a plasma processing chamber comprising the structure, the plasma processing chamber having a substrate for placing the substrate, according to the above-mentioned structure for reducing polymer deposition on the back side of the substrate. a susceptor, and a structure surrounding the outer peripheral side of the susceptor for reducing polymer deposition on the back side of the substrate; wherein the edge of the substrate protrudes from the An edge of the upper surface of the pedestal; the structure for reducing polymer deposition on the back side of the substrate comprises: a focusing soil disposed around an outer peripheral side of the susceptor; the cake ring having an extension
部’其至少部分地延伸至基>1背面的邊緣之下；以及-導體 壤’其設置於基片的背面之下’並骑於所述基座的外周侧 及所述聚焦環的延伸部之間。 所述的基座還包含—位於其上表面上的、用於安震基片 的基片支料，該W支撐件包含靜計齡埋 卡盤内的直流電極。 緣之 本發明的另一種技術方案中，所述的聚焦環可以沿盆延 伸部的上表面分隔形成第—聚焦環和第二聚焦環；其中，所 述的第-聚焦環圍繞設置於所述基座的外周侧；所述的第二 聚焦壤包含延伸部’其至少部分地延伸至基片背面的邊 =月中’所轉體環的上表面和 谁一牛士 焦痛上表面）是位於同—平面的。 少本發_述的轉子體處 基座的外周側的絕緣環;所述的 本=環之上，且覆蓋整個絕緣環的頂部表面〆 所述的可減少基片背面聚合物沉積的結構， 201112326 运包含-®繞聚焦環的外顯設㈣覆蓋環， 的絕緣環的外徑處上表面之上。或者，該覆蓋環可以 成的徑向向外延伸的部分’即覆蓋環與聚焦環是1 絕緣軒财理室+軌含轩貫穿設置在 ΐ導H _，雜__絲焦環和Portion 'at least partially extends below the edge of the back of the base>; and - the conductor is disposed 'below the back of the substrate' and rides on the outer peripheral side of the base and the extension of the focus ring Between the ministries. The susceptor further includes a substrate support for the anti-shock substrate on the upper surface thereof, the W support comprising a DC electrode in the static age buried chuck. In another aspect of the present invention, the focus ring may be separated along the upper surface of the basin extension to form a first focus ring and a second focus ring; wherein the first focus ring is disposed around the The outer peripheral side of the pedestal; the second focusing soil comprises an extension portion 'which at least partially extends to the side of the back side of the substrate = the middle surface of the body ring and the upper surface of the cow's pained face" Located in the same plane. The insulating ring on the outer peripheral side of the pedestal at the rotor body is less than the above-mentioned ring, and covers the entire surface of the insulating ring, which reduces the structure of polymer deposition on the back side of the substrate, 201112326 Included -® around the outer ring of the focus ring (four) cover ring, the outer diameter of the insulating ring above the upper surface. Alternatively, the cover ring may be formed as a radially outwardly extending portion ‘the cover ring and the focus ring are 1 insulated 轩 财 理 + + + + + + + 贯穿 贯穿 贯穿 贯穿 贯穿 贯穿 贯穿 贯穿 贯穿 贯穿 贯穿 贯穿 贯穿 贯穿 和 和 和 和 和
上述所提到的技術方針，由於插人設 片的等離子體_過程中’具有最小的曝露度，同時 ^部通道輸人的冷卻氣體的作用，故該導體環的溫度不合 達到使得聚焦環上的碳化物熱裂解的高度，所以可以限制^ ，焦環上的碳化物熱裂解而沉積在基片背面的聚合物的形 成’從而可大大減少形成在W背_聚合物。 又由於在-種可選擇到實施方式中，本發明進一步採用 了分隔的上、下兩段聚焦環的特殊結構，故上聚焦環（第— 聚焦環）可作為更靠近基片f面的τ聚焦環（第二聚焦環） 的熱屏障，g為在真空魏巾熱傳遞將變得較慢，又由於上、 下聚焦環之間所存在的間隙’將直接導致兩者間熱傳導中 辦’也就是說’基片在_過程中產生的熱量將在由上聚隹 %傳遞至T聚焦環時被_巾斷，_下雜環可保持在較 的皿度。由此’在對基片進行等離子侧過程中，下聚 了衣的，皿度不會達到使得其上碳化物熱裂解的高度，所以可 以限制S下聚焦環上的碳化物熱裂解而蒸發沉積在基片背面 的聚合物的形成。由於這個形成基片背面聚合物的主要原因 201112326 被限制，所以可大大減少形成在基Π面的聚合物。 最後，由於在本發明中導體環的設置可在最小化基片輪 廓傾斜的基礎上允許聚焦環和電極之間的RF#合，故不會^ 致钱刻過1中等離子财基#表面的密度分佈不均，從而 證了钱刻的均一性。 ,、According to the above-mentioned technical guideline, since the plasma of the inserted film has the smallest exposure degree and the cooling gas of the channel is input, the temperature of the conductor ring does not reach the focus ring. The height of the carbide thermal cracking can limit the formation of the polymer on the backside of the substrate by thermal cracking of the carbide on the char ring, which can greatly reduce the formation of the W-polymer. Further, since the present invention further adopts a special structure of the separated upper and lower two-stage focus ring, the upper focus ring (the first focus ring) can be used as the τ closer to the surface of the substrate f. The thermal barrier of the focus ring (second focus ring), g is the heat transfer in the vacuum wipes will become slower, and the gap between the upper and lower focus rings will directly lead to heat transfer between the two. That is to say, the heat generated by the substrate during the process will be blocked when it is transferred from the upper poly% to the T focus ring, and the lower heterocyclic ring can be kept at a relatively high degree. Thus, during the plasma side of the substrate, the coating is not gathered up to a height at which the carbides are thermally cracked, so that the thermal cracking of the carbide on the focus ring of S can be limited to evaporative deposition. The formation of a polymer on the back side of the substrate. Since this main cause of polymer formation on the back side of the substrate is limited to 201112326, the polymer formed on the base surface can be greatly reduced. Finally, since the arrangement of the conductor loop in the present invention allows the RF# between the focus ring and the electrode to be minimized on the basis of minimizing the inclination of the substrate profile, it does not cause the money to be engraved on the surface of the medium ion The density distribution is uneven, which proves the uniformity of money. , ,
本發明還提供另-種可減少基片背面聚合物沉積的結構 的技術方案’細繞設置於-等離子體處理室中的基片基座 的外周側，所述基⑽邊緣突出於所述的基座的上表面的邊 〜该可減少基片背面聚合物沉積的結構包含··—第一聚焦 壞’其圍繞設置於所述基座的外周側；以及二 其:_第-聚焦環的下方，該第二聚焦環的:個二 至基片f面的邊緣之下；所述的第二聚焦環由 材料S。’所述的第二粒環岭、碳切或者石墨等導體 所述的第-聚焦環可由半導體鱗體材料製成，包括石夕 早轉或多晶朴辦化物（例如通過由化學氣相沉 積仔到_碳錄）、純化物、域⑽、魏化物 由於在基片的等離子體韻刻過程中’該聚焦環將會 麵暴路铸離子财，因此，可魏高純度材料來製成該 '下聚焦環’例如梦（例如單祕或多晶朴或者石夕碳化 物（例如通過由化學氣相沉積得到的石夕碳化物）等。 本發明中，所述的等離子體處理室中還包含有圍繞設置 201112326 於所述基座的外周側的絕緣環；所述的第二聚焦環設置於該 絕緣環之上，且覆蓋整個絕緣環的頂部表面。 其中，所述的絕緣環可由陶瓷材料（如矽氧化物，也就 是石英，或鋁氧化物），或者聚合物材料（如聚醯亞胺）等製 成；優選的，使用石英材料來製成該絕緣環。 進-步，本剌所$的可減少基片冑面聚合物沉積的結 構’還包含*~圍繞第-聚焦環和第二聚焦環的外周側設置的 覆蓋環，其覆蓋在所述的絕緣環的外徑處上表面之上。 更進-步’本發明所述的可減少基片背面聚合物沉積的 結構’還包含若干貫穿設置在絕緣環巾的冷卻通道，其傳遞 冷卻物體至第二聚焦環。 根據上述的另-種可減少基片#面聚合物^^積的結構， 本發明還提供-種包含該結制等料體處理室，該等離子 體處理室具有：基片’驗放置該基片的基座，以及圍繞設 置於該基座的外周_可減少基片f面聚合物沉積的結構； 其中， 所述的基片的邊緣突出於所述的基座的上表面的邊緣； 所述的減少基片背面聚合物的結構包含一第一聚焦環， 其圍繞設置於所述基座的外關；以及—m環，其位 於所述第-聚焦環的下方’該第二聚焦環的—個端部至^部 分地延伸至基片背面的邊緣之下；該第二聚焦環由導體材料 製成。 本發明中’所述的基座還包含—位於其上表面上的、用 於安裝基μ基片支撐件’縣片支撐件包含靜電卡盤和埋 201112326 設在該靜電卡盤内的直流電極。 進一步’本發明所述的等離子體處理室中還包含有圍繞 设置於所述基座的外周侧的絕緣環；所述的第二聚焦環設置 於5亥絕緣環之上，且覆蓋整個絕緣環的頂部表面。 本發明中’所述的可減少基片背面聚合物沉積的結構還 包含一圍繞第一聚焦環和第二聚焦環的外周側設置的覆蓋 %，其覆蓋在所述的絕緣環的外徑處上表面之上。 • 本發明所述的等離子體處理室中還包含若干貫穿設置在 絕緣環和/或基座中的冷卻通道，其傳遞冷卻物體至第二聚焦 環。 在上述提到的第二種技術方案中，相當於將之前第一種技 術方案中的V體環和第二聚焦環形成_體，成為圍繞設置在 基片月面的個導體聚焦環，其結合了上述的插入導體環和 分段聚焦環的結構魏’從而在簡化了整舰構組成的基礎 上達到了上述較為複雜的第一種技術方案所能達到的相同 • 技術效果。即限制因碳化物熱裂解而沉積在基片背面的聚合 物的形成，有效減少形成在基片背面的聚合物。並且，該導 電聚焦㈣⑦置使得其在最小化基片輪廓傾斜的基礎上允許 聚焦環和電極之間的RF搞合，故不會導致钱刻過程中等離^ 體在基片表面的密度分佈不均，從而保證了兹刻的均 【實施方式】 以下結合圖2〜圖7，通過優選的具體實施例，詳細說明 本發明。 ° 本發明適用於多種轉子航理裝置，如：等離子體姓 201112326 刻或等離子體輔助化學氣相沉積等。下面以等離子體減的 應用為例來說明本發明結構。如圖2所示，為本發明中通過 插入導體環13來減少基片背面聚合物的-種實施例。該實施 例中’用於對基片進行等離子體_的等離子體侧室内設 置有基片2和基座丨’在該基座丨的上表㈣2上還設有用於 安裝基片2的基片支撐件3;該基片域件3包含通常是由陶 瓷材料製成的靜電卡盤3和埋設在該靜電卡盤3内的直流電 極4 ;所_基片2安裝在該基片支#件3上之後，盆邊緣突 出於基座1的上表面102的邊緣或者突出於所述基片支撑件3 的邊緣）。料離子體_室_包含設置於該基座1的外周 侧並且圍繞基座1的絕魏U，其可_級料（如魏化 t叙石或銘氧化物）’或者聚合物材料（如聚醯亞 等製成；優選的’使用石英材料來製成該絕緣環；該絕 緣％ 11可以是直接掷置在基座1上部周緣表面1〇1之上，也 2過其他連接方式（如：轩螺釘）固定在赫1 • 緣表面101之上。 在本實施例的等離子龜刻室内，還具有—本發明所述 t置在所述絕緣環11之上、且設置於基座i的外周側103 導:::基Γΐ面聚合物的結構;該結構包含:聚焦環12和 103 所述的聚焦環12圍繞所述基座1的外周側 . <下ΐΪΠ123,其延伸至基片2的背面邊緣卻 單晶^、Γ 導體或導體材料製成，包括石夕（例如 的石夕碳化物）、紹氧化物、峨化物、石夕氮化物、或者石英; 201112326 $於在基>1的等離子體蝕刻過程中，該聚焦環12將會直接暴 路在等離子體中，因此，可優選高純度材料來製成該聚焦環， 例如石夕（例如單晶石夕或多晶石夕）、或者石夕破化物（例如通過由 化學氣相沉積得到的矽碳化物）等。 所述的導體環13插入設置在基片2的背面之下、聚焦環 U和基座1之間，並且該導體環13的上表面和所述的聚 延伸部123的上表面是基本位於同一平面的，該導體環13還 =別與聚鱗延伸部123以及基座丨的外觸之間留有一適 當的徑向間隙，用於彌補公差和熱脹冷縮的變化。該導體環 13可由矽、碳化矽或者石墨等材料製成。 人本發明通過設置導體環13,可以-方面減少基片背面聚 合物，另-方面也增強對基片處_均—性。—方面，如圖2 所示，為了減少在基片2背面所產生的聚合物，在基片2背 面之下的聚焦環12和基座丨（包括靜電卡盤3)之間插入一 導電％ 13，使聚焦環12和基座1相互隔離開；該導電環13 分=與聚焦環12、基座1之間以及與基片2的背面之間存在 ^田間隙。在真空處理室的低氣壓環境中，這種間隙之間無 =氣，在’因而會隔斷相鄰元件之間的熱傳導，使非常熱的 聚焦環12的熱量不會很容易地傳遞至導電環13和基座丨，從 而大大降低了基片2的背©溫度’並jl由於該導電環η對等 離子體具有最小_露度，故其在侧過程巾的溫度比達到 熱裂解的溫度低，能有效的防止到達基片邊緣下方的碳化物 熱裂解’最終達職少熱藤後齡子從新在抑2背面沉 積並形成聚合物的目的該導電環13位於絕緣環^之上， 12 201112326 其也可和所述的絕緣環n的上表面結合形成—體；該導電環 13可由導體材料或半導體材料製成。 另一方面，導體環13也能夠增強對基片處理的均一性。 如圖6所7F，其為本發供的可減少基#背面聚合物的結 構增強對基片處理的均—性的示意圖。導體環13與靜電炎盤The present invention also provides a further technical solution for reducing the structure of polymer deposition on the back side of the substrate, which is finely disposed on the outer peripheral side of the substrate base in the plasma processing chamber, and the edge of the base (10) protrudes from the The side of the upper surface of the susceptor - the structure which reduces the deposition of the polymer on the back side of the substrate comprises: - the first focus is broken - it is disposed on the outer peripheral side of the susceptor; and the other is: - the first - focus ring Below, the second focus ring is below the edge of the f-plane of the substrate; the second focus ring is made of material S. The first focus ring described by the conductor of the second ring, carbon cut or graphite may be made of a semiconductor scale material, including a stone early turn or a polycrystalline plant (for example by chemical vapor deposition) From the _ carbon record), the purified material, the domain (10), and the Wei compound, due to the plasma engraving process in the substrate, the focus ring will be blasted into the ion, so the high purity material can be used to make the 'Lower focus ring' such as a dream (for example, mono- or polycrystalline or Shixia carbide (for example, by Shihua carbide obtained by chemical vapor deposition), etc. In the present invention, the plasma processing chamber is also An insulating ring is disposed on the outer peripheral side of the base around the setting 201112326; the second focus ring is disposed on the insulating ring and covers the top surface of the entire insulating ring. The insulating ring may be ceramic A material (such as cerium oxide, that is, quartz, or aluminum oxide), or a polymer material (such as polyimide); preferably, a quartz material is used to make the insulating ring. Reduce the amount of substrate The surface polymer deposited structure 'also includes a cover ring disposed around the outer circumference side of the first focus ring and the second focus ring, covering the upper surface of the outer diameter of the insulating ring. The structure of the present invention for reducing polymer deposition on the back side of the substrate further includes a plurality of cooling passages disposed through the insulating ring, which transfer the cooled object to the second focus ring. The substrate can be reduced according to the above-mentioned other species. The structure of the surface polymer, the present invention further provides a processing chamber including the material such as the junction, the plasma processing chamber has a substrate: a substrate for placing the substrate, and a surrounding The periphery of the pedestal _ the structure for reducing the deposition of the polymer of the substrate f; wherein the edge of the substrate protrudes from the edge of the upper surface of the susceptor; a first focus ring is disposed around the outer cover disposed on the base; and a -m ring is located below the first focus ring. The end of the second focus ring extends to the end To the edge of the back of the substrate; the second The ring is made of a conductor material. The base described in the present invention further includes a mounting substrate for mounting the base substrate support member on the upper surface thereof. The county sheet support member includes an electrostatic chuck and is buried in the 201112326. a DC electrode in the electrostatic chuck. Further, the plasma processing chamber of the present invention further includes an insulating ring disposed around an outer peripheral side of the susceptor; the second focus ring is disposed at an insulating ring of 5 kel Above and covering the top surface of the entire insulating ring. The structure of the present invention which reduces the deposition of the polymer on the back side of the substrate further comprises a cover % disposed around the outer peripheral side of the first focus ring and the second focus ring, Covering the upper surface of the outer diameter of the insulating ring. The plasma processing chamber of the present invention further includes a plurality of cooling passages disposed in the insulating ring and/or the base for transmitting the cooling object. In the second technical solution mentioned above, the V body ring and the second focus ring in the first technical solution are formed into a body, which is formed around the moon surface of the substrate. Guide Focus ring, which combines the aforementioned insertion loop conductor segment and the focus ring structure Wei 'thereby simplifying the entire ship structure based on the composition of more complex to achieve the above first aspect can achieve the same technical effect •. That is, the formation of a polymer deposited on the back surface of the substrate by thermal cracking of the carbide is restricted, and the polymer formed on the back surface of the substrate is effectively reduced. Moreover, the conductive focusing (four) 7 is such that it allows the RF between the focusing ring and the electrode to be engaged on the basis of minimizing the inclination of the substrate profile, so that the density distribution of the substrate on the surface of the substrate is not caused by the process of the etching process. The present invention will be described in detail by way of preferred embodiments with reference to FIGS. 2 to 7. ° The invention is applicable to a variety of rotor aeronautical devices, such as plasma surname 201112326 or plasma-assisted chemical vapor deposition. The structure of the present invention will be described below by taking the application of plasma reduction as an example. As shown in Fig. 2, an embodiment in which the polymer of the back surface of the substrate is reduced by inserting the conductor ring 13 in the present invention is shown. In the embodiment, the plasma side chamber for performing plasma on the substrate is provided with a substrate 2 and a substrate 丨'. On the upper surface (4) 2 of the susceptor, a substrate for mounting the substrate 2 is further provided. a support member 3; the substrate field member 3 comprises an electrostatic chuck 3, usually made of a ceramic material, and a DC electrode 4 embedded in the electrostatic chuck 3; the substrate 2 is mounted on the substrate After the upper portion 3, the edge of the basin protrudes from the edge of the upper surface 102 of the base 1 or protrudes from the edge of the substrate support 3. The ionomer_chamber_contains a peripheral material disposed on the outer peripheral side of the susceptor 1 and surrounding the susceptor 1, which can be a grade material (such as Weihua txu or Ming oxide) or a polymer material (such as Made of polythene or the like; preferably 'made of quartz material to make the insulating ring; the insulating % 11 may be directly thrown on the upper peripheral surface 1〇1 of the base 1, and also 2 other connection means (such as The yaw screw is fixed on the rim surface 101. In the plasma blasting chamber of the embodiment, there is further provided that the t of the present invention is placed on the insulating ring 11 and is disposed on the pedestal i. The outer peripheral side 103 is a structure of::: a base-faced polymer; the structure comprises: focus rings 12 and 103. The focus ring 12 surrounds the outer peripheral side of the susceptor 1. < squat 123, which extends to the substrate The back edge of 2 is made of single crystal, Γ conductor or conductor material, including Shi Xi (for example, Shi Xi carbide), Shao Oxide, Telluride, Shi Ni nitride, or quartz; 201112326 $于在基> During the plasma etching process, the focus ring 12 will directly rush into the plasma, so The high-purity material is selected to form the focus ring, such as Shi Xi (for example, single crystal or polycrystalline stone), or stone broke (for example, tantalum carbide obtained by chemical vapor deposition). The conductor ring 13 is inserted under the back surface of the substrate 2, between the focus ring U and the susceptor 1, and the upper surface of the conductor ring 13 and the upper surface of the poly-extension portion 123 are substantially in the same plane. The conductor ring 13 also has a suitable radial gap between the scale extension 123 and the external contact of the base raft for compensating for tolerances and changes in thermal expansion and contraction. It is made of a material such as tantalum carbide or graphite. The present invention can reduce the polymer on the back side of the substrate by providing the conductor ring 13, and further enhances the uniformity of the substrate. In order to reduce the polymer generated on the back side of the substrate 2, a conductive %13 is inserted between the focus ring 12 and the susceptor 丨 (including the electrostatic chuck 3) under the back surface of the substrate 2, so that the focus ring 12 and the base The seats 1 are isolated from each other; the conductive ring 13 points = with the focus ring 12, the base 1 And there is a gap between the back surface of the substrate 2. In the low pressure environment of the vacuum processing chamber, there is no gas between the gaps, which will thus block the heat conduction between adjacent elements, making it very hot. The heat of the focus ring 12 is not easily transferred to the conductive ring 13 and the pedestal 丨, thereby greatly reducing the back© temperature of the substrate 2 and jl because the conductive ring η has a minimum _ dew on the plasma, so The temperature of the side process towel is lower than the temperature at which the thermal cracking is reached, and the carbide pyrolysis that reaches the edge of the substrate can be effectively prevented from being finally deposited on the back side of the substrate and formed into a polymer. The conductive ring 13 is located above the insulating ring, 12 201112326. It can also be combined with the upper surface of the insulating ring n to form a body; the conductive ring 13 can be made of a conductor material or a semiconductor material. On the other hand, the conductor loop 13 is also capable of enhancing the uniformity of the processing of the substrate. As shown in Fig. 6 and Fig. 6F, it is a schematic diagram of the uniformity of the substrate-reinforcing structure enhancement on the substrate treatment. Conductor ring 13 and electrostatic disk
3和其上的基片2以及週邊的聚焦環12所用的材料電屬性較 近似，都疋導體材料（如：Si或Sic》所以從射頻電極工（射 頻電源往往曰連接至基座！上，因而基座^同時也作用為射 頻電極1)到經過導體環13與聚焦環12能獲得更均勾的電勢 刀佈。其可使得基片2邊緣附近的等電勢線施的分佈絲 月2的平面更平行，與等電勢線鳥相垂直的電場線就 可以使等離子體内的離子沿施方向加速沖向基片2的表面 =對_ 2進行等離子體處理。尤其，在刻2的邊緣 由於導電環13的存在，使得基片邊緣上方的電場線· 二本上與基片2的表面相垂直，也就減小了 =的器件（如_的孔洞）的傾斜(仙㈣情況。由此，本 ^明在最，!、化基片輪廓傾斜縣礎上也—定程度上加強了等 分佈的均一性。因為採用了導體材料的插入環Μ， 離子讀分佈不均，從而保證了餘刻的均—性。 專 作為與圖6的比較，請參閱圖7，圖 少基片背面聚合物的結構t導體環13替換成介電學=減 後’該介電環！3，雜片處理的均一性的影響示意圖:由圖 13 201112326 八。示纟於"電環13，的存在，電勢從射頻電極丄到經過 ^電環13’，的地方時會急劇下降，由此，使基片2邊緣的等 训、.1 30b在基片2的邊緣位置急劇彎曲，由於電場線 β應當與等電勢線30b’相互垂直，在基片2的邊緣的電 ίί3°!與基片表面成非90度的關係，當等離子體内的離 ㈢斜著（即.呈非9Q度的角度）入射到基片2表面使被 Z的基片2邊緣的加工的11件（如_的孔洞）輪廓出現 /’、同時也會造成入射的離子能量和離子密度分佈不同進 而造成钱刻效果不均一。 在不脫離本發明_神和實質的前提下，本發明還可以 =變形。比如，圖2所述結構還可選擇地進-步包括一 覆蓋％ 14 ’所述覆蓋環14圍繞聚焦環12設置、且覆蓋 加111上，纖奴由絕緣材 如圖2所示’所述的導體環13和聚焦環12均是設置在 ，緣11之上的。此時絕緣環u的整個頂部表面 =2和導體環13所覆蓋的，在_過程中，可減小絕= =程頂度部表㈣_子體和/或鱗料_反舰物質的暴 所述的絕緣環11和/或基座i令還可以 部通道，其可將冷卻流體，⑷.翁u、 右干冷 體（如.虱軋或水）傳遞至聚焦環12 /或導魏13 _近表面，例如魏紐傳遞至導體環口 =基座1从靜電卡盤3之咖_，和/或 12和綱13之__顿被侧繼環^絕^ 201112326 % 11之間的介面，用以進一步快速降低触刻過程中基片背面 的溫度’減少熱量，從而進-步減少_氣體和/或揮發^ 產物在基片背面沉積所產生的聚合物。3 and the substrate 2 on it and the peripheral focus ring 12 used in the electrical properties of the material, such as: Si or Sic, so from the RF electrode (RF power is often connected to the base! Therefore, the susceptor ^ also functions as the RF electrode 1) to obtain a more uniform potential knives through the conductor ring 13 and the focus ring 12. This allows the distribution of the equipotential lines near the edge of the substrate 2 to be The plane is more parallel, and the electric field lines perpendicular to the equipotential line bird can accelerate the ions in the plasma toward the surface of the substrate 2 in the direction of application = plasma treatment of _ 2 . Especially, at the edge of the engraved 2 The presence of the conductive ring 13 causes the electric field lines on the edge of the substrate to be perpendicular to the surface of the substrate 2, thereby reducing the tilt of the device (e.g., the hole of _). In the meantime, the surface of the base of the substrate is also tilted to the extent that the uniformity of the equal distribution is also strengthened. Because the insertion ring of the conductor material is used, the ion reading is unevenly distributed, thus ensuring the remaining The uniformity of the engraving. Specifically as compared with Figure 6, Referring to Figure 7, the structure of the polymer on the back side of the substrate is replaced by a dielectric t conductor ring 13 replaced by dielectric = minus 'the dielectric ring! 3, the effect of the uniformity of the chip processing: from Fig. 13 201112326 VIII. In the presence of "Electrical Ring 13, the potential drops sharply from the RF electrode to the place where it passes through the electrical ring 13', thereby causing the edge of the substrate 2 to be trained, .1 30b on the substrate The edge position of 2 is sharply curved, since the electric field line β should be perpendicular to the equipotential line 30b', and the electric 33° at the edge of the substrate 2 is in a non-90 degree relationship with the surface of the substrate, when the plasma is separated (3) Inclining (i.e., at an angle other than 9Q degrees) incident on the surface of the substrate 2 causes the contoured 11 pieces (such as the hole of the _) to appear at the edge of the substrate 2 of the Z, and also causes incident ion energy. Different from the ion density distribution, the effect of the engraving is not uniform. The invention can also be modified without departing from the invention. For example, the structure of Fig. 2 can optionally include a cover. % 14 'the cover ring 14 is disposed around the focus ring 12 and covers the upper portion 111 The conductor ring 13 and the focus ring 12 are formed on the edge 11 by the insulating material as shown in Fig. 2. At this time, the entire top surface of the insulating ring u = 2 and the conductor ring 13 is covered. In the process of _, the insulating ring 11 and/or the pedestal i can be reduced to the channel of the singularity and the squadron. It can transfer the cooling fluid, (4), Weng u, right dry cold body (such as rolling or water) to the focus ring 12 / or guide Wei 13 _ near surface, such as Wei New transmission to the conductor ring mouth = pedestal 1 from static electricity Chuck 3's coffee _, and / or 12 and _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Thus, the step-by-step reduction of the gas and/or volatilization of the product deposits the resulting polymer on the back side of the substrate.
在本發明的另一種實施方式中，如圖3所示，該等離子 體飯刻室⑽結構設置和卫作原理是細2所示的結構相類 似的’區別僅僅在於，目3中絕緣環u頂部表面僅包括聚焦 環12，或者，換言之，圖2所述的覆蓋環14是在聚焦環^ 上形成的徑向向外紗的部分，即在圖3中覆_ 14與聚焦 環12是-體形成的。此時，該覆蓋環14和聚焦環12 ^由: 同的材料製成的。 在本發明的另一種實施方式中，如圖4所示，該等離子 體飯刻室_結構設置和JL作原理是與圖2所示的 似的’區碰僅在於，所述的聚焦環沿著其延伸部⑵的^ 表面被分_成第-聚焦環121和位於其下方的第二聚焦巧 122 ;其中，該第-聚焦環121是圍繞設置於所述基座（的: 周側的；所述的第二聚焦環122所包含的延伸部123仍 伸至基片2背面的邊緣之下’該第二聚焦環122的上表面 為原先聚：!、環延伸部123的上表面，也就是說，本實施例中， 該第二聚焦環122的上表面與導體環13的上表面是基本位 同一平面的。 、 .上述如® 2和圖3所示的實施例，當基片在進行等離子 „程中，在轉子體室内對_反應氣體（由一 多種氣體喊）施減量⑽缝激卿鱗離子體，並1 在該等離僧室中存在可躲產生和維射軸度或高密度 15 201112326 的等離子體的射頻（RF)能量、微波能量和/或磁場；此時， 基片2在蝕刻過程中產生大量的熱’由於導體環η 4有最】 的曝露度，同時由於通過冷卻通道輸入的氦氣等冷卻氣體的 辅助作用，該導體環13的溫度不會達到使得碳化物熱裂解的 .高度，所以可以使到達基片邊緣的碳化物不會遇到溫度高於 熱裂解的部件而蒸發並隨後沉積在基片2的背面的聚合物的 形成’從而可大大減少形成在基片背面的聚合物。 Φ 進一步，在如圖4所示的實施例中，由於其採用了上、 下兩段聚焦環的結構，故位於上方的第一聚焦環121可作為 更靠近基片2背面的下方第二聚焦環122的熱屏障，因為在 真空環境中熱傳遞將變得較慢，又由於上、下聚焦環之間所 存在的間隙，將直接導致熱傳導中斷，所以當原本由上聚焦 環121傳遞至下聚焦環122的熱量被限制中斷後，下聚焦環 122可保持在較低的溫度。由此，在對基片進行等離子蝕刻過 程中，下聚焦環122的溫度不會達到使得其上碳化物熱裂解 • 的高度，所以可以更進-步地限制因下聚焦環122上的碳化 物熱裂解錢發沉積在基片背面的聚合物的形成，從而更有 效的減少形成在基片2背面的聚合物。 如圖5所示，為本發明中通過設置導電聚焦環來減少基 片背面聚合物的一種實施例。該實施例其實是對圖2和圖4 所不的實施例的一種結合應用，等離子體#刻室内的一些部 件’包括基座1、基片2、靜電卡盤3和埋設在該靜電卡盤3 中的直流電極4 ’以及絕緣環1卜覆蓋環14和圍繞設置於基 座1的外周側的上方第一聚焦環12卜其設置均與前述如圖2 16 201112326 的實施例中的設置方法相同，且所具有的技術特 徵和所此達_技術絲也相當。本實施财，只是將圖4 施例中的導體環13和位於基片#面的第二聚焦環122 U成-體，形成由導體材料製成的導體聚焦環ΐ3ι (如圖5 所示），該導體聚焦環131可_、碳切或者石墨等材料製 的上下聚焦環之間也可啸入—薄層的塗層，該 4層具有進-步阻止熱量傳遞的效果。在這2In another embodiment of the present invention, as shown in FIG. 3, the structure of the plasma rice chamber (10) and the principle of the guarding principle are similar to those shown in the thin line 2, the only difference is that the insulating ring u in the head 3 The top surface only includes the focus ring 12, or, in other words, the cover ring 14 illustrated in Figure 2 is the portion of the radially outwardly directed yarn formed on the focus ring ^, i.e., the cover _ 14 and the focus ring 12 in Figure 3 are - Formed by the body. At this time, the cover ring 14 and the focus ring 12^ are made of the same material. In another embodiment of the present invention, as shown in FIG. 4, the plasma rice chamber _ structure setting and JL operation principle are similar to those shown in FIG. 2, and the focus ring edge is The surface of the extension (2) is divided into a first focus ring 121 and a second focus 122 below it; wherein the first focus ring 121 is disposed around the base: The second focus ring 122 includes an extension portion 123 that extends below the edge of the back surface of the substrate 2. The upper surface of the second focus ring 122 is the upper surface of the original gather:!, the loop extension 123. That is, in the embodiment, the upper surface of the second focus ring 122 and the upper surface of the conductor ring 13 are substantially in the same plane. The above embodiments as shown in FIG. 2 and FIG. 3, when the substrate During the plasma process, the _reaction gas (called by a variety of gases) is applied to the rotor body to reduce the amount of the squamous ion, and 1 there is a evasive and recursive axis in the isolating chamber. Degree or high density 15 201112326 plasma radio frequency (RF) energy, microwave energy and / or magnetic field; at this time, The sheet 2 generates a large amount of heat during the etching process because the conductor ring η 4 has the most exposure, and at the same time, the temperature of the conductor ring 13 does not reach carbonization due to the auxiliary action of the cooling gas such as helium gas input through the cooling passage. The height of the thermal cracking, so that the carbide reaching the edge of the substrate can be prevented from encountering the formation of a polymer which evaporates and subsequently deposits on the back side of the substrate 2 at a temperature higher than that of the thermally cracked component, thereby greatly reducing formation. Polymer on the back side of the substrate. Φ Further, in the embodiment shown in Fig. 4, since the upper and lower two-stage focus ring structure is employed, the first focus ring 121 located above can be taken closer to the base. The thermal barrier of the second focus ring 122 below the back of the sheet 2, because the heat transfer will become slower in a vacuum environment, and because of the gap between the upper and lower focus rings, the heat conduction will be directly interrupted, so when After the heat transferred from the upper focus ring 121 to the lower focus ring 122 is interrupted, the lower focus ring 122 can be maintained at a lower temperature. Thus, during the plasma etching of the substrate, The temperature of the focus ring 122 does not reach the height at which the carbides are thermally cracked, so that the formation of the polymer deposited on the back side of the substrate due to the thermal cracking of the carbide on the lower focus ring 122 can be further stepped down. Thereby, the polymer formed on the back surface of the substrate 2 is more effectively reduced. As shown in Fig. 5, an embodiment in which the conductive back focus ring is provided to reduce the polymer on the back surface of the substrate is shown in Fig. 5. This embodiment is actually a figure 2 and a combination of the embodiments of FIG. 4, some components in the plasma chamber include a susceptor 1, a substrate 2, an electrostatic chuck 3, and a DC electrode 4' embedded in the electrostatic chuck 3. And the insulating ring 1 and the upper first ring 12 disposed around the outer peripheral side of the susceptor 1 are disposed in the same manner as in the foregoing embodiment of FIG. 2 16 201112326, and have the technology. The characteristics and the _Technical silk are also equivalent. In this implementation, only the conductor ring 13 in the embodiment of FIG. 4 and the second focus ring 122 U on the surface of the substrate # are formed into a body to form a conductor focus ring ΐ3ι made of a conductor material (as shown in FIG. 5). The conductor focusing ring 131 can also be immersed between the upper and lower focusing rings of materials such as carbon cut or graphite, and the thin layer coating has the effect of preventing heat transfer in an advanced manner. In this 2
=蝴隙是為了在真空謝，達到更好的隔讓 的效果。 由於本實補結合了插人導贿和分段料、環的結 t形成了分段後的導體下絲缝，料在簡化了整個結 募、、且成的基礎上’也可達到上述結構較為複雜的實施例（圖 ' 4)所能達到的相同技術效果。即限制因碳化物 …裂解而蒸發沉積在基片背面的聚合物的形成，有效減少形 成在基片背面的聚合物。並且，料電聚焦環的設置使得^ 在最小化基片輪廓傾斜的基礎上允許㈣環和電極之間的即 輕合，故不會導雜刻過財轉子體在基#表_密度分 佈不均，從而保證了蝕刻的均一性。 X刀 儘管本發明_容已經通過上述優選實施例作了詳細八 紹’但應當認朗上述的描述不應被認為是對本發明的^ 制。在本領域技術人員_了上述内容後，對於本發明的多 種修改和賊鑛是顯而易㈣。因此，本發_保護範^ 應由所附的權利要求來限定。 【圖式簡單說明】 201112326 圖1為現有技術中一種會於基片背面產生聚合物的結構 示意圖。 圖2為本發明提供的可減少基片背面聚合物沉積的結構 的一種實施例的示意圖。 圖3為本發明提供的可減少基片背面聚合物沉積的結構 的第二種實施例的示意圖。 圖4為本發明提供的可減少基片背面聚合物沉積的結構 的第三種實施例的示意圖。 圖5為本發明提供的可減少基片背面聚合物沉積的結構 的第四種實施例的示意圖。 圖6為本發明提供的可減少基片背面聚合物沉積的結構 增強對基片處理的均一性的示意圖。 圖7為將圖6中的導體環替換成介電環後，可減少基片 月面聚合物的結構對基片處理的均—性的影響示意 圖。 【主要元件符號說明】 1 基座 1 射頻電極 I 下電極 101周緣表面 102表面 103外周側 II 絕緣環 111表面 201112326 聚焦環 第一聚焦環 第二聚焦環 延伸部 導體環 導電環 插入環 導體聚焦環 覆蓋環 基片 背面邊緣 支撐件 靜電卡盤 直流電極 電場線 等電勢線 電場線 介電環 等電勢線 電場線= The gap is for the vacuum to achieve a better barrier effect. Since the actual combination combines the introduction of the bribe and the segmentation material, the knot of the ring forms the segmented conductor under the wire seam, which is expected to be able to achieve the above structure on the basis of simplifying the entire collection and integration. The same technical effect can be achieved by the more complicated embodiment (Fig. 4). That is, the formation of a polymer which is evaporated and deposited on the back surface of the substrate by the cracking of the carbide is restricted, and the polymer formed on the back surface of the substrate is effectively reduced. Moreover, the setting of the electric focus ring allows the (four) ring and the electrode to be lightly combined on the basis of minimizing the inclination of the substrate profile, so that the density of the rotor body is not at the base. All, so as to ensure the uniformity of the etching. The present invention has been described in detail by the above-described preferred embodiments, but it should be understood that the above description should not be construed as a limitation of the invention. It will be apparent to those skilled in the art that the various modifications and thieves of the present invention are made (4). Therefore, the present invention is defined by the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS 201112326 Fig. 1 is a schematic view showing a structure in which a polymer is produced on the back surface of a substrate in the prior art. Figure 2 is a schematic illustration of one embodiment of a structure for reducing polymer deposition on the back side of a substrate provided by the present invention. Figure 3 is a schematic illustration of a second embodiment of a structure for reducing polymer deposition on the back side of a substrate provided by the present invention. Figure 4 is a schematic illustration of a third embodiment of a structure for reducing polymer deposition on the back side of a substrate provided by the present invention. Figure 5 is a schematic illustration of a fourth embodiment of a structure for reducing polymer deposition on the back side of a substrate provided by the present invention. Fig. 6 is a schematic view showing the structure of the present invention for reducing the deposition of polymer on the back side of the substrate to enhance the uniformity of the substrate treatment. Fig. 7 is a schematic view showing the effect of reducing the structure of the polymer of the substrate on the substrate to the uniformity of the substrate after replacing the conductor ring of Fig. 6 with a dielectric ring. [Main component symbol description] 1 pedestal 1 RF electrode I Lower electrode 101 Peripheral surface 102 Surface 103 Outer peripheral side II Insulation ring 111 surface 201112326 Focus ring First focus ring Second focus ring Extension Conductor ring Conductor ring Insert ring conductor Focus ring Cover ring substrate back edge support electrostatic chuck DC electrode electric field line equipotential line electric field line dielectric ring equal potential line electric field line