CN112992631B - Lower electrode assembly, installation method thereof and plasma processing device - Google Patents
Lower electrode assembly, installation method thereof and plasma processing device Download PDFInfo
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- CN112992631B CN112992631B CN201911294435.0A CN201911294435A CN112992631B CN 112992631 B CN112992631 B CN 112992631B CN 201911294435 A CN201911294435 A CN 201911294435A CN 112992631 B CN112992631 B CN 112992631B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a lower electrode assembly, a mounting method thereof and a plasma processing device thereof, wherein a dielectric sleeve is arranged between a focusing ring and a dielectric ring and an elastic material layer is arranged in a gap between the dielectric sleeve and a base, so that plasma above a substrate and the focusing ring is prevented from leaking into the gap between the base and an edge ring assembly, and the possibility of arc discharge possibly occurring in the lower electrode assembly is reduced. The invention is limited by the size of the base and each edge ring, and the dielectric sleeve is firstly installed, so that the installation difficulty of arranging the elastic material layer in the gap between the base and the edge ring assembly is greatly reduced, and the use safety of the lower electrode assembly is effectively ensured.
Description
Technical Field
The invention relates to the technical field of plasma etching, in particular to the technical field of plasma treatment for preventing an arc from being generated by a lower electrode assembly under high radio frequency power.
Background
Micromachining of semiconductor substrates or substrates is a well known technique that can be used to fabricate, for example, semiconductors, flat panel displays, light Emitting Diodes (LEDs), solar cells, and the like. An important step in micromachining fabrication is the plasma processing process step, which is performed inside a reaction chamber into which process gases are fed. A radio frequency source is inductively and/or capacitively coupled to the interior of the reaction chamber to energize the process gas to form and sustain a plasma. The exposed substrate is supported by the lower electrode assembly and held in a fixed position by a certain clamping force inside the reaction chamber to ensure the safety of the substrate during the process and the high qualification rate of the process.
The lower electrode assembly includes not only an electrostatic chuck for fixing a substrate and a susceptor for supporting the electrostatic chuck, but also an edge ring assembly disposed around the susceptor, and is used for controlling the temperature, electric field distribution, etc. of the substrate in addition to supporting the fixed substrate during a process for manufacturing the substrate.
In the prior art, the base is made of aluminum, the insert ring material surrounding the periphery of the base is made of ceramic material, and a certain space is arranged between the insert ring and the base to accommodate thermal expansion and contraction of the base because of the large difference of thermal expansion coefficients of the insert ring and the base, so that the base can work in a large temperature range.
As the processing accuracy of the substrate increases, the rf power applied to the reaction chamber increases. High rf power can easily generate discharge in a narrow space within the reaction chamber, damage the susceptor and its peripheral components, and seriously threaten the stability and safety of the operation of the lower electrode assembly, and thus a solution is needed to accommodate the ever-increasing rf power application and substrate processing uniformity requirements.
Disclosure of Invention
In order to solve the above-mentioned problems, the present invention provides a lower electrode assembly for carrying a substrate to be processed, comprising a base, an electrostatic chuck disposed above the base, and an edge ring assembly surrounding the base and the electrostatic chuck, the edge ring assembly comprising:
a focus ring disposed around the substrate and the electrostatic chuck;
the dielectric sleeve is arranged around the base, and a gap is arranged between the dielectric sleeve and the base;
a dielectric ring positioned below the focus ring and surrounding the dielectric sleeve;
and the protection ring is positioned between the focusing ring and the electrostatic chuck, and is made of a plasma corrosion resistant material.
Optionally, an elastic material layer is arranged in the gap.
Optionally, an annular recess is formed around the periphery of the connection surface between the base and the electrostatic chuck, and the protection ring is located in the recess.
Optionally, the radial width of the guard ring is greater than the recess depth of the annular recess groove to fill a gap between the focus ring and the electrostatic chuck.
Optionally, the protection ring is made of a polymer material.
Optionally, the protection ring is hard rubber or epoxy resin.
Optionally, a lower protection ring is disposed below the protection ring, and the material of the lower protection ring is the same as that of the elastic material layer.
Optionally, the lower protection ring and the elastic material layer are made of silica gel.
Optionally, a first step is disposed on the dielectric sleeve, and the first step is used for bearing the lower protection ring.
Optionally, a second step is disposed on the dielectric sleeve, and the second step is used for bearing the dielectric ring.
Optionally, a portion of the focus ring surrounds the dielectric sleeve.
Further, the invention also discloses a plasma processing device, which comprises a vacuum reaction cavity, wherein a lower electrode assembly is arranged in the vacuum reaction cavity, and the lower electrode assembly comprises the characteristics.
Optionally, the vacuum reaction chamber further comprises an upper electrode assembly, and the upper electrode assembly comprises a gas spray head for conveying process gas into the vacuum reaction chamber.
Optionally, an insulating window is disposed above the vacuum reaction chamber, and an inductance coil is disposed above the insulating window.
Further, the invention also discloses a method for installing the lower electrode assembly, which comprises the following steps:
providing a base with an electrostatic chuck;
sleeving a dielectric sleeve on the periphery of a base, wherein a certain gap is arranged between the dielectric sleeve and the base;
injecting an elastic material layer into the gap, wherein the elastic material layer is used for filling the gap;
placing the base and the dielectric sleeve into a reaction cavity;
a protection ring is arranged at one end of the gap, which is close to the electrostatic chuck, and is used for shielding the gap between the focusing ring and the electrostatic chuck;
and the dielectric ring and the focusing ring are sequentially sleeved on the periphery of the dielectric sleeve.
The invention has the advantages that: the invention provides a plasma corrosion resistant lower electrode assembly and an installation method thereof, wherein a dielectric sleeve is arranged between a focusing ring and a base, and an elastic material layer is arranged in a gap between the dielectric sleeve and the base, so that plasma above a substrate and the focusing ring is prevented from leaking into the gap between the base and an edge ring assembly, and the possibility of arc discharge possibly occurring in the lower electrode assembly is reduced. The invention is limited by the size of the base and each edge ring, and the mounting difficulty of arranging the elastic material layer in the gap between the base and the edge ring component is greatly reduced by firstly mounting the dielectric sleeve, so that the problem that the gap between the focusing ring and the electrostatic chuck is too small to arrange the elastic material layer after the insertion ring and the focusing ring are arranged around the base in the prior art is solved. The use safety of the lower electrode assembly is effectively ensured.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 shows a schematic diagram of a capacitively-coupled plasma processing apparatus;
FIG. 2 shows a schematic view of a partial lower electrode assembly structure;
fig. 3 shows a schematic structure of an inductively coupled plasma processing apparatus.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Fig. 1 shows a schematic view of a capacitively coupled plasma processing apparatus including a reaction chamber 100 surrounded by an outer wall 10 and capable of being evacuated. The reaction chamber 100 is used for processing a substrate 103. The reaction chamber comprises a lower electrode assembly which is used for supporting the substrate and controlling the temperature of the substrate, the electric field and other factors influencing the substrate treatment. The lower electrode assembly comprises a base 101 for bearing an electrostatic chuck 102, a temperature control device is arranged in the base 101 and used for controlling the temperature of the upper substrate, the electrostatic chuck 102 is used for bearing a substrate 103, a direct current electrode is arranged in the electrostatic chuck, and direct current adsorption is generated between the back surface of the substrate and the bearing surface of the electrostatic chuck through the direct current electrode so as to fix the substrate. An edge ring assembly 50 is disposed around the pedestal and the periphery of the electrostatic chuck for adjusting the temperature and electric field distribution, etc., at the edge region of the substrate. A plasma confinement ring 108 disposed around the edge ring assembly 50 between the edge ring 50 and the chamber sidewall for confining plasma to the reaction zone while allowing gas to pass therethrough; a ground ring 109, located below the plasma confinement ring, functions to provide electric field shielding to avoid plasma leakage. A bias rf power supply, typically applying a bias rf signal to the bottom electrode assembly, is used to control the direction of bombardment of the plasma. The lower electrode assembly disclosed in the present invention may be used in a capacitively coupled plasma processing apparatus as shown in fig. 1.
In the capacitively coupled plasma processing apparatus shown in fig. 1, an upper electrode assembly is included in addition to a lower electrode assembly, and the upper electrode assembly includes a gas shower head 60 for introducing a process gas in a gas supply device into the reaction chamber. A high-frequency radio-frequency power source applies a high-frequency radio-frequency signal to at least one of the upper electrode assembly or the lower electrode assembly to form a radio-frequency electric field between the upper electrode assembly and the lower electrode assembly, and process gas in the reaction cavity is excited into plasma to realize the treatment of the substrate to be treated by the plasma.
Fig. 2 shows a schematic view of a partial lower electrode assembly structure in which the lower electrode assembly includes: a focus ring 104 disposed around the substrate and the electrostatic chuck for adjusting a temperature and an electric field distribution of an edge region of the substrate, etc.; a dielectric ring 105 is disposed below the focus ring for maintaining a potential difference between the focus ring and the base and adjusting a temperature of the focus ring. A dielectric sleeve 120 is disposed between the dielectric ring 105 and the base, and the dielectric sleeve is made of the same material as the dielectric ring or has an approximate thermal expansion coefficient, so that the dielectric sleeve 120 and the dielectric ring 105 have an approximate thermal expansion amplitude when the lower electrode assembly is heated. In an embodiment of the present invention, a dielectric sleeve 120 is at least partially positioned between the focus ring 104 and the base 101 to ensure electrical isolation between the conductive base and focus ring.
In the present invention, the base 101 is made of a conductive metal material, such as aluminum, and the dielectric ring 105 surrounding the base is made of a ceramic material, and a certain gap is required between the dielectric ring and the base during installation because the thermal expansion coefficients of the base 101 and the dielectric ring 105 are different to prevent the components from being extruded due to heating. As the processing accuracy of the substrate increases, the rf power applied to the reaction chamber increases. The high radio frequency power can easily generate discharge in a narrow space in the reaction cavity, damage the base and peripheral components thereof, and seriously threaten the stability and safety of the working of the lower electrode component.
The dielectric sleeve 120 in this embodiment is disposed between the dielectric ring 105 and the base 101, and the material may be ceramic, so that a very small gap or no gap may be disposed between the two components due to the same or similar thermal expansion coefficient between the dielectric sleeve 120 and the dielectric ring 105, and the dielectric sleeve 120 and the dielectric ring 105 belong to two independent components, so that the stress generated by heating can be better released, and the gap between the dielectric sleeve 120 and the base can be correspondingly reduced. According to the arc discharge principle, on the premise of the same air pressure and the applied electric field, the larger the gas diffusion space is, the easier the arc discharge is generated, so that the probability of the arc discharge can be effectively reduced by reducing the gap between the dielectric sleeve 120 and the base, and the safe voltage working range of the lower electrode assembly is improved.
The dielectric sleeve is usually sleeved on the periphery of the base after the base is manufactured, and a certain gap 113 is required between the dielectric sleeve 120 and the base 101 in order to ensure that the dielectric sleeve is smoothly sleeved on the periphery of the base and also reserve a certain space for thermal expansion and contraction of the base and the dielectric sleeve. The focus ring 104 is disposed around the periphery of the substrate 103 and the electrostatic chuck 102, and a certain gap is required between the focus ring and the electrostatic chuck in consideration of the accuracy of mounting and the difference in thermal expansion amplitude between the focus ring and the electrostatic chuck. The gas or plasma in the reaction chamber diffuses downward along the gap, and when the rf voltage applied to the susceptor is too high, the gap between the susceptor and the edge ring assembly may generate an arc discharge phenomenon, causing damage to the lower electrode assembly, thus requiring treatment.
The invention sets a protection ring 111 with resistance to plasma corrosion between the electrostatic chuck 102 and the focusing ring 104, the protection ring can be made of materials such as rubber with resistance to plasma corrosion, and an annular containing groove is set at the edge area of the electrostatic chuck 102 or the edge area of the interface between the electrostatic chuck and the base 101 to contain and position the protection ring 111, optionally, the width of the protection ring 111 in radial direction is larger than the radial depth of the annular containing groove to fill the gap between the focusing ring and the electrostatic chuck.
In addition, to further reduce the probability of arcing between the edge ring assembly and the susceptor, after the dielectric sleeve 120 is sleeved around the periphery of the susceptor, a layer of elastomeric material 113 may be disposed in the gap between the dielectric sleeve 120 and the susceptor. The elastic material layer 113 may be made of the same material as the guard ring and integrally formed therewith. Considering that the texture of the elastic material layer is softer and the capability of resisting plasma corrosion is weaker, in order to improve the service life of the protection ring 111, the elastic material layer 113 and the protection ring 111 may be made of different materials, the protection ring and the elastic material layer may be made of polymer materials, and the protection ring may be made of hard rubber or other materials. Alternatively, as shown in fig. 3, a lower guard ring 112 is disposed below the guard ring 111, and optionally, the lower guard ring 112 has the same material as the elastic material layer 113, and may be integrally formed, or may be separately formed and sequentially installed in a gap between the dielectric sleeve and the base and a gap between the focus ring and the base.
The guard ring 111 may be effectively filled in the gap between the focus ring and the electrostatic chuck and the pedestal to prevent the upper plasma from corroding the bonding layer (not shown) between the electrostatic chuck 102 and the pedestal 101, and to reduce arcing due to the entry of the tissue plasma into the lower gap.
The elastic material layer 113 arranged between the dielectric sleeve 120 and the base can relieve extrusion caused by different thermal expansion amplitudes between different materials, meanwhile, the problem of arc discharge possibly caused by gaps between the base and the edge ring assembly is avoided, and the working range of radio frequency voltage applied to the base is improved. Thereby being suitable for processing the substrate with higher precision.
The dielectric sleeve can be arranged on other protruding parts on the side of the base and can also be arranged above other supporting devices, the invention is not described in detail, the dielectric sleeve is respectively provided with a step 121 and a step 122, the step 121 is used for supporting the lower protection ring 112, the step 122 is used for bearing the dielectric ring 105, when the dielectric ring 105 is located on the step 122, the tight contact between the dielectric ring and the step 122 can be realized through the gravity of the dielectric ring or the externally applied pressure, the downward diffusion of gas entering a gap between the focusing ring 104 and the dielectric sleeve is avoided, and the possible arc discharge problem is further avoided.
Optionally, a thermally conductive layer 106 is disposed between the focus ring 104 and the dielectric ring 105, and/or a thermally conductive layer 107 is disposed between the dielectric ring 105 and the susceptor to improve the conductivity to the focus ring temperature. In other embodiments, the dielectric ring may be disposed over other support members capable of independent temperature control to achieve independent temperature control of the focus ring as distinguished from the substrate.
Optionally, the present invention also provides a method of installing a lower electrode assembly, comprising the steps of:
providing a base 101 with an electrostatic chuck 102;
sleeving a dielectric sleeve 120 on the periphery of the base 101, wherein a certain gap exists between the dielectric sleeve 120 and the base 101;
injecting an elastic material layer into the gap, wherein the elastic material layer is used for filling the gap;
placing the base and the dielectric sleeve into a reaction cavity;
a protection ring is arranged at one end of the gap, which is close to the electrostatic chuck, and is used for shielding the gap between the focusing ring and the electrostatic chuck;
the dielectric ring 105 and the focus ring 104 are sequentially sleeved on the periphery of the dielectric sleeve 120.
The bottom electrode assembly described above can also be used in the inductively coupled plasma processing apparatus shown in fig. 3, in which the bottom electrode assembly has the structure described above, and not described here again, an insulating window 130 is disposed above the reaction chamber, an inductor 140 is disposed above the insulating window, a high-frequency rf power source 145 applies rf signals to the inductor 140, the inductor 140 generates an alternating magnetic field, and an alternating electric field is induced in the reaction chamber to achieve plasma dissociation of the process gas entering the reaction chamber. In this embodiment, the process gas may be injected into the reaction chamber from the side wall of the reaction chamber, or a gas injection port may be provided on the insulating window to accommodate the process gas. A bias RF power source is applied to the lower electrode assembly through a bias RF match for controlling the energy distribution of the plasma.
According to the invention, the dielectric sleeve is arranged between the focusing ring and the dielectric ring and the base, and the elastic material layer is arranged in the gap between the dielectric sleeve and the base, so that plasma above the substrate and the focusing ring is prevented from leaking into the gap between the base and the edge ring assembly, and the possibility of arc discharge possibly occurring in the lower electrode assembly is reduced. The invention is limited by the size of the base and each edge ring, and the mounting difficulty of arranging the elastic material layer in the gap between the base and the edge ring component is greatly reduced by firstly mounting the dielectric sleeve, so that the problem that the gap between the focusing ring and the electrostatic chuck is too small to arrange the elastic material layer after the insertion ring and the focusing ring are arranged around the base in the prior art is solved. The use safety of the lower electrode assembly is effectively ensured.
The lower electrode assembly disclosed in the present invention is not limited to be applied to the plasma processing apparatus of the above two embodiments, but may be applied to other plasma processing apparatuses, and will not be described herein.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (14)
1. A lower electrode assembly for carrying a substrate to be processed, comprising a pedestal, an electrostatic chuck disposed above the pedestal, and an edge ring assembly surrounding the pedestal and the electrostatic chuck, the edge ring assembly comprising:
a focus ring disposed around the substrate and the electrostatic chuck;
the dielectric sleeve is arranged around the base, and a gap is arranged between the dielectric sleeve and the base;
a dielectric ring positioned below the focus ring and surrounding the dielectric sleeve;
a guard ring positioned between the focus ring and the electrostatic chuck, the guard ring being of a plasma resistant material;
an elastic material layer is arranged in the gap.
2. The lower electrode assembly of claim 1, wherein: an annular concave groove is formed around the periphery of the connecting surface of the base and the electrostatic chuck, and the protection ring is positioned in the concave groove.
3. The lower electrode assembly of claim 2, wherein: the radial width of the guard ring is greater than the recess depth of the annular recess groove to fill a gap between the focus ring and the electrostatic chuck.
4. The lower electrode assembly of claim 1, wherein: the protection ring is made of a high polymer material.
5. The lower electrode assembly of claim 1, wherein: the protection ring is made of hard rubber or epoxy resin.
6. The lower electrode assembly of claim 1, wherein: a lower protection ring is arranged below the protection ring, and the material of the lower protection ring is the same as that of the elastic material layer.
7. The lower electrode assembly of claim 6, wherein: the lower protection ring and the elastic material layer are made of silica gel.
8. The lower electrode assembly of claim 6, wherein: the dielectric sleeve is provided with a first step which is used for bearing the lower protection ring.
9. The lower electrode assembly of claim 1, wherein: the dielectric sleeve is provided with a second step which is used for bearing the dielectric ring.
10. The lower electrode assembly of claim 1, wherein: a portion of the focus ring surrounds the dielectric sleeve.
11. A plasma processing apparatus comprising a vacuum reaction chamber, characterized in that: a lower electrode assembly disposed within the vacuum reaction chamber, the lower electrode assembly comprising the features of any one of claims 1-10.
12. The plasma processing apparatus according to claim 11, wherein: the vacuum reaction chamber also comprises an upper electrode assembly, and the upper electrode assembly comprises a gas spray header for conveying process gas into the vacuum reaction chamber.
13. The plasma processing apparatus according to claim 11, wherein: an insulating window is arranged above the vacuum reaction cavity, and an inductance coil is arranged above the insulating window.
14. A method of installing a lower electrode assembly, characterized by: comprises the following steps:
providing a base with an electrostatic chuck;
sleeving a dielectric sleeve on the periphery of a base, wherein a certain gap is arranged between the dielectric sleeve and the base;
injecting an elastic material layer into the gap, wherein the elastic material layer fills the gap;
placing the base and the dielectric sleeve into a reaction cavity;
a protection ring is arranged at one end of the gap, which is close to the electrostatic chuck;
the dielectric ring and the focusing ring are sleeved on the periphery of the dielectric sleeve in sequence;
the guard ring is used for shielding a gap between the focus ring and the electrostatic chuck.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911294435.0A CN112992631B (en) | 2019-12-16 | 2019-12-16 | Lower electrode assembly, installation method thereof and plasma processing device |
| TW109139548A TWI797498B (en) | 2019-12-16 | 2020-11-12 | Bottom electrode element, its mounting method and plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911294435.0A CN112992631B (en) | 2019-12-16 | 2019-12-16 | Lower electrode assembly, installation method thereof and plasma processing device |
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| Publication Number | Publication Date |
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| CN112992631A CN112992631A (en) | 2021-06-18 |
| CN112992631B true CN112992631B (en) | 2023-09-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201911294435.0A Active CN112992631B (en) | 2019-12-16 | 2019-12-16 | Lower electrode assembly, installation method thereof and plasma processing device |
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| CN (1) | CN112992631B (en) |
| TW (1) | TWI797498B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116525394A (en) * | 2022-01-24 | 2023-08-01 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, plasma processing device and assembly method thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN112992631A (en) | 2021-06-18 |
| TWI797498B (en) | 2023-04-01 |
| TW202139231A (en) | 2021-10-16 |
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