CN101989543A - Device for reducing polymers at back side of substrate - Google Patents
Device for reducing polymers at back side of substrate Download PDFInfo
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- CN101989543A CN101989543A CN2009100560869A CN200910056086A CN101989543A CN 101989543 A CN101989543 A CN 101989543A CN 2009100560869 A CN2009100560869 A CN 2009100560869A CN 200910056086 A CN200910056086 A CN 200910056086A CN 101989543 A CN101989543 A CN 101989543A
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- ring
- substrate
- backside
- susceptor
- reducing polymer
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- 239000000758 substrate Substances 0.000 title claims abstract description 152
- 229920000642 polymer Polymers 0.000 title claims abstract description 56
- 238000001020 plasma etching Methods 0.000 claims abstract description 30
- 230000002093 peripheral effect Effects 0.000 claims abstract description 18
- 230000017525 heat dissipation Effects 0.000 claims description 44
- 238000001816 cooling Methods 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 6
- 238000005530 etching Methods 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 15
- 230000008569 process Effects 0.000 abstract description 13
- 230000005855 radiation Effects 0.000 abstract description 7
- 239000011810 insulating material Substances 0.000 abstract description 5
- 238000005336 cracking Methods 0.000 abstract description 2
- 238000004227 thermal cracking Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- -1 quartz Chemical compound 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
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- 239000006227 byproduct Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Drying Of Semiconductors (AREA)
Abstract
The invention provides a device for reducing polymers at the back side of a substrate, which is arranged in a plasma etching chamber and comprises a focusing ring, a low-temperature ring and a heat radiation ring, wherein the focusing ring is arranged around the outer peripheral side of a base, and is provided with an extending part which extends under the edge of the back side of the substrate, the low-temperature ring is arranged under the back side of the substrate, and is positioned between the outer peripheral side and the extending part of the focusing ring, and the heat radiation ring is positioned under the low-temperature ring, is arranged around the outer peripheral side of the base, and is made of high-heat-conductivity electrical insulating material. The invention can fast conduct heat on the low-temperature ring through the low-temperature ring and the heat radiation ring, so that the temperature on the low-temperature ring is lower than the heat cracking temperature, and finally, the polymers deposited and generated on the low-temperature ring in the etching process can be reduced.
Description
Technical Field
The invention relates to the field of plasma processing devices, in particular to a device for reducing polymer on the back surface of a substrate by arranging a low-temperature ring and a heat dissipation ring to reduce the temperature of the back surface of the substrate in the substrate etching process.
Background
During plasma etching of a substrate, as shown in fig. 1, a susceptor 1 ', a support member, typically an electrostatic chuck 3 ' (ESC), on a surface of the susceptor 1 ', and a dc electrode 4 ' buried in the electrostatic chuck 3 ' are provided in a plasma etching chamber. A substrate 2 'to be etched is mounted on the electrostatic chuck 3'. The plasma chamber further comprises an insulating ring 11 'surrounding the outer circumference side of the susceptor 1', which may be made of quartz; a focus ring 12 ' disposed around the substrate 2 ' and above and adjacent to the insulating ring 11 ', the focus ring 12 ' being disposed below a peripheral portion of the rear surface of the substrate 2 ', i.e., a gap is provided between an upper surface of the focus ring 12 ' and the rear surface of the substrate 2 '; and a cover ring 14 ' disposed around the focus ring 12 ' for covering the insulating ring 11 '.
In performing etching, an etching reactant gas (comprised of one or more gases) is energized within a plasma chamber to energize the gas into a plasma, and there is Radio Frequency (RF) energy, microwave energy, and/or a magnetic field within the plasma chamber that can be used to generate and sustain a medium or high density plasma; at this time, the temperature may be heated to a high level by the plasma due to the exposure of the focus ring 12' to the plasma; in this case, the temperature of the focus ring 12 'near the back of the substrate 2' is high enough to cause the fluorocarbon or hydrocarbon on the focus ring 12 'to thermally crack and deposit on the back edge of the substrate 2' to form a polymer on the back of the substrate (which is also a main cause of polymer formation on the back of the substrate), resulting in further processing of these accumulated polymers in subsequent processing steps.
In the prior art, in order to reduce the polymer produced on the back of the substrate 2 ', this is achieved by interposing an intermediate ring 13' between the focusing ring 12 'and the base 1' (comprising the electrostatic chuck 3 ') below the back of the substrate 2' (as shown in fig. 1); gaps exist between the intermediate ring 13 'and the focusing ring 12', the base 1 'and the back surface of the substrate 2', respectively; the intermediate ring 13 ' is positioned on the insulating ring 11 ', and can be combined with the upper surface of the insulating ring 11 ' into a whole; the intermediate ring 13' may be made of quartz; since the intermediate ring 13 'has a minimum exposure to plasma, its temperature during etching is lower than the temperature at which thermal cracking is achieved, which effectively prevents thermal cracking of the carbides on the intermediate ring and ultimately reduces the formation of polymer on the backside of the substrate 2'.
However, this method has the significant disadvantage that, in order to ensure that the intermediate ring 13 'is not heated by the plasma, the intermediate ring 13' must be covered by the substrate, i.e. the outer diameter of the intermediate ring is smaller than the substrate diameter. The peripheral high temperature focus ring 12 'extends partially into the substrate backside so that the high temperature of the extended portion of the focus ring 12' still causes a small amount of fluorocarbon to crack and deposit on the nearby substrate backside. Meanwhile, since the intermediate ring 13 'is heated by the extension of the adjacent focus ring 12', the temperature on the intermediate ring 13 'fluctuates up and down in each plasma processing flow with different parameters, and although the intermediate ring 13' is thermally isolated from the adjacent focus ring 12 ', a small amount of heat is conducted from the focus ring to the intermediate ring 13', and the temperature of the intermediate ring gradually rises with the accumulation of time, and finally even exceeds the thermal cracking temperature, so that polymer deposition occurs on the back surface of the substrate.
Disclosure of Invention
The invention aims to provide a device for reducing polymer on the back surface of a substrate, which can quickly conduct heat concentrated on the back surface of the substrate to the outside, thereby effectively reducing the temperature of the edge of the back surface of the substrate in the etching process and finally reducing the polymer deposited on the back surface of the substrate in the etching process.
In order to achieve the above objects, the present invention provides an apparatus for reducing polymer on the backside of a substrate, which surrounds the outer circumferential side of a susceptor of the substrate disposed in a plasma etching chamber, wherein the edge of the substrate protrudes from the upper surface edge of the susceptor;
the apparatus for reducing polymer on the backside of a substrate comprises: a focusing ring surrounding the outer periphery of the base; the focus ring has an extension that extends at least partially below the edge of the backside of the substrate; a low temperature ring disposed below the back surface of the substrate and between the outer periphery of the susceptor and the extension of the focus ring; and a heat dissipating ring disposed below the low temperature ring and around an outer circumferential side of the susceptor.
In the invention, the upper surface of the low-temperature ring and the upper surface of the focusing ring extension part are positioned on the same plane; a gap is arranged between the substrate and the back surface of the substrate.
In the invention, the plasma etching chamber also comprises an insulating ring arranged around the heat dissipation ring; the focusing ring is arranged on the insulating ring and covers the top surface of the whole insulating ring.
In another technical scheme of the invention, a plurality of cooling channels can be arranged in the heat dissipation ring and used for transferring a cooling object to the low-temperature ring.
In another technical solution of the present invention, the heat dissipation ring may be a vertical ring interposed between the base and the insulation ring. The heat dissipation ring can also be an L-shaped heat dissipation ring, the vertical ring part of the L-shaped heat dissipation ring is arranged between the base and the insulating ring, and the transverse ring part is arranged below the insulating ring.
Further, the apparatus for reducing polymer on the back surface of the substrate according to the present invention further comprises a cover ring disposed around the outer circumference of the focus ring and covering the upper surface of the insulating ring at the outer diameter thereof. Alternatively, the cover ring may be a radially outwardly extending portion formed on the focus ring, i.e., the cover ring is integrally formed with the focus ring.
Further, the apparatus for reducing polymer on the backside of a substrate according to the present invention further comprises a plurality of cooling channels disposed through the insulating ring, which deliver a cooling object to the cryogenic ring.
The heat dissipation ring is made of an electrically insulating material with high thermal conductivity, such as aluminum nitride or aluminum oxide.
The low-temperature ring can be made of materials such as silicon, silicon carbide or graphite.
The focus ring may be made of a semiconductor or conductive material, including silicon (e.g., single crystal silicon or polycrystalline silicon), silicon carbide (e.g., silicon carbide by chemical vapor deposition), aluminum oxide, aluminum nitride, silicon nitride, or quartz, among others. Since the focus ring will be directly exposed to the plasma during plasma etching of the substrate, it may be preferably made of a high purity material, such as silicon (e.g., single or polycrystalline silicon), or silicon carbide (e.g., silicon carbide by chemical vapor deposition), etc.
The insulating ring may be made of a ceramic material (e.g., silicon oxide, i.e., quartz, or aluminum oxide), or a polymer material (e.g., polyimide), etc.; preferably, the insulating ring is made of quartz material.
In accordance with the apparatus for reducing polymer on the backside of a substrate provided above, the present invention also provides a plasma etching chamber comprising the apparatus, the plasma etching chamber having: a substrate, a base for placing the substrate, and a means for reducing polymer on the back side of the substrate disposed around the outer periphery of the base; wherein,
the edge of the substrate protrudes out of the edge of the upper surface of the base;
the device for reducing polymer on the back of the substrate comprises: a focusing ring surrounding the outer periphery of the base; the focus ring has an extension that extends at least partially below the edge of the backside of the substrate; a low temperature ring disposed below the back surface of the substrate and between the outer periphery of the susceptor and the extension of the focus ring; and a heat dissipating ring disposed below the low temperature ring and around an outer circumferential side of the susceptor.
The susceptor also includes a substrate support on an upper surface thereof for mounting a substrate, the substrate support including an electrostatic chuck and a dc electrode embedded in the electrostatic chuck.
In the invention, the upper surface of the low-temperature ring and the upper surface of the focusing ring extension part are positioned on the same plane; a gap is arranged between the substrate and the back surface of the substrate.
In the invention, the plasma etching chamber also comprises an insulating ring arranged around the heat dissipation ring; the focusing ring is arranged on the insulating ring and covers the top surface of the whole insulating ring.
In another technical scheme of the invention, a plurality of cooling channels can be arranged in the heat dissipation ring and used for transferring a cooling object to the low-temperature ring.
In another technical solution of the present invention, the heat dissipation ring may be a vertical ring interposed between the base and the insulation ring. The heat dissipation ring can also be an L-shaped heat dissipation ring, the vertical ring part of the L-shaped heat dissipation ring is arranged between the base and the insulating ring, and the transverse ring part is arranged below the insulating ring.
Further, the apparatus for reducing polymer on the back surface of the substrate according to the present invention further comprises a cover ring disposed around the outer circumference of the focus ring and covering the upper surface of the insulating ring at the outer diameter thereof. Alternatively, the cover ring may be a radially outwardly extending portion formed on the focus ring, i.e., the cover ring is integrally formed with the focus ring.
Further, the apparatus for reducing polymer on the backside of a substrate described in the present invention further comprises a plurality of cooling channels disposed through the insulating ring and/or the susceptor, which deliver a cooling object to the cryogenic ring.
In another aspect of the present invention, there is provided an apparatus for reducing polymer on a backside of a substrate, which surrounds an outer circumferential side of a susceptor of the substrate disposed in a plasma etching chamber, an edge of the substrate protruding from an edge of an upper surface of the susceptor, wherein the apparatus for reducing polymer on the backside of the substrate comprises:
a focusing ring surrounding the outer periphery of the base; a low temperature ring disposed below the back surface of the substrate and between the outer periphery of the susceptor and the focus ring; and a heat dissipating ring disposed below the low temperature ring and around an outer circumferential side of the susceptor, wherein the heat dissipating ring is made of a high thermal conductive material.
Wherein, the edge of the low-temperature ring protrudes out of the edge of the substrate, namely, part of the upper surface of the low-temperature ring is directly exposed to the plasma; wherein only less than 20% of the area of the upper surface of the cryogenic ring is exposed to the plasma.
In the technical scheme provided by the invention, the low-temperature ring inserted and arranged has the minimum exposure degree in the plasma etching process of the substrate, and simultaneously, the temperature of the conductor ring does not reach the height of thermal cracking of carbide on the focusing ring due to the action of a cooling object input through the cooling channel in the insulating ring or the base, so that the formation of polymer evaporated and deposited on the back surface of the substrate due to the thermal cracking of the carbide on the focusing ring can be limited, and the polymer formed on the back surface of the substrate can be greatly reduced. In addition, the invention also sets a heat radiation ring made of high heat conduction material under the low temperature ring, the heat radiation ring is set between the base and the insulating ring, so it can be used as the heat exchange bridge between the focusing ring and/or the low temperature ring on the back of the substrate and the outside, that is, when the heat generated in the etching process of the substrate is conducted to the focusing ring and/or the low temperature ring on the back of the substrate, the heat radiation ring can conduct the heat to the outside rapidly, achieving the purpose of heat radiation and cooling.
Secondly, the radiating ring can adopt various forms, wherein the radiating ring with the L-shaped section is preferably adopted, and the radiating ring is provided with 2 ring surfaces which are adjacent to the base, so that the arrangement and the positioning are more reliable and stable, the radiating area is fully utilized, and the radiating speed can be further effectively improved; that is, the larger the area of the 2 ring surfaces of the L-shaped heat dissipation ring adjacent to the base is, the faster the outward conduction diffusion speed of the heat to the back surface of the substrate is. In addition, a plurality of cooling channels can be selectively arranged in the radiating ring, and the cooling speed of the heat on the back surface of the substrate can be further accelerated by cooling objects introduced from the cooling channels.
Based on the above, in the plasma etching process of the substrate, the invention can rapidly conduct and diffuse the heat on the back of the substrate to the outside, and rapidly and effectively cool the temperature of the low-temperature ring and/or the focus ring on the back of the substrate, so that the time for maintaining the temperature at which the carbide on the focus ring can be thermally cracked on the back of the substrate is as short as possible or even none; thereby effectively reducing the formation of polymer evaporated on the back surface of the substrate by thermal cracking of the carbide on the focus ring.
Finally, since the arrangement of the conductor ring in the present invention allows RF coupling between the focus ring and the electrode while minimizing substrate profile tilt, non-uniformity in the plasma density distribution over the substrate surface during etching is not induced, thereby ensuring uniformity of etching.
Drawings
FIG. 1 is a schematic diagram of a prior art method for reducing polymer on the backside of a substrate by interposing a dielectric ring;
FIG. 2 is a schematic view of a first embodiment of an apparatus for reducing polymer on the backside of a substrate provided in the present invention;
FIG. 3 is a schematic view of a second embodiment of an apparatus for reducing polymer on the backside of a substrate provided in the present invention;
FIG. 4 is a schematic view of a third embodiment of an apparatus for reducing polymer on the backside of a substrate provided in the present invention;
fig. 5 is a schematic view of a fourth embodiment of an apparatus for reducing polymer on the backside of a substrate provided in the present invention.
Detailed Description
The present invention will be described in detail below with reference to fig. 2 to 5, which are several preferred embodiments.
Fig. 2 illustrates an embodiment of an apparatus for reducing polymer on the backside of a substrate according to the present invention. In this embodiment, a substrate 2 and a susceptor 1 are provided in a plasma etching chamber for plasma etching a substrate, and a substrate support for mounting the substrate 2 is provided on an upper surface 102 of the susceptor; the substrate support comprises an electrostatic chuck 3, typically made of a ceramic material, and a dc electrode 4 embedded within the electrostatic chuck 3; after the substrate 2 is mounted on the substrate support, its edge protrudes beyond the edge of the upper surface 102 of the susceptor 1 (and also beyond the edge of the electrostatic chuck 3). The plasma etching chamber also comprises an insulating ring 11 surrounding the outer periphery of the base 1; it may be made of a ceramic material (such as silicon oxide, i.e. quartz, or aluminum oxide), or a polymer material (such as polyimide), etc.; preferably, the insulating ring is made of quartz material; the insulating ring 11 may be directly rested on the upper peripheral surface 101 of the base 1 or may be fixed on the upper peripheral surface 101 of the base 1 by a plurality of screws.
Most importantly, in the plasma etching chamber of the embodiment, the device for reducing the polymer on the back side of the substrate, which is surrounded and arranged on the outer periphery side of the base 1, is also provided; the device comprises: focus ring 12, cryo-ring 13, cover ring 14 and heat sink ring 15. Wherein, the focusing ring 12 is positioned on the insulating ring 11 and is arranged around the outer periphery of the base 1; at this time, the entire top surface of the insulating ring 11 is covered by the focus ring 12, and the exposure of the top surface of the insulating ring 11 to plasma and/or reactive substances of the plasma can be reduced during the etching process. The focus ring 12 has an extension 123 extending below the back edge of the substrate 2; the focus ring 12 further includes a focus ring chuck (not shown) disposed on the upper surface of the insulating ring 11 and configured to be matched with the focus ring 12, for fixing the bottom of the focus ring 12 and the upper surface of the insulating ring 11 by clamping. The focus ring 12 may be made of a semiconductor or conductive material, including silicon (e.g., single crystal silicon or polycrystalline silicon), silicon carbide (e.g., silicon carbide obtained by chemical vapor deposition), or an insulating material such as aluminum oxide, aluminum nitride, silicon nitride, or quartz, preferably a conductive or semiconductor material. Since the focus ring will be directly exposed to the plasma during plasma etching of the substrate, it may be preferably made of a high purity material, such as silicon (e.g., single or polycrystalline silicon), or silicon carbide (e.g., silicon carbide by chemical vapor deposition), etc.
The low-temperature ring 13 is inserted and arranged below the back surface of the substrate 2 and between the focusing ring 12 and the base 1; the low temperature ring can be made of a conductor material to reduce the inclination angle of ion incidence in the edge area of the substrate during etching to obtain better etching uniformity. The low temperature ring 13 may also be made of an insulating material, and different materials may be selected according to design requirements as long as a lower temperature of the backside of the substrate can be maintained. Preferably, the cryogenic ring 13 may be made of silicon, silicon carbide, or graphite. Further, a gap is provided between the upper surface of the low temperature ring 13 and the back surface of the substrate 2, and the upper surface of the low temperature ring 13 and the upper surface of the focus ring extension 123 are substantially in the same plane, and a radial gap may be provided or may be closely attached between the low temperature ring 13 and the focus ring extension 123 and the outer peripheral side of the susceptor 1.
The cover ring 14 is disposed around the focus ring 12 and covers the upper surface 111 at the outer diameter of the insulating ring 11. The cover ring 14 may be made of a conductive semiconductor material such as silicon, silicon carbide, or the like, or an insulating material such as aluminum oxide, aluminum nitride, silicon nitride, or the like, preferably an insulating material.
The heat dissipation ring 15 is located below the low temperature ring 13 and arranged around the outer periphery of the base 1, the cross section of the heat dissipation ring 15 is in an L shape, the vertical ring part of the heat dissipation ring 15 is located between the base 1 and the insulating ring 11, and the transverse ring part of the heat dissipation ring is located below the insulating ring 11. The heat dissipation ring 15 is made of a high thermal conductive material, such as aluminum nitride or aluminum oxide.
In this embodiment, a plurality of cooling channels may be further disposed through the insulating ring 11 and/or the susceptor 1 and/or the heat dissipation ring 15, and may transmit a cooling object (such as helium or water) to the adjacent surface of the focus ring 12 and/or the low temperature ring 13, for example, the helium is transmitted to the gap between the low temperature ring 13 and the susceptor 1 and the electrostatic chuck 3, and/or transmitted to the gap between the focus ring 12 and the low temperature ring 13, and/or transmitted to the gap between the heat dissipation ring 15 and the susceptor 1 and the insulating ring 11, so as to further rapidly reduce the temperature of the backside of the substrate during the etching process, and to dissipate heat, thereby further reducing polymers generated by deposition of the etching gas and/or volatile byproducts on the backside of the substrate.
In another embodiment of the present invention, as shown in FIG. 3, the structural arrangement and operating principles within the plasma etch chamber are similar to those of the embodiment of FIG. 2, except that the cover ring 14 is a radially outwardly extending portion formed on the focus ring 12, i.e., the cover ring 14 is integrally formed with the focus ring 12. At this time, the cover ring 14 and the focus ring 12 are made of the same material.
In another embodiment of the present invention, as shown in FIG. 4, the structural arrangement and operation principle of the plasma etching chamber are similar to those of the embodiment shown in FIG. 2 except that the heat dissipation ring 15 has a vertical cross-section, which is only vertically interposed between the susceptor 1 and the insulation ring 11. Similarly, the vertical heat dissipation ring 15 in this embodiment is also made of a high thermal conductivity material, such as aluminum nitride or aluminum oxide. Also, cooling channels may be provided in the heat sink ring 15 to further rapidly reduce the temperature of the backside of the substrate during etching.
In another embodiment of the present invention, as shown in FIG. 5, the structural arrangement and operating principles within the plasma etch chamber are similar to those of the embodiment of FIG. 4, except that the cover ring 14 is a radially outwardly extending portion formed on the focus ring 12, i.e., the cover ring 14 is integrally formed with the focus ring 12. At this time, the cover ring 14 and the focus ring 12 are made of the same material.
In the 4 embodiments shown above, since the inserted low temperature ring 13 has the minimum exposure during the plasma etching process of the substrate 2 when the substrate 2 is subjected to the plasma etching process, and the temperature of the low temperature ring 13 does not reach a level at which the carbide on the focus ring 12 is thermally cracked due to the cooling object introduced through the insulating ring 11 or the cooling channel in the susceptor 1, the formation of the polymer evaporated and deposited on the back surface of the substrate 2 due to the thermal cracking of the carbide on the focus ring 12 can be restricted, so that the polymer formed on the back surface of the substrate can be greatly reduced. And, the invention still further sets up a heat-dissipating ring 15 made of high heat conduction material under the said low temperature ring 13 at the same time, the heat-dissipating ring 15 locates between base 1 and insulating ring 11, so it can be regarded as the heat exchange bridge between low temperature ring 13 of the back of the substrate and the outside, that is, when the heat produced in etching process of the substrate 2 is transmitted to the low temperature ring 13 of the back of the substrate concentratedly, the heat of the heat-dissipating ring 15 of the high heat conduction can be conducted outside rapidly, achieve the goal of heat-dissipating cooling. Because the heat dissipation ring 15 can dissipate the heat on the low temperature ring 13, the low temperature ring can be kept below the thermal cracking temperature, even if a part of the low temperature ring 13 is exposed to the plasma, i.e. the outer diameter of the low temperature ring 13 is larger than the diameter of the substrate (e.g. the area of the protruding part is smaller than 20% of the total area), as long as the heat dissipation capability of the heat dissipation ring 15 is larger than the heat brought by the plasma to the protruding area of the low temperature ring 13, the achievement of the object of the present invention can still be ensured. Therefore, the invention can better ensure that the low-temperature ring 13 has the temperature lower than the thermal cracking temperature, and can still ensure that the low-temperature ring has the lower temperature when the outer diameter of the low-temperature ring is equal to or slightly larger than the diameter of the substrate, thereby thoroughly solving the problem of deposition on the back surface of the substrate after the high-temperature cracking of the fluorocarbon and simultaneously keeping the degree of freedom of the shape and size design of the low-temperature ring.
Secondly, the heat dissipation ring 15 can adopt various forms, wherein the heat dissipation ring with the L-shaped section is preferably adopted, and the heat dissipation ring is provided with 2 ring surfaces adjacent to the base 1, so that the arrangement and the positioning are more reliable and stable, the heat dissipation area is fully utilized, and the heat dissipation speed can be further effectively improved; that is, the larger the area of the 2 ring surfaces of the L-shaped heat dissipation ring 15 adjacent to the susceptor, the faster the diffusion speed of the heat conducted outward from the back surface of the substrate. In addition, a plurality of cooling channels can be optionally arranged in the heat dissipation ring 15, and the cooling speed of the heat on the back surface of the substrate can be further accelerated by the cooling gas introduced from the cooling channels.
Based on the above, in the plasma etching process of the substrate, the invention can rapidly conduct and diffuse the heat on the back of the substrate outwards, rapidly and effectively reduce the temperature of the low-temperature ring 13 on the back of the substrate, so that the time of the temperature at which the carbide on the back of the substrate is subjected to thermal cracking is as short as possible, even none; thereby effectively reducing the formation of polymer evaporated and deposited on the back surface of the substrate by thermal cracking of the carbide.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (23)
1. An apparatus for reducing polymer on the backside of a substrate, surrounding the outer peripheral side of a pedestal (1) of a substrate (2) disposed in a plasma etch chamber, the edge of the substrate (2) protruding beyond the edge of the upper surface (102) of the pedestal (1), the apparatus comprising:
a focus ring (12) disposed around an outer peripheral side of the susceptor (1); the focus ring (12) having an extension (123) extending at least partially below the edge of the back side of the substrate (2);
a low temperature ring (13) disposed below the back surface of the substrate (2) and between the outer peripheral side of the susceptor (1) and the extension (123) of the focus ring (12); and
a heat dissipating ring (15) located below the low temperature ring (13) and disposed around an outer peripheral side of the susceptor (1).
2. The apparatus for reducing substrate backside polymer of claim 1, wherein the upper surface of said cryo-ring (13) and the upper surface of said focus ring extension (123) are coplanar; a gap is arranged between the substrate (2) and the back surface.
3. The apparatus for reducing polymer on the backside of a substrate as recited in claim 1, wherein the plasma etching chamber further comprises an insulating ring (11) disposed around the heat dissipating ring (15); the focusing ring (12) is arranged on the insulating ring (11) and covers the top surface of the whole insulating ring (11).
4. The apparatus for reducing polymer on the backside of a substrate as claimed in claim 3, wherein the heat dissipation ring (15) further comprises a plurality of cooling channels for transferring a cooling object to the low temperature ring (13).
5. The device for reducing polymer on the backside of a substrate as claimed in claim 4, wherein the heat dissipation ring (15) is a vertical ring interposed between the base (1) and the insulating ring (11).
6. The device for reducing polymer on the backside of a substrate as claimed in claim 4, wherein the heat dissipation ring (15) has an L-shaped cross-section;
the vertical ring part of the L-shaped heat dissipation ring (15) is arranged between the base (1) and the insulating ring (11);
the transverse ring part of the L-shaped heat dissipation ring (15) is positioned below the insulating ring (11).
7. The apparatus for reducing polymer on the backside of a substrate as claimed in claim 1, further comprising a cover ring (14) disposed around the outer circumference of the focus ring (12) and covering the upper surface (111) at the outer diameter of the insulating ring (11).
8. The apparatus for reducing polymer on the backside of a substrate as claimed in claim 7, wherein the cover ring (14) is a radially outwardly extending portion formed on the focus ring (12), i.e., the cover ring (14) is integrally formed with the focus ring (12).
9. The apparatus for reducing polymer on the backside of a substrate as claimed in claim 3, wherein the apparatus for reducing polymer on the backside of a substrate further comprises a plurality of cooling channels disposed through the insulating ring (11) for transferring the cooling object to the cryogenic ring (13).
10. The apparatus for reducing polymer on the backside of a substrate as set forth in claim 1, wherein the focus ring (12) is made of silicon, silicon carbide, aluminum oxide, aluminum nitride, silicon nitride, or quartz.
11. The apparatus for reducing polymer on the backside of a substrate as recited in claim 1, wherein the cryogenic ring (13) is made of silicon, silicon carbide or graphite.
12. The apparatus for reducing polymer on the backside of a substrate as claimed in claim 1, wherein the heat dissipation ring (15) is made of a high thermal conductivity material of aluminum nitride or aluminum oxide.
13. A plasma etching chamber comprising a substrate (2), a susceptor (1) for placing the substrate (2), and means for reducing polymer on the backside of the substrate disposed around the outer periphery of the susceptor (1); wherein,
the edge of the substrate (2) protrudes out of the edge of the upper surface (102) of the base (1);
the device for reducing polymer on the back of the substrate comprises:
a focus ring (12) disposed around an outer peripheral side of the susceptor (1); the focus ring (12) having an extension (123) extending at least partially below the edge of the back side of the substrate (2);
a low temperature ring (13) disposed below the back surface of the substrate (2) and between the outer peripheral side of the susceptor (1) and the extension (123) of the focus ring (12); and
a heat dissipating ring (15) located below the low temperature ring (13) and disposed around an outer peripheral side of the susceptor (1).
14. The plasma etching chamber of claim 13, wherein the base (1) further comprises a substrate support on the upper surface (102) thereof for mounting the substrate (2), the substrate support comprising an electrostatic chuck (3).
15. The plasma etch chamber of claim 13, wherein an upper surface of said cryoring (13) and an upper surface of said focus ring extension (123) are coplanar; a gap is arranged between the substrate (2) and the back surface.
16. The plasma etching chamber of claim 13, further comprising an insulating ring (11) disposed around said heat dissipating ring (15); the focusing ring (12) is arranged on the insulating ring (11) and covers the top surface of the whole insulating ring (11).
17. The plasma etching chamber of claim 16, wherein the heat dissipating ring (15) further comprises cooling channels for transferring a cooling object to the low temperature ring (13).
18. The plasma etching chamber of claim 17, wherein the heat dissipating ring (15) is a vertical ring interposed between the susceptor (1) and the insulating ring (11).
19. The plasma etching chamber of claim 17, wherein the heat dissipating ring (15) is L-shaped in cross-section;
the vertical ring part of the L-shaped heat dissipation ring (15) is arranged between the base (1) and the insulating ring (11);
the transverse ring part of the L-shaped heat dissipation ring (15) is positioned below the insulating ring (11).
20. The plasma etching chamber of claim 13, wherein said means for reducing polymer on the backside of the substrate further comprises a cover ring (14) disposed around the outer periphery of the focus ring (12) and overlying the upper surface (111) at the outer diameter of said insulating ring (11).
21. The plasma etching chamber of claim 16, further comprising a plurality of cooling channels disposed through the insulating ring (11) and/or the susceptor (1) that deliver cooling objects to the cryogenic ring (13).
22. An apparatus for reducing polymer on the backside of a substrate, surrounding the outer peripheral side of a pedestal (1) of a substrate (2) disposed in a plasma etch chamber, the edge of the substrate (2) protruding beyond the edge of the upper surface (102) of the pedestal (1), the apparatus comprising:
a focus ring (12) disposed around an outer peripheral side of the susceptor (1);
a low temperature ring (13) disposed below the back surface of the substrate (2) and between the outer peripheral side of the susceptor (1) and the focus ring (12); and
and a heat dissipation ring (15) which is located below the low temperature ring (13) and is arranged around the outer periphery of the susceptor (1), wherein the heat dissipation ring is made of a high thermal conductive material.
23. The apparatus for reducing polymer on the backside of a substrate of claim 22, wherein less than 20% of the area of the upper surface of the cryogenic ring (13) is exposed to the plasma.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910056086A CN101989543B (en) | 2009-08-07 | 2009-08-07 | Device for reducing polymers at back side of substrate |
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| CN200910056086A CN101989543B (en) | 2009-08-07 | 2009-08-07 | Device for reducing polymers at back side of substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106024567A (en) * | 2015-03-31 | 2016-10-12 | 朗姆研究公司 | Plasma processing systems and structures having sloped confinement rings |
| CN109423606A (en) * | 2017-08-24 | 2019-03-05 | 中微半导体设备(上海)有限公司 | Focusing ring and its corrosion-resistant means of defence |
| CN112992631A (en) * | 2019-12-16 | 2021-06-18 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, mounting method thereof and plasma processing device |
| CN113725059A (en) * | 2020-05-26 | 2021-11-30 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, mounting method thereof and plasma processing device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| DE10143718A1 (en) * | 2001-08-31 | 2003-03-27 | Infineon Technologies Ag | Mounting device for wafer in plasma etching plant has sealant introduced into free space between wafer and electrode |
| US7850174B2 (en) * | 2003-01-07 | 2010-12-14 | Tokyo Electron Limited | Plasma processing apparatus and focus ring |
| US20040261946A1 (en) * | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
| KR20070081038A (en) * | 2006-02-09 | 2007-08-14 | 삼성전자주식회사 | Electrostatic chuck of plasma appartus |
| JP2007258500A (en) * | 2006-03-24 | 2007-10-04 | Hitachi High-Technologies Corp | Substrate supporting device |
| JP2008078208A (en) * | 2006-09-19 | 2008-04-03 | Tokyo Electron Ltd | Focus ring and plasma processing apparatus |
| JP2008103403A (en) * | 2006-10-17 | 2008-05-01 | Tokyo Electron Ltd | Substrate mount table and plasma treatment apparatus |
| JP4695606B2 (en) * | 2007-01-09 | 2011-06-08 | 東京エレクトロン株式会社 | Method for improving heat conduction of focus ring in substrate mounting apparatus |
| JP5102500B2 (en) * | 2007-01-22 | 2012-12-19 | 東京エレクトロン株式会社 | Substrate processing equipment |
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- 2009-08-07 CN CN200910056086A patent/CN101989543B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024567A (en) * | 2015-03-31 | 2016-10-12 | 朗姆研究公司 | Plasma processing systems and structures having sloped confinement rings |
| CN106024567B (en) * | 2015-03-31 | 2018-05-04 | 朗姆研究公司 | With the plasma process system and structure for tilting confinement ring |
| CN109423606A (en) * | 2017-08-24 | 2019-03-05 | 中微半导体设备(上海)有限公司 | Focusing ring and its corrosion-resistant means of defence |
| CN112992631A (en) * | 2019-12-16 | 2021-06-18 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, mounting method thereof and plasma processing device |
| CN112992631B (en) * | 2019-12-16 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, installation method thereof and plasma processing device |
| CN113725059A (en) * | 2020-05-26 | 2021-11-30 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, mounting method thereof and plasma processing device |
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| CN101989543B (en) | 2012-09-05 |
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