WO2021161126A1 - 表示装置および電子機器 - Google Patents

表示装置および電子機器 Download PDF

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Publication number
WO2021161126A1
WO2021161126A1 PCT/IB2021/050762 IB2021050762W WO2021161126A1 WO 2021161126 A1 WO2021161126 A1 WO 2021161126A1 IB 2021050762 W IB2021050762 W IB 2021050762W WO 2021161126 A1 WO2021161126 A1 WO 2021161126A1
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Prior art keywords
layer
insulator
transistor
oxide
light emitting
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Ceased
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PCT/IB2021/050762
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English (en)
French (fr)
Japanese (ja)
Inventor
山崎舜平
楠紘慈
楠本直人
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to US17/760,204 priority Critical patent/US20230060303A1/en
Priority to JP2021577709A priority patent/JP7637078B2/ja
Priority to KR1020227027815A priority patent/KR20220138858A/ko
Priority to CN202180014228.4A priority patent/CN115088029A/zh
Publication of WO2021161126A1 publication Critical patent/WO2021161126A1/ja
Anticipated expiration legal-status Critical
Priority to JP2025022227A priority patent/JP2025075042A/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
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    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
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    • H10H20/80—Constructional details
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    • H10H20/855—Optical field-shaping means, e.g. lenses
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • H10H20/80—Constructional details
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    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
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    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
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    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
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    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
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    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7424—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self-supporting substrates
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
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    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7426—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
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    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/743—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
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    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
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    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates

Definitions

  • One aspect of the present invention relates to a display device.
  • One aspect of the present invention is not limited to the above technical fields.
  • the technical fields of one aspect of the present invention include semiconductor devices, display devices, light emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices (for example, touch sensors), input / output devices (for example, touch panels, etc.). ), Their driving method, or their manufacturing method can be given as an example.
  • a display device using a highly reliable light emitting diode (LED (Light Emitting Diode)) as a display device (also referred to as a display element) has been proposed (for example, Patent Document 1 and Patent Document 2).
  • LED Light Emitting Diode
  • display devices using micro LEDs have advantages such as high brightness, high contrast, and long life, and research and development are active as next-generation display devices.
  • a compound semiconductor having a band gap suitable for each emission color is required.
  • the band gap can be changed by adjusting the atomic number ratio of the elements or introducing impurities. If the LED that emits R, the LED that emits G, and the LED that emits B can be individually formed on the same substrate, the manufacturing process of the display device can be simplified.
  • the pick-and-place process of the LED chip requires a lot of time, and has a problem that the manufacturing cost does not decrease.
  • one aspect of the present invention is to provide an inexpensive and highly reliable display device.
  • one of the purposes is to provide a small display device.
  • one of the purposes is to provide a display device having high display quality.
  • one of the purposes is to provide a display device having low power consumption.
  • one of the purposes is to reduce the manufacturing cost of a display device using a micro LED.
  • one of the purposes is to provide a new display device.
  • one of the purposes is to provide a method for manufacturing the above display device.
  • One aspect of the present invention includes a transistor, a reflective layer, a light emitting diode, a first insulating layer, and a second insulating layer, and the transistor, the reflective layer, and the light emitting diode each overlap each other. It has a region, a reflective layer is provided on the transistor via a first insulating layer, a light emitting diode is provided on the reflective layer via a second insulating layer, and the light emitting diode has a semiconductor layer.
  • the semiconductor layer is a display device having a region in contact with the second insulating layer.
  • the color conversion layer preferably has a phosphor or quantum dots.
  • the transistor has a metal oxide in the channel forming region, and the metal oxides are In, Zn, and M (M is Al, Ti, Ga, Ge, Sn, Y, Zr, La, Ce, Nd or Hf. It is preferable to have one or more of).
  • Another aspect of the present invention includes a first layer, a second layer, a third layer, and a fourth layer, and the second layer and the third layer are first layers.
  • the second layer is provided between the first layer and the third layer, and the first layer has a first transistor.
  • the second layer has a second transistor, the third layer has a reflective layer, the fourth layer has a light emitting diode, and the first transistor, the second transistor, and the reflective layer.
  • each of the light emitting diodes has regions that overlap each other, a first insulating layer is provided between the first transistor and the second transistor, and a first insulating layer is provided between the second transistor and the reflective layer.
  • a third insulating layer is provided between the reflective layer and the light emitting diode, the light emitting diode has a semiconductor layer, and the semiconductor layer is a third insulating layer. It is a display device having a contact area.
  • the fifth layer is provided so as to sandwich the fourth layer with the third layer, and the fifth layer is one or both of the color conversion layer and the coloring layer.
  • the fifth layer is one or both of the color conversion layer and the coloring layer.
  • each of the first transistor, the second transistor, the reflection layer, and the light emitting diode has a region overlapping with each other, and the light emitting diode, the color conversion layer, and the coloring
  • a fourth insulating layer may be provided between one or both of the layers.
  • the color conversion layer preferably has a phosphor or quantum dots.
  • the first transistor preferably has silicon in the channel forming region.
  • the second transistor has a metal oxide in the channel forming region, and the metal oxides are In, Zn, and M (M is Al, Ti, Ga, Ge, Sn, Y, Zr, La, It is preferable to have one or more of Ce, Nd or Hf).
  • the first transistor can be a component of a circuit that drives a pixel circuit
  • the second transistor can be a component of a pixel circuit
  • the semiconductor layer is preferably a compound semiconductor containing a Group 13 element and a Group 15 element.
  • the light emitting diode preferably emits blue, bluish-purple, purple or ultraviolet light.
  • an inexpensive and highly reliable display device can be provided.
  • a small display device can be provided.
  • a display device having low power consumption can be provided.
  • the manufacturing cost of the display device using the micro LED can be reduced.
  • a new display device can be provided.
  • a method for manufacturing the above display device can be provided.
  • FIG. 1 is a diagram illustrating a display device.
  • 2A and 2B are diagrams for explaining the display device.
  • 3A to 3D are views for explaining a method of manufacturing a light emitting diode.
  • 4A to 4D are views for explaining a method of manufacturing a light emitting diode.
  • 5A to 5D are views for explaining a method of manufacturing a light emitting diode.
  • 6A and 6B are diagrams for explaining the display device.
  • 6C to 6E are diagrams illustrating transistors.
  • 7A and 7B are diagrams for explaining the display device.
  • 8A and 8B are diagrams for explaining the display device.
  • FIG. 9 is a diagram illustrating a display device.
  • FIG. 10 is a diagram illustrating a display device.
  • FIG. 10 is a diagram illustrating a display device.
  • FIG. 11 is a diagram illustrating a display device.
  • FIG. 12A is a top view illustrating an example of a transistor.
  • 12B to 12D are cross-sectional views illustrating an example of a transistor.
  • FIG. 13 is a circuit diagram illustrating an example of a pixel circuit.
  • 14A and 14B are diagrams illustrating an example of an electronic device.
  • 15A and 15B are diagrams for explaining an example of an electronic device.
  • 16A and 16B are diagrams for explaining an example of an electronic device.
  • 17A and 17B are diagrams for explaining an example of an electronic device.
  • 18A to 18D are diagrams for explaining an example of an electronic device.
  • 19A to 19F are diagrams for explaining an example of an electronic device.
  • membrane and the word “layer” can be interchanged with each other in some cases or depending on the situation.
  • conductive layer can be changed to the term “conductive layer”.
  • insulating film can be changed to the term “insulating layer”.
  • the display device of the present embodiment has a light emitting diode included in the pixel circuit, a transistor included in the pixel circuit, and a transistor included in the drive circuit of the pixel circuit, and each of them has a laminated structure so as to have an overlapping region. .. With this configuration, the display device can be miniaturized.
  • a plurality of light emitting diodes can be attached to a circuit board on which a transistor or the like is formed in one step. Therefore, even when manufacturing a display device having a large number of pixels or a high-definition display device, the manufacturing time of the display device can be shortened as compared with the method of mounting the light emitting diodes one by one on the circuit board. .. In addition, the difficulty of manufacturing the display device can be reduced.
  • FIG. 1 shows a cross-sectional view of a display device 100A, which is one aspect of the present invention.
  • the display device 100A includes a layer 11 provided with a transistor or the like of a pixel circuit drive circuit or the like, a layer 12 provided with a transistor or the like of the pixel circuit, a layer 13 provided with a reflection layer, and a pixel circuit. It has a structure in which a layer 14 provided with a light emitting device (also referred to as a light emitting element) such as a light emitting diode is laminated in this order.
  • a light emitting device also referred to as a light emitting element
  • the display device is divided into a plurality of layers for convenience, but the boundary between the layers is not strictly defined.
  • the element may be in a layer other than the layer 11 as long as the function of the element is not impaired.
  • another insulating layer and another conductive layer may be provided as required. Further, a part of the insulating layer and the conductive layer of each layer may be omitted if necessary.
  • the layer 11 has a transistor 130 that is a component of, for example, a drive circuit of a pixel circuit (one or both of a gate driver and a source driver). Since the transistor 130 is required to operate at high speed, it is preferable to use a transistor (hereinafter, Si transistor) having silicon (single crystal silicon, polycrystalline silicon, amorphous silicon, or the like) in the channel forming region.
  • Si transistor a transistor having silicon (single crystal silicon, polycrystalline silicon, amorphous silicon, or the like) in the channel forming region.
  • FIG. 1 shows an example in which single crystal silicon is used for the substrate 151, and the transistor 130 has a channel forming region on the substrate 151.
  • a part of the drive circuit of the pixel circuit may be provided in an external IC chip connected to the pixel circuit.
  • the transistor 130 has a conductive layer 135, an insulating layer 134, an insulating layer 136, and a pair of low resistance regions 133.
  • the conductive layer 135 functions as a gate.
  • the insulating layer 134 is located between the conductive layer 135 and the substrate 151, and functions as a gate insulating layer.
  • the insulating layer 136 is provided so as to cover the side surface of the conductive layer 135 and functions as a sidewall.
  • the pair of low resistance regions 133 are impurities-doped regions in the substrate 151, one of which functions as a source of the transistor 130 and the other of which functions as a drain of the transistor 130. Further, an element separation layer 132 is provided around the transistor 130.
  • An insulating layer 139 is provided so as to cover the transistor 130, and a conductive layer 138 is provided on the insulating layer 139. Further, a conductive layer 137 is embedded in the opening provided in the insulating layer 139. The conductive layer 138 is electrically connected to one of the pair of low resistance regions 133 via the conductive layer 137. Further, an insulating layer 141 is provided so as to cover the conductive layer 138. The conductive layer 138 functions as wiring. The wiring can be electrically connected to another transistor, a pixel circuit, another circuit, or the like of a circuit having a transistor 130 as an element.
  • the layer 12 includes a transistor 120, an insulating layer 142, an insulating layer 162, an insulating layer 181, an insulating layer 182, an insulating layer 183, a conductive layer 184a, a conductive layer 184b, an insulating layer 185, and an insulating layer 186, which are components of a pixel circuit. It has a conductive layer 194 and a conductive layer 195. One or more of these elements may be regarded as the components of the transistor, but in the present embodiment, they will be described without being included in the components of the transistor.
  • the conductive layer and the insulating layer of the layer 12 may have a single-layer structure or a laminated structure.
  • the insulating layer 142 is provided on the layer 11.
  • the insulating layer 142 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the layer 11 into the transistor 120 and desorption of oxygen from the metal oxide layer 165 to the insulating layer 142 side.
  • a film such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film, which is less likely to diffuse hydrogen and oxygen than a silicon oxide film, can be used.
  • the transistor 120 has a conductive layer 161, an insulating layer 163, an insulating layer 164, a metal oxide layer 165, a pair of conductive layers 166, an insulating layer 167, a conductive layer 168, and the like.
  • a specific example of a transistor that can be used in the display device of one aspect of the present invention will be described in detail in the third embodiment.
  • the transistor 120 is preferably a transistor having a metal oxide layer 165 in the channel forming region (hereinafter referred to as an OS transistor).
  • the metal oxide layer 165 has a first region that overlaps with one of the pair of conductive layers 166, a second region that overlaps with the other of the pair of conductive layers 166, and between the first region and the second region. It has a third region of.
  • the OS transistor does not require a bonding step or the like, and can be formed in a region overlapping the Si transistor via an insulating layer or the like. Therefore, the laminated device can be manufactured by a simple process, and the manufacturing cost can be reduced.
  • the OS transistor has features such as high mobility, high-speed operation, and high reliability as compared with a transistor using amorphous silicon.
  • the metal oxide used for the OS transistor can be formed in the film forming step, and the laser apparatus required in the crystallizing step of polycrystalline silicon can be eliminated. Therefore, by using the OS transistor, it is possible to manufacture an inexpensive and highly reliable display device.
  • a conductive layer 161 and an insulating layer 162 are provided on the insulating layer 142, and an insulating layer 163 is provided so as to cover the conductive layer 161 and the insulating layer 162.
  • An insulating layer 164 is provided on the insulating layer 163, and a metal oxide layer 165 is provided on the insulating layer 164.
  • the conductive layer 161 functions as a gate electrode, and the insulating layer 163 and the insulating layer 164 function as a gate insulating layer.
  • the conductive layer 161 has a region that overlaps with the metal oxide layer 165 via the insulating layer 163 and the insulating layer 164.
  • the insulating layer 163 is preferably formed of a material that functions as a barrier layer, like the insulating layer 142. It is preferable to use an oxide insulating film such as a silicon oxide film for the insulating layer 164 in contact with the metal oxide layer 165.
  • the pair of conductive layers 166 are provided on the metal oxide layer 165 at intervals.
  • One of the pair of conductive layers 166 functions as a source for the transistor and the other functions as a drain.
  • An insulating layer 181 is provided so as to cover the metal oxide layer 165 and the pair of conductive layers 166, and an insulating layer 182 is provided on the insulating layer 181.
  • the insulating layer 181 and the insulating layer 182 are provided with an opening reaching the metal oxide layer 165, and the insulating layer 167 and the conductive layer 168 are embedded inside the opening.
  • the opening is provided at a position overlapping the third region of the metal oxide layer 165.
  • the insulating layer 167 has a region that overlaps the side surface of the insulating layer 181 and the side surface of the insulating layer 182.
  • the conductive layer 168 has a region that overlaps the side surface of the insulating layer 181 and the side surface of the insulating layer 182 via the insulating layer 167.
  • the conductive layer 168 functions as a gate electrode, and the insulating layer 167 functions as a gate insulating layer.
  • the conductive layer 168 has a region that overlaps with the metal oxide layer 165 via the insulating layer 167.
  • the insulating layer 183 and the insulating layer 185 are provided so as to cover the upper surfaces of the insulating layer 182, the insulating layer 167, and the conductive layer 168.
  • the insulating layer 181 and the insulating layer 183 are preferably formed of a material that functions as a barrier layer, like the insulating layer 142. By covering the pair of conductive layers 166 with the insulating layer 181, it is possible to prevent the pair of conductive layers 166 from being oxidized by oxygen contained in the insulating layer 182.
  • One of the pair of conductive layers 166 and a plug electrically connected to the conductive layer 195 are embedded in openings provided in the insulating layer 181, the insulating layer 182, the insulating layer 183, and the insulating layer 185.
  • the plug may have a conductive layer 184b in contact with the side surface of the opening and one upper surface of the pair of conductive layers 166, and a conductive layer 184a embedded inside the conductive layer 184b.
  • the conductive layer 184b is preferably formed of a conductive material in which hydrogen and oxygen are difficult to diffuse.
  • a conductive layer 195, a conductive layer 194, and an insulating layer 186 are provided on the insulating layer 185.
  • the conductive layer 195 functions as a wiring for electrically connecting the transistor 120 and the light emitting diode 110 provided in the layer 14.
  • the conductive layer 194 functions as a plug that electrically connects the transistor 120 and the light emitting diode 110.
  • Materials that can be used for the conductive layer 194 and the conductive layer 195 include, for example, aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, tin, zinc, silver, platinum, gold, molybdenum, tantalum, tungsten and the like. Examples thereof include metals and alloys containing this as a main component (such as an alloy of silver, palladium and copper (Ag-Pd-Cu (APC))). Further, an oxide such as tin oxide or zinc oxide may be used. Further, the conductive layer 194 and the conductive layer 195 may be a laminate of any two or more of the above materials.
  • the insulating layer 186 can have a flattening function.
  • the insulating layer 186 is preferably formed by using a single layer or a laminate having one or more inorganic insulating materials such as silicon oxide, silicon nitride nitride, silicon nitride, silicon nitride, aluminum oxide, hafnium oxide, and titanium nitride.
  • the layer 13 is provided with a conductive layer 189, a conductive layer 192, a reflective layer 193, and an insulating layer 187 covering them.
  • the conductive layer 189 and the conductive layer 192 function as wirings that electrically connect to the light emitting diode 110.
  • the reflection layer 193 is provided at a position overlapping the light emitting diode 110 provided in the layer 14, and has a function of reflecting the light emitted from the light emitting diode 110 toward the layer 12. By providing the reflective layer 193, the direction of the light emitted by the light emitting diode 110 can be adjusted to the outside of the layer 14 (the side opposite to the surface of the layer 14 in contact with the layer 13).
  • the reflective layer 193 preferably has a region that also overlaps with the transistor 120 of the layer 12.
  • the reflective layer 193 can block the light emitted from the light emitting diode 110 in the layer 12 direction, and can suppress the characteristic fluctuation when the transistor 120 is irradiated with the light.
  • the reflective layer 193 preferably has a region that also overlaps with the transistor 130 included in the layer 11.
  • the transistor having a region overlapping with the reflection layer 193 may be a part of the transistors of the layer 12 and the layer 11. Shading is not necessary as long as the characteristics of the transistor fluctuate due to light irradiation are acceptable. Further, the wiring or electrodes provided on the layer 12, the layer 13, and the like may have a function as a light-shielding layer.
  • the reflective layer 193 is preferably formed of a material having a high reflectance of light emitted by the light emitting diode 110 included in the layer 14.
  • metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, tin, zinc, silver, platinum, gold, molybdenum, tantalum, or tungsten, or alloys containing these as the main components (silver, palladium, and copper). (Ag-Pd-Cu (APC), etc.) and the like.
  • the reflective layer 193 may be a laminate of any two or more of the above materials.
  • An insulating layer 187 is provided on the conductive layer 189, the conductive layer 192, and the reflective layer 193.
  • An insulating layer 188 is provided on the insulating layer 187. Further, the insulating layer 102 is provided on the insulating layer 188.
  • One of the pair of conductive layers 166 of the transistor 120 is electrically connected to the conductive layer 189 via the conductive layer 184a and the conductive layer 184b.
  • the insulating layer 186 and the insulating layer 187 can have a flattening function.
  • the insulating layer 186 and the insulating layer 187 are formed by using a single layer or a laminate having one or more inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride oxide, silicon nitride, aluminum oxide, hafnium oxide, and titanium nitride. Is preferable.
  • silicon oxide nitride refers to a material having silicon, oxygen and nitrogen, and having a higher oxygen content than nitrogen. Further, silicon nitride refers to a material having silicon, oxygen, and nitrogen and having a higher nitrogen content than oxygen.
  • the insulating layer 188 can function as a barrier layer that prevents impurities (hydrogen, water, etc.) from diffusing from the layer 14 to the transistor 120.
  • impurities hydrogen, water, etc.
  • a film such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film, which is less likely to diffuse hydrogen and oxygen than a silicon oxide film, can be used.
  • the insulating layer 102 is preferably formed by using a single layer or a laminate having one or more inorganic insulating materials such as silicon oxide, silicon nitride nitride, silicon nitride, silicon nitride, aluminum oxide, hafnium oxide, and titanium nitride.
  • the transistor 120 can be used as a transistor constituting a pixel circuit.
  • the transistor 130 can be used as a transistor constituting a drive circuit (one or both of a gate driver and a source driver) for driving the pixel circuit.
  • the transistor 130 may be a transistor that constitutes a pixel circuit.
  • the transistors 120 and 130 can also be used as transistors constituting various circuits such as an arithmetic circuit or a storage circuit.
  • an element such as a transistor having a pixel circuit but also an element such as a transistor having a drive circuit can be formed directly under the light emitting diode, so that a drive circuit is provided outside the display unit.
  • the display device can be miniaturized as compared with the case. Further, it is possible to realize a display device having a narrow frame (narrow non-display area).
  • the layer 14 has a light emitting diode 110, an insulating layer 103, and an insulating layer 104.
  • the insulating layer 102, the insulating layer 103, and the insulating layer 104 may have a single-layer structure or a laminated structure, respectively.
  • the light emitting diode 110 has a semiconductor layer 113, a light emitting layer 114, and a semiconductor layer 115, and is provided on the layer 13 in this order.
  • the light emitting diode 110 may further have a plurality of layers.
  • the insulating layer 103 is provided so as to cover the insulating layer 102, the semiconductor layer 113, the light emitting layer 114, and the semiconductor layer 115.
  • the insulating layer 103 preferably has a flattening function.
  • An insulating layer 104 is provided on the insulating layer 103.
  • a conductive layer 190a and a conductive layer 191a are provided in the openings provided in the insulating layer 103.
  • the conductive layer 190c and the conductive layer 191c are provided in the openings provided in the insulating layer 103, the insulating layer 102, the insulating layer 188, and the insulating layer 187.
  • the conductive layer 190a, the conductive layer 190c, the conductive layer 191a, and the conductive layer 191c function as plugs for electrically connecting each element.
  • the semiconductor layer 113 is electrically connected to the conductive layer 189 via the conductive layer 190a, the conductive layer 190b, and the conductive layer 190c. Further, the semiconductor layer 115 is electrically connected to the conductive layer 192 via the conductive layer 191a, the conductive layer 191b, and the conductive layer 191c.
  • the conductive layer 190b and the conductive layer 191b function as connection wiring.
  • the insulating layer 103, the insulating layer 104, the insulating layer 139, the insulating layer 141, the insulating layer 162, the insulating layer 182, and the insulating layer 185 are made of silicon oxide, silicon oxide, silicon nitride, silicon nitride, aluminum oxide, hafnium oxide, and the like. It is preferably formed using a single layer or a laminate having one or more inorganic insulating materials such as titanium nitride.
  • Materials that can be used for the conductive layer 190a to 190c and the conductive layer 191a to 191c include, for example, aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, tin, zinc, silver, platinum, gold, and the like. Examples thereof include metals such as molybdenum, tantalum, and tungsten, or alloys containing the same as a main component (such as an alloy of silver, palladium, and copper (Ag-Pd-Cu (APC))). Further, an oxide such as tin oxide or zinc oxide may be used. Further, the conductive layer 190a to the conductive layer 190c and the conductive layer 191a to the conductive layer 191c may be a laminate of any two or more of the above materials.
  • the light emitting layer 114 is sandwiched between the semiconductor layer 113 and the semiconductor layer 115. In the light emitting layer 114, electrons and holes are combined to emit light.
  • An n-type semiconductor layer can be used for one of the semiconductor layer 113 and the semiconductor layer 115, and a p-type semiconductor layer can be used for the other. Further, as the light emitting layer 114, an n-type, i-type, or p-type semiconductor layer can be used as the light emitting layer 114.
  • the laminated structure including the semiconductor layer 113, the light emitting layer 114, and the semiconductor layer 115 is formed so as to emit light such as red, green, blue, bluish purple, purple, or ultraviolet light.
  • a compound containing a Group 13 element and a Group 15 element also referred to as a Group 3-5 compound
  • Examples of Group 13 elements include aluminum, gallium, and indium.
  • Examples of Group 15 elements include nitrogen, phosphorus, arsenic, and antimony.
  • gallium / phosphorus compound gallium / arsenide compound, gallium / aluminum / arsenide compound, aluminum / gallium / indium / phosphorus compound, gallium nitride, indium / gallium nitride compound, selenium / zinc compound, etc.
  • a light emitting diode that emits the desired light can be produced.
  • a compound other than the above-mentioned compound may be used.
  • the pn junction or pin junction may be a heterojunction or a double heterojunction as well as a homojunction.
  • an LED having a quantum well junction, an LED using a nanocolumn, or the like may be used.
  • a material such as gallium nitride can be used for the light emitting diode that emits light in the blue wavelength band from ultraviolet rays.
  • a material such as an indium / gallium nitride compound can be used for the light emitting diode that emits light in the wavelength band from ultraviolet to green.
  • Materials such as aluminum, gallium, indium phosphide, and phosphorus compounds or gallium arsenide compounds can be used for the light emitting diodes that emit light in the wavelength band from green to red.
  • a material such as a gallium arsenide compound can be used for the light emitting diode that emits light in the infrared wavelength band.
  • the plurality of light emitting diodes 110 provided on the same surface have a configuration capable of emitting light of different colors such as R (red), G (green), and B (blue), a color conversion layer is used. It is possible to display a color image without it. Therefore, the step of forming the color conversion layer becomes unnecessary, and the manufacturing cost of the display device can be suppressed.
  • all the light emitting diodes 110 provided on the same surface may be configured to emit light of the same color.
  • the light emitted from the light emitting layer 114 is taken out of the display device via one or both of the color conversion layer and the coloring layer. The configuration will be described in detail in the second embodiment of the display device.
  • the display device of the present embodiment may have a light emitting diode that emits infrared light.
  • a light emitting diode that emits infrared light can be used, for example, as a light source for an infrared light sensor.
  • FIG. 1 shows a form in which the reflective layer 193 can be formed of the same material and the same process as the conductive layer 189 and the conductive layer 192, but is different from the layer provided with the conductive layer 189 and the conductive layer 192. It may be provided in a layer.
  • the reflective layer 193 may be provided on the insulating layer 188 and covered with the insulating layer 102.
  • the reflection layer 193 may be provided between the insulating layer 102 and the light emitting diode 110.
  • the reflective layer 193 may be configured to be in contact with the semiconductor layer 113 and may act as one electrode layer of the light emitting diode 110.
  • the light emitting diode 110 is processed into a structure as shown in FIG. 1 after a laminated structure of a separately formed compound semiconductor or the like is fixed to the insulating layer 102.
  • a method of forming the light emitting diode 110 will be described with reference to FIGS. 3A to 3D, FIGS. 4A to 4D, and FIGS. 5A to 5D.
  • a release layer 310, a semiconductor layer 113a, a light emitting layer 114a, and a semiconductor layer 115a are provided on the substrate 300 (see FIG. 3A).
  • the substrate 300 a single crystal substrate such as a sapphire (Al 2 O 3 ) substrate, a silicon carbide (SiC) substrate, a silicon (Si) substrate, or a compound semiconductor can be used.
  • a compound semiconductor a compound containing the above-mentioned Group 13 element and Group 15 element can be used.
  • the substrate 300 is preferably made of a material having the same or slightly different lattice constant as the light emitting layer 114a or the like.
  • gallium arsenide aluminum (AlGaAs) or the like can be used for the light emitting layer 114a or the like.
  • GaAs gallium arsenide
  • a release layer 310 is provided on the substrate 300.
  • the release layer 310 is provided to lift off the laminate having the semiconductor layer 113a, the light emitting layer 114a, the semiconductor layer 115a, and the like from the substrate 300.
  • the release layer 310 is preferably formed of a material that can be easily removed later by wet etching or the like. For example, aluminum arsenide (AlAs) or the like can be used.
  • a semiconductor layer 113a, a light emitting layer 114a, and a semiconductor layer 115a are provided on the release layer 310.
  • the semiconductor layer 113a and the semiconductor layer 115a function as a clad layer, and for example, one can have p-type conductivity and the other can have n-type conductivity. Although the case where the basic configuration of the light emitting diode is three layers will be described here, it may have more layers. Alternatively, a pn junction may be formed by adding an impurity to a part of the light emitting layer 114a.
  • the semiconductor layer 113a, the light emitting layer 114a, and the semiconductor layer 115a can be formed by epitaxially growing using, for example, a MOCVD method (metalorganic chemical vapor deposition method) or the like.
  • the adhesive layer 320 and the substrate 330 are provided on the semiconductor layer 115a (see FIG. 3B).
  • the substrate 330 can function as a support substrate when lifting off a laminate having a semiconductor layer 113a, a light emitting layer 114a, a semiconductor layer 115a, and the like.
  • the adhesive layer 320 has a function of adhering the laminate to the substrate 330.
  • the laminate Before the adhesive layer 320 and the substrate 330 are provided on the semiconductor layer 115a, the laminate may be processed into an island shape or a stripe shape.
  • a substrate having a flat surface As the substrate 330, a semiconductor substrate such as silicon, a glass substrate, a ceramics substrate, a metal substrate, a resin substrate, or the like can be used.
  • a material that can be peeled off again after being adhered can be used.
  • a pressure-sensitive adhesive, an ultraviolet curable resin, a thermosetting resin, a material soluble in water, an organic solvent, or the like can be used.
  • the release layer 310 is etched (see FIG. 3C) by wet etching using an acid or the like to separate the substrate 300 (see FIG. 3D).
  • FIGS. 4A, FIG. See 4B show the elements of the layer 13, and show how the surface of the semiconductor layer 113a exposed in FIG. 3D is fixed to the surface of the insulating layer 102.
  • the adhesive layer 320 and the substrate 330 are removed from the laminate of FIG. 4B (see FIG. 4C).
  • the adhesive layer 320 can weaken the adhesive force with the semiconductor layer 115a by curing or deteriorating. Alternatively, the adhesive layer 320 may be dissolved to remove the substrate 330.
  • the semiconductor layer 113a, the light emitting layer 114a, and the semiconductor layer 115a are processed into an island shape to form the semiconductor layer 113, the light emitting layer 114b, and the semiconductor layer 115b (see FIG. 4D).
  • the light emitting layer 114a and the semiconductor layer 115a are processed to expose a part of the surface of the semiconductor layer 113 (see FIG. 5A). .. At this time, the semiconductor layer 113, the light emitting layer 114, and the semiconductor layer 115 are laminated.
  • the insulating layer 103 that covers the laminate of the semiconductor layer 113, the light emitting layer 114, and the semiconductor layer 115 is formed (see FIG. 5B).
  • the insulating layer 103 is formed with an opening reaching the semiconductor layer 113 and an opening reaching the semiconductor layer 115. Further, the insulating layer 103, the insulating layer 102, the insulating layer 187, and the insulating layer 186 are formed with an opening reaching the conductive layer 189 and an opening reaching the conductive layer 192.
  • a conductive layer (conductive layer 190a, conductive layer 190c, conductive layer 191a, conductive layer 191c) is embedded in each of the openings.
  • the conductive layer 190a and the conductive layer 191a can act as a pair of electrodes of the light emitting diode 110.
  • a conductive layer serving as a pair of electrodes of the light emitting diode 110 is provided in contact with each of the semiconductor layer 113 and the semiconductor layer 115, and one of the conductive layers and the conductive layer 190a are electrically connected to the other of the conductive layers.
  • the conductive layer 191a may be electrically connected.
  • the conductive layer 190b and the conductive layer 191b are formed on the insulating layer 103.
  • the conductive layer 190b electrically connects the conductive layer 190a and the conductive layer 190c
  • the conductive layer 191b electrically connects the conductive layer 191a and the conductive layer 191c (see FIG. 5C).
  • the adhesive layer 500 may be provided between the insulating layer 102 and the semiconductor layer 113. (See FIG. 5D).
  • an insulating resin for the adhesive layer 500, an insulating resin, a conductive resin (including a resin containing a conductive filler) or the like can be used.
  • a conductive resin is used for the adhesive layer 500, the adhesive layer 500 can also act as one electrode layer of the light emitting diode 110.
  • a light emitting diode in which one of the pair of electrodes is electrically connected to the conductive layer 189 and the other of the pair of electrodes is electrically connected to the conductive layer 192.
  • one light emitting diode is shown in the figure used for the description of the above step, a plurality of light emitting diodes can be formed at the same time in the above step. Further, the above step is an example, and the light emitting diode may be formed by another step.
  • the display device 100A shown in FIGS. 1, 2A, and 2B has a laminated configuration of layers 11, layers 12, layers 13, and 14. However, the laminated configuration shown in FIGS. 6A and 6B may be used.
  • FIG. 6A is an example of the display device 100B having a laminated structure of the layer 15, the layer 12, the layer 13, and the layer 14, and is different from the display device 100A in that the layer 15 is provided instead of the layer 11.
  • the same reference numerals are used for the common elements of the layers 14 and 11.
  • the layer 15 has a substrate 152.
  • the substrate 152 has a function as a support substrate.
  • a semiconductor substrate such as silicon, a glass substrate, a ceramics substrate, a metal substrate, a resin substrate, or the like can be used.
  • the drive circuit of the pixel circuit and the like can be formed by the OS transistor provided in the layer 12.
  • the transistor 120e included in the drive circuit of the pixel circuit can be provided in the region 402 provided outside the pixel unit 401.
  • the structure of the transistor 120 included in the layer 12 is an example, and may be the self-aligned transistor 120c shown in FIG. 6C.
  • the layer 12 may have a transistor having a structure such as a staggered type, an inverted staggered type, a coprena type, or an inverted coprena type.
  • the structure of these transistors can also be applied to other display devices shown in this embodiment.
  • the reflective layer 193 is provided on the semiconductor layer 115 to allow light to the outside through the substrate 152. Can be ejected.
  • the reflective layer 193 may be omitted to emit light on both sides.
  • FIG. 6B is an example of the display device 100C having a laminated structure of the layer 16, the layer 12, the layer 13, and the layer 14, the point where the layer 16 is provided instead of the layer 11, and the OS transistor on the layer 12. Is not provided, which is different from the display device 100A.
  • the same reference numerals are used for the common elements of the layers 16 and 11.
  • the layer 16 is provided with a pixel circuit (excluding the display device) formed of Si transistors. Therefore, a semiconductor substrate such as silicon can be used for the layer 16.
  • FIG. 6B shows an example in which the transistor 130d is provided on the silicon substrate 153.
  • the layer 16 has a structure in which a silicon layer is provided on the substrate 154 via an insulating layer 143, and the silicon layer has a self-aligned transistor 130f having a channel forming region. May be good.
  • the silicon layer single crystal silicon, polycrystalline silicon, microcrystalline silicon, amorphous silicon and the like can be used.
  • the layer 16 may have 130 g of the inverted stagger type transistor shown in FIG. 6E.
  • the layer 16 may have a transistor having a structure such as a staggered type, a coprena type, or an inverted coprena type. The structure of these transistors can also be applied to the layer 11 of the other display devices shown in the present embodiment.
  • the substrate 154 a silicon substrate, a glass substrate, a ceramics substrate, a metal substrate, a resin substrate, or the like can be used.
  • the insulating layer 143 is preferably formed by using a single layer or a laminate having one or more inorganic insulating materials such as silicon oxide, silicon nitride nitride, silicon nitride, silicon nitride, aluminum oxide, hafnium oxide, and titanium nitride.
  • the drive circuit of the pixel circuit and the like can be provided on the layer 16.
  • the transistor 130e included in the drive circuit of the pixel circuit can be provided in the region 402 provided outside the pixel unit 401.
  • a part or all of the drive circuit of the pixel circuit may be provided in an external IC chip connected to the pixel circuit.
  • FIG. 9 shows a cross-sectional view of a display device 100D (also referred to as a touch panel) in which a display device and a touch sensor are combined.
  • a display device 100D also referred to as a touch panel
  • the configuration of the display device 100A is illustrated in FIG. 9, the display device 100B or the display device 100C can be combined with the touch sensor.
  • the detection device (also referred to as a sensor device, a detection element, or a sensor element) included in the touch panel of one aspect of the present invention is not limited.
  • Various sensors capable of detecting the proximity or contact of the object to be detected such as a finger or a stylus can be applied as a detection device.
  • various methods such as a capacitance method, a resistance film method, a surface acoustic wave method, an infrared method, an optical method, and a pressure sensitive method can be used.
  • a touch panel having a capacitance type detection device will be described as an example.
  • the capacitance method there are a surface type capacitance method, a projection type capacitance method and the like. Further, as the projection type capacitance method, there are a self-capacitance method, a mutual capacitance method and the like. It is preferable to use the mutual capacitance method because simultaneous multipoint detection is possible.
  • the touch panel of one aspect of the present invention has a configuration in which a separately manufactured display device and a detection device are bonded together, a configuration in which electrodes and the like constituting the detection device are provided on one or both of a substrate supporting the display device and a facing substrate, and the like. , Various configurations can be applied.
  • a conductive layer 194 is formed on the insulating layer 185.
  • the conductive layer 194 has a function as an electrode for supplying a power source or a drive signal to the display device 100A, or as a wiring.
  • the conductive layer 194 can be formed of the same material and the same process as the conductive layer 189, the conductive layer 192, the reflective layer 193, and the like.
  • the conductive layer 194 is electrically connected to the FPC (Flexible Printed Circuits) 501 via the conductive layer 195, the conductive layer 196, and the conductor 197.
  • a power supply and a drive signal can be supplied to the display device 100D via the FPC 501.
  • an anisotropic conductive film (ACF: Anisotropic Conductive Film) or an anisotropic conductive paste (ACP: Anisotropic Conductive Paste) can be used.
  • ACF Anisotropic Conductive Film
  • ACP Anisotropic Conductive Paste
  • the touch sensor is provided on the first surface of the substrate 171.
  • An adhesive layer 179 is provided so as to cover the elements of the touch sensor, and the adhesive layer 179 and the insulating layer 104 are bonded to each other.
  • a conductive layer 177 and a conductive layer 178 are provided on the first surface of the substrate 171.
  • the conductive layer 177 and the conductive layer 178 are formed on the same plane.
  • a material that transmits visible light can be used for the conductive layer 177 and the conductive layer 178.
  • the insulating layer 173 is provided so as to cover the conductive layer 177 and the conductive layer 178.
  • the conductive layer 174 is electrically connected to two conductive layers 178 provided so as to sandwich the conductive layer 177 via an opening provided in the insulating layer 173.
  • the conductive layer 178 is connected to the conductive layer 175.
  • the conductive layer 175 can be formed of the same material and the same process as the conductive layer 174.
  • the conductive layer 175 is electrically connected to the FPC 502 via the conductor 176.
  • As the conductor 176 an anisotropic conductive film or an anisotropic conductive paste can be used as in the case of the conductor 197.
  • a plurality of light emitting diodes can be formed in the same process, and the plurality of light emitting diodes and the plurality of transistors can be electrically connected in the same process. Therefore, it is possible to reduce the manufacturing cost of the display device and improve the yield. Further, the display device can be miniaturized by configuring the elements such as the light emitting diode of the pixel circuit, the transistor of the pixel circuit, and the elements of the drive circuit of the pixel circuit to overlap each other. be able to.
  • FIG. 10 shows a cross-sectional view of the display device 100E.
  • the display device 100E has a pixel 20R that emits red light, a pixel 20G that emits green light, and a pixel 20B that emits blue light. Further, a layer 17 is provided on the layer 14 on which the light emitting diode is provided. The layer 17 is provided with a color conversion layer, a coloring layer, a light-shielding layer, and the like.
  • the pixel 20R has a light emitting diode 110R.
  • the pixel 20G has a light emitting diode 110G.
  • Pixel 20B has a light emitting diode 110B.
  • Each of the light emitting diode 110R, the light emitting diode 110G, and the light emitting diode 110B emits light of the same color. That is, each of the light emitting diode 110R, the light emitting diode 110G, and the light emitting diode 110B can have the same configuration.
  • each of the light emitting diode 110R, the light emitting diode 110G, and the light emitting diode 110B emits blue light.
  • pixels that emit the three primary colors of red (R), green (G), and blue (B) light can be used.
  • a color conversion layer is used for the pixels, and the light emitted by the light emitting diode is converted into light of a required color and emitted to the outside.
  • a light emitting diode that emits blue light it is not necessary to use a color conversion layer for the pixel that emits blue light, so that the manufacturing cost can be reduced.
  • the red pixel 20R is provided with a color conversion layer 360R and a coloring layer 361R in a region overlapping the light emitting diode 110R.
  • the light emitted by the light emitting diode 110R is converted from blue to red by the color conversion layer 360R, the purity of the red light is increased by the coloring layer 361R, and the light is emitted to the outside of the display device 100E.
  • the colored layer 361R may be omitted.
  • the green pixel 20G is provided with a color conversion layer 360G and a coloring layer 361G in a region overlapping the light emitting diode 110G.
  • the light emitted by the light emitting diode 110G is converted from blue to green by the color conversion layer 360G, the purity of the green light is increased by the coloring layer 361G, and the light is emitted to the outside of the display device 100E.
  • the colored layer 361G may be omitted.
  • the blue pixel 20B is provided with a colored layer 361B in a region overlapping the light emitting diode 110B.
  • the light emitted by the light emitting diode 110B is emitted to the outside of the display device 100E after the purity of the blue light is increased by the colored layer 361B.
  • the colored layer 361B may be omitted. As described above, in the blue pixel 20B, the color conversion layer can be omitted.
  • the manufacturing device and the process can be simplified as compared with the case where a plurality of types of light emitting diodes are manufactured.
  • a light-shielding layer 350 is provided between the pixels of each color.
  • the light-shielding layer 350 is provided at least at a position where the light emitting diode 110 blocks light emitted in the lateral direction. If necessary, the light emitting diode 110 may be provided at a position where it blocks light emitted in an oblique direction. Further, a light-shielding layer 351 that covers the periphery of the pixel is provided on the insulating layer 104.
  • the light-shielding layer 350 and the light-shielding layer 351 it is possible to suppress the light emitted by the light emitting diode from entering the pixel region of another adjacent color, and it is possible to prevent color mixing. Therefore, the display quality of the display device can be improved.
  • one of the light-shielding layer 350 and the light-shielding layer 351 may be provided.
  • the materials constituting the light-shielding layer 350 and the light-shielding layer 351 are not particularly limited, and for example, an inorganic material such as a metal material or an organic material such as a resin material containing a pigment (carbon black or the like) or a dye can be used. Further, the light-shielding layer 351 may be formed by laminating colored layers of each color. For example, it can be formed by laminating three colored layers of red, green, and blue.
  • each of the light emitting diode 110R, the light emitting diode 110G, and the light emitting diode 110B may be configured to emit light having a wavelength higher than that of blue light.
  • a light emitting diode capable of emitting light such as bluish purple, purple, or ultraviolet can be used. By using light having high photon energy, color conversion can be efficiently performed in the color conversion layer.
  • the blue pixel 20B is provided with the color conversion layer 360B and the coloring layer 361B in the region overlapping with the light emitting diode 110B.
  • the light emitted by the light emitting diode 110B is converted from bluish purple, purple, or ultraviolet to blue by the color conversion layer 360B, the purity of the blue light is increased by the coloring layer 361B, and the light is emitted to the outside of the display device 100E. ..
  • the colored layer 361B may be omitted.
  • quantum dots have a narrow peak width in the emission spectrum, and can obtain emission with good color purity. Thereby, the display quality of the display device can be improved.
  • the color conversion layer can be formed by using a droplet ejection method (for example, an inkjet method), a coating method, an imprint method, various printing methods (screen printing, offset printing), or the like. Further, a color conversion film such as a quantum dot film may be used.
  • a droplet ejection method for example, an inkjet method
  • a coating method for example, an imprint method
  • various printing methods screen printing, offset printing
  • a color conversion film such as a quantum dot film may be used.
  • a lithography method can be used.
  • a method can be used in which a resist mask is formed on a thin film to be processed, the thin film is processed by etching or the like, and the resist mask is removed.
  • a method may be used in which a photosensitive thin film is formed and then exposed and developed to process the thin film into a desired shape.
  • an island-shaped color conversion layer can be formed by forming a thin film using a photosensitive material mixed with quantum dots and processing the thin film using a lithography method.
  • the material constituting the quantum dot is not particularly limited, and for example, it belongs to a group 14 element, a group 15 element, a group 16 element, a compound composed of a plurality of group 14 elements, and groups 4 to 14.
  • quantum dots examples include a core type, a core-shell type, and a core-multishell type.
  • a protective agent is attached or a protecting group is provided on the surface of the quantum dot. By attaching the protective agent or providing a protecting group, aggregation can be prevented and the solubility in a solvent can be enhanced. It is also possible to reduce reactivity and improve electrical stability.
  • the size of the quantum dots is appropriately adjusted so that light having a desired wavelength can be obtained.
  • the emission of the quantum dots shifts to the blue side, that is, to the high energy side. Therefore, by changing the size of the quantum dots, the wavelengths of the spectra in the ultraviolet region, visible region, and infrared region are used. The emission wavelength can be adjusted over the region.
  • the size (diameter) of the quantum dots is, for example, 0.5 nm or more and 20 nm or less, preferably 1 nm or more and 10 nm or less.
  • the narrower the size distribution of the quantum dots the narrower the emission spectrum becomes, and the better the color purity of the quantum dots can be obtained.
  • the shape of the quantum dot is not particularly limited, and may be spherical, rod-shaped, disk-shaped, or other shape.
  • a quantum rod, which is a rod-shaped quantum dot has a function of exhibiting directional light.
  • the colored layer is a colored layer that transmits light in a specific wavelength range.
  • a color filter that transmits light in the red, green, blue, or yellow wavelength range can be used.
  • the material that can be used for the colored layer include a metal material, a resin material, a resin material containing a pigment or a dye, and the like.
  • the structure of the transistor included in the display device is not particularly limited. For example, it may be a planar type transistor, a stagger type transistor, or an inverted stagger type transistor. Further, a transistor structure having either a top gate structure or a bottom gate structure may be used. Alternatively, gate electrodes may be provided above and below the channel.
  • the transistor included in the display device for example, a transistor using a metal oxide in the channel forming region can be used. As a result, a transistor having an extremely small off-current can be realized.
  • a transistor having silicon in the channel forming region may be applied to the transistor included in the display device.
  • the transistor include a transistor having amorphous silicon, a transistor having crystalline silicon (typically, low-temperature polysilicon), and a transistor having single crystal silicon.
  • a transistor using a metal oxide in the channel forming region and a transistor having silicon in the channel forming region may be used in combination.
  • the insulators, conductors, oxides, and semiconductors shown below are formed by a sputtering method, a chemical vapor deposition (CVD) method, a molecular beam epitaxy (MBE) method, and a pulse laser. It can be carried out by using a deposition (PLD: Pulsed Laser Deposition) method, an atomic layer deposition (ALD: Atomic Layer Deposition) method, or the like.
  • a deposition PLD: Pulsed Laser Deposition
  • ALD Atomic Layer Deposition
  • the term "insulator” can be paraphrased as an insulating film or an insulating layer.
  • the term “conductor” can be rephrased as a conductive film or a conductive layer.
  • the term “oxide” can be paraphrased as an oxide film or an oxide layer.
  • semiconductor can be paraphrased as a semiconductor film or a semiconductor layer.
  • FIG. 12A shows a top view of the transistor 200. In FIG. 12A, some elements are not shown for the sake of clarity.
  • FIG. 12B shows a cross-sectional view between the alternate long and short dash lines A1-A2 in FIG. 12A.
  • FIG. 12B can be said to be a cross-sectional view of the transistor 200 in the channel length direction.
  • FIG. 12C shows a cross-sectional view between the alternate long and short dash lines A3-A4 in FIG. 12A.
  • FIG. 12C can be said to be a cross-sectional view of the transistor 200 in the channel width direction.
  • FIG. 12D shows a cross-sectional view between the alternate long and short dash lines A5-A6 in FIG. 12A.
  • the semiconductor devices shown in FIGS. 12A to 12D include an insulator 212 on a substrate (not shown), an insulator 214 on the insulator 212, a transistor 200 on the insulator 214, and an insulator 280 on the transistor 200. And an insulator 282 on the insulator 280, an insulator 283 on the insulator 282, and an insulator 285 on the insulator 283.
  • the insulator 212, the insulator 214, the insulator 280, the insulator 282, the insulator 283, and the insulator 285 function as an interlayer insulating film.
  • conductor 240 (conductor 240a and conductor 240b) that is electrically connected to the transistor 200 and functions as a plug.
  • An insulator 241 (insulator 241a and insulator 241b) is provided in contact with the side surface of the conductor 240 that functions as a plug.
  • a conductor 246 (conductor 246a and a conductor 246b) that is electrically connected to the conductor 240 and functions as wiring is provided.
  • the insulator 241a is provided in contact with the inner wall of the opening of the insulator 280, the insulator 282, the insulator 283, and the insulator 285, and the first conductor of the conductor 240a is provided in contact with the side surface of the insulator 241a. Further, a second conductor of the conductor 240a is provided inside. Further, the insulator 241b is provided in contact with the inner wall of the opening of the insulator 280, the insulator 282, the insulator 283, and the insulator 285, and the first conductor of the conductor 240b is in contact with the side surface of the insulator 241b. A second conductor of the conductor 240b is provided inside.
  • the height of the upper surface of the conductor 240 and the height of the upper surface of the insulator 285 in the region overlapping the conductor 246 can be made about the same.
  • the conductor 240 may be provided as a single layer or a laminated structure having three or more layers. When the structure has a laminated structure, an ordinal number may be given in the order of formation to distinguish them.
  • the transistor 200 includes an insulator 216 on the insulator 214, a conductor 205 (conductor 205a, and a conductor 205b) arranged so as to be embedded in the insulator 216, and the insulator 205.
  • insulator 260b and an insulator 222, an insulator 224, an oxide 230a, an oxide 230b, an oxide 243a, an oxide 243b, a conductor 242a, a conductor 242b, an insulator 271a, and an insulator 271b. It has an insulator 275 and.
  • the oxide 230a and the oxide 230b may be collectively referred to as the oxide 230.
  • the conductor 242a and the conductor 242b may be collectively referred to as a conductor 242.
  • the insulator 271a and the insulator 271b may be collectively referred to as an insulator 271.
  • the insulator 280 and the insulator 275 are provided with openings that reach the oxide 230b.
  • An insulator 250 and a conductor 260 are arranged in the opening. Further, in the channel length direction of the transistor 200, the conductor 260 and the insulator 250 are provided between the insulator 271a, the conductor 242a, and the oxide 243a, and the insulator 271b, the conductor 242b, and the oxide 243b. Has been done.
  • the insulator 250 has a region in contact with the side surface of the conductor 260 and a region in contact with the bottom surface of the conductor 260.
  • the oxide 230 preferably has an oxide 230a arranged on the insulator 224 and an oxide 230b arranged on the oxide 230a.
  • the oxide 230a By having the oxide 230a under the oxide 230b, it is possible to suppress the diffusion of impurities into the oxide 230b from the structure formed below the oxide 230a.
  • the transistor 200 shows a configuration in which the oxide 230 is laminated with two layers of the oxide 230a and the oxide 230b, but the present invention is not limited to this.
  • a single layer of the oxide 230b or a laminated structure of three or more layers may be provided, or each of the oxide 230a and the oxide 230b may have a laminated structure.
  • the conductor 260 functions as a first gate (also referred to as a top gate) electrode, and the conductor 205 functions as a second gate (also referred to as a back gate) electrode.
  • the insulator 250 functions as a first gate insulating film, and the insulator 224 and the insulator 222 function as a second gate insulating film.
  • the conductor 242a functions as one of the source electrode and the drain electrode, and the conductor 242b functions as the other of the source electrode and the drain electrode.
  • at least a part of the region of the oxide 230 that overlaps with the conductor 260 functions as a channel forming region.
  • the oxide 230b has one of the source region and the drain region in the region superimposing on the conductor 242a, and has the other of the source region and the drain region in the region superimposing on the conductor 242b. Further, the oxide 230b has a channel forming region (a region shown by a shaded portion in FIG. 12B) in a region sandwiched between the source region and the drain region.
  • the channel formation region is a high resistance region having a low carrier concentration because it has less oxygen deficiency or a lower impurity concentration than the source region and drain region.
  • the carrier concentration in the channel forming region is preferably 1 ⁇ 10 18 cm -3 or less, more preferably less than 1 ⁇ 10 17 cm -3, and less than 1 ⁇ 10 16 cm -3. It is even more preferably less than 1 ⁇ 10 13 cm -3 , even more preferably less than 1 ⁇ 10 12 cm -3.
  • the lower limit of the carrier concentration in the channel formation region is not particularly limited, but may be, for example, 1 ⁇ 10 -9 cm -3 .
  • the oxide 230a may also have a channel formation region, a source region, and a drain region.
  • a metal oxide also referred to as an oxide semiconductor
  • oxide 230 oxide 230a and oxide 230b
  • the metal oxide functioning as a semiconductor it is preferable to use a metal oxide having a band gap of 2 eV or more, preferably 2.5 eV or more. As described above, by using a metal oxide having a large bandgap, the off-current of the transistor can be reduced.
  • oxide 230 for example, In-M-Zn oxide having indium, element M and zinc (element M is aluminum, gallium, yttrium, tin, copper, vanadium, beryllium, boron, titanium, iron, nickel, germanium). , Zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. (one or more) and the like may be used. Further, as the oxide 230, In—Ga oxide, In—Zn oxide, or indium oxide may be used.
  • the atomic number ratio of In to the element M in the metal oxide used for the oxide 230b is larger than the atomic number ratio of In to the element M in the metal oxide used for the oxide 230a.
  • a metal oxide having a composition in the vicinity thereof may be used.
  • a metal oxide having a composition may be used.
  • the composition in the vicinity includes a range of ⁇ 30% of the desired atomic number ratio. Further, it is preferable to use gallium as the element M.
  • the above atomic number ratio is not limited to the atomic number ratio of the formed metal oxide, but is the atomic number ratio of the sputtering target used for forming the metal oxide. It may be.
  • the oxide 230a under the oxide 230b By arranging the oxide 230a under the oxide 230b in this way, it is possible to suppress the diffusion of impurities and oxygen from the structure formed below the oxide 230a to the oxide 230b. ..
  • the oxide 230a and the oxide 230b have a common element (main component) other than oxygen, the defect level density at the interface between the oxide 230a and the oxide 230b can be lowered. Since the defect level density at the interface between the oxide 230a and the oxide 230b can be lowered, the influence of interfacial scattering on carrier conduction is small, and a high on-current can be obtained.
  • each oxide 230b has crystallinity.
  • CAAC-OS c-axis aligned crystalline semiconductor semiconductor
  • CAAC-OS is highly crystalline, has a dense structure, impurities and defects (e.g. oxygen vacancies (V O: also referred to as oxygen vacancy), etc.) is less metal oxides.
  • the CAAC-OS is subjected to heat treatment at a temperature at which the metal oxide does not polycrystallize (for example, 400 ° C. or higher and 600 ° C. or lower), whereby CAAC-OS has a more crystalline and dense structure. Can be. In this way, by increasing the density of CAAC-OS, the diffusion of impurities or oxygen in the CAAC-OS can be further reduced.
  • the metal oxide having CAAC-OS has stable physical properties. Therefore, the metal oxide having CAAC-OS is resistant to heat and has high reliability.
  • At least one of the insulator 212, the insulator 214, the insulator 271, the insulator 275, the insulator 282, and the insulator 283 has impurities such as water and hydrogen from the substrate side or from above the transistor 200. It is preferable that it functions as a barrier insulating film that suppresses diffusion into.
  • At least one of insulator 212, insulator 214, insulator 271, insulator 275, insulator 282, and insulator 283 is a hydrogen atom, a hydrogen molecule, a water molecule, a nitrogen atom, a nitrogen molecule, and a nitrogen oxide molecule
  • an insulating material having a function of suppressing the diffusion of impurities such as N 2 O, NO, NO 2
  • copper atoms the above impurities are difficult to permeate
  • it is preferable to use an insulating material having a function of suppressing the diffusion of oxygen for example, at least one oxygen atom, oxygen molecule, etc.) (the oxygen is difficult to permeate).
  • the barrier insulating film refers to an insulating film having a barrier property.
  • the barrier property is a function of suppressing the diffusion of the corresponding substance (also referred to as low permeability).
  • the corresponding substance has a function of capturing and fixing (also called gettering).
  • Examples of the insulator 212, insulator 214, insulator 271, insulator 275, insulator 282, and insulator 283 include aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, indium gallium zinc oxide, silicon nitride, and the like. Alternatively, silicon nitride oxide or the like can be used.
  • silicon nitride oxide or the like can be used as the insulator 212, the insulator 275, and the insulator 283, it is preferable to use silicon nitride or the like having a higher hydrogen barrier property.
  • the insulator 214, the insulator 271, and the insulator 282 it is preferable to use aluminum oxide or magnesium oxide having a high function of capturing hydrogen and fixing hydrogen.
  • the transistor 200 has an insulator 212, an insulator 214, an insulator 271, an insulator 275, an insulator 282, and an insulator 283, which have a function of suppressing the diffusion of impurities such as water and hydrogen, and oxygen. It is preferable to have a structure surrounded by.
  • an oxide having an amorphous structure as the insulator 212, the insulator 214, the insulator 271, the insulator 275, the insulator 282, and the insulator 283.
  • a metal oxide such as AlO x (x is an arbitrary number larger than 0) or MgO y (y is an arbitrary number larger than 0).
  • an oxygen atom has a dangling bond, and the dangling bond may have a property of capturing or fixing hydrogen.
  • a metal oxide having such an amorphous structure as a component of the transistor 200 or providing it around the transistor 200, hydrogen contained in the transistor 200 or hydrogen existing around the transistor 200 is captured or fixed. be able to. In particular, it is preferable to capture or fix hydrogen contained in the channel forming region of the transistor 200.
  • a metal oxide having an amorphous structure as a component of the transistor 200 or providing it around the transistor 200, the transistor 200 having good characteristics and high reliability and a semiconductor device can be manufactured.
  • the insulator 212, the insulator 214, the insulator 271, the insulator 275, the insulator 282, and the insulator 283 preferably have an amorphous structure, but a region having a polycrystalline structure is partially formed. May be good. Further, the insulator 212, the insulator 214, the insulator 271, the insulator 275, the insulator 282, and the insulator 283 have a multilayer structure in which a layer having an amorphous structure and a layer having a polycrystalline structure are laminated. May be good. For example, it may be a laminated structure in which a layer having a polycrystalline structure is formed on a layer having an amorphous structure.
  • the film formation of the insulator 212, the insulator 214, the insulator 271, the insulator 275, the insulator 282, and the insulator 283 may be performed by using, for example, a sputtering method. Since it is not necessary to use hydrogen as the film forming gas in the sputtering method, the hydrogen concentration of the insulator 212, the insulator 214, the insulator 271, the insulator 275, the insulator 282, and the insulator 283 can be reduced.
  • the film forming method is not limited to the sputtering method, and a CVD method, an MBE method, a PLD method, an ALD method, or the like may be appropriately used.
  • the insulator 216, the insulator 280, and the insulator 285 preferably have a lower dielectric constant than the insulator 214.
  • a material having a low dielectric constant as an interlayer insulating film, it is possible to reduce the parasitic capacitance generated between the wirings.
  • silicon oxide, silicon oxide nitride, silicon nitride oxide, silicon nitride, silicon oxide added with fluorine, silicon oxide added with carbon, carbon and nitrogen were added. Silicon oxide, silicon oxide having pores, or the like may be appropriately used.
  • the conductor 205 is arranged so as to overlap the oxide 230 and the conductor 260.
  • the conductor 205 has a conductor 205a and a conductor 205b.
  • the conductor 205a is provided in contact with the bottom surface and the side wall of the opening.
  • the conductor 205b is provided so as to be embedded in the recess formed in the conductor 205a.
  • the height of the upper surface of the conductor 205b is substantially the same as the height of the upper surface of the conductor 205a and the height of the upper surface of the insulator 216.
  • the conductor 205a a conductive material that can be used for the conductor 260a described later may be used.
  • the conductor 205b a conductive material that can be used for the conductor 260b described later may be used.
  • the conductor 205 shows a configuration in which the conductor 205a and the conductor 205b are laminated, but the present invention is not limited to this.
  • the conductor 205 may be provided as a single-layer, two-layer, or four-layer or higher laminated structure.
  • the insulator 222 and the insulator 224 function as a gate insulating film.
  • the insulator 222 preferably has a function of suppressing the diffusion of hydrogen (for example, at least one hydrogen atom, hydrogen molecule, etc.). Further, the insulator 222 preferably has a function of suppressing the diffusion of oxygen (for example, at least one oxygen atom, oxygen molecule, etc.). For example, the insulator 222 preferably has a function of suppressing the diffusion of one or both of hydrogen and oxygen more than the insulator 224.
  • the insulator 222 it is preferable to use an insulator containing oxides of one or both of aluminum and hafnium, which are insulating materials.
  • the insulator it is preferable to use aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate) and the like.
  • a barrier insulating film that can be used for the above-mentioned insulator 214 or the like may be used.
  • the insulator 224 silicon oxide, silicon oxide nitride, or the like may be appropriately used. By providing the insulator 224 containing oxygen in contact with the oxide 230, oxygen deficiency in the oxide 230 can be reduced and the reliability of the transistor 200 can be improved. Further, the insulator 224 is preferably processed into an island shape so as to be superimposed on the oxide 230a. In this case, the insulator 275 is in contact with the side surface of the insulator 224 and the upper surface of the insulator 222.
  • the insulator 224 and the insulator 280 can be separated by the insulator 275, so that the oxygen contained in the insulator 280 diffuses into the insulator 224 and the oxygen in the insulator 224 becomes excessive. It can be suppressed.
  • the insulator 222 and the insulator 224 may have a laminated structure of two or more layers.
  • the laminated structure is not limited to the same material, and may be a laminated structure made of different materials.
  • FIG. 12B and the like show a configuration in which the insulator 224 is superposed on the oxide 230a to form an island shape, the present invention is not limited to this. If the amount of oxygen contained in the insulator 224 can be adjusted appropriately, the insulator 224 may not be patterned, as in the insulator 222.
  • Oxide 243a and oxide 243b are provided on oxide 230b.
  • the oxide 243a and the oxide 243b are provided so as to be separated from each other with the conductor 260 interposed therebetween.
  • the oxide 243 (oxide 243a and oxide 243b) preferably has a function of suppressing the permeation of oxygen.
  • electricity between the conductor 242 and the oxide 230b can be obtained. This is preferable because the resistance is reduced. If the electrical resistance between the conductor 242 and the oxide 230b can be sufficiently reduced, the oxide 243 may not be provided.
  • a metal oxide having an element M may be used.
  • the element M aluminum, gallium, yttrium, or tin may be used.
  • Oxide 243 preferably has a higher concentration of element M than oxide 230b.
  • gallium oxide may be used as the oxide 243.
  • a metal oxide such as In—M—Zn oxide may be used.
  • the atomic number ratio of the element M to In is preferably larger than the atomic number ratio of the element M to In in the metal oxide used for the oxide 230b.
  • the film thickness of the oxide 243 is preferably 0.5 nm or more and 5 nm or less, more preferably 1 nm or more and 3 nm or less, and further preferably 1 nm or more and 2 nm or less.
  • the conductor 242a is provided in contact with the upper surface of the oxide 243a, and the conductor 242b is provided in contact with the upper surface of the oxide 243b.
  • the conductor 242a and the conductor 242b each function as a source electrode or a drain electrode of the transistor 200.
  • Examples of the conductor 242 include a nitride containing tantalum, a nitride containing titanium, a nitride containing molybdenum, a nitride containing tungsten, a nitride containing tantalum and aluminum, and titanium. It is preferable to use a nitride containing aluminum and the like. In one aspect of the invention, tantalum-containing nitrides are particularly preferred. Further, for example, ruthenium oxide, ruthenium nitride, an oxide containing strontium and ruthenium, an oxide containing lanthanum and nickel, and the like may be used. These materials are preferable because they are conductive materials that are difficult to oxidize or materials that maintain conductivity even when oxygen is absorbed.
  • the conductor 242 it is preferable that no curved surface is formed between the side surface of the conductor 242 and the upper surface of the conductor 242.
  • the cross-sectional area of the conductor 242 in the cross section in the channel width direction as shown in FIG. 12D can be increased.
  • the conductivity of the conductor 242 can be increased, and the on-current of the transistor 200 can be increased.
  • the insulator 271a is provided in contact with the upper surface of the conductor 242a, and the insulator 271b is provided in contact with the upper surface of the conductor 242b.
  • the insulator 275 is in contact with the upper surface of the insulator 222, the side surface of the insulator 224, the side surface of the oxide 230a, the side surface of the oxide 230b, the side surface of the oxide 243, the side surface of the conductor 242, the side surface and the upper surface of the insulator 271. Is provided.
  • the insulator 275 has an opening formed in a region where the insulator 250 and the conductor 260 are provided.
  • the insulator 224 or the insulator can be provided. It is possible to capture impurities such as hydrogen contained in 216 and the like so that the amount of hydrogen in the region becomes a constant value. In this case, it is preferable that the insulator 214, the insulator 271, and the insulator 275 contain aluminum oxide having an amorphous structure.
  • the insulator 250 has an insulator 250a and an insulator 250b on the insulator 250a, and functions as a gate insulating film. Further, the insulator 250a may be arranged in contact with the upper surface of the oxide 230b, the side surface of the oxide 243, the side surface of the conductor 242, the side surface of the insulator 271, the side surface of the insulator 275, and the side surface of the insulator 280. preferable.
  • the film thickness of the insulator 250 is preferably 1 nm or more and 20 nm or less.
  • the insulator 250a includes silicon oxide, silicon oxide, silicon nitride, silicon nitride, silicon oxide to which fluorine is added, silicon oxide to which carbon is added, silicon oxide to which carbon and nitrogen are added, silicon oxide having pores, and the like. Can be used. In particular, silicon oxide and silicon nitride are preferable because they are heat-stable. Like the insulator 224, the insulator 250a preferably has a reduced concentration of impurities such as water and hydrogen in the insulator 250a.
  • the insulator 250a is formed by using an insulator in which oxygen is released by heating
  • the insulator 250b is formed by using an insulator having a function of suppressing the diffusion of oxygen.
  • oxygen contained in the insulator 250a can be suppressed from diffusing into the conductor 260. That is, it is possible to suppress a decrease in the amount of oxygen supplied to the oxide 230.
  • oxidation of the conductor 260 by oxygen contained in the insulator 250a can be suppressed.
  • the insulator 250b can be provided using the same material as the insulator 222.
  • the insulator 250b specifically, a metal oxide containing one or more selected from hafnium, aluminum, gallium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, germanium, magnesium and the like.
  • a metal oxide that can be used as the oxide 230 can be used.
  • the insulator it is preferable to use aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate) and the like.
  • the film thickness of the insulator 250b is preferably 0.5 nm or more and 3.0 nm or less, and more preferably 1.0 nm or more and 1.5 nm or less.
  • the insulator 250 is shown in a two-layer laminated structure in FIGS. 12B and 12C, the present invention is not limited to this.
  • the insulator 250 may have a single layer or a laminated structure of three or more layers.
  • the conductor 260 is provided on the insulator 250b and functions as a first gate electrode of the transistor 200.
  • the conductor 260 preferably has a conductor 260a and a conductor 260b arranged on the conductor 260a.
  • the conductor 260a is preferably arranged so as to wrap the bottom surface and the side surface of the conductor 260b.
  • the upper surface of the conductor 260 substantially coincides with the upper surface of the insulator 250.
  • the conductor 260 is shown as a two-layer structure of the conductor 260a and the conductor 260b in FIGS. 12B and 12C, it may be a single-layer structure or a laminated structure of three or more layers.
  • the conductor 260a it is preferable to use a conductive material having a function of suppressing the diffusion of impurities such as hydrogen atom, hydrogen molecule, water molecule, nitrogen atom, nitrogen molecule, nitrogen oxide molecule and copper atom.
  • impurities such as hydrogen atom, hydrogen molecule, water molecule, nitrogen atom, nitrogen molecule, nitrogen oxide molecule and copper atom.
  • a conductive material having a function of suppressing the diffusion of oxygen for example, at least one oxygen atom, oxygen molecule, etc.
  • the conductor 260a has a function of suppressing the diffusion of oxygen, it is possible to prevent the conductor 260b from being oxidized by the oxygen contained in the insulator 250 and the conductivity from being lowered.
  • the conductive material having a function of suppressing the diffusion of oxygen for example, titanium, titanium nitride, tantalum, tantalum nitride, ruthenium, ruthenium oxide and the like are preferably used.
  • the conductor 260 also functions as wiring, it is preferable to use a conductor having high conductivity.
  • a conductor having high conductivity for example, as the conductor 260b, a conductive material containing tungsten, copper, or aluminum as a main component can be used.
  • the conductor 260b may have a laminated structure, for example, a laminated structure of titanium or titanium nitride and the conductive material.
  • the conductor 260 is self-aligned so as to fill the opening formed in the insulator 280 or the like.
  • the conductor 260 can be reliably arranged in the region between the conductor 242a and the conductor 242b without aligning the conductor 260.
  • the height is preferably lower than the height of the bottom surface of the oxide 230b.
  • the conductor 260 which functions as a gate electrode, covers the side surface and the upper surface of the channel forming region of the oxide 230b via an insulator 250 or the like, so that the electric field of the conductor 260 is covered with the channel forming region of the oxide 230b. It becomes easier to act on the whole. Therefore, the on-current of the transistor 200 can be increased and the frequency characteristics can be improved.
  • the difference is 0 nm or more and 100 nm or less, preferably 3 nm or more and 50 nm or less, and more preferably 5 nm or more and 20 nm or less.
  • the insulator 280 is provided on the insulator 275, and an opening is formed in a region where the insulator 250 and the conductor 260 are provided. Further, the upper surface of the insulator 280 may be flattened. In this case, it is preferable that the upper surface of the insulator 280 substantially coincides with the upper surface of the insulator 250 and the upper surface of the conductor 260.
  • the insulator 282 is provided in contact with the upper surface of the insulator 280, the upper surface of the insulator 250, and the upper surface of the conductor 260.
  • the insulator 282 preferably functions as a barrier insulating film that suppresses impurities such as water and hydrogen from diffusing into the insulator 280 from above, and preferably has a function of capturing impurities such as hydrogen. Further, the insulator 282 preferably functions as a barrier insulating film that suppresses the permeation of oxygen.
  • an insulator such as aluminum oxide may be used.
  • the insulator 282 which has a function of capturing impurities such as hydrogen in contact with the insulator 280 in the region sandwiched between the insulator 212 and the insulator 283, hydrogen contained in the insulator 280 and the like, etc. Impurities can be captured and the amount of hydrogen in the region can be kept constant.
  • the conductor 240a and the conductor 240b it is preferable to use a conductive material containing tungsten, copper, or aluminum as a main component. Further, the conductor 240a and the conductor 240b may have a laminated structure. When the conductor 240 has a laminated structure, it is preferable to use a conductive material having a function of suppressing the permeation of impurities such as water and hydrogen as the conductor in contact with the insulator 241. For example, a conductive material that can be used for the above-mentioned conductor 260a may be used.
  • an insulator such as silicon nitride, aluminum oxide, or silicon nitride may be used. Since the insulator 241a and the insulator 241b are provided in contact with the insulator 283, the insulator 282, and the insulator 271, impurities such as water and hydrogen contained in the insulator 280 and the like are removed from the conductor 240a and the conductor 240b. It is possible to prevent the oxide 230 from being mixed with the oxide 230.
  • the conductor 246 (conductor 246a and conductor 246b) that functions as wiring may be arranged in contact with the upper surface of the conductor 240a and the upper surface of the conductor 240b.
  • the conductor 246 it is preferable to use a conductive material containing tungsten, copper, or aluminum as a main component.
  • the conductor may have a laminated structure, for example, titanium or titanium nitride may be laminated with the conductive material.
  • the conductor may be formed so as to be embedded in an opening provided in the insulator.
  • metal oxide also referred to as an oxide semiconductor
  • the metal oxide preferably contains at least indium or zinc. In particular, it preferably contains indium and zinc. In addition to them, it is preferable that aluminum, gallium, yttrium, tin and the like are contained. It may also contain one or more selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt and the like. ..
  • the metal oxide can be formed by a CVD method such as a sputtering method, a metalorganic chemical vapor deposition (MOCVD) method, or an ALD method.
  • a CVD method such as a sputtering method, a metalorganic chemical vapor deposition (MOCVD) method, or an ALD method.
  • the crystal structure of the oxide semiconductor includes amorphous (including compactly atomous), CAAC (c-axis-aligned crystal line), nc (nano crystal line), CAC (crowd-aligned crystal), single crystal (single crystal), and single crystal. Crystals (poly crystal) and the like can be mentioned.
  • the crystal structure of the film or substrate can be evaluated using an X-ray diffraction (XRD) spectrum.
  • XRD X-ray diffraction
  • it can be evaluated using the XRD spectrum obtained by GIXD (Glazing-Incidence XRD) measurement.
  • GIXD Gazing-Incidence XRD
  • the GIXD method is also referred to as a thin film method or a Seemann-Bohlin method.
  • the shape of the peak of the XRD spectrum is almost symmetrical.
  • the shape of the peak of the XRD spectrum is asymmetrical.
  • the asymmetrical shape of the peaks in the XRD spectrum clearly indicates the presence of crystals in the film or substrate. In other words, the film or substrate cannot be said to be in an amorphous state unless the shape of the peak of the XRD spectrum is symmetrical.
  • the crystal structure of the film or substrate can be evaluated by a diffraction pattern (also referred to as a microelectron diffraction pattern) observed by a micro electron diffraction method (NBED: Nano Beam Electron Diffraction).
  • a diffraction pattern also referred to as a microelectron diffraction pattern
  • NBED Nano Beam Electron Diffraction
  • halos are observed, and it can be confirmed that the quartz glass is in an amorphous state.
  • a spot-like pattern is observed instead of a halo. Therefore, it is presumed that the IGZO film formed at room temperature is neither in a crystalline state nor in an amorphous state, is in an intermediate state, and cannot be concluded to be in an amorphous state.
  • oxide semiconductors may be classified differently from the above.
  • oxide semiconductors are divided into single crystal oxide semiconductors and other non-single crystal oxide semiconductors.
  • the non-single crystal oxide semiconductor include the above-mentioned CAAC-OS and nc-OS.
  • the non-single crystal oxide semiconductor includes a polycrystalline oxide semiconductor, a pseudo-amorphous oxide semiconductor (a-like OS: amorphous-like oxide semiconductor), an amorphous oxide semiconductor, and the like.
  • CAAC-OS CAAC-OS
  • nc-OS nc-OS
  • a-like OS the details of the above-mentioned CAAC-OS, nc-OS, and a-like OS will be described.
  • CAAC-OS is an oxide semiconductor having a plurality of crystal regions, and the plurality of crystal regions are oriented in a specific direction on the c-axis.
  • the specific direction is the thickness direction of the CAAC-OS film, the normal direction of the surface to be formed of the CAAC-OS film, or the normal direction of the surface of the CAAC-OS film.
  • the crystal region is a region having periodicity in the atomic arrangement. When the atomic arrangement is regarded as a lattice arrangement, the crystal region is also a region in which the lattice arrangement is aligned. Further, the CAAC-OS has a region in which a plurality of crystal regions are connected in the ab plane direction, and the region may have distortion.
  • the strain refers to a region in which a plurality of crystal regions are connected in which the orientation of the lattice arrangement changes between a region in which the lattice arrangement is aligned and a region in which another grid arrangement is aligned. That is, CAAC-OS is an oxide semiconductor that is c-axis oriented and not clearly oriented in the ab plane direction.
  • Each of the plurality of crystal regions is composed of one or a plurality of minute crystals (crystals having a maximum diameter of less than 10 nm).
  • the maximum diameter of the crystal region is less than 10 nm.
  • the size of the crystal region may be about several tens of nm.
  • CAAC-OS has indium (In) and oxygen. It tends to have a layered crystal structure (also referred to as a layered structure) in which a layer (hereinafter, In layer) and a layer having elements M, zinc (Zn), and oxygen (hereinafter, (M, Zn) layer) are laminated. There is. Indium and element M can be replaced with each other. Therefore, the (M, Zn) layer may contain indium. In addition, the In layer may contain the element M. The In layer may contain Zn.
  • the layered structure is observed as a lattice image in, for example, a high-resolution TEM (Transmission Electron Microscope) image.
  • the position of the peak indicating the c-axis orientation may vary depending on the type and composition of the metal elements constituting CAAC-OS.
  • a plurality of bright spots are observed in the electron diffraction pattern of the CAAC-OS film.
  • a certain spot and another spot are observed at point-symmetrical positions with the spot of the incident electron beam passing through the sample (also referred to as a direct spot) as the center of symmetry.
  • the lattice arrangement in the crystal region is based on a hexagonal lattice, but the unit lattice is not limited to a regular hexagon and may be a non-regular hexagon. Further, in the above strain, it may have a lattice arrangement such as a pentagon or a heptagon.
  • a clear grain boundary cannot be confirmed even in the vicinity of strain. That is, it can be seen that the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This is because CAAC-OS can tolerate distortion due to the fact that the arrangement of oxygen atoms is not dense in the ab plane direction, or that the bond distance between atoms changes due to the substitution of metal atoms. It is thought that this is the reason.
  • CAAC-OS for which no clear crystal grain boundary is confirmed, is one of the crystalline oxides having a crystal structure suitable for the semiconductor layer of the transistor.
  • a configuration having Zn is preferable.
  • In-Zn oxide and In-Ga-Zn oxide are more suitable than In oxide because they can suppress the generation of grain boundaries.
  • CAAC-OS is an oxide semiconductor having high crystallinity and no clear grain boundary is confirmed. Therefore, it can be said that CAAC-OS is unlikely to cause a decrease in electron mobility due to grain boundaries. Further, since the crystallinity of the oxide semiconductor may be lowered due to the mixing of impurities and the generation of defects, CAAC-OS can be said to be an oxide semiconductor having few impurities and defects (oxygen deficiency, etc.). Therefore, the oxide semiconductor having CAAC-OS has stable physical properties. Therefore, the oxide semiconductor having CAAC-OS is resistant to heat and has high reliability. CAAC-OS is also stable against high temperatures (so-called thermal budgets) in the manufacturing process. Therefore, when CAAC-OS is used for the OS transistor, the degree of freedom in the manufacturing process can be expanded.
  • nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less).
  • nc-OS has tiny crystals. Since the size of the minute crystal is, for example, 1 nm or more and 10 nm or less, particularly 1 nm or more and 3 nm or less, the minute crystal is also referred to as a nanocrystal.
  • nc-OS does not show regularity in crystal orientation between different nanocrystals. Therefore, no orientation is observed in the entire film.
  • nc-OS may be indistinguishable from a-like OS or amorphous oxide semiconductor depending on the analysis method.
  • a structural analysis is performed on an nc-OS film using an XRD apparatus, a peak indicating crystallinity is not detected in the Out-of-plane XRD measurement using a ⁇ / 2 ⁇ scan.
  • electron beam diffraction also referred to as selected area electron diffraction
  • a diffraction pattern such as a halo pattern is performed. Is observed.
  • electron diffraction also referred to as nanobeam electron diffraction
  • an electron beam having a probe diameter for example, 1 nm or more and 30 nm or less
  • An electron diffraction pattern in which a plurality of spots are observed in a ring-shaped region centered on a direct spot may be acquired.
  • the a-like OS is an oxide semiconductor having a structure between nc-OS and an amorphous oxide semiconductor.
  • the a-like OS has a void or low density region. That is, a-like OS has lower crystallinity than nc-OS and CAAC-OS. In addition, a-like OS has a higher hydrogen concentration in the membrane than nc-OS and CAAC-OS.
  • CAC-OS relates to the material composition.
  • CAC-OS is, for example, a composition of a material in which the elements constituting the metal oxide are unevenly distributed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or a size close thereto.
  • the metal oxide one or more metal elements are unevenly distributed, and the region having the metal element has a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or a size close thereto.
  • the mixed state is also called a mosaic shape or a patch shape.
  • CAC-OS has a structure in which the material is separated into a first region and a second region to form a mosaic shape, and the first region is distributed in the membrane (hereinafter, also referred to as a cloud shape). It says.). That is, CAC-OS is a composite metal oxide having a structure in which the first region and the second region are mixed.
  • the atomic number ratios of In, Ga, and Zn with respect to the metal elements constituting CAC-OS in the In-Ga-Zn oxide are expressed as [In], [Ga], and [Zn], respectively.
  • the first region is a region in which [In] is larger than [In] in the composition of the CAC-OS film.
  • the second region is a region in which [Ga] is larger than [Ga] in the composition of the CAC-OS film.
  • the first region is a region in which [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region.
  • the second region is a region in which [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.
  • the first region is a region in which indium oxide, indium zinc oxide, or the like is the main component.
  • the second region is a region in which gallium oxide, gallium zinc oxide, or the like is the main component. That is, the first region can be rephrased as a region containing In as a main component. Further, the second region can be rephrased as a region containing Ga as a main component.
  • CAC-OS in In-Ga-Zn oxide is a region containing Ga as a main component and a part of In as a main component in a material composition containing In, Ga, Zn, and O. Each of the regions is mosaic, and these regions are randomly present. Therefore, it is presumed that CAC-OS has a structure in which metal elements are non-uniformly distributed.
  • the CAC-OS can be formed by a sputtering method, for example, under the condition that the substrate is not heated.
  • a sputtering method one or more selected from an inert gas (typically argon), an oxygen gas, and a nitrogen gas may be used as the film forming gas. good.
  • the lower the flow rate ratio of oxygen gas to the total flow rate of the film-forming gas at the time of film formation is preferable.
  • the flow rate ratio of oxygen gas to the total flow rate of the film-forming gas at the time of film formation is preferably 0% or more and less than 30%. Is preferably 0% or more and 10% or less.
  • EDX Energy Dispersive X-ray spectroscopy
  • the first region is a region having higher conductivity than the second region. That is, when the carrier flows through the first region, the conductivity as a metal oxide is exhibited. Therefore, high field effect mobility ( ⁇ ) can be realized by distributing the first region in the metal oxide in a cloud shape.
  • the second region is a region having higher insulating properties than the first region. That is, the leakage current can be suppressed by distributing the second region in the metal oxide.
  • CAC-OS when CAC-OS is used for a transistor, the conductivity caused by the first region and the insulating property caused by the second region act complementarily to switch the function (On / Off). Function) can be added to the CAC-OS. That is, the CAC-OS has a conductive function in a part of the material and an insulating function in a part of the material, and has a function as a semiconductor in the whole material. By separating the conductive function and the insulating function, both functions can be maximized. Therefore, by using CAC-OS as a transistor, high on-current ( Ion ), high field-effect mobility ( ⁇ ), and good switching operation can be realized.
  • Ion on-current
  • ⁇ high field-effect mobility
  • CAC-OS is most suitable for various semiconductor devices including display devices.
  • Oxide semiconductors have various structures, and each has different characteristics.
  • the oxide semiconductor of one aspect of the present invention has two or more of amorphous oxide semiconductor, polycrystalline oxide semiconductor, a-like OS, CAC-OS, nc-OS, and CAAC-OS. You may.
  • the display device of the present embodiment has a plurality of pixels arranged in a matrix of m rows and n columns (m and n are integers of 1 or more each).
  • FIG. 13 shows an example of a circuit diagram of pixels PIX (i, j) (i is an integer of 1 or more and m or less, and j is an integer of 1 or more and n or less).
  • the pixel PIX (i, j) shown in FIG. 13 has a light emitting diode 110, a switch SW21, a transistor M, and a capacitance C1 described in the first embodiment.
  • the transistor M corresponds to the transistor 120 or the transistor 130d described in the first embodiment.
  • the pixel PIX (i, j) may further have a switch SW22.
  • the light emitting diode 110 is preferably a micro light emitting diode or a mini light emitting diode.
  • the switch SW21 an example in which a transistor is used as the switch SW21 is shown.
  • the gate of the switch SW21 is electrically connected to the scanning line GL1 (i).
  • One of the source and drain of the switch SW21 is electrically connected to the signal line SL (j), and the other is electrically connected to the gate of the transistor M.
  • the switch SW22 is shown.
  • the gate of the switch SW22 is electrically connected to the scanning line GL2 (i).
  • One of the source and drain of the switch SW22 is electrically connected to the wiring COM, and the other is electrically connected to the gate of the transistor M.
  • the gate of the transistor M is electrically connected to one electrode of the capacitance C1, the other of the source and drain of the switch SW21, and the other of the source and drain of the switch SW22.
  • One of the source and drain of the transistor M is electrically connected to the wiring CATHODE, and the other is electrically connected to the cathode of the light emitting diode 110.
  • the other electrode of capacitance C1 is electrically connected to the wiring Cathode.
  • the anode of the light emitting diode 110 is electrically connected to the wiring ANODE.
  • the scanning line GL1 (i) has a function of supplying a selection signal.
  • the scanning line GL2 (i) has a function of supplying a control signal.
  • the signal line SL (j) has a function of supplying an image signal.
  • a constant potential is supplied to each of the wiring COM, the wiring CATHODE, and the wiring anode.
  • the anode side of the light emitting diode 110 can be set to a high potential, and the cathode side can be set to a lower potential than the anode side.
  • the switch SW21 is controlled by a selection signal and functions as a selection transistor for controlling the selection state of the pixel PIX (i, j).
  • the transistor M functions as a drive transistor that controls the current flowing through the light emitting diode 110 according to the potential supplied to the gate.
  • the switch SW21 is in the conductive state, the image signal supplied to the signal line SL (j) is supplied to the gate of the transistor M, and the emission brightness of the light emitting diode 110 can be controlled according to the potential thereof.
  • the switch SW22 has a function of controlling the gate potential of the transistor M based on the control signal. Specifically, the switch SW22 can supply a potential that causes the transistor M to be in a non-conducting state to the gate of the transistor M.
  • the switch SW22 can be used, for example, to control the pulse width.
  • a current can be supplied from the transistor M to the light emitting diode 110 for a period based on the control signal.
  • the light emitting diode 110 can express gradation based on the image signal and the control signal.
  • a transistor using a metal oxide (oxide semiconductor) to the semiconductor layer on which a channel is formed, respectively, for the transistor included in the pixel PIX (i, j).
  • Transistors using metal oxides with a wider bandgap and lower carrier concentration than silicon can achieve extremely small off-currents. Therefore, due to the small off-current, it is possible to retain the electric charge accumulated in the capacitance connected in series with the transistor for a long period of time. Therefore, it is particularly preferable to use a transistor to which an oxide semiconductor is applied for the switch SW21 and the switch SW22 connected in series with the capacitance C1. Further, by using a transistor to which an oxide semiconductor is applied for other transistors as well, the manufacturing cost can be reduced.
  • a transistor in which silicon is applied to a semiconductor in which a channel is formed can also be used.
  • highly crystalline silicon such as single crystal silicon or polycrystalline silicon because high field effect mobility can be realized and higher speed operation is possible.
  • a transistor to which an oxide semiconductor is applied to one or more is used, and a transistor to which silicon is applied may be used in addition to the transistor.
  • the transistor is shown as an n-channel type transistor in FIG. 13, a p-channel type transistor can also be used.
  • the electronic device of the present embodiment has a display device of one aspect of the present invention in the display unit.
  • the display device of one aspect of the present invention has high display quality and low power consumption. Further, the display device according to one aspect of the present invention can easily be made high in definition and high in resolution. Therefore, it can be used as a display unit of various electronic devices.
  • Electronic devices include, for example, electronic devices with relatively large screens such as television devices, desktop or notebook personal computers, monitors for computers, digital signage, and large game machines such as pachinko machines, as well as digital devices. Examples include cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, mobile information terminals, sound reproduction devices, and the like.
  • the display device of one aspect of the present invention can increase the definition, it can be suitably used for an electronic device having a relatively small display unit.
  • electronic devices include, for example, watch-type or bracelet-type information terminals (wearable devices), VR devices such as head-mounted displays, glasses-type AR devices, MR devices, XR devices, or heads. Examples include wearable devices that can be attached to the device.
  • the display device of one aspect of the present invention includes HD (number of pixels 1280 ⁇ 720), FHD (number of pixels 1920 ⁇ 1080), WQHD (number of pixels 2560 ⁇ 1440), WQXGA (number of pixels 2560 ⁇ 1600), 4K (number of pixels). It is preferable to have an extremely high resolution such as 3840 ⁇ 2160) and 8K (number of pixels 7680 ⁇ 4320). In particular, it is preferable to set the resolution to 4K, 8K, or higher.
  • the pixel density (definition) in the display device of one aspect of the present invention is preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and more preferably 7000 ppi or more. Is even more preferable.
  • a display device having such a high resolution it is possible to further enhance the sense of presence or depth in an electronic device for personal use such as a portable type or a home use.
  • the electronic device of the present embodiment is a sensor (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, voice, time, hardness, electric field, current, voltage. , Including the ability to measure power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays).
  • the electronic device of the present embodiment can have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), wireless communication. It can have a function, a function of reading a program or data recorded on a recording medium, and the like.
  • FIG. 14A shows a perspective view of the glasses-type electronic device 700.
  • the electronic device 700 includes a pair of display panels 701, a pair of housings 702, a pair of optical members 703, a pair of mounting portions 704, a frame 707, a nose pad 708, and the like.
  • the electronic device 700 can project the image displayed on the display panel 701 onto the display area 706 of the optical member 703. Since the optical member 703 has translucency, the user can see the image displayed in the display area 706 by superimposing it on the transmitted image visually recognized through the optical member 703. Therefore, the electronic device 700 is an electronic device capable of AR display.
  • One or both housings 702 may be provided with a camera capable of photographing the front. Further, the housing 702 may have a wireless communication device, and the wireless communication device can supply a video signal or the like to the housing 702. In addition to the wireless communication device or in addition to the wireless communication device, a connector to which a cable to which a video signal or a power supply potential is supplied may be connected may be provided. Further, by equipping the housing 702 with an acceleration sensor such as a gyro sensor, it is possible to detect the orientation of the user's head and display an image corresponding to the orientation in the display area 706.
  • an acceleration sensor such as a gyro sensor
  • a processor may be provided in one or both housings 702.
  • the processor has a function of controlling various components of the electronic device 700, such as a camera, a wireless communication device, and a pair of display panels 701, and a function of generating an image.
  • the processor may have a function of generating a composite image for AR display.
  • the wireless communication device can communicate data with an external device.
  • data transmitted from the outside is output to a processor, and the processor can also generate image data for AR display based on the data.
  • Examples of data transmitted from the outside include image data and data including biometric information transmitted from a biosensor device or the like.
  • a method of projecting an image onto the display area 706 of the electronic device 700 will be described with reference to FIG. 14B.
  • a display panel 701 is provided inside the housing 702. Further, the optical member 703 is provided with a reflector 712, and a reflection surface 713 functioning as a half mirror is provided in a portion of the optical member 703 corresponding to the display area 706.
  • the light 715 emitted from the display panel 701 is reflected by the reflector 712 toward the optical member 703. Inside the optical member 703, the light 715 repeats total internal reflection at the end surface of the optical member 703 and reaches the reflecting surface 713, so that an image is projected on the reflecting surface 713. As a result, the user can visually recognize both the light 715 reflected by the reflecting surface 713 and the transmitted light 716 transmitted through the optical member 703 (including the reflecting surface 713).
  • FIG. 14B shows an example in which the reflector 712 and the reflector 713 each have a curved surface.
  • the degree of freedom in optical design can be increased and the thickness of the optical member 703 can be reduced as compared with the case where these are flat surfaces.
  • the reflector 712 and the reflection surface 713 may be flat.
  • the reflector 712 a member having a mirror surface can be used, and it is preferable that the reflector has a high reflectance. Further, as the reflecting surface 713, a half mirror utilizing the reflection of the metal film may be used, but if a prism or the like utilizing the total reflection is used, the transmittance of the transmitted light 716 can be increased.
  • the housing 702 may have a lens between the display panel 701 and the reflector 712. At this time, it is preferable that the housing 702 has a mechanism for adjusting the distance between the lens and the display panel 701 and their angles. This makes it possible to adjust the focus and enlarge / reduce the image.
  • the lens and the display panel 701 may be configured to be movable in the optical axis direction.
  • the housing 702 has a mechanism capable of adjusting the angle of the reflector 712. By changing the angle of the reflector 712, it is possible to change the position of the display area 706 in which the image is displayed. This makes it possible to arrange the display area 706 at an optimum position according to the position of the user's eyes.
  • the housing 702 is preferably provided with a battery 717 and a wireless power supply module 718.
  • a battery 717 By having the battery 717, it can be used without separately connecting the battery to the electronic device 700, so that the convenience can be enhanced. Further, by having the wireless power supply module 718, it can be charged wirelessly, so that convenience and design can be enhanced. Further, the risk of failure such as contact failure can be reduced and the reliability of the electronic device 700 can be improved as compared with the case of charging by wire with a connector or the like.
  • the housing 702 is provided with a touch sensor module 719.
  • the touch sensor module 719 has a function of detecting that the outer surface of the housing 702 is touched.
  • FIG. 14B shows how the surface of the housing 702 is touched by the finger 720.
  • the touch sensor module 719 can detect a user's tap operation or slide operation and execute various processes. For example, it is possible to execute a process such as pausing and resuming a moving image by a tap operation, and to execute a fast forward and fast rewind process by a slide operation. Further, by providing the touch sensor module 719 in each of the two housings 702, the range of operations can be expanded.
  • various touch sensors can be applied.
  • various methods such as a capacitance method, a resistance film method, an infrared method, an electromagnetic induction method, a surface acoustic wave method, and an optical method can be adopted.
  • a photoelectric conversion device (also referred to as a photoelectric conversion element) can be used as the light receiving device (also referred to as a light receiving element).
  • the photoelectric conversion device include those using an inorganic semiconductor for the active layer, those using an organic semiconductor, and the like.
  • a display device can be applied to the display panel 701. Therefore, it is possible to obtain an electronic device 700 capable of displaying extremely high definition.
  • FIG. 15A shows a perspective view of the glasses-type electronic device 900.
  • the electronic device 900 has a pair of display panels 901, a pair of housings 902, a pair of optical members 903, a pair of mounting portions 904, and the like.
  • the electronic device 900 can project the image displayed on the display panel 901 onto the display area 906 of the optical member 903. Since the optical member 903 has translucency, the user can see the image displayed in the display area 906 by superimposing it on the transmitted image visually recognized through the optical member 903. Therefore, the electronic device 900 is an electronic device capable of AR display.
  • the display panel 901 included in the electronic device 900 preferably has a function of capturing an image in addition to a function of displaying an image.
  • the electronic device 900 can receive the light incident on the display panel 901 via the optical member 903, convert it into an electric signal, and output it.
  • the user's eyes, or the eyes and their surroundings can be imaged and output as image information to an external device or a calculation unit provided in the electronic device 900.
  • One housing 902 is provided with a camera 905 capable of photographing the front. Further, although not shown, one of the housings 902 is provided with a wireless receiver or a connector to which a cable can be connected, and a video signal or the like can be supplied to the housing 902. Further, by arranging an acceleration sensor such as a gyro sensor in the housing 902, it is possible to detect the orientation of the user's head and display an image corresponding to the orientation in the display area 906. Further, it is preferable that the housing 902 is provided with a battery, and it is preferable that the housing 902 can be charged wirelessly or by wire.
  • a method of projecting an image onto the display area 906 of the electronic device 900 will be described with reference to FIG. 15B.
  • a display panel 901, a lens 911, and a reflector 912 are provided inside the housing 902. Further, a portion of the optical member 903 corresponding to the display area 906 has a reflecting surface 913 that functions as a half mirror.
  • the light 915 emitted from the display panel 901 passes through the lens 911 and is reflected by the reflector 912 toward the optical member 903. Inside the optical member 903, the light 915 repeats total internal reflection at the end surface of the optical member 903 and reaches the reflecting surface 913 to project an image on the reflecting surface 913. As a result, the user can visually recognize both the light 915 reflected on the reflecting surface 913 and the transmitted light 916 transmitted through the optical member 903 (including the reflecting surface 913).
  • FIG. 15B shows an example in which the reflector 912 and the reflector 913 each have a curved surface.
  • the degree of freedom in optical design can be increased and the thickness of the optical member 903 can be reduced as compared with the case where these are flat surfaces.
  • the reflector 912 and the reflection surface 913 may be flat.
  • the reflector 912 a member having a mirror surface can be used, and it is preferable that the reflector has a high reflectance. Further, as the reflecting surface 913, a half mirror utilizing the reflection of the metal film may be used, but if a prism or the like utilizing the total reflection is used, the transmittance of the transmitted light 916 can be increased.
  • the electronic device 900 has a mechanism for adjusting one or both of the distance and the angle between the lens 911 and the display panel 901. This makes it possible to adjust the focus and enlarge / reduce the image.
  • one or both of the lens 911 and the display panel 901 may be configured to be movable in the optical axis direction.
  • the electronic device 900 preferably has a mechanism capable of adjusting the angle of the reflector 912. By changing the angle of the reflector 912, it is possible to change the position of the display area 906 in which the image is displayed. This makes it possible to arrange the display area 906 at an optimum position according to the position of the user's eyes.
  • a display device can be applied to the display panel 901. Therefore, it is possible to obtain an electronic device 900 capable of displaying extremely high definition.
  • FIG. 16A and 16B show perspective views of the goggle-type electronic device 950.
  • FIG. 16A is a perspective view showing the front surface, the plane surface, and the left side surface of the electronic device 950
  • FIG. 16B is a perspective view showing the back surface, the bottom surface, and the right side surface of the electronic device 950.
  • the electronic device 950 includes a pair of display panels 951, a housing 952, a pair of mounting portions 954, a cushioning member 955, a pair of lenses 956, and the like.
  • the pair of display panels 951 are provided at positions inside the housing 952 that can be visually recognized through the lens 956.
  • the electronic device 950 is an electronic device for VR.
  • a user wearing the electronic device 950 can visually recognize the image displayed on the display panel 951 through the lens 956. Further, by displaying different images on the pair of display panels 951, it is possible to perform three-dimensional display using parallax.
  • An input terminal 957 and an output terminal 958 are provided on the back side of the housing 952.
  • a cable for supplying a video signal from a video output device or the like or power for charging a battery provided in the housing 952 can be connected to the input terminal 957.
  • the output terminal 958 can function as, for example, an audio output terminal, and can be connected to earphones, headphones, or the like. If the audio data can be output by wireless communication, or if the audio is output from an external video output device, the audio output terminal may not be provided.
  • the electronic device 950 preferably has a mechanism capable of adjusting the left and right positions of the lens 956 and the display panel 951 so as to be optimally positioned according to the position of the user's eyes. Further, it is preferable to have a mechanism for adjusting the focus by changing the distance between the lens 956 and the display panel 951.
  • a display device can be applied to the display panel 951. Therefore, it is possible to obtain an electronic device 950 capable of displaying extremely high definition. This makes the user feel highly immersive.
  • the cushioning member 955 is a portion that comes into contact with the user's face (forehead, cheeks, etc.). When the cushioning member 955 is in close contact with the user's face, light leakage can be prevented and the immersive feeling can be further enhanced. It is preferable to use a soft material for the cushioning member 955 so that the shock absorbing member 955 comes into close contact with the user's face when the user wears the electronic device 950.
  • materials such as rubber, silicone rubber, urethane, and sponge can be used.
  • the cushioning member 955 when a material such as a sponge whose surface is covered with cloth or leather (natural leather or synthetic leather) is used as the cushioning member 955, a gap is less likely to occur between the user's face and the cushioning member 955, and light leakage is preferable. Can be prevented.
  • Members that come into contact with the user's skin, such as the cushioning member 955 and the mounting portion 954, are preferably configured to be removable because they can be easily cleaned and replaced.
  • the electronic device 6500 shown in FIG. 17A is a portable information terminal that can be used as a smartphone.
  • the electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like.
  • the display unit 6502 has a touch panel function.
  • a display device can be applied to the display unit 6502.
  • FIG. 17B is a schematic cross-sectional view including an end portion of the housing 6501 on the microphone 6506 side.
  • a translucent protective member 6510 is provided on the display surface side of the housing 6501, and the display panel 6511, the optical member 6512, the touch sensor panel 6513, and the printed circuit board are provided in the space surrounded by the housing 6501 and the protective member 6510.
  • a substrate 6517, a battery 6518, and the like are arranged.
  • a display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by an adhesive layer (not shown).
  • a part of the display panel 6511 is folded back, and the FPC 6515 is connected to the folded back portion.
  • IC6516 is mounted on FPC6515.
  • the FPC6515 is connected to a terminal provided on the printed circuit board 6517.
  • a flexible display can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. Further, since the display panel 6511 is extremely thin, it is possible to mount a large-capacity battery 6518 while suppressing the thickness of the electronic device. Further, by folding back a part of the display panel 6511 and arranging the connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device having a narrow frame can be realized.
  • FIG. 18A shows an example of a television device.
  • the display unit 7000 is incorporated in the housing 7101.
  • a configuration in which the housing 7101 is supported by the stand 7103 is shown.
  • a display device can be applied to the display unit 7000.
  • the operation of the television device 7100 shown in FIG. 18A can be performed by an operation switch provided in the housing 7101 or a separate remote control operation machine 7111.
  • the display unit 7000 may be provided with a touch sensor, and the television device 7100 may be operated by touching the display unit 7000 with a finger or the like.
  • the remote controller 7111 may have a display unit that displays information output from the remote controller 7111.
  • the channel and volume can be operated by the operation keys or the touch panel included in the remote controller 7111, and the image displayed on the display unit 7000 can be operated.
  • the television device 7100 is configured to include a receiver, a modem, and the like.
  • the receiver can receive general television broadcasts.
  • information communication is performed in one direction (from sender to receiver) or in two directions (between sender and receiver, or between recipients, etc.). It is also possible.
  • FIG. 18B shows an example of a notebook personal computer.
  • the notebook personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like.
  • a display unit 7000 is incorporated in the housing 7211.
  • a display device can be applied to the display unit 7000.
  • 18C and 18D show an example of digital signage.
  • the digital signage 7300 shown in FIG. 18C includes a housing 7301, a display unit 7000, a speaker 7303, and the like. Further, it may have an LED lamp, an operation key (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.
  • FIG. 18D is a digital signage 7400 attached to a columnar pillar 7401.
  • the digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.
  • the display device of one aspect of the present invention can be applied to the display unit 7000.
  • the wider the display unit 7000 the more information can be provided at one time. Further, the wider the display unit 7000 is, the easier it is to be noticed by people, and for example, the advertising effect of the advertisement can be enhanced.
  • the touch panel By applying the touch panel to the display unit 7000, not only the image or moving image can be displayed on the display unit 7000, but also the user can intuitively operate the display unit 7000, which is preferable. Further, when it is used for providing information such as route information or traffic information, usability can be improved by intuitive operation.
  • the digital signage 7300 or the digital signage 7400 can be linked with the information terminal 7311 such as a smartphone or the information terminal 7411 owned by the user by wireless communication.
  • the information of the advertisement displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. Further, by operating the information terminal 7311 or the information terminal 7411, the display of the display unit 7000 can be switched.
  • the digital signage 7300 or the digital signage 7400 can be made to execute a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller). As a result, an unspecified number of users can participate in and enjoy the game at the same time.
  • the electronic devices shown in FIGS. 19A to 19F include a housing 9000, a display unit 9001, a speaker 9003, an operation key 9005 (including a power switch or an operation switch), a connection terminal 9006, and a sensor 9007 (force, displacement, position, speed). , Acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell or infrared (Including the function of), microphone 9008, and the like.
  • the electronic devices shown in FIGS. 19A to 19F have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, etc., a function to control processing by various software (programs), It can have a wireless communication function, a function of reading and processing a program or data recorded on a recording medium, and the like.
  • the functions of electronic devices are not limited to these, and can have various functions.
  • the electronic device may have a plurality of display units.
  • the electronic device even if the electronic device is provided with a camera or the like, it has a function of shooting a still image or a moving image and saving it on a recording medium (external or built in the camera), a function of displaying the shot image on a display unit, and the like. good.
  • FIGS. 19A to 19F Details of the electronic devices shown in FIGS. 19A to 19F will be described below.
  • FIG. 19A is a perspective view showing a mobile information terminal 9101.
  • the mobile information terminal 9101 can be used as, for example, a smartphone.
  • the mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like. Further, the mobile information terminal 9101 can display character or image information on a plurality of surfaces thereof.
  • FIG. 19A shows an example in which three icons 9050 are displayed. Further, the information 9051 indicated by the broken line rectangle can be displayed on another surface of the display unit 9001. Examples of information 9051 include notification of incoming calls such as e-mail, SNS, and telephone, titles such as e-mail or SNS, sender name, date and time, time, remaining battery level, and radio field strength. Alternatively, an icon 9050 or the like may be displayed at the position where the information 9051 is displayed.
  • FIG. 19B is a perspective view showing a mobile information terminal 9102.
  • the mobile information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001.
  • information 9052, information 9053, and information 9054 are displayed on different surfaces.
  • the user can check the information 9053 displayed at a position that can be observed from above the mobile information terminal 9102 with the mobile information terminal 9102 stored in the chest pocket of the clothes.
  • the user can check the display without taking out the mobile information terminal 9102 from the pocket, and can determine, for example, whether or not to receive a call.
  • FIG. 19C is a perspective view showing a wristwatch-type portable information terminal 9200.
  • the mobile information terminal 9200 can be used as, for example, a smart watch.
  • the display unit 9001 is provided with a curved display surface, and can display along the curved display surface.
  • the mobile information terminal 9200 can also make a hands-free call by, for example, intercommunication with a headset capable of wireless communication.
  • the mobile information terminal 9200 can also perform data transmission and charge with other information terminals by means of the connection terminal 9006.
  • the charging operation may be performed by wireless power supply.
  • FIG. 19D to 19F are perspective views showing a foldable mobile information terminal 9201. Further, FIG. 19D is a perspective view of the mobile information terminal 9201 in an unfolded state, FIG. 19F is a folded state, and FIG. 19E is a perspective view of a state in which one of FIGS. 19D and 19F is in the process of changing to the other.
  • the mobile information terminal 9201 is excellent in portability in the folded state, and is excellent in display listability due to a wide seamless display area in the unfolded state.
  • the display unit 9001 included in the personal digital assistant terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Led Device Packages (AREA)
PCT/IB2021/050762 2020-02-14 2021-02-01 表示装置および電子機器 Ceased WO2021161126A1 (ja)

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US17/760,204 US20230060303A1 (en) 2020-02-14 2021-02-01 Display apparatus and electronic device
JP2021577709A JP7637078B2 (ja) 2020-02-14 2021-02-01 表示装置および電子機器
KR1020227027815A KR20220138858A (ko) 2020-02-14 2021-02-01 표시 장치 및 전자 기기
CN202180014228.4A CN115088029A (zh) 2020-02-14 2021-02-01 显示装置以及电子设备
JP2025022227A JP2025075042A (ja) 2020-02-14 2025-02-14 表示装置および電子機器

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114695391A (zh) * 2022-03-21 2022-07-01 广州华星光电半导体显示技术有限公司 阵列基板及其制备方法、显示面板
WO2023247927A1 (en) * 2022-06-20 2023-12-28 Smartkem Limited An integrated circuit for a flat-panel display

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115442991A (zh) * 2021-06-04 2022-12-06 群创光电股份有限公司 电子装置
CN116960244A (zh) * 2023-09-20 2023-10-27 昆山麦沄显示技术有限公司 一种集成式led芯片结构及制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019176326A1 (ja) * 2018-03-16 2019-09-19 株式会社ブイ・テクノロジー Ｌｅｄ・トランジスタ複合素子
KR102030323B1 (ko) * 2018-11-23 2019-10-10 엘지디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
US20190355874A1 (en) * 2018-05-20 2019-11-21 Black Peak LLC High brightness light emitting device with small size
WO2019220278A1 (ja) * 2018-05-17 2019-11-21 株式会社半導体エネルギー研究所 表示装置、及び電子機器
WO2019230260A1 (ja) * 2018-05-31 2019-12-05 株式会社ジャパンディスプレイ 表示装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911772B2 (en) * 2002-06-12 2005-06-28 Eastman Kodak Company Oled display having color filters for improving contrast
TWI295144B (en) * 2005-06-10 2008-03-21 Au Optronics Corp Dual emitting device
JP4291837B2 (ja) 2006-08-30 2009-07-08 株式会社沖データ 投写型表示装置および画像形成装置
JP5511157B2 (ja) * 2008-07-03 2014-06-04 キヤノン株式会社 発光表示装置
KR101048965B1 (ko) * 2009-01-22 2011-07-12 삼성모바일디스플레이주식회사 유기 전계발광 표시장치
TW201324760A (zh) * 2011-12-07 2013-06-16 Chunghwa Picture Tubes Ltd 畫素結構及其製造方法
US8987765B2 (en) 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
JP2015197994A (ja) * 2014-04-01 2015-11-09 セイコーエプソン株式会社 発光装置の製造方法、発光装置、及び電子機器
KR102331396B1 (ko) * 2014-06-13 2021-11-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR102448095B1 (ko) * 2017-09-08 2022-09-29 삼성디스플레이 주식회사 표시 장치, 표시 장치 제조 방법, 및 전극 형성 방법
CN111615653A (zh) * 2018-01-23 2020-09-01 东丽株式会社 发光元件、显示器及颜色转换基板
EP3750190B1 (en) * 2018-02-09 2025-04-23 Boe Technology Group Co., Ltd. Organic light emitting diode display panel, organic light emitting diode counter substrate, and fabricating method thereof
WO2019203405A1 (ko) * 2018-04-19 2019-10-24 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
US12225761B2 (en) * 2018-05-11 2025-02-11 Semiconductor Energy Laboratory Co., Ltd. Display device and fabrication method thereof
WO2020008294A1 (ja) * 2018-07-06 2020-01-09 株式会社半導体エネルギー研究所 金属酸窒化物膜の作製方法
CN109300931B (zh) * 2018-09-30 2021-02-26 上海天马微电子有限公司 一种Micro LED显示面板及制作方法、显示装置
US11688825B2 (en) * 2019-01-31 2023-06-27 Industrial Technology Research Institute Composite substrate and light-emitting diode
CN109979981B (zh) * 2019-03-29 2021-05-14 上海天马微电子有限公司 一种显示面板及其制作方法、显示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019176326A1 (ja) * 2018-03-16 2019-09-19 株式会社ブイ・テクノロジー Ｌｅｄ・トランジスタ複合素子
WO2019220278A1 (ja) * 2018-05-17 2019-11-21 株式会社半導体エネルギー研究所 表示装置、及び電子機器
US20190355874A1 (en) * 2018-05-20 2019-11-21 Black Peak LLC High brightness light emitting device with small size
WO2019230260A1 (ja) * 2018-05-31 2019-12-05 株式会社ジャパンディスプレイ 表示装置
KR102030323B1 (ko) * 2018-11-23 2019-10-10 엘지디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114695391A (zh) * 2022-03-21 2022-07-01 广州华星光电半导体显示技术有限公司 阵列基板及其制备方法、显示面板
WO2023247927A1 (en) * 2022-06-20 2023-12-28 Smartkem Limited An integrated circuit for a flat-panel display

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JP2025075042A (ja) 2025-05-14
US20230060303A1 (en) 2023-03-02

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