JP7637078B2 - 表示装置および電子機器 - Google Patents

表示装置および電子機器 Download PDF

Info

Publication number
JP7637078B2
JP7637078B2 JP2021577709A JP2021577709A JP7637078B2 JP 7637078 B2 JP7637078 B2 JP 7637078B2 JP 2021577709 A JP2021577709 A JP 2021577709A JP 2021577709 A JP2021577709 A JP 2021577709A JP 7637078 B2 JP7637078 B2 JP 7637078B2
Authority
JP
Japan
Prior art keywords
layer
transistor
oxide
insulator
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021577709A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021161126A1 (https=
JPWO2021161126A5 (https=
Inventor
舜平 山崎
紘慈 楠
直人 楠本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JPWO2021161126A1 publication Critical patent/JPWO2021161126A1/ja
Publication of JPWO2021161126A5 publication Critical patent/JPWO2021161126A5/ja
Priority to JP2025022227A priority Critical patent/JP2025075042A/ja
Application granted granted Critical
Publication of JP7637078B2 publication Critical patent/JP7637078B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7424—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self-supporting substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7426—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/743—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Led Device Packages (AREA)
JP2021577709A 2020-02-14 2021-02-01 表示装置および電子機器 Active JP7637078B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025022227A JP2025075042A (ja) 2020-02-14 2025-02-14 表示装置および電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020023149 2020-02-14
JP2020023149 2020-02-14
PCT/IB2021/050762 WO2021161126A1 (ja) 2020-02-14 2021-02-01 表示装置および電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025022227A Division JP2025075042A (ja) 2020-02-14 2025-02-14 表示装置および電子機器

Publications (3)

Publication Number Publication Date
JPWO2021161126A1 JPWO2021161126A1 (https=) 2021-08-19
JPWO2021161126A5 JPWO2021161126A5 (https=) 2024-02-05
JP7637078B2 true JP7637078B2 (ja) 2025-02-27

Family

ID=77291411

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021577709A Active JP7637078B2 (ja) 2020-02-14 2021-02-01 表示装置および電子機器
JP2025022227A Pending JP2025075042A (ja) 2020-02-14 2025-02-14 表示装置および電子機器

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025022227A Pending JP2025075042A (ja) 2020-02-14 2025-02-14 表示装置および電子機器

Country Status (5)

Country Link
US (1) US20230060303A1 (https=)
JP (2) JP7637078B2 (https=)
KR (1) KR20220138858A (https=)
CN (1) CN115088029A (https=)
WO (1) WO2021161126A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115442991A (zh) * 2021-06-04 2022-12-06 群创光电股份有限公司 电子装置
CN114695391A (zh) * 2022-03-21 2022-07-01 广州华星光电半导体显示技术有限公司 阵列基板及其制备方法、显示面板
GB202209042D0 (en) * 2022-06-20 2022-08-10 Smartkem Ltd An integrated circuit for a flat-panel display
CN116960244A (zh) * 2023-09-20 2023-10-27 昆山麦沄显示技术有限公司 一种集成式led芯片结构及制作方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130146931A1 (en) 2011-12-07 2013-06-13 Chunghwa Picture Tubes, Ltd. Pixel structure and manufacturing method of the same
WO2019176326A1 (ja) 2018-03-16 2019-09-19 株式会社ブイ・テクノロジー Ｌｅｄ・トランジスタ複合素子
KR102030323B1 (ko) 2018-11-23 2019-10-10 엘지디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
US20190355874A1 (en) 2018-05-20 2019-11-21 Black Peak LLC High brightness light emitting device with small size
WO2019220278A1 (ja) 2018-05-17 2019-11-21 株式会社半導体エネルギー研究所 表示装置、及び電子機器
WO2019230260A1 (ja) 2018-05-31 2019-12-05 株式会社ジャパンディスプレイ 表示装置
WO2020008294A1 (ja) 2018-07-06 2020-01-09 株式会社半導体エネルギー研究所 金属酸窒化物膜の作製方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911772B2 (en) * 2002-06-12 2005-06-28 Eastman Kodak Company Oled display having color filters for improving contrast
TWI295144B (en) * 2005-06-10 2008-03-21 Au Optronics Corp Dual emitting device
JP4291837B2 (ja) 2006-08-30 2009-07-08 株式会社沖データ 投写型表示装置および画像形成装置
JP5511157B2 (ja) * 2008-07-03 2014-06-04 キヤノン株式会社 発光表示装置
KR101048965B1 (ko) * 2009-01-22 2011-07-12 삼성모바일디스플레이주식회사 유기 전계발광 표시장치
US8987765B2 (en) 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
JP2015197994A (ja) * 2014-04-01 2015-11-09 セイコーエプソン株式会社 発光装置の製造方法、発光装置、及び電子機器
KR102331396B1 (ko) * 2014-06-13 2021-11-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR102448095B1 (ko) * 2017-09-08 2022-09-29 삼성디스플레이 주식회사 표시 장치, 표시 장치 제조 방법, 및 전극 형성 방법
CN111615653A (zh) * 2018-01-23 2020-09-01 东丽株式会社 发光元件、显示器及颜色转换基板
EP3750190B1 (en) * 2018-02-09 2025-04-23 Boe Technology Group Co., Ltd. Organic light emitting diode display panel, organic light emitting diode counter substrate, and fabricating method thereof
WO2019203405A1 (ko) * 2018-04-19 2019-10-24 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
US12225761B2 (en) * 2018-05-11 2025-02-11 Semiconductor Energy Laboratory Co., Ltd. Display device and fabrication method thereof
CN109300931B (zh) * 2018-09-30 2021-02-26 上海天马微电子有限公司 一种Micro LED显示面板及制作方法、显示装置
US11688825B2 (en) * 2019-01-31 2023-06-27 Industrial Technology Research Institute Composite substrate and light-emitting diode
CN109979981B (zh) * 2019-03-29 2021-05-14 上海天马微电子有限公司 一种显示面板及其制作方法、显示装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130146931A1 (en) 2011-12-07 2013-06-13 Chunghwa Picture Tubes, Ltd. Pixel structure and manufacturing method of the same
WO2019176326A1 (ja) 2018-03-16 2019-09-19 株式会社ブイ・テクノロジー Ｌｅｄ・トランジスタ複合素子
WO2019220278A1 (ja) 2018-05-17 2019-11-21 株式会社半導体エネルギー研究所 表示装置、及び電子機器
US20190355874A1 (en) 2018-05-20 2019-11-21 Black Peak LLC High brightness light emitting device with small size
WO2019230260A1 (ja) 2018-05-31 2019-12-05 株式会社ジャパンディスプレイ 表示装置
WO2020008294A1 (ja) 2018-07-06 2020-01-09 株式会社半導体エネルギー研究所 金属酸窒化物膜の作製方法
KR102030323B1 (ko) 2018-11-23 2019-10-10 엘지디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법

Also Published As

Publication number Publication date
JPWO2021161126A1 (https=) 2021-08-19
WO2021161126A1 (ja) 2021-08-19
TW202209663A (zh) 2022-03-01
KR20220138858A (ko) 2022-10-13
CN115088029A (zh) 2022-09-20
JP2025075042A (ja) 2025-05-14
US20230060303A1 (en) 2023-03-02

Similar Documents

Publication Publication Date Title
JP7534190B2 (ja) 表示装置の作製方法
JP7679531B2 (ja) 表示装置
US12334480B2 (en) Display device, display module, and electronic device
JP7637078B2 (ja) 表示装置および電子機器
JP7609800B2 (ja) 表示装置の作製方法
TWI914329B (zh) 顯示裝置以及電子裝置
WO2022137015A1 (ja) 表示装置、表示モジュール、及び、電子機器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240126

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240126

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240917

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20241115

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250114

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250121

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250214

R150 Certificate of patent or registration of utility model

Ref document number: 7637078

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150