WO2021157396A1 - 半導体レーザ装置 - Google Patents

半導体レーザ装置 Download PDF

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Publication number
WO2021157396A1
WO2021157396A1 PCT/JP2021/002329 JP2021002329W WO2021157396A1 WO 2021157396 A1 WO2021157396 A1 WO 2021157396A1 JP 2021002329 W JP2021002329 W JP 2021002329W WO 2021157396 A1 WO2021157396 A1 WO 2021157396A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor laser
holding member
lens
light
emitted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/002329
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
秀雄 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Priority to US17/796,163 priority Critical patent/US20230110167A1/en
Priority to JP2021575727A priority patent/JPWO2021157396A1/ja
Priority to CN202180011715.5A priority patent/CN115053417A/zh
Priority to DE112021000855.2T priority patent/DE112021000855T5/de
Publication of WO2021157396A1 publication Critical patent/WO2021157396A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/143—Littman-Metcalf configuration, e.g. laser - grating - mirror
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers

Definitions

  • Patent Document 1 there is a semiconductor laser device including a semiconductor laser element that emits laser light and an optical member such as a lens that controls the light distribution of the laser light (see, for example, Patent Document 1 and Patent Document 2).
  • the X-axis, Y-axis, and Z-axis indicate the three axes of the three-dimensional Cartesian coordinate system.
  • the Z-axis direction is the vertical direction
  • the direction perpendicular to the Z-axis is the horizontal direction.
  • the "top view” is when the mounting surface side is viewed from the normal direction of the mounting surface (main surface) of the base on which the light source is mounted. To say.
  • the semiconductor laser element 110 By emitting the emitted light 300 to the semiconductor laser element 110, the semiconductor laser element 110 generates heat. Due to this heat generation, the upper base 121 undergoes thermal expansion and is displaced (changed) in the Z-axis direction.
  • the holding member 280 can hold the lens 130 from the gravity direction side applied to the lens 130 as compared with the case where the lens 130 is held on the upper surface or the side surface of the lens 130. Therefore, the lens 130 can be held more stably while maintaining the relative positional relationship between the semiconductor laser element 110 and the lens 130.
  • the position and posture of the lens 130 can be adjusted to an appropriate state, and the position and posture of the lens 130 can be fixed.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
PCT/JP2021/002329 2020-02-03 2021-01-22 半導体レーザ装置 Ceased WO2021157396A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US17/796,163 US20230110167A1 (en) 2020-02-03 2021-01-22 Semiconductor laser device
JP2021575727A JPWO2021157396A1 (https=) 2020-02-03 2021-01-22
CN202180011715.5A CN115053417A (zh) 2020-02-03 2021-01-22 半导体激光装置
DE112021000855.2T DE112021000855T5 (de) 2020-02-03 2021-01-22 Halbleiter-Laservorrichtung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-016225 2020-02-03
JP2020016225 2020-02-03

Publications (1)

Publication Number Publication Date
WO2021157396A1 true WO2021157396A1 (ja) 2021-08-12

Family

ID=77200470

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2021/002329 Ceased WO2021157396A1 (ja) 2020-02-03 2021-01-22 半導体レーザ装置

Country Status (5)

Country Link
US (1) US20230110167A1 (https=)
JP (1) JPWO2021157396A1 (https=)
CN (1) CN115053417A (https=)
DE (1) DE112021000855T5 (https=)
WO (1) WO2021157396A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7659183B2 (ja) * 2021-06-25 2025-04-09 日亜化学工業株式会社 レーザ光源

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5420722A (en) * 1993-10-25 1995-05-30 Creo Products Inc. Self-registering microlens for laser diodes
JPH09269439A (ja) * 1996-03-29 1997-10-14 Nec Corp 半導体レーザモジュール
JP2004200634A (ja) * 2002-12-13 2004-07-15 Hentze-Lissotschenko Patentverwaltungs Gmbh & Co Kg 半導体レーザ装置、および半導体レーザ装置のための半導体レーザモジュール、ならびに半導体レーザ装置を製造するための方法
US20130084039A1 (en) * 2011-08-16 2013-04-04 International Business Machines Corporation Lens array optical coupling to photonic chip
WO2019009086A1 (ja) * 2017-07-07 2019-01-10 パナソニックＩｐマネジメント株式会社 半導体レーザ装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68920011T2 (de) * 1988-03-22 1995-06-01 Fujitsu Ltd Optische halbleiteranordung und deren herstellung.
US6078437A (en) * 1998-09-28 2000-06-20 Blue Sky Research Micro-optic lens with integral alignment member
EP1006382B1 (de) 1998-10-30 2002-09-18 Lissotschenko, Vitalij Anordnung und Vorrichtung zur optischen Strahltransformation
JP2002232064A (ja) * 2001-02-05 2002-08-16 Hamamatsu Photonics Kk 半導体レーザ装置、及び、半導体レーザ装置のレンズ位置固定方法
JP6964469B2 (ja) * 2017-08-30 2021-11-10 シャープ株式会社 光源装置およびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5420722A (en) * 1993-10-25 1995-05-30 Creo Products Inc. Self-registering microlens for laser diodes
JPH09269439A (ja) * 1996-03-29 1997-10-14 Nec Corp 半導体レーザモジュール
JP2004200634A (ja) * 2002-12-13 2004-07-15 Hentze-Lissotschenko Patentverwaltungs Gmbh & Co Kg 半導体レーザ装置、および半導体レーザ装置のための半導体レーザモジュール、ならびに半導体レーザ装置を製造するための方法
US20130084039A1 (en) * 2011-08-16 2013-04-04 International Business Machines Corporation Lens array optical coupling to photonic chip
WO2019009086A1 (ja) * 2017-07-07 2019-01-10 パナソニックＩｐマネジメント株式会社 半導体レーザ装置

Also Published As

Publication number Publication date
CN115053417A (zh) 2022-09-13
US20230110167A1 (en) 2023-04-13
DE112021000855T5 (de) 2022-12-08
JPWO2021157396A1 (https=) 2021-08-12

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