CN115053417A - 半导体激光装置 - Google Patents

半导体激光装置 Download PDF

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Publication number
CN115053417A
CN115053417A CN202180011715.5A CN202180011715A CN115053417A CN 115053417 A CN115053417 A CN 115053417A CN 202180011715 A CN202180011715 A CN 202180011715A CN 115053417 A CN115053417 A CN 115053417A
Authority
CN
China
Prior art keywords
semiconductor laser
holding member
lens
light
laser element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180011715.5A
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English (en)
Chinese (zh)
Inventor
山口秀雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Panasonic Holdings Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Holdings Corp filed Critical Panasonic Holdings Corp
Publication of CN115053417A publication Critical patent/CN115053417A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/143—Littman-Metcalf configuration, e.g. laser - grating - mirror
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CN202180011715.5A 2020-02-03 2021-01-22 半导体激光装置 Pending CN115053417A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-016225 2020-02-03
JP2020016225 2020-02-03
PCT/JP2021/002329 WO2021157396A1 (ja) 2020-02-03 2021-01-22 半導体レーザ装置

Publications (1)

Publication Number Publication Date
CN115053417A true CN115053417A (zh) 2022-09-13

Family

ID=77200470

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180011715.5A Pending CN115053417A (zh) 2020-02-03 2021-01-22 半导体激光装置

Country Status (5)

Country Link
US (1) US20230110167A1 (https=)
JP (1) JPWO2021157396A1 (https=)
CN (1) CN115053417A (https=)
DE (1) DE112021000855T5 (https=)
WO (1) WO2021157396A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7659183B2 (ja) * 2021-06-25 2025-04-09 日亜化学工業株式会社 レーザ光源

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5420722A (en) * 1993-10-25 1995-05-30 Creo Products Inc. Self-registering microlens for laser diodes
JP2002232064A (ja) * 2001-02-05 2002-08-16 Hamamatsu Photonics Kk 半導体レーザ装置、及び、半導体レーザ装置のレンズ位置固定方法
JP2004200634A (ja) * 2002-12-13 2004-07-15 Hentze-Lissotschenko Patentverwaltungs Gmbh & Co Kg 半導体レーザ装置、および半導体レーザ装置のための半導体レーザモジュール、ならびに半導体レーザ装置を製造するための方法
CN103890625A (zh) * 2011-08-16 2014-06-25 国际商业机器公司 透镜阵列与光子芯片的光学耦合
WO2019009086A1 (ja) * 2017-07-07 2019-01-10 パナソニックＩｐマネジメント株式会社 半導体レーザ装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68920011T2 (de) * 1988-03-22 1995-06-01 Fujitsu Ltd Optische halbleiteranordung und deren herstellung.
JP2828025B2 (ja) * 1996-03-29 1998-11-25 日本電気株式会社 半導体レーザモジュール
US6078437A (en) * 1998-09-28 2000-06-20 Blue Sky Research Micro-optic lens with integral alignment member
EP1006382B1 (de) 1998-10-30 2002-09-18 Lissotschenko, Vitalij Anordnung und Vorrichtung zur optischen Strahltransformation
JP6964469B2 (ja) * 2017-08-30 2021-11-10 シャープ株式会社 光源装置およびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5420722A (en) * 1993-10-25 1995-05-30 Creo Products Inc. Self-registering microlens for laser diodes
JP2002232064A (ja) * 2001-02-05 2002-08-16 Hamamatsu Photonics Kk 半導体レーザ装置、及び、半導体レーザ装置のレンズ位置固定方法
JP2004200634A (ja) * 2002-12-13 2004-07-15 Hentze-Lissotschenko Patentverwaltungs Gmbh & Co Kg 半導体レーザ装置、および半導体レーザ装置のための半導体レーザモジュール、ならびに半導体レーザ装置を製造するための方法
CN103890625A (zh) * 2011-08-16 2014-06-25 国际商业机器公司 透镜阵列与光子芯片的光学耦合
WO2019009086A1 (ja) * 2017-07-07 2019-01-10 パナソニックＩｐマネジメント株式会社 半導体レーザ装置

Also Published As

Publication number Publication date
WO2021157396A1 (ja) 2021-08-12
US20230110167A1 (en) 2023-04-13
DE112021000855T5 (de) 2022-12-08
JPWO2021157396A1 (https=) 2021-08-12

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Application publication date: 20220913