WO2021153033A1 - Procédé de traitement de substrat et dispositif de traitement de substrat - Google Patents

Procédé de traitement de substrat et dispositif de traitement de substrat Download PDF

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Publication number
WO2021153033A1
WO2021153033A1 PCT/JP2020/046230 JP2020046230W WO2021153033A1 WO 2021153033 A1 WO2021153033 A1 WO 2021153033A1 JP 2020046230 W JP2020046230 W JP 2020046230W WO 2021153033 A1 WO2021153033 A1 WO 2021153033A1
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Prior art keywords
liquid
substrate
unit
discharge
substrate processing
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PCT/JP2020/046230
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English (en)
Japanese (ja)
Inventor
克栄 東
尚樹 澤崎
雄二 菅原
宏樹 温井
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Priority to KR1020227025948A priority Critical patent/KR102616007B1/ko
Priority to CN202080095099.1A priority patent/CN115023793A/zh
Publication of WO2021153033A1 publication Critical patent/WO2021153033A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Definitions

  • the present invention relates to a substrate processing method and a substrate processing apparatus for processing a substrate.
  • the substrates include, for example, semiconductor wafers, liquid crystal display substrates, organic EL (Electroluminescence) substrates, FPD (Flat Panel Display) substrates, optical display substrates, magnetic disk substrates, optical disk substrates, magneto-optical disk substrates, etc.
  • an inert gas is emitted from a member (also referred to as an atmosphere control member) such as a blocking plate or a gas nozzle arranged so as to face the upper surface of the substrate held by the spin chuck.
  • a member also referred to as an atmosphere control member
  • the substrate is processed while controlling the atmosphere of the space along the upper surface of the substrate by discharging the gas toward the upper surface of the substrate (see, for example, Patent Documents 1 to 3 and the like).
  • the position of the treatment liquid on the upper surface of the substrate is set between the central portion and the peripheral portion while the substrate held by the spin chuck is rotating.
  • the nozzle for discharging the processing liquid also referred to as the processing liquid discharge nozzle
  • the processing liquid discharge nozzle may be swung so as to scan (see, for example, Patent Documents 1 to 3 and the like).
  • JP-A-2018-157061 Japanese Unexamined Patent Publication No. 2014-197571 JP-A-2017-69346
  • the treatment on the upper surface of the substrate is easily affected by the oxygen concentration or the humidity in the space along the upper surface of the substrate, but it may be desired to further reduce the variation in the treatment on the upper surface of the substrate. be. That is, there are cases where it is desired to achieve both control of the atmosphere on the upper surface of the substrate and scanning of the liquid landing position on the upper surface of the substrate.
  • the processing liquid discharge nozzle swings to scan the landing position of the processing liquid on the substrate. It may not be possible to carry out over a wide range of the upper surface, and it may not be possible to sufficiently reduce the variation in processing with respect to the upper surface of the substrate.
  • the atmosphere control member is separated from the upper surface of the substrate in order to scan the liquid landing position in a wide range on the upper surface of the substrate, the control of the atmosphere on the upper surface of the substrate becomes insufficient, and the quality of the substrate processing is improved. It can lead to a decline. Further, for example, when the treatment liquid is discharged from the treatment liquid discharge nozzle toward the upper surface of the substrate in the direction of gravity, the treatment liquid splashes on the upper surface of the substrate, the treatment liquid discharge nozzle and the atmosphere control member are contaminated, and the substrate is contaminated. The quality of processing may be reduced.
  • the present invention has been made in view of the above problems, and provides a substrate processing method and a substrate processing apparatus capable of simultaneously realizing atmosphere control on the upper surface of a substrate and reduction of variations in processing on the upper surface of the substrate.
  • the purpose is.
  • the substrate processing method includes a holding step and a processing step.
  • the holding step the substrate is held by the holding portion in a horizontal posture.
  • the processing step the holding portion is pressed while supplying an inert gas onto the upper surface from an atmosphere control member located so as to face the upper surface of the substrate held in the holding portion in a horizontal posture.
  • the treatment liquid is supplied onto the upper surface by discharging the treatment liquid from the discharge port of the liquid discharge unit in the direction along the upper surface while rotating around a virtual rotation axis along the vertical direction. ..
  • the supply amount of the treatment liquid from the supply source of the treatment liquid to the liquid discharge portion per unit time is changed to reduce the discharge speed of the treatment liquid discharged from the liquid discharge portion.
  • the liquid supply position where the processing liquid discharged from the liquid discharge portion on the upper surface is supplied is changed.
  • the substrate processing method according to the second aspect is the substrate processing method according to the first aspect, and the liquid is more than when the liquid supply position is in the central region of the upper surface in the processing step.
  • the amount of the processing liquid supplied from the supply source to the liquid discharge portion per unit time is set so that the discharge speed becomes smaller when the supply position is in the end side region of the upper surface. Decrease.
  • the substrate processing method according to the third aspect is the substrate processing method according to the second aspect, and in the processing step, the amount of the processing liquid supplied from the supply source to the liquid discharge unit per unit time is determined. By increasing or decreasing, the liquid supply position is reciprocated a plurality of times between the central region and the end side region.
  • the substrate processing method according to the fourth aspect is the substrate processing method according to any one of the first to third aspects, and in the processing step, the processing liquid discharged from the liquid discharge unit is the said.
  • the liquid is landed on the upper surface through the space between the upper surface and the atmosphere control member.
  • the substrate processing method according to the fifth aspect is the substrate processing method according to any one of the first to fourth aspects, and in the processing step, the discharge port is higher than the upper surface in the vertical direction. It is arranged at a position and is arranged at a position lower than the lower surface of the atmosphere control member.
  • the substrate processing method according to the sixth aspect is the substrate processing method according to the fifth aspect, wherein in the processing step, the height of the discharge port in the vertical direction with respect to the upper surface is H, and the virtual Let R be the horizontal distance between the rotation axis and the discharge port, and let ⁇ be the angle formed by the virtual horizontal plane passing through the discharge port and the discharge direction in which the discharge port discharges the treatment liquid.
  • the angle ⁇ shows a positive value when the direction is downward from the horizontal direction
  • the angle ⁇ shows a negative value when the discharge direction is upward from the horizontal direction.
  • the relationship of 0 ⁇ ⁇ ⁇ tan -1 (H / R) is satisfied.
  • the substrate processing method according to the seventh aspect is the substrate processing method according to any one of the first to sixth aspects, in which the atmosphere control member covers the upper surface in the processing step. It is located and supplies an inert gas between the top surface and the atmosphere control member.
  • the substrate processing method according to the eighth aspect is the substrate processing method according to any one of the first to sixth aspects, and in the processing step, the atmosphere control member is placed in the central region of the upper surface. It is located facing each other and supplies an inert gas above the substrate to form an airflow flowing along the top surface.
  • the substrate processing apparatus includes a holding unit, a first driving unit, an atmosphere control member, a liquid discharging unit, a liquid supply path, a changing unit, and a control unit.
  • the holding portion holds the substrate in a horizontal posture.
  • the first drive unit rotates the holding unit around a virtual rotation axis along the vertical direction.
  • the atmosphere control member supplies an inert gas onto the upper surface of the substrate while being held in a horizontal position on the holding portion so as to face the upper surface of the substrate.
  • the liquid discharge unit supplies the treatment liquid onto the upper surface by discharging the treatment liquid from the discharge port in a direction along the upper surface of the substrate held in the holding portion in a horizontal posture.
  • the liquid supply path connects the supply source of the treatment liquid and the liquid discharge portion.
  • the change unit is located in the middle of the liquid supply path, and changes the amount of the processing liquid supplied from the supply source to the liquid discharge unit per unit time.
  • the control unit causes the changing unit to change the amount of the processing liquid supplied from the supply source to the liquid discharging unit per unit time, thereby reducing the discharge speed of the processing liquid discharged from the liquid discharging unit. It is changed to change the liquid supply position where the processing liquid discharged from the liquid discharge portion on the upper surface is supplied.
  • the substrate processing apparatus is the substrate processing apparatus according to the ninth aspect, and the control unit has the liquid more than when the liquid supply position is in the central region of the upper surface. Per unit time of the processing liquid from the supply source to the liquid discharge part by the change part so that the discharge rate becomes smaller when the supply position is in the end side region of the upper surface. Reduce the supply of
  • the substrate processing apparatus is the substrate processing apparatus according to the tenth aspect, and the control unit is per unit time of the processing liquid from the supply source to the liquid discharge unit by the change unit. By increasing or decreasing the supply amount of the liquid, the liquid supply position is reciprocated a plurality of times between the central region and the end side region.
  • the substrate processing apparatus is the substrate processing apparatus according to any one of the ninth to eleventh aspects, and in the liquid discharge unit, the processing liquid is the upper surface and the atmosphere control member.
  • the treatment liquid is discharged so as to land on the upper surface through the space between them.
  • the substrate processing apparatus is the substrate processing apparatus according to any one of the ninth to twelfth aspects, and the discharge port is higher than the upper surface in the vertical direction and the atmosphere control member.
  • the treatment liquid is discharged in a direction along the upper surface in a state of being arranged at a position lower than the lower surface.
  • the substrate processing apparatus is the substrate processing apparatus according to the thirteenth aspect, and when the liquid discharge unit supplies the processing liquid to the upper surface, the discharge port with reference to the upper surface.
  • the height in the vertical direction is H
  • the horizontal distance between the virtual rotation axis and the discharge port is R
  • the virtual horizontal plane passing through the discharge port and the discharge port discharge the treatment liquid.
  • the angle formed by the discharge direction is ⁇ , and when the discharge direction is downward from the horizontal direction, the angle ⁇ shows a positive value and the discharge direction is upward from the horizontal direction.
  • the angle ⁇ shows a negative value
  • the relationship of 0 ⁇ ⁇ ⁇ tan -1 (H / R) is satisfied.
  • the substrate processing apparatus is the substrate processing apparatus according to any one of the ninth to fourteenth aspects, and the atmosphere control member covers the upper surface and the upper surface and the upper surface. Includes a blocking plate, which supplies an inert gas to and from the atmosphere control member.
  • the substrate processing apparatus is the substrate processing apparatus according to any one of the ninth to fourteenth aspects, and the atmosphere control member faces the central region of the upper surface. By supplying the inert gas above the substrate, an air flow flowing along the upper surface is formed.
  • the substrate processing apparatus is the substrate processing apparatus according to any one of the ninth to sixteenth aspects, in which a guard portion surrounding the holding portion and the guard portion are provided along the vertical direction.
  • the control unit raises and lowers the guard unit by the second drive unit, and the liquid discharge unit extends along the horizontal direction and discharges to the tip.
  • the substrate processing apparatus is the substrate processing apparatus according to the seventeenth aspect, and includes a third drive unit that raises and lowers the liquid discharge unit along the vertical direction, and the guard unit includes a third drive unit.
  • the control unit When viewed in a plane downward, the control unit has an inner peripheral edge portion having a recess recessed in a direction away from the atmosphere control member, and the control unit lowers the liquid discharge unit by the third drive unit.
  • the second tubular portion is inserted into the space inside the recess, and the liquid discharge portion is raised by the third drive unit to move the second tubular portion upward from the space inside the recess. Perform at least one of the ascending movements.
  • the substrate processing apparatus is the substrate processing apparatus according to any one of the ninth to sixteenth aspects, wherein a guard portion surrounding the holding portion and the guard portion are provided along the vertical direction.
  • a second drive unit for raising and lowering the liquid discharge unit and a third drive unit for moving the liquid discharge unit up and down along the vertical direction are provided, and the liquid discharge unit is a tubular tip portion extending along the vertical direction.
  • the tip portion has the discharge port that is open in the horizontal direction, and the control unit raises and lowers the guard unit by the second drive unit to control the guard unit and the atmosphere.
  • the liquid discharge unit is moved up and down by the third drive unit so that the tip portion is inserted and removed from the gap with the member.
  • the substrate processing apparatus is the substrate processing apparatus according to any one of the ninth to sixteenth aspects, and the guard portion surrounding the periphery of the holding portion and the guard portion along the vertical direction.
  • the control unit includes a second drive unit that raises and lowers the guard unit, and the control unit raises and lowers the guard unit by the second drive unit, and the liquid discharge unit is integrally configured with the guard unit.
  • the liquid supply position of the processing liquid over a wide range on the upper surface of the substrate is not shaken. You can scan. Thereby, for example, it is possible to simultaneously realize the atmosphere control on the upper surface of the substrate and the reduction of the variation in the processing on the upper surface of the substrate.
  • the speed and supply amount of the treatment liquid decrease. Therefore, for example, the liquid splashing of the processing liquid on the chuck pin holding the outer edge portion of the substrate in the holding portion is unlikely to occur.
  • the substrate processing method for example, by scanning the liquid supply position of the processing liquid a plurality of times over a wide area on the upper surface of the substrate, it is possible to further reduce the variation in processing with respect to the upper surface of the substrate. ..
  • the atmosphere on the upper surface of the substrate is controlled more strictly, and the liquid discharge portion. It is possible to scan the liquid supply position of the processing liquid over a wide range on the upper surface of the substrate without shaking.
  • the processing liquid can be supplied to a wide range on the upper surface of the substrate while controlling the atmosphere on the substrate by the atmosphere control member.
  • the processing liquid can be easily supplied to the portion on the virtual rotation axis of the upper surface of the substrate.
  • the atmosphere on the upper surface of the substrate can be strictly controlled.
  • the liquid discharge portion can be easily moved between the position where the treatment liquid is discharged and the position where the treatment liquid is retracted.
  • the atmosphere on the upper surface of the substrate is satisfactorily controlled by supplying the inert gas from the atmosphere control member, and the liquid discharge portion is not shaken. It is possible to scan the liquid supply position of the processing liquid over a wide range on the upper surface of the substrate. Thereby, for example, it is possible to simultaneously control the atmosphere on the upper surface of the substrate and reduce the variation in processing on the upper surface of the substrate.
  • the substrate processing apparatus for example, when the processing liquid is supplied to the end side region, the speed and the supply amount of the processing liquid decrease. Therefore, for example, the liquid splashing of the processing liquid on the chuck pin holding the outer edge portion of the substrate in the holding portion is unlikely to occur.
  • the substrate processing apparatus for example, by scanning the liquid supply position of the processing liquid a plurality of times over a wide area on the upper surface of the substrate, it is possible to further reduce the variation in processing with respect to the upper surface of the substrate. ..
  • the atmosphere on the upper surface of the substrate is controlled more strictly, and the liquid discharge unit is used. It is possible to scan the liquid supply position of the processing liquid over a wide range on the upper surface of the substrate without shaking.
  • the processing liquid can be supplied to a wide range on the upper surface of the substrate while controlling the atmosphere on the substrate by the atmosphere control member.
  • the processing liquid can be easily supplied to, for example, a portion of the upper surface of the substrate on the virtual rotation axis.
  • the atmosphere on the upper surface of the substrate can be strictly controlled.
  • the liquid discharge unit can be easily moved between the position where the processing liquid is discharged and the position where the processing liquid is retracted.
  • the discharge port in a state where the second tubular portion is inserted through the gap between the guard portion and the atmosphere control member, the discharge port is held on the upper surface of the substrate held by the holding portion. It can be arranged at a position for discharging the processing liquid in the direction along the above. Then, for example, the discharge direction of the processing liquid discharged from the discharge port can be stabilized.
  • the upper surface of the guard portion is arranged at a position higher than the lower surface of the atmosphere control member, and the gap between the guard portion and the atmosphere control member is narrow.
  • the liquid discharge portion can be easily inserted and removed from the gap between the guard portion and the atmosphere control member. Thereby, for example, even if the gap between the guard portion and the atmosphere control member is narrow, the liquid discharge portion can be easily moved between the position where the processing liquid is discharged and the position where the treatment liquid is retracted.
  • the upper surface of the guard portion is arranged at a position higher than the lower surface of the atmosphere control member, and the gap between the guard portion and the atmosphere control member is narrow.
  • the liquid discharge portion can be easily inserted and removed from the gap between the guard portion and the atmosphere control member. Thereby, for example, even if the gap between the guard portion and the atmosphere control member is narrow, the liquid discharge portion can be easily moved between the position where the processing liquid is discharged and the position where the treatment liquid is retracted.
  • the arrangement of the liquid discharge portion is easy.
  • FIG. 1 is a plan view showing a schematic configuration of the substrate processing apparatus according to the first embodiment.
  • FIG. 2 is a side view showing a schematic configuration of a central portion of the substrate processing apparatus in the Y-axis direction.
  • FIG. 3 is a side view showing a schematic configuration of a portion on the ⁇ Y side of the substrate processing apparatus.
  • FIG. 4 is a block diagram showing a functional configuration for controlling the substrate processing apparatus.
  • FIG. 5 is a block diagram showing a configuration example of the control unit.
  • FIG. 6 is a side view schematically showing a configuration example of a processing unit.
  • FIG. 7 is a plan view schematically showing an example of the internal configuration of the processing unit.
  • FIG. 8 is a diagram schematically showing how the first liquid discharge unit discharges the processing liquid onto the substrate.
  • FIG. 9 is a diagram schematically showing how the first liquid discharge unit discharges the processing liquid onto the substrate.
  • FIG. 10 is a diagram schematically showing a direction in which the processing liquid is discharged from the first liquid discharge portion onto the substrate.
  • FIG. 11 is a flow chart showing an example of an operation flow of a series of substrate processing on a substrate in the processing unit.
  • FIG. 12 is a flow chart showing an example of an operation flow of a series of substrate processing on a substrate in the processing unit.
  • FIG. 13 is a schematic side view for explaining an example of a series of substrate processing operations on a substrate in the processing unit.
  • FIG. 14 is a schematic side view for explaining an example of a series of substrate processing operations on a substrate in the processing unit.
  • FIG. 15 is a schematic side view for explaining an example of a series of substrate processing operations on a substrate in the processing unit.
  • FIG. 16 is a schematic side view for explaining an example of a series of substrate processing operations on a substrate in the processing unit.
  • FIG. 17 is a schematic side view for explaining an example of a series of substrate processing operations on a substrate in the processing unit.
  • FIG. 18 is a schematic side view for explaining an example of a series of substrate processing operations on a substrate in the processing unit.
  • FIG. 19 is a schematic side view for explaining an example of a series of substrate processing operations on a substrate in the processing unit.
  • FIG. 20 is a side view schematically showing a configuration example of the processing unit according to the second embodiment.
  • FIG. 21 is a vertical cross-sectional view schematically showing a configuration example of the atmosphere control member according to the second embodiment.
  • FIG. 22 is a vertical cross-sectional view schematically showing the form of the first to third liquid discharge portions according to the third embodiment.
  • FIG. 23 is a plan view schematically showing an example of the internal configuration of the processing unit according to the fourth embodiment.
  • FIG. 24 is a side view schematically showing the arrangement of the first to third liquid discharge portions in the processing unit according to the fifth embodiment.
  • the expression indicating the shape not only expresses the shape strictly geometrically, but also within the range where the same effect can be obtained, for example.
  • a shape having irregularities, chamfers, etc. shall also be represented.
  • the expressions “equipped”, “equipped”, “equipped”, “included”, or “have” one component are not exclusive expressions that exclude the existence of other components.
  • “above” may include not only the case where two elements are in contact with each other but also the case where two elements are separated from each other.
  • moving in a specific direction may include not only moving in parallel with this specific direction but also moving in a direction having a component in this specific direction.
  • FIG. 1 is a plan view of the substrate processing apparatus 1 according to the first embodiment.
  • the substrate processing apparatus 1 processes a substrate (for example, a semiconductor wafer) W.
  • the substrate W includes, for example, a semiconductor wafer, a liquid crystal display substrate, an organic EL (Electroluminescence) substrate, an FPD (Flat Panel Display) substrate, an optical display substrate, a magnetic disk substrate, an optical disk substrate, and a magneto-optical disk substrate. , Photomask substrate, solar cell substrate.
  • the substrate W has a thin flat plate shape. In the present embodiment, an example in which the substrate W is a semiconductor wafer having a circular shape in a plan view will be described.
  • the substrate W has, for example, a diameter of about 300 mm (mm) and a thickness of about 0.5 mm to 3 mm.
  • the substrate processing device 1 includes an indexer unit 2, a processing block 5, and a control unit 9.
  • the indexer unit 2 includes a plurality of (for example, four) carrier mounting units 3 and a first transport mechanism 4.
  • the indexer unit 2 includes a transport space 32.
  • the transport space 32 is arranged on the + X side of the carrier mounting portion 3.
  • the transport space 32 extends along the Y-axis direction.
  • the plurality of carrier mounting portions 3 are arranged in a row along the Y-axis direction, for example. Each carrier mounting unit 3 mounts one carrier C.
  • Carrier C accommodates a plurality of substrates W.
  • Carrier C is, for example, FOUP (front opening unified pod).
  • the carrier C includes, for example, a container and a plurality of vertically arranged shelves arranged in the container. The shelves adjacent to each other in the vertical direction are arranged with an interval of about 10 mm.
  • each shelf has a first support portion that protrudes in the ⁇ Y direction and extends along the X-axis direction from the inner wall on the + Y side of the container, and a container.
  • each shelf has a second support portion that protrudes in the + Y direction and extends along the X-axis direction from the inner wall on the ⁇ Y side.
  • the distance between the first support portion and the second support portion is smaller than the diameter of the substrate W.
  • Each shelf supports the lower surface of the peripheral edge portion of the substrate W by, for example, a first support portion and a second support portion.
  • the plurality of shelves have an interval that allows the substrate W to be moved upward between the vertically adjacent shelves when each shelf supports the substrate W.
  • the carrier C has, for example, a barcode as an identifier for identifying the carrier C or the substrate W in the carrier C. The barcode is attached to the container, for example.
  • the indexer unit 2 includes, for example, a barcode reader 31.
  • the bar code reader 31 reads the bar code attached to the carrier C mounted on the carrier mounting unit 3.
  • the barcode reader 31 is attached to, for example, the carrier mounting portion 3.
  • the barcode reader 31 is communicably connected to the control unit 9.
  • the first transport mechanism 4 is installed in the transport space 32.
  • the first transport mechanism 4 is arranged on the + X side of the carrier mounting portion 3.
  • the first transport mechanism 4 includes a hand 33 and a hand drive unit 34.
  • the hand 33 supports one substrate W in a horizontal posture.
  • the hand 33 supports the substrate W by coming into contact with the lower surface of the substrate W. At this time, the hand 33 may suck the substrate W by, for example, a suction unit or the like.
  • the hand drive unit 34 is connected to the hand 33.
  • the hand drive unit 34 moves the hand 33.
  • FIG. 2 is a side view showing the configuration of the central portion of the substrate processing device 1 in the Y-axis direction.
  • the hand drive unit 34 includes a rail 34a, a horizontal movement unit 34b, a vertical movement unit 34c, a rotation unit 34d, and an advance / retreat movement unit 34e.
  • the rail 34a is fixed to the lower part of the indexer portion 2.
  • the rail 34a is arranged at the bottom of the transport space 32.
  • the rail 34a extends along the Y-axis direction.
  • the horizontal moving portion 34b is supported by the rail 34a.
  • the horizontal moving portion 34b moves along the Y-axis direction with respect to the rail 34a.
  • the vertical moving portion 34c is supported by the horizontal moving portion 34b.
  • the vertical moving portion 34c moves in the vertical direction ( ⁇ Z direction) with respect to the horizontal moving portion 34b.
  • the rotating portion 34d is supported by the vertically moving portion 34c.
  • the rotating portion 34d rotates with respect to the vertically moving portion 34c.
  • the rotating unit 34d rotates about the virtual rotation axis Ax1.
  • the virtual rotation axis Ax1 is parallel to the vertical direction ( ⁇ Z direction).
  • the advancing / retreating moving portion 34e reciprocates in one direction along the horizontal direction determined by the direction of the rotating portion 34d.
  • the hand 33 is fixed to the advancing / retreating moving portion 34e.
  • the hand 33 can be moved in parallel along each of the horizontal direction and the vertical direction ( ⁇ Z direction) by the hand driving unit 34.
  • the hand 33 can rotate about the virtual rotation axis Ax1.
  • the first transport mechanism 4 can access the carriers C mounted on all the carrier mounting portions 3.
  • the first transport mechanism 4 can carry the substrate W into the carriers C mounted on all the carrier mounting portions 3, and also transfers the substrate W from the carriers C mounted on all the carrier mounting portions 3. Can be carried out.
  • the processing block 5 is connected to the indexer unit 2.
  • the processing block 5 is connected to the + X side of the indexer unit 2.
  • the processing block 5 includes a mounting portion 6, a plurality of processing units 7, and a second transport mechanism 8. Further, the processing block 5 includes a transport space 41.
  • the transport space 41 is arranged at the center of the processing block 5 in the Y-axis direction.
  • the transport space 41 extends along the X-axis direction.
  • the transport space 41 is in contact with the transport space 32 of the indexer unit 2.
  • the mounting portion 6 and the second transport mechanism 8 are installed in the transport space 41.
  • the mounting portion 6 is arranged on the ⁇ X side of the second transport mechanism 8.
  • the mounting portion 6 is arranged on the + X side of the first transport mechanism 4.
  • a plurality of substrates W are mounted on the mounting portion 6.
  • the mounting portion 6 is arranged between the first transport mechanism 4 and the second transport mechanism 8.
  • the substrate W transported between the first transport mechanism 4 and the second transport mechanism 8 is mounted on the mounting portion 6.
  • the first transport mechanism 4 described above can access the mounting portion 6.
  • the first transfer mechanism 4 can carry the substrate W into the mounting portion 6, and can carry out the substrate W from the mounting portion 6.
  • the mounting portion 6 includes, for example, a pair of support walls arranged so as to face each other in the Y-axis direction, and a plurality of shelves.
  • Each support wall has, for example, a shape along the XZ plane.
  • a pair of support walls support a plurality of shelves.
  • the shelves are arranged so as to be arranged in the vertical direction. On each shelf, one substrate W can be placed in a horizontal position.
  • Each shelf has, for example, a third support portion that protrudes in the ⁇ Y direction and extends along the X-axis direction from the inner wall of the support wall on the + Y side, and a third support portion that protrudes in the + Y direction and extends in the X-axis direction from the inner wall of the support wall on the ⁇ Y side. It has a fourth support portion extending along the. In each shelf, the distance between the third support portion and the fourth support portion is smaller than the diameter of the substrate W.
  • Each shelf supports the lower surface of the peripheral edge portion of the substrate W by, for example, a third support portion and a fourth support portion.
  • the plurality of shelves have an interval that allows the substrate W to be moved upward between the vertically adjacent shelves when each shelf supports the substrate W.
  • the second transport mechanism 8 includes a hand 61 and a hand drive unit 62.
  • the hand 61 supports one substrate W in a horizontal posture.
  • the hand 61 supports the substrate W by coming into contact with the lower surface of the substrate W. At this time, the hand 61 may suck the substrate W by, for example, a suction unit or the like.
  • the hand drive unit 62 is connected to the hand 61.
  • the hand drive unit 62 moves the hand 61.
  • the hand drive unit 62 includes a support column 62a, a vertical movement unit 62b, a rotation unit 62c, and an advance / retreat movement unit 62d.
  • the support column 62a is fixed to the lower part of the processing block 5.
  • the support column 62a extends in the vertical direction.
  • the vertically moving portion 62b is supported by the support column 62a.
  • the vertical moving portion 62b moves in the vertical direction ( ⁇ Z direction) with respect to the support column 62a.
  • the rotating portion 62c is supported by the vertically moving portion 62b.
  • the rotating portion 62c rotates with respect to the vertically moving portion 62b.
  • the rotating portion 62c rotates about the virtual rotation axis Ax2.
  • the virtual axis of rotation Ax2 is parallel to the vertical direction.
  • the advancing / retreating moving portion 62d reciprocates in one direction along the horizontal direction determined by the direction of the rotating portion 62c.
  • the hand 61 is fixed to the advancing / retreating moving portion 62d.
  • the hand 61 can be moved in parallel along each of the horizontal direction and the vertical direction ( ⁇ Z direction) by the hand driving unit 62.
  • the hand 61 can rotate about the virtual rotation axis Ax2.
  • the second transport mechanism 8 can access the mounting unit 6 and all the processing units 7.
  • the second transfer mechanism 8 can carry the substrate W into the mounting unit 6 or the processing unit 7, and can also carry out the substrate W from the mounting unit 6 or the processing unit 7.
  • Each processing unit 7 processes one substrate W.
  • the plurality of processing units 7 are arranged on both sides of the transport space 41.
  • the plurality of processing units 7 are arranged on the + Y side and the ⁇ Y side of the second transport mechanism 8, respectively.
  • the processing block 5 includes a first processing section 42 and a second processing section 43.
  • the first processing section 42, the transport space 41, and the second processing section 43 are arranged in the order described in the ⁇ Y direction.
  • the first processing section 42 is arranged on the + Y side of the transport space 41.
  • the second processing section 43 is arranged on the ⁇ Y side of the transport space 41.
  • FIG. 3 is a side view showing a schematic configuration of a portion on the ⁇ Y side of the substrate processing device 1.
  • a plurality of processing units 7 are arranged in a matrix along each of the X-axis direction and the vertical direction (Z-axis direction).
  • six processing units 7 are arranged so as to form three stages in the vertical direction (Z-axis direction).
  • Two processing units arranged along the X-axis direction are arranged in each stage of the second processing section 43.
  • a plurality of processing units 7 are arranged along the X-axis direction and the vertical direction (Z-axis direction), respectively. It is arranged in a shape.
  • six processing units 7 are arranged so as to form three stages in the vertical direction (Z-axis direction).
  • Two processing units arranged along the X-axis direction are arranged in each stage of the first processing section 42.
  • FIG. 4 is a block diagram showing a functional configuration for controlling the substrate processing device 1.
  • the control unit 9 is communicably connected to the bar code reader 31, the first transport mechanism 4, the second transport mechanism 8, and the plurality of processing units 7.
  • the control unit 9 controls, for example, the first transfer mechanism 4, the second transfer mechanism 8, and the plurality of processing units 7.
  • FIG. 5 is a block diagram showing a configuration example of the control unit 9.
  • the control unit 9 is realized by, for example, a general computer or the like.
  • the control unit 9 includes, for example, a communication unit 91, an input unit 92, an output unit 93, a storage unit 94, a processing unit 95, and a drive 96, which are connected via a bus line 9Bu.
  • the communication unit 91 transmits and receives signals via a communication line with, for example, the barcode reader 31, the first transfer mechanism 4, the second transfer mechanism 8, and the plurality of processing units 7.
  • the communication unit 91 may receive, for example, a signal from a management server for managing the board processing device 1.
  • the input unit 92 inputs a signal according to, for example, the operation of the operator.
  • the input unit 92 includes, for example, an operation unit such as a mouse and a keyboard capable of inputting a signal corresponding to an operation, a microphone capable of inputting a signal corresponding to a voice, and various sensors capable of inputting a signal corresponding to a movement.
  • the output unit 93 outputs various information in a manner recognizable by the operator, for example.
  • the output unit 93 includes, for example, a display unit that visually outputs various information, a speaker that audibly outputs various information, and the like.
  • the display unit may have, for example, the form of a touch panel integrated with at least a part of the input unit 92.
  • the storage unit 94 stores, for example, the program Pg1 and various types of information.
  • the storage unit 94 is composed of a non-volatile storage medium such as a hard disk or a flash memory, for example.
  • the storage unit 94 may have, for example, a configuration having one storage medium, a configuration having two or more storage media integrally, or a configuration having two or more storage media divided into two or more portions. May be applied.
  • the storage medium stores, for example, information regarding the operating conditions of the first transport mechanism 4, the second transport mechanism 8, and the processing unit 7.
  • the information regarding the operating conditions of the processing unit 7 includes, for example, a processing recipe (process recipe) for processing the substrate W.
  • the storage medium may store, for example, information for identifying each substrate W.
  • the processing unit 95 includes, for example, an arithmetic processing unit 95a that works as a processor, a memory 95b as a work area for arithmetic processing, and the like.
  • An electronic circuit such as a central processing unit (CPU) is applied to the arithmetic processing unit 95a, and a RAM (Random Access Memory) or the like is applied to the memory 95b, for example.
  • the processing unit 95 realizes the function of the control unit 9 by reading and executing the program Pg1 stored in the storage unit 94, for example. Therefore, in the control unit 9, for example, various functional units that control the operation of each unit of the substrate processing device 1 are realized by the processing unit 95 performing arithmetic processing according to the procedure described in the program Pg1.
  • the function and operation of the substrate processing apparatus 1 can be realized by executing the program Pg1 by the control unit 9 included in the substrate processing apparatus 1.
  • Some or all the functional units realized by the control unit 9 may be realized by hardware, for example, by a dedicated logic circuit or the like.
  • the drive 96 is, for example, a part where the portable storage medium Sm1 can be attached and detached.
  • the drive 96 causes data to be exchanged between the storage medium Sm1 and the processing unit 95 in a state where the storage medium Sm1 is attached.
  • the drive 96 reads the program Pg1 from the storage medium Sm1 into the storage unit 94 and stores the program Pg1 in a state where the storage medium Sm1 in which the program Pg1 is stored is mounted on the drive 96.
  • the control unit 9 controls each portion included in the substrate processing apparatus 1 according to a recipe describing the transfer procedure and processing conditions of the substrate W, whereby a series of operations described below can be performed. Will be executed.
  • the first transport mechanism 4 takes out the untreated substrate W from the carrier C.
  • the control unit 9 controls the hand drive unit 34 according to the detection result (information related to the shape of the substrate W, etc.) of the barcode reader 31.
  • the first transport mechanism 4 transports the unprocessed substrate W to the mounting portion 6.
  • the second transfer mechanism 8 transfers the unprocessed substrate W from the mounting unit 6 to the processing unit 7 designated by the recipe or the like.
  • the transfer of the substrate W between the first transfer mechanism 4 and the second transfer mechanism 8 may be performed directly between the hand 33 and the hand 61, for example.
  • the processing unit 7 into which the substrate W is carried executes a predetermined process on the substrate W.
  • the second transfer mechanism 8 takes out the processed substrate W from the processing unit 7.
  • the second transport mechanism 8 transports the processed substrate W to the mounting portion 6.
  • the first transport mechanism 4 transports the substrate W from the mounting portion 6 to the carrier C on the carrier mounting portion 3.
  • the first transfer mechanism 4 and the second transfer mechanism 8 repeatedly perform the above-described transfer operation according to the recipe, and each processing unit 7 executes the process for the substrate W according to the process recipe. As a result, the processing for the substrate W is performed one after another.
  • Each processing unit 7 is, for example, a single-wafer processing unit capable of performing a series of substrate processing in which etching, cleaning, hydrophobization, and drying are performed on the upper surface Wu of the substrate W in the order described in this description.
  • FIG. 6 is a side view schematically showing a configuration example of the processing unit 7.
  • FIG. 7 is a plan view schematically showing an example of the internal configuration of the processing unit 7.
  • each processing unit 7 includes, for example, a processing chamber 7w that forms a processing space inside.
  • the processing chamber 7w is formed with, for example, a carry-in / out port (not shown) for inserting the hand 61 of the second transfer mechanism 8 into the processing chamber 7w.
  • the carry-in / out port is provided with, for example, a shutter that is opened when the hand 61 is inserted into the processing unit 7 and closed when the hand 61 is not inserted inside the processing unit 7. Therefore, the processing unit 7 is located, for example, so that the carry-in / out port faces the transport space 41 in which the second transport mechanism 8 is arranged.
  • each processing unit 7 includes, for example, a rotation holding mechanism 72.
  • the rotation holding mechanism 72 has, for example, a holding portion 720.
  • the holding unit 720 holds, for example, one substrate W in a horizontal posture.
  • a mechanical chuck or a mechanical gripper may be applied to the holding portion 720, or a Bernoulli chuck or a Bernoulli gripper may be applied.
  • the mechanical chuck is suitable for holding a relatively thick substrate W, for example, and the Bernoulli chuck is suitable for holding a relatively thin substrate W, for example.
  • the six processing units 7 arranged in the first processing section 42 are the first processing units 7A to which a mechanical chuck or a mechanical gripper is applied to the holding portion 720, respectively.
  • the six processing units 7 arranged in the second processing section 43 are the second processing units 7B to which the Bernoulli chuck or Bernoulli gripper is applied to the holding portion 720, respectively.
  • 6 and 7 show a configuration example of the first processing unit 7A.
  • the configuration of the first processing unit 7A will be described as an example.
  • the holding portion 720 has, for example, a spin base 723 and a plurality of chuck pins 724.
  • the spin base 723 is, for example, a disk-shaped member having a substantially horizontal posture.
  • the plurality of chuck pins 724 are erected near the peripheral edge portion on the upper surface side of the spin base 723, for example, and are a portion capable of holding the substrate W by gripping the peripheral edge portion of the substrate W. ..
  • a plurality of chuck pins 724 can hold the substrate W in a horizontal posture.
  • chuck pins 724 may be provided in order to securely hold the circular substrate W, and the chuck pins 724 are arranged at equal angular intervals along the peripheral edge of the spin base 723.
  • Each chuck pin 724 has, for example, a portion that supports the peripheral edge portion of the substrate W from below (also referred to as a substrate support portion) and a portion that presses the outer peripheral end surface of the substrate W supported by the substrate support portion to hold the substrate W. (Also referred to as a substrate gripping portion).
  • each chuck pin 724 is configured to be switchable between a pressing state in which the substrate gripping portion presses the outer peripheral end surface of the substrate W and an open state in which the substrate gripping portion is separated from the outer peripheral end surface of the substrate W.
  • each chuck pin 724 is released, and when the substrate W is subjected to substrate processing, each chuck pin is released. 724 is in the pressed state.
  • each chuck pin 724 grips the peripheral edge portion of the substrate W, and the substrate W is held in a substantially horizontal posture at a predetermined interval from the spin base 723.
  • the rotation holding mechanism 72 has, for example, a central shaft 721 and a rotation mechanism 722.
  • the central axis 721 is, for example, a rod-shaped member having a longitudinal direction along a vertical direction (Z-axis direction) and a perfect circular cross section.
  • substantially the center of the lower surface of the spin base 723 is fixed to the upper end of the central shaft 721 with fastening parts such as screws.
  • the rotation mechanism 722 is, for example, a portion (also referred to as a first drive unit) that generates a driving force such as a motor for rotating the central shaft 721.
  • a driving force such as a motor for rotating the central shaft 721.
  • the spin base 723 fixed to the central shaft 721 extends along the vertical direction as a virtual shaft. It rotates around 72a (also called a rotation axis). That is, the rotation mechanism 722 can rotate the holding portion 720 around the rotation shaft 72a.
  • the substrate W held in a substantially horizontal posture by the holding portion 720 is rotated about the rotation shaft 72a.
  • the rotating shaft 72a passes through the centers of the upper surface Wu and the lower surface Wb of the substrate W held by the holding portion 720, for example.
  • each processing unit 7 includes, for example, a guard 73.
  • the guard 73 is arranged so as to surround the lateral periphery of the rotation holding mechanism 72.
  • the guard 73 has, for example, a plurality of guard units that can be raised and lowered independently of each other by the raising and lowering drive unit 73m.
  • the guard 73 has, for example, a first guard portion 731, a second guard portion 732, and a third guard portion 733.
  • Various mechanisms such as a ball screw mechanism or an air cylinder can be applied to the elevating drive unit 73m.
  • the elevating drive unit 73m raises and lowers each of the first guard unit 731, the second guard unit 732, and the third guard unit 733 along the vertical direction in response to an operation command from the control unit 9, for example.
  • the control unit 9 raises and lowers each of the first guard unit 731, the second guard unit 732, and the third guard unit 733 along the vertical direction by the elevating drive unit 73m.
  • the control unit 9 sets the first to third guard units 731, 732, 733 as the raised position (also referred to as the ascending position) and the lowered position (also referred to as the lowering position) by the elevating drive unit 73m. Raise and lower between.
  • any of the first guard portion 731, the second guard portion 732, and the third guard portion 733 can receive and recover the processing liquid scattered from the upper surface Wu of the substrate W.
  • the first guard portion 731 is arranged so as to surround the lateral periphery of the rotation holding mechanism 72, for example.
  • the first guard portion 731 has a shape that is substantially rotationally symmetric with respect to the rotation shaft 72a that passes through the center of the substrate W held by the rotation holding mechanism 72, for example.
  • the first guard portion 731 has, for example, a side wall portion having a cylindrical shape centered on the rotation shaft 72a and an annular shape centered on the rotation shaft 72a, and the rotation shaft is formed from the upper end portion of the side wall portion. It has an upwardly inclined portion extending diagonally upward so as to approach 72a.
  • the second guard portion 732 is arranged so as to further surround the outer peripheral portion of the first guard portion 731, which is located so as to surround the lateral periphery of the rotation holding mechanism 72, for example.
  • the second guard portion 732 has a shape that is substantially rotationally symmetric with respect to the rotation shaft 72a that passes through the center of the substrate W held by the rotation holding mechanism 72, for example.
  • the second guard portion 732 has, for example, a side wall portion having a cylindrical shape centered on the rotation shaft 72a and an annular shape centered on the rotation shaft 72a, and the rotation shaft is formed from the upper end portion of the side wall portion. It has an upwardly inclined portion extending diagonally upward so as to approach 72a.
  • the third guard portion 733 is arranged so as to further surround the outer peripheral portions of the first guard portion 731 and the second guard portion 732, which are located so as to sequentially surround the lateral periphery of the rotation holding mechanism 72, for example.
  • the third guard portion 733 has a shape that is substantially rotationally symmetric with respect to the rotation shaft 72a that passes through the center of the substrate W held by the rotation holding mechanism 72, for example.
  • the third guard portion 733 has, for example, a side wall portion having a cylindrical shape centered on the rotation shaft 72a and an annular shape centered on the rotation shaft 72a, and the rotation shaft is formed from the upper end portion of the side wall portion. It has an upwardly inclined portion extending diagonally upward so as to approach 72a.
  • the first guard portion 731 when the first guard portion 731 is arranged in an ascending position so as to surround the holding portion 720 from the side, the upper surface Wu of the substrate W held and rotated by the rotation holding mechanism 72.
  • the processing liquid discharged toward the surface scatters from the upper surface Wu of the substrate W toward the first guard portion 731, and is received by the wall surface (also referred to as the inner wall surface) of the first guard portion 731 on the rotation shaft 72a side.
  • the treatment liquid received by the first guard portion 731 flows down along the inner wall surface of the first guard portion 731, and is collected via the first drain tank 734 and the first drain port 737, for example.
  • the rotation holding mechanism The processing liquid held and rotated by 72 and discharged toward the upper surface Wu of the substrate W scatters from the upper surface Wu of the substrate W toward the second guard portion 732, and the rotation shaft 72a of the second guard portion 732 a. It is received by the side wall surface (also called the inner wall surface).
  • the treatment liquid received by the second guard portion 732 flows down along the inner wall surface of the second guard portion 732, and is collected via the second drain tank 735 and the second drain port 738, for example.
  • each of the first guard portion 731 and the second guard portion 732 is lowered to the lowered position, and the third guard portion 733 is arranged at the raised position so as to surround the holding portion 720 from the side. If so, the processing liquid held by the rotation holding mechanism 72 and discharged toward the upper surface Wu of the substrate W is scattered from the upper surface Wu of the substrate W toward the third guard portion 733, and the first 3 The guard portion 733 is received by the wall surface (also referred to as the inner wall surface) on the rotation shaft 72a side. The liquid received by the third guard portion 733 flows down along the inner wall surface of the third guard portion 733, and is collected through the third drain tank 736 and the third drain port 739, for example.
  • each processing unit 7 includes, for example, first to third liquid discharge units 751n, 752n, 753n, first to third liquid supply paths 751p, 752p, 753p, and first to third change units. It has 751v, 752v, and 753v.
  • the first liquid discharge unit 751n is, for example, a treatment liquid (first treatment) from the discharge port (also referred to as the first discharge port) 751o in the direction along the upper surface Wu of the substrate W held horizontally by the holding unit 720.
  • the first treatment liquid is supplied onto the upper surface Wu by discharging the liquid).
  • the first liquid discharge unit 751n includes, for example, a nozzle such as a straight nozzle that discharges the first treatment liquid in a continuous flow state.
  • the first treatment liquid can be etched with respect to the substrate W such as diluted hydrofluoric acid (DHF: Diluted Hydrofluoric acid), hydrofluoric acid-hydrophobic acid mixture (FPM: Hydrofluoric Peroxide Mixture), or phosphoric acid. Contains liquids (also called chemicals).
  • the first liquid supply path 751p connects the supply source of the first treatment liquid (also referred to as the first supply source) and the first liquid discharge unit 751n.
  • the first source includes, for example, a tank that stores the chemical solution and a mechanism such as a pump for delivering the chemical solution from the tank.
  • the first change unit 751v is located in the middle of the first liquid supply path 751p, and changes, for example, the amount of the first treatment liquid supplied from the first supply source to the first liquid discharge unit 751n per unit time.
  • the first changing unit 751v changes, for example, the supply amount of the first processing liquid from the first supply source to the first liquid discharging unit 751n per unit time by adjusting the degree of throttle (also referred to as opening degree).
  • a flow control valve such as a needle valve capable of The degree of throttle (opening) in the flow control valve is indicated by, for example, the number of pulses indicating the position of the motor.
  • the throttle degree (opening) of the flow control valve is changed according to, for example, an operation command related to the number of pulses from the control unit 9.
  • control unit 9 controls the presence / absence of discharge of the first processing liquid from the first liquid discharge unit 751n onto the upper surface Wu of the substrate W by controlling the opening degree of the first change unit 751v.
  • the speed at which the first treatment liquid is discharged from the first liquid discharge unit 751n onto the upper surface Wu of the substrate W (also referred to as the discharge speed) and from the first liquid discharge unit 751n onto the upper surface Wu of the substrate W.
  • the amount of the first treatment liquid discharged per unit time also referred to as the discharge amount
  • the second liquid discharge unit 752n is, for example, a treatment liquid (second treatment) from the discharge port (also referred to as the second discharge port) 752o in the direction along the upper surface Wu of the substrate W held horizontally by the holding unit 720.
  • the second treatment liquid is supplied onto the upper surface Wu by discharging the liquid).
  • the second liquid discharge unit 752n includes, for example, a nozzle such as a straight nozzle that discharges the second treatment liquid in a continuous flow state.
  • the second treatment liquid contains, for example, a solvent such as isopropyl alcohol (IPA).
  • the second liquid supply path 752p connects the supply source of the second treatment liquid (also referred to as the second supply source) and the second liquid discharge unit 752n.
  • the second source includes, for example, a tank that stores a solvent such as IPA and a mechanism such as a pump for delivering the solvent from the tank.
  • the second change unit 752v is located in the middle of the second liquid supply path 752p, and changes, for example, the amount of the second treatment liquid supplied from the second supply source to the second liquid discharge unit 752n per unit time.
  • the second changing unit 752v changes, for example, the supply amount of the second processing liquid from the second supply source to the second liquid discharging unit 752n per unit time by adjusting the degree of throttle (also referred to as opening degree).
  • a flow control valve such as a needle valve capable of The degree of throttle (opening) in the flow control valve is indicated by, for example, the number of pulses indicating the position of the motor.
  • the throttle degree (opening) of the flow control valve is changed according to, for example, an operation command related to the number of pulses from the control unit 9.
  • control unit 9 controls the presence / absence of discharge of the second processing liquid from the second liquid discharge unit 752n onto the upper surface Wu of the substrate W by controlling the opening degree of the second change unit 752v.
  • the speed at which the second processed liquid is discharged from the second liquid discharge unit 752n onto the upper surface Wu of the substrate W discharge speed
  • the amount of the second treatment liquid discharged (also referred to as the discharge amount) per unit time can be changed.
  • the third liquid discharge unit 753n is, for example, a treatment liquid (third treatment) from a discharge port (also referred to as a third discharge port) 753o in a direction along the upper surface Wu of the substrate W held in a horizontal posture by the holding unit 720.
  • the third treatment liquid is supplied onto the upper surface Wu by discharging the liquid).
  • the third liquid discharge unit 753n includes, for example, a nozzle such as a straight nozzle that discharges the third treatment liquid in a continuous flow state.
  • the third treatment liquid contains, for example, a hydrophobizing liquid.
  • the hydrophobizing solution includes, for example, a silicon-based hydrophobizing solution.
  • the silicon-based hydrophobizing solution is a hydrophobizing solution that hydrophobicizes silicon (Si) itself and a compound containing silicon.
  • the silicon-based hydrophobizing solution is, for example, a silane coupling agent (also referred to as a silylating agent).
  • This silylating agent is, for example, an organic having an ethoxy (or methoxy) group that imparts a silanol group (Si-OH) by hydrolysis at one end of the molecule and an organic functional group such as an amino group or a glycidyl group at the other end. It is a silicon compound.
  • the silylating agent contains, for example, at least one of HMDS (hexamethyldisilazane), TMS (tetramethylsilane), fluorinated alkylchlorosilane, alkyldisilazane, and a non-chlorohydrophobic solution.
  • Non-chlorohydrophobicized solutions include, for example, dimethylsilyldimethylamine, dimethylsilyldiethylamine, hexamethyldisilazane, tetramethyldisilazane, bis (dimethylamino) dimethylsilane, N, N-dimethylaminotrimethylsilane, N- (trimethylsilyl).
  • the third liquid supply path 753p connects the supply source of the third treatment liquid (also referred to as the third supply source) and the third liquid discharge unit 753n.
  • the third source includes, for example, a tank that stores the hydrophobizing solution such as a silylating agent and a mechanism such as a pump for delivering the hydrophobizing solution from the tank.
  • the third change unit 753v is located in the middle of the third liquid supply path 753p, and changes, for example, the amount of the third treatment liquid supplied from the third supply source to the third liquid discharge unit 753n per unit time.
  • the third change unit 753v changes, for example, the supply amount of the third processing liquid from the third supply source to the third liquid discharge unit 753n per unit time by adjusting the degree of throttle (also referred to as opening degree).
  • a flow control valve such as a needle valve capable of The degree of throttle (opening) in the flow control valve is indicated by, for example, the number of pulses indicating the position of the motor.
  • the throttle degree (opening) of the flow control valve is changed according to, for example, an operation command related to the number of pulses from the control unit 9.
  • control unit 9 controls the presence / absence of the discharge of the third processing liquid from the third liquid discharge unit 753n onto the upper surface Wu of the substrate W by controlling the opening degree of the third change unit 753v.
  • the speed at which the third processed liquid is discharged from the third liquid discharge unit 753n onto the upper surface Wu of the substrate W discharge speed
  • the amount of the third processing liquid discharged (also referred to as the discharge amount) per unit time can be changed.
  • the first liquid discharge unit 751n is connected to, for example, the first moving mechanism 751m provided in the processing chamber 7w.
  • the first moving mechanism 751m is an example of a portion (third driving unit) for moving the first liquid discharging unit 751n.
  • the first moving mechanism 751m rotates the first liquid discharge unit 751n around, for example, a virtual shaft (also referred to as a virtual shaft) 751a extending along the vertical direction.
  • the first moving mechanism 751m includes, for example, an arm rotatably supported around a virtual shaft 751a, a motor for rotating the arm, and the like.
  • the first moving mechanism 751m positions the first discharge port 751o of the first liquid discharge unit 751n above or near the outer peripheral portion of the holding unit 720, for example, in response to an operation command from the control unit 9. It is moved between (also referred to as the first inner position) and a position farther from the rotation shaft 72a than the first inner position (also referred to as the first outer position).
  • the first liquid discharge portion 751n located at the first outer position is drawn by a solid line
  • the first liquid discharge portion 751n located at the first inner position is drawn by a two-dot chain line. ..
  • the first moving mechanism 751m raises and lowers the first liquid discharge unit 751n along the vertical direction, for example.
  • Various mechanisms such as a ball screw mechanism or an air cylinder can be applied to the first moving mechanism 751 m.
  • the first moving mechanism 751m causes, for example, the first discharge port 751o of the first liquid discharge unit 751n to the upper surface Wu of the substrate W held by the holding unit 720 in response to an operation command from the control unit 9.
  • a position close to the virtual plane along the virtual plane also referred to as the first lower position
  • a position separated upward from the virtual plane along the upper surface Wu of the substrate W held by the holding portion 720 also referred to as the first upper position. Move between ,.
  • the first discharge port 751o dispenses the first treatment liquid with respect to the upper surface Wu of the substrate W. It is arranged at the discharge position (also referred to as the first discharge position). At this time, for example, the first discharge port 751o may not be located above the upper surface Wu of the substrate W, or may be located above the outer peripheral portion of the upper surface Wu of the substrate W. Further, if the first discharge port 751o is arranged at the first outer position and is arranged at the first upper position, the first liquid discharge portion 751n is at a position retracted from or near the holding portion 720 (the first position). 1 It is also called the evacuation position).
  • each of the second liquid discharge unit 752n and the third liquid discharge unit 753n is connected to, for example, a second moving mechanism 752 m provided in the processing chamber 7w.
  • the second moving mechanism 752m is an example of a portion (third driving unit) for moving the second liquid discharging unit 752n and the third liquid discharging unit 753n.
  • the second moving mechanism 752m rotates the second liquid discharge unit 752n and the third liquid discharge unit 753n around, for example, a virtual shaft (also referred to as a virtual shaft) 752a extending in the vertical direction.
  • the second moving mechanism 752m includes, for example, an arm rotatably supported around the virtual shaft 752a, a motor for rotating the arm, and the like. As a result, the second moving mechanism 752m positions the second discharge port 752o of the second liquid discharge unit 752n above or near the outer peripheral portion of the holding unit 720, for example, in response to an operation command from the control unit 9.
  • the outlet 753o is located above or near the outer peripheral portion of the holding portion 720 (also referred to as the third inner position) and at a position farther from the rotation shaft 72a than the third inner position (also referred to as the third outer position).
  • the second liquid discharge portion 752n located at the second outer position and the third liquid discharge portion 753n located at the third outer position are drawn with solid lines and are located at the second inner position.
  • the second liquid discharge portion 752n and the third liquid discharge portion 753n located at the third inner position are drawn by a two-dot chain line.
  • the second moving mechanism 752m raises and lowers the second liquid discharge unit 752n and the third liquid discharge unit 753n along the vertical direction, for example.
  • Various mechanisms such as a ball screw mechanism or an air cylinder can be applied to the second moving mechanism 752 m.
  • the second moving mechanism 752m causes, for example, the second discharge port 752o of the second liquid discharge unit 752n to the upper surface Wu of the substrate W held by the holding unit 720 in response to an operation command from the control unit 9.
  • a position close to the virtual plane along the virtual plane also referred to as the second lower position
  • a position separated upward from the virtual plane along the upper surface Wu of the substrate W held by the holding portion 720 also referred to as the second upper position).
  • the third discharge port 753o of the third liquid discharge unit 753n is moved between the above and the position close to the virtual plane along the upper surface Wu of the substrate W held by the holding unit 720 (also referred to as the third lower position). ) And a position (also referred to as a third upper position) away from the virtual plane along the upper surface Wu of the substrate W held by the holding portion 720.
  • the second discharge port 752o dispenses the second treatment liquid with respect to the upper surface Wu of the substrate W. It is arranged at the discharge position (also referred to as the second discharge position). At this time, for example, the second discharge port 752o may not be located above the upper surface Wu of the substrate W, or may be located above the outer peripheral portion of the upper surface Wu of the substrate W. Further, if the second discharge port 752o is arranged at the second outer position and is arranged at the second upper position, the second liquid discharge portion 752n is at a position retracted from or near the holding portion 720 (the first position). 2 It is also called the evacuation position).
  • the third discharge port 753o discharges the third treatment liquid toward the upper surface Wu of the substrate W. It is arranged at the position (also referred to as the third discharge position). At this time, for example, the third discharge port 753o may not be located above the upper surface Wu of the substrate W, or may be above the outer peripheral portion of the upper surface Wu of the substrate W when viewed in a plan view downward. It may be located. Further, if the third discharge port 753o is arranged at the third outer position and is arranged at the third upper position, the third liquid discharge portion 753n is at a position retracted from or near the holding portion 720 (the first position). 3 It is also called the evacuation position).
  • each processing unit 7 includes, for example, an atmosphere control member 74.
  • the atmosphere control member 74 supplies the inert gas onto the upper surface Wu in a state of facing the upper surface Wu of the substrate W held in a horizontal posture by, for example, the holding portion 720.
  • the atmosphere control member 74 supplies the inert gas onto the upper surface Wu in a state of facing the upper surface Wu of the substrate W held in a horizontal posture by, for example, the holding portion 720.
  • adverse effects of oxygen and moisture on various treatment liquids supplied on the upper surface Wu of the substrate W are less likely to occur.
  • the adverse effects referred to here are, for example, material loss due to excessive etching, oxidation of the surface layer portion along the upper surface Wu of the substrate W, reduction of active species in the hydrophobized solution (also referred to as deactivation), and hydrophobization. It may include a decrease in the coatability of the liquid and a decrease in the replaceability of the rinse liquid with a solvent.
  • the atmosphere control member 74 covers, for example, the upper surface Wu of the substrate W held horizontally by the holding portion 720, and the inert gas is placed between the upper surface Wu and the atmosphere control member 74.
  • the blocking plate 741 is, for example, a disk-shaped member through which the rotating shaft 72a passes through the center.
  • the lower surface 74b of the blocking plate 741 is a surface facing substantially parallel to the upper surface Wu of the substrate W, and has a size equal to or larger than the diameter of the substrate W. With this blocking plate 741, for example, the atmosphere on the upper surface Wu of the substrate W can be strictly controlled.
  • the atmosphere control member 74 has, for example, a support shaft 742.
  • a blocking plate 741 is attached to the lower end of the support shaft 742 in a substantially horizontal posture.
  • the arm 743 and the third moving mechanism 74m are sequentially connected to the support shaft 742.
  • the arm 743 is in a state of holding the support shaft 742 in a state of extending in the horizontal direction, for example.
  • Various mechanisms such as a ball screw mechanism or an air cylinder can be applied to the third moving mechanism 74m.
  • the third moving mechanism 74m raises and lowers the arm 743, the support shaft 742, and the blocking plate 741 along the vertical direction, for example, in response to an operation command from the control unit 9.
  • the third moving mechanism 74m is, for example, a position (also referred to as a proximity position) or a holding portion in which the blocking plate 741 is brought close to the upper surface Wu of the substrate W held by the holding portion 720 in response to an operation command from the control unit 9. It can be arranged at a position (also referred to as a separation position) separated from the upper surface Wu of the substrate W held by the 720.
  • the control unit 9 controls the operation of the third moving mechanism 74m to rotate and hold the blocking plate 741 as shown in FIG. 6 when the substrate W is carried in and out of the processing unit 7.
  • the blocking plate 741 While raising to a separated position separated from the mechanism 72 in the upward direction (+ Y direction), when performing a predetermined substrate treatment on the substrate W in the processing unit 7, the blocking plate 741 is held by the holding portion 720. It is lowered to a position close to the upper surface Wu of W.
  • the state in which the blocking plate 741 is lowered to the close position is shown, for example, in FIGS. 8 (a) and 9 (a), which will be described later.
  • the atmosphere control member 74 includes, for example, a central nozzle group 74n that discharges the treatment liquid downward from the central portion of the lower surface 74b of the blocking plate 741.
  • the central nozzle group 74n extends vertically along, for example, a virtual rotation axis 72a passing through the center of the blocking plate 741 and the substrate W.
  • the central nozzle group 74n is arranged above the holding portion 720.
  • the central nozzle group 74n moves up and down together with the blocking plate 741 and the support shaft 742.
  • the support shaft 742 has a tubular shape extending along the vertical direction, and has a through hole penetrating along the vertical direction.
  • the through hole of the support shaft 742 communicates with the through hole penetrating the central portion of the blocking plate 741 along the vertical direction.
  • the through hole of the blocking plate 741 is opened at the center of the lower surface 74b of the blocking plate 741.
  • the central nozzle group 74n is located in a state of being inserted into the space in the through hole of the support shaft 742.
  • the lower surface of the central nozzle group 74n is located at the same height as the lower surface 74b of the blocking plate 741 or above the lower surface 74b of the blocking plate 741.
  • the central nozzle group 74n includes, for example, a first central nozzle 747n, a second central nozzle 748n, and a third central nozzle 749n housed in a common case extending vertically along the rotation axis 72a.
  • the first center nozzle 747n, the second center nozzle 748n, and the third center nozzle 749n extend vertically along the rotation axis 72a, respectively.
  • Each of the first center nozzle 747n, the second center nozzle 748n, and the third center nozzle 749n is composed of, for example, a straight pipe along the vertical direction.
  • the openings (discharge ports) provided at the lower ends of the first center nozzle 747n, the second center nozzle 748n, and the third center nozzle 749n are at the same height as the lower surface 74b of the blocking plate 741 or from the lower surface 74b of the blocking plate 741. It is located above.
  • the first central nozzle 747n is connected to the first liquid supply path 747p in which the first liquid valve 747v is provided in the middle.
  • piping is applied to the first liquid supply path 747p.
  • the first liquid supply path 747p is connected to a supply source (also referred to as a fourth supply source) for supplying a rinse liquid such as pure water (DIW: De-Ionized water) as the fourth treatment liquid.
  • the fourth supply source includes, for example, a tank for storing a rinse liquid such as DIW as a fourth treatment liquid and a mechanism such as a pump for delivering the rinse liquid from the tank.
  • the fourth liquid valve 747n is supplied from the fourth supply source to the first central nozzle 747n via the first liquid supply path 747p.
  • the rinse liquid as the treatment liquid is discharged downward from the discharge port of the first center nozzle 747n.
  • the second central nozzle 748n is connected to the second liquid supply path 748p in which the second liquid valve 748v is provided in the middle.
  • piping is applied to the second liquid supply path 748p.
  • the second liquid supply path 748p is connected to a supply source (also referred to as a fifth supply source) for supplying the hydrophobized liquid as the fifth treatment liquid.
  • the fifth source includes, for example, a tank that stores the hydrophobizing solution such as a silylating agent and a mechanism such as a pump for delivering the hydrophobizing solution from the tank.
  • the fifth treatment liquid may be the same as the third treatment liquid, or may be different from the third treatment liquid.
  • the fifth source may be, for example, the same as the third source or different from the third source.
  • the fifth liquid valve 748n is supplied from the fifth supply source to the second central nozzle 748n via the second liquid supply path 748p.
  • the hydrophobized liquid as the treatment liquid is discharged downward from the discharge port of the second central nozzle 748n.
  • the third central nozzle 749n is connected to the third liquid supply path 749p in which the third liquid valve 749v is provided in the middle.
  • piping is applied to the third liquid supply path 749p.
  • the third liquid supply path 749p is connected to a supply source (also referred to as a sixth supply source) for supplying the solvent as the sixth treatment liquid.
  • the sixth source includes, for example, a tank for storing a solvent such as IPA and a mechanism such as a pump for delivering the solvent from the tank.
  • the sixth treatment liquid may be the same as the second treatment liquid, or may be different from the second treatment liquid.
  • the sixth source may be, for example, the same as the second source or different from the second source.
  • the sixth supply source supplies the third liquid valve 749n to the third central nozzle 749n via the third liquid supply path 749p.
  • the solvent as the treatment liquid is discharged downward from the discharge port of the third central nozzle 749n.
  • the first central nozzle 747n, the second central nozzle 748n, and the third central nozzle 749n are surrounded by a gas nozzle 745n having a tubular gas flow path formed around the central nozzle group 74n.
  • the lower end of the gas nozzle 745n forms an annular opening (also referred to as an annular opening) arranged so as to surround the central nozzle group 74n.
  • the gas nozzle 745n is connected to a first gas supply path 745p in which a first gas valve 745v is provided in the middle. For example, piping is applied to the first gas supply path 745p.
  • the first gas supply path 745p is connected to a supply source (also referred to as a gas supply source) for supplying an inert gas such as nitrogen gas.
  • Gas supply sources include, for example, cylinders and pressure regulators that store an inert gas such as nitrogen gas.
  • the nitrogen gas or the like supplied from the gas supply source to the gas nozzle 745n via the first gas supply path 745p is defective.
  • the active gas is discharged downward from the annular opening of the gas nozzle 745n.
  • an inert gas such as nitrogen gas is supplied to the gas nozzle 745n in response to an operation command of the control unit 9. It can be discharged downward from the annular opening.
  • an inert gas such as nitrogen gas is used in response to the operation command of the control unit 9.
  • an inert gas such as nitrogen gas having a lower oxygen concentration and a lower humidity. It can be replaced with an active gas. That is, the atmosphere on the upper surface Wu of the substrate W can be satisfactorily controlled by supplying the inert gas from the atmosphere control member 74.
  • the blocking plate 741 includes, for example, a plurality of gas discharge ports 746o opened at the peripheral edge of the lower surface 74b of the blocking plate 741 and a gas flow path 746r connected to each of the plurality of gas discharge ports 746o.
  • the plurality of gas discharge ports 746o are distributed over the entire peripheral portion of the lower surface 74b of the blocking plate 741, for example.
  • the gas flow path 746r is provided inside the blocking plate 741.
  • the gas flow path 746r is connected to a second gas supply path 746p in which a second gas valve 746v is provided in the middle.
  • piping is applied to the second gas supply path 746p.
  • the second gas supply path 746p is connected to a supply source (gas supply source) for supplying an inert gas such as nitrogen gas.
  • Gas supply sources include, for example, cylinders and pressure regulators that store an inert gas such as nitrogen gas.
  • the first gas supply path 745p and the second gas supply path 746p may be connected to the same gas supply source, or may be connected to different gas supply sources.
  • an inert gas such as nitrogen gas is supplied from the gas supply source to each gas discharge port 746o via the second gas supply path 746p and the gas flow path 746r.
  • the gas is discharged downward from each gas discharge port 746o toward the peripheral edge of the upper surface Wu of the substrate W.
  • a plurality of independent gases such as nitrogen gas are discharged according to the operation command of the control unit 9. It can be discharged downward from the outlet 746o.
  • an inert gas such as nitrogen gas is used in response to the operation command of the control unit 9. Is discharged downward from the plurality of gas discharge ports 746o to create an atmosphere on the upper surface Wu of the substrate W held by the holding portion 720, for example, an inert gas such as nitrogen gas having a lower oxygen concentration and a lower humidity. It can be replaced with an active gas. That is, the atmosphere on the upper surface Wu of the substrate W can be satisfactorily controlled by supplying the inert gas from the atmosphere control member 74.
  • the processing unit 7 includes, for example, a fan filter unit (FFU) 7f.
  • the FFU 7f can further purify the air in the clean room in which the substrate processing device 1 is installed and supply it to the space in the processing chamber 7w.
  • the FFU7f is attached to, for example, the ceiling wall of the processing chamber 7w.
  • the FFU7f is provided with a fan and a filter (for example, a HEPA filter) for taking in the air in the clean room and sending it out into the processing chamber 7w, and can form a downflow of clean air in the processing space in the processing chamber 7w. can.
  • a punching plate having a large number of blowout holes may be arranged directly under the ceiling wall.
  • an exhaust duct 7e which is a part of the side wall of the processing chamber 7w and is connected to the exhaust mechanism in the vicinity of the floor wall of the processing chamber 7w is provided.
  • the first liquid discharge unit 751n, the second liquid discharge unit 752n, and the third liquid discharge unit 753n can discharge the processing liquid onto the upper surface Wu of the substrate W in the same manner. Therefore, here, a mode in which the first processing liquid is discharged from the first liquid discharge unit 751n toward the upper surface Wu of the substrate W will be described as a typical example.
  • 8 and 9 are diagrams schematically showing how the first treatment liquid Lq1 is discharged from the first liquid discharge unit 751n onto the upper surface Wu of the substrate W, respectively.
  • 8 (a) and 9 (a) are side views schematically showing how the first treatment liquid Lq1 is discharged from the first liquid discharge unit 751n onto the upper surface Wu of the substrate W, respectively.
  • 8 (b) and 9 (b) are plan views schematically showing how the first treatment liquid Lq1 is discharged from the first liquid discharge unit 751n onto the upper surface Wu of the substrate W, respectively.
  • the first discharge port 751o is in a state of being arranged at the first discharge position which is the first inner position and the first lower position. be.
  • the first liquid discharge unit 751n may discharge the first treatment liquid Lq1 from the first discharge port 751o in the direction along the upper surface Wu of the substrate W held in the holding unit 720 in a horizontal posture.
  • the blocking plate 741 is in a state of being lowered to a close position.
  • the control unit 9 changes the supply amount of the first processing liquid Lq1 from the first supply source to the first liquid discharge unit 751n per unit time to the first change unit 751v, thereby changing the first liquid.
  • the discharge speed of the first treatment liquid Lq1 discharged from the discharge unit 751n can be changed.
  • the position (also referred to as the liquid supply position) where the first processing liquid Lq1 discharged from the first liquid discharge portion 751n on the upper surface Wu of the substrate W is supplied changes.
  • the liquid supply position is, for example, a position (also referred to as a liquid landing position) at which the first treatment liquid Lq1 discharged from the first liquid discharge unit 751n first reaches the upper surface Wu of the substrate W.
  • the first liquid discharge unit 751n is swung while satisfactorily controlling the atmosphere on the upper surface Wu of the substrate W by supplying the inert gas from the atmosphere control member 74.
  • the liquid supply position of the first treatment liquid Lq1 can be scanned over a wide range on the upper surface Wu of the substrate W. Therefore, for example, it is possible to simultaneously control the atmosphere on the upper surface Wu of the substrate W and reduce the variation in processing with respect to the upper surface Wu of the substrate W.
  • the control unit 9 causes the second change unit 752v to change the supply amount of the second processing liquid from the second supply source to the second liquid discharge unit 752n per unit time.
  • the second treatment liquid discharged from the second liquid discharge unit 752n of the upper surface Wu of the substrate W is supplied.
  • the position (liquid supply position) changes.
  • This liquid supply position is, for example, a position (liquid landing position) at which the second treatment liquid discharged from the second liquid discharge unit 752n first reaches the upper surface Wu of the substrate W.
  • the control unit 9 causes the third change unit 753v to change the supply amount of the third processing liquid from the third supply source to the third liquid discharge unit 753n per unit time.
  • the third treatment liquid discharged from the third liquid discharge unit 753n of the upper surface Wu of the substrate W is supplied.
  • the position (liquid supply position) changes.
  • This liquid supply position is, for example, a position (liquid landing position) at which the third treatment liquid discharged from the third liquid discharge unit 753n first reaches the upper surface Wu of the substrate W.
  • the atmosphere on the upper surface Wu of the substrate W is satisfactorily controlled by the supply of the inert gas from the atmosphere control member 74, and the second liquid discharge unit 752n and the third liquid discharge unit 753n are operated. It is possible to scan the liquid supply positions of the second treatment liquid and the third treatment liquid in a wide range on the upper surface Wu of the substrate W without swinging. Therefore, for example, it is possible to simultaneously control the atmosphere on the upper surface Wu of the substrate W and reduce the variation in processing with respect to the upper surface Wu of the substrate W.
  • the liquid supply position of the first treatment liquid Lq1 includes the central portion of the upper surface Wu and its vicinity. As shown in FIGS. 9 (a) and 9 (b), the liquid supply position of the first treatment liquid Lq1 is closer to the outer peripheral end portion of the upper surface Wu than when it is in A1 (also referred to as the central region). First change unit 751v so that the discharge speed of the first processing liquid Lq1 discharged from the first liquid discharge unit 751n becomes smaller when it is in the region (also referred to as the end side region) A2.
  • the amount of the first treatment liquid Lq1 supplied from the supply source to the first liquid discharge unit 751n per unit time is reduced.
  • the center point of the upper surface Wu when the distance (radius) from the point (also referred to as the center point) on the rotation axis 72a on the upper surface Wu to the outer edge is D, and an integer of 3 or more is N, the center point of the upper surface Wu.
  • the region from to D / N can be the central region A1, and the region from the outer edge to the D / N of the upper surface Wu can be the end side region A2.
  • N is preferably 5 or more.
  • the liquid supply position of the first treatment liquid Lq1 can be scanned in a wide range from the central region A1 to the end side region A2 of the upper surface Wu of the substrate W. Further, for example, when the liquid supply position of the first treatment liquid Lq1 is within the central region A1, the supply amount of the first treatment liquid Lq1 per unit time on the upper surface Wu relatively increases, and the rotation axis of the substrate W. The rotation around 72a causes the first treatment liquid Lq1 to spread over a wide area on the upper surface Wu.
  • the supply amount and the discharge speed of the first treatment liquid Lq1 per unit time relative to the upper surface Wu are relatively high. It is lowered, and the liquid splash of the first treatment liquid Lq1 is less likely to occur in the plurality of chuck pins 724 holding the outer edge portion of the substrate W in the holding portion 720.
  • the liquid supply position of the second treatment liquid is higher than that when the liquid supply position of the second treatment liquid is in the central region A1 of the upper surface Wu.
  • the second supply source is provided by the second change unit 752v so that the discharge rate of the second processing liquid discharged from the second liquid discharge unit 752n becomes smaller when it is in the end side region A2 of the Wu. It is conceivable that the amount of the second treatment liquid supplied to the second liquid discharge unit 752n per unit time is reduced.
  • the control unit 9 has a liquid supply position of the third treatment liquid on the upper surface as compared with the case where the liquid supply position of the third treatment liquid is in the central region A1 of the upper surface Wu.
  • the third supply source is provided by the third change unit 753v so that the discharge rate of the second processing liquid discharged from the third liquid discharge unit 753n becomes smaller when it is in the end side region A2 of the Wu. It is conceivable that the amount of the third treatment liquid supplied to the third liquid discharge unit 753n per unit time is reduced. Even if these aspects are adopted, for example, scanning the liquid supply positions of the second treatment liquid and the third treatment liquid in a wide range from the central region A1 to the end side region A2 of the upper surface Wu of the substrate W is performed. In addition, the second treatment liquid and the third treatment liquid are less likely to splash on the plurality of chuck pins 724 holding the outer edge portion of the substrate W in the holding portion 720.
  • control unit 9 increases or decreases the supply amount of the first processing liquid Lq1 from the first supply source to the first liquid discharge unit 751n per unit time by the first change unit 751v, thereby increasing or decreasing the supply amount of the substrate W.
  • the liquid supply position on the upper surface Wu may be reciprocated a plurality of times between the central region A1 and the end side region A2. Thereby, for example, by scanning the liquid supply position of the first processing liquid Lq1 a plurality of times in a wide range of the upper surface Wu of the substrate W, it is possible to further reduce the variation in the processing with respect to the upper surface Wu of the substrate W.
  • the control unit 9 increases or decreases the supply amount of the second treatment liquid from the second supply source to the second liquid discharge unit 752n per unit time by the second change unit 752v. Then, the liquid supply position on the upper surface Wu of the substrate W may be reciprocated a plurality of times between the central region A1 and the end side region A2.
  • the control unit 9 increases or decreases the supply amount of the third treatment liquid from the third supply source to the third liquid discharge unit 753n per unit time by the third change unit 753v. Then, the liquid supply position on the upper surface Wu of the substrate W may be reciprocated a plurality of times between the central region A1 and the end side region A2.
  • the time required to change the value and the opening, the maximum and minimum values of the opening (number of pulses, etc.) of the second changing unit 752v related to the second liquid discharging unit 752n, the time required to change the opening, and the third is possible if the maximum and minimum values of the opening degree (number of pulses, etc.) of the third changing unit 753v related to the liquid discharging unit 753n and the time required for changing the opening degree are specified.
  • the flow rate of the processing liquid may be specified together with the opening degree (number of pulses, etc.).
  • the first treatment liquid Lq1 passes through the space between the upper surface Wu of the substrate W and the atmosphere control member 74 (here, the lower surface 74b) on the upper surface.
  • the first treatment liquid Lq1 is discharged so as to land on Wu.
  • the first liquid discharge unit 751n is shaken while more strictly controlling the atmosphere on the upper surface Wu of the substrate W.
  • the liquid supply position of the first treatment liquid Lq1 can be scanned over a wide range of the upper surface Wu of the substrate W without moving.
  • the second treatment liquid passes through the space between the upper surface Wu of the substrate W and the atmosphere control member 74 (here, the lower surface 74b) and the upper surface Wu.
  • the second treatment liquid is discharged so as to land on the liquid, and the third liquid discharge unit 753n creates a space between the upper surface Wu of the substrate W and the atmosphere control member 74 (here, the lower surface 74b).
  • the third treatment liquid is discharged so as to pass through and land on the upper surface Wu.
  • the atmosphere control member 74 faces a wide range of the upper surface Wu of the substrate W
  • the atmosphere on the upper surface Wu of the substrate W is controlled more strictly, and the second liquid discharge unit 752n and the second liquid discharge unit 752n and the first.
  • the liquid supply positions of the second treatment liquid and the third treatment liquid can be scanned over a wide range of the upper surface Wu of the substrate W without swinging the three-liquid discharge unit 753n.
  • the first discharge port 751o is arranged at a position higher than the upper surface Wu in the vertical direction and lower than the lower surface 74b of the atmosphere control member 74, and is directed toward the upper surface Wu. If the 1 treatment liquid Lq1 is discharged, the first treatment liquid Lq1 can be supplied over a wide range of the upper surface Wu of the substrate W while controlling the atmosphere on the substrate W by the atmosphere control member 74. Further, for example, the second treatment liquid is directed in the direction along the upper surface Wu in a state where the second discharge port 752o is arranged at a position higher than the upper surface Wu and lower than the lower surface 74b of the atmosphere control member 74 in the vertical direction.
  • the second treatment liquid can be supplied to a wide range of the upper surface Wu of the substrate W while controlling the atmosphere on the substrate W by the atmosphere control member 74.
  • the third treatment liquid is directed in the direction along the upper surface Wu in a state where the third discharge port 753o is arranged at a position higher than the upper surface Wu and lower than the lower surface 74b of the atmosphere control member 74 in the vertical direction. Is discharged, the third treatment liquid can be supplied to a wide range of the upper surface Wu of the substrate W while controlling the atmosphere on the substrate W by the atmosphere control member 74.
  • FIG. 10 is a diagram schematically showing a direction in which the first treatment liquid Lq1 is discharged from the first liquid discharge unit 751n onto the upper surface Wu of the substrate W.
  • FIG. 10A is a side view schematically showing a direction in which the first treatment liquid Lq1 is discharged from the first liquid discharge unit 751n onto the upper surface Wu of the substrate W.
  • FIG. 10B is a vertical cross-sectional view schematically showing the structure of the first liquid discharge portion 751n.
  • a preset direction (also referred to as a discharge direction) 75d at which the first discharge port 751o discharges the first treatment liquid Lq1 is indicated by a two-dot chain arrow. There is.
  • the first liquid discharge unit 751n supplies the first treatment liquid Lq1 to the upper surface Wu of the substrate W
  • the first discharge port 751o with reference to the upper surface Wu
  • the height in the vertical direction is H
  • the distance between the virtual rotation shaft 72a and the first discharge port 751o in the horizontal direction is R
  • the virtual horizontal plane passing through the first discharge port 751o and the first discharge port 751o are the first. 1
  • ⁇ be the angle formed by the direction (discharge direction) 75d for discharging the treatment liquid Lq1.
  • the angle ⁇ shows a positive value when the discharge direction 75d is downward from the horizontal direction
  • the angle ⁇ shows a negative value when the discharge direction 75d is upward from the horizontal direction. Shall be.
  • the relational expression of 0 ⁇ ⁇ ⁇ tan -1 (H / R) is satisfied, a virtual of the upper surface Wu of the substrate W is considered in consideration of the influence of gravity on the first treatment liquid Lq1.
  • the first treatment liquid Lq1 can be easily supplied to the portion on the rotating shaft 72a.
  • the height of the second discharge port 752o in the vertical direction with respect to the upper surface Wu is set to H, which is virtual.
  • the horizontal distance between the rotating shaft 72a and the second discharge port 752o is R, and the virtual horizontal plane passing through the second discharge port 752o and the direction in which the second discharge port 752o discharges the second treatment liquid (discharge direction).
  • ⁇ be the angle formed by, and when the discharge direction is downward from the horizontal direction, the angle ⁇ shows a positive value, and when the discharge direction is upward from the horizontal direction, the angle ⁇ is negative.
  • the effect of gravity on the second treatment liquid is taken into consideration, and the upper surface Wu of the substrate W is formed.
  • the second treatment liquid can be easily supplied to the portion on the virtual rotation shaft 72a.
  • the height of the third discharge port 753o with respect to the upper surface Wu in the vertical direction is set to H, which is virtual.
  • the horizontal distance between the rotating shaft 72a and the third discharge port 753o is R, and the virtual horizontal plane passing through the third discharge port 753o and the direction in which the third discharge port 753o discharges the third treatment liquid (discharge direction).
  • ⁇ be the angle formed by, and when the discharge direction is downward from the horizontal direction, the angle ⁇ shows a positive value, and when the discharge direction is upward from the horizontal direction, the angle ⁇ is negative.
  • the effect of gravity on the third treatment liquid is taken into consideration, and the upper surface Wu of the substrate W is formed.
  • the third treatment liquid can be easily supplied to the portion on the virtual rotation shaft 72a.
  • the first liquid discharge portion 751n has a first tubular portion 75p1, a second tubular portion 75p2, and a third tubular portion 75p3.
  • the first tubular portion 75p1 is in a state of extending along the horizontal direction, for example, and has a first discharge port 751o at its tip.
  • the second tubular portion 75p2 is in a state of communicating with the first tubular portion 75p1 and extending upward from the first tubular portion 75p1, for example.
  • the third tubular portion 75p3 is, for example, in a state of communicating with the second tubular portion 75p2 and extending in the horizontal direction from the second tubular portion 75p2.
  • the first liquid discharge portion 751n has a third tubular portion 75p3, a second tubular portion 75p2, and a first tubular portion 75p1 from the first liquid supply path 751p toward the first discharge port 751o. It has a form in which it is connected so as to communicate in order. If such a configuration is adopted, for example, as shown in FIGS. 8A and 9A, the second tubular portion 75p2 inserts the gap between the guard 73 and the atmosphere control member 74. In this state, the first discharge port 751o can be arranged at a position for discharging the first treatment liquid Lq1 toward the direction along the upper surface Wu of the substrate W held by the holding portion 720.
  • the first tubular portion 75p1 extends along the preset discharge direction 75d and has the first discharge port 751o at the tip of the discharge direction 75d, the first discharge port The discharge direction 75d of the first treatment liquid Lq1 discharged from 751o can be stable.
  • a form is adopted in which the inner diameter of the first tubular portion 75p1 decreases toward the first discharge port 751o.
  • the second liquid discharge unit 752n may have the same form as the first liquid discharge unit 751n.
  • the second liquid discharge portion 752n has a first tubular portion 75p1, a second tubular portion 75p2, and a third tubular portion 75p3.
  • the first tubular portion 75p1 has a second discharge port 752o at the tip in a state of extending along the horizontal direction, and the second tubular portion 75p2 is attached to the first tubular portion 75p1.
  • the third tubular portion 75p3 is in a state of extending upward from the first tubular portion 75p1 in a communicating state, and the third tubular portion 75p3 is in a state of communicating with the second tubular portion 75p2 in the horizontal direction from the second tubular portion 75p2. It is in a state of extending toward.
  • the second liquid discharge portion 752n has the third tubular portion 75p3, the second tubular portion 75p2, and the first tubular portion 75p1 from the second liquid supply path 752p toward the second discharge port 752o. It has a form in which it is connected so as to communicate in order.
  • the second discharge port 752o is held by the holding portion 720 in a state where the second tubular portion 75p2 is inserted through the gap between the guard 73 and the atmosphere control member 74. It can be arranged at a position for discharging the second treatment liquid toward the direction along the upper surface Wu of the substrate W.
  • the first tubular portion 75p1 extends along the preset discharge direction 75d and has the second discharge port 752o at the tip of the discharge direction 75d, the second discharge port is provided.
  • the discharge direction 75d of the second treatment liquid discharged from 752o can be stable.
  • a form in which the inner diameter of the first tubular portion 75p1 decreases toward the first discharge port 751o is adopted.
  • the third liquid discharge unit 753n may have the same form as the first liquid discharge unit 751n.
  • the third liquid discharge portion 753n has a first tubular portion 75p1, a second tubular portion 75p2, and a third tubular portion 75p3.
  • the first tubular portion 75p1 has a third discharge port 753o at the tip in a state of extending along the horizontal direction, and the second tubular portion 75p2 is attached to the first tubular portion 75p1.
  • the third tubular portion 75p3 is in a state of extending upward from the first tubular portion 75p1 in a communicating state, and the third tubular portion 75p3 is in a state of communicating with the second tubular portion 75p2 in the horizontal direction from the second tubular portion 75p2. It is in a state of extending toward.
  • the third liquid discharge portion 753n has the third tubular portion 75p3, the second tubular portion 75p2, and the first tubular portion 75p1 from the third liquid supply path 753p toward the third discharge port 753o. It has a form in which it is connected so as to communicate in order.
  • the third discharge port 753o is held by the holding portion 720 in a state where the second tubular portion 75p2 is inserted through the gap between the guard 73 and the atmosphere control member 74. It can be arranged at a position for discharging the third treatment liquid toward the direction along the upper surface Wu of the substrate W.
  • the first tubular portion 75p1 extends along the preset discharge direction 75d and has the third discharge port 753o at the tip of the discharge direction 75d, the third discharge port is provided.
  • the discharge direction 75d of the third treatment liquid discharged from 753o can be stable.
  • a form in which the inner diameter of the first tubular portion 75p1 decreases toward the first discharge port 751o is adopted.
  • Operation of processing unit> 11 and 12 are flow charts showing an example of an operation flow of a series of substrate processing on the substrate W in the processing unit 7. This operation flow is realized by controlling the operation of the substrate processing device 1 by the control unit 9.
  • the substrate W to be processed for example, a substrate W having a thin film pattern formed on a surface which is a device forming surface is used.
  • the thin film pattern includes, for example, an insulating film such as a silicon oxide film.
  • the thin film pattern may include, for example, a conductive film such as an amorphous silicon film or a metal film into which impurities for lowering resistance have been introduced, or a polysilicon film, a silicon nitride film, or a BSG film (silicon oxide containing boron).
  • a laminated film in which a plurality of films such as a film) and a TEOS film (a silicon oxide film formed by a CVD method using TEOS (tetraethoxysilane)) is laminated may be included.
  • 13 to 19 are schematic side views for explaining an example of a series of substrate processing operations on the substrate W in the processing unit 7. In FIGS. 13 to 19, a part of the configuration of the processing unit 7 is omitted for convenience from the viewpoint of preventing the drawings from becoming complicated.
  • the first to third guard portions 731, 732, 733 are arranged in the descending position, and the blocking plate 741 is provided. It is in a state of being arranged at a separated position. Further, although not shown here, the first liquid discharge unit 751n is arranged at the first evacuation position, the second liquid discharge unit 752n is arranged at the second evacuation position, and the third liquid discharge unit 753n is arranged. It is in a state of being arranged at the third evacuation position.
  • the untreated substrate W is carried into the processing unit 7 by the second transport mechanism 8, and the surface, which is the device forming surface, is turned upward by the holding portion 720.
  • the substrate W is held in this state (step Sp1 in FIG. 11).
  • a step also referred to as a holding step
  • the device forming surface of the substrate W is the upper surface Wu.
  • the elevating drive unit 73m raises the first to third guard units 731, 732, 733 from the lowering position to the ascending position, and the rotating mechanism 722 raises the holding unit 720.
  • the rotation about the rotation axis 72a of the above is started (step Sp2).
  • the atmosphere control member 74 is lowered by the third moving mechanism 74m to arrange the blocking plate 741 at a close position (step Sp3).
  • the distance between the upper surface Wu of the substrate W and the lower surface 74b of the blocking plate 741 is, for example, about 10 mm.
  • the annular opening of the gas nozzle 745n in the atmosphere control member 74 and the plurality of gas discharge ports 746o are not directed toward the upper surface Wu of the substrate W. Start discharging the active gas.
  • the amount of the inert gas discharged from the atmosphere control member 74 toward the upper surface Wu of the substrate W is, for example, about 100 liters (100 L / min) per minute.
  • the first moving mechanism 751m advances the first liquid discharge unit 751n to the first discharge position.
  • the order of lowering the atmosphere control member 74, starting the discharge of the inert gas, and advancing the first liquid discharge unit 751n to the first discharge position may be appropriately set.
  • the flow rate control valve included in the first change unit 751v is opened, and the first treatment liquid Lq1 (chemical solution) is supplied from the first supply source toward the first liquid discharge unit 751n.
  • the first treatment liquid Lq1 (chemical solution) is discharged from the first liquid discharge unit 751n (step Sp4).
  • the chemical solution is supplied to the upper surface Wu of the substrate W, and the upper surface Wu of the substrate W is treated with the chemical solution (also referred to as chemical solution treatment).
  • DHF is used as a chemical solution.
  • step Sp4 the holding portion while supplying the inert gas onto the upper surface Wu from the atmosphere control member 74 located in a state of facing the upper surface Wu of the substrate W held in the holding portion 720 in a horizontal posture.
  • a step of supplying the first treatment liquid Lq1 onto the upper surface Wu by discharging the first treatment liquid Lq1 from the first liquid discharge unit 751n in the direction along the upper surface Wu while rotating the 720 (first treatment step). Also called) is carried out.
  • the first treatment liquid discharged from the first liquid discharge unit 751n of the upper surface Wu is changed by changing the discharge speed of the first treatment liquid Lq1 discharged from the first liquid discharge unit 751n.
  • the liquid supply position where Lq1 is supplied is changed.
  • the control unit 9 changes the supply amount of the first processing liquid Lq1 from the first supply source to the first liquid discharge unit 751n per unit time to the first change unit 751v, so that the first liquid The discharge speed of the first treatment liquid Lq1 discharged from the discharge unit 751n can be changed. Therefore, for example, while controlling the atmosphere on the upper surface Wu of the substrate W, the liquid supply position of the first treatment liquid Lq1 in a wide range of the upper surface Wu of the substrate W without swinging the first liquid discharge unit 751n. You can scan. As a result, for example, it is possible to simultaneously control the atmosphere on the upper surface Wu of the substrate W and reduce the variation in processing with respect to the upper surface Wu of the substrate W.
  • FIG. 14 (b) shows an example of a state in which the liquid supply position of the first treatment liquid Lq1 is within the central region A1 of the upper surface Wu
  • FIG. 14 (c) shows the first treatment liquid Lq1.
  • An example of a state in which the liquid supply position of No. 1 is in the end side region A2 of the upper surface Wu is shown.
  • the liquid supply position of the first treatment liquid Lq1 is the end portion of the upper surface Wu than when the liquid supply position of the first treatment liquid Lq1 is in the central region A1 of the upper surface Wu.
  • the first treatment liquid from the first supply source to the first liquid discharge unit 751n so that the discharge speed of the first treatment liquid Lq1 from the first liquid discharge unit 751n becomes smaller when it is in the side region A2.
  • the supply amount of Lq1 per unit time is reduced.
  • the liquid supply position of the first treatment liquid Lq1 can be scanned in a wide range from the central region A1 to the end side region A2 of the upper surface Wu of the substrate W.
  • the supply amount of the first treatment liquid Lq1 per unit time on the upper surface Wu relatively increases, and the rotation axis of the substrate W.
  • the rotation around 72a causes the first treatment liquid Lq1 to spread over a wide area on the upper surface Wu.
  • the supply amount and the discharge speed of the first treatment liquid Lq1 per unit time relative to the upper surface Wu are relatively high. It is less likely that the first treatment liquid Lq1 liquid splashes in the plurality of chuck pins 724 holding the outer edge portion of the substrate W in the holding portion 720.
  • the liquid supply position of the first treatment liquid Lq1 is increased or decreased by increasing or decreasing the supply amount of the first treatment liquid Lq1 from the first supply source to the first liquid discharge unit 751n per unit time. Is reciprocated a plurality of times between the inside of the central region A1 and the inside of the end side region A2, the liquid supply position of the first treatment liquid Lq1 can be scanned a plurality of times in a wide range of the upper surface Wu of the substrate W. It is possible to further reduce the variation in processing with respect to the upper surface Wu of the substrate W.
  • the first treatment liquid Lq1 discharged from the first liquid discharge unit 751n creates a space between the upper surface Wu of the substrate W and the atmosphere control member 74 (here, the lower surface 74b). If a configuration is adopted in which the liquid is applied to the upper surface Wu through the substrate W, the atmosphere on the upper surface Wu of the substrate W is controlled more strictly with the atmosphere control member 74 facing a wide range of the upper surface Wu of the substrate W. At the same time, the liquid supply position of the first treatment liquid Lq1 can be scanned over a wide range of the upper surface Wu of the substrate W without swinging the first liquid discharge portion 751n.
  • the first discharge port 751o for discharging the first treatment liquid Lq1 in the first liquid discharge unit 751n is arranged at a position higher than the upper surface Wu in the vertical direction. If it is arranged at a position lower than the lower surface 74b of the atmosphere control member 74, the first treatment liquid Lq1 is supplied to a wide range of the upper surface Wu of the substrate W while controlling the atmosphere on the substrate W by the atmosphere control member 74. be able to.
  • the first discharge port 751o is arranged at a position higher than the upper surface of the chuck pin 724 in the vertical direction, the first treatment liquid from the first discharge port 751o toward the upper surface Wu of the substrate W. The path of Lq1 is not easily blocked by the chuck pin 724.
  • the height of the first discharge port 751o in the vertical direction with respect to the upper surface Wu is set to H, and the rotation shaft 72a and the first Let R be the horizontal distance from the 1 discharge port 751o, and let ⁇ be the angle formed by the virtual horizontal plane passing through the first discharge port 751o and the discharge direction 75d in which the first discharge port 751o discharges the first treatment liquid Lq1. , When the angle ⁇ shows a positive value when the discharge direction 75d is downward from the horizontal direction, and the angle ⁇ shows a negative value when the discharge direction 75d is upward from the horizontal direction.
  • the first portion of the upper surface Wu of the substrate W up to the portion on the rotation axis 72a is the first in consideration of the influence of gravity on the first treatment liquid Lq1.
  • the treatment liquid Lq1 can be easily supplied.
  • the atmosphere control member 74 (here, the lower surface 74b) is located in a state of covering the upper surface Wu, and is inactive between the upper surface Wu of the substrate W and the atmosphere control member 74. If the gas is supplied, the atmosphere on the upper surface Wu of the substrate W can be strictly controlled.
  • the first treatment step for example, if the first guard portion 731 that receives the first treatment liquid Lq1 scattered from the upper surface Wu is arranged so as to surround the periphery of the holding portion 720 and the outer periphery of the substrate W, the first step is made.
  • the 1 guard portion 731 can receive and recover the first treatment liquid Lq1 scattered from the upper surface Wu of the substrate W.
  • the first liquid valve 747v is opened, and the fourth treatment liquid Lq4 (rinse liquid) begins to be supplied from the fourth supply source to the first central nozzle 747n, and as shown in FIG.
  • the supply of the fourth treatment liquid Lq4 (rinse liquid) from the central nozzle 747n onto the upper surface Wu of the substrate W is started (step Sp5).
  • the fourth treatment liquid Lq4 (rinse liquid) is supplied to the entire area of the upper surface Wu of the substrate W, and the first treatment liquid Lq1 (chemical liquid) adhering to the substrate W is supplied by the fourth treatment liquid Lq4 (rinse liquid).
  • a rinse treatment also called a rinse treatment
  • the first liquid discharge unit 751n is retracted from the first discharge position to the first retract position by the first movement mechanism 751 m.
  • the first liquid discharging portion 751n is raised from the first lower position to the first upper position by the first moving mechanism 751m, and the first liquid discharging portion 751n is further raised from the first inner position to the first outer position. Move.
  • Step Sp6 the second liquid discharge unit 752n is advanced to the second discharge position and the third liquid discharge unit 753n is advanced to the third discharge position by the second moving mechanism 752 m ( Step Sp6).
  • the first liquid valve 747v is closed and the fourth treatment liquid Lq4 (rinse liquid) is supplied from the fourth supply source to the first central nozzle 747n. Is stopped, and as shown in FIG. 15C, the supply of the fourth treatment liquid Lq4 (rinse liquid) from the first center nozzle 747n onto the upper surface Wu of the substrate W is terminated (step Sp7).
  • the elevating drive unit 73m further lowers the first guard unit 731 and the second guard unit 732 from the ascending position to the descending position.
  • the flow control valve included in the second change section 752v is opened, and the second treatment liquid Lq2 (solvent) is supplied from the second supply source toward the second liquid discharge section 752n, whereby FIG.
  • the second treatment liquid Lq2 (solvent) is discharged from the second liquid discharge unit 752n (step Sp8).
  • the fourth treatment liquid Lq4 (rinse liquid) adhering to the upper surface Wu of the substrate W is washed away by the second treatment liquid Lq2 (solvent) and replaced with the second treatment liquid Lq2 (solvent).
  • the flow rate control valve included in the second change unit 752v is closed, and the solvent discharge from the second liquid discharge unit 752n is stopped.
  • step Sp8 the holding portion while supplying the inert gas onto the upper surface Wu from the atmosphere control member 74 located in a state of facing the upper surface Wu of the substrate W held in the holding portion 720 in a horizontal posture.
  • a step of supplying the second treatment liquid Lq2 onto the upper surface Wu by discharging the second treatment liquid Lq2 from the second liquid discharge unit 752n in the direction along the upper surface Wu while rotating the 720 (second treatment step). ) Is implemented.
  • the second treatment liquid discharged from the second liquid discharge unit 752n of the upper surface Wu is changed by changing the discharge speed of the second treatment liquid Lq2 discharged from the second liquid discharge unit 752n.
  • the liquid supply position where Lq2 is supplied is changed.
  • the control unit 9 changes the supply amount of the second processing liquid Lq2 from the second supply source to the second liquid discharge unit 752n per unit time to the second change unit 752v, thereby changing the second liquid.
  • the discharge speed of the second treatment liquid Lq2 discharged from the discharge unit 752n can be changed. Therefore, for example, while controlling the atmosphere on the upper surface Wu of the substrate W, the liquid supply position of the second treatment liquid Lq2 in a wide range of the upper surface Wu of the substrate W without swinging the second liquid discharge unit 752n. You can scan. As a result, for example, it is possible to simultaneously control the atmosphere on the upper surface Wu of the substrate W and reduce the variation in processing with respect to the upper surface Wu of the substrate W.
  • FIG. 16A shows an example of a state in which the liquid supply position of the second treatment liquid Lq2 is within the central region A1 of the upper surface Wu
  • FIG. 16B shows the second treatment liquid Lq2.
  • An example of a state in which the liquid supply position of No. 1 is in the end side region A2 of the upper surface Wu is shown.
  • the liquid supply position of the second treatment liquid Lq2 is the end portion of the upper surface Wu as compared with the case where the liquid supply position of the second treatment liquid Lq2 is in the central region A1 of the upper surface Wu.
  • the second treatment liquid from the second supply source to the second liquid discharge part 752n so that the discharge speed of the second treatment liquid Lq2 from the second liquid discharge part 752n becomes smaller when it is in the side region A2.
  • the supply amount of Lq2 per unit time is reduced. Thereby, for example, the liquid supply position of the second treatment liquid Lq2 can be scanned in a wide range from the central region A1 to the end side region A2 of the upper surface Wu of the substrate W.
  • the supply amount of the second treatment liquid Lq2 per unit time on the upper surface Wu relatively increases, and the rotation axis of the substrate W.
  • the rotation around 72a causes the second treatment liquid Lq2 to spread over a wide area on the upper surface Wu.
  • the supply amount and the discharge speed of the second treatment liquid Lq2 per unit time relative to the upper surface Wu are relatively high. It is lowered, and the liquid splash of the second treatment liquid Lq2 is less likely to occur in the plurality of chuck pins 724 holding the outer edge portion of the substrate W in the holding portion 720.
  • the liquid supply position of the second treatment liquid Lq2 is increased or decreased by increasing or decreasing the supply amount of the second treatment liquid Lq2 from the second supply source to the second liquid discharge unit 752n per unit time. Is reciprocated a plurality of times between the inside of the central region A1 and the inside of the end side region A2, the liquid supply position of the second treatment liquid Lq2 can be scanned a plurality of times in a wide range of the upper surface Wu of the substrate W. It is possible to further reduce the variation in processing with respect to the upper surface Wu of the substrate W.
  • the second treatment liquid Lq2 discharged from the second liquid discharge unit 752n creates a space between the upper surface Wu of the substrate W and the atmosphere control member 74 (here, the lower surface 74b). If a configuration is adopted in which the liquid is applied to the upper surface Wu through the substrate W, the atmosphere on the upper surface Wu of the substrate W is controlled more strictly with the atmosphere control member 74 facing a wide range of the upper surface Wu of the substrate W. At the same time, the liquid supply position of the second treatment liquid Lq2 can be scanned over a wide range of the upper surface Wu of the substrate W without swinging the second liquid discharge portion 752n.
  • the second discharge port 752o for discharging the second treatment liquid Lq2 in the second liquid discharge unit 752n is arranged at a position higher than the upper surface Wu in the vertical direction. If it is arranged at a position lower than the lower surface 74b of the atmosphere control member 74, the second treatment liquid Lq2 is supplied over a wide range of the upper surface Wu of the substrate W while controlling the atmosphere on the substrate W by the atmosphere control member 74. be able to.
  • the second discharge port 752o is arranged at a position higher than the upper surface of the chuck pin 724 in the vertical direction, the second treatment liquid from the second discharge port 752o toward the upper surface Wu of the substrate W. The path of Lq2 is not easily blocked by the chuck pin 724.
  • the height of the second discharge port 752o in the vertical direction with respect to the upper surface Wu is set to H, and the rotating shaft 72a and the second 2 Let R be the horizontal distance from the discharge port 752o, and let ⁇ be the angle formed by the virtual horizontal plane passing through the second discharge port 752o and the discharge direction in which the second discharge port 752o discharges the second treatment liquid Lq2. 0 ⁇ when the angle ⁇ shows a positive value when the discharge direction is downward from the horizontal direction and the angle ⁇ shows a negative value when the discharge direction is upward from the horizontal direction.
  • the first treatment liquid Lq1 up to the portion on the rotation shaft 72a of the upper surface Wu of the substrate W in consideration of the influence of gravity on the second treatment liquid Lq2. Can be easily supplied.
  • the atmosphere control member 74 (here, the lower surface 74b) is located in a state of covering the upper surface Wu of the substrate W, and is inactive between the upper surface Wu and the atmosphere control member 74. If the gas is supplied, the atmosphere on the upper surface Wu of the substrate W can be strictly controlled.
  • the second treatment step for example, if the third guard portion 733 that receives the second treatment liquid Lq2 scattered from the upper surface Wu is arranged so as to surround the periphery of the holding portion 720 and the outer periphery of the substrate W, the second treatment step is performed.
  • the 3 guard unit 733 can receive and collect the second treatment liquid Lq2 scattered from the upper surface Wu of the substrate W.
  • the elevating drive unit 73m raises the second guard unit 732 from the lowering position to the ascending position, and the third moving mechanism 74m further lowers the atmosphere control member 74.
  • the blocking plate 741 is arranged at a position (also referred to as a closest position) closer to the upper surface Wu of the substrate W (step Sp9).
  • the distance between the upper surface Wu of the substrate W and the lower surface 74b of the blocking plate 741 is, for example, about 3 mm.
  • the flow rate control valve included in the third change unit 753v is opened, and the third treatment liquid Lq3 (hydrophobicized liquid) is supplied from the third supply source toward the third liquid discharge unit 753n.
  • the third treatment liquid Lq3 hydrophobicized liquid
  • the hydrophobic liquid is supplied to the upper surface Wu of the substrate W, so that the solvent adhering to the substrate W is replaced with the hydrophobic liquid, and a protective film (hydrophobicity) having low wettability is provided on the upper surface Wu of the substrate W.
  • a treatment for forming a protective film (also called a protective film) is performed.
  • a protective film also called a protective film
  • the hydrophobic protective film for example, the thin film pattern on the upper surface W of the substrate W is covered with the hydrophobic protective film.
  • the hydrophobizing treatment for example, the substrate W may be heated by a heater or the like built in the spin base 723 so that the hydrophobizing treatment can be performed better.
  • the flow rate control valve included in the third change unit 753v is closed, and the discharge of the hydrophobic liquid from the third liquid discharge unit 753n is stopped.
  • step Sp10 the holding portion while supplying the inert gas onto the upper surface Wu from the atmosphere control member 74 located in a state of facing the upper surface Wu of the substrate W held in the holding portion 720 in a horizontal posture.
  • a step of supplying the third treatment liquid Lq3 onto the upper surface Wu by discharging the third treatment liquid Lq3 from the third liquid discharge unit 753n in the direction along the upper surface Wu while rotating the 720 (third treatment step). ) Is implemented.
  • the third treatment liquid discharged from the third liquid discharge unit 753n of the upper surface Wu is changed by changing the discharge speed of the third treatment liquid Lq3 discharged from the third liquid discharge unit 753n.
  • the liquid supply position where Lq3 is supplied is changed.
  • the control unit 9 changes the supply amount of the third processing liquid Lq3 from the third supply source to the third liquid discharge unit 753n per unit time to the third change unit 753v, thereby changing the third liquid.
  • the discharge speed of the third processing liquid Lq3 discharged from the discharge unit 753n can be changed. Therefore, for example, while controlling the atmosphere on the upper surface Wu of the substrate W, the liquid supply position of the third treatment liquid Lq3 in a wide range of the upper surface Wu of the substrate W without swinging the third liquid discharge unit 753n. You can scan. As a result, for example, it is possible to simultaneously control the atmosphere on the upper surface Wu of the substrate W and reduce the variation in processing with respect to the upper surface Wu of the substrate W.
  • FIG. 17A shows an example of a state in which the liquid supply position of the third treatment liquid Lq3 is within the central region A1 of the upper surface Wu
  • FIG. 17B shows the third treatment liquid Lq3.
  • An example of a state in which the liquid supply position of No. 1 is in the end side region A2 of the upper surface Wu is shown.
  • the liquid supply position of the third treatment liquid Lq3 is the end portion of the upper surface Wu than when the liquid supply position of the third treatment liquid Lq3 is in the central region A1 of the upper surface Wu.
  • the supply amount of Lq3 per unit time is reduced. Thereby, for example, the liquid supply position of the third treatment liquid Lq3 can be scanned in a wide range from the central region A1 to the end side region A2 of the upper surface Wu of the substrate W.
  • the supply amount of the third treatment liquid Lq3 per unit time relative to the upper surface Wu increases, and the rotation axis of the substrate W.
  • the rotation around 72a causes the third treatment liquid Lq3 to spread over a wide area on the upper surface Wu.
  • the supply amount and the discharge speed of the third treatment liquid Lq3 per unit time relative to the upper surface Wu are relatively high. It is lowered, and the liquid splash of the third treatment liquid Lq3 is less likely to occur in the plurality of chuck pins 724 holding the outer edge portion of the substrate W in the holding portion 720.
  • the liquid supply position of the third treatment liquid Lq3 is increased or decreased by increasing or decreasing the supply amount of the third treatment liquid Lq3 from the third supply source to the third liquid discharge unit 753n per unit time. Is reciprocated a plurality of times between the inside of the central region A1 and the inside of the end side region A2, the liquid supply position of the third treatment liquid Lq3 can be scanned a plurality of times in a wide range of the upper surface Wu of the substrate W. It is possible to further reduce the variation in processing with respect to the upper surface Wu of the substrate W.
  • the third treatment liquid Lq3 discharged from the third liquid discharge unit 753n creates a space between the upper surface Wu of the substrate W and the atmosphere control member 74 (here, the lower surface 74b). If a configuration is adopted in which the liquid is applied to the upper surface Wu through the substrate W, the atmosphere on the upper surface Wu of the substrate W is controlled more strictly with the atmosphere control member 74 facing a wide range of the upper surface Wu of the substrate W. At the same time, the liquid supply position of the third treatment liquid Lq3 can be scanned over a wide range of the upper surface Wu of the substrate W without swinging the third liquid discharge portion 753n.
  • the third discharge port 753o for discharging the third treatment liquid Lq3 in the third liquid discharge unit 753n is arranged at a position higher than the upper surface Wu in the vertical direction. If it is arranged at a position lower than the lower surface 74b of the atmosphere control member 74, the third treatment liquid Lq3 is supplied over a wide range of the upper surface Wu of the substrate W while controlling the atmosphere on the substrate W by the atmosphere control member 74. be able to.
  • the third discharge port 753o is arranged at a position higher than the upper surface of the chuck pin 724 in the vertical direction, the third treatment liquid from the third discharge port 753o toward the upper surface Wu of the substrate W. The path of Lq3 is not easily blocked by the chuck pin 724.
  • the height of the third discharge port 753o in the vertical direction with respect to the upper surface Wu is set to H, and the rotating shaft 72a and the third 3
  • R be the horizontal distance from the discharge port 753o
  • ⁇ be the angle formed by the virtual horizontal plane passing through the third discharge port 753o and the discharge direction in which the third discharge port 753o discharges the third treatment liquid Lq3.
  • the atmosphere control member 74 (here, the lower surface 74b) is located in a state of covering the upper surface Wu of the substrate W, and is inactive between the upper surface Wu and the atmosphere control member 74. If the gas is supplied, the atmosphere on the upper surface Wu of the substrate W can be strictly controlled.
  • the third treatment step for example, if the second guard portion 732 that receives the third treatment liquid Lq3 scattered from the upper surface Wu is arranged so as to surround the periphery of the holding portion 720 and the outer periphery of the substrate W, the third treatment step is performed.
  • the 2 guard unit 732 can receive and recover the third treatment liquid Lq3 scattered from the upper surface Wu of the substrate W.
  • the second liquid valve 748v is opened, the fifth treatment liquid Lq5 (hydrophobicized liquid) is supplied from the fifth supply source to the second central nozzle 748n, and as shown in FIG.
  • the fifth treatment liquid Lq5 (hydrophobicized liquid) is discharged downward from the discharge port of the two central nozzles 748n (step Sp11 in FIG. 12).
  • the hydrophobizing solution is supplied to the entire surface of the upper surface Wu of the substrate W, and the solvent adhering to the substrate W is replaced with the hydrophobizing solution.
  • the substrate W may be heated by a heater or the like built in the spin base 723.
  • the second liquid valve 748v is closed and the discharge of the hydrophobic liquid from the second central nozzle 748n is stopped.
  • the second liquid discharge unit 752n is retracted from the second discharge position to the second retract position and the third liquid discharge portion 753n is retracted from the third discharge position to the third retract position by the second moving mechanism 752 m. ..
  • the second moving mechanism 752m raises the second liquid discharge unit 752n from the second lower position to the second upper position and raises the third liquid discharge part 753n from the third lower position to the third upper position.
  • the second liquid discharge portion 752n is moved from the second inner position to the second outer position, and the third liquid discharge portion 753n is moved from the third inner position to the third outer position.
  • the elevating drive unit 73m lowers the second guard unit 732 from the ascending position to the descending position (step Sp12).
  • the third liquid valve 749v is opened, the sixth treatment liquid Lq6 (solvent) is supplied from the sixth supply source to the third center nozzle 749n, and the third center is as shown in FIG. 18 (b).
  • the sixth treatment liquid Lq6 (solvent) is discharged downward from the discharge port of the nozzle 749n (step Sp13).
  • the hydrophobizing liquid adhering to the upper surface Wu of the substrate W is replaced with the solvent.
  • the third liquid valve 749v is closed and the discharging of the solvent from the third central nozzle 749n is stopped.
  • a drying treatment for drying the substrate W is performed (step Sp14).
  • the control unit 9 controls the rotation mechanism 722 to rotate the substrate W at a high rotation speed (for example, 2500 rpm or more).
  • a high rotation speed for example, 2500 rpm or more.
  • the rotation mechanism 722 stops the rotation of the substrate W by the holding unit 720 (step Sp15), as shown in FIG. 19A. Further, here, as shown in FIG. 19A, by closing the first gas valve 745v and the second gas valve 746v, the inert gas is discharged from the atmosphere control member 74 toward the upper surface Wu of the substrate W. At the same time as stopping, the atmosphere control member 74 is raised by the third moving mechanism 74m to arrange the blocking plate 741 at a separated position. Further, here, as shown in FIG. 19A, the elevating drive unit 73m lowers the third guard unit 733 from the ascending position to the descending position.
  • the order of stopping the rotation of the holding unit 720, raising the atmosphere control member 74, stopping the discharge of the inert gas, and lowering the third guard unit 733 may be appropriately set.
  • the holding of the substrate W by the holding unit 720 is released, and the processed substrate W is carried out from the processing unit 7 by the second transport mechanism 8 (step). Sp16).
  • the substrate processing apparatus 1 for example, from the atmosphere control member 74 located in a state of facing the upper surface Wu of the substrate W held in a horizontal posture by the holding portion 720. While supplying the inert gas onto the upper surface Wu, while rotating the holding portion 720, the first treatment liquid Lq1 is directed from the first discharge port 751o of the first liquid discharge unit 751n toward the direction along the upper surface Wu of the substrate W. Is discharged to supply the first treatment liquid Lq1 onto the upper surface Wu.
  • the supply amount of the first treatment liquid Lq1 from the first supply source to the first liquid discharge unit 751n per unit time is changed, and the first treatment liquid Lq1 discharged from the first liquid discharge unit 751n is changed.
  • the liquid supply position where the first processing liquid Lq1 discharged from the first liquid discharge portion 751n on the upper surface Wu of the substrate W is changed is changed.
  • the atmosphere on the upper surface Wu of the substrate W is satisfactorily controlled by the supply of the inert gas from the atmosphere control member 74, and the upper surface of the substrate W is not shaken without swinging the first liquid discharge portion 751n. It is possible to scan the liquid supply position of the first treatment liquid Lq1 over a wide range of Wu.
  • the substrate processing apparatus 1 for example, from the atmosphere control member 74 located on the upper surface Wu in a state of facing the upper surface Wu of the substrate W held in a horizontal posture by the holding portion 720.
  • the second treatment liquid Lq2 is discharged from the second discharge port 752o of the second liquid discharge part 752n toward the direction along the upper surface Wu of the substrate W while rotating the holding portion 720 while supplying the inert gas to the As a result, the second treatment liquid Lq2 is supplied onto the upper surface Wu.
  • the supply amount of the second treatment liquid Lq2 from the second supply source to the second liquid discharge unit 752n per unit time is changed, and the second treatment liquid Lq2 discharged from the second liquid discharge unit 752n is changed.
  • the liquid supply position where the second treatment liquid Lq2 discharged from the second liquid discharge portion 752n on the upper surface Wu of the substrate W is changed is changed.
  • the atmosphere on the upper surface Wu of the substrate W is satisfactorily controlled by the supply of the inert gas from the atmosphere control member 74, and the upper surface of the substrate W is not shaken without swinging the second liquid discharge portion 752n. It is possible to scan the liquid supply position of the second treatment liquid Lq2 over a wide range of Wu.
  • the substrate processing apparatus 1 for example, from the atmosphere control member 74 located on the upper surface Wu in a state of facing the upper surface Wu of the substrate W held in a horizontal posture by the holding portion 720.
  • the third treatment liquid Lq3 is discharged from the third discharge port 753o of the third liquid discharge unit 753n toward the direction along the upper surface Wu of the substrate W while rotating the holding portion 720 while supplying the inert gas to the As a result, the third treatment liquid Lq3 is supplied onto the upper surface Wu.
  • the supply amount of the third treatment liquid Lq3 from the third supply source to the third liquid discharge unit 753n per unit time is changed, and the third treatment liquid Lq3 discharged from the third liquid discharge unit 753n is changed.
  • the liquid supply position where the third processing liquid Lq3 discharged from the third liquid discharge portion 753n in the upper surface Wu of the substrate W is changed is changed.
  • the atmosphere on the upper surface Wu of the substrate W is satisfactorily controlled by the supply of the inert gas from the atmosphere control member 74, and the upper surface of the substrate W is not shaken without swinging the third liquid discharge portion 753n. It is possible to scan the liquid supply position of the third treatment liquid Lq3 over a wide range of Wu.
  • the atmosphere control member 74 supplies the inert gas above the substrate W in a state of facing the central region A1 of the upper surface W of the substrate W, thereby causing the upper surface Wu. It may be replaced with a small atmosphere control member 74A that forms an air flow flowing along the. In this case, for example, in any of the first to third processing steps described above, the atmosphere control member 74A is located in a state of facing the central region A1 of the upper surface Wu of the substrate W, and is located on the substrate W. By supplying the inert gas upward, an air flow flowing along the upper surface Wu may be formed.
  • the diameter of the lower surface 74b of the atmosphere control member 74A facing the upper surface Wu of the substrate W is smaller than the diameter of the upper surface Wu of the substrate W. More specifically, for example, it is assumed that the diameter of the upper surface Wu of the substrate W is about 300 mm and the diameter of the lower surface 74b of the atmosphere control member 74A is about 95 mm to 120 mm. If such a configuration is adopted, for example, the entire area of the upper surface Wu of the substrate W is not covered by the atmosphere control member 74A, and the first liquid discharge portion 751n is set to the first retract position and the first discharge position. Can be easily moved between. Further, for example, the second liquid discharge unit 752n can be easily moved between the second evacuation position and the second discharge position, and the third liquid discharge unit 753n can be moved between the third evacuation position and the third discharge position. It can be easily moved between.
  • FIG. 20 is a side view schematically showing a configuration example of the processing unit 7 according to the second embodiment.
  • FIG. 21 is a vertical cross-sectional view schematically showing a configuration example of the atmosphere control member 74A according to the second embodiment.
  • the atmosphere control member 74A is based on, for example, the atmosphere control member 74 according to the first embodiment, and the blocking plate 741, the support shaft 742, and the gas nozzle 745n have a gas nozzle 745nA. It has a form substituted with. In other words, the atmosphere control member 74A has a central nozzle group 74n and a gas nozzle 745nA.
  • the gas nozzle 745nA discharges, for example, an inert gas such as nitrogen gas above the upper surface Wu of the substrate W held by the holding portion 720. As a result, the upper part of the substrate W can be covered with a nitrogen gas atmosphere.
  • a first gas supply path 745p provided with a first gas valve 745v in the middle is connected to the gas nozzle 745nA.
  • the gas nozzle 745nA is integrally coupled to the central nozzle group 74n. Therefore, the atmosphere control member 74A has a function of discharging the rinse liquid as the fourth treatment liquid Lq4, the hydrophobic liquid as the fifth treatment liquid Lq5, and the solvent as the sixth treatment liquid Lq6 by the central nozzle group 74n, and nitrogen gas. It has a function of discharging an inert gas such as.
  • the gas nozzle 745nA has a cylindrical nozzle body 745 nm having a flange portion 745 nf at the lower end.
  • the outermost diameter of the nozzle body of 745 nm is, for example, about 95 mm to 120 mm.
  • the upper gas discharge port 746o1 and the lower gas discharge port 746o2 are annularly opened outward on the outer peripheral surface which is the side surface of the flange portion 745nf.
  • the upper gas discharge port 746o1 and the lower gas discharge port 746o2 are arranged vertically at intervals.
  • a central gas discharge port 745o is arranged on the lower surface 74b of the nozzle body 745 nm.
  • Gas introduction ports 745i1 and 745i2 to which the inert gas is supplied from the first gas supply path 745p are formed in the nozzle body 745 nm.
  • a gas supply path for individually supplying the inert gas to the gas introduction ports 745i1 and 745i2 may be connected.
  • a tubular gas flow path 745nr connecting the gas introduction port 745i2, the upper gas discharge port 746o1 and the lower gas discharge port 746o2 is formed.
  • a tubular gas flow path 745nw communicating with the gas introduction port 745i1 is formed around the central nozzle group 74n.
  • a buffer space 745nb communicates with the lower part of the gas flow path 745nw.
  • the buffer space 745nb further communicates with the space 745ns below the punching plate 745np via the punching plate 745np.
  • the lower part of this space 745ns is the central gas discharge port 745o.
  • the inert gas introduced from the gas introduction port 745i2 is supplied to the upper gas discharge port 746o1 and the lower gas discharge port 746o2 via the gas flow path 745nr, and radiates from the upper gas discharge port 746o1 and the lower gas discharge port 746o2. Is discharged to. As a result, two vertically overlapping radial airflows (also referred to as radial airflows) are formed above the substrate W.
  • the inert gas introduced from the gas introduction port 745i1 is stored in the buffer space 745nb via the gas flow path 745nw, further diffused through the punching plate 745np, and then passed through the space 745ns to the central gas discharge port.
  • the gas is discharged downward from the 745o toward the upper surface Wu of the substrate W.
  • the inert gas collides with the upper surface Wu of the substrate W and changes its direction to form a radial air flow of the inert gas above the substrate W.
  • the three-layer radial airflow is formed by the radial airflow formed by the inert gas discharged from the central gas discharge port 745o and the two-layer radial airflow discharged from the upper gas discharge port 746o1 and the lower gas discharge port 746o2. Is formed above the substrate W.
  • the upper surface Wu of the substrate W is protected by the three layers of radial airflow. For example, when the substrate W is rotated at high speed around the rotation shaft 72a, the upper surface W of the substrate W is protected by the radial airflow of the three layers of inert gas, so that the upper surface Wu of the substrate W becomes oxygen and droplets. And protected from moisture such as mist.
  • the lower surface 74b of the atmosphere control member 74A is separated from the upper surface Wu of the substrate W held by the holding portion 720 at a position (proximity position) close to the upper surface Wu of the substrate W held by the holding portion 720. It can be arranged at a vertical position (separated position).
  • the distance between the lower surface 74b and the upper surface Wu is increased from, for example, 3 mm. It can be set to about 10 mm.
  • the central nozzle group 74n extends vertically through the gas flow path 745nw, the buffer space 745nb, and the punching plate 745np. Each discharge port at the lower end of the central nozzle group 74n is located below the punching plate 745np.
  • the lower surface of the central nozzle group 74n is located at the same height as the lower surface 74b of the atmosphere control member 74A or above the lower surface 74b.
  • the third moving mechanism 74m swings the atmosphere control member 74A on the holding portion 720 by rotating the arm 743 around a virtual rotation shaft 74a along the vertical direction by a motor or the like. It may be possible to make it. Further, for example, the third moving mechanism 74m may be able to retract the atmosphere control member 74A from the holding portion 720 by rotating the arm 743 around the rotation shaft 74a by a motor or the like.
  • FIG. 22 is a vertical cross-sectional view schematically showing the modes of the first to third liquid discharge portions 751n, 752n, and 753n according to the third embodiment.
  • the second tubular portion 75p2 has a tubular tip portion 75p4 extending along the vertical direction.
  • the tip portion 75p4 extending along the vertical direction may have a first discharge port 751o that opens in the horizontal direction.
  • the tip portion 75p4 extending along the vertical direction may have a second discharge port 752o that opens in the horizontal direction.
  • the tip portion 75p4 extending along the vertical direction may have a third discharge port 753o that opens in the horizontal direction.
  • the control unit 9 is provided with at least one guard unit of the first to third guard units 731, 732, 733 and the atmosphere control members 74, 74A by the first movement mechanism 751 m, which is an example of the third drive unit.
  • the first liquid discharge portion 751n may be moved up and down along the vertical direction so that the tip portion 75p4 is inserted and removed with respect to the gap of
  • the two-liquid discharge unit 752n and the third liquid discharge unit 753n may be moved up and down along the vertical direction.
  • the upper surface of the guard 73 is arranged at a position higher than the lower surface 74b of the atmosphere control members 74, 74A, and a gap between the guard 73 and the atmosphere control members 74, 74A is formed. Even if it is narrow, the second tubular portion 75p2 of the first liquid discharge portion 751n, the second liquid discharge portion 752n, and the third liquid discharge portion 753n is provided with respect to the gap between the guard 73 and the atmosphere control members 74, 74A. It can be easily inserted and removed.
  • the first liquid discharge unit 751n can be easily moved between the first evacuation position and the first discharge position.
  • the second liquid discharge unit 752n can be easily moved between the second evacuation position and the second discharge position, and the third liquid discharge unit 753n can be moved to the third evacuation position and the third discharge position. Can be easily moved between.
  • FIG. 23 is a plan view schematically showing an example of the internal configuration of the processing unit 7 according to the fourth embodiment.
  • the guard 73 has an inner peripheral edge portion having a recess 73r recessed in a direction away from the atmosphere control member 74 when viewed in a plan view or a plan view in a downward direction. It may have 73i. From another point of view, the guard 73 may have a recess 73r recessed in the inner peripheral edge portion 73i in a direction away from the rotation shaft 72a.
  • the guard 73 has two recesses 73r.
  • the two recesses 73r include a first recess 73r1 for the first liquid discharge portion 751n and a second recess 73r2 for the second liquid discharge portion 752n and the third liquid discharge portion 753n.
  • the control unit 9 inserts the second tubular portion 75p2 into the space inside the first recess 73r1 by lowering the first liquid discharge portion 751n by the first moving mechanism 751m as an example of the third drive unit.
  • the second tubular portion 75p2 is moved upward from the space in the first recess 73r1 by raising the first liquid discharge portion 751n by the operation of moving (lowering operation) and the first moving mechanism 751m as an example of the third driving unit.
  • At least one of the actions to be made may be executed.
  • control unit 9 lowers the second liquid discharge unit 752n and the third liquid discharge unit 753n by the second moving mechanism 752 m as an example of the third drive unit, so that each second tubular portion 75p2 is seconded.
  • the second liquid discharge unit 752n and the third liquid discharge unit 753n are raised by the operation of inserting into the space in the recess 73r2 (lowering operation) and the second moving mechanism 752 m as an example of the third drive unit. At least one of the operations of moving the tubular portion 75p2 upward from the space in the second recess 73r2 (ascending operation) may be executed.
  • the upper surface of the guard 73 is arranged at a position higher than the lower surface 74b of the atmosphere control members 74, 74A, and a gap between the guard 73 and the atmosphere control members 74, 74A is formed. Even if it is narrow, the second tubular portion 75p2 of the first liquid discharge portion 751n, the second liquid discharge portion 752n, and the third liquid discharge portion 753n is provided with respect to the gap between the guard 73 and the atmosphere control members 74, 74A. It can be easily inserted and removed.
  • the first liquid discharge unit 751n can be easily moved between the first evacuation position and the first discharge position.
  • the second liquid discharge unit 752n can be easily moved between the second evacuation position and the second discharge position, and the third liquid discharge unit 753n can be moved to the third evacuation position and the third discharge position. Can be easily moved between.
  • the first liquid discharge portion 751n is rotated by the rotation shaft 72a by the first moving mechanism 751m. It may be moved in the direction of approaching and separating from. Thereby, for example, even when the first liquid discharge portion 751n has the first tubular portion 75p1, the first discharge port 751o can be inserted and removed with respect to the space between the atmosphere control members 74, 74A and the holding portion 720. can.
  • the second liquid discharge portion 752n and the second liquid discharge portion 752n are provided by the second moving mechanism 752m.
  • the three-liquid discharge unit 753n may be moved in the direction of approaching and separating from the rotating shaft 72a.
  • the second discharge port 752o and the third discharge port 753o are held together with the atmosphere control members 74 and 74A. It can be inserted and removed from the space between the 720 and the 720.
  • FIG. 24 is a side view schematically showing the arrangement of the first to third liquid discharge portions 751n, 752n, 753n in the processing unit 7 according to the fifth embodiment.
  • FIG. 24 (a) shows a state in which the first treatment liquid Lq1 is discharged from the first liquid discharge unit 751n to the central region A1 on the upper surface Wu of the substrate W
  • FIG. 24 (b) shows. It is shown that the first treatment liquid Lq1 is discharged from the first liquid discharge portion 751n to the end side region A2 on the upper surface Wu of the substrate W.
  • the first liquid discharge portion 751n may be integrally configured with the first guard portion 731, or the second liquid discharge portion 752n may be integrally configured with the third guard portion 733.
  • the third liquid discharge portion 753n may be integrally configured with the second guard portion 732. If such a configuration is adopted, for example, the arrangement of the first to third liquid discharge portions 751n, 752n, 753n can be easily performed.
  • the solvent is discharged from the third center nozzle 749n onto the upper surface Wu of the substrate W without providing the second liquid discharge section 752n, the second liquid supply path 752p, and the second modification section 752v.
  • the configuration performed may be adopted.
  • a configuration may be adopted in which the second liquid discharge unit 752n discharges a rinse liquid as the second treatment liquid instead of the solvent.
  • a mechanical chuck or a mechanical gripper may be applied to the holding portion 720, or a Bernouy chuck or a Bernoulli gripper may be applied. good.
  • the first liquid discharge unit 751n, the second liquid discharge unit 752n, and the third liquid discharge unit 753n may be integrally configured with the rotation holding mechanism 72, respectively.
  • the inert gas may contain a gas other than nitrogen gas such as dry air or clean air.
  • the first tubular portion 75p1 is rotatable around a virtual rotation axis along the vertical direction. It may be provided in the part 75p2.
  • the control unit 9 may be able to change the direction of the first tubular portion 75p1 around the second tubular portion 75p2 by a driving unit such as a motor. According to such a configuration, for example, even when the upper surface of the guard 73 is arranged at a position higher than the lower surface 74b of the atmosphere control member 74 and the gap between the guard 73 and the atmosphere control member 74 is narrow.
  • 1st to 3rd liquid discharge portions 751n, 752n, 753n can be easily inserted and removed from the gap between the guard 73 and the atmosphere control member 74. Thereby, for example, even if the gap between the guard 73 and the atmosphere control member 74 is narrow, the first to third liquid discharge portions 751n, 752n, and 753n can be easily moved between the retracted position and the discharge position, respectively. can.
  • a rotation mechanism such as a motor is provided on the support shaft 742, and etching, cleaning, hydrophobization and drying are performed on the upper surface Wu of the substrate W in the order described in this description.
  • the blocking plate 741 may be rotated around the rotation shaft 72a.
  • the control unit 9 controls the operation of the rotation mechanism and shuts off in the same rotation direction as the substrate W and at substantially the same rotation speed according to the rotation of the substrate W held by the holding unit 720.
  • the plate 741 may be rotated.
  • the position of the first discharge port 751o in the first treatment step, the position of the second discharge port 752o in the second treatment step, and the position of the third discharge port 753o in the third treatment step are determined.
  • the positions may be equal to or slightly higher than the lower surface 74b of the atmosphere control member 74A in the vertical direction, respectively.

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  • Physics & Mathematics (AREA)
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Abstract

Selon la présente invention, afin de réaliser simultanément une commande d'atmosphère sur la surface supérieure d'un substrat et une réduction de la variation de traitement sur la surface supérieure du substrat, le substrat est maintenu dans une position horizontale par une unité de retenue, un gaz inactif est apporté sur la surface supérieure du substrat à partir d'un élément de commande d'atmosphère positionné dans un état à l'opposé de la surface supérieure du substrat, et un liquide de traitement est apporté sur la surface supérieure du substrat par évacuation du liquide de traitement depuis un orifice d'évacuation d'une unité d'évacuation de liquide vers une direction le long de la surface supérieure du substrat tout en faisant tourner l'unité de retenue autour d'un axe de rotation virtuel le long de la direction verticale. À ce moment, une position d'alimentation en liquide sur la surface supérieure du substrat au niveau de laquelle le liquide de traitement évacué de l'unité d'évacuation de liquide est apporté est changée en modifiant la quantité d'apport par unité de temps du liquide de traitement de la source d'alimentation en liquide de traitement à l'unité d'évacuation de liquide et en changeant la vitesse d'évacuation du liquide de traitement qui est évacué de l'unité d'évacuation de liquide.
PCT/JP2020/046230 2020-01-31 2020-12-11 Procédé de traitement de substrat et dispositif de traitement de substrat WO2021153033A1 (fr)

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JP2018157061A (ja) * 2017-03-17 2018-10-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

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US20140261572A1 (en) * 2013-03-15 2014-09-18 Dainippon Screen Mfg.Co., Ltd. Substrate treatment apparatus and substrate treatment method
US10332761B2 (en) * 2015-02-18 2019-06-25 SCREEN Holdings Co., Ltd. Substrate processing apparatus
JP6573520B2 (ja) 2015-09-29 2019-09-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6818484B2 (ja) * 2016-09-26 2021-01-20 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄方法、基板洗浄レシピ作成方法、および基板洗浄レシピ作成装置

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JP2018157061A (ja) * 2017-03-17 2018-10-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

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