WO2021129710A1 - Procédé de préparation de diode électroluminescente à points quantiques - Google Patents

Procédé de préparation de diode électroluminescente à points quantiques Download PDF

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WO2021129710A1
WO2021129710A1 PCT/CN2020/138851 CN2020138851W WO2021129710A1 WO 2021129710 A1 WO2021129710 A1 WO 2021129710A1 CN 2020138851 W CN2020138851 W CN 2020138851W WO 2021129710 A1 WO2021129710 A1 WO 2021129710A1
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quantum dot
dot light
preparation
transport layer
layer
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PCT/CN2020/138851
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English (en)
Chinese (zh)
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向超宇
张节
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Tcl科技集团股份有限公司
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Publication of WO2021129710A1 publication Critical patent/WO2021129710A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers

Definitions

  • This application relates to the field of display technology, in particular to a method for preparing quantum dot light-emitting diodes.
  • Quantum Dots Light Emitting Diode is a flat panel display device that emits light from excitons in a quantum dot material driven by an external electric field. It has the advantages of color cell harmony, high purity, good monochromaticity, and adjustable color. It solves the problem of organic light-emitting diodes ( The organic light-emitting materials in OLED), the color is not adjustable, the half-peak width is wider, the production cost is high, and the operation process is complicated. It is an ideal choice for the next generation of flat panel displays and solid state lighting.
  • the device structure of QLED is a typical sandwich structure, mainly composed of a cathode, an anode, and a quantum dot light-emitting layer sandwiched between the cathode and the anode.
  • a quantum dot light-emitting layer sandwiched between the cathode and the anode.
  • anode and the quantum dot light-emitting layer and/or the cathode and the quantum dot light-emitting layer There are often thin functional layers such as carrier transport layer, carrier injection layer and carrier blocking layer between them. Magnetron sputtering, evaporation, chemical vapor deposition, atomic layer deposition, molecular layer deposition, etc. can be used. Inkjet printing and other techniques are used for preparation.
  • inkjet printing has the advantages of fast printing speed, low noise, low price, environmental protection, and precise control of film thickness, it has been widely used in the manufacturing process of quantum dot light-emitting diodes in recent years.
  • the solvent of the carrier transport layer ink often uses a polar solvent with the opposite polarity to the quantum dot luminescent material.
  • the carrier transport layer ink is not easy to coat on the quantum dot luminescent layer. The poor performance of the film results in the low lifetime and luminous efficiency of QLEDs.
  • One of the purposes of the embodiments of the present application is to provide a method for preparing quantum dot light-emitting diodes, which aims to solve the poor performance of the carrier transport layer in the existing methods, resulting in the generally low lifespan and luminous efficiency of QLEDs The problem.
  • a method for preparing a quantum dot light-emitting diode which includes the following steps of preparing a carrier transport layer:
  • a ligand solution comprising: at least one of ammonium salts, organic amines, ester compounds, and phenolic compounds; depositing the ligand solution on the quantum dot light-emitting layer to prepare a surface modification Quantum dot light-emitting layer with ligand;
  • a carrier transport layer ink is provided, and the carrier transport layer ink is deposited on the quantum dot light-emitting layer whose surface is modified with a ligand to prepare a carrier transport layer.
  • the ammonium salt is selected from ammonium halides and/or tetramethylammonium hydroxide.
  • the organic amine is selected from at least one of ethylenediamine, aniline and triethanolamine.
  • the ester compound is selected from at least one of methyl methacrylate, ethyl crotonate, ethyl acetate and methyl benzoate.
  • the phenolic compound is selected from at least one of phenol, catechol, and 1-hydroxy-naphthalene.
  • the weight percentage concentration of the ligand in the ligand solution is 0.0001%-1%.
  • the material of the quantum dot light-emitting layer is oil-soluble quantum dots
  • the solvent of the ligand solution is alcohol
  • the alcohol includes at least one of ethanol, propanol, and butanol.
  • the quantum dot light-emitting layer in the step of depositing the ligand solution on the quantum dot light-emitting layer, is immersed in the ligand solution, and immersed in the ligand solution for a preset time. The volume solution is separated, and the solvent on the surface of the quantum dot light-emitting layer is removed.
  • the temperature at which the quantum dot light-emitting layer is immersed in the ligand solution is -5°C to 100°C.
  • the carrier transport layer is an electron transport layer.
  • the matrix includes: an anode, the quantum dot light-emitting layer is formed on the anode, and a hole transport layer and/or hole injection layer is formed between the anode and the quantum dot light-emitting layer Floor.
  • the preparation method further includes: depositing a cathode on the electron transport layer.
  • the preparation method further includes: depositing an electron injection layer on the electron transport layer, and depositing a cathode on the electron injection layer.
  • the carrier transport layer is a hole transport layer.
  • the substrate includes a cathode on which the quantum dot light-emitting layer is formed, and an electron transport layer and/or an electron injection layer is formed between the cathode and the quantum dot light-emitting layer.
  • the preparation method further includes: depositing an anode on the hole transport layer.
  • the preparation method further includes: depositing a hole injection layer on the hole transport layer, and depositing an anode on the hole injection layer.
  • a quantum dot light-emitting diode prepared by the above preparation method is provided.
  • the method for preparing quantum dot light-emitting diodes uses ammonium salts, organic amines, ester compounds, and phenolic compounds as the active ingredients of the ligand solution, and deposits the ligand solution on the quantum dot light-emitting layer to The quantum dot light-emitting layer whose surface is modified with ligand is prepared.
  • a polar solvent with the opposite polarity to the material of the quantum dot light-emitting layer is often used to avoid mutual dissolution between the quantum dot light-emitting layer material and the intercepting sub-transport layer ink during the inkjet printing process.
  • This application adopts ammonium salt , Organic amines, ester compounds and phenolic compounds and other active ingredients surface modification of the quantum dot light-emitting layer, which can make the surface of the quantum dot light-emitting layer connected with polar ligands, thereby increasing the carrier transport layer ink and the quantum dot light-emitting layer
  • the interface compatibility between these promotes the carrier transport layer ink to form a uniform film layer on the quantum dot light-emitting layer, thereby improving the film-forming performance of the carrier transport layer, thereby increasing the lifespan and luminous efficiency of the QLED.
  • the quantum dot light-emitting diode provided by the present application is prepared by the above-mentioned preparation method and has a longer life and higher luminous efficiency.
  • FIG. 1 is a flowchart of a method for manufacturing a quantum dot light-emitting diode provided by an embodiment of the present application
  • FIG. 2 is a schematic structural diagram of a substrate used in a method for manufacturing a quantum dot light-emitting diode provided by an embodiment of the present application;
  • FIG. 3 is a schematic structural diagram of a substrate used in a method for manufacturing a quantum dot light-emitting diode provided by an embodiment of the present application;
  • FIG. 4 is a schematic structural diagram of a quantum dot light-emitting diode manufactured by the method for manufacturing a quantum dot light-emitting diode according to an embodiment of the present application;
  • FIG. 5 is a schematic structural diagram of a quantum dot light-emitting diode manufactured by the manufacturing method provided by the embodiment of the present application;
  • FIG. 6 is a schematic structural diagram of a quantum dot light-emitting diode manufactured by the manufacturing method provided by the embodiment of the present application;
  • FIG. 7 is a schematic structural diagram of a quantum dot light-emitting diode manufactured by the manufacturing method provided by the embodiment of the present application.
  • FIG. 8 is a schematic structural diagram of a quantum dot light-emitting diode manufactured by the manufacturing method provided in the embodiment of the present application.
  • FIG. 9 is a schematic structural diagram of a quantum dot light-emitting diode manufactured by the manufacturing method provided by the embodiment of the present application.
  • FIG. 10 is a schematic structural diagram of a quantum dot light-emitting diode manufactured by the manufacturing method provided by the embodiment of the present application.
  • the embodiments of the present application provide the following specific technical solutions:
  • a method for preparing a quantum dot light-emitting diode includes the following steps of preparing a carrier transport layer:
  • S02. Provide a ligand solution, the ligand solution comprising: at least one of ammonium salts, organic amines, ester compounds and phenolic compounds; depositing the ligand solution on the quantum dot light-emitting layer to prepare Quantum dot light-emitting layer modified with ligand on the surface;
  • S03. Provide a carrier transport layer ink, and deposit the carrier transport layer ink on the quantum dot light-emitting layer whose surface is modified with a ligand to prepare a carrier transport layer.
  • the method for preparing quantum dot light-emitting diodes uses ammonium salts, organic amines, ester compounds, and phenolic compounds as the active ingredients of the ligand solution, and deposits the ligand solution on the quantum dot light-emitting layer , To prepare a quantum dot light-emitting layer modified with ligands on the surface.
  • a polar solvent with the opposite polarity to the material of the quantum dot light-emitting layer is often used to avoid mutual dissolution between the quantum dot light-emitting layer material and the intercepting sub-transport layer ink during the inkjet printing process.
  • Active ingredients such as ammonium salts, organic amines, ester compounds, and phenolic compounds modify the quantum dot light-emitting layer on the surface, which can connect the surface of the quantum dot light-emitting layer with polar ligands, thereby increasing the carrier transport layer ink and quantum dots
  • the interface compatibility between the light-emitting layers promotes the carrier transport layer ink to form a uniform film on the quantum dot light-emitting layer, thereby improving the film-forming performance of the carrier transport layer, thereby increasing the lifespan and luminous efficiency of the QLED.
  • a quantum dot light-emitting layer is formed on the substrate as a carrier to promote subsequent surface modification of the quantum dot light-emitting layer.
  • the structure of the substrate can refer to the substrates of conventional light-emitting diodes in the art, and the embodiments of the present application will not be repeated here.
  • the material of the quantum dot light-emitting layer is oily quantum dots, including, but not limited to, II-VI group compound quantum dots, III-V group compound quantum dots, and IV-VI group compound quantum dots.
  • the thickness of the quantum dot light-emitting layer is 30-50 nm.
  • the ligand solution contains: at least one of ammonium salts, organic amines, ester compounds, and phenolic compounds, and ammonium salts, organic amines, ester compounds, and phenolic compounds are used as the ligand solution.
  • the active ingredient is used to modify the surface of the quantum dot light-emitting layer so that the surface of the quantum dot light-emitting layer is connected with polar ligands, reducing the polarity gap between the quantum dot light-emitting layer and the carrier transport layer, thereby increasing
  • the interface compatibility between the carrier transport layer ink and the quantum dot light-emitting layer is improved, the interface bonding degree between the carrier transport layer and the quantum dot light-emitting layer is improved, and the film-forming performance of the carrier transport layer is improved.
  • the ammonium salt is preferably ammonium halide.
  • the ammonium halide is selected from at least one of ammonium fluoride, ammonium fluoride, and ammonium iodide. These ammonium halides contain ammonium ions, which can coordinately connect with the quantum dot metal vacancies on the surface of the quantum dot light-emitting layer, and have good adhesion. After testing, the quantum dots that have undergone surface modification treatment with these ammonium halide ethanol solutions The carrier transport layer deposited on the light-emitting layer has good film-forming properties.
  • the organic amine is an organic substance containing an amine group.
  • the organic amine is selected from at least one of ethylenediamine, aniline, and triethanolamine.
  • This organic amine contains amine groups.
  • the amine groups can be bound to the surface of the quantum dot light-emitting layer through coordination bonds, which can improve the polarity of the quantum dot light-emitting layer surface to a certain extent, and improve the surface of the quantum dot light-emitting layer and the carrier transport layer ink The compatibility between the two is conducive to improving the film performance of the carrier transport layer.
  • the ester compound is an organic substance containing an ester group.
  • the ester compound is selected from at least one of methyl methacrylate, ethyl crotonate, ethyl acetate, and methyl benzoate.
  • the ester compound can be stably modified on the surface of the quantum dot light-emitting layer, and can be used as a buffer layer between the quantum dot light-emitting layer and the carrier transport layer, which is beneficial to improve the compatibility between the quantum dot light-emitting layer and the carrier transport layer ink , Improve the film performance of the carrier transport layer.
  • the phenolic compound is an organic substance containing a phenolic group.
  • the phenolic compound is selected from at least one of phenol, catechol, and 1-hydroxy-naphthalene. After testing, the surface of the quantum dot is modified with the above-mentioned factors. This kind of phenolic compound is beneficial to improve the film performance of the carrier transport layer.
  • the ligand solution contains: ammonium halide, ethylenediamine, tetramethylammonium hydroxide, aniline, triethanolamine, methyl methacrylate, ethyl crotonate, ethyl acetate, methyl benzoate One of phenol, catechol, and 1-hydroxy-naphthalene.
  • the solvent of the ligand solution is alcohol, ammonium halide, ethylenediamine, tetramethylammonium hydroxide, aniline, triethanolamine, methyl methacrylate, ethyl crotonate, ethyl acetate, benzene Methyl formate, phenol, catechol, and 1-hydroxy-naphthalene have good solubility in alcohol, and alcohol is volatile, and the solvent on the surface of the light-emitting layer can be quickly removed after the surface modification treatment step is completed. Ensure that no solvent remains on the surface of the quantum dot light-emitting layer.
  • the alcohol includes at least one of ethanol, propanol, and butanol.
  • a polar solvent with the opposite polarity to the quantum dot light-emitting layer material is often used in the inkjet printing method.
  • the polarity of the ligand solution is opposite to the polarity of the quantum dot light-emitting layer material. Due to the limitation of the existing technology, most of the current quantum dot luminescent materials are mainly oil-soluble quantum dots. Therefore, polar or hydrophilic inks are often used for inkjet printing of the carrier transport layer.
  • the quantum dot light-emitting layer material is oil-soluble quantum dots
  • the solvent of the ligand solution is alcohol.
  • Alcohol has the characteristics of being volatile, and after the surface modification treatment step is completed, the solvent on the surface of the light-emitting layer can be quickly removed to ensure no solvent residue on the surface of the quantum dot light-emitting layer.
  • the alcohol includes at least one of ethanol, propanol, and butanol.
  • the ligand solution uses ammonium salts, organic amines, ester compounds and phenolic compounds as solutes, and the concentration of the solute affects the surface modification effect of the quantum dot light-emitting layer.
  • the concentration of the solute in the ligand solution is 0.0001%-1%.
  • Ammonium salts and organic amines have the advantages of strong polarity, easy reaction, and easy decomposition at high temperature. They are excellent materials for modifying the quantum dot layer.
  • quantum dots are too sensitive to materials, they also have the disadvantage that the reaction is difficult to control; esters
  • the compounds and phenolic compounds are slightly weaker in polarity, with moderate reactivity and moderate volatility, but because the reaction is relatively controllable, they also have certain application value.
  • the effective concentration of the solute in the ligand solution is generally within the range of 0.0001%-1%. Too high can easily lead to high solute residues, cause surface defects of the functional layer, and reduce device efficiency; too low can easily lead to limited effects.
  • step S02 the ligand solution is deposited on the quantum dot light-emitting layer, so that the active ingredient in the solvent is attached to the surface of the quantum dot light-emitting layer in the form of ions or compounds, thereby obtaining a quantum dot whose surface is modified with ligand.
  • Point light-emitting layer the ligand solution is deposited on the quantum dot light-emitting layer, so that the active ingredient in the solvent is attached to the surface of the quantum dot light-emitting layer in the form of ions or compounds, thereby obtaining a quantum dot whose surface is modified with ligand. Point light-emitting layer.
  • step of depositing the ligand solution on the quantum dot light-emitting layer conventional deposition methods, such as spin coating, inkjet printing, etc., can be used, and other methods can also be used.
  • the quantum dot light-emitting layer in the step of depositing the ligand solution on the quantum dot light-emitting layer, is immersed in the ligand solution, and immersed in the ligand solution for a preset time. The volume solution is separated, and the solvent on the surface of the quantum dot light-emitting layer is removed.
  • the ligand can be modified on the surface of the quantum dot light-emitting layer, without expensive equipment, simple operation, simplifying the process, and promoting the large-scale mass production of quantum dot light-emitting diodes. lower the cost.
  • the temperature and time for immersing the quantum dot light-emitting layer in the ligand solution can be flexibly adjusted according to the actual needs of the product.
  • the quantum dot light-emitting layer is immersed in the ligand solution
  • the temperature is -5°C-100°C.
  • the reaction barrier of the ligand-modified quantum dots determines the temperature of the immersion solution. Controlling the temperature is conducive to controlling the reaction speed and reaction time, so as to achieve the ideal process effect.
  • the time for immersing the quantum dot light-emitting layer in the ligand solution is less than 10 minutes.
  • step S03 the carrier transport layer ink is deposited on the quantum dot light-emitting layer whose surface is modified with ligands to prepare a carrier transport layer.
  • the carrier transport layer ink is a solution in which the carrier transport layer material is dissolved, and includes the carrier transport layer material and a solvent for dispersing the carrier transport layer material.
  • the solvent of the carrier transport layer ink is often opposite in polarity to the quantum dot light-emitting layer material.
  • the carrier transport layer material is selected from conventional carrier transport layer materials in the field, and may be a commercially available product, or it may be prepared by conventional operations in the field. It can be understood that the carrier transport layer is an electron transport layer or a hole transport layer. In some embodiments, the carrier transport layer is an electron transport layer, and the electron transport layer material is selected from n-type zinc oxide.
  • the carrier transport layer is a hole transport layer
  • the hole transport layer material is selected from poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl) ) Diphenylamine) (TFB), N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB), NiO, At least one of MoO3.
  • the step of depositing the carrier transport layer ink on the quantum dot light-emitting layer modified with ligands reference may be made to conventional operations in the art, such as spin coating or inkjet printing.
  • an inkjet printing method is used to print the carrier transport layer ink on the predetermined area of the surface-modified quantum dot light-emitting layer.
  • the thickness of the carrier transport layer is 10-100 nm.
  • the carrier transport layer is an electron transport layer; as shown in FIG. 2, the matrix includes: an anode, a quantum dot light-emitting layer is formed on the anode, and a hole transport layer is formed between the anode and the quantum dot light-emitting layer And/or hole injection layer.
  • the hole injection layer material can refer to conventional hole injection layer materials in the art, such as PEDOT:PSS. In some other embodiments, the hole injection layer has a thickness of 10-100 nm.
  • the preparation method further includes: depositing a cathode on the electron transport layer; or
  • the preparation method further includes: depositing an electron injection layer on the electron transport layer, and depositing a cathode on the electron injection layer.
  • the carrier transport layer is a hole transport layer; as shown in FIG. 3, the matrix includes: a cathode, a quantum dot light-emitting layer is formed on the cathode, and an electron transport layer is formed between the cathode and the quantum dot light-emitting layer And/or electron injection layer.
  • the material of the electron injection layer can refer to the conventional electron injection layer materials in the art, such as LiF, CsF, etc. In some other embodiments, the thickness of the electron injection layer is 10-100 nm.
  • the preparation method further includes: depositing an anode on the hole transport layer; or
  • the preparation method further includes: depositing a hole injection layer on the hole transport layer, and depositing an anode on the hole injection layer.
  • the materials and thicknesses of the anode and cathode can refer to the anode and cathode of conventional quantum dot light-emitting diodes in the art.
  • the anode is selected as an indium tin oxide (ITO) electrode with a thickness of 60-120 nm.
  • the cathode is selected as an Ag or Al electrode with a thickness of 60-120 nm.
  • the interface between the carrier transport layer and the quantum dot light-emitting layer is tightly bonded, and the film of the carrier transport layer
  • the layer performance is good, so that the quantum dot light-emitting diode obtained by the preparation method provided in the embodiment of the present application has a longer life and higher luminous efficiency.
  • the embodiment of the present application adopts a method of immersing the quantum dot light-emitting layer in a ligand solution containing a polar ligand for surface modification. Simplified and easy to operate, it can greatly improve production efficiency and realize large-scale mass production.
  • the quantum dot light-emitting diode prepared by the above preparation method.
  • the quantum dot light-emitting diode provided by the embodiment of the present application is produced by the above-mentioned preparation method and has a longer life and higher luminous efficiency.
  • the quantum dot light-emitting diode includes a substrate, a first electrode, a quantum dot light-emitting layer, an electron transport layer, and a second electrode arranged in sequence.
  • the quantum dot light-emitting diode includes a substrate, a first electrode, a quantum dot light-emitting layer, an electron transport layer, an electron injection layer, and a second electrode arranged in sequence.
  • the quantum dot light-emitting diode includes a substrate, a first electrode, a quantum dot light-emitting layer, a hole transport layer, and a second electrode arranged in sequence.
  • the quantum dot light-emitting diode includes a substrate, a first electrode, a quantum dot light-emitting layer, a hole transport layer, a hole injection layer, and a second electrode arranged in sequence.
  • the quantum dot light-emitting diode includes a substrate, a first electrode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and electrons arranged in sequence. Injection layer and second electrode.
  • the quantum dot light-emitting diode includes: a substrate, a first electrode, an electron injection layer, an electron transport layer, a quantum dot light-emitting layer, a hole transport layer, and a hole Injection layer and second electrode.
  • This embodiment provides a method for manufacturing a quantum dot light-emitting diode, which specifically includes the following steps:
  • the substrate in turn includes: a glass substrate, an ITO anode, a PEDOT:PSS hole injection layer and a TFB hole transport layer;
  • Example 2-6 In the preparation methods provided in Example 2-6 and Comparative Example 1-2, the difference from Example 1 is that the selected ligand solution is different, and the specific information is shown in Table 1.
  • the quantum dot light-emitting diodes prepared in Examples 1-6 and Comparative Examples 1-2 were taken to test the changes in external quantum efficiency (EQE, %), and the test results are shown in Table 2. The results showed that the external quantum efficiency of the quantum dot light-emitting diodes prepared in Examples 1-6 was significantly improved after 6 days of use.
  • the quantum dot light-emitting diodes prepared in Examples 1-6 and Comparative Examples 1-2 were taken to test their service life respectively, and the test results are shown in Table 3. The results show that the lifetime of the quantum dot light-emitting diodes prepared in Examples 1-6 is significantly increased.

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  • Physics & Mathematics (AREA)
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  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un procédé de fabrication d'une diode électroluminescente à points quantiques. Le procédé de préparation comprend les étapes suivantes de préparation d'une couche de transport de porteurs consistant à : utiliser une base, une couche électroluminescente à points quantiques étant formée sur la base ; utiliser une solution de ligand, la solution de ligand contenant : au moins un élément parmi un sel d'ammonium, une amine organique, un composé ester et un composé phénolique ; déposer la solution de ligand sur la couche électroluminescente à points quantiques pour préparer une couche électroluminescente à points quantiques ayant un ligand modifié sur sa surface ; et utiliser une encre de couche de transport de porteurs, et déposer l'encre de couche de transport de porteurs sur la couche électroluminescente à points quantiques ayant un ligand modifié sur sa surface, de manière à préparer une couche de transport de porteurs. La modification de la surface d'une couche électroluminescente à points quantiques augmente la compatibilité d'interface entre l'encre de couche de transport de porteurs et la couche électroluminescente à points quantiques, et améliore la propriété de formation de film de la couche de transport de porteurs.
PCT/CN2020/138851 2019-12-27 2020-12-24 Procédé de préparation de diode électroluminescente à points quantiques WO2021129710A1 (fr)

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CN201911378994.XA CN113054115A (zh) 2019-12-27 2019-12-27 量子点发光二极管的制备方法

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