WO2021114503A1 - 显示面板及其制作方法 - Google Patents

显示面板及其制作方法 Download PDF

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Publication number
WO2021114503A1
WO2021114503A1 PCT/CN2020/079251 CN2020079251W WO2021114503A1 WO 2021114503 A1 WO2021114503 A1 WO 2021114503A1 CN 2020079251 W CN2020079251 W CN 2020079251W WO 2021114503 A1 WO2021114503 A1 WO 2021114503A1
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WIPO (PCT)
Prior art keywords
layer
color
spacer
display panel
resist
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Ceased
Application number
PCT/CN2020/079251
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English (en)
French (fr)
Inventor
张翼鹤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US16/649,708 priority Critical patent/US11415847B2/en
Publication of WO2021114503A1 publication Critical patent/WO2021114503A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13396—Spacers having different sizes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Definitions

  • This application relates to the technical field of display panels, and in particular to a display panel and a manufacturing method thereof.
  • the PS photo Spacer (optical spacer) plays the role of supporting the upper and lower substrates in the display panel, and the PS is generally made of two or more different heights, including the main spacer column that is in contact with the upper and lower substrates and is compressed to a certain extent, and the normal The state is not compressed, and acts as an auxiliary spacer column when subjected to external pressure; in addition, the black matrix (BM) in the existing display panel is generally set on the upper substrate to prevent the surrounding of the gate line and the data line The liquid crystal is affected by the gate line and the data line, causing light leakage.
  • BM black matrix
  • BM black matrix
  • the embodiments of the present application provide a display panel and a manufacturing method thereof, so as to solve the need to separately manufacture BM and PS as two processes in the existing curved display panel, and the BM is set on the upper substrate, which may easily cause the relative displacement of the BM on the upper and lower substrates.
  • the large curved screen structure causes positional deviation, resulting in light leakage or color shift problems.
  • An embodiment of the present application provides a display panel, which includes an upper substrate and a lower substrate that are disposed oppositely, a TFT layer is provided on a side of the lower substrate close to the upper substrate, and a side of the TFT layer away from the lower substrate A color resist layer is provided, a spacer layer and a black matrix are provided on the side of the color resist layer away from the TFT layer, and the spacer layer and the black matrix are integrally formed.
  • the color resist layer includes a color resist carrier corresponding to the spacer layer and protruding toward the upper substrate, and the spacer layer includes a main spacer column and A secondary spacer column, the thickness of the color blocking stage corresponding to the main spacer column is greater than the thickness of the color blocking stage corresponding to the secondary spacer column.
  • the color resist carrier includes two color resists of different colors arranged in a layered manner.
  • the color resistance of the color resistance carrier on the side close to the TFT layer is the first color color resistance or the second color color resistance, and the color resistance corresponding to the main spacer column
  • the color resist on the side far from the TFT layer in the carrier is the third color color resist, and the color resist on the side far from the TFT layer in the color resist carrier corresponding to the sub spacer column is the same as the color resist in the color resist carrier.
  • the first color color resistance is a green color resistance
  • the second color color resistance is a red color resistance
  • the third color color resistance is a blue color resistance
  • the first color color resistance is a red color resistance
  • the second color color resistance is a green color resistance
  • the third color color resistance is a blue color resistance
  • the difference between the thickness of the color blocking stage corresponding to the main spacer column and the thickness of the color blocking stage corresponding to the auxiliary spacer column is 0.19um ⁇ 0.21um.
  • the TFT layer includes a boss corresponding to the spacer layer, and the thickness of the boss corresponding to the main spacer post is greater than that of the auxiliary spacer post. The thickness of the boss.
  • the TFT layer includes a first metal layer provided on the lower substrate, a second metal layer provided on the first metal layer and the lower substrate and covering the first metal layer.
  • An insulating layer, an active layer provided on the first insulating layer, a second metal layer provided on the active layer, and a second metal layer provided on the first insulating layer and the second metal layer A second insulating layer covering the second metal layer;
  • the boss corresponding to the main spacer column is formed by sequentially stacking the first metal layer, the first insulating layer, the active layer, the second metal layer, and the second insulating layer, and the auxiliary spacer
  • the boss corresponding to the pillar is formed by sequentially stacking the first metal layer, the first insulating layer, and the second insulating layer.
  • the first metal layer includes a gate and a gate trace connected to the gate, and the first metal layer in the boss corresponding to the main spacer is For the gate, the first metal layer in the boss corresponding to the sub-spacer pillar is part of the gate wiring.
  • the difference between the thickness of the boss corresponding to the main spacer column and the thickness of the boss corresponding to the auxiliary spacer column is 0.3um ⁇ 0.5um.
  • the embodiment of the present application also provides a method for manufacturing a display panel, including the following steps:
  • the upper substrate and the lower substrate are joined together, and the upper substrate is arranged on the side of the spacer layer away from the lower substrate and opposite to the lower substrate.
  • the color resist layer includes at least a color resist carrier formed on the TFT layer, and the color resist carrier includes two color resists of different colors stacked on top of each other. .
  • the spacer layer is formed on the side of the color resist carrier away from the TFT layer.
  • the spacer layer and the black matrix are integrally formed through the same exposure and development process.
  • the color resist layer is manufactured by inkjet printing.
  • the present application provides a display panel and a manufacturing method thereof.
  • the black matrix offset in the curved screen prevents the light leakage and color shift of the display panel.
  • the spacer layer and the black The matrix is designed as a one-piece structure, and the spacer layer and the black matrix are formed by one manufacturing process, which simplifies the manufacturing process, saves machine equipment, masks, and increases productivity without affecting the spacer layer and the black matrix. The original performance of the matrix.
  • FIG. 1 is a schematic structural diagram of a display panel provided by an embodiment of the application.
  • FIG. 2 is a schematic block diagram of the flow of a manufacturing method of a display panel provided by an embodiment of the application.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include one or more of the features. In the description of the present application, “multiple” means two or more than two, unless otherwise specifically defined.
  • connection should be understood in a broad sense, unless otherwise clearly specified and limited.
  • it can be a fixed connection or a detachable connection.
  • Connected or integrally connected it can be mechanically connected, or electrically connected or can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two components or the interaction of two components relationship.
  • connection should be understood according to specific circumstances.
  • the "on" or “under” of the first feature of the second feature may include direct contact between the first and second features, or may include the first and second features Not in direct contact but through other features between them.
  • the "above”, “above” and “above” of the first feature on the second feature include the first feature directly above and obliquely above the second feature, or it simply means that the first feature is higher in level than the second feature.
  • the “below”, “below” and “below” of the second feature of the first feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.
  • an embodiment of the present application provides a display panel, which includes an upper substrate 100 and a lower substrate 200 disposed oppositely, and a TFT layer 300 is provided on a side of the lower substrate 200 close to the upper substrate 100.
  • the side of the TFT layer 300 away from the lower substrate 200 is provided with a color resist layer 400
  • the side of the color resist layer 400 away from the TFT layer 300 is provided with a spacer layer 500 and a black matrix 600, and the spacer The layer 500 and the black matrix 600 are integrally formed.
  • BM and PS need to be manufactured separately as two processes in the existing curved display panel, and the BM is set on the upper substrate 100, which may easily cause the position of the BM in the curved screen structure with a large relative displacement of the upper and lower substrates 200.
  • the color resist layer 400 and the black matrix 600 are both disposed on the lower substrate 200.
  • the color resist layer 400 and the black matrix The relative position between the matrix 600 does not change with the relative position of the upper substrate 100 and the lower substrate 200, thereby reducing the risk of light leakage or color shift of the display panel, and the spacer layer 500 is connected to the
  • the black matrix 600 is set as an integral molding structure, which also simplifies the manufacturing process of the display panel and improves the manufacturing efficiency; specifically, the materials of the spacer layer 500 and the black matrix 600 are both black photoresist materials; in addition, As shown in FIG. 1, only a part of the display panel structure of the non-display area corresponding to the spacer layer 500 and the black matrix 600 is shown in FIG. 1, and the display area of the display area corresponding to the black matrix 600 is displayed. The panel structure is not shown in the figure.
  • the color resist layer 400 includes a color resist carrier 410 corresponding to the spacer layer 500 and protruding toward the upper substrate 100
  • the spacer layer 500 includes a main spacer column 510 and the auxiliary spacer column 520
  • the thickness of the color resistance carrier 410 corresponding to the main spacer column 510 is greater than the thickness of the color resistance carrier 410 corresponding to the auxiliary spacer column 520.
  • the thickness of the color resistance stage 410 corresponding to the main spacer column 510 and the auxiliary spacer column 520 is set differently, which is more convenient to realize the main spacer column 510 and the auxiliary spacer column
  • the height difference between 520 so as to achieve a certain degree of compression of the main spacer post 510 and the upper substrate 100, and the normal state of the auxiliary spacer post 520 is not compressed, to assist when subjected to external pressure Supporting effect.
  • the color resist carrier 410 includes two different colors of color resists stacked and arranged, and the color resist on the side of the color resist carrier 410 close to the TFT layer 300 is the first color resist 411 Or the second color color resist 412, the color resist of the color resist carrier 410 corresponding to the main spacer column 510, which is far from the TFT layer 300, is the third color color resist 413, and the secondary spacer column 520
  • the color resistance of the corresponding color resistance stage 410 on the side far from the TFT layer 300 is a second color color resistance that is different from the color resistance of the color resistance stage 410 on the side close to the TFT layer 300 412 or the first color resist 411
  • the thickness of the third color resist 413 is greater than the thickness of the first color resist 411
  • the thickness of the third color resist 413 is greater than the thickness of the second color resist
  • first color color resistance 411 and the second color color resistance 412 are any combination of green color resistance and red color resistance, that is, in the double-layer color resistance structure in the color resistance carrier 410,
  • the color resistance carrier 410 can be used to increase the height of the green color resistance or the red color resistance
  • the third color color resistance 413 corresponding to the main spacer column 510 is the blue color resistance.
  • the height of the blue color resist is generally required to be greater than the height of the green color resist or the red color resist, so that the main partition
  • the thickness of the color resistance carrier 410 corresponding to the spacer column 510 is greater than the thickness of the color resistance carrier 410 corresponding to the auxiliary spacer column 520.
  • the height of the blue color resistance is the same as that of the green color resistance.
  • the height difference of the red color resistance is 0.19um ⁇ 0.21um, so that the thickness of the color resistance carrier 410 corresponding to the main spacer column 510 is the same as the color resistance carrier 410 corresponding to the auxiliary spacer column 520
  • the difference in thickness of the color resistance is 0.19um ⁇ 0.21um; in one embodiment, the height difference between the blue color resistance and the green color resistance or the red color resistance can be 0.2um.
  • the present application adopts the existing color resistance During the process, the thicker blue color resist is arranged in the color resist carrier 410 corresponding to the main spacer column 510, without changing the design of other existing structures, and it reaches the main level to a certain extent. The effect of the height difference between the spacer column 510 and the auxiliary spacer column 520 can minimize the influence on the structure and manufacturing process of the existing display panel.
  • the TFT layer 300 includes a boss 310 corresponding to the spacer layer 500, and the thickness of the boss 310 corresponding to the main spacer post 510 is greater than that of the auxiliary spacer post The thickness of the boss 310 corresponding to 520.
  • the thickness of the boss 310 corresponding to the main spacer post 510 and the auxiliary spacer post 520 is set differently to facilitate the realization of the The height difference between the main spacer column 510 and the auxiliary spacer column 520 helps to realize the respective supporting functions of the main spacer column 510 and the auxiliary spacer column 520 respectively.
  • the TFT layer 300 includes a first metal layer 320 provided on the lower substrate 200, and is provided on the first metal layer 320 and the lower substrate 200 and covers the first metal layer 320
  • the boss 310 corresponding to the main spacer 510 is formed by the first metal layer 320 and the first insulating layer.
  • Layer 330, active layer 340, second metal layer 350, and second insulating layer 360 are stacked in sequence, and the boss 310 corresponding to the auxiliary spacer post 520 is formed by the first metal layer 320, the second insulating layer An insulating layer 330 and the second insulating layer 360 are stacked in sequence.
  • the boss 310 corresponding to the main spacer 510 includes a first metal layer 320, a first insulating layer 330, an active layer 340, a second metal layer 350, and a second insulating layer 360 in sequence, compared to The first metal layer 320, the first insulating layer 330, and the second insulating layer 360 in the boss 310 structure corresponding to the sub-spacer pillar 520 are more than the active layer 340 and the second metal layer
  • the thickness of 350 it can be understood that the first metal layer 320, the first insulating layer 330, the active layer 340, the second metal layer 350, and the second insulating layer 360 are all conventional structures in the TFT layer 300
  • the first metal layer 320 includes a gate 321 and a gate trace 322 connected to the gate 321, and the first metal layer 320 in the boss 310 corresponding to the main spacer 510 is The gate 321, the first metal layer 320 in the boss 310 corresponding to the auxiliary spacer 520 are part of the gate
  • the gate traces 322 include gates A single-layer metal such as a metal wire or a storage capacitor; obviously, the thickness of the gate 321 is greater than the thickness of the gate trace 322, which combines the structural differences between the above two types of bumps 310 and combines the existing
  • the TFT manufacturing process requires that the difference between the thickness of the boss 310 corresponding to the main spacer column 510 and the thickness of the boss 310 corresponding to the auxiliary spacer column 520 is 0.3um ⁇ 0.5um.
  • the auxiliary spacer 520 is arranged on the In the TFT layer 300 corresponding to the gate trace 322, the position is lower on the boss 310; the height difference between the main spacer post 510 and the auxiliary spacer post 520 is realized by
  • the spacer layer 500 is provided on the relatively high position of the boss 310 on the TFT layer 300, which has no other influence on the structure of the TFT layer 300, and realizes the overall height of the spacer layer 500, and realizes the overall heightening of the spacer layer 500.
  • the effect of the height difference between the main spacer column 510 and the auxiliary spacer column 520 is realized by arranged on the boss 310 in the TFT layer 300 corresponding to the gate trace 322, the position is lower on the boss 310; the height difference between the main spacer post 510 and the auxiliary spacer post 520 is realized by
  • the spacer layer 500 is provided on the relatively high position of the boss 310 on the TFT layer 300, which has no other influence on the structure of the TFT layer 300, and realizes
  • the overall height of the spacer layer 500 is increased, combined with the height difference between the different bosses 310 Adjust the setting positions of the main spacer column 510 and the auxiliary spacer column 520 according to the height difference between the different color blocking stages 410, and realize the main spacer column 510 and the auxiliary spacer column 510
  • the effect of the height difference between the pillars 520, as shown in FIG. 1, in the process of integrally manufacturing the black matrix 600 and the spacer layer 500 it may be by coating black color resist material, and then performing exposure and development. The production can be completed. In one embodiment, there is no need to use differential exposure (such as HTM, half tone mask; halftone mask) for production. If the leveling effect of the material in the production process is not considered, the black matrix 600
  • the thickness of the spacer layer 500 is the same everywhere.
  • the portion corresponding to the color resist layer 400 and the black matrix 600 is a single-layer color resist structure, and the color resist carrier 410 is designed to It is a double-layer color resist structure, but does not affect the overall manufacturing process of the color resist layer 400. It only needs to change the mask structure when the color resist is made; in addition, the color resist layer 400 is close to the color resist layer.
  • One side of the black matrix 600 is covered with a third insulating layer 700, and ITO electrodes are provided between the third insulating layer 700 and the black matrix 600, and on the side of the upper substrate 100 close to the lower substrate 200 Specifically, the material of the third insulating layer 700 is SiNx.
  • the spacer layer 500 and the black matrix 600 are designed as The one-piece structure is convenient to simplify the production process and reduce the material cost.
  • the embodiment of the present application also provides a method for manufacturing a display panel, as shown in FIG. 2, including the following steps:
  • Step S10 providing an upper substrate 100 and a lower substrate 200, and forming a TFT layer 300 on the lower substrate 200;
  • Step S20 forming a color resist layer 400 on the side of the TFT layer 300 away from the lower substrate 200;
  • Step S30 forming a spacer layer 500 and a black matrix 600 on the side of the color resist layer 400 away from the TFT layer 300, and the spacer layer 500 and the black matrix 600 are integrally formed by the same process;
  • Step S40 align the upper substrate 100 with the lower substrate 200, and the upper substrate 100 is disposed on the side of the spacer layer 500 away from the lower substrate 200, and is disposed opposite to the lower substrate 200 .
  • the TFT layer 300, the color resist layer 400, the spacer layer 500 and the black matrix 600 are sequentially fabricated on the lower substrate 200, and then the The upper substrate 100 is aligned with the lower substrate 200 whose functional layers have been prepared.
  • the color resist layer 400 in the step S20, in the color resist layer 400 formed on the side of the TFT layer 300 away from the lower substrate 200, the color resist layer 400 at least includes The color resist carrier 410 on the TFT layer 300, the color resist carrier 410 includes two color resists of different colors stacked and arranged;
  • the spacer layer 500 and the black matrix 600 are formed on the side of the color resist layer 400 away from the TFT layer 300:
  • the spacer layer 500 is formed on the side of the color stop stage 410 away from the TFT layer 300.
  • the spacer layer 500 and the black matrix 600 may be integrally formed using the same exposure and development process; the color resist layer 400 may be manufactured by inkjet printing.
  • the present application prevents the black matrix 600 from shifting in the curved screen from causing light leakage and color shift in the display panel by disposing the black matrix 600 on the lower substrate 200.
  • the spacer layer 500 and the black matrix 600 are designed as One-piece structure, the spacer layer 500 and the black matrix 600 are made by one manufacturing process, which simplifies the manufacturing process, saves machine equipment, masks, and increases productivity without affecting the spacer layer 500 and the black matrix. The original performance of the matrix 600.

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Abstract

一种显示面板及其制作方法，其中，显示面板包括相对设置的上基板（100）和下基板（200），下基板（200）靠近上基板（100）的一侧设有TFT层（300），TFT层（300）远离下基板（200）的一侧设有色阻层（400），色阻层（400）远离TFT层（300）的一侧设有隔垫层（500）和黑色矩阵（600），且隔垫层（500）与黑色矩阵（600）为一体成型结构，从而简化了制作工艺，提高了产能，并且不影响隔垫层（500）和黑色矩阵（600）的原有性能。

Description

显示面板及其制作方法 技术领域
本申请涉及显示面板技术领域，尤其涉及一种显示面板及其制作方法。
 背景技术
随着显示技术的发展，柔性显示或曲屏已经成为显示技术的发展趋势，并被用于各种电子设备中，现有的曲面屏显示面板中PS(photo spacer，光学间隔物)起到支撑显示面板中上下基板的作用，并且PS一般会做两种及以上的不同高度，包括与上下基板均有接触且受到一定程度压缩的主隔垫柱、及正常状态不压缩，在受到外界压力时起到辅助支撑作用的副隔垫柱；此外，现有显示面板中的黑色矩阵（BM）一般设于上基板，用于防止由于栅极线和数据线周围的液晶受到栅极线和数据线影响导致漏光。
 技术问题
现有黑色矩阵（BM）设于上基板的显示面板在制作过程中需要将BM和PS作为两道制程分别制作，并且BM设于上基板也容易导致BM在上下基板相对位移较大的曲屏结构中造成位置偏移，从而导致漏光或者色偏的问题。
 技术解决方案
本申请实施例提供一种显示面板及其制作方法，以解决现有的曲面显示面板中需要将BM和PS作为两道制程分别制作，并且BM设于上基板容易导致BM在上下基板相对位移较大的曲屏结构中造成位置偏移，从而导致漏光或者色偏的问题。
本申请实施例提供了一种显示面板，包括相对设置的上基板和下基板，所述下基板靠近所述上基板的一侧设有TFT层，所述TFT层远离所述下基板的一侧设有色阻层，所述色阻层远离所述TFT层的一侧设有隔垫层和黑色矩阵，且所述隔垫层与所述黑色矩阵为一体成型结构。
在本申请实施例的显示面板中，所述色阻层包括有与所述隔垫层相对应且朝所述上基板凸起的色阻载台，所述隔垫层包括主隔垫柱和副隔垫柱，所述主隔垫柱对应的所述色阻载台的厚度大于所述副隔垫柱对应的所述色阻载台的厚度。
在本申请实施例的显示面板中，所述色阻载台包括层叠设置的两种不同颜色的色阻。
在本申请实施例的显示面板中，所述色阻载台靠近所述TFT层一侧的色阻为第一颜色色阻或第二颜色色阻，所述主隔垫柱所对应的色阻载台中远离所述TFT层一侧的色阻为第三颜色色阻，所述副隔垫柱所对应的色阻载台中远离所述TFT层一侧的色阻为与所述色阻载台中靠近所述TFT层一侧的色阻颜色相异的第二颜色色阻或第一颜色色阻，所述第三颜色色阻的厚度大于所述第一颜色色阻的厚度，且所述第三颜色色阻的厚度大于所述第二颜色色阻的厚度。
在本申请实施例的显示面板中，所述第一颜色色阻为绿色色阻，所述第二颜色色阻为红色色阻，所述第三颜色色阻为蓝色色阻。
在本申请实施例的显示面板中，所述第一颜色色阻为红色色阻，第二颜色色阻为绿色色阻，所述第三颜色色阻为蓝色色阻。
在本申请实施例的显示面板中，所述主隔垫柱对应的所述色阻载台的厚度与所述副隔垫柱对应的所述色阻载台的厚度的差值为0.19um～0.21um。
在本申请实施例的显示面板中，所述TFT层包括与所述隔垫层相对应设置的凸台，所述主隔垫柱对应的所述凸台的厚度大于所述副隔垫柱对应的所述凸台的厚度。
在本申请实施例的显示面板中，所述TFT层包括设于所述下基板上的第一金属层、设于所述第一金属层和下基板上且覆盖所述第一金属层的第一绝缘层、设于所述第一绝缘层上的有源层、设于所述有源层上的第二金属层、及设于所述第一绝缘层和所述第二金属层上且覆盖所述第二金属层的第二绝缘层；
所述主隔垫柱对应的所述凸台由所述第一金属层、第一绝缘层、有源层、第二金属层和所述第二绝缘层依次堆叠而成，所述副隔垫柱对应的所述凸台由所述第一金属层、第一绝缘层和所述第二绝缘层依次堆叠而成。
在本申请实施例的显示面板中，所述第一金属层包括栅极和与所述栅极连接的栅极走线，所述主隔垫柱对应的所述凸台中的第一金属层为所述栅极，所述副隔垫柱对应的所述凸台中的第一金属层为部分所述栅极走线。
在本申请实施例的显示面板中，所述主隔垫柱对应的所述凸台的厚度与所述副隔垫柱对应的所述凸台的厚度的差值为0.3um～0.5um。
本申请实施例还提供了一种显示面板的制作方法，包括以下步骤：
提供一上基板和下基板，在所述下基板上形成TFT层；
在所述TFT层远离所述下基板的一侧形成色阻层；
在所述色阻层远离所述TFT层的一侧形成隔垫层和黑色矩阵，所述隔垫层与所述黑色矩阵采用同一道制程一体成型；及
将所述上基板与所述下基板对合，所述上基板设置于所述隔垫层远离所述下基板的一侧，并与所述下基板相对设置。
在本申请实施例显示面板的制作方法中，所述色阻层至少包括形成于在所述TFT层上的色阻载台，所述色阻载台包括层叠设置的两种不同颜色的色阻。
在本申请实施例显示面板的制作方法中，所述隔垫层形成于所述色阻载台远离所述TFT层的一侧。
在本申请实施例显示面板的制作方法中，所述隔垫层与所述黑色矩阵通过同一道曝光显影制程一体成型。
在本申请实施例显示面板的制作方法中，所述色阻层通过喷墨打印的方式制作而成。
 有益效果
本申请提供的一种显示面板及其制作方法，通过将黑色矩阵设置于下基板上，防止了曲屏中黑色矩阵偏移导致显示面板漏光和色偏的问题，同时，将隔垫层与黑色矩阵设计为一体成型结构，采用一道制程制作形成所述隔垫层与黑色矩阵，简化了的制作工艺，节约了机台设备、光罩，并提高了产能，同时还不影响隔垫层和黑色矩阵的原有性能。
 附图说明
图1为本申请实施例提供的一种显示面板的结构示意图；及
图2为本申请实施例提供的一种显示面板的制作方法的流程示意框图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
下面结合附图和实施例对本申请作进一步说明。
如图1所示，本申请实施例提供了一种显示面板，包括相对设置的上基板100和下基板200，所述下基板200靠近所述上基板100的一侧设有TFT层300，所述TFT层300远离所述下基板200的一侧设有色阻层400，所述色阻层400远离所述TFT层300的一侧设有隔垫层500和黑色矩阵600，且所述隔垫层500与所述黑色矩阵600为一体成型结构。
可以理解的是，现有的曲面显示面板中需要将BM和PS作为两道制程分别制作，并且BM设于上基板100容易导致BM在上下基板200相对位移较大的曲屏结构中造成位置偏移，从而导致漏光或者色偏；本申请中，所述色阻层400和所述黑色矩阵600均设置于所述下基板200上，在曲面显示中，所述色阻层400与所述黑色矩阵600之间的相对位置不随所述上基板100和所述下基板200的相对位置改变而改变，从而降低了显示面板漏光或者色偏的风险，并且，将所述隔垫层500与所述黑色矩阵600设置为为一体成型结构，也简化了显示面板的制作工艺，提高了制作效率；具体的，所述隔垫层500和所述黑色矩阵600的材料均为黑色光阻材料；此外，如图1所示，在图1中只出示了部分所述隔垫层500与所述黑色矩阵600所对应的非显示区的显示面板结构，而所述黑色矩阵600所对应的显示区的显示面板结构则未在图中出示。
在一实施例中，所述色阻层400包括有与所述隔垫层500相对应且朝所述上基板100凸起的色阻载台410，所述隔垫层500包括主隔垫柱510和副隔垫柱520，所述主隔垫柱510对应的所述色阻载台410的厚度大于所述副隔垫柱520对应的所述色阻载台410的厚度，显然，通过将所述主隔垫柱510和所述副隔垫柱520所对应的所述色阻载台410的厚度进行差异化的设置，更加便于实现所述主隔垫柱510与所述副隔垫柱520之间的高度差，从而达到让所述主隔垫柱510与上基板100接触受到一定程度压缩，并且，让所述副隔垫柱520正常状态不压缩，在受到外界压力时起到辅助支撑作用的效果。
在一实施例中，所述色阻载台410包括层叠设置的两种不同颜色的色阻，所述色阻载台410靠近所述TFT层300一侧的色阻为第一颜色色阻411或第二颜色色阻412，所述主隔垫柱510所对应的色阻载台410中远离所述TFT层300一侧的色阻为第三颜色色阻413，所述副隔垫柱520所对应的色阻载台410中远离所述TFT层300一侧的色阻为与所述色阻载台410中靠近所述TFT层300一侧的色阻颜色相异的第二颜色色阻412或第一颜色色阻411，所述第三颜色色阻413的厚度大于所述第一颜色色阻411的厚度，且所述第三颜色色阻413的厚度大于所述第二颜色色阻412的厚度；可以理解的是，将所述色阻载台410设置成两种不同颜色的色阻层叠的结构，从而整体上提高了所述隔垫层500的高度，而将对应所述主隔垫柱510的第三颜色色阻413厚度设置成均大于所述第一颜色色阻411的厚度和所述第二颜色色阻412的厚度，则是具体实现了所述主隔垫柱510与所述副隔垫柱520之间的高度差。
承上，所述第一颜色色阻411、第二颜色色阻412为绿色色阻、红色色阻的任意一种组合，即在所述色阻载台410中的双层色阻结构中，用于提升所述色阻载台410高度的可以为绿色色阻或红色色阻，并且对应所述主隔垫柱510的所述第三颜色色阻413为蓝色色阻，可以理解的是，在现有色阻的制作工艺中，根据不同颜色光的光学特性，在制作过程中，所述蓝色色阻的高度一般要求大于所述绿色色阻或红色色阻的高度，从而使得所述主隔垫柱510对应的所述色阻载台410的厚度大于所述副隔垫柱520对应的所述色阻载台410的厚度，具体的，所述蓝色色阻的高度与所述绿色色阻或红色色阻的高度差为0.19um～0.21um，使得所述主隔垫柱510对应的所述色阻载台410的厚度与所述副隔垫柱520对应的所述色阻载台410的厚度的差值为0.19um～0.21um；在一实施例中，所述蓝色色阻与所述绿色色阻或红色色阻的高度差可以为0.2um，显然，本申请通过将现有色阻工艺制作中较厚的所述蓝色色阻设置于与所述主隔垫柱510对应的所述色阻载台410中，而未改变现有其它结构的设计，既一定程度达到了所述主隔垫柱510与所述副隔垫柱520之间的高度差的效果，又最大化减小对现有显示面板结构和制作工艺的影响。
在一实施例中，所述TFT层300包括与所述隔垫层500相对应设置的凸台310，所述主隔垫柱510对应的所述凸台310的厚度大于所述副隔垫柱520对应的所述凸台310的厚度，如前所述，将所述主隔垫柱510和所述副隔垫柱520对应的所述凸台310的厚度进行差异化设置，以便于实现所述主隔垫柱510与所述副隔垫柱520之间的高度差，有助于分别实现所述主隔垫柱510与所述副隔垫柱520各自的支撑功能。
在一实施例中，所述TFT层300包括设于所述下基板200上的第一金属层320、设于所述第一金属层320和下基板200上且覆盖所述第一金属层320的第一绝缘层330、设于所述第一绝缘层330上的有源层340、设于所述有源层340上的第二金属层350、及设于所述第一绝缘层330和所述第二金属层350上且覆盖所述第二金属层350的第二绝缘层360；所述主隔垫柱510对应的所述凸台310由所述第一金属层320、第一绝缘层330、有源层340、第二金属层350和所述第二绝缘层360依次堆叠而成，所述副隔垫柱520对应的所述凸台310由所述第一金属层320、第一绝缘层330和所述第二绝缘层360依次堆叠而成。显然，所述主隔垫柱510对应的所述凸台310依次包括第一金属层320、第一绝缘层330、有源层340、第二金属层350和第二绝缘层360，相比于所述副隔垫柱520对应的所述凸台310结构中的第一金属层320、第一绝缘层330和第二绝缘层360，多了所述有源层340和所述第二金属层350的厚度，可以理解的是，所述第一金属层320、第一绝缘层330、有源层340、第二金属层350和第二绝缘层360均为所述TFT层300中常规结构，并且，所述第一金属层320包括栅极321和与所述栅极321连接的栅极走线322，所述主隔垫柱510对应的所述凸台310中的第一金属层320为所述栅极321，所述副隔垫柱520对应的所述凸台310中的第一金属层320为部分所述栅极走线322，具体的，所述栅极走线322包括栅极金属线或存储电容等单层金属；显然，所述栅极321的厚度要大于所述栅极走线322的厚度，综合上述两种所述凸台310之间的结构差异，并结合现有TFT制作工艺要求，所述主隔垫柱510对应的所述凸台310的厚度与所述副隔垫柱520对应的所述凸台310的厚度的差值为0.3um～0.5um。
承上，通过将所述主隔垫柱510设置于所述TFT层300中对应于所述栅极321的位置较高的所述凸台310上，将所述副隔垫柱520设置于所述TFT层300中对应于所述栅极走线322的位置较低的所述凸台310上；实现所述主隔垫柱510与所述副隔垫柱520之间的高度差，通过在所述TFT层300上相对较高的所述凸台310部位设置所述隔垫层500，既不对所述TFT层300结构产生其它影响，又实现了隔垫层500整体垫高，并实现所述主隔垫柱510与所述副隔垫柱520之间的高度差效果。
值得注意的是，通过所述凸台310和所述色阻载台410的垫高效果，实现了所述隔垫层500整体高度的提升，并结合不同所述凸台310之间的高度差异和不同所述色阻载台410之间的高度差异，调整所述主隔垫柱510和所述副隔垫柱520的设置位置，实现了所述主隔垫柱510与所述副隔垫柱520之间的高度差效果，如图1所示，在一体化制作所述黑色矩阵600和所述隔垫层500的过程中，可以是通过涂布黑色色阻材料，然后进行曝光显影，即可制作完成，在一实施例中，无需采用差异化曝光（如采用HTM，half  tone  mask；半色调掩膜）进行制作，如不考虑制作过程中材料的流平效果，所述黑色矩阵600和所述隔垫层500在各处的厚度均相等。
在一实施例中，如图1所示，示例性的，所述色阻层400与所述黑色矩阵600所对应的部分为单层色阻结构，并且，所述色阻载台410虽然设计为双层色阻结构，但并不影响所述色阻层400的整体制作工艺流程，只需改变制作所述色阻时的掩膜结构即可；此外，所述色阻层400上靠近所述黑色矩阵600一侧覆盖有第三绝缘层700，所述第三绝缘层700与所述黑色矩阵600之间、以及所述上基板100靠近所述下基板200的一侧均设有ITO电极，具体的，所述第三绝缘层700的材料为SiNx。
综上所述，通过将黑色矩阵600设置于下基板200上，防止了曲屏中黑色矩阵600偏移导致显示面板漏光和色偏的问题，同时，将隔垫层500与黑色矩阵600设计为一体成型结构，方便简化制作工艺和降低材料成本。
本申请实施例还提供了一种显示面板的制作方法，如图2所示，包括以下步骤：
步骤S10：提供一上基板100和下基板200，在所述下基板200上形成TFT层300；
步骤S20：在所述TFT层300远离所述下基板200的一侧形成色阻层400；
步骤S30：在所述色阻层400远离所述TFT层300的一侧形成隔垫层500和黑色矩阵600，所述隔垫层500与所述黑色矩阵600采用同一道制程一体成型；及
步骤S40：将所述上基板100与所述下基板200对合，所述上基板100设置于所述隔垫层500远离所述下基板200的一侧，并与所述下基板200相对设置。
可以理解的是，在具体制作过程中，是先在所述下基板200上依次制作所述TFT层300、色阻层400、及所述隔垫层500和黑色矩阵600，然后再将所述上基板100与已经制备好各功能层的所述下基板200对合。
在一实施例中，在所述步骤S20中，所述在所述TFT层300远离所述下基板200的一侧形成的色阻层400中，所述色阻层400至少包括形成于在所述TFT层300上的色阻载台410，所述色阻载台410包括层叠设置的两种不同颜色的色阻；
承上，在所述步骤S30中，在所述色阻层400远离所述TFT层300的一侧形成隔垫层500和黑色矩阵600中：
所述隔垫层500形成于所述色阻载台410远离所述TFT层300的一侧。
具体的，所述隔垫层500与所述黑色矩阵600可以采用同一道曝光显影制程一体成型；所述色阻层400可以通过喷墨打印的方式制作而成。
综上，本申请通过将黑色矩阵600设置于下基板200上，防止了曲屏中黑色矩阵600偏移导致显示面板漏光和色偏的问题，同时，将隔垫层500与黑色矩阵600设计为一体成型结构，采用一道制程制作形成所述隔垫层500与黑色矩阵600，简化了的制作工艺，节约了机台设备、光罩，并提高了产能，同时还不影响隔垫层500和黑色矩阵600的原有性能。
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。
以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (16)

  1. 一种显示面板，包括相对设置的上基板和下基板，所述下基板靠近所述上基板的一侧设有TFT层，所述TFT层远离所述下基板的一侧设有色阻层，所述色阻层远离所述TFT层的一侧设有隔垫层和黑色矩阵，且所述隔垫层与所述黑色矩阵为一体成型结构。
  2. 如权利要求1所述的显示面板，其中，所述色阻层包括有与所述隔垫层相对应且朝所述上基板凸起的色阻载台，所述隔垫层包括主隔垫柱和副隔垫柱，所述主隔垫柱对应的所述色阻载台的厚度大于所述副隔垫柱对应的所述色阻载台的厚度。
  3. 如权利要求2所述的显示面板，其中，所述色阻载台包括层叠设置的两种不同颜色的色阻。
  4. 如权利要求3所述的显示面板，其中，所述色阻载台靠近所述TFT层一侧的色阻为第一颜色色阻或第二颜色色阻，所述主隔垫柱所对应的色阻载台中远离所述TFT层一侧的色阻为第三颜色色阻，所述副隔垫柱所对应的色阻载台中远离所述TFT层一侧的色阻为与所述色阻载台中靠近所述TFT层一侧的色阻颜色相异的第二颜色色阻或第一颜色色阻，所述第三颜色色阻的厚度大于所述第一颜色色阻的厚度，且所述第三颜色色阻的厚度大于所述第二颜色色阻的厚度。
  5. 如权利要求4所述的显示面板，其中，所述第一颜色色阻为绿色色阻，所述第二颜色色阻为红色色阻，所述第三颜色色阻为蓝色色阻。
  6. 如权利要求4所述的显示面板，其中，所述第一颜色色阻为红色色阻，第二颜色色阻为绿色色阻，所述第三颜色色阻为蓝色色阻。
  7. 如权利要求2所述的显示面板，其中，所述主隔垫柱对应的所述色阻载台的厚度与所述副隔垫柱对应的所述色阻载台的厚度的差值为0.19um～0.21um。
  8. 如权利要求2所述的显示面板，其中，所述TFT层包括与所述隔垫层相对应设置的凸台，所述主隔垫柱对应的所述凸台的厚度大于所述副隔垫柱对应的所述凸台的厚度。
  9. 如权利要求8所述的显示面板，其中，所述TFT层包括设于所述下基板上的第一金属层、设于所述第一金属层和下基板上且覆盖所述第一金属层的第一绝缘层、设于所述第一绝缘层上的有源层、设于所述有源层上的第二金属层、及设于所述第一绝缘层和所述第二金属层上且覆盖所述第二金属层的第二绝缘层；
    所述主隔垫柱对应的所述凸台由所述第一金属层、第一绝缘层、有源层、第二金属层和所述第二绝缘层依次堆叠而成，所述副隔垫柱对应的所述凸台由所述第一金属层、第一绝缘层和所述第二绝缘层依次堆叠而成。
  10. 如权利要求9所述的显示面板，其中，所述第一金属层包括栅极和与所述栅极连接的栅极走线，所述主隔垫柱对应的所述凸台中的第一金属层为所述栅极，所述副隔垫柱对应的所述凸台中的第一金属层为部分所述栅极走线。
  11. 如权利要求8所述的显示面板，其中，所述主隔垫柱对应的所述凸台的厚度与所述副隔垫柱对应的所述凸台的厚度的差值为0.3um～0.5um。
  12. 一种显示面板的制作方法，包括以下步骤：
    提供一上基板和下基板，在所述下基板上形成TFT层；
    在所述TFT层远离所述下基板的一侧形成色阻层；
    在所述色阻层远离所述TFT层的一侧形成隔垫层和黑色矩阵，所述隔垫层与所述黑色矩阵采用同一道制程一体成型；及
    将所述上基板与所述下基板对合，所述上基板设置于所述隔垫层远离所述下基板的一侧，并与所述下基板相对设置。
  13. 如权利要求12所述显示面板的制作方法，其中，所述色阻层至少包括形成于在所述TFT层上的色阻载台，所述色阻载台包括层叠设置的两种不同颜色的色阻。
  14. 如权利要求13所述显示面板的制作方法，其中所述隔垫层形成于所述色阻载台远离所述TFT层的一侧。
  15. 如权利要求12所述显示面板的制作方法，其中，所述隔垫层与所述黑色矩阵通过同一道曝光显影制程一体成型。
  16. 如权利要求12所述显示面板的制作方法，其中，所述色阻层通过喷墨打印的方式制作而成。
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