WO2021114366A1 - 发光器件及其制备方法 - Google Patents
发光器件及其制备方法 Download PDFInfo
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- WO2021114366A1 WO2021114366A1 PCT/CN2019/126877 CN2019126877W WO2021114366A1 WO 2021114366 A1 WO2021114366 A1 WO 2021114366A1 CN 2019126877 W CN2019126877 W CN 2019126877W WO 2021114366 A1 WO2021114366 A1 WO 2021114366A1
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- Prior art keywords
- layer
- light
- transport
- emitting
- emitting device
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 74
- 239000000243 solution Substances 0.000 claims description 45
- 230000005540 biological transmission Effects 0.000 claims description 23
- 150000002736 metal compounds Chemical class 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- 238000001704 evaporation Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 6
- 230000005525 hole transport Effects 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 141
- 230000032258 transport Effects 0.000 description 58
- 238000010586 diagram Methods 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 3
- -1 methylamine (MA+) Chemical class 0.000 description 3
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical compound NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002892 organic cations Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
Definitions
- This application relates to the field of display technology, in particular to a light-emitting device and a preparation method thereof.
- the main technical problem solved by this application is that since most organic light-emitting materials exhibit unipolar transmission and have different transport properties for different carriers, resulting in an imbalance in the injection rate and transmission rate of electrons and holes, the light-emitting device emits light. The efficiency is greatly reduced.
- the present application provides a light-emitting device, including: an anode, a light-emitting layer, and a cathode that are stacked, and the material of the light-emitting layer includes a perovskite material;
- a first transport layer is further provided between the light-emitting layer and the anode, and the first transport layer is used to transport holes;
- a second transport layer is further provided between the cathode and the light-emitting layer, and the second transport layer is used to transport electrons.
- the first transport layer includes one or more of a hole injection layer, a hole transport layer, and an electron blocking layer.
- the second transport layer includes one or more of an electron injection layer, an electron transport layer, and a hole blocking layer.
- the cathode includes a metal compound layer and a metal layer
- the metal compound layer is directly arranged on the perovskite light-emitting layer, and the metal layer is arranged on the first cathode layer;
- the metal compound layer is directly disposed on the second transport layer, and the metal layer is disposed on the first cathode layer.
- the thickness of the metal compound layer is between 0.5 nanometers and 1.5 nanometers, and the thickness of the metal layer is between 90 nanometers and 110 nanometers.
- the thickness of the light-emitting layer is greater than 120 nanometers.
- the present application provides a method for manufacturing a light-emitting device, including:
- the material of the light-emitting layer includes a perovskite material
- a cathode is formed on the light-emitting layer.
- the forming a light-emitting layer on the first transmission layer includes:
- the luminescent material solution is evaporated to obtain a luminescent layer.
- the method includes:
- concentration of the luminescent material solution is greater than the preset concentration, reducing the evaporation rate of evaporating the luminescent material solution according to the concentration of the luminescent material solution;
- the evaporating the luminescent material solution to obtain the luminescent layer includes: evaporating the luminescent material solution according to the evaporation rate to obtain the luminescent layer.
- the present application provides a method for manufacturing a light-emitting device, including:
- a cathode is formed on the second transport layer.
- the beneficial effects of the present application are: wherein a first transport layer is further provided between the light-emitting layer and the anode, and the first transport layer is used to transport holes; or, between the cathode and the calcium
- a second transport layer is also arranged between the titanium ore light-emitting layers, and the second transport layer is used to transport electrons.
- FIG. 1 is a schematic structural diagram of a first embodiment of a light emitting device provided by this application;
- FIG. 2 is a schematic structural diagram of a second embodiment of a light emitting device provided by this application.
- FIG. 3 is a schematic structural diagram of a first embodiment of a method for manufacturing a light-emitting device provided by this application;
- FIG. 5 is a schematic structural diagram of a second embodiment of the method for manufacturing a light-emitting device provided by this application;
- FIG. 6 is a schematic diagram of the steps of the second embodiment of the method for manufacturing a light-emitting device provided by this application.
- FIG. 1 is a schematic structural diagram of a first embodiment of a light emitting device provided by this application
- FIG. 2 is a schematic structural diagram of a second embodiment of a light emitting device provided by this application.
- the present application provides a light-emitting device 1 including an anode 10, a light-emitting layer 20, and a cathode 30 that are stacked, and the material of the light-emitting layer 20 includes a perovskite material.
- a first transport layer 50 is further provided between the light-emitting layer 20 and the anode 10, and the first transport layer 50 is used to transport holes.
- the perovskite material used in this application can be an ABX3 type perovskite material, where A can be an organic cation, such as methylamine (MA+), formamidine (FA+) or cesium (Cs+) , B can be lead (Pb2+) or tin (Sn2+), and X can be a halogen anion, such as chlorine (Cl-), bromine (Br-) or iodine (I-).
- perovskite materials Compared with general organic light-emitting materials, perovskite materials have excellent photoelectric properties. It can efficiently complete multiple processes such as excitation, transport and separation of carriers at the same time. More importantly, perovskite materials have excellent double The polar carrier transport property can efficiently transport electrons and holes.
- the first transport layer 50 is used to transport holes
- the light-emitting layer 20 is used to transport electrons and holes
- the light-emitting layer 20 transports holes.
- the transport lengths of electrons and holes are both greater than 1 micron, and the light-emitting layer 20 can also achieve light emission.
- the first transport layer 50 may include one or more of a hole injection layer, a hole transport layer, and an electron blocking layer, which are specifically set according to actual conditions, and will not be repeated here.
- the thickness of the light-emitting layer 20 is greater than 120 nanometers.
- the light-emitting layer 20 of the light-emitting device 1 provided in the present application adopts perovskite materials, which reduces the interface transmission, so that the luminous efficiency of the light-emitting device 1 can be improved, and the manufacturing process complexity is greatly reduced. And, there is a wider range of hole transport materials to choose from.
- FIG. 2 This application also provides a light-emitting device 1.
- the difference between the light-emitting device 1 shown in FIG. 2 and the light-emitting device 1 of FIG. A second transport layer 60 is provided, and the second transport layer 60 is used to transport electrons.
- the second transport layer 60 includes one or more of an electron injection layer, an electron transport layer, and a hole blocking layer, which are specifically set according to actual conditions, and will not be repeated here.
- the light-emitting layer 20 is used to transport electrons and holes.
- the transport length of the light-emitting layer 20 for electrons and holes is greater than 1 micron, and the light-emitting layer 20 Light can also be achieved.
- the light-emitting layer 20 of the light-emitting device 1 provided in the present application adopts perovskite materials, which reduces the interface transmission, so that the luminous efficiency of the light-emitting device 1 can be improved, and the manufacturing process complexity is greatly reduced. And, there is a wider range of hole transport materials to choose from.
- the cathode includes a metal compound layer 301 and a metal layer 302.
- the metal compound layer 301 is provided on the light-emitting layer 20, and the metal layer 302 is provided on the metal compound layer 301, as shown in FIG.
- the metal compound layer 301 is disposed on the second transmission layer 60, and the metal layer 302 is disposed on the metal compound layer 301, as shown in FIG. 2.
- the thickness of the metal compound layer 301 is between 0.5 nanometers and 1.5 nanometers, and the thickness of the metal layer 302 is between 90 nanometers and 110 nanometers.
- the material of the metal compound layer 301 may be lithium fluoride
- the material of the metal layer 302 may be aluminum
- the thickness of the metal compound layer 301 may be 1 nanometer
- the thickness of the metal layer 302 may be 100 nanometers.
- the transmission rate of electrons can be increased, and the light-emitting efficiency of the light-emitting device 1 can be further improved.
- the cathode 30 can also have a single-layer structure, and silver can be used as the material of the cathode 30, as long as its low work function meets the requirements of the cathode 30, and will not be repeated here.
- the present application also provides a method for manufacturing a light-emitting device.
- the method for manufacturing a light-emitting device includes:
- the first transport layer is used to transport holes, and the material of the light-emitting layer includes perovskite material.
- a layer of luminescent material solution is coated on the surface of the first transmission layer 50.
- the luminescent material solution may be a perovskite solution, which may be spin-coated on the surface of the first transmission layer 50. Coated.
- the luminescent material solution is vapor-deposited to obtain the luminescent layer 20.
- the cathode material is deposited on the surface of the light-emitting layer 20, or vapor deposition can be used to form the cathode 30 on the surface of the light-emitting layer 20.
- the vapor deposition rate of the vapor-deposited light-emitting layer 20 can be adjusted, that is, in some embodiments, the light-emitting material is coated on the surface of the first transmission layer.
- the solution before evaporating the luminescent material solution to obtain the luminescent layer, it may specifically include:
- the concentration of the luminescent material solution is greater than the preset concentration, the evaporation rate of the luminescent material solution is reduced according to the concentration of the luminescent material solution.
- the current vapor deposition rate is 5 micrometers per minute, and the current vapor deposition rate can be reduced to 2.5 micrometers per minute.
- the evaporation rate of the evaporated luminescent material solution can be increased, that is, after the luminescent material solution is coated on the surface of the first transport layer, the evaporation rate
- the luminescent material solution, before obtaining the luminescent layer specifically may further include:
- an anode before providing an anode, it may specifically include:
- (31) Provide a base.
- the present application provides a method for manufacturing a light-emitting device, including: providing an anode, forming a first transmission layer on the anode, forming a light-emitting layer on the first transmission layer, and forming a cathode on the light-emitting layer.
- the preparation of a perovskite light-emitting layer reduces the interface transmission, so that the luminous efficiency of the light-emitting device 1 can be improved, and at the same time, the complexity of the preparation process is greatly reduced, thereby reducing the process cost.
- the manufacturing method of the light-emitting device includes:
- a cathode is formed on the second transport layer.
- the second transport layer is used to transport electrons
- the material of the light-emitting layer includes perovskite material.
- a layer of luminescent material solution is coated on the surface of the anode 10.
- the luminescent material solution may be a perovskite solution, which may be coated on the surface of the anode 10 by spin coating.
- the luminescent material solution is vapor-deposited to obtain the luminescent layer 20.
- a second transmission layer 60 is vapor-deposited on the surface of the light-emitting layer 20, and finally a cathode material is deposited on the surface of the second transmission layer 60, or vapor deposition can be used to deposit the second transmission layer 60 A cathode 30 is formed on the surface.
- the present application provides a method for manufacturing a light-emitting device, including: providing an anode; forming a light-emitting layer on the anode, forming a second transport layer on the light-emitting layer, forming a cathode on the second transport layer, and forming a cathode on the anode.
- the preparation of a perovskite light-emitting layer on the upper layer reduces the interface transmission, so that the luminous efficiency of the light-emitting device 1 can be improved, and at the same time, the complexity of the preparation process is greatly reduced, thereby reducing the process cost.
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
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- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
一种发光器件(1)及其制备方法,所述发光器件(1)包括:层叠设置的阳极(10)、发光层(20)以及阴极(30),所述发光层(20)的材料包括钙钛矿材料;其中,在所述发光层(20)与所述阳极(10)之间还设置有第一传输层(50),所述第一传输层(50)用于传输空穴;或者,在所述阴极(30)与所述钙钛矿发光层(20)之间还设置有第二传输层(60),所述第二传输层(60)用于传输电子。
Description
本申请涉及显示技术领域,具体涉及一种发光器件及其制备方法。
现有的发光器件中,由于大多数有机发光材料呈现单极性传输,对不同的载流子传输性质不同,从而导致电子和空穴的注入速率和传输速率不平衡,所以发光器件的发光效率大大降低。
本申请主要解决的技术问题,由于大多数有机发光材料呈现单极性传输,对不同的载流子传输性质不同,从而导致电子和空穴的注入速率和传输速率不平衡,所以发光器件的发光效率大大降低。
第一方面,本申请提供了一种发光器件,包括:层叠设置的阳极、发光层以及阴极,所述发光层的材料包括钙钛矿材料;
其中,在所述发光层与所述阳极之间还设置有第一传输层,所述第一传输层用于传输空穴;
或者,在所述阴极与所述发光层之间还设置有第二传输层,所述第二传输层用于传输电子。
在本申请所提供的发光器件中,所述第一传输层包括空穴注入层、空穴传输层以及电子阻挡层中的一种或多种。
在本申请所提供的发光器件中,所述第二传输层包括电子注入层、电子传输层以及空穴阻挡层中的一种或多种。
在本申请所提供的发光器件中,所述阴极包括金属化合物层和金属层;
其中,所述金属化合物层直接设置在所述钙钛矿发光层上,所述金属层设置在所述第一阴极层上;
或者,所述金属化合物层直接设置在所述第二传输层上,所述金属层设置在所述第一阴极层上。
在本申请所提供的发光器件中,所述金属化合物层的厚度介于0.5纳米至1.5纳米之间,所述金属层的厚度介于90纳米至110纳米之间。
在本申请所提供的发光器件中,所述发光层的厚度大于120纳米。
第二方面,本申请提供了一种发光器件的制备方法,包括:
提供一阳极;
在所述阳极上形成第一传输层,所述第一传输层用于传输空穴;
在所述第一传输层上形成发光层,所述发光层的材料包括钙钛矿材料;
在所述发光层上形成阴极。
在本申请所提供的制备方法中,所述在所述第一传输层上形成发光层,包括:
在所述第一传输层的表面上涂敷发光材料溶液;
蒸镀所述发光材料溶液,得到发光层。
在本申请所提供的制备方法中,所述在所述第一传输层的表面上涂敷发光材料溶液之后,所述蒸镀所述发光材料溶液,得到发光层之前,包括:
检测所述发光材料溶液的浓度是否大于预设浓度;
若所述发光材料溶液的浓度大于预设浓度,则根据所述发光材料溶液的浓度,降低蒸镀所述发光材料溶液的蒸镀速率;
所述蒸镀所述发光材料溶液,得到发光层,包括:根据所述蒸镀速率蒸镀所述发光材料溶液,得到发光层。
第三方面,本申请提供了一种发光器件的制备方法,包括:
提供一阳极;
在所述阳极上形成发光层,所述发光层的材料包括钙钛矿材料;
在所述发光层上形成,第二传输层,所述第二传输层用于传输电子;
在所述第二传输层上形成阴极。
本申请的有益效果是:其中,在所述发光层与所述阳极之间还设置有第一传输层,所述第一传输层用于传输空穴;或者,在所述阴极与所述钙钛矿发光层之间还设置有第二传输层,所述第二传输层用于传输电子。本申请提供的发光器件及其制备方法能够提高发光器件的发光效率。
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本申请提供的发光器件的第一种实施方式的结构示意图;
图2为本申请提供的发光器件的第二种实施方式的结构示意图;
图3为本申请提供的发光器件的制备方法的第一种实施方式的结构示意图;
图4为本申请提供的发光器件的制备方法的第一种实施方式的步骤示意图;
图5为本申请提供的发光器件的制备方法的第二种实施方式的结构示意图;
图6为本申请提供的发光器件的制备方法的第二种实施方式的步骤示意图。
下面详细描述本申请的实施方式,所述实施方式的示例在附图中示出,其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的,仅用于解释本申请,而不能理解为对本申请的限制。
请参阅图1以及图2,图1为本申请提供的发光器件的第一种实施方式的结构示意图,图2为本申请提供的发光器件的第二种实施方式的结构示意图。本申请提供一种发光器件1,包括层叠设置的阳极10、发光层20以及阴极30,发光层20的材料包括钙钛矿材料。
在一些实施例中,请参阅图1,在,发光层20与阳极10之间还设置有第一传输层50,第一传输层50用于传输空穴。在此,需要说明的是,本申请采用的钙钛矿材料可以为ABX3型钙钛矿材料,其中,A可以为有机阳离子,如甲胺(MA+)、甲脒(FA+)或者铯(Cs+),B可以为铅(Pb2+)或者锡(Sn2+),X可以为卤素阴离子,如氯(Cl-)、溴(Br-)或碘(I-)。与一般的有机发光材料相比,钙钛矿材料光电性能优异,它能同时高效完成载流子的激发、输运及分离等多个过程,更重要的是,钙钛矿材料具备优良的双极性载流子输运性质能高效传输电子和空穴,在本实施例中,由于第一传输层50用于传输空穴,则发光层20用于传输电子以及空穴,发光层20传输电子以及空穴的输运长度均大于1微米,且发光层20还可以实现发光。
在一些实施例中,第一传输层50可以包括空穴注入层、空穴传输层以及电子阻挡层中的一种或多种,具体根据实际情况进行设置,在此不再赘述。
在一些实施例中,发光层20的厚度大于120纳米。
相较于常规的发光器件而言,本申请提供的发光器件1的发光层20采用钙钛矿材料,减少了界面传输,因此可以提高发光器件1的发光效率,同时大大降低了制备工艺复杂度,而且,可供选择空穴传输材料范围也更广。
在一些实施例中,请参阅图2,本申请还提供一种发光器件1,图2所示的发光器件1与图1的发光器件1的区别在于:在阴极30与发光层20之间还设置有第二传输层60,第二传输层60用于传输电子。
在一些实施例中,第二传输层60包括电子注入层、电子传输层以及空穴阻挡层中的一种或多种,具体根据实际情况进行设置,在此不再赘述。
在本实施例中,由于第二传输层60用于传输电子,则发光层20用于传输电子以及空穴,发光层20传输电子以及空穴的输运长度均大于1微米,且发光层20还可以实现发光。相较于常规的发光器件而言,本申请提供的发光器件1的发光层20采用钙钛矿材料,减少了界面传输,因此可以提高发光器件1的发光效率,同时大大降低了制备工艺复杂度,而且,可供选择空穴传输材料范围也更广。
进一步的,阴极包括金属化合物层301和金属层302。在一些实施例中,金属化合物层301设置在发光层20上,金属层302设置在金属化合物层301上,如图1所示。在一些实施例中,金属化合物层301设置在第二传输层60上,金属层302设置在金属化合物层301上,如图2所示。
在一些实施例中,金属化合物层301的厚度介于0.5纳米至1.5纳米之间,金属层302的厚度介于90纳米至110纳米之间。
比如,金属化合物层301的材料可以为氟化锂,金属层302的材料可以为铝,金属化合物层301的厚度可以为1纳米,金属层302的厚度可以为100纳米。
通过将阴极30设置为两层叠层结构,并且将靠近发光层20的一层设置为金属氧化层301,可以提高电子的传输速率,进而进一步提高发光器件1的发光效率。
当然,阴极30还可以为单层结构,可以采用如银作为阴极30的材料,只要其低功函数满足阴极30的需求即可,在此不再赘述。
相应的,本申请还提供一种发光器件的制备方法,在一些实施例中,请参阅图3,该发光器件的制备方法包括:
110、提供一阳极。
120、在阳极上形成第一传输层。
130、在第一传输层上形成发光层。
140、在发光层上形成阴极。
其中,第一传输层用于传输空穴,发光层的材料包括钙钛矿材料。比如,请参阅图4,首先在第一传输层50的表面上涂敷一层发光材料溶液,该发光材料溶液可以为钙钛矿溶液,可以采用旋涂的方式在第一传输层50的表面涂敷。接着,蒸镀该发光材料溶液,得到发光层20。最后,在发光层20的表面上沉积阴极材料,还是可以采用蒸镀的方式,以在发光层20的表面上形成阴极30。
需要说明的是,为了使得发光层20的厚度与预设厚度一致,可以调节蒸镀发光层20的蒸镀速率,即,在一些实施例中,在第一传输层的表面上涂敷发光材料溶液之后,蒸镀所述发光材料溶液,得到发光层之前,具体还可以包括:
(11)检测发光材料溶液的浓度是否大于预设浓度。
(12)若发光材料溶液的浓度大于预设浓度,则根据发光材料溶液的浓度,降低蒸镀发光材料溶液的蒸镀速率。
比如,当发光材料溶液的浓度为10摩尔,预设浓度为5摩尔时,当前的蒸镀速率为5微米每分钟,可以将当前的蒸镀速率降低至2.5微米每分钟。
另外,在一些实施例中,当发光材料溶液的浓度小于预设浓度,可以提高蒸镀发光材料溶液的蒸镀速率,即,在第一传输层的表面上涂敷发光材料溶液之后,蒸镀所述发光材料溶液,得到发光层之前,具体还可以包括:
(21)检测发光材料溶液的浓度是否小于预设浓度。
(22)若发光材料溶液的浓度大于预设浓度,则根据发光材料溶液的浓度,提高蒸镀发光材料溶液的蒸镀速率。
另外,在一些实施例中,提供一阳极之前,具体还可以包括:
(31)提供一基底。
(32)对基底的表面进行紫外臭氧处理,得到阳极。
本申请提供一种发光器件的制备方法,包括:提供一阳极,在阳极上形成第一传输层,在第一传输层上形成发光层,在发光层上形成阴极,通过在第一传输层上制备一层钙钛矿发光层,减少了界面传输,因此可以提高发光器件1的发光效率,同时大大降低了制备工艺复杂度,进而降低了工艺成本。
在一些实施例中,请参阅图5,该发光器件的制备方法包括:
210、提供一阳极;
220、在阳极上形成发光层。
230、在发光层上形成第二传输层。
240、在第二传输层上形成阴极。
其中,该第二传输层用于传输电子,发光层的材料包括钙钛矿材料。比如,请参阅图6,首先在阳极10的表面上涂敷一层发光材料溶液,该发光材料溶液可以为钙钛矿溶液,可以采用旋涂的方式在阳极10的表面涂敷。接着,蒸镀该发光材料溶液,得到发光层20。接着,在发光层20的表面上蒸镀一层第二传输层60,最后在该第二传输层60的表面上沉积阴极材料,还是可以采用蒸镀的方式,以在第二传输层60的表面上形成阴极30。
本申请提供一种发光器件的制备方法,包括:提供一阳极;在所述阳极上形成发光层,在所述发光层上形成第二传输层,在第二传输层上形成阴极,通过在阳极上制备一层钙钛矿发光层,减少了界面传输,因此可以提高发光器件1的发光效率,同时大大降低了制备工艺复杂度,进而降低了工艺成本。
以上对本申请实施例提供的发光器件及其制备方法进行了详细介绍,本文中应用了具体个例对本申请的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本申请。同时,对于本领域的技术人员,依据本申请的思想,在具体实施方式及应用范围上均会有改变之处,综上所述,本说明书内容不应理解为对本申请的限制。
Claims (10)
- 一种发光器件,其包括:层叠设置的阳极、发光层以及阴极,所述发光层的材料包括钙钛矿材料;其中,在所述发光层与所述阳极之间还设置有第一传输层,所述第一传输层用于传输空穴;或者,在所述阴极与所述发光层之间还设置有第二传输层,所述第二传输层用于传输电子。
- 根据权利要求1所述的发光器件,其中,所述第一传输层包括空穴注入层、空穴传输层以及电子阻挡层中的一种或多种。
- 根据权利要求1所述的发光器件,其中,所述第二传输层包括电子注入层、电子传输层以及空穴阻挡层中的一种或多种。
- 根据权利要求1所述的发光器件,其中,所述阴极包括金属化合物层和金属层;所述金属化合物层设置在所述发光层上,所述金属层设置在所述金属化合物层上;或者,所述金属化合物层设置在所述第二传输层上,所述金属层设置在所述金属化合物层上。
- 根据权利要求4所述的发光器件,其中,所述金属化合物层的厚度介于0.5纳米至1.5纳米之间,所述金属层的厚度介于90纳米至110纳米之间。
- 根据权利要求1所述的发光器件,其中,所述发光层的厚度大于120纳米。
- 一种发光器件的制备方法,其包括:提供一阳极;在所述阳极上形成第一传输层,所述第一传输层用于传输空穴;在所述第一传输层上形成发光层,所述发光层的材料包括钙钛矿材料;在所述发光层上形成阴极。
- 根据权利要求6所述的制备方法,其中,所述在所述第一传输层上形成发光层,包括:在所述第一传输层的表面上涂敷发光材料溶液;蒸镀所述发光材料溶液,得到发光层。
- 根据权利要求8所述的制备方法,其中,所述在所述第一传输层的表面上涂敷发光材料溶液之后,所述蒸镀所述发光材料溶液,得到发光层之前,包括:检测所述发光材料溶液的浓度是否大于预设浓度;若所述发光材料溶液的浓度大于预设浓度,则根据所述发光材料溶液的浓度,降低蒸镀所述发光材料溶液的蒸镀速率;所述蒸镀所述发光材料溶液,得到发光层,包括:根据所述蒸镀速率蒸镀所述发光材料溶液,得到发光层。
- 一种发光器件的制备方法,其包括:提供一阳极;在所述阳极上形成发光层,所述发光层的材料包括钙钛矿材料;在所述发光层上形第二传输层,所述第二传输层用于传输电子;在所述第二传输层上形成阴极。
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