WO2021112555A1 - 표시 장치 - Google Patents

표시 장치 Download PDF

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Publication number
WO2021112555A1
WO2021112555A1 PCT/KR2020/017453 KR2020017453W WO2021112555A1 WO 2021112555 A1 WO2021112555 A1 WO 2021112555A1 KR 2020017453 W KR2020017453 W KR 2020017453W WO 2021112555 A1 WO2021112555 A1 WO 2021112555A1
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WIPO (PCT)
Prior art keywords
module substrate
light emitting
substrate
support substrate
module
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2020/017453
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English (en)
French (fr)
Korean (ko)
Inventor
이정훈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Semiconductor Co Ltd
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Seoul Semiconductor Co Ltd
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Filing date
Publication date
Application filed by Seoul Semiconductor Co Ltd filed Critical Seoul Semiconductor Co Ltd
Priority to KR1020227015297A priority Critical patent/KR102893346B1/ko
Priority to EP20896330.6A priority patent/EP4064261A4/en
Priority to JP2022533189A priority patent/JP7670712B2/ja
Priority to CN202080083289.1A priority patent/CN114762027B/zh
Publication of WO2021112555A1 publication Critical patent/WO2021112555A1/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30Active-matrix LED displays
    • H10H29/45Active-matrix LED displays comprising two substrates, each having active devices thereon, e.g. displays comprising LED arrays and driving circuitry on different substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/021Manufacture or treatment of multiple TFTs
    • H10D86/0212Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441Interconnections, e.g. scanning lines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0364Manufacture or treatment of packages of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30Active-matrix LED displays
    • H10H29/49Interconnections, e.g. wiring lines or terminals

Definitions

  • the present invention relates to a display device, and more particularly, to a large-area multi-module display device.
  • a display device using a light emitting diode is obtained by forming structures of red (Red, R), green (Green, G), and blue (Blue, B) light emitting diodes (LEDs) individually grown on a final substrate.
  • the present invention provides a high-quality large-area multi-module display device and a manufacturing method thereof.
  • a display device includes a module substrate, a plurality of display modules each including a plurality of light emitting devices mounted on the module substrate, and a support substrate on which the plurality of display modules are disposed. . Through holes passing through the module substrate and vias provided in the through holes are provided in each of the module substrates, and the light emitting devices are electrically connected to wirings on the support substrate through the vias.
  • each of the vias includes an upper pad provided on an upper surface of the module substrate, a lower pad provided on a lower surface of the module substrate, and internal electrodes provided in the through holes, the lower pad comprising: It may be connected to the support substrate in a ball grid array (BGA) manner.
  • BGA ball grid array
  • the display device may further include connection wires provided on a lower surface of the module substrate, and the connection wires may be electrically connected to the wires of the support substrate.
  • the module substrate may have a plurality of depressions recessed from a lower surface of the module substrate, and the connection wires may be provided in the depressions.
  • the module substrate includes a pixel region in which the light emitting elements are provided to display an image and a non-pixel region surrounding the pixel region, and some or all of the connection wires are in the pixel region. can be provided on
  • a portion of the through hole may be provided in the pixel area.
  • some of the through-holes may be provided in a region corresponding to the depression.
  • the support substrate may have a protrusion corresponding to the depression on a surface facing the module substrate.
  • the protrusion includes a conductive material and may be electrically connected to wirings of the supporting substrate.
  • the support substrate may have a conductive electrode portion provided on a surface facing the module substrate, and the via may contact the conductive electrode portion.
  • the support substrate is provided on a surface facing the module substrate and has a hole corresponding to the through hole, and the via is provided integrally to the through hole and the hole to provide the conductive material. It can contact the electrode part.
  • the through hole may be disposed along an edge of the module substrate.
  • a display device may be manufactured by manufacturing a plurality of display modules and providing the plurality of display modules on a support substrate.
  • the manufacturing of each of the plurality of display modules includes forming light emitting devices on a module substrate, forming through-holes in the module substrate, and forming a driving circuit unit on a lower surface of the module substrate and forming the through-holes.
  • the method may include electrically connecting the light emitting devices and the driving circuit unit through the circuit.
  • the through hole may be formed using a laser.
  • the step of polishing an edge of the module substrate on which the light emitting devices are formed may be further included.
  • the step of forming a plurality of depressions by laser processing on the lower surface of the module substrate may be further included.
  • the step of forming connection wires in the recessed portion may be further included, and the step of forming a protrusion at a position corresponding to the recessed portion of the support substrate may be further included.
  • forming a hole in a position corresponding to the through-holes on an upper surface of the support substrate; forming the through-holes and a via in the hole; may be further included.
  • a large-area display device in which problems such as image separation or dark lines appearing on the image are minimized.
  • FIG. 1 is a perspective view schematically illustrating a display device according to an exemplary embodiment.
  • FIG. 2A is a plan view illustrating a portion corresponding to P1 of FIG. 1
  • FIG. 2B is a cross-sectional view taken along line AA′ of FIG. 2A .
  • FIG 3 is a cross-sectional view schematically illustrating a light emitting device according to an embodiment of the present invention.
  • FIG. 4 illustrates a case in which a driving circuit unit is separately provided on a lower surface of a module substrate in a display device according to an embodiment of the present invention.
  • 5A to 5E are diagrams sequentially illustrating a method of manufacturing a display device according to an exemplary embodiment.
  • FIG. 6 is a diagram illustrating a connection structure between a display module and a support substrate in a display device according to an exemplary embodiment.
  • FIG. 7 is a diagram illustrating a connection structure between a display module and a support substrate in a display device according to an exemplary embodiment.
  • FIG. 8 is a structural diagram illustrating a display device according to an exemplary embodiment.
  • FIG. 9 is a plan view illustrating that light emitting devices are arranged in a form different from that of the above-described embodiment according to an embodiment of the present invention, and shows a portion corresponding to P1 of FIG. 1 .
  • FIG. 10A is a plan view illustrating that the light emitting devices are arranged in another form from the above-described embodiment, in an embodiment of the present invention, and shows a portion corresponding to P1 in FIG. 1, and FIG. 10B is shown in FIG. 10A. It is a conceptual diagram simply illustrating the illustrated light emitting device.
  • FIG. 11 is a schematic plan view illustrating that light emitting devices are arranged in another form according to an embodiment of the present invention.
  • the present invention relates to a display device including a pixel.
  • a display device including a pixel.
  • Display devices include televisions, tablets, E-Book display devices, computer monitors, kiosks, digital cameras, game consoles, mobile phones, personal digital assistants (PDAs), large outdoor/indoor billboards, and the like.
  • a display device includes a micro light emitting device.
  • a micro light emitting device may be a device having a width or length on a scale of from about 1 micrometer to about 800 micrometers, or from about 1 micrometer to about 500 micrometers, or from about 10 micrometers to about 300 micrometers.
  • the micro light emitting devices according to an embodiment of the present invention do not necessarily have a width or a length within the above range, and may have a smaller or larger size as needed.
  • all micro light emitting devices are referred to as "light emitting devices”.
  • FIG. 1 is a perspective view schematically illustrating a display device according to an exemplary embodiment.
  • FIG. 2A is a plan view illustrating a portion corresponding to P1 of FIG. 1
  • FIG. 2B is a cross-sectional view taken along line AA′ of FIG. 2A .
  • a display device 100 includes a support substrate 160 and a plurality of display modules 110 disposed on the support substrate 160 . ) is included.
  • Each display module 110 has a pixel area 111 on which an image is displayed, and may be disposed along rows and columns on the support substrate 160 . At least one pixel, preferably a plurality of pixels, may be formed in the pixel region 111 of the display module 110 .
  • the support substrate 160 is formed with the wiring unit and the light emitting devices 130 , and may be provided as rigid or flexible.
  • the support substrate 160 may have a larger area than the individual display modules 110 , and thus a plurality of display modules 110 may be mounted on the support substrate 160 .
  • the display device 100 having a large display screen can be implemented by combining a plurality of display modules 110 .
  • Each of the display modules 110 includes a module substrate 120 and a plurality of light emitting devices 130 mounted on an upper surface of the module substrate 120 .
  • the module substrate 120 of each of the display modules 110 may be made of various materials.
  • the module substrate 120 may be formed of a light-transmitting insulating material.
  • the meaning that the module substrate 120 has “light transmittance” includes not only a transparent case that transmits all light, but also a translucent or partially transparent case such as transmitting only light of a predetermined wavelength or only a portion of light of a small wavelength.
  • the material of the module substrate 120 may include glass, quartz, an organic polymer, an organic-inorganic composite material, and the like.
  • the material of the module substrate 120 is not limited thereto, and is not particularly limited as long as it has light transmittance and insulating properties.
  • the module substrate 120 includes at least one pixel region 111 and a non-pixel region surrounding the pixel region 111 .
  • the pixel area 111 is an area in which pixels are provided, and corresponds to an area in which light emitted from the light emitting device 130 to be described later proceeds and is visually recognized by a user.
  • the non-pixel area is an area except for the pixel area 111 .
  • the non-pixel area is provided on at least one side of the pixel area 111 , and in an embodiment of the present invention is provided to surround the pixel area 111 .
  • At least one light emitting device 130 is provided in the pixel area 111 .
  • a plurality of light emitting devices 130 are provided in the pixel area 111 as an example.
  • the pixel unit 113 is a minimum unit for displaying an image.
  • Each pixel unit 113 may emit white light and/or color light.
  • Each pixel unit 113 may include one pixel emitting one color, but may include a plurality of different pixels so that different colors can be combined to emit white light and/or color light.
  • each display module 110 may include first to third pixels.
  • each pixel unit 113 may include first to third pixels.
  • the first to third pixels may be implemented as first to third light emitting devices 130a, 130b, and 130c. That is, if the light emitted from the first to third pixels is referred to as first to third light, respectively, the first to third light may have different wavelength bands.
  • the first to third lights may correspond to blue, red, and green wavelength bands.
  • the wavelength band of the light emitted by the pixels included in each display module 110 is not limited thereto, and may correspond to cyan, magenta, and yellow wavelength bands.
  • the light emitting devices 130 may be provided for each pixel to provide light of various wavelengths.
  • the light emitting devices 130 include first to third light emitting devices 130a, 130b, which emit light of green, red, and blue wavelength bands as first to third light, respectively. 130c).
  • the first to third light emitting devices 130a, 130b, and 130c may be implemented as blue light emitting diodes, red light emitting diodes, and green light emitting diodes.
  • the first to third lights do not need to have wavelength bands of blue, red, and green, respectively.
  • the light conversion layer may include a material such as a phosphor or quantum dot that converts light of a predetermined wavelength into light of another wavelength.
  • a material such as a phosphor or quantum dot that converts light of a predetermined wavelength into light of another wavelength.
  • red, and/or blue, green, red, and blue light emitting diodes are not necessarily used, and light emitting diodes other than the above colors may be used.
  • red a red light emitting diode may be used, but a blue or ultraviolet light emitting diode may be used, and a light conversion layer emitting red light after absorbing blue light or ultraviolet light may be used.
  • the light emitting devices 130 are formed in a fine size, they may be mounted on a flexible module substrate such as plastic by a method such as transfer.
  • the light emitting device 130 according to an embodiment of the present invention may be an inorganic light emitting device, and unlike an organic light emitting device, it may be formed by growing an inorganic material as a thin film. Accordingly, the manufacturing process may be simple and the yield may be improved.
  • the individually separated light emitting devices 130 can be simultaneously transferred onto a large-area substrate, a large-area display device can be manufactured.
  • the light emitting device made of an inorganic material has advantages in that the luminance is high, the lifespan is long, and the unit cost is low compared to the organic light emitting device.
  • a wiring unit may be disposed on the upper surface of the module substrate 120 , and the wiring unit may include a plurality of wirings (data lines and/or scan lines to be described later).
  • a wiring unit including a plurality of wirings may be formed on the lower surface of the module substrate 120 as well.
  • a wiring part may be provided in the pixel area 111 and the non-pixel area.
  • Wires formed on the lower surface of the module substrate 120 may be connected to a separate driving circuit unit 150 .
  • the driving circuit unit 150 may be manufactured as a separate printed circuit board and disposed on the lower surface of the module board 120 , and then may be connected to wires formed on the lower surface of the module board 120 .
  • Each wire formed on the upper surface of the module substrate 120 may be connected to wires formed on the lower surface of the module substrate 120 through a through hole 121 to be described later, which will be described later.
  • a driving element for driving the light emitting elements 130 as well as a plurality of wires may be formed on the module substrate 120 .
  • the driving element may be a thin film transistor, and each thin film transistor may be connected to each light emitting element 130 according to a driving signal from the outside, thereby turning each light emitting element 130 on or off.
  • first to third light emitting devices 130a, 130b, and 130c may be employed as the first to third light emitting devices 130a, 130b, and 130c.
  • FIG. 3 is a cross-sectional view schematically illustrating a light emitting device 130 according to an embodiment of the present invention.
  • the light emitting device 130 illustrated in FIG. 3 may be any one of the first to third light emitting devices 130a, 130b, and 130c.
  • the light emitting device includes a device substrate 131 , a first semiconductor layer 132 , an active layer 133 , a second semiconductor layer 134 , a first contact electrode 135a , and a second contact electrode 135b . ), an insulating layer 136 , a first contact pad 137a , and a second contact pad 137b .
  • the first semiconductor layer 132 , the active layer 133 , and the second semiconductor layer 134 may include indium gallium nitride (InGaN), gallium nitride (GaN), aluminum indium gallium nitride (AlInGaN), gallium phosphide (GaP), aluminum gallium indium phosphide (AlGaInP), and aluminum gallium phosphide (AlGaP).
  • InGaN indium gallium nitride
  • GaN gallium nitride
  • AlInGaN aluminum indium gallium nitride
  • GaP gallium phosphide
  • AlGaInP aluminum gallium indium phosphide
  • AlGaP aluminum gallium phosphide
  • the first semiconductor layer 132 , the active layer 133 , and the second semiconductor layer 134 may include gallium aluminum arsenide (AlGaAs), gallium arsenide, or gallium arsenide. and gallium arsenide phosphide (GaAsP), aluminum gallium indium phosphide (AlGaInP), and gallium phosphide (GaP).
  • AlGaAs gallium aluminum arsenide
  • AlGaInP aluminum gallium indium phosphide
  • GaP gallium phosphide
  • the first semiconductor layer 132 , the active layer 133 , and the second semiconductor layer 134 may include gallium nitride (GaN), indium gallium nitride (InGaN), It may include aluminum indium gallium nitride (AlInGaN), and zinc selenide (ZnSe).
  • GaN gallium nitride
  • InGaN indium gallium nitride
  • AlInGaN aluminum indium gallium nitride
  • ZnSe zinc selenide
  • the first and second semiconductor layers 132 and 134 may be doped with impurities of opposite types, respectively, and may be n-type or p-type semiconductor layers depending on the type of impurities.
  • the first semiconductor layer 132 may be an n-type semiconductor layer and the second semiconductor layer 134 may be a p-type semiconductor layer.
  • the first semiconductor layer 132 may be a p-type semiconductor layer and the second semiconductor layer 134 may be an n-type semiconductor layer.
  • first semiconductor layer 132 and the second semiconductor layer 134 are each a single layer, these layers may be multi-layered and may also include a superlattice layer.
  • the active layer 133 may include a single quantum well structure or a multi-quantum well structure, and the composition ratio of the nitride-based semiconductor is adjusted to emit a desired wavelength.
  • the second contact electrode 135b is disposed on the first semiconductor layer 132 in which the active layer 133 and the second semiconductor layer 134 are not provided, and the first contact electrode 135a is disposed on the second semiconductor layer 134 . This is placed
  • the first and/or second contact electrodes 135a and 135b may be formed of a single layer or multiple layers.
  • various metals such as Al, Ti, Cr, Ni, Au, Ag, Cu, and alloys thereof, or indium tin oxide (ITO), ZnO, etc. of a transparent conductive oxide layer, etc. may be included.
  • An insulating layer 136 is provided on the first and second contact electrodes 135a and 135b, and a first contact electrode 135a and second contact electrode 135b respectively connected to the insulating layer 136 through a contact hole.
  • a contact pad 137a and a second contact pad 137b are provided.
  • the first contact pad 137a is connected to the first contact electrode 135a and the second contact pad 137b is connected to the second contact electrode 135b, but this is for convenience of description. for, but not limited thereto.
  • the second contact pad 137b may be connected to the first contact electrode 135a and the first contact pad 137a may be connected to the second contact electrode 135b.
  • the first contact pad 137a and/or the second contact pad 137b may be formed of a single layer or a multi-layered metal.
  • metals such as Al, Ti, Cr, Ni, Au, and alloys thereof may be used.
  • the light emitting device 130 may further include a layer having an additional function in addition to the above-described layer.
  • various layers may be further included, such as a reflective layer that reflects light, an additional insulating layer for insulating a specific component, a solder prevention layer for preventing the diffusion of solder, and the like.
  • the light emitting device has first and second contact pads facing upward, but is reversed when mounted on a module substrate so that the first and second contact pads face the upper surface of the module substrate. can be mounted.
  • the first and second contact pads may be electrically connected to a wiring unit provided on the module substrate directly or by using a conductive adhesive member.
  • the display device 100 emits light by being turned on by applying a common voltage and a data signal to the light emitting device 130, The emitted light travels toward the lower surface of the module substrate 120 through the lower module substrate 120 .
  • the display modules 110 have a structure connected to a wiring portion formed on the support substrate 160 , in particular, the conductive electrode portion 163 .
  • Various types of wiring units, circuits (eg, various circuits for driving each pixel), etc. may be provided on the support substrate 160 , and display modules ( A driving signal is provided to the light emitting devices 130 disposed on the 110 .
  • the module substrate 120 of the display module 110 is provided with a structure for connecting the conductive electrode part 163 of the support substrate 160 and the wiring part 125 on the upper surface of the module substrate 120 .
  • through holes 121 penetrating through the module substrate 120 are provided in each of the module substrates 120 .
  • the through-hole 121 may be provided in the non-pixel area instead of the pixel area 111 , and thus may be disposed along the edge of the module substrate 120 .
  • the positions of the through holes 121 are not limited thereto, and although not illustrated, they may be disposed in the pixel area 111 .
  • the through-holes 121 may be provided as the number of light emitting devices 130 and the number of wiring parts 125 connected to the light emitting devices 130 can be connected. was shown as
  • Each of the through holes 121 is formed to penetrate both surfaces of the module substrate 120 .
  • Vias 123 are formed in each of the through holes 121 .
  • Each via 123 corresponds to the upper pad 123a formed on the upper surface of the module substrate 120, the lower pad 123c formed on the lower surface of the module substrate 120, and the inside of the through hole 121, and corresponds to the upper pad ( 123a) and an internal electrode 123b connecting the lower pad 123c.
  • the upper pad 123a is connected to the wiring unit 125 formed on the upper surface of the module substrate 120
  • the lower pad 123c is connected to the wiring unit 125 formed on the lower surface of the module substrate 120 , or a support substrate. It may be connected to the conductive electrode part 163 of 160 .
  • the lower pad 123c is the lower surface of the module substrate 120 . It is connected to the driving circuit unit 150 by the wiring unit 125 provided in the .
  • FIG 4 illustrates a case in which the driving circuit unit 150 is separately provided on the lower surface of the module substrate 120 in the display device 100 according to an embodiment of the present invention.
  • the driving circuit unit 150 may be provided in a single number, but may be provided in two or more as illustrated.
  • the driving circuit unit 150 may include a first driving unit 151 and a second driving unit 153 .
  • the first and second drivers 151 and 153 are electrically connected to the lower pad 123c of the via 123 through the wiring part 125 formed on the lower surface of the module substrate 120 .
  • the first driver 151 and the second driver 153 may be, for example, a scan driver and a data driver.
  • the first driver 151 and the second driver 153 may be provided in the pixel region 111 and/or the region corresponding to the non-pixel region.
  • the lower pad 123c is connected to the conductive electrode unit 163 on the support substrate 160 .
  • a conductive adhesive member 140 such as solder paste is provided between the lower pad 123c and the conductive electrode part 163 .
  • solder paste is provided between the conductive electrode parts 163 of the lower pad 123c of the supporting substrate 160 .
  • the support substrate 160 includes various devices, for example, a timing controller, a memory such as an EEPROM, a circuit such as a voltage source for driving the light emitting device 130 , and various wirings electrically connected to the conductive electrode unit 163 .
  • a wiring unit including the may be formed.
  • a gate driver and a data driver for applying a scan signal and an image signal to a scan line and a data line, respectively, may be formed on the support substrate 160 .
  • driving signals output from various devices on the driving circuit unit 150 or the support substrate 160 are transmitted to the light emitting device 130 through the vias 123 , and accordingly, the light emitting device 130 is turned on or off. and display the image.
  • the display device 100 corresponds to a multi-module display device including a plurality of display modules 110 as described above.
  • 4x5 display modules 110 constitute one display device 100 .
  • each or at least some of the plurality of display modules 110 may be driven independently, or at least some of the display modules 110 are dependent on the other display modules 110 in conjunction with the other display modules 110 .
  • the plurality of display modules 110 are all provided in the same size, but the present invention is not limited thereto, and at least one display module may be provided in a size different from that of the other display modules. Of course it could be. Also, at least one display module may have a different number of pixels from the other display modules, and thus resolution may also have different values. In addition, when the resolution of all regions does not need to be the same, the display device 100 may be manufactured by arranging display modules having different resolutions.
  • each display module 110 may be provided in a shape other than a rectangular shape, and in particular, may be provided in a shape other than a rectangular shape depending on the overall shape of the display device 100 .
  • the support substrate 160 or the number of display modules 110 disposed on the support substrate 160 may vary depending on the size of the display device 100 to be manufactured.
  • the display device having the above structure has problems such as separation of the displayed image or dark lines appearing in the image by minimizing the spaced portion between the display module and the display module adjacent to each other when manufacturing a large-area multi-module display device.
  • the via may be formed in the module substrate itself on which the light emitting devices are mounted, particularly in the non-pixel region immediately adjacent to the pixel region, or may be formed in the pixel region.
  • a separate device for connecting the display module and the support substrate does not need to be provided on the side surface of the module substrate, and thus a space for mounting the separate device on the side surface of the module substrate is omitted. A gap between two display modules adjacent to each other may be minimized.
  • 5A to 5E are diagrams sequentially illustrating a method of manufacturing a display device according to an exemplary embodiment.
  • a plurality of display modules 110 are first manufactured, and then the plurality of display modules 110 are formed on a support substrate 160 . It can be prepared by placing it on
  • a mother substrate 120m is prepared.
  • the mother substrate 120m is provided with the same size as the display module 110 or a larger size.
  • the mother substrate 120m may be formed of a light-transmitting insulating material.
  • the mother substrate 120m may include a pixel region 111 in which the light emitting devices 130 are to be disposed and a non-pixel region surrounding the pixel region 111 . Thereafter, the non-pixel area may extend further outward than the virtual line 120i corresponding to the size of the display module 110 .
  • the wiring unit 125 and the light emitting devices 130 are formed on the mother substrate 120m.
  • the wiring part 125 may be formed by various methods, such as plating or a photo process.
  • the light emitting elements 130 may be individually or in plurality mounted on the mother substrate 120m through transfer.
  • a through hole 121 penetrating the upper and lower surfaces of the mother substrate 120m is formed in the non-pixel region.
  • the through hole 121 may be formed through laser processing.
  • the method of forming the through-hole 121 is not limited thereto, and it goes without saying that the through-hole 121 may be formed by various methods. Vias are formed in the mother substrate 120m in which the through hole 121 is formed. Vias can be easily formed through plating.
  • each display module 110 includes the module substrate 120 and the light emitting device. It is made up of 130.
  • a driving circuit unit may be disposed on the lower surface of the module substrate 120 and the light emitting devices 130 and the driving circuit unit may be electrically connected through the through hole 121 .
  • the display modules 110 completed through the above-described steps are disposed on the support substrate 160 and then electrically connected.
  • a plurality of display modules 110 may be disposed along rows and columns on the support substrate 160 .
  • a conductive adhesive such as solder paste or a solder ball used in a ball grid array is disposed between the display module 110 and the support substrate 160 to electrically connect the display module 110 and the support substrate 160 . have.
  • a display module can be manufactured by simply forming a through hole in the module substrate and a via in the through hole, and the display module can be attached to the support substrate by simple soldering or a ball grid array method. It is possible to manufacture a multi-module display device in a simple and inexpensive manner.
  • connection structure between the display module and the support substrate may be changed in various ways.
  • FIG. 6 and 7 are cross-sectional views illustrating a connection structure between a display module and a support substrate in a display device according to an exemplary embodiment, respectively, corresponding to FIG. 2B .
  • the module substrate 120 may be provided with a plurality of depressions 127 recessed from the lower surface of the module substrate 120 .
  • the depression 127 may be formed by laser processing.
  • a connection wiring 129 may be provided in the recessed portion 127 as a part of the wiring portion 125 formed on the lower surface of the module substrate 120 .
  • the recessed part 127 may be formed so that the recessed cross-section has an inclined surface, or may be formed in a different shape.
  • the connection wiring 129 may be formed in the recessed portion 127 .
  • the connection wiring 129 may be easily formed in the depression 127 by using plating, and even if it is not plated, even if it is not completely disposed in the depression 127 or in the depression 127 , the depression 127 and It may be formed in a region corresponding to the vicinity of the depression 127 .
  • connection wiring 129 may be connected to the driving circuit unit 150 provided on the lower surface of the module substrate 120 , or may be connected to the support substrate 160 facing the lower surface of the module substrate 120 .
  • a conductive electrode part 163 may be formed on the support substrate 160 in a region facing the portion where the connection wiring 129 is formed.
  • a protrusion may be formed on the conductive electrode part 163 of the support substrate 160 in a region corresponding to the recessed part 127 of the connection wiring 129 to be electrically connected to the recessed part 127 .
  • the protrusion may include a conductive material, and thus, when the protrusion and the connection line 129 contact each other, the connection line 129 may be electrically connected to the lines of the support substrate 160 . If the protrusion is a conductive material, the material is not particularly limited, and may be made of, for example, solder paste.
  • connection wiring 129 may be formed using a method such as plating after the formation of the recessed portion 127 , and the protrusion may be formed by connecting the connection wiring 129 and the support substrate 160 thereafter. Can be formed before connecting.
  • some of the through-holes 121 may be provided in the pixel area 111 , and vias 123 may be formed in each of the through-holes 121 .
  • the vias 123 may be provided in the pixel area 111 , and some of the vias 123 may be disposed at positions overlapping the light emitting devices 130 .
  • vias 123 may be provided in regions in which the first and second contact pads of the light emitting devices 130 are formed.
  • the first and second contact pads of the light emitting devices 130 may be connected to the connection wiring 129 provided on the lower surface of the module substrate 120 by the vias 123 disposed in the pixel region 111 .
  • the through-holes 121 and the vias 123 may be formed in a non-pixel region other than the pixel region 111 as in the above-described embodiment, and some of the through-holes 121 and the vias 123 . may be formed in a region corresponding to the depression 127 in the pixel region 111 .
  • the support substrate 160 is provided on a surface facing the module substrate 120 and has a hole corresponding to the through hole 121 , and the via 123 is formed through the through hole 121 . ) and the hole may be provided integrally to contact the conductive electrode part 163 .
  • the support substrate 160 may have a side portion 163b and an upper surface portion 163a to easily electrically contact the via 123 .
  • the through hole 121 and the via 123 may be formed in the hole.
  • the via 123 may be formed by filling the through hole 121 and the hole with a conductive material, or after forming the via 123 with a separate material, it is inserted into the through hole 121 and the hole. can be formed in this way.
  • FIG. 8 is a structural diagram illustrating a display device according to an exemplary embodiment.
  • a display device includes a timing controller 155 , a first driver 151 , a second driver 153 , a wiring unit, and first to third light emitting devices ( 130a, 130b, and 130c).
  • the first driver 151 and the second driver 153 may be a scan driver and a data driver, respectively. Hereinafter, they will be referred to as a scan driver and a data driver.
  • Each pixel is individually connected to the scan driver 151 , the data driver 153 , and the like through wiring units.
  • the timing controller 155 receives various control signals and image data necessary for driving the display device from the outside (eg, a system for transmitting image data). The timing controller 155 rearranges the received image data and transmits it to the data driver 153 . In addition, the timing controller 155 generates scan control signals and data control signals necessary for driving the scan driver 151 and the data driver 153 , and applies the generated scan control signals and data control signals to the scan driver ( 151) and the data driver 153 .
  • the scan driver 151 receives a scan control signal from the timing controller 155 and generates a scan signal in response thereto.
  • the data driver 153 receives a data control signal and image data from the timing controller 155 and generates a data signal corresponding thereto.
  • the wiring unit includes a plurality of signal wirings. Specifically, the wiring unit includes first wirings 103 connecting the scan driver 151 and pixels and second wirings 102 connecting the data driver 153 and pixels. In an embodiment of the present invention, the first wirings 103 may be scan lines, and the second wirings 102 may be data lines. In addition, the wiring unit further includes wirings connecting the timing control unit 155 and the scan driving unit 151 , the timing control unit 155 and the data driving unit 153 , or other components and transmitting corresponding signals.
  • the scan lines 103 provide the scan signal generated by the scan driver 151 to the pixels.
  • the data signal generated by the data driver 153 is output to the data lines 102 .
  • the data signal output to the data lines 102 is input to the pixels of the horizontal display module 110 line selected by the scan signal.
  • the pixels are connected to scan lines 103 and data lines 102 .
  • the pixels selectively emit light in response to a data signal input from the data lines 102 .
  • each pixel emits light with a luminance corresponding to an input data signal.
  • the pixels receiving the data signal corresponding to the black luminance display black by not emitting light during the corresponding frame period.
  • the pixels may be driven in a passive type or an active type.
  • the display device When the display device is actively driven, the display device may be driven by receiving first and second pixel power in addition to the scan signal and the data signal.
  • the light emitting devices may be arranged in various shapes in the pixel area to form a pixel unit.
  • FIG. 9 is a plan view illustrating that light emitting devices are arranged in a form different from that of the above-described embodiment according to an embodiment of the present invention, and shows a portion corresponding to P1 of FIG. 1 .
  • a plurality of light emitting devices 130 may be provided in the pixel region 111 of the module substrate 120 .
  • the plurality of light emitting devices 130 may be arranged in various shapes to form a pixel unit.
  • one pixel unit is configured as the first to third light emitting devices 130a, 130b, and 130c. It is shown that the first to third light emitting devices 130a, 130b, and 130c are arranged in a triangular shape.
  • a plurality of light emitting devices 130 may be arranged in a matrix shape.
  • the first and second light emitting devices 130a, 130b, and 130c may be alternately arranged along a row or column. Alternatively, they may be arranged alternately along both rows and columns.
  • the pixel unit is composed of first to third light emitting elements
  • the first to third light emitting elements when the first to third light emitting elements are arranged, the first light emitting elements, the second light emitting elements, and the third light emitting elements are arranged in a row
  • they may be arranged in a form that is sequentially repeated along a column, or may be arranged in a form that is repeated both along a row and a column.
  • FIG. 10A is a plan view illustrating that light emitting devices are arranged in another form from the above-described embodiment, according to an embodiment of the present invention, and shows a portion corresponding to P1 of FIG. 1 .
  • 10B is a conceptual diagram simply illustrating the light emitting device shown in FIG. 10A.
  • each light emitting device 230 may include a plurality of epitaxial stacks emitting light of different colors.
  • each of the light emitting devices 230 may include first to third epitaxial stacks 231 , 233 , and 235 in which three layers are sequentially stacked, as shown in FIG. 10B .
  • Each epitaxial stack may emit color light of a visible light band among light of several wavelength bands.
  • the first epitaxial stack 231 emits a first color light
  • the second epitaxial stack 233 emits a second color light
  • the third epitaxial stack 235 emits a third color light.
  • the first to third color lights may correspond to different color lights
  • the first to third color lights may be color lights of different wavelength bands sequentially having shorter wavelengths. That is, the first to third color lights may have different wavelength bands, and may be color lights of a short wavelength band having higher energy as the first color light goes from the third color light to the third color light.
  • the first color light may be red light
  • the second color light may be green light
  • the third color light may be blue light.
  • the order of the first to third color lights is not limited thereto, and may be provided in a different order according to the stacking order of the first to third epitaxial stacks 231 , 233 , and 235 .
  • FIG. 11 is a schematic plan view illustrating that light emitting devices are arranged in another form according to an embodiment of the present invention.
  • the light emitting devices 130 ( 130a , 130b , 130c ) according to the present exemplary embodiment are arranged on the display module 110 as described with reference to FIG. 9 .
  • the light emitting devices 130a , 130b , and 130c may be disposed on the auxiliary substrate 141 and arranged on the display module 110 , and thus the pixel unit 113 includes the auxiliary substrate 141 .
  • the auxiliary substrate 141 may be, for example, a sapphire substrate, but is not limited thereto.

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KR1020227015297A KR102893346B1 (ko) 2019-12-02 2020-12-02 표시 장치
EP20896330.6A EP4064261A4 (en) 2019-12-02 2020-12-02 DISPLAY DEVICE
JP2022533189A JP7670712B2 (ja) 2019-12-02 2020-12-02 表示装置
CN202080083289.1A CN114762027B (zh) 2019-12-02 2020-12-02 显示装置

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US201962942567P 2019-12-02 2019-12-02
US62/942,567 2019-12-02
US17/108,981 US11664355B2 (en) 2019-12-02 2020-12-01 Display apparatus
US17/108,981 2020-12-01

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JP7670712B2 (ja) 2025-04-30
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CN213519057U (zh) 2021-06-22
EP4064261A4 (en) 2023-12-13
CN114762027B (zh) 2025-06-06
US20250174608A1 (en) 2025-05-29
JP2023504666A (ja) 2023-02-06
US20210167047A1 (en) 2021-06-03
US12218111B2 (en) 2025-02-04
KR102893346B1 (ko) 2025-12-01
US11664355B2 (en) 2023-05-30
US20230268323A1 (en) 2023-08-24

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