WO2021095323A1 - Dispositif à semi-conducteur et dispositif de conversion de puissance - Google Patents

Dispositif à semi-conducteur et dispositif de conversion de puissance Download PDF

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Publication number
WO2021095323A1
WO2021095323A1 PCT/JP2020/032178 JP2020032178W WO2021095323A1 WO 2021095323 A1 WO2021095323 A1 WO 2021095323A1 JP 2020032178 W JP2020032178 W JP 2020032178W WO 2021095323 A1 WO2021095323 A1 WO 2021095323A1
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Prior art keywords
switching elements
metal member
terminal
semiconductor device
diode
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PCT/JP2020/032178
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English (en)
Japanese (ja)
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貴夫 三井
新也 矢野
太郎 木村
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三菱電機株式会社
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Priority to JP2021555908A priority Critical patent/JP7146113B2/ja
Publication of WO2021095323A1 publication Critical patent/WO2021095323A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Definitions

  • the present disclosure relates to a semiconductor device having a freewheeling diode connected in antiparallel to a plurality of switching elements.
  • MOSFET Metal-Oxide-Semiconductor Field-Effective Transistor
  • switching element a semiconductor element
  • body diode For example, in the case of a SiC-MOSFET made of silicon carbide (SiC), which is one of the wideband gap semiconductors, when a current is passed through the body diode, the basal plane shift introduced during crystal growth of the SiC-MOSFET becomes a stacking defect. It is known that it causes conduction deterioration such as growth and increases the on-resistance of the SiC-MOSFET.
  • a method of suppressing the current flowing through the body diode by using a freewheeling diode is known.
  • a semiconductor device including a SiC-MOSFET having a built-in body diode and a freewheeling diode connected in antiparallel to the SiC-MOSFET the value of the forward voltage drop of the body diode is increased, or the freewheeling diode is used.
  • a method of preventing conduction deterioration is known by increasing the rated current so that the maximum value of the current flowing through the body diode is 1/10 or more and 1/3 or less of the rated current of the semiconductor device (for example).
  • Patent Document 1 Patent Document 1
  • Patent Document 1 describes specific mounting methods such as mounting positions of SiC-MOSFETs and freewheeling diodes on the upper and lower arms of semiconductor devices, and methods of connecting SiC-MOSFETs and freewheeling diodes to positive electrode terminals and negative electrode terminals. Not. Further, it is described that the freewheeling current exceeding the permissible current of the SiC Schottky barrier diode (SBD), which is a freewheeling diode, flows evenly to each of the body diodes of the four SiC-MOSFETs.
  • SBD SiC Schottky barrier diode
  • the mounting method does not take into consideration the diversion of the return current flowing through the body diodes of each of the plurality of SiC-MOSFETs, the return current will be biased to the body diodes of some SiC-MOSFETs and the amount of current will increase, resulting in energization. There is a problem that deterioration is caused and the on-resistance of the SiC-MOSFET is increased.
  • the present disclosure has focused on the above-mentioned problems, and in a semiconductor device, suppresses an increase in the amount of current due to a biased return current to the body diode of some switching elements, and switching due to deterioration of energization.
  • the purpose is to suppress an increase in the on-resistance of the device.
  • the semiconductor device is from a wide band gap semiconductor, which is connected to a first metal member, a first DC terminal connected to the first metal member, and a first metal member via a joining member.
  • a second plurality of switching elements connected to the second metal member via a joining member and formed from a wideband gap semiconductor, and a second plurality of switching elements connected to the second metal member via the joining member.
  • a second freewheeling diode connected in antiparallel to the switching element, and connected to the second plurality of switching elements and the second freewheeling diode via a bonding member, and a second metal in the second plurality of switching elements.
  • a second DC terminal having a protrusion protruding from the second metal member in a plan view viewed from a direction perpendicular to the surface to be joined to the member, and a conduction path from the first DC terminal to the first freewheeling diode.
  • the inductance is smaller than the inductance of the conduction path from the first DC terminal to the first plurality of switching elements, and the inductance of the conduction path from the protrusion to the second freewheeling diode is the inductance of the second plurality of switching from the protrusion. It has a feature smaller than the inductance of the conduction path to the element.
  • the inductance of the conduction path from the first DC terminal to the first freewheeling diode is smaller than the inductance of the conduction path from the first DC terminal to the first plurality of switching elements.
  • FIG. It is an equivalent circuit diagram of the semiconductor device 100 which concerns on Embodiment 1.
  • FIG. It is sectional drawing of the semiconductor device 100 which concerns on Embodiment 1.
  • FIG. It is a top view which shows typically the mounting state of the switching element and the like of the semiconductor element 100 in Embodiment 1.
  • FIG. It is sectional drawing which shows typically the mounting state of the switching element and the like of the semiconductor element 100 in Embodiment 1.
  • FIG. It is a top view which shows typically the arrangement of the switching element and the like of the semiconductor element 100 in Embodiment 1.
  • FIG. It is a recirculation current simulation result of the semiconductor element 100 in Embodiment 1.
  • It is a top view which shows typically the mounting state of the semiconductor device 200 which is a comparative example.
  • FIG. 200 It is a recirculation current simulation result of the semiconductor element 200 which is a comparative example. It is a top view which shows typically the mounting state of the switching element and the like of the semiconductor element 300 in the modification of Embodiment 1. It is a top view which shows typically the arrangement of the switching element and the like of the semiconductor element 300 in the modification of Embodiment 1. It is a top view which shows typically the arrangement of the switching element and the like of the semiconductor element 400 in Embodiment 2. It is sectional drawing which shows typically the arrangement of the switching element and the like of the semiconductor element 400 in Embodiment 2. It is a top view which shows typically the arrangement of the switching element and the like of the semiconductor element in Embodiment 3. FIG. It is sectional drawing of the switching element in the line segment XIV-XIV of FIG. It is a block diagram which shows the structure of the power conversion system which concerns on Embodiment 4. FIG.
  • FIG. 1 is an equivalent circuit diagram showing a semiconductor device 100 according to the first embodiment.
  • the semiconductor device 100 is configured by connecting four switching elements 101a, which are the first plurality of switching elements connected in parallel, and two freewheeling diodes 102a, which are the first freewheeling diodes connected in parallel, in antiparallel.
  • the upper arm 100a, the four switching elements 101b which are the second plurality of switching elements connected in parallel, and the two freewheeling diodes 102b which are the second freewheeling diodes connected in parallel are connected in antiparallel.
  • the lower arm 100b is formed, and the upper arm 100a and the lower arm 100b are connected in series.
  • the switching element 101 (101a and 102b) is a MOSFET formed from a wide bandgap semiconductor
  • the freewheeling diode 102 (102a and 102b) is an SBD formed from a widebandgap semiconductor.
  • 103 indicates a positive electrode terminal
  • 104 indicates a negative electrode terminal
  • 105 indicates an AC terminal
  • 106a and 106b indicate a gate terminal of the switching element 101.
  • the number of switching elements 101 and the number of freewheeling diodes 2 are not limited to the above description.
  • the 2in1 structure in which the upper arm 100a and the lower arm 100b shown in FIG. 1 are one module is excellent not only from the viewpoint of electrical characteristics but also from the viewpoint of productivity in manufacturing devices such as inverters and converters.
  • an inverter it may be used as a 6in1 structure in which three 2in1 structures are used as one module.
  • it is effective to arrange a plurality of switching elements mounted on one arm. Further, it is effective to increase the area of the freewheeling diode as the amount of current of the semiconductor device 100 increases.
  • the semiconductor device 100 according to the first embodiment is not limited to the above-mentioned use and configuration.
  • SiC Silicon carbide
  • GaN gallium nitride
  • SBDs used in the semiconductor device 100.
  • SiC-MOSFET gallium nitride
  • the basal plane dislocations introduced during crystal growth grow into stacking defects, which may cause deterioration of characteristics such as an increase in the on-resistance of the SiC-MOSFET.
  • SiC tends to generate defects in the crystal growth process, and it is known that GaN also has a similar problem.
  • MOSFETs with body diodes made of GaN and it is expected that MOSFETs formed from GaN will face similar problems in the future.
  • FIG. 2 is a schematic cross-sectional view of the upper arm 100a in the semiconductor device 100 resin-sealed by the transfer molding method.
  • the four switching elements 101a which are the first plurality of switching elements, and the two freewheeling diodes 102a, which are the first freewheeling diodes, are joined to the metal member 108a, which is the first metal member, provided on the insulating member 107. It is connected using 109. Further, the intermediate terminal 110 is connected to the switching element 101a and the freewheeling diode 102a by using the bonding member 109.
  • the heat spreader 111 in which the four switching elements 101a and the two freewheeling diodes 102a are provided on the tip of the positive electrode terminal 103, which is the first DC terminal, and on the surface of the insulating member 107 opposite to the metal member 108a. It is coated with a mold resin 112 so as to partially expose it.
  • the insulating member 107 is, for example, an insulating substrate or an insulating sheet made of resin or ceramic.
  • the joining member 109 is, for example, solder, a sintered paste made of silver, or the like.
  • the semiconductor device 100 of the first embodiment is not limited to the above configuration.
  • FIG. 3 is a plan view schematically showing a mounting state of the switching element 101, the freewheeling diode 102, and the like in the semiconductor device 100.
  • FIG. 4 is a schematic cross-sectional view taken along the broken lines A1-A2 of FIG.
  • the upper arm 100a four switching elements 101a and two freewheeling diodes 102a are connected on the metal member 108a.
  • the lower arm 100b four switching elements 101b, which are the second plurality of switching elements, and two freewheeling diodes 102b, which are the second freewheeling diodes, are connected on the metal member 108b, which is the second metal member.
  • the metal member 108a and the metal member 108b are arranged close to each other as a pair. Further, each of the switching element 101 and the freewheeling diode 102 has an upper surface electrode and a lower surface electrode (not shown), and each lower surface electrode and the metal member 108 (108a and 108b) are connected by using the bonding member 9. Will be done.
  • the metal member 108 is a metal plate made of copper, aluminum, or the like, a metal wiring formed on an insulating substrate, or the like. When using the metal wiring formed on the insulating substrate, a structure that does not require the heat spreader 111 and the insulating member 107 can be considered.
  • the positive electrode terminal 103 is connected to the metal member 108a by using the joining member 109.
  • the negative electrode terminal 104 which is the second DC terminal, is connected to the four switching elements 102b and the two freewheeling diodes 102b by using the joining member 109.
  • the AC terminal 105 is connected to the metal member 108b by using the connecting member 109.
  • the intermediate terminal 110 is connected to the metal member 108b of the lower arm 100b by using the joining member 109, so that the upper arm 100a and the lower arm 100b are connected.
  • the positive electrode terminal 103, the negative electrode terminal 104, the AC terminal 105, and the intermediate terminal 110 are formed of a plate-shaped metal.
  • the gate terminals 106a and 106b connected to the gate electrode of the switching element 101 are not shown in FIG.
  • the positive electrode terminal 103 is viewed in a plan view (in four switching elements 101b, which are the second plurality of switching elements, viewed from a direction perpendicular to the surface to be joined to the metal member 108b, which is the second metal member, FIG.
  • the negative electrode terminal 104 has a protruding portion 113 projecting outward from the metal member 108b in a plan view. ing.
  • the protruding portion 113 is also a plate-shaped metal.
  • the positive electrode terminal 103 and the projecting portion 113 are arranged so as to project from the metal member 108a and the metal member 108b in the same direction of each of the upper arm 100a and the lower arm 100b in a plan view.
  • the positive electrode terminal 103 and the protruding portion 113 are arranged closer to each other and in parallel.
  • the AC terminal 105 is arranged so as to protrude from the metal member 108b in the direction opposite to the direction in which the protruding portion 113 protrudes from the lower arm 101b.
  • the four switching elements 101a and the two freewheeling diodes 102a are arranged together and separately, and the freewheeling diode 102a is further arranged. It is arranged closer to the positive electrode terminal 103 than the switching element 101a.
  • the distance of the conduction path from the positive electrode terminal 103 as the first DC terminal to the recirculation diode 102a as the first freewheeling diode is from the positive electrode terminal 103 to the switching element 101a as the first switching element. Shorter than the distance of the conduction path of.
  • the inductance of the conductive path from the positive electrode terminal 103 to the freewheeling diode 102a can be made smaller than the inductance of the conductive path from the positive electrode terminal 103 to the switching element 101a.
  • the inductance of the conduction path from the positive electrode terminal 103 as the first DC terminal to the recirculation diode 102a as the first freewheeling diode is all switching elements from the positive electrode terminal 103 as all the first plurality of switching elements. It is smaller than the inductance of the conduction path up to 101a.
  • the four switching elements 101b and the two freewheeling diodes 102b are arranged together and separately, and the freewheeling diodes 102b are further arranged on the protruding portion 113 side of the switching element 101b. doing.
  • the distance of the conduction path from the protrusion 113 to the recirculation diode 102b as the second freewheeling diode is shorter than the distance of the conduction path from the protrusion 113 to the switching element 101b as the second switching element. ..
  • the inductance of the conductive path from the protruding portion 113 to the freewheeling diode 102b can be made smaller than the inductance of the conductive path from the protruding portion 113 to the switching element 101b.
  • the inductance of the conduction path from the protrusion 113 to the recirculation diode 102b as the second freewheeling diode is the inductance of the conduction path from the protrusion 113 to all the switching elements 101b as all the second plurality of switching elements. Smaller than
  • the plurality of switching elements 101a provided in a row on the metal member 108a as the first metal member are provided in a row on the metal member 108b as the second metal member. It is in a position facing the element 101b.
  • the freewheeling diode 102a provided on the metal member 108a in the same row as the plurality of switching elements 101a is located at a position facing the freewheeling diode 102b provided on the metal member 108b in the same row as the plurality of switching elements 101b.
  • the length and width of the intermediate terminal 110 and the slits are provided in the intermediate terminal 110 so that the difference between the inductances from the positive electrode terminal 103 to each of the four switching elements 101a is small. Etc. are being adjusted.
  • the negative electrode terminal 104 also has slits in the length and width of the negative electrode terminal 104 and in the negative electrode terminal 104 so that the difference between the inductances from the protruding portion 113 of the negative electrode terminal 104 to each of the four switching elements 102b becomes small. Adjustments such as provision are being made.
  • the intermediate terminal 110 formed of the plate-shaped metal is arranged so as to extend in the arrangement direction of the four switching elements 101a in a plan view, and is connected to the upper surface electrode of each of the four switching elements 101a by using the joining member 109. It has a portion 114a, four extending portions 115a extending from the trunk portion 114a toward the metal member 108b side of the lower arm 100b, and a joining portion 116a connected to the metal member 108b by using the joining member 109.
  • the stretched portion 115a stretches from the vicinity of the connection region between the four switching elements 101a and the trunk portion 114a toward the metal member 108b side of the lower arm 100b, and the stretched portion 115a has a conduction path from the positive electrode terminal 103. As the length increases, the width d of the stretched portion 115a becomes thicker.
  • the negative electrode terminal 104 formed of the metal on the plate extends from the trunk portion 114b toward the four switching elements 101b and the trunk portion 114b formed so as to extend in the arrangement direction of the four switching elements 101b in a plan view. It has one extending portion 115b and a joining portion 116b connected to each of the four switching elements 101b by using a joining member 109.
  • the stretched portion 115b is formed so that the width d of the stretched portion 115b becomes thicker as the conduction path from the protruding portion 113 becomes longer.
  • the width d of each of the extending portions 115a of the intermediate terminal 110 is increased as the conduction path from the positive electrode terminal 103 to each of the four switching elements 101a becomes longer, so that the positive electrode terminal is made thicker.
  • the difference between the inductances of 103 and each of the four switching elements 101a can be reduced.
  • the width d of each of the stretched portions 115b of the negative electrode terminal 104 is increased in accordance with the lengthening of the conduction path from the protruding portion 113 to each of the four switching elements 101b, thereby forming the protruding portion 113.
  • the difference between the inductances up to each of the four switching elements 101b can be reduced.
  • the difference between the inductance from the positive electrode terminal 103 to the switching element 101a having the longest conduction path and the inductance from the positive electrode terminal 103 to the switching element 101a having the shortest conduction path is preferably within 10% of the inductance of the entire semiconductor device 100.
  • the difference between the inductance to the switching element 101b having the longest conduction path from the protruding portion 113 and the inductance to the switching element 101b having the shortest conduction path from the protruding portion 113 is , It is preferable that the inductance is within 10% of the total inductance of the semiconductor device 100.
  • the positive electrode of the DC power supply is connected to the positive electrode terminal 103 of the semiconductor device 100, and the negative electrode of the DC power supply is connected to the protruding portion 113 of the negative electrode terminal 104.
  • the DC power supply may be one in which the AC voltage of the AC power supply is rectified and converted into a DC voltage.
  • the positive electrode terminal 103 and the protruding portion 113 may be connected to a capacitive element connected in parallel to the DC power supply.
  • a transient return current flows through the semiconductor device 100 due to the inductance of the circuit or load connected to the semiconductor device 100 or the semiconductor device 100.
  • the return current flows through the return diode 102 and the body diode of the switching element 101 as a current path.
  • the freewheeling diode 102 has a rated current larger than that of the body diode of the switching element 101, and Vf is set so that the current starts to flow at a lower voltage than the body diode of the switching element 101.
  • the inductance from the protruding portion 113 of the positive electrode terminal 103 and the negative electrode terminal 104 to the freewheeling diode 102 is smaller than that of the switching element 101.
  • the freewheeling current can be passed through the freewheeling diode 102 preferentially over the body diode of the switching element 101. As a result, it is possible to prevent the return current from being biased toward the body diode of some switching elements 101 and increasing the amount of current.
  • each of the upper arm 100a and the lower arm 100b the difference between the inductances from the positive electrode terminal 103 to each of the four switching elements 101a is reduced, and the inductances from the protruding portion 113 of the negative electrode terminal 104 to each of the four switching elements 102b are reduced.
  • the difference between the two it is possible to further suppress the increase in the amount of current due to the recirculation current being biased toward the body diode of some switching elements 101.
  • the four switching elements 101a provided on the metal member 108a of the upper arm 100a are arranged at positions facing each other with respect to the four switching elements 101b provided on the metal member 108b of the lower arm 100b. .. Further, the two freewheeling diodes 102a provided on the metal member 108a of the upper arm 100a are arranged so as to face each other with respect to the two freewheeling diodes 102b provided on the metal member 108b of the lower arm 100b. As a result, the difference in inductance between the upper arm 100a and the lower arm 100b can be reduced, and it is possible to prevent the return current from being biased toward the body diode of some switching elements 101 and increasing the amount of current.
  • the four switching elements 101a and the two freewheeling diodes 102a of the upper arm 100a are arranged symmetrically with the four switching elements 101b and the two freewheeling diodes 102b of the lower arm 100b. Further, the four switching elements 101a of the upper arm 100a and the two freewheeling diodes 102a are arranged so as to be mirror-symmetrical with respect to the four switching elements 101b of the lower arm 100b, the two freewheeling diodes 102b, and the broken line S1-S2. Then it is even better.
  • FIG. 6 shows a simulation result of the reflux current flowing through the body diodes of the four switching elements 101b in the lower arm 100b of the semiconductor device 100 of the first embodiment.
  • the variation of the reflux current flowing through each body diode is about 10% or less in MAX-MIN.
  • FIG. 7 is a plan view schematically showing a semiconductor device 200 which is a comparative example of the semiconductor device 100 of the first embodiment.
  • the positive electrode terminal 203 is connected to the metal member 208a by using the joining member 209.
  • the negative electrode terminal 204 which is the second DC terminal, is connected to the four switching elements 202b, the two freewheeling diodes 202b, and the joining member 209.
  • the AC terminal 205 is connected to the metal member 208b with the joining member 209.
  • the intermediate terminal 210 to the metal member 208b of the lower arm 200b and the joining member 209, the upper arm 200a and the lower arm 200b are connected.
  • the positive electrode terminal 203, the negative electrode terminal 204, the AC terminal 205, and the intermediate terminal 210 are formed of a plate-shaped metal.
  • the positive electrode terminal 203 is provided so as to project from the metal member 208a in a plan view
  • the negative electrode terminal 204 has a projecting portion 213 projecting outward from the metal member 208b in a plan view.
  • the positive electrode terminal 203 and the projecting portion 213 are arranged so as to project from the metal member 208a and the metal member 208b in the same direction of each of the upper arm 200a and the lower arm 200b in a plan view.
  • the AC terminal 205 is arranged so as to protrude from the metal member 208b in the direction opposite to the direction in which the protruding portion 213 protrudes from the lower arm 200b.
  • the intermediate terminal 210 is arranged so as to extend in the arrangement direction of the four switching elements 201a and the two freewheeling diodes 202a in a plan view, and is connected to the top electrode of each of the four switching elements 201a and the two freewheeling diodes 202a.
  • the 214a, the four extension portions 215a extending from the vicinity of the region where the trunk portion 214a is connected to the four switching elements 201a toward the metal member 208b side of the lower arm 200b, and the joint portion 216a connected to the metal member 208b.
  • the negative electrode terminal 204 extends from the trunk portion 214b toward the four switching elements 201b and the trunk portion 214b formed so as to extend in the arrangement direction of each of the four switching elements 201b and the two freewheeling diodes 202b in a plan view. It has one stretched portion 215b and a junction 216b connected to the top electrode of each of the four switching elements 201b.
  • each of the two freewheeling diodes 202a is arranged between the four switching elements 201a in the upper arm 200a.
  • two freewheeling diodes 202b are arranged between the four switching elements 201b.
  • a negative electrode provided so that the width d of each of the four stretched portions 215b extending from the trunk portion 214b of the lower arm 200b toward the four switching elements 201b protrudes from the metal member 208b in a plan view. It is the same regardless of the length of the conduction path from the protrusion 213 of the terminal 204.
  • FIG. 8 shows the simulation results of the reflux current flowing through the body diodes of the four switching elements 201b in the lower arm 200b of the semiconductor device 200.
  • the variation of the recirculation current flowing through each body diode is 100% or more in MAX-MIN, and it can be seen that the amount of current increases due to the recirculation current being biased to some switching elements. From these results, it can be seen that the semiconductor device 100 of the first embodiment can suppress the recirculation current from being biased to a part of the switching elements 101.
  • the inductance of the conductive path from the positive electrode terminal 103 to the freewheeling diode 102a is smaller than the inductance of the conductive path from the positive electrode terminal 103 to the switching element 101a.
  • the inductance of the conductive path from the protruding portion 113 of the negative electrode terminal 104 to the freewheeling diode 102b is made smaller than the inductance of the conductive path from the protruding portion 113 to the switching element 102b, so that each of the switching elements 101 It is possible to suppress an increase in the amount of current due to the recirculation current flowing through the body diode of the above being biased toward a part of the switching elements 101.
  • the width d of each of the extending portions 115a of the intermediate terminal 110 is increased as the conduction path from the positive electrode terminal 103 to each of the four switching elements 101a becomes longer, thereby forming the positive electrode terminal 103.
  • the difference between the inductances up to each of the four switching elements 101a can be reduced.
  • the width d of each of the stretched portions 115b of the negative electrode terminal 104 is increased in accordance with the lengthening of the conduction path from the protruding portion 113 to each of the four switching elements 101b, thereby forming the protruding portion 113.
  • the difference between the inductances up to each of the switching elements 101b can be reduced. As a result, it is possible to suppress the bias of the return current to a part of the switching elements 101b.
  • the four switching elements 101a provided on the metal member 108a of the upper arm 100a are arranged at positions facing each other with respect to the four switching elements 101b provided on the metal member 108b of the lower arm 100b.
  • the two freewheeling diodes 102a provided on the metal member 108a of the upper arm 100a are arranged so as to face each other with respect to the two freewheeling diodes 102b provided on the metal member 108b of the lower arm 100b.
  • the positive electrode terminal 103, the negative electrode terminal 104, the AC terminal 105, and the intermediate terminal 110 are formed of a plate-shaped metal.
  • the negative electrode terminal 104 and the intermediate terminal 110 have been described as an example of connecting to a switching element 101a, a switching element 101b, a freewheeling diode 102a, a freewheeling diode 102b, etc. via, for example, a joining member 109. Other methods may be adopted.
  • the negative electrode terminal 104 and the intermediate terminal 110 may be connected to a switching element 101a, a switching element 101b, a freewheeling diode 102a, a freewheeling diode 102b, or the like by a wire bond using an aluminum wire.
  • the positive electrode terminal 103 and the AC terminal 105 may be connected to the metal member 108a and the metal member 108b by a wire bond using an aluminum wire.
  • FIG. 9 is a plan view schematically showing a mounting state of the switching elements 301 (301a and 301b) and the freewheeling diodes 302 (302a and 302b) of the semiconductor device 300 in the modified example of the first embodiment.
  • FIG. 10 is a plan view schematically showing the arrangement of the switching element 301 and the freewheeling diode 302 of the semiconductor device 300 in the modified example of the first embodiment.
  • the main difference between the modified example of the first embodiment and the first embodiment is the shape of the metal members 308 (308a and 308b). Further, the arrangement of the switching element 301, the freewheeling diode 302, the positive electrode terminal 303, and the AC terminal 305 and the shapes of the negative electrode terminal 304 and the intermediate terminal 310 are different accordingly.
  • the metal member 308a which is the first metal member of the upper arm 300a
  • the metal member 308b which is the second metal member of the lower arm 300b
  • the projecting portions 313 of the positive electrode terminal 303 and the negative electrode terminal 304 are arranged so as to project in the same direction from the metal member 308a and the metal member 308b in a plan view.
  • the two freewheeling diodes 302a which are the first freewheeling diodes of the upper arm 300a, are collectively arranged in the vicinity of the positive electrode terminal 303 in the metal member 308a.
  • the two freewheeling diodes 302b which are the second freewheeling diodes of the lower arm 300b, are collectively arranged in the vicinity of the protrusion 313 in the metal member 308b. Further, the two freewheeling diodes 302a are located opposite the two freewheeling diodes 302b.
  • the four switching elements 301a which are the first plurality of switching elements of the upper arm 300a, are metal members so as to surround the two freewheeling diodes 302a at a position farther than the two freewheeling diodes 302a with respect to the positive electrode terminal 303. It is arranged at 308a.
  • the four switching elements 301b which are the second plurality of switching elements of the lower arm 100b, surround the two freewheeling diodes 302b at a position farther than the two freewheeling diodes 302b with respect to the protrusion 313, so that the metal member 308b is surrounded by the two freewheeling diodes 302b. It is arranged in.
  • each of the upper arm 300a and the lower arm 300b four switching elements 301 are arranged around the freewheeling diode 302.
  • the difference between the distances from the positive electrode terminal 303 to each of the four switching elements 301a is small
  • the difference between the distances from the protrusion 313 to each of the four switching elements 301b is small. .. Therefore, in the upper arm 300a, the difference between the inductances of the conduction paths from the positive electrode terminal 303 to each of the four switching elements 301a is small, and in the lower arm 300b, between the inductances of the conduction paths from the protrusion 313 to each of the four switching elements 301b. The difference is small.
  • the four switching elements 301a and the two freewheeling diodes 302a of the upper arm 300a are arranged so as to be symmetrical with the four switching elements 301b and the two freewheeling diodes 302b of the lower arm 300b. It is good to do. Further, the four switching elements 301a and the two freewheeling diodes 302a of the upper arm 300a are arranged so as to be mirror-symmetrical with respect to the broken line S3-S4 with the four switching elements 301b and the two freewheeling diodes 302b of the lower arm 300b. It is even better to set it up.
  • the difference between the inductances of the conduction paths from the positive electrode terminal 303 to each of the four switching elements 301a is reduced in the upper arm 300a, and the four switching from the protruding portion 313 to the lower arm 300b.
  • the width and length of the negative electrode terminal 304 and the intermediate terminal 310 may be changed, or a slit may be provided.
  • the degree of freedom of shape of the aspect ratio of the semiconductor device 300 is higher than that of the first embodiment. Can be high.
  • FIG. 11 is a plan view schematically showing a mounting state of the switching elements 401 (401a and 401b) and the freewheeling diodes 402 (402a and 402b) in the semiconductor device 400 of the second embodiment.
  • FIG. 12 is a schematic cross-sectional view taken along the broken line A3-A4 of FIG.
  • the main difference between the second embodiment and the first embodiment is that the intermediate terminal 410 overlaps the negative electrode terminal 404 in a plan view at least in the arrangement region of the switching element 401a.
  • the negative electrode terminal 404 as the second DC terminal is a portion arranged on the switching element 401a as the first plurality of switching elements in the intermediate terminal 410 and the intermediate terminal in a plan view. It overlaps the portion disposed on the recirculation diode 402a as the first recirculation diode in 404.
  • the current flowing through the negative electrode terminal 404 and the intermediate terminal 410 flows in a direction in which the magnetic fields created by the currents flowing through the negative electrode terminal 404 and the intermediate terminal 410 cancel each other out. Therefore, the inductance can be reduced in the region where the intermediate terminal 410 and the negative electrode terminal 404 overlap. As a result, the inductance of the semiconductor device 400 can be reduced, and the return current can be reduced.
  • the inductance of the negative electrode terminal 404 and the intermediate terminal 410 in the arrangement region of the switching element 401 can be reduced, the inductance of the positive electrode terminal 403 and the four switching elements 401a which are the first switching elements can be reduced in the upper arm 400a. At the same time, the difference between the inductances from the positive electrode terminal 403 to each of the four switching elements 401a can be reduced.
  • the inductance of the protruding portion 413 of the negative electrode terminal 404 and the four switching elements 401b, which are the second switching elements, can be reduced, and the inductance from the protruding portion 413 to each of the four switching elements 401b can be reduced. The difference between them can be reduced.
  • the four switching elements from the positive electrode terminal 403 to the first four elements can be combined. It is possible to further reduce the difference between the inductances up to each, and further reduce the difference between the inductances from the protrusion 413 to each of the second four switching elements 401b.
  • the four switching elements 401a provided on the metal member 408a of the upper arm 400a are located at positions facing each other with respect to the four switching elements 401b provided on the metal member 408b of the lower arm 400b.
  • the two freewheeling diodes 402a provided on the metal member 408a of the upper arm 400a are arranged so as to face each other with respect to the two freewheeling diodes 402b provided on the metal member 408b of the lower arm 400b.
  • the four switching elements 401a and the two freewheeling diodes 402a of the upper arm 400a are arranged symmetrically with the four switching elements 401b and the four freewheeling diodes 402b of the lower arm 400b.
  • the four switching elements 401a and the two freewheeling diodes 402a of the upper arm 400a are arranged so as to be mirror-symmetrical with the four switching elements 401a and the two freewheeling diodes 402b of the lower arm 400b. It is even better to set it up.
  • the inductance can be reduced by overlapping the negative electrode terminal 404 with the intermediate terminal 410 in the arrangement region of at least four switching elements 401, and the surge voltage generated when the switching element 401 is turned on and off can be reduced.
  • a switching element 401 having a lower withstand voltage can be used.
  • FIG. 13 shows a plan view schematically showing the arrangement of the switching elements in the third embodiment.
  • the pattern of the switching element is not formed in a part of the region of the switching element described in the first and second embodiments, and the freewheeling diode is formed in the region where the pattern of the switching element is not formed. In this way, it is possible to incorporate a freewheeling diode in the switching element. However, if a freewheeling diode is built in the switching element, the plane size of the switching element becomes large.
  • the switching elements 501a and 501b with built-in diodes having a freewheeling diode built in some of the switching elements are used, and the remaining switching elements are the same as those used in the first and second embodiments. It is conceivable to use switching elements 401a, 401b (that is, switching elements having the same configuration as the switching elements 101a, 101b, 201a, 201b, 301a, 301b).
  • the switching element 401a and the diode built-in switching element 501a are fixed on the metal member 508a, which is the first metal member provided on the insulating member 507, by using a joining member.
  • the two switching elements 401a and the two diode-embedded switching elements 501a are arranged so as to be aligned with each other.
  • the switching element 401b and the diode built-in switching element 501b are fixed on the metal member 508b, which is the second metal member provided on the insulating member 507, by using a joining member.
  • the two switching elements 401b and the two diode-embedded switching elements 501b are arranged so as to be aligned with each other.
  • the recirculation diode portion 501ab is arranged in the central portion of the element, and the switching element portion 501aa is arranged so as to surround the recirculation diode 501ab in the outer peripheral portion of the element. ing.
  • the diode built-in switching 501b has the same configuration as the diode built-in switching element 501a.
  • the switching element 401b is arranged at a position facing the switching element 401a.
  • the diode built-in switching element 501b is arranged at a position facing the diode built-in switching element 501a.
  • Other configurations such as the negative electrode terminal 104, the protruding portion 113, and the AC terminal 105 (not shown in FIGS. 13 and 14) can be the same as the configurations in the semiconductor device 100 shown in FIGS. 1 to 3, for example. That is, in the upper arm including the metal member 508a, the intermediate terminal 110 (see FIG. 3) is connected to the two switching elements 402a and the two diode built-in switching elements 501a. In the lower arm, the negative electrode terminal 104 (see FIG.
  • the second DC terminal which is the second DC terminal, uses two switching elements 402b and two diode-embedded switching elements 501b and a joining member as in the semiconductor device 100 shown in FIG. Be connected.
  • the AC terminal 105 (see FIG. 3) is connected to the metal member 508b by using a connecting member in the same manner as the semiconductor device 100 shown in FIG.
  • the intermediate terminal 110 (see FIG. 3) is connected to the metal member 508b of the lower arm by using a joining member, so that the upper arm and the lower arm are connected.
  • the diode built-in switching element 501a is arranged so as to face the diode built-in switching element 501b, and the inductance of the conductive path from the positive electrode terminal 103 (see FIG. 3) connected to the metal member 508a to the diode built-in switching element 501a. Is arranged so as to be smaller than the inductance of the conduction path from the positive electrode terminal 103 (see FIG. 3) to the switching element 401a.
  • the inductance of the conductive path from the protruding portion 113 (see FIG. 3) to the diode built-in switching element 501b is calculated from the inductance of the conductive path from the protruding portion 113 to the switching element 401b. Arrange so that it is also small.
  • the inductance to the above is the same as or smaller than the inductance from the protruding portion 113 of the positive electrode terminal 103 and the negative electrode terminal 104 to the switching element portion 501aa or the switching element 401 of the diode built-in switching element 501.
  • the recirculation current can flow to the recirculation diode 501ab of the diode built-in switching elements 501a and 501b with priority over the switching element section 501aa of the diode built-in switching elements 501a and 501b and the body diode of the switching element 401.
  • the characteristics of the freewheeling diode section 501ab built into the switching elements 501a and 501b with built-in diodes are that the voltage when the freewheeling diode current starts to flow is Vfr and the voltage when the current starts to flow to the body diode of each switching element is Vd. , Vfr ⁇ Vd (voltage Vfr is smaller than voltage Vd).
  • the semiconductor device includes a metal member 508a as a first metal member and a positive electrode terminal 103 as a first DC terminal (see FIG. 3).
  • the positive electrode terminal 103 is connected to the metal member 508a.
  • the first plurality of switching elements 401a are connected to the metal member 508a via a bonding member, and are formed of a wide bandgap semiconductor.
  • the first diode built-in switching element 501a has a switching element unit 501aa as a second switching element and a recirculation diode unit 501ab as a first recirculation diode.
  • the switching element portion 501aa is formed of a wide bandgap semiconductor.
  • the recirculation diode section 501ab is connected to the switching element section 501aa in antiparallel.
  • the first diode-embedded switching element 501a is connected to the metal member 508a via a bonding member.
  • the intermediate terminal 110 is connected to the first plurality of switching elements 401a and the first diode built-in switching element 501a via a bonding member.
  • An intermediate terminal 110 is connected to the metal member 508b as the second metal member, and the metal member 508b is arranged adjacent to the metal member 508a.
  • the third plurality of switching elements 401b are connected to the metal member 508b via a joining member, and are formed of a wide bandgap semiconductor.
  • the second diode built-in switching element 501b has a switching element portion as a fourth switching element and a recirculation diode portion as a second recirculation diode.
  • the switching element in the second diode built-in switching element 501b is formed of a wide bandgap semiconductor.
  • the recirculation diode portion is connected to the switching element portion in antiparallel.
  • the second diode-embedded switching element 501b is connected to the metal member 508b via a bonding member.
  • the negative electrode terminal 104 is connected to a plurality of third switching elements 401b and a second diode built-in switching element 501b via a bonding member.
  • the negative electrode terminal 104 has a protruding portion 113 (see FIG. 3) protruding from the metal member 508b in a plan view viewed from a direction perpendicular to the surface of the third plurality of switching elements 401b to be joined to the metal member 508b.
  • the inductance of the conduction path from the positive electrode terminal 103 to the first diode built-in switching element 501a is smaller than the inductance of the conduction path from the positive electrode terminal 103 to all the first plurality of switching elements 401b.
  • the inductance of the conduction path from the protrusion 113 to the second diode built-in switching element 501b is smaller than the inductance of the conduction path from the protrusion 113 to all the third plurality of switching elements 401b.
  • the first plurality of switching elements 401a and the third switching element 401b are formed of silicon carbide, which is a wide bandgap semiconductor.
  • Embodiment 4 the semiconductor devices according to the first embodiment, the modified examples of the first embodiment, the second embodiment and the third embodiment described above are applied to the power conversion device.
  • the present disclosure is not limited to a specific power conversion device, the case where the present disclosure is applied to a three-phase inverter will be described below as a fourth embodiment.
  • FIG. 15 is a block diagram showing a configuration of a power conversion system to which the power conversion device according to the fourth embodiment is applied.
  • the power conversion system shown in FIG. 15 includes a power supply 500, a power conversion device 600, and a load 700.
  • the power supply 500 is a DC power supply, and supplies DC power to the power converter 600.
  • the power supply 500 can be configured with various things, for example, it can be configured with a DC system, a solar cell, a storage battery, or it can be configured with a rectifier circuit or an AC / DC converter connected to an AC system. May be good.
  • the power supply 500 may be configured by a DC / DC converter that converts the DC power output from the DC system into a predetermined power.
  • the power conversion device 600 is a three-phase inverter connected between the power supply 500 and the load 700, converts the DC power supplied from the power supply 500 into AC power, and supplies the AC power to the load 700. As shown in FIG. 15, the power conversion device 600 has a main conversion circuit 601 that converts DC power into AC power and outputs it, and a control circuit 603 that outputs a control signal for controlling the main conversion circuit 601 to the main conversion circuit 601. And have.
  • the load 700 is a three-phase electric motor driven by AC power supplied from the power converter 600.
  • the load 700 is not limited to a specific application, and is an electric motor mounted on various electric devices.
  • the load 700 is used as an electric motor for a hybrid vehicle, an electric vehicle, a railroad vehicle, an elevator, or an air conditioner.
  • the main conversion circuit 601 includes a switching element and a freewheeling diode (not shown), and when the switching element switches, the DC power supplied from the power supply 500 is converted into AC power and supplied to the load 700.
  • the main conversion circuit 601 according to the fourth embodiment is a two-level three-phase full bridge circuit, and has six switching elements and each switching element. It can consist of six anti-parallel freewheeling diodes.
  • At least one of each switching element and each freewheeling diode of the main conversion circuit 601 is a semiconductor device 602 corresponding to any of the semiconductor devices of the above-described first embodiment, the modified example of the first embodiment and the second embodiment.
  • each switching element is connected in series for each of the two switching elements to form an upper and lower arm, and each upper and lower arm constitutes each phase (U phase, V phase, W phase) of the full bridge circuit. Then, the output terminals of the upper and lower arms, that is, the three output terminals of the main conversion circuit 601 are connected to the load 700.
  • the main conversion circuit 601 includes a drive circuit (not shown) for driving each switching element
  • the drive circuit may be built in the semiconductor device 602, or a drive circuit may be provided separately from the semiconductor device 602. It may be provided.
  • the drive circuit generates a drive signal for driving the switching element of the main conversion circuit 601 and supplies the drive signal to the control electrode of the switching element of the main conversion circuit 601. Specifically, according to the control signal from the control circuit 603 described later, a drive signal for turning on the switching element and a drive signal for turning off the switching element are output to the control electrodes of each switching element.
  • the drive signal When the switching element is kept on, the drive signal is a voltage signal (on signal) equal to or higher than the threshold voltage of the switching element, and when the switching element is kept off, the drive signal is a voltage equal to or lower than the threshold voltage of the switching element. It becomes a signal (off signal).
  • the control circuit 603 controls the switching element of the main conversion circuit 601 so that the desired power is supplied to the load 700. Specifically, the time (on time) for each switching element of the main conversion circuit 601 to be in the on state is calculated based on the power to be supplied to the load 700.
  • the main conversion circuit 601 can be controlled by PWM control that modulates the on-time of the switching element according to the voltage to be output.
  • a control command is output to the drive circuit provided in the main conversion circuit 601 so that an on signal is output to the switching element that should be turned on at each time point and an off signal is output to the switching element that should be turned off. Is output.
  • the drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switching element according to this control signal.
  • the semiconductor device according to the first embodiment, the modified example of the first embodiment, the second embodiment and the third embodiment is applied as the semiconductor device 602 constituting the main conversion circuit 601. Therefore, it is possible to improve the reliability.
  • the present disclosure is not limited to this, and can be applied to various power conversion devices.
  • the two-level power conversion device is used, but a three-level or multi-level power conversion device may be used, and when power is supplied to the single-phase load, the present disclosure is provided to the single-phase inverter. You may apply it.
  • the present disclosure can be applied to a DC / DC converter or an AC / DC converter.
  • the power conversion device to which the present disclosure is applied is not limited to the case where the above-mentioned load is an electric motor, for example, a power supply device for a discharge machine, a laser machine, an induction heating cooker, or a non-contact power supply system. It can also be used as a power conditioner for a photovoltaic power generation system, a power storage system, or the like.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inverter Devices (AREA)

Abstract

L'objectif de la présente invention est de fournir un dispositif à semi-conducteur dans lequel l'augmentation de la quantité de courant électrique par un courant de retour polarisé vers des diodes de corps d'un certain nombre d'éléments de commutation est supprimée et l'augmentation de la résistance à l'état passant des éléments de commutation due à la dégradation par conduction électrique est supprimée. Dans un bras supérieur (100a) d'un dispositif à semi-conducteur (100), l'inductance d'un trajet conducteur d'une première borne CC (103) à une diode à transfert indirect (102a) est inférieure à l'inductance d'un trajet conducteur de la première borne CC (103) à une pluralité d'éléments de commutation (101b). En outre, un bras inférieur (100b) du dispositif à semi-conducteur (100) présente une caractéristique telle que l'inductance d'un trajet conducteur d'une partie de projection (113) d'une seconde borne CC (104) à une diode à transfert indirect (102b) est inférieure à l'inductance d'un trajet conducteur d'une partie de projection (113) à une pluralité d'éléments de commutation (101b).
PCT/JP2020/032178 2019-11-15 2020-08-26 Dispositif à semi-conducteur et dispositif de conversion de puissance WO2021095323A1 (fr)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011036016A (ja) * 2009-07-31 2011-02-17 Daikin Industries Ltd 電力変換装置
JP2014128066A (ja) * 2012-12-25 2014-07-07 Mitsubishi Electric Corp 半導体モジュール
JP2015106601A (ja) * 2013-11-29 2015-06-08 本田技研工業株式会社 半導体装置
JP2017017812A (ja) * 2015-06-29 2017-01-19 株式会社日立製作所 パワー半導体モジュール、及びインバータ回路
JP2018060928A (ja) * 2016-10-06 2018-04-12 株式会社日立製作所 パワーモジュールおよび電力変換装置
WO2018084020A1 (fr) * 2016-11-01 2018-05-11 三菱電機株式会社 Dispositif à semiconducteur en carbure de silicium et dispositif de conversion de puissance

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011036016A (ja) * 2009-07-31 2011-02-17 Daikin Industries Ltd 電力変換装置
JP2014128066A (ja) * 2012-12-25 2014-07-07 Mitsubishi Electric Corp 半導体モジュール
JP2015106601A (ja) * 2013-11-29 2015-06-08 本田技研工業株式会社 半導体装置
JP2017017812A (ja) * 2015-06-29 2017-01-19 株式会社日立製作所 パワー半導体モジュール、及びインバータ回路
JP2018060928A (ja) * 2016-10-06 2018-04-12 株式会社日立製作所 パワーモジュールおよび電力変換装置
WO2018084020A1 (fr) * 2016-11-01 2018-05-11 三菱電機株式会社 Dispositif à semiconducteur en carbure de silicium et dispositif de conversion de puissance

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