WO2021092757A1 - 背板、显示基板和显示装置 - Google Patents

背板、显示基板和显示装置 Download PDF

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Publication number
WO2021092757A1
WO2021092757A1 PCT/CN2019/117510 CN2019117510W WO2021092757A1 WO 2021092757 A1 WO2021092757 A1 WO 2021092757A1 CN 2019117510 W CN2019117510 W CN 2019117510W WO 2021092757 A1 WO2021092757 A1 WO 2021092757A1
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WIPO (PCT)
Prior art keywords
light
micro
transparent substrate
display
emitting device
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PCT/CN2019/117510
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English (en)
French (fr)
Inventor
李健
王子健
林家强
翟明
李沛
王志远
李金鹏
曹鹏军
张腾
Original Assignee
京东方科技集团股份有限公司
北京京东方显示技术有限公司
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Application filed by 京东方科技集团股份有限公司, 北京京东方显示技术有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US17/041,844 priority Critical patent/US20230095594A1/en
Priority to PCT/CN2019/117510 priority patent/WO2021092757A1/zh
Priority to CN201980002397.9A priority patent/CN113424249B/zh
Publication of WO2021092757A1 publication Critical patent/WO2021092757A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/88—Terminals, e.g. bond pads
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other

Definitions

  • the present disclosure relates to the field of display, in particular to a backplane, a display substrate and a display device.
  • Micro-display light-emitting devices such as Micro-LED or Mini-LED
  • the preparation process of the existing micro-light-emitting diode display substrate is too complicated, which affects its further promotion.
  • the present disclosure proposes a backplane, a display substrate and a display device.
  • the present disclosure provides a backplane, including: a transparent substrate; an electrode layer disposed on one side of the transparent substrate and including a plurality of signal transmission lines; a plurality of micro-display light emitting devices disposed on the back of the electrode layer To one side of the transparent substrate, the micro-display light-emitting device is electrically connected to the signal transmission line, and the micro-display light-emitting device can emit light toward the side of the transparent substrate; a protective layer is disposed on the micro-display light-emitting device The side facing away from the transparent substrate; the driving module is arranged on the side of the protective layer facing away from the transparent substrate, and is electrically connected to the signal transmission line.
  • an opening is formed in a region of the electrode layer facing the micro display light emitting device.
  • the backplane is divided into an effective area and an edge area surrounding the effective area; a part of the protective layer located in the edge area is formed with a via hole connected to the signal transmission line, and the over A connecting electrode is arranged in the hole, and the connecting electrode extends to the side of the protective layer facing away from the transparent substrate, and the driving module is connected to the signal transmission line through the connecting electrode.
  • a hole-filling glue is provided in the via hole and located on the side of the connection electrode away from the transparent substrate.
  • the backplane is divided into an effective area and an edge area surrounding the effective area; the part of the protective layer located in the edge area covers a side of the edge area close to the effective area,
  • the signal transmission line is located in the edge area and is not covered by the protective layer and is connected to the driving module.
  • the protective layer is located in a portion of the edge area, and the side of the protective layer facing away from the effective area of the display area is a sloped surface.
  • the electrode layer further includes a binding electrode connected to the signal transmission line, the binding electrode includes a first sub-electrode and a second sub-electrode, the micro-display light-emitting device includes a cathode and an anode, The first sub-electrode is connected to one of the cathode and the anode, and the second sub-electrode is connected to the other of the cathode and the anode.
  • the signal transmission line includes a first sub-signal line and a second sub-signal line, the first sub-signal line is connected to one of the cathode and the anode, and the second sub-signal line is connected to the The other of the cathode and anode is connected.
  • all the micro-display light-emitting devices constitute a plurality of pixels, and each pixel includes at least three micro-display light-emitting devices.
  • the pixel includes: a first micro-display light-emitting device configured to emit red light; a second micro-display light-emitting device configured to emit green light; and a third micro-display light-emitting device configured to emit blue light.
  • the pixel includes: a first micro-display light-emitting device configured to emit light of a preset color, and a first micro-display light-emitting device is formed in the opening between the first micro-display light-emitting device and the transparent substrate.
  • a second micro-display light-emitting device configured to emit light of a preset color
  • a second light conversion material is formed in the opening between the second micro-display light-emitting device and the transparent substrate
  • a third micro The display light emitting device is configured to emit light of a preset color
  • the first light conversion material is configured to convert the preset color light into a first color light
  • the second light conversion material is configured to convert the preset color light The light is converted to the second color light.
  • the preset color light is blue light
  • the first color light is red light
  • the second color light is green light
  • the first light conversion material includes red fluorescent glue; the second light conversion material includes green fluorescent glue.
  • the microdisplay light emitting device includes: MiniLED and microLED.
  • a quantum dot film layer is provided on the side of the transparent substrate facing away from the electrode layer.
  • a reflective layer is provided between the transparent substrate and the quantum dot film layer, and the side of the reflective layer facing away from the transparent substrate is a reflective surface.
  • the orthographic projection of the reflective layer of the reflective film on the transparent substrate and the orthographic projection of the micro-display light emitting device on the transparent substrate do not overlap.
  • the driving module includes: a driving chip and a flexible circuit board, the flexible circuit board includes a plurality of conductive circuits, one end of the conductive circuit is connected to the driving chip, and the other of the conductive circuit One end is electrically connected to the signal transmission line.
  • the present disclosure provides a display substrate, including: the backplane of the first aspect of the present disclosure.
  • the present disclosure provides a display device including: the display substrate of the first aspect of the present disclosure.
  • FIG. 1 is a schematic diagram of the structure of a micro light emitting diode display device in the related art
  • Fig. 2a is a front view of the back plate of the embodiment of the disclosure.
  • Figure 2b is a cross-sectional view of the back plate shown in Figure 2 along line AA in some embodiments;
  • Fig. 3 is a schematic structural diagram of the back plate shown in Fig. 2b in the first stage of preparation;
  • FIG. 4 is a schematic structural diagram of the backplane shown in FIG. 2b in the second stage of preparation
  • Figure 5 is a front view of the back plate of some embodiments of the present disclosure.
  • Figure 6 is a cross-sectional view of the back plate shown in Figure 5 along line BB;
  • Figure 7 is a cross-sectional view of the back plate of Figure 2a along line AA in some embodiments;
  • Fig. 8 is a cross-sectional view of the back plate of Fig. 2a along line AA in some embodiments.
  • the reference signs are: 1', hard substrate; 1. transparent substrate; 1A, effective area; 1B, edge area; 2. first insulating layer; 3. electrode layer; 31, first sub-signal line; 32, first Two sub signal lines; 3a, connecting electrode; 4. second insulating layer; 5a, first micro-display light-emitting device; 5b, second micro-display light-emitting device; 5c, third micro-display light-emitting device; 51, cathode; 52, Anode; 6. Protective layer; 7. Flexible circuit board; 8. Rigid circuit board; 9. Driver chip; 10. Hole filling glue; 11a, first light conversion material; 11b, second light conversion material; 12. reflection Layer; 13, quantum dot film layer; H, via.
  • the "patterning process” used in the present disclosure refers to the step of forming a structure with a specific pattern, which can be a photolithography process.
  • the photolithography process includes forming a material layer, coating photoresist, exposing, developing, etching, and photolithography.
  • One or more of the steps such as resist stripping; of course, the “patterning process” can also be other processes such as imprinting process and inkjet printing process.
  • the electrical connection of the two structures mentioned in this disclosure means that the two structures can transmit current between them.
  • the connection of two structures mentioned in this disclosure means that the two structures are in contact and can transmit current between them.
  • the micro-light-emitting diode display device consists of a hard substrate 1'(material such as glass), an electrode layer 3 arranged on the hard substrate 1', and an electrode layer 3 bound to the hard substrate.
  • a plurality of micro light emitting diodes (labeled as the first micro display light emitting device 5a, the second micro display light emitting device 5b, and the third micro display light emitting device 5c) on one side of 1', the protective glue 6 covering each micro light emitting diode, and the flexible circuit Board 7.
  • the flexible circuit board 7 may also be provided with a structure such as a driving chip (not shown).
  • the micro light emitting diode is arranged on the first side of the plane where the hard substrate 1'is located, and the flexible circuit board 7 is arranged on the second side of the plane where the hard substrate 1'is located, and the first side and the second side are opposite sides.
  • the flexible circuit board 7 In order to realize the electrical connection between the flexible circuit board 7 and each micro light-emitting diode, it is necessary to wire on the side of the hard substrate 1'. The process of side wiring is difficult, and the required equipment is more complicated and expensive.
  • the embodiment of the present disclosure provides a backplane, including: a transparent substrate 1; an electrode layer 3, arranged on one side of the transparent substrate 1, including a plurality of signal transmission lines; a plurality of micro-display light emitting devices, It is arranged on the side of the electrode layer 3 facing away from the transparent substrate 1.
  • the micro-display light-emitting device is electrically connected to the signal transmission line, and the micro-display light-emitting device can emit light toward the side of the transparent substrate 1;
  • the protective layer 6 is arranged on the back of the micro-display light-emitting device to be transparent One side of the substrate 1; the drive module is arranged on the side of the protective layer 6 facing away from the transparent substrate 1, and is electrically connected to the signal transmission line.
  • the transparent substrate 1 is, for example, a glass substrate.
  • the micro-display light-emitting device refers to a small-sized light-emitting device, such as a Micro-LED (the overall size is usually below 100 um) or a Mini-LED (the overall size is usually between 100 um and 200 um).
  • the protective layer 6 performs electrical and mechanical protection for the microdisplay light emitting device.
  • the material of the protective layer 6 is, for example, silica gel, epoxy glue, etc., which can be formed by a dispensing process or an injection molding process.
  • the driving module is composed of, for example, a driving chip 9, a hard circuit board 8, and a flexible circuit board 7.
  • the driving chip 9 is bound on the hard circuit board 8 to transmit driving signals to the hard circuit board 8; the flexible circuit board 7 It is also bound to the hard circuit board 8 to transmit the drive signal from the hard circuit board 8 to the flexible circuit board 7; and the electrical connection between the flexible circuit board 7 and the electrode layer 3, so as to transmit the drive signal from the flexible circuit board 7 To the electrode layer 3; finally the electrode layer 3 drives the micro-display light-emitting device to emit light.
  • the driving module may also include: a driving chip 9 and a flexible circuit board 7.
  • the flexible circuit board 7 includes a number of conductive circuits (not shown), one end of the conductive circuit is connected to the driving chip 9, and the conductive circuit The other end of is electrically connected to the signal transmission line (that is, electrically connected to the electrode layer 3).
  • the driving chip 9 is directly bound on the flexible circuit board 7, instead of realizing the electrical connection between the driving chip 9 and the flexible circuit board 7 via the hard circuit board 8. That is, the above-mentioned hard circuit board 8 is an optional component in the drive module.
  • the micro-display light-emitting device and the driving module are arranged on the same side of the plane where the transparent substrate 1 is located, and the structure for forming an electrical connection between the micro-display light-emitting device and the driving module is also corresponding.
  • the ground is set on the same side of the plane where the transparent substrate 1 is located, so there is no need for wiring on the side of the transparent substrate 1, so that the manufacturing process of the backplane is simple and the cost is reduced.
  • a first insulating layer 2 may also be provided between the transparent substrate 1 and the electrode layer 3, such as a polyimide (PI) layer or a transparent thermoplastic polyimide (TPI) layer.
  • PI polyimide
  • TPI transparent thermoplastic polyimide
  • the electrode layer 3 can be provided with a single-layer signal transmission line or multiple layers, as shown in Figure 2b, where two layers of signal transmission lines are provided in the electrode layer 3, and the two layers of signal transmission lines are separated by a second insulating layer 4.
  • the material of 4 is, for example, a polyimide (PI) layer or a transparent thermoplastic polyimide (TPI) layer.
  • the electrode layer 3 in the direction perpendicular to the transparent substrate 1, the electrode layer 3 is formed with an opening in the area facing the microdisplay light emitting device. Since the micro-display light emitting device emits light toward the transparent substrate 1, the opening formed in the electrode layer 3 is beneficial to increase the transmittance of the backplane.
  • the first layer of signal transmission line patterns can be formed on the first insulating layer 2 through a patterning process, and the first layer of signal transmission line material in the region corresponding to the opening to be formed is removed.
  • the pattern of the second insulating layer 4 is then formed on the signal transmission line of the first layer by a patterning process, while the material of the second insulating layer 4 in the region corresponding to the opening to be formed is retained (removed in the subsequent process), and the first to be removed There is a gap between the material of the second insulating layer 4 and the second insulating layer 4 in the final product.
  • the conductive material used to form the second layer of signal transmission line the conductive material will fill the above gap, and use the process of exposure, development, and etching to form the pattern of the second layer of signal line. At this time, the area in the area where the opening is to be formed The conductive material is removed.
  • the backplane is divided into an effective area 1A and an edge area 1B surrounding the effective area 1A; the part of the protective layer 6 located in the edge area 1B is formed with a via H connected to the signal transmission line, A connecting electrode 3a is arranged in the via hole H, and the connecting electrode 3a extends to the side of the protective layer 6 facing away from the transparent substrate 1, and the driving module is connected to the signal transmission line through the connecting electrode 3a.
  • a number of micro-display light-emitting devices are arranged in the active area 1A (Active Area, also called AA area), for example, distributed in an array; the connecting electrode 3a serves as an interface for the electrode layer 3 to communicate with the outside; the flexible circuit board 7 in the driving module The connection with the connection electrode 3a is realized on the surface of the protective layer 6 facing away from the transparent substrate 1.
  • Active Area also called AA area
  • a conductive layer is formed on the transparent substrate 1 (specifically on the first insulating layer 2).
  • sputtering, photolithography, or electroplating can be used to form the signal transmission line in the electrode layer 3, wherein, at the edge A connecting electrode 3a is formed in the region 1B; then the microdisplay light-emitting device is bound on the conductive layer; and then a protective layer 6 is formed, wherein the protective layer 6 covers the connecting electrode 3a.
  • the micro-display light-emitting device can be bound on the conductive layer by means such as welding and eutectic.
  • a via hole H is formed in the protective layer 6 to expose the connection electrode 3a; then the connection electrode 3a at the bottom of the via hole H is extended to the outside of the via hole H by a patterning process.
  • the flexible circuit board 7 and the connecting electrode 3a are bound together.
  • a hole-filling glue 10 is provided in the via hole H and on the side of the connection electrode 3a facing away from the transparent substrate 1.
  • the material of the filling glue 10 is, for example, silica gel, epoxy resin, ultraviolet curing glue, acrylic, etc., so as to protect the circuit in the via hole H.
  • the backplane is divided into an effective area 1A and an edge area 1B surrounding the effective area 1A; the part of the protective layer 6 located in the edge area 1B covers an edge area 1B close to the effective area 1A.
  • the signal transmission line is located in the edge area 1B and is not covered by the protective layer 6 and is connected to the driving module.
  • the outer part of the edge region 1B of the backplane exposes a whole area of the electrode layer 3 so as to facilitate the position where the electrode layer 3 is exposed. Connect (or bind) the flexible circuit board 7 at the locations.
  • the protective layer 6 is located at the edge area 1B, and the side of the protective layer 6 facing away from the effective area of the display area is a sloped surface.
  • the material of the entire protective layer 6 can be formed on the transparent substrate 1 first, and then a patterning process such as photolithography can be used to remove the material of the entire protective layer 6 located in the edge region 1B near its peripheral boundary, and by controlling the etching The parameters of the process realize that the protective layer 6 forms a relatively gentle slope in the middle of the edge region 1B.
  • the flexible circuit board 7 when the flexible circuit board 7 is bound, the flexible circuit board 7 will not be bent to a large extent, which is convenient to improve the yield of the product and reduce the difficulty in binding.
  • the signal transmission line includes a first sub-signal line 31 and a second sub-signal line 32, and the first sub-signal line 31 is connected to one of the cathode 51 and the anode 52, The second sub signal line 32 is connected to the other of the cathode 51 and the anode 52.
  • the micro-display light-emitting device can be bound to the signal transmission line.
  • the electrode layer 3 further includes a binding electrode (not shown) connected to the signal transmission line, the binding electrode includes a first sub-electrode and a second sub-electrode, and the micro-display light-emitting device includes a cathode 51 and an anode 52, The first sub-electrode is connected to one of the cathode 51 and the anode 52, and the second sub-electrode is connected to the other of the cathode 51 and the anode 52.
  • the micro-display light-emitting device can also be bound on the binding electrode, and the binding electrode is formed of a section of conductive material connected to the signal transmission line.
  • all the micro-display light-emitting devices constitute a plurality of pixels, and each pixel includes at least three micro-display light-emitting devices.
  • the backplane can be used as a part of the display substrate.
  • the pixel includes: a first micro-display light-emitting device 5a configured to emit red light; a second micro-display light-emitting device 5b configured to emit green light; and a third micro-display light-emitting device 5c, configured to emit blue light.
  • each micro-display light-emitting device corresponds to a sub-pixel of one color.
  • the pixel includes: a first micro-display light-emitting device 5a configured to emit light of a preset color, and a first light is formed in the opening between the first micro-display light-emitting device 5a and the transparent substrate 1.
  • the second micro-display light-emitting device 5b configured to emit light of a preset color
  • a second light conversion material 11b is formed in the opening between the second micro-display light-emitting device 5b and the transparent substrate 1
  • the third micro-display light-emitting The device 5c is configured to emit light of a preset color
  • the first light conversion material 11a is configured to convert the preset color light into a first color light
  • the second light conversion material 11b is configured to convert a preset color light into a second color light .
  • the micro-display light-emitting devices all adopt micro-display light-emitting devices that emit the same color, that is, the electrical characteristics of the micro-display light-emitting devices in the sub-pixels of different colors are the same, so that the design of the driving module of the micro-display light-emitting device can be improved. It's simpler.
  • Both the first light conversion material 11a and the second light conversion material 11b can be selected as down-conversion material luminescent materials.
  • Down-conversion materials Luminescent materials refer to materials that can emit two or more low-energy photons after absorbing the ultraviolet light of one high-energy photon. The luminous efficiency of the down-conversion material luminescent material is higher.
  • the preset color light is blue light
  • the first color light is red light
  • the second color light is green light
  • the first light conversion material 11a converts blue light into red light
  • the second light conversion material 11b converts blue light into green light
  • the first light conversion material 11a includes red fluorescent glue; the second light conversion material 11b includes green fluorescent glue.
  • Fluorescent glue is a glue material containing fluorescent powder.
  • red fluorescent glue can convert blue light into red light
  • green fluorescent glue can convert blue light into green light.
  • the opening sizes of the first light conversion material 11a and the second light conversion material 11b are relatively small, and the fluorescent glue can fill only these openings well.
  • a quantum dot film 13 layer is provided on the side of the transparent substrate 1 facing away from the electrode layer 3.
  • Quantum dots are distributed in the quantum dot film 13.
  • the quantum dots are, for example, a semiconductor material with a crystalline structure with three dimensions on the order of nanometers, which is composed of zinc, cadmium, selenium, and sulfur atoms.
  • the energy level changes according to the size of the quantum dot, so the band gap can be controlled by changing the size of the quantum dot, thereby controlling the emission spectrum of the quantum dot. That is, quantum dots can convert light of one color into light of another color.
  • the quantum dot film 13 has crystal structures of different sizes distributed, and can emit light of composite colors, for example, can convert blue light into white light.
  • the quantum dot film 13 can be made into a larger-sized film layer, so it can be used to convert a large area of light.
  • the backplane is used as a surface light source.
  • it can be used as a backlight in a liquid crystal display.
  • the backlight source mostly adopts the structure of setting Mini-LED on the rigid circuit board.
  • the above-mentioned lamp board used as the backlight source can be made thinner in line width and the partition can be made more. Many, the control of the backlight can be made more precise.
  • a reflective layer 12 is provided between the transparent substrate 1 and the quantum dot film 13 layer, and the side of the reflective layer 12 facing away from the transparent substrate 1 is a reflective surface.
  • the reflective layer 12 allows the light emitted by the quantum dot film 13 in different directions to be emitted in a direction away from the transparent substrate 1, thereby improving the utilization rate of light.
  • the orthographic projection of the reflective layer 12 on the transparent substrate 1 and the orthographic projection of the micro-display light emitting device on the transparent substrate 1 do not overlap.
  • the path of the light emitted by the micro display device to the quantum dot film 13 is not degraded by the reflective layer. It is also to further improve the utilization rate of light.
  • the embodiments of the present disclosure also provide a display substrate, including the backplane provided in the foregoing embodiments.
  • An embodiment of the present disclosure also provides a display device, including the display substrate provided in the foregoing embodiment.

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Abstract

一种背板，包括：透明基底(1)；电极层(3)，设置在所述透明基底(1)的一侧，包括多条信号传输线；多个微显示发光器件，设置在所述电极层(3)背向所述透明基底(1)的一侧，所述微显示发光器件与所述信号传输线电连接，所述微显示发光器件能够朝向所述透明基底(1)一侧发光；保护层(6)，设置在所述微显示发光器件背向所述透明基底(1)的一侧；驱动模块，设置在所述保护层(6)背向所述透明基底(1)的一侧，与所述信号传输线电连接。还提供一种显示基板和显示装置。

Description

背板、显示基板和显示装置 技术领域
本公开涉及显示领域，特别涉及一种背板、显示基板和显示装置。
背景技术
微显示发光器件(例如是Micro-LED或Mini-LED)可用于制作显示基板，例如是微发光二极管显示基板。现有微发光二极管显示基板的制备工艺过于复杂，影响其进一步推广。
发明内容
本公开提出了一种背板、一种显示基板和一种显示装置。
第一方面，本公开提供一种背板，包括：透明基底；电极层，设置在所述透明基底的一侧，包括多条信号传输线；多个微显示发光器件，设置在所述电极层背向所述透明基底的一侧，所述微显示发光器件与所述信号传输线电连接，所述微显示发光器件能够朝向所述透明基底一侧发光；保护层，设置在所述微显示发光器件背向所述透明基底的一侧；驱动模块，设置在所述保护层背向所述透明基底的一侧，与所述信号传输线电连接。
在一些实施例中，在垂直于所述透明基底的方向上，所述电极层正对所述微显示发光器件的区域形成有开口。
在一些实施例中，所述背板划分为有效区域和围绕所述有效区域的边缘区域；所述保护层位于所述边缘区域的部分形成有连通至所述信号传输线的过孔，所述过孔内设置有连接电极，且所述连接电极延伸至所述保护层背向所述透明基底的一侧，所述驱动模块通过所述连接电极与 所述信号传输线连接。
在一些实施例中，在所述过孔内且位于所述连接电极背向所述透明基底的一侧设置有填孔胶。
在一些实施例中，所述背板划分为有效区域和围绕所述有效区域的边缘区域；所述保护层位于所述边缘区域的部分覆盖于所述边缘区域靠近所述有效区域的一侧，所述信号传输线位于所述边缘区域且未被所述保护层覆盖部分与所述驱动模块连接。
在一些实施例中，所述保护层位于所述边缘区域的部分，其背向所述显示区域有效区域的侧面为斜坡面。
在一些实施例中，所述电极层还包括与所述信号传输线相连的绑定电极，所述绑定电极包括第一子电极和第二子电极，所述微显示发光器件包括阴极和阳极，所述第一子电极与所述阴极和阳极中的一个连接，所述第二子电极与所述阴极和阳极中的另一个连接。
在一些实施例中，所述信号传输线包括第一子信号线和第二子信号线，所述第一子信号线与所述阴极和阳极中的一个连接，所述第二子信号线与所述阴极和阳极中的另一个连接。
在一些实施例中，全部所述微显示发光器件构成多个像素，每个像素包括至少三个微显示发光器件。
在一些实施例中，所述像素包括：第一微显示发光器件，配置为发出红光；第二微显示发光器件，配置为发出绿光；第三微显示发光器件，配置为发出蓝光。
在一些实施例中，所述像素包括：第一微显示发光器件，配置为发出预设颜色光，所述第一微显示发光器件与所述透明基底之间的所述开口内形成有第一光转换材料；第二微显示发光器件，配置为发出预设颜 色光，所述第二微显示发光器件与所述透明基底之间的所述开口内形成有第二光转换材料；第三微显示发光器件，配置为发出预设颜色光；所述第一光转换材料配置为将所述预设颜色光转换为第一颜色光，所述第二光转换材料配置为将所述预设颜色光转换为第二颜色光。
在一些实施例中，所述预设颜色光为蓝光，所述第一颜色光为红光，所述第二颜色光为绿光。
在一些实施例中，所述第一光转换材料包括红光荧光胶；所述第二光转换材料包括绿光荧光胶。
在一些实施例中，所述微显示发光器件包括：MinilED和microlED。
在一些实施例中，所述透明基底背向所述电极层的一侧设置有量子点膜层。
在一些实施例中，所述透明基底与所述量子点膜层之间设置有反射层，所述反射层背向所述透明基底的一侧为反光面。
在一些实施例中，所述反射膜反射层在所述透明基底上的正投影与所述微显示发光器件在所述透明基底上的正投影不交叠。
在一些实施例中，所述驱动模块包括：驱动芯片和与柔性电路板，所述柔性电路板包括若干条导电线路，所述导电线路的一端与所述驱动芯片连接，所述导电线路的另一端与所述信号传输线电连接。
第二方面，本公开提供一种显示基板，包括：本公开第一方面的背板。
第三方面，本公开提供一种显示装置，包括：本公开第一方面的显示基板。
附图说明
图1是相关技术中微发光二极管显示装置的结构示意图；
图2a为本公开的实施例的背板的正视图；
图2b为在一些实施例中图2所示背板沿AA线的剖视图；
图3为图2b所示背板在制备的第一阶段的结构示意图；
图4为图2b所示背板在制备的第二阶段的结构示意图；
图5为本公开的一些实施例的背板的正视图；
图6为图5所示背板沿BB线的剖视图；
图7为在一些实施例中图2a所述背板沿AA线的剖视图；
图8为在一些实施例中图2a所述背板沿AA线的剖视图。
附图标记为：1＇、硬质基底；1、透明基底；1A、有效区域；1B、边缘区域；2、第一绝缘层；3、电极层；31、第一子信号线；32、第二子信号线；3a、连接电极；4、第二绝缘层；5a、第一微显示发光器件；5b、第二微显示发光器件；5c、第三微显示发光器件；51、阴极；52、阳极；6、保护层；7、柔性电路板；8、硬质电路板；9、驱动芯片；10、填孔胶；11a、第一光转换材料；11b、第二光转换材料；12、反射层；13、量子点膜层；H、过孔。
具体实施方式
为使本领域的技术人员更好地理解本公开的技术方案，下面结合附图对本公开提供的一种背板、显示基板、显示装置进行详细描述。
在下文中将参考附图更充分地描述示例实施例，但是所述示例实施例可以以不同形式来体现且不应当被解释为限于本文阐述的实施例。反之，提供这些实施例的目的在于使本公开透彻和完整，并将使本领域技术人员充分理解本公开的范围。
本公开所使用的术语仅用于描述特定实施例，且不意欲限制本公开。如本文所使用的，单数形式“一个”和“该”也意欲包括复数形式，除 非上下文另外清楚指出。还将理解的是，当本说明书中使用术语“包括”和/或“由……制成”时，指定存在所述特征、整体、步骤、操作、元件和/或组件，但不排除存在或添加一个或多个其他特征、整体、步骤、操作、元件、组件和/或其群组。
将理解的是，虽然本文可以使用术语第一、第二等来描述各种元件/部件/结构，但这些元件/部件/结构不应当受限于这些术语。这些术语仅用于区分一个元件/部件/结构和另一元件/部件/结构。
除非另外限定，否则本文所用的所有术语(包括技术和科学术语)的含义与本领域普通技术人员通常理解的含义相同。还将理解，诸如那些在常用字典中限定的那些术语应当被解释为具有与其在相关技术以及本公开的背景下的含义一致的含义，且将不解释为具有理想化或过度形式上的含义，除非本文明确如此限定。
本公开所使用的“构图工艺”是指形成具有特定的图形的结构的步骤，其可为光刻工艺，光刻工艺包括形成材料层、涂布光刻胶、曝光、显影、刻蚀、光刻胶剥离等步骤中的一步或多步；当然，“构图工艺”也可为压印工艺、喷墨打印工艺等其它工艺。
本公开中提到的两个结构电连接，是指这两个结构之间能够传输电流。本公开中提到的两个结构连接，是指这两个结构接触并且二者之间能够传输电流。
参见图1，相关技术中，微发光二极管显示装置由硬质基底1＇(材料例如是玻璃)、设置在硬质基底1＇上的电极层3、绑定在电极层3背向硬质基底1＇一侧的多个微发光二极管(标注为第一微显示发光器件5a、第二微显示发光器件5b、第三微显示发光器件5c)、覆盖各个微发光二极管的保护胶6以及柔性电路板7。柔性电路板7上还可以设置驱动芯片(未示出)等结构。微发光二极管设置在硬质基底1＇所在 平面的第一侧，柔性电路板7设置在硬质基底1＇所在平面的第二侧，第一侧和第二侧为相对的两侧。为实现柔性电路板7与各微发光二极管的电连接，需要在硬质基底1＇的侧面布线。侧面布线的工艺难度大，所需要的设备更加复杂和昂贵。
参见图2a-图8，本公开的实施例提供一种背板，包括：透明基底1；电极层3，设置在透明基底1的一侧，包括多条信号传输线；多个微显示发光器件，设置在电极层3背向透明基底1的一侧，微显示发光器件与信号传输线电连接，微显示发光器件能够朝向透明基底1一侧发光；保护层6，设置在微显示发光器件背向透明基底1的一侧；驱动模块，设置在保护层6背向透明基底1的一侧，与信号传输线电连接。
透明基底1例如是玻璃基底。
微显示发光器件是指小尺寸的发光器件，例如是Micro-LED(整体尺寸通常在100um以下)或Mini-LED(整体尺寸通常在100um-200um之间)。
保护层6对微显示发光器件进行电气保护和机械保护，保护层6的材料例如是硅胶、环氧胶等，可通过点胶机涂覆(Dispensing)工艺或注塑(Molding)工艺形成。
驱动模块例如由驱动芯片9、硬质电路板8、柔性电路板7构成，其中，驱动芯片9绑定在硬质电路板8上以将驱动信号传递至硬质电路板8；柔性电路板7也绑定在硬质电路板8上以将驱动信号从硬质电路板8传递至柔性电路板7；而柔性电路板7与电极层3的电连接，从而将驱动信号从柔性电路板7传递至电极层3；最终由电极层3驱动微显示发光器件发光。
在一些实施例中，驱动模块也可以是包括：驱动芯片9和与柔性电 路板7，柔性电路板7包括若干条导电线路(未示出)，导电线路的一端与驱动芯片9连接，导电线路的另一端与信号传输线电连接(即与电极层3电连接)。
例如参见图2b，其中的驱动芯片9直接绑定在柔性电路板7上，而不是经由硬质电路板8实现驱动芯片9与柔性电路板7之间的电连接。即在驱动模块中上述硬质电路板8是可选的部件。
在本公开的实施例所提供的背板中，微显示发光器件和驱动模块设置在透明基底1所处平面的同一侧，为使微显示发光器件与驱动模块之间形成电连接的结构也相应地设置在透明基底1所处平面的该同一侧，如此无需在透明基底1的侧面进行布线，使得背板的制造工艺简单，成本降低。
透明基底1与电极层3之间还可以设置第一绝缘层2，例如是聚酰亚胺(PI)层或透明热塑性聚酰亚胺(TPI)层。
电极层3内可以设置单层信号传输线或者多层，参见图2b，其中，电极层3内设置了两层信号传输线，两层信号传输线之间由第二绝缘层4隔开，第二绝缘层4的材料例如是聚酰亚胺(PI)层或透明热塑性聚酰亚胺(TPI)层。
在一些实施例中，在垂直于透明基底1的方向上，电极层3正对微显示发光器件的区域形成有开口。由于微显示发光器件是朝向透明基底1发光的，电极层3中所形成的开口有利于提高背板的透过率。
参见图2b，可通过构图工艺在第一绝缘层2上形成第一层信号传输线的图案，对应于待形成开口的区域内的第一层信号传输线材料被去除。
随后通过构图工艺在第一层信号传输线上形成第二绝缘层4的图案，同时对应于待形成开口的区域内的第二绝缘层4材料被保留(后续 工艺中被去除)，待去除的第二绝缘层4材料与最终成品中的第二绝缘层4之间留有缝隙。
然后沉积用于形成第二层信号传输线的导电材料，该导电材料会填充上述缝隙，采用曝光、显影、刻蚀的工艺形成第二层信号线的图案，此时，待形成开口的区域内的导电材料被去除。
最后去除待形成开口的区域内残留的第二绝缘层4材料。
参见图2a-图4，在一些实施例中，背板划分为有效区域1A和围绕有效区域1A的边缘区域1B；保护层6位于边缘区域1B的部分形成有连通至信号传输线的过孔H，过孔H内设置有连接电极3a，且连接电极3a延伸至保护层6背向透明基底1的一侧，驱动模块通过连接电极3a与信号传输线连接。
有效区域1A(Active Area，也称AA区)内设置有多个微显示发光器件，例如是呈阵列式分布；连接电极3a作为电极层3与外界联系的接口；驱动模块中的柔性电路板7在保护层6背向透明基底1的表面上实现与连接电极3a的连接。
参见图3，首先在透明基底1上(具体为第一绝缘层2上)形成导电层，例如可采用溅射、光刻、或电镀等工艺形成电极层3内的信号传输线，其中，在边缘区域1B形成有连接电极3a；然后将微显示发光器件绑定在导电层上；接下来形成保护层6，其中，保护层6覆盖连接电极3a。
可通过诸如焊接、共晶等方式将微显示发光器件绑定在导电层上。
参见图4，在形成保护层6之后，在保护层6中形成过孔H，以暴露连接电极3a；随后利用构图工艺将过孔H底部的连接电极3a延伸至过孔H外。
参见图2b，在将连接电极3a延伸至过孔H外之后，将柔性电路板7与连接电极3a绑定在一起。
参见图2b，在一些实施例中，在过孔H内且位于连接电极3a背向透明基底1的一侧设置有填孔胶10。
填孔胶10的材料例如是硅胶、环氧树脂、紫外固化胶、丙烯酸等，以实现对过孔H内线路的保护。
参见图5和图6，在一些实施例中，背板划分为有效区域1A和围绕有效区域1A的边缘区域1B；保护层6位于边缘区域1B的部分覆盖于边缘区域1B靠近有效区域1A的一侧，信号传输线位于边缘区域1B且未被保护层6覆盖部分与驱动模块连接。
如此，在制备这种类型的背板时，在形成保护层6之后，背板边缘区域1B的外侧部分将一整片区域的电极层3暴露出来，以便于在电极层3所被暴露的位置处连接(或称绑定)柔性电路板7。
参见图6，在一些实施例中，保护层6位于边缘区域1B的部分，其背向显示区域有效区域的侧面为斜坡面。
可以首先在透明基底1上形成整层的保护层6的材料，再利用诸如光刻等的构图工艺去除位于边缘区域1B靠近其外围边界处的整块的保护层6的材料，通过控制刻蚀工艺的参数实现保护层6在边缘区域1B的中部形成较为平缓的坡度。
如此，便于在绑定柔性电路板7时，柔性电路板7不会产生较大程度的弯折，便于提高产品的良率以及减少绑定时的难度。
参见图2b以及图6-图8，在一些实施例中，信号传输线包括第一子信号线31和第二子信号线32，第一子信号线31与阴极51和阳极52中的一个连接，第二子信号线32与阴极51和阳极52中的另一个连接。
即微显示发光器件可以是绑定在信号传输线上。
在一些实施例中，电极层3还包括与信号传输线相连的绑定电极(未示出)，绑定电极包括第一子电极和第二子电极，微显示发光器件包括阴极51和阳极52，第一子电极与阴极51和阳极52中的一个连接，第二子电极与阴极51和阳极52中的另一个连接。
当然，微显示发光器件也可是绑定在绑定电极上，而绑定电极由与信号传输线连接的一段导电材料形成。
以上均是为了实现微显示发光器件与电极层3之间的电连接，具体连接的方式不限于此。
参见图2b和图6-图7，在一些实施例中，全部微显示发光器件构成多个像素，每个像素包括至少三个微显示发光器件。
如此，该背板可作为显示基板的一部分。
参加图2b和图6，在一些实施例中，像素包括：第一微显示发光器件5a，配置为发出红光；第二微显示发光器件5b，配置为发出绿光；第三微显示发光器件5c，配置为发出蓝光。
即每一个微显示发光器件对应形成一种颜色的子像素。
参见图7，在一些实施例中，像素包括：第一微显示发光器件5a，配置为发出预设颜色光，第一微显示发光器件5a与透明基底1之间的开口内形成有第一光转换材料11a；第二微显示发光器件5b，配置为发出预设颜色光，第二微显示发光器件5b与透明基底1之间的开口内形成有第二光转换材料11b；第三微显示发光器件5c，配置为发出预设颜色光；第一光转换材料11a配置为将预设颜色光转换为第一颜色光，第二光转换材料11b配置为将预设颜色光转换为第二颜色光。
所述微显示发光器件均采用发出相同颜色的微显示发光器件，即不 同颜色的子像素中的微显示发光器件的电气特性都是一样的，如此可以使得对微显示发光器件的驱动模块的设计更为简单。
第一光转换材料11a和第二光转换材料11b均可选用下转换材料发光材料。下转换材料发光材料是指能够在吸收一个高能光子的紫外光后，发射两个或多个低能光子的材料。选用下转换材料发光材料的发光效率较高。
在一些实施例中，预设颜色光为蓝光，第一颜色光为红光，第二颜色光为绿光。
即第一光转换材料11a将蓝光转换成红光，第二光转换材料11b将蓝光转换成绿光。
在一些实施例中，第一光转换材料11a包括红光荧光胶；第二光转换材料11b包括绿光荧光胶。
荧光胶即包含荧光粉的胶材，例如可由红光荧光胶将蓝光转换成红光，由绿色荧光胶将蓝光转换成绿光。第一光转换材料11a和第二光转换材料11b是处开口尺寸相对较小，而荧光胶能够很好地填充仅这些开口内。
参见图8，在一些实施例中，透明基底1背向电极层3的一侧设置有量子点膜13层。
量子点膜13内分布有量子点，量子点例如是由锌、镉、硒和硫原子组合而成的一种三个维度尺寸均在纳米数量级的结晶结构的半导体材料。在量子点中，能级根据量子点的尺寸而改变，因此可以通过改变量子点的尺寸来控制带隙，从而控制量子点的发射光谱。即量子点可将一种颜色的光转换成另外一种颜色的光，如量子点膜13内分布有不同尺寸的结晶结构，则可以发出复合颜色的光，例如可以将蓝光转换成白光。 现有工艺中量子点膜13能够制成较大尺寸的膜层，故可用于对大面积的光进行转化。
在这些实施例中，背板作为一个面光源而应用。例如可以作为液晶显示中的背光源。
相关技术中背光源多采用硬质电路板上设置Mini-LED的结构，作为背光源应用的上述灯板相较于相关技术中的背光源，线宽可以制作得更细，分区可以制作得更多，对背光源的控制可以做得更加精细。
在一些实施例中，透明基底1与量子点膜13层之间设置有反射层12，反射层12背向透明基底1的一侧为反光面。
反射层12使得量子点膜13发出的方向各异的光均朝向远离透明基底1的方向射出，从而提高了光的利用率。
在一些实施例中，反射层12在透明基底1上的正投影与微显示发光器件在透明基底1上的正投影不交叠。
如此设置，可以使得微显示器件发出的光到达量子点膜13的路径中不因反射层而有所减损。也是为了进一步提高光的利用率。
本公开实施例还提供一种显示基板，包括：前述实施例提供的背板。
本公开实施例还提供一种显示装置，包括：前述实施例提供的显示基板。
可以理解的是，以上实施方式仅仅是为了说明本公开的原理而采用的示例性实施方式，然而本公开并不局限于此。对于本领域内的普通技术人员而言，在不脱离本公开的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本公开的保护范围。

Claims (20)

  1. 一种背板，其中，包括：
    透明基底；
    电极层，设置在所述透明基底的一侧，包括多条信号传输线；
    多个微显示发光器件，设置在所述电极层背向所述透明基底的一侧，所述微显示发光器件与所述信号传输线电连接，所述微显示发光器件能够朝向所述透明基底一侧发光；
    保护层，设置在所述微显示发光器件背向所述透明基底的一侧；
    驱动模块，设置在所述保护层背向所述透明基底的一侧，与所述信号传输线电连接。
  2. 根据权利要求1所述的背板，其中，在垂直于所述透明基底的方向上，所述电极层正对所述微显示发光器件的区域形成有开口。
  3. 根据权利要求1所述的背板，其中，所述背板划分为有效区域和围绕所述有效区域的边缘区域；
    所述保护层位于所述边缘区域的部分形成有连通至所述信号传输线的过孔，所述过孔内设置有连接电极，且所述连接电极延伸至所述保护层背向所述透明基底的一侧，所述驱动模块通过所述连接电极与所述信号传输线连接。
  4. 根据权利要求3所述的背板，其中，在所述过孔内且位于所述连 接电极背向所述透明基底的一侧设置有填孔胶。
  5. 根据权利要求1所述的背板，其中，所述背板划分为有效区域和围绕所述有效区域的边缘区域；
    所述保护层位于所述边缘区域的部分覆盖于所述边缘区域靠近所述有效区域的一侧，所述信号传输线位于所述边缘区域且未被所述保护层覆盖部分与所述驱动模块连接。
  6. 根据权利要求5所述的背板，其中，所述保护层位于所述边缘区域的部分，其背向所述显示区域有效区域的侧面为斜坡面。
  7. 根据权利要求1所述的背板，其中，所述电极层还包括与所述信号传输线相连的绑定电极，所述绑定电极包括第一子电极和第二子电极，所述微显示发光器件包括阴极和阳极，所述第一子电极与所述阴极和阳极中的一个连接，所述第二子电极与所述阴极和阳极中的另一个连接。
  8. 根据权利要求7所述的背板，其中，所述信号传输线包括第一子信号线和第二子信号线，所述第一子信号线与所述阴极和阳极中的一个连接，所述第二子信号线与所述阴极和阳极中的另一个连接。
  9. 根据权利要求2所述的背板，其中，全部所述微显示发光器件构成多个像素，每个像素包括至少三个微显示发光器件。
  10. 根据权利要求9所述的背板，其中，所述像素包括：
    第一微显示发光器件，配置为发出红光；
    第二微显示发光器件，配置为发出绿光；
    第三微显示发光器件，配置为发出蓝光。
  11. 根据权利要求9所述的背板，其中，所述像素包括：
    第一微显示发光器件，配置为发出预设颜色光，所述第一微显示发光器件与所述透明基底之间的所述开口内形成有第一光转换材料；
    第二微显示发光器件，配置为发出预设颜色光，所述第二微显示发光器件与所述透明基底之间的所述开口内形成有第二光转换材料；
    第三微显示发光器件，配置为发出预设颜色光；
    所述第一光转换材料配置为将所述预设颜色光转换为第一颜色光，所述第二光转换材料配置为将所述预设颜色光转换为第二颜色光。
  12. 根据权利要求11所述的背板，其中，所述预设颜色光为蓝光，所述第一颜色光为红光，所述第二颜色光为绿光。
  13. 根据权利要求12所述的背板，其中，所述第一光转换材料包括红光荧光胶；
    所述第二光转换材料包括绿光荧光胶。
  14. 根据权利要求1-13任一所述的背板，其中，所述微显示发光器 件包括：Mini-LED和Micro-LED。
  15. 据权利要求14述的背板，其中，所述透明基底背向所述电极层的一侧设置有量子点膜层。
  16. 据权利要求15述的背板，其中，所述透明基底与所述量子点膜层之间设置有反射层，所述反射层背向所述透明基底的一侧为反光面。
  17. 根据权利要求16所述的背板，其中，所述反射层在所述透明基底上的正投影与所述微显示发光器件在所述透明基底上的正投影不交叠。
  18. 根据权利要求1-17任一所述的背板，其中，所述驱动模块包括：驱动芯片和与柔性电路板，所述柔性电路板包括若干条导电线路，所述导电线路的一端与所述驱动芯片连接，所述导电线路的另一端与所述信号传输线电连接。
  19. 一种显示基板，其中，包括：根据权利要求1-18任一所述的背板。
  20. 一种显示装置，其中，包括：根据权利要求19所述的显示基板。
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