WO2021087803A1 - 有机发光显示基板及其制作方法、有机发光显示装置 - Google Patents

有机发光显示基板及其制作方法、有机发光显示装置 Download PDF

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Publication number
WO2021087803A1
WO2021087803A1 PCT/CN2019/115960 CN2019115960W WO2021087803A1 WO 2021087803 A1 WO2021087803 A1 WO 2021087803A1 CN 2019115960 W CN2019115960 W CN 2019115960W WO 2021087803 A1 WO2021087803 A1 WO 2021087803A1
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WIPO (PCT)
Prior art keywords
layer
base substrate
area
organic light
partition wall
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PCT/CN2019/115960
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English (en)
French (fr)
Inventor
宋尊庆
王品凡
曹方旭
张慧娟
Original Assignee
京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/975,293 priority Critical patent/US20220328593A1/en
Priority to CN201980002314.6A priority patent/CN113330573B/zh
Priority to PCT/CN2019/115960 priority patent/WO2021087803A1/zh
Publication of WO2021087803A1 publication Critical patent/WO2021087803A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present disclosure relates to the field of display technology, and in particular to an organic light-emitting display substrate, a manufacturing method thereof, and an organic light-emitting display device.
  • Organic light-emitting display devices are listed as a promising next-generation display technology due to their advantages of lightness, thinness, flexibility, low power consumption, wide color gamut, and high contrast.
  • the organic light-emitting device is usually packaged by a thin-film packaging technology to prevent water and oxygen from entering and eventually causing the OLED device to fail.
  • an organic light emitting display substrate including a display area and an opening area located in the display area, and the structure of the display area includes:
  • the partition pattern layer is located on one side of the base substrate and includes a partition wall arranged around the opening area.
  • the partition wall includes a wall portion and a shielding portion located on the side of the wall body away from the base substrate, and the shielding portion is on the base substrate.
  • the orthographic projection of covers the orthographic projection of the wall portion on the base substrate, and the orthographic projection area of the shielding portion on the base substrate is larger than the orthographic projection area of the wall portion on the base substrate;
  • the organic vapor deposition layer is located on the side of the partition pattern layer away from the base substrate, and the organic vapor deposition layer is blocked by the partition wall and is discontinuous.
  • the display area includes a plurality of island areas separated by opening areas, and a bridge area connected between the island areas, the island area is provided with a pixel area, the bridge area is provided with a wiring area, and both sides of the partition wall Separate from the pixel area and the wiring area.
  • the partition wall further includes a base part located on the side of the wall part close to the base substrate.
  • a base part located on the side of the wall part close to the base substrate.
  • the shielding part forms an I-shaped structure.
  • the base material is titanium, the wall material is aluminum, and the shield material is titanium; or, the base material is molybdenum, the wall material is aluminum, and the shield material is molybdenum.
  • the partition wall further includes a supporting part connected to the surface of the shielding part away from the wall part.
  • the base substrate is a flexible substrate, and the base substrate includes an organic body layer and an inorganic barrier layer that are stacked, and the partition pattern layer is formed on the surface of the inorganic barrier layer away from the organic body layer.
  • the organic vapor deposition layer is a non-patterned organic vapor deposition layer.
  • the pixel area is provided with an organic light-emitting device, and the organic vapor deposition layer includes a non-patterned functional layer of the organic light-emitting device.
  • the pixel area is further provided with a pixel circuit, the pixel circuit is located on the side of the organic light-emitting device close to the base substrate, the pixel circuit includes a thin film transistor device and a capacitive device, and the structure of the pixel circuit includes:
  • the wiring area is provided with a wiring and a wiring covering layer located on a side of the wiring away from the base substrate.
  • an organic light emitting display device including the organic light emitting display substrate according to any one of the foregoing technical solutions.
  • the manufacturing method includes:
  • a partition pattern layer is formed on one side of the base substrate.
  • the partition pattern layer includes a partition wall arranged around the opening area.
  • the partition wall includes a wall part and a shielding part located on the side of the wall away from the base substrate.
  • the orthographic projection on the base substrate covers the orthographic projection of the wall portion on the base substrate, and the orthographic projection area of the shielding portion on the base substrate is larger than the orthographic projection area of the wall portion on the base substrate;
  • An organic vapor deposition layer is formed on the side of the partition pattern layer away from the base substrate, and the organic vapor deposition layer is blocked by the partition wall and is discontinuous.
  • the display area includes a plurality of island areas separated by opening areas, and a bridge area connected between the island areas, the island area is provided with a pixel area, and the bridge area is provided with a wiring area;
  • the partition pattern layer is formed on one side of the base substrate, including:
  • the partition wall is formed on one side of the base substrate, which is arranged around the opening area and is separated from the pixel area and the wiring area on both sides.
  • the partition wall further includes a base part located on the side of the wall part close to the base substrate.
  • the base part, the wall part and The shielding part forms an I-shaped structure; the forming a partition pattern layer on one side of the base substrate includes:
  • the prefabricated line of the partition wall is formed by dry etching on one side of the base substrate.
  • the prefabricated line of the partition wall includes a titanium layer, an aluminum layer and a titanium layer arranged in a direction away from the base substrate. Molybdenum layer, aluminum layer and molybdenum layer arranged in sequence in the direction of the base substrate;
  • the prefabricated line of the partition wall is wet-etched to form the I-shaped structure of the partition wall.
  • the pixel area is provided with an organic light-emitting device, and the I-shaped structure of the partition wall is formed in a wet etching process of the anode of the organic light-emitting device.
  • the manufacturing method before forming the I-shaped structure of the partition wall and the anode of the organic light emitting device, the manufacturing method includes:
  • the buffer layer, the active layer of the thin film transistor, the first insulating layer, the first metal layer, the second insulating layer, the second metal layer and the third insulating layer are sequentially formed on the side of the base substrate where the inorganic barrier layer is provided.
  • the buffer layer, the first insulating layer, the second insulating layer and the third insulating layer are spread over the island area and the bridge area, the active layer, the first metal layer and the second metal layer are located in the pixel area, and the first metal layer includes thin film transistors.
  • the gate and the first plate of the capacitive device, and the second metal layer includes the second plate of the capacitive device;
  • inorganic barrier layer as a mask to etch away the organic body layer in the opening area to form openings
  • a third metal layer is formed on the side of the third insulating layer away from the base substrate.
  • the third metal layer includes the source of the thin film transistor device formed on the side of the third insulating layer away from the base substrate and connected to the active layer through a via hole. Electrodes and drains, traces formed on the side of the inorganic barrier layer away from the base substrate and located in the wiring area, and prefabricated lines of partition walls formed on the side of the inorganic barrier layer away from the base substrate and arranged around the opening area;
  • a planarization layer is formed on the side of the third metal layer away from the base substrate.
  • the planarization layer includes a first part, a second part and a third part spaced apart.
  • the first part covers the pixel area and has a via hole leading to the drain.
  • the second part covers the wiring area, and the third part only covers the surface of the prefabricated line of the partition wall away from the base substrate.
  • FIG. 1 is a front view of a related art organic light emitting display substrate
  • FIG. 2 is a front view and a partial cross-sectional schematic diagram of an organic light emitting display substrate according to an embodiment of the present disclosure
  • Figure 3 is a schematic diagram of film formation by vapor deposition
  • FIG. 4 is a schematic partial cross-sectional view of an organic light emitting display substrate according to another embodiment of the present disclosure.
  • FIG. 5 is a schematic diagram of an organic light emitting display device in a bent state according to an embodiment of the present disclosure
  • FIG. 6 is a flowchart of a manufacturing method of an organic light-emitting display substrate according to an embodiment of the present disclosure
  • FIG. 7 is a schematic diagram of a manufacturing process of an organic light emitting display substrate according to an embodiment of the present disclosure.
  • a specific component when it is described that a specific component is located between the first component and the second component, there may or may not be an intermediate component between the specific component and the first component or the second component.
  • the specific component When it is described that a specific component is connected to another component, the specific component may be directly connected to the other component without an intervening component, or may not be directly connected to the other component but with an intervening component.
  • an organic light emitting display substrate 1'of the related art includes a plurality of island regions 10' separated by opening regions 30', and bridge regions 20' connected between the island regions 10'.
  • the area 10' is provided with an organic light emitting device 504', and the bridge area 20' is provided with wiring (not shown in the figure).
  • the organic light-emitting display substrate 1' uses a flexible substrate as a substrate, supplemented by an opening design, so that curved display, flexible display and even stretch display can be realized.
  • TFE thin film encapsulation
  • the embodiments of the present disclosure provide an organic light-emitting display substrate, a manufacturing method thereof, and an organic light-emitting display device.
  • the organic light emitting display substrate 1 provided by an embodiment of the present disclosure includes a display area 100 and an opening area 30 located in the display area 100.
  • the structure of the display area 100 includes:
  • the partition pattern layer 502 is located on one side of the base substrate 501 and includes a partition wall 5021 arranged around the opening area 30.
  • the partition wall 5021 includes a wall portion 5021a and a shielding portion located on the side of the wall portion 5021a away from the base substrate 501 5021b, the orthographic projection of the shielding portion 5021b on the base substrate 501 covers the orthographic projection of the wall portion 5021a on the base substrate 501, and the orthographic projection area of the shielding portion 5021b on the base substrate 501 is larger than that of the wall portion 5021a on the lining The orthographic projection area on the base substrate 501;
  • the organic vapor deposition layer 503 is located on the side of the partition pattern layer 502 away from the base substrate 501, and the organic vapor deposition layer 503 is blocked by the partition wall 5021 and is not continuous.
  • the base substrate 501 may be a flexible substrate or a rigid substrate, and the specific type thereof is not limited.
  • the partition pattern layer 502 may only include a partition wall 5021 arranged around the opening area 30.
  • the partition pattern layer may also include a plurality of partition walls, which are respectively arranged around different opening areas.
  • the opening area 30 can be used to accommodate functional devices such as a camera or a sensor, and the partition pattern layer 502 includes a partition wall 5021.
  • the structure of the organic light emitting display substrate 1 further includes a thin film encapsulation layer 510.
  • the evaporation process is used many times, which refers to: heating the evaporation material under a certain vacuum condition to melt or sublime the evaporation material into a vapor composed of atoms, molecules or atomic groups, and then Condensation forms a film on the surface of the substrate.
  • the organic vapor deposition layer 503 in the present disclosure is an organic layer formed by a vapor deposition process.
  • the organic vapor deposition layer 503 may be a functional layer of an organic light-emitting device that uses organic materials, such as a hole injection layer, an electron injection layer, and a cavity. Hole transport layer, electron transport layer, electron blocking layer, hole blocking layer or light emitting layer, etc.
  • the opening design provides the possibility that water and oxygen enter the organic light-emitting device from the opening area through the organic layer, and the failure of the organic light-emitting device sometimes occurs.
  • the partition pattern layer is formed first, and then the organic vapor deposition layer is formed.
  • the vapor deposition gas basically forms a film along the normal direction of the substrate, the shielding part of the partition wall can effectively block the vapor deposition gas from forming a film on the wall surface of the partition wall, thereby combining the two The organic vapor deposition layer on the side is disconnected, making it discontinuous.
  • the organic vapor deposition layer is disconnected at the partition wall, which is equivalent to cutting off the passage of water and oxygen from the open area into the inside of the organic light-emitting display substrate, thus improving the organic light-emitting display
  • the packaging performance of the substrate prolongs the service life of the organic light emitting display device.
  • the organic light-emitting display substrate 1 provided by another embodiment of the present disclosure adopts an opening design similar to the related art.
  • the display area includes a plurality of island regions 10 separated by the opening region 30, and
  • the bridge area 20 is connected between the island areas 10 (only a partial structure is shown in the figure), the island area 10 is provided with a pixel area 110, the bridge area 20 is provided with a wiring area 210, and a partition wall 5021 that partitions the pattern layer 502 is provided at
  • the island area 10 and the bridge area 20 are arranged around the opening area 30, and the two sides of the partition wall 5021 are separated from the pixel area 110 and the wiring area 210, respectively.
  • the organic light-emitting display substrate 1 of this embodiment adopts a base substrate 501 supplemented with an opening design, which can realize curved display, flexible display and even stretch display.
  • the specific pattern of the island area 10, the bridge area 20 and the opening area 30 of the organic light emitting display substrate 1 is not limited.
  • the pixel area 110 of the organic light emitting display substrate 1 is provided with one or more organic light emitting devices 504, and the wiring area 210 is provided with wiring 2101 to provide signals for the island area 10. Transmission channel.
  • the organic light emitting display substrate 1 may be the active matrix organic light emitting display substrate shown in the embodiment of FIG. 4. In other embodiments, the organic light emitting display substrate may also be a passive matrix organic light emitting display substrate.
  • the active matrix organic light-emitting display substrate is further provided with a pixel circuit 507 in the pixel area 110, and each organic light-emitting device 504 is controlled by the pixel circuit 507, so that continuous and independent light emission can be realized.
  • the structure of the organic light-emitting display substrate 1 further includes the structure of the island region 10 and the bridge region 20 The structure is integrated with a thin film encapsulation layer 510.
  • the cross-sectional structure of the partition wall can be T-shaped, I-shaped, inverted L-shaped, and so on. It should be noted that, in the embodiments of the present disclosure, the cross section of the partition wall refers to the cross section of the partition wall that passes through the center of the opening area and is perpendicular to the base substrate.
  • the partition wall 5021 in addition to the wall portion 5021a and the shielding portion 5021b, also includes a base portion 5021c located on the side of the wall portion 5021a close to the base substrate 501.
  • the base portion 5021c, the wall portion 5021a, and the shielding portion 5021b form an I-shaped structure.
  • the base portion 5021c is made of titanium
  • the wall portion 5021a is made of aluminum
  • the shielding portion 5021b is made of titanium
  • the base portion 5021c is made of molybdenum
  • the wall portion 5021a is made of aluminum
  • the shielding portion 5021b is made of molybdenum.
  • the partition wall prefabricated line 5021" of titanium aluminum titanium or molybdenum aluminum molybdenum material may be formed by a dry etching process, and then a wet etching The process forms the aforementioned I-shaped structure of the partition wall 5021.
  • the aforementioned I-shaped structure of the partition wall 5021 may be formed by a single wet etching process alone, or may be simultaneously formed in a wet etching process of other structural layers.
  • the partition wall 5021 further includes a supporting portion 5021d connected to the surface of the shielding portion 5021b away from the wall portion 5021a.
  • the supporting portion 5021d can support the shielding portion 5021b to prevent the shielding portion 5021b from falling to the side of the base substrate 501.
  • the supporting portion 5021d can be formed by a single patterning process alone, or can be formed simultaneously in a patterning process of other layer structures of the same material. Referring to step S107 of FIG. 7, in one embodiment, the supporting portion 5021d is made of organic materials and is simultaneously formed in the patterning process of the planarization layer 5080 of the organic light emitting display substrate. Since the supporting portion 5021d is patterned and only covers the shielding portion 5021b of the aforementioned I-shaped structure, and does not extend to the cross section of the opening, it will not affect the packaging performance of the organic light emitting display substrate 1.
  • the base substrate 501 is a flexible substrate. As shown in FIG. 4, the base substrate 501 includes an organic body layer 501a and an inorganic barrier layer 501b that are stacked, and the partition pattern layer 502 is formed on the inorganic barrier layer 501b. The surface away from the organic body layer 501a, that is, the partition wall 5021 is connected to the inorganic barrier layer 501b.
  • the inorganic barrier layer 501b is made of inorganic material, which can be more densely combined with the metal material of the partition wall 5021, and the water and oxygen transmission rate of the inorganic material is much lower than that of the organic material, so it can effectively prevent the entry of water and oxygen.
  • the inorganic barrier layer 501b can also prevent impurity particles in the organic body layer 501a from entering the channel region of the active layer 5071a of the thin film transistor device 5071, thereby affecting device characteristics.
  • the organic vapor deposition layer 503 is a non-patterned organic vapor deposition layer.
  • the non-patterned organic vapor-deposited layer refers to an organic vapor-deposited layer that does not need to be formed through a patterning process, and a mask is not required in the manufacturing process.
  • the non-patterned organic vapor deposition layer 503 is, for example, a hole injection layer, an electron injection layer, a hole transport layer, an electron transport layer, an electron blocking layer, or a hole blocking layer of the organic light emitting device 504.
  • the organic vapor deposition layer 503 may also be a patterned organic vapor deposition layer that also forms a film around the opening area 30. Due to the blocking effect of the partition wall 5021, the organic vapor deposition layer The plating layer 503 is not continuous at the partition wall 5021, so the entry of water and oxygen can still be cut off.
  • the pixel area 110 is also provided with a pixel circuit 507.
  • the pixel circuit 507 is located on the side of the organic light-emitting device 504 close to the base substrate 501.
  • 507 includes a thin film transistor device 5071 and a capacitive device 5072.
  • the structure of the pixel circuit 507 includes: a buffer layer 5073, an active layer 5071a of a thin film transistor device 5071, a first insulating layer 5074, a first metal layer 5075, a second insulating layer 5076, and a second insulating layer 5073 arranged in a direction away from the base substrate 501 in sequence.
  • the second metal layer 5077 includes the second plate 5072b of the capacitive device 5072, and the third metal layer 5078 includes a source 5071c and a drain 5071d connected to the active layer 5071a through via holes.
  • a wiring covering layer 2102 is also provided on the side of the wiring 2101 away from the base substrate 501.
  • the structure of the organic light emitting device 504 of the pixel area 110 includes an anode 5041, a plurality of functional layers 5042 of organic materials, and a cathode 5043 located on the side of the planarization layer 5080 away from the base substrate 501 and arranged in a direction away from the base substrate 501 in sequence.
  • the planarization layer 5080 is further provided with a pixel defining layer 505 on the side away from the base substrate 501.
  • each organic light-emitting device 504 is separated by a pixel defining layer 505, and the cathode 5043 of each organic light-emitting device 504 or the cathode 5043 of some organic light-emitting devices 504 can be connected as a whole to have an equipotential.
  • the light-emitting layer of the organic light-emitting device 504 needs to be formed by a patterned evaporation process using a mask to support the mask during the evaporation process.
  • the pixel defining layer 505 is further away from the substrate.
  • a spacer layer 506 is provided on one side of the substrate 501.
  • the thin film transistor device 5071 is a low temperature polysilicon (LTPS) thin film transistor device, and its electron mobility can reach more than 200cm 2 /V*sec, which can effectively reduce the area of the thin film transistor device, thereby helping to improve the pixel The aperture ratio reduces power consumption.
  • LTPS low temperature polysilicon
  • thin film transistor devices are not limited to low-temperature polysilicon thin film transistor devices, but can also be semiconductor oxide thin film transistor devices, amorphous silicon thin film transistor devices or microcrystalline silicon thin film transistor devices, etc., different types of thin film transistors The structure of the device is not the same.
  • each layer is not limited.
  • the organic body layer 501a of the base substrate 501 may be made of polyimide material, and the inorganic barrier layer 501b, buffer layer 5073, first insulating layer 5074, second insulating layer 5076, and third insulating layer 5078 of the base substrate 501 may be used.
  • Silicon nitride, silicon oxide, or a multilayer material of silicon nitride and silicon oxide can be used.
  • the planarization layer 5080, the support portion 5021d, the trace covering layer 2102, the pixel defining layer 505, and the spacer layer 506 are organic layers, for example, resin materials can be used.
  • the first metal layer 5075 and the second metal layer 5077 may be made of copper, lead, or copper-lead alloy materials.
  • the third metal layer 5079 may be a titanium aluminum titanium multilayer material or a molybdenum aluminum molybdenum multilayer material.
  • the thin film encapsulation layer 510 may use a multilayer material of an inorganic layer, an organic layer, and an inorganic layer. Among them, the buffer layer 5073, the first insulating layer 5074, the second insulating layer 5076, and the third insulating layer 5078 made of inorganic materials can be patterned by dry etching. The first metal layer 5075, the second metal layer 5077, the third metal layer 5079 and the partition wall prefabricated line 5021" can be patterned by dry etching.
  • the planarization layer 5080, the support portion 5021d, and the wiring are made of organic materials.
  • the cover layer 2102, the pixel defining layer 505, and the spacer layer 506 can be patterned by exposure and development of organic materials.
  • the anode 5041 of the organic light emitting device 504 and the aforementioned I-shaped structure of the partition wall 5021 can be etched by wet etching. And patterning. Regarding more material choices and process choices, I won't list them all here.
  • an embodiment of the present disclosure also provides an organic light-emitting display device, including the organic light-emitting display substrate 1 according to any one of the foregoing embodiments.
  • the structure of the display panel of the organic light-emitting display device includes the organic light-emitting display substrate 1 of any of the foregoing embodiments.
  • the display panel may also include a filter substrate, a polarizer, and other structures.
  • the organic light emitting display device may be a curved display device, a flexible display device or a stretchable display device.
  • the specific product type of the organic light emitting display device is not limited, for example, it can be a mobile phone, a tablet computer, a monitor, a television, a painting screen, an advertising screen, an electronic paper, a smart wearable, a car navigation, and so on.
  • an embodiment of the present disclosure also provides a method for manufacturing an organic light-emitting display substrate.
  • the organic light-emitting display substrate to be manufactured includes a display area and an opening area in the display area.
  • the method for manufacturing the organic light-emitting display substrate includes The following steps:
  • Step S1 forming a partition pattern layer on one side of the base substrate, the partition pattern layer includes a partition wall arranged around the opening area, and the partition wall includes a wall part and a shielding part located on the side of the wall body far away from the base substrate.
  • the orthographic projection of the wall portion on the base substrate covers the orthographic projection of the wall portion on the base substrate, and the orthographic projection area of the shielding portion on the base substrate is larger than the orthographic projection area of the wall portion on the base substrate;
  • Step S2 forming an organic vapor deposition layer on the side of the partition pattern layer away from the base substrate, and the organic vapor deposition layer is blocked by the partition wall and is discontinuous.
  • step S2 in the process of forming the organic vapor deposition layer by the vapor deposition process, the shielding part of the partition wall can effectively block the vapor deposition gas from forming a film on the wall surface of the partition wall, so that the organic vapor deposition layer is at the partition wall. Discontinuous. After the substrate is packaged using thin film packaging technology, since the organic vapor deposition layer is disconnected at the partition wall, this is equivalent to cutting off the channel for water and oxygen to enter the substrate from the opening area, thus improving the packaging performance of the organic light emitting display substrate , Extend the service life of the organic light-emitting display device.
  • the above manufacturing method can be used to manufacture the organic light emitting display substrate as shown in FIG. 2.
  • the above-mentioned manufacturing method is used to manufacture an organic light-emitting display substrate as shown in FIG. 3, and the display area of the organic light-emitting display substrate includes a plurality of island regions separated by opening regions, and is connected to the islands. In the bridge area between the areas, the island area has a pixel area and the bridge area has a wiring area.
  • step S1 includes:
  • the aforementioned partition walls are formed on one side of the base substrate, which are arranged around the opening area and are spaced apart from the pixel area and the wiring area on both sides.
  • the partition wall further includes a base part located on the side of the wall part close to the base substrate.
  • the base The part, the wall part and the shielding part form an I-shaped structure.
  • step S1 includes:
  • the prefabricated line of the partition wall is formed by dry etching on one side of the base substrate.
  • the prefabricated line of the partition wall includes a titanium layer, an aluminum layer and a titanium layer arranged in a direction away from the base substrate. Molybdenum layer, aluminum layer and molybdenum layer arranged in sequence in the direction of the base substrate;
  • the prefabricated line of the partition wall is wet-etched to form the aforementioned I-shaped structure of the partition wall.
  • the aforementioned I-shaped structure of the partition wall is formed in the wet etching process of the anode of the organic light emitting device in the pixel area.
  • FIG. 7 it is a schematic diagram of a manufacturing process of an organic light emitting display substrate according to an embodiment. As shown in Figure 7 and Figure 4, the production process includes the following steps:
  • Step S101 forming a base substrate on a glass substrate.
  • the organic bulk layer is formed on the glass substrate first, and then the inorganic barrier layer is formed on the surface of the organic bulk layer.
  • the organic bulk layer and the inorganic barrier layer serve as the base substrate of the organic light-emitting display substrate.
  • the glass substrate only plays a supporting role in the manufacturing process of the organic light-emitting display substrate. After the structure of the organic light-emitting display substrate is completed, the glass substrate and the base substrate need to be peeled off to support the flexible characteristics of the organic light-emitting display substrate.
  • Step S102 The buffer layer, the active layer of the thin film transistor, the first insulating layer, the first metal layer, the second insulating layer, the second metal layer, and the third insulating layer are sequentially formed on the side of the base substrate where the inorganic barrier layer is provided.
  • the gate electrode of the thin film transistor and the first plate of the capacitive device are included, and the second metal layer includes the second plate of the capacitive device.
  • the material selection and process selection of each layer can be referred to the description of the foregoing embodiment.
  • Step S103 etching the buffer layer, the first insulating layer, the second insulating layer and the third insulating layer around the bridge area, the opening area and the opening area until the inorganic barrier layer is exposed.
  • a dry etching process can be used for the etching of inorganic materials.
  • Step S104 etching the inorganic barrier layer in the opening area, for example, dry etching, until the organic bulk layer is exposed.
  • Step S105 Use the inorganic barrier layer as a mask to etch away the organic body layer in the opening area to form openings.
  • An oxygen plasma dry etching technique can be used to etch away the organic body layer in the opening area with the inorganic barrier layer as a mask.
  • Step S106 A third metal layer is formed on the side of the third insulating layer away from the base substrate, the third metal layer includes a thin film transistor formed on the side of the third insulating layer away from the base substrate and connected to the active layer through a via hole The source and drain of the device, traces formed on the side of the inorganic barrier layer away from the base substrate and located in the wiring area, and prefabricated partition walls formed on the side of the inorganic barrier layer away from the base substrate and arranged around the opening area line.
  • the third metal layer is patterned by dry etching, and the formed partition wall prefabricated line is a laminated structure of titanium-aluminum-titanium or molybdenum-aluminum-molybdenum material, and the aforementioned I-shaped structure has not yet been formed.
  • Step S107 A planarization layer is formed on the side of the third metal layer away from the base substrate.
  • the planarization layer includes a first part, a second part, and a third part spaced apart.
  • the first part covers the pixel area and has a drain electrode. Through holes, the second part covers the wiring area, and the third part only covers the surface of the prefabricated line of the partition wall away from the base substrate.
  • the planarization layer can be patterned by exposure and development.
  • Step S108 forming the anode of the organic light emitting device in the pixel area on the side of the planarization layer away from the base substrate, and the anode is connected to the drain of the thin film transistor device through the via hole.
  • the anode material usually uses high work function indium tin oxide material, or multi-layer materials of indium tin oxide, silver, and indium tin oxide, it is suitable for patterning by wet etching. Therefore, it can be used in the wet etching process of the anode.
  • the aforementioned I-shaped structure of the partition wall is simultaneously formed in the middle.
  • Step S109 Continue to complete the production of the pixel defining layer, the spacer layer, the functional layers of the organic light-emitting device, the cathode, etc. on the side of the planarization layer away from the base substrate.
  • some functional layers of the organic light emitting device such as hole injection layer, electron injection layer, hole transport layer, electron transport layer, electron blocking layer, and hole blocking layer, can be formed by a non-patterned evaporation process.
  • Step S110 the island structure and the bridge structure are packaged as a whole, and the glass substrate is peeled off.
  • the organic vapor deposition layer and the encapsulation layer in the opening area are taken away at the same time to form a through hole.
  • the non-patterned functional layer of the organic light-emitting device is disconnected at the partition wall, which is equivalent to cutting off the water and oxygen from the open area into the inside of the substrate. Therefore, the packaging performance of the organic light emitting display substrate is improved, and the service life of the organic light emitting display device is prolonged.

Abstract

一种有机发光显示基板及其制作方法、有机发光显示装置。有机发光显示基板包括显示区（100）和位于显示区（100）的开孔区（30），显示区（100）的结构包括：衬底基板（501）；隔断图案层（502），位于衬底基板（501）的一侧，包括绕开孔区（30）设置的隔断墙（5021），隔断墙（5021）包括墙体部（5021a）以及位于墙体部（5021a）远离衬底基板（501）一侧的遮挡部（5021b），遮挡部（5021b）在衬底基板（501）上的正投影覆盖墙体部（5021a）在衬底基板（501）上的正投影，且遮挡部（5021b）在衬底基板（501）上的正投影面积大于墙体部（5021a）在衬底基板（501）上的正投影面积；有机蒸镀层（503），位于隔断图案层（502）远离衬底基板（501）的一侧，有机蒸镀层（503）被隔断墙（5021）阻断而不连续。

Description

有机发光显示基板及其制作方法、有机发光显示装置 技术领域
本公开涉及显示技术领域，尤其涉及一种有机发光显示基板及其制作方法、有机发光显示装置。
背景技术
有机发光显示装置由于其轻薄、可弯曲、功耗低、色域广、对比度高等优点，被列为极具发展前景的下一代显示技术。有机发光显示装置的显示基板在制作时，通常采用薄膜封装技术对有机发光器件进行封装，以防止水氧进入并最终导致OLED器件失效。
如何提高有机发光显示基板的封装性能，延长有机发光显示装置的使用寿命，一直是本领域技术人员亟待解决的技术问题。
发明内容
根据本公开实施例的一方面，提供一种有机发光显示基板，包括显示区和位于显示区的开孔区，显示区的结构包括：
衬底基板；
隔断图案层，位于衬底基板的一侧，包括绕开孔区设置的隔断墙，隔断墙包括墙体部以及位于墙体部远离衬底基板一侧的遮挡部，遮挡部在衬底基板上的正投影覆盖墙体部在衬底基板上的正投影，且遮挡部在衬底基板上的正投影面积大于墙体部在衬底基板上的正投影面积；
有机蒸镀层，位于隔断图案层远离衬底基板的一侧，有机蒸镀层被隔断墙阻断而不连续。
在一些实施例中，显示区包括被开孔区间隔的多个岛区，以及连接于岛区之间的桥区，岛区设有像素区，桥区设有走线区，隔断墙两侧分别与像素区和走线区相间隔。
在一些实施例中，隔断墙还包括位于墙体部靠近衬底基板一侧的底座部，在隔断墙的经过开孔区中心且垂直于衬底基板的截面中，底座部、墙体部和遮挡部形成工字型结构。
在一些实施例中，底座部材料为钛，墙体部材料为铝，遮挡部材料为钛；或者， 底座部材料为钼，墙体部材料为铝，遮挡部材料为钼。
在一些实施例中，隔断墙还包括与遮挡部的远离墙体部的表面连接的支撑部。
在一些实施例中，衬底基板为柔性基板，衬底基板包括层叠设置的有机本体层和无机阻挡层，隔断图案层形成于无机阻挡层的远离有机本体层的表面。
在一些实施例中，有机蒸镀层为非图案化的有机蒸镀层。
在一些实施例中，像素区设有有机发光器件，有机蒸镀层包括有机发光器件的非图案化的功能层。
在一些实施例中，像素区还设有像素电路，像素电路位于有机发光器件靠近衬底基板的一侧，像素电路包括薄膜晶体管器件和电容器件，像素电路的结构包括：
沿远离衬底基板方向依次设置的缓冲层、薄膜晶体管器件的有源层、第一绝缘层、第一金属层、第二绝缘层、第二金属层、第三绝缘层、第三金属层和平坦化层，其中，第一金属层包括薄膜晶体管器件的栅极和电容器件的第一极板，第二金属层包括电容器件的第二极板，第三金属层包括通过过孔与有源层连接的源极和漏极。
在一些实施例中，走线区设有走线和位于走线远离衬底基板一侧的走线覆盖层。
根据本公开实施例的另一方面，提供一种有机发光显示装置，包括前述任一技术方案所述的有机发光显示基板。
根据本公开实施例的又一方面，提供一种有机发光显示基板的制作方法，有机发光显示基板包括显示区和位于显示区的开孔区，所述制作方法包括：
在衬底基板的一侧形成隔断图案层，隔断图案层包括绕开孔区设置的隔断墙，隔断墙包括墙体部以及位于墙体部远离衬底基板一侧的遮挡部，遮挡部在衬底基板上的正投影覆盖墙体部在衬底基板上的正投影，且遮挡部在衬底基板上的正投影面积大于墙体部在衬底基板上的正投影面积；
在隔断图案层远离衬底基板的一侧形成有机蒸镀层，有机蒸镀层被隔断墙阻断而不连续。
在一些实施例中，显示区包括被开孔区间隔的多个岛区，以及连接于岛区之间的桥区，岛区设有像素区，桥区设有走线区；所述在衬底基板的一侧形成隔断图案层，包括：
在衬底基板的一侧形成绕开孔区设置且两侧分别与像素区和走线区相间隔的所述隔断墙。
在一些实施例中，隔断墙还包括位于墙体部靠近衬底基板一侧的底座部，在隔断墙的经过开孔区中心且垂直于衬底基板的截面中，底座部、墙体部和遮挡部形成工字型结构；所述在衬底基板的一侧形成隔断图案层，包括：
在衬底基板的一侧通过干法刻蚀形成隔断墙预制线，隔断墙预制线包括沿远离衬底基板方向依次设置的钛层、铝层和钛层，或者，隔断墙预制线包括沿远离衬底基板方向依次设置的钼层、铝层和钼层；
对隔断墙预制线进行湿法刻蚀，形成隔断墙的所述工字型结构。
在一些实施例中，像素区设有有机发光器件，隔断墙的所述工字型结构在有机发光器件的阳极的湿法刻蚀工艺中形成。
在一些实施例中，在形成隔断墙的所述工字型结构和有机发光器件的阳极之前，所述制作方法包括：
在有机本体层的表面形成无机阻挡层，以形成衬底基板；
在衬底基板的设有无机阻挡层的一侧依次形成缓冲层、薄膜晶体管的有源层、第一绝缘层、第一金属层、第二绝缘层、第二金属层和第三绝缘层，其中，缓冲层、第一绝缘层、第二绝缘层和第三绝缘层遍布岛区和桥区，有源层、第一金属层和第二金属层位于像素区，第一金属层包括薄膜晶体管的栅极和电容器件的第一极板，第二金属层包括电容器件的第二极板；
对桥区、开孔区和开孔区周边的缓冲层、第一绝缘层、第二绝缘层和第三绝缘层进行刻蚀，直至曝露出无机阻挡层；
对开孔区的无机阻挡层进行刻蚀，直至曝露出有机本体层；
以无机阻挡层为掩模刻蚀掉开孔区的有机本体层，以形成开孔；
在第三绝缘层远离衬底基板的一侧形成第三金属层，第三金属层包括形成于第三绝缘层远离衬底基板的一面并通过过孔与有源层连接的薄膜晶体管器件的源极和漏极、形成于无机阻挡层远离衬底基板的一面且位于走线区的走线，以及形成于无机阻挡层远离衬底基板的一面且绕开孔区设置的隔断墙预制线；
在第三金属层远离衬底基板的一侧形成平坦化层，平坦化层包括相间隔的第一部分、第二部分和第三部分，第一部分覆盖像素区且具有通向漏极的过孔，第二部分覆盖走线区，第三部分仅覆盖隔断墙预制线远离衬底基板的表面。
附图说明
构成说明书的一部分的附图描述了本公开的实施例，并且连同说明书一起用于解释本公开的原理。
参照附图，根据下面的详细描述，可以更加清楚地理解本公开，其中：
图1是一种相关技术的有机发光显示基板的主视图；
图2是本公开一实施例有机发光显示基板的主视图及局部截面示意图；
图3是蒸镀成膜示意图；
图4是本公开另一实施例有机发光显示基板的局部截面示意图；
图5是本公开一实施例有机发光显示装置在弯曲状态示意图；
图6是本公开一实施例有机发光显示基板的制作方法流程图；
图7是本公开一实施例有机发光显示基板的制作过程示意图。
应当明白，附图中所示出的各个部分的尺寸并不必然是按照实际的比例关系绘制的。此外，相同或类似的参考标号表示相同或类似的构件。
具体实施方式
现在将参照附图来详细描述本公开的各种示例性实施例。对示例性实施例的描述仅仅是说明性的，决不作为对本公开及其应用或使用的任何限制。本公开可以以许多不同的形式实现，不限于这里所述的实施例。提供这些实施例是为了使本公开透彻且完整，并且向本领域技术人员充分表达本公开的范围。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、材料的组分、数字表达式和数值应被解释为仅仅是示例性的，而不是作为限制。
本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的部分。“包括”或者“包含”等类似的词语意指在该词前的要素涵盖在该词后列举的要素，并不排除也涵盖其他要素的可能。“上”、“下”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
在本公开中，当描述到特定部件位于第一部件和第二部件之间时，在该特定部件与第一部件或第二部件之间可以存在居间部件，也可以不存在居间部件。当描述到特定部件连接其它部件时，该特定部件可以与所述其它部件直接连接而不具有居间部件，也可以不与所述其它部件直接连接而具有居间部件。
本公开使用的所有术语(包括技术术语或者科学术语)与本公开所属领域的普通 技术人员理解的含义相同，除非另外特别定义。还应当理解，在诸如通用字典中定义的术语应当被解释为具有与它们在相关技术的上下文中的含义相一致的含义，而不应用理想化或极度形式化的意义来解释，除非这里明确地这样定义。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为说明书的一部分。
如图1所示，相关技术的一种有机发光显示基板1’，包括被开孔区30’间隔的多个岛区10’，以及连接于岛区10’之间的桥区20’，岛区10’设有有机发光器件504’，桥区20’设有走线(图中未予示出)。该有机发光显示基板1’采用柔性基板作为衬底，辅以开孔设计，从而可以实现曲面显示、柔性显示甚至拉伸显示。
空气中的水氧是影响有机发光显示基板寿命的主要因素，因此，一般采用薄膜封装(Thin Film Encapsulation，TFE)技术对有机发光器件及其相关像素电路和走线结构进行封装保护，以防止水氧进入。有机发光显示基板的结构中，有机层的水氧透过率远高于无机层，而相关技术的开孔设计提供了水氧从有机层进入的通道。因此，如何防止水氧进入有机发光显示基板内部，提高有机发光显示基板的封装性能，延长有机发光显示装置的使用寿命，是本领域技术人员亟待解决的技术问题。
为解决上述技术问题，本公开实施例提供了一种有机发光显示基板及其制作方法、有机发光显示装置。
如图2所示，本公开一实施例提供的有机发光显示基板1，包括显示区100和位于显示区100的开孔区30，显示区100的结构包括：
衬底基板501；
隔断图案层502，位于衬底基板501的一侧，包括绕开孔区30设置的隔断墙5021，隔断墙5021包括墙体部5021a以及位于墙体部5021a远离衬底基板501一侧的遮挡部5021b，遮挡部5021b在衬底基板501上的正投影覆盖墙体部5021a在衬底基板501上的正投影，且遮挡部5021b在衬底基板501上的正投影面积大于墙体部5021a在衬底基板501上的正投影面积；
有机蒸镀层503，位于隔断图案层502远离衬底基板501的一侧，有机蒸镀层503被隔断墙5021阻断而不连续。
在本公开实施例中，衬底基板501可以为柔性基板或者硬质基板，其具体类型不 限。隔断图案层502可以只包括一个绕开孔区30设置的隔断墙5021。当显示区设置有多个开孔区时，隔断图案层也可以包括多个隔断墙，分别绕不同的开孔区设置。在图2所示的实施例中，开孔区30可以用于容置摄像头或者传感器等功能器件，隔断图案层502包括一个隔断墙5021。为实现对基板内部结构的封装保护，有机发光显示基板1的结构还包括了薄膜封装层510。
有机发光显示基板的制作中，会多次用到蒸镀工艺，其是指：在一定的真空条件下加热蒸镀材料，使蒸镀材料熔化或升华为原子、分子或原子团组成的蒸气，然后凝结在衬底表面成膜。如图3所示，蒸镀过程中，蒸镀材料基本是沿衬底的法线方向成膜。因此，本公开中的有机蒸镀层503是采用蒸镀工艺形成的有机层，例如，有机蒸镀层503可以为有机发光器件的采用有机材料的功能层，如空穴注入层、电子注入层、空穴传输层、电子传输层、电子阻挡层、空穴阻挡层或发光层等等。
相关技术中，开孔设计提供了水氧由开孔区通过有机层进入有机发光器件的可能，有机发光器件失效时有发生。
而本公开实施例的有机发光显示基板在制作时，先形成隔断图案层再形成有机蒸镀层。同前所述，由于蒸镀气体基本是沿衬底的法线方向成膜，因此，隔断墙的遮挡部可以有效地阻挡蒸镀气体在隔断墙的墙体部的壁面成膜，从而将两侧的有机蒸镀层断开，使之不连续。在采用薄膜封装技术对基板进行封装后，由于有机蒸镀层在隔断墙处被断开，这相当于切断了水氧从开孔区进入有机发光显示基板内部的通道，因此，提高了有机发光显示基板的封装性能，延长了有机发光显示装置的使用寿命。
如图4所示，本公开另一实施例提供的有机发光显示基板1，其采用了与相关技术类似的开孔设计，在显示区包括被开孔区30间隔的多个岛区10，以及连接于岛区10之间的桥区20(图中仅示意了局部结构)，岛区10设有像素区110，桥区20设有走线区210，隔断图案层502的隔断墙5021设于岛区10和桥区20并绕开孔区30设置，并且，隔断墙5021两侧分别与像素区110和走线区210相间隔。
该实施例的有机发光显示基板1，采用衬底基板501辅以开孔设计，可以实现曲面显示、柔性显示甚至拉伸显示。有机发光显示基板1的岛区10、桥区20和开孔区30的具体图案样式不限。
如图4所示，在本公开的该实施例中，有机发光显示基板1的像素区110设置一个或多个有机发光器件504，走线区210设有走线2101，以为岛区10提供信号传输的通道。有机发光显示基板1可以为图4实施例所示的有源矩阵有机发光显示基板，在 其它实施例中，有机发光显示基板也可以为无源矩阵有机发光显示基板。其中，如图4所示，有源矩阵有机发光显示基板在像素区110还设有像素电路507，每个机发光器件504受像素电路507的控制，从而可以实现连续且独立的发光。为对有机发光显示基板1的有机发光器件504及其像素电路507和走线2101进行封装保护，如图4所示，有机发光显示基板1的结构还包括将岛区10的结构和桥区20的结构一体封装的薄膜封装层510。
在本公开实施例中，隔断墙的截面结构可以成T型、工字型或倒L型等等。需要说明的是，在本公开各实施例中，隔断墙的截面是指隔断墙的经过开孔区中心且垂直于衬底基板的截面。
在本公开的一些实施例中，如图4所示，隔断墙5021除墙体部5021a和遮挡部5021b外，还包括位于墙体部5021a靠近衬底基板501一侧的底座部5021c，在隔断墙5021的截面中，底座部5021c、墙体部5021a和遮挡部5021b形成工字型结构。其中，底座部5021c材料为钛，墙体部5021a材料为铝，遮挡部5021b材料为钛；或者，底座部5021c材料为钼，墙体部5021a材料为铝，遮挡部5021b材料为钼。在湿法刻蚀过程中，由于铝的刻蚀速率大于钛或钼的刻蚀速率，因此，对钛铝钛或钼铝钼这种“三明治”结构的多层结构进行湿法刻蚀，便可以形成隔断墙5021的前述工字型结构，工艺简便，成本较低。参见图7的步骤S106和步骤S108，在一个实施例中，可以先通过干法刻蚀工艺形成钛铝钛或钼铝钼材料的隔断墙预制线5021”，然后，再通过一次湿法刻蚀工艺形成隔断墙5021的前述工字型结构。隔断墙5021的前述工字型结构可以单独通过一次湿法刻蚀工艺形成，也可以在其它结构层的湿法刻蚀工艺中同步形成。
在本公开一些实施例中，如图4所示，隔断墙5021还包括与遮挡部5021b的远离墙体部5021a的表面连接的支撑部5021d。支撑部5021d可以支撑遮挡部5021b，防止遮挡部5021b向衬底基板501一侧坍落。该支撑部5021d可以单独通过一次图案化工艺形成，也可以在相同材料的其它层结构的图案化工艺中同步形成。参见图7的步骤S107，在一个实施例中，支撑部5021d采用有机材料，在有机发光显示基板的平坦化层5080的图案化工艺中同步形成。由于支撑部5021d呈图案化，仅覆盖前述工字型结构的遮挡部5021b，并未延展至开孔断面，因此，不会影响到有机发光显示基板1的封装性能。
在本公开一个实施例中，衬底基板501为柔性基板，如图4所示，衬底基板501包括层叠设置的有机本体层501a和无机阻挡层501b，隔断图案层502形成于无机阻 挡层501b的远离有机本体层501a的表面，即隔断墙5021与无机阻挡层501b连接。无机阻挡层501b采用无机材料，可以与隔断墙5021的金属材料更为致密的结合，而且，无机材料的水氧透过率远低于有机材料，因此，可以有效阻止水氧进入。此外，无机阻挡层501b还能够防止有机本体层501a中的杂质粒子进入薄膜晶体管器件5071的有源层5071a的沟道区进而影响到器件特性。
如图4所示，在本公开一些实施例中，有机蒸镀层503为非图案化的有机蒸镀层。这里，非图案化的有机蒸镀层，是指不需要通过图案化工艺形成的有机蒸镀层，其制作过程中不需要使用掩模板。非图案化的有机蒸镀层503例如为有机发光器件504的空穴注入层、电子注入层、空穴传输层、电子传输层、电子阻挡层或空穴阻挡层等等。值得一提的是，在本公开的一些实施例中，有机蒸镀层503也可以为图案化并且在开孔区30周围也成膜的有机蒸镀层，由于隔断墙5021的阻断作用，有机蒸镀层503在隔断墙5021处不连续，因此仍能切断水氧的进入。
如图4所示，在本公开的一个实施例中，像素区110除有机发光器件504外还设有像素电路507，像素电路507位于有机发光器件504靠近衬底基板501的一侧，像素电路507包括薄膜晶体管器件5071和电容器件5072。像素电路507的结构包括：沿远离衬底基板501方向依次设置的缓冲层5073、薄膜晶体管器件5071的有源层5071a、第一绝缘层5074、第一金属层5075、第二绝缘层5076、第二金属层5077、第三绝缘层5078、第三金属层5079和平坦化层5080，其中，第一金属层5075包括薄膜晶体管器件5071的栅极5071b和电容器件5072的第一极板5072a，第二金属层5077包括电容器件5072的第二极板5072b，第三金属层5078包括通过过孔与有源层5071a连接的源极5071c和漏极5071d。走线区210除走线2101外，还在走线2101远离衬底基板501一侧设有走线覆盖层2102。
像素区110的有机发光器件504的结构包括：位于平坦化层5080远离衬底基板501一侧并沿远离衬底基板501方向依次设置的阳极5041、多个有机材料的功能层5042和阴极5043。平坦化层5080远离衬底基板501一侧还设有像素界定层505。各有机发光器件504的阳极5041通过像素界定层505间隔，各有机发光器件504的阴极5043或一些有机发光器件504的阴极5043可以连为一体从而具有等电势。该实施例中，有机发光器件504的发光层，需要使用掩模板通过图案化蒸镀工艺形成，为在蒸镀过程中支撑掩模板，如图中所示，还在像素界定层505远离衬底基板501的一侧设置了隔垫物层506。
该实施例中，薄膜晶体管器件5071为低温多晶硅(LTPS)型薄膜晶体管器件，其电子迀移率可以达到200cm 2/V*sec以上，可以有效减小薄膜晶体管器件的面积，从而有利于提高像素开口率，降低功耗。值得一提的是，薄膜晶体管器件并不局限于低温多晶硅型薄膜晶体管器件，还可以为半导体氧化物薄膜晶体管器件、非晶硅薄膜晶体管器件或微晶硅薄膜晶体管器件等等，不同类型薄膜晶体管器件的结构不尽相同。
在本公开实施例中，各层具体材料类型不限。例如，衬底基板501的有机本体层501a可以采用聚酰亚胺材料，衬底基板501的无机阻挡层501b、缓冲层5073、第一绝缘层5074、第二绝缘层5076和第三绝缘层5078可以采用氮化硅、氧化硅，或氮化硅和氧化硅的多层材料。平坦化层5080、支撑部5021d、走线覆盖层2102、像素界定层505和隔垫物层506为有机层，例如可以采用树脂材料。第一金属层5075和第二金属层5077可以采用铜、铅或铜铅合金材料。第三金属层5079可以采用钛铝钛多层材料或钼铝钼多层材料。薄膜封装层510可以采用无机层、有机层和无机层的多层材料。其中，采用无机材料的缓冲层5073、第一绝缘层5074、第二绝缘层5076和第三绝缘层5078等可以通过干法刻蚀而图案化。第一金属层5075、第二金属层5077、第三金属层5079和隔断墙预制线5021”等可以通过干法刻蚀而图案化。采用有机材料的平坦化层5080、支撑部5021d、走线覆盖层2102、像素界定层505和隔垫物层506等可以通过有机材料的曝光、显影而图案化。有机发光器件504的阳极5041和隔断墙5021的前述工字型结构可以通过湿法刻蚀而图案化。关于更多的材料选择和工艺选择，这里不再一一列举。
如图5所示，本公开实施例还提供了一种有机发光显示装置，包括根据前述任一实施例的有机发光显示基板1。在一些实施例中，有机发光显示装置的显示面板的结构包括了前述任一实施例的有机发光显示基板1，显示面板除有机发光显示基板1外，还可以包括滤光基板以及偏光片等结构。该有机发光显示装置可以为曲面显示装置、柔性显示装置或可拉伸显示装置。有机发光显示装置的具体产品类型不限，例如，可以为手机、平板电脑、显示器、电视机、画屏、广告屏、电子纸、智能穿戴、车载导航，等等。
如图6所示，本公开实施例还提供一种有机发光显示基板的制作方法，所要制作的有机发光显示基板包括显示区和位于显示区的开孔区，该有机发光显示基板的制作方法包括以下步骤：
步骤S1：在衬底基板的一侧形成隔断图案层，隔断图案层包括绕开孔区设置的隔断墙，隔断墙包括墙体部以及位于墙体部远离衬底基板一侧的遮挡部，遮挡部在衬底基板上的正投影覆盖墙体部在衬底基板上的正投影，且遮挡部在衬底基板上的正投影面积大于墙体部在衬底基板上的正投影面积；
步骤S2：在隔断图案层远离衬底基板的一侧形成有机蒸镀层，有机蒸镀层被隔断墙阻断而不连续。
步骤S2中，在采用蒸镀工艺形成有机蒸镀层的过程中，隔断墙的遮挡部可以有效地阻挡蒸镀气体在隔断墙的墙体部的壁面成膜，从而使有机蒸镀层在隔断墙处不连续。在采用薄膜封装技术对基板封装后，由于有机蒸镀层在隔断墙处被断开，这相当于切断了水氧从开孔区进入基板内部的通道，因此，提高了机发光显示基板的封装性能，延长了有机发光显示装置的使用寿命。
上述制作方法可以用于制作如图2所示的有机发光显示基板。
在本公开的一个实施例中，上述制作方法用于制作如图3所示的有机发光显示基板，该有机发光显示基板的显示区包括被开孔区间隔的多个岛区，以及连接于岛区之间的桥区，岛区设有像素区，桥区设有走线区。该实施例有机发光显示基板的制作方法中，步骤S1包括：
在衬底基板的一侧形成绕开孔区设置且两侧分别与像素区和走线区相间隔的前述隔断墙。
在本公开图3所示的实施例中，隔断墙还包括位于墙体部靠近衬底基板一侧的底座部，在隔断墙的经过开孔区中心且垂直于衬底基板的截面中，底座部、墙体部和遮挡部形成工字型结构。该实施例中，步骤S1包括：
在衬底基板的一侧通过干法刻蚀形成隔断墙预制线，隔断墙预制线包括沿远离衬底基板方向依次设置的钛层、铝层和钛层，或者，隔断墙预制线包括沿远离衬底基板方向依次设置的钼层、铝层和钼层；
对隔断墙预制线进行湿法刻蚀，形成隔断墙的前述工字型结构。
在本公开的一个实施例中，隔断墙的前述工字型结构是在像素区的有机发光器件的阳极的湿法刻蚀工艺中形成。
如图7所示，为一个实施例有机发光显示基板的制作过程示意图。请结合图7和图4所示，该制作过程包括以下步骤：
步骤S101：在玻璃基板上形成衬底基板。例如，先在玻璃基板上形成有机本体层， 再在有机本体层的表面形成无机阻挡层。有机本体层和无机阻挡层作为有机发光显示基板的衬底基板。玻璃基板仅在有机发光显示基板制作工艺中起支撑作用，待有机发光显示基板的结构制作完毕，还需要将玻璃基板与衬底基板剥离，以支持有机发光显示基板的柔性特性。
步骤S102：在衬底基板的设有无机阻挡层的一侧依次形成缓冲层、薄膜晶体管的有源层、第一绝缘层、第一金属层、第二绝缘层、第二金属层和第三绝缘层，其中，缓冲层、第一绝缘层、第二绝缘层和第三绝缘层遍布岛区和桥区，有源层、第一金属层和第二金属层位于像素区，第一金属层包括薄膜晶体管的栅极和电容器件的第一极板，第二金属层包括电容器件的第二极板。该步骤中，各层材料选择和工艺选择，可以参考前述实施例描述。
步骤S103：对桥区、开孔区和开孔区周边的缓冲层、第一绝缘层、第二绝缘层和第三绝缘层进行刻蚀，直至曝露出无机阻挡层。对无机材料的刻蚀可以采用干法刻蚀工艺。
步骤S104：对开孔区的无机阻挡层进行刻蚀，例如，进行干法刻蚀，直至曝露出有机本体层。
步骤S105：以无机阻挡层为掩模刻蚀掉开孔区的有机本体层，以形成开孔。可以采用氧等离子体干法刻蚀技术，以无机阻挡层为掩模，刻蚀掉开孔区的有机本体层。
步骤S106：在第三绝缘层远离衬底基板的一侧形成第三金属层，第三金属层包括形成于第三绝缘层远离衬底基板的一面并通过过孔与有源层连接的薄膜晶体管器件的源极和漏极、形成于无机阻挡层远离衬底基板的一面且位于走线区的走线，以及形成于无机阻挡层远离衬底基板的一面且绕开孔区设置的隔断墙预制线。第三金属层采用干法刻蚀形成图案，所形成的隔断墙预制线为钛铝钛或钼铝钼材料的叠层结构，尚未形成前述的工字型结构。
步骤S107：在第三金属层远离衬底基板的一侧形成平坦化层，平坦化层包括相间隔的第一部分、第二部分和第三部分，第一部分覆盖像素区且具有通向漏极的过孔，第二部分覆盖走线区，第三部分仅覆盖隔断墙预制线远离衬底基板的表面。平坦化层可以通过曝光、显影的方式形成图案。
步骤S108：在平坦化层远离衬底基板的一侧形成位于像素区的有机发光器件的阳极，阳极通过过孔与薄膜晶体管器件的漏极连接。由于阳极材料通常采用高功函数的氧化铟锡材料，或者氧化铟锡、银、氧化铟锡的多层材料，适宜采用湿法刻蚀而图案 化，因此，可以在阳极的湿法刻蚀工艺中同步形成隔断墙的前述工字型结构。
步骤S109：在平坦化层远离衬底基板的一侧继续完成像素界定层、隔垫物层、有机发光器件的各功能层以及阴极等的制作。其中，有机发光器件的一些功能层，如空穴注入层、电子注入层、空穴传输层、电子传输层、电子阻挡层和空穴阻挡层等，可以通过非图案化蒸镀工艺形成。
步骤S110：对岛区结构和桥区结构进行整体封装，并剥离掉玻璃基板。玻璃基板在剥离时同时带走开孔区的有机蒸镀层和封装层，以形成通孔。
在采用薄膜封装技术对岛区结构和桥区结构一体封装后，有机发光器件的非图案化的功能层在隔断墙处被断开，这相当于切断了水氧从开孔区进入基板内部的通道，因此，提高了机发光显示基板的封装性能，延长了有机发光显示装置的使用寿命。
至此，已经详细描述了本公开的各实施例。为了避免遮蔽本公开的构思，没有描述本领域所公知的一些细节。本领域技术人员根据上面的描述，完全可以明白如何实施这里公开的技术方案。
虽然已经通过示例对本公开的一些特定实施例进行了详细说明，但是本领域的技术人员应该理解，以上示例仅是为了进行说明，而不是为了限制本公开的范围。本领域的技术人员应该理解，可在不脱离本公开的范围和精神的情况下，对以上实施例进行修改或者对部分技术特征进行等同替换。本公开的范围由所附权利要求来限定。

Claims (16)

  1. 一种有机发光显示基板，包括显示区和位于显示区的开孔区，显示区的结构包括：
    衬底基板；
    隔断图案层，位于衬底基板的一侧，包括绕开孔区设置的隔断墙，隔断墙包括墙体部以及位于墙体部远离衬底基板一侧的遮挡部，遮挡部在衬底基板上的正投影覆盖墙体部在衬底基板上的正投影，且遮挡部在衬底基板上的正投影面积大于墙体部在衬底基板上的正投影面积；
    有机蒸镀层，位于隔断图案层远离衬底基板的一侧，有机蒸镀层被隔断墙阻断而不连续。
  2. 根据权利要求1所述的有机发光显示基板，其中，显示区包括被开孔区间隔的多个岛区，以及连接于岛区之间的桥区，岛区设有像素区，桥区设有走线区，隔断墙两侧分别与像素区和走线区相间隔。
  3. 根据权利要求1或2所述的有机发光显示基板，其中，隔断墙还包括位于墙体部靠近衬底基板一侧的底座部，在隔断墙的经过开孔区中心且垂直于衬底基板的截面中，底座部、墙体部和遮挡部形成工字型结构。
  4. 根据权利要求3所述的有机发光显示基板，其中，底座部材料为钛，墙体部材料为铝，遮挡部材料为钛；或者，底座部材料为钼，墙体部材料为铝，遮挡部材料为钼。
  5. 根据权利要求1或2所述的有机发光显示基板，其中，隔断墙还包括与遮挡部的远离墙体部的表面连接的支撑部。
  6. 根据权利要求1或2所述的有机发光显示基板，其中，衬底基板为柔性基板，衬底基板包括层叠设置的有机本体层和无机阻挡层，隔断图案层形成于无机阻挡层的远离有机本体层的表面。
  7. 根据权利要求1或2所述的有机发光显示基板，其中，有机蒸镀层为非图案化的有机蒸镀层。
  8. 根据权利要求2所述的有机发光显示基板，其中，像素区设有有机发光器件，有机蒸镀层包括有机发光器件的非图案化的功能层。
  9. 根据权利要求8所述的有机发光显示基板，其中，像素区还设有像素电路，像素电路位于有机发光器件靠近衬底基板的一侧，像素电路包括薄膜晶体管器件和电容器件，像素电路的结构包括：
    沿远离衬底基板方向依次设置的缓冲层、薄膜晶体管器件的有源层、第一绝缘层、第一金属层、第二绝缘层、第二金属层、第三绝缘层、第三金属层和平坦化层，其中，第一金属层包括薄膜晶体管器件的栅极和电容器件的第一极板，第二金属层包括电容器件的第二极板，第三金属层包括通过过孔与有源层连接的源极和漏极。
  10. 根据权利要求8或9所述的有机发光显示基板，其中，走线区设有走线和位于走线远离衬底基板一侧的走线覆盖层。
  11. 一种有机发光显示装置，包括根据权利要求1-10任一项所述的有机发光显示基板。
  12. 一种有机发光显示基板的制作方法，有机发光显示基板包括显示区和位于显示区的开孔区，所述制作方法包括：
    在衬底基板的一侧形成隔断图案层，隔断图案层包括绕开孔区设置的隔断墙，隔断墙包括墙体部以及位于墙体部远离衬底基板一侧的遮挡部，遮挡部在衬底基板上的正投影覆盖墙体部在衬底基板上的正投影，且遮挡部在衬底基板上的正投影面积大于墙体部在衬底基板上的正投影面积；
    在隔断图案层远离衬底基板的一侧形成有机蒸镀层，有机蒸镀层被隔断墙阻断而不连续。
  13. 根据权利要求12所述的制作方法，其中，显示区包括被开孔区间隔的多个 岛区，以及连接于岛区之间的桥区，岛区设有像素区，桥区设有走线区；所述在衬底基板的一侧形成隔断图案层，包括：
    在衬底基板的一侧形成绕开孔区设置且两侧分别与像素区和走线区相间隔的所述隔断墙。
  14. 根据权利要求13所述的制作方法，其中，隔断墙还包括位于墙体部靠近衬底基板一侧的底座部，在隔断墙的经过开孔区中心且垂直于衬底基板的截面中，底座部、墙体部和遮挡部形成工字型结构；所述在衬底基板的一侧形成隔断图案层，包括：
    在衬底基板的一侧通过干法刻蚀形成隔断墙预制线，隔断墙预制线包括沿远离衬底基板方向依次设置的钛层、铝层和钛层，或者，隔断墙预制线包括沿远离衬底基板方向依次设置的钼层、铝层和钼层；
    对隔断墙预制线进行湿法刻蚀，形成隔断墙的所述工字型结构。
  15. 根据权利要求14所述的制作方法，其中，像素区设有有机发光器件，隔断墙的所述工字型结构在有机发光器件的阳极的湿法刻蚀工艺中形成。
  16. 根据权利要求15所述的制作方法，其中，在形成隔断墙的所述工字型结构和有机发光器件的阳极之前，所述制作方法包括：
    在有机本体层的表面形成无机阻挡层，以形成衬底基板；
    在衬底基板的设有无机阻挡层的一侧依次形成缓冲层、薄膜晶体管的有源层、第一绝缘层、第一金属层、第二绝缘层、第二金属层和第三绝缘层，其中，缓冲层、第一绝缘层、第二绝缘层和第三绝缘层遍布岛区和桥区，有源层、第一金属层和第二金属层位于像素区，第一金属层包括薄膜晶体管的栅极和电容器件的第一极板，第二金属层包括电容器件的第二极板；
    对桥区、开孔区和开孔区周边的缓冲层、第一绝缘层、第二绝缘层和第三绝缘层进行刻蚀，直至曝露出无机阻挡层；
    对开孔区的无机阻挡层进行刻蚀，直至曝露出有机本体层；
    以无机阻挡层为掩模刻蚀掉开孔区的有机本体层，以形成开孔；
    在第三绝缘层远离衬底基板的一侧形成第三金属层，第三金属层包括形成于第三绝缘层远离衬底基板的一面并通过过孔与有源层连接的薄膜晶体管器件的源极和漏 极、形成于无机阻挡层远离衬底基板的一面且位于走线区的走线，以及形成于无机阻挡层远离衬底基板的一面且绕开孔区设置的隔断墙预制线；
    在第三金属层远离衬底基板的一侧形成平坦化层，平坦化层包括相间隔的第一部分、第二部分和第三部分，第一部分覆盖像素区且具有通向漏极的过孔，第二部分覆盖走线区，第三部分仅覆盖隔断墙预制线远离衬底基板的表面。
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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210086343A (ko) * 2019-12-31 2021-07-08 엘지디스플레이 주식회사 기판 홀을 포함하는 디스플레이 장치
CN113078270A (zh) * 2020-01-06 2021-07-06 京东方科技集团股份有限公司 有机电致发光结构及其制作方法、显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040090178A1 (en) * 2002-11-12 2004-05-13 Feng-Ju Chuang Organic electro-luminescent device
CN109920803A (zh) * 2019-03-25 2019-06-21 京东方科技集团股份有限公司 一种可拉伸显示基板及显示装置
CN109935621A (zh) * 2019-03-29 2019-06-25 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
CN109935730A (zh) * 2019-03-28 2019-06-25 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
CN110246984A (zh) * 2019-06-21 2019-09-17 京东方科技集团股份有限公司 一种显示面板、显示装置和显示面板的制作方法
CN110265583A (zh) * 2019-07-26 2019-09-20 京东方科技集团股份有限公司 一种显示面板及其制备方法、显示装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6956240B2 (en) * 2001-10-30 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
KR100659532B1 (ko) * 2003-11-28 2006-12-19 삼성에스디아이 주식회사 평판표시장치 및 그의 제조방법
KR20160076688A (ko) * 2014-12-23 2016-07-01 엘지디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법
US10205122B2 (en) * 2015-11-20 2019-02-12 Samsung Display Co., Ltd. Organic light-emitting display and method of manufacturing the same
KR20180045968A (ko) * 2016-10-26 2018-05-08 삼성디스플레이 주식회사 표시 장치
CN106783926B (zh) * 2016-12-28 2020-05-05 上海天马有机发光显示技术有限公司 一种显示面板及其装置
KR102544242B1 (ko) * 2018-03-16 2023-06-19 삼성디스플레이 주식회사 표시 장치
CN111972043B (zh) * 2018-03-29 2023-08-01 夏普株式会社 显示装置及其制造方法
CN110164916B (zh) * 2018-12-05 2021-02-02 京东方科技集团股份有限公司 显示面板、显示设备及制造显示面板的方法
CN114759071A (zh) * 2019-04-09 2022-07-15 京东方科技集团股份有限公司 显示基板及其制造方法、显示装置
CN110112101B (zh) * 2019-05-08 2021-10-08 武汉天马微电子有限公司 显示面板的制作方法、显示面板以及显示装置
US20210028388A1 (en) * 2019-07-22 2021-01-28 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Oled display panel
CN110416282A (zh) * 2019-08-28 2019-11-05 云谷（固安）科技有限公司 显示装置及其显示基板

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040090178A1 (en) * 2002-11-12 2004-05-13 Feng-Ju Chuang Organic electro-luminescent device
CN109920803A (zh) * 2019-03-25 2019-06-21 京东方科技集团股份有限公司 一种可拉伸显示基板及显示装置
CN109935730A (zh) * 2019-03-28 2019-06-25 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
CN109935621A (zh) * 2019-03-29 2019-06-25 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
CN110246984A (zh) * 2019-06-21 2019-09-17 京东方科技集团股份有限公司 一种显示面板、显示装置和显示面板的制作方法
CN110265583A (zh) * 2019-07-26 2019-09-20 京东方科技集团股份有限公司 一种显示面板及其制备方法、显示装置

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