WO2021079565A1 - 複合キャパシタ - Google Patents

複合キャパシタ Download PDF

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Publication number
WO2021079565A1
WO2021079565A1 PCT/JP2020/026830 JP2020026830W WO2021079565A1 WO 2021079565 A1 WO2021079565 A1 WO 2021079565A1 JP 2020026830 W JP2020026830 W JP 2020026830W WO 2021079565 A1 WO2021079565 A1 WO 2021079565A1
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WIPO (PCT)
Prior art keywords
electrode layer
capacitor
support electrode
layer
counter electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2020/026830
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English (en)
French (fr)
Japanese (ja)
Inventor
真己 永田
清水　康弘
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Priority to JP2021554071A priority Critical patent/JP7248143B2/ja
Publication of WO2021079565A1 publication Critical patent/WO2021079565A1/ja
Priority to US17/659,524 priority patent/US11955291B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/012—Form of non-self-supporting electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
    • H01G4/385—Single unit multiple capacitors, e.g. dual capacitor in one coil
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors

Definitions

  • the present invention relates to a composite capacitor.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2015-591742 (Patent Document 1) and Japanese Patent Application Laid-Open No. 2006-128302 (Patent Document 2).
  • the composite capacitor described in Patent Document 1 includes a first structured surface, a second structured surface, a separator, and an electrolyte.
  • the first and second structured surfaces are random arrays of carbon nanotubes.
  • the first and second structured surfaces have a dielectric coating.
  • the separator is provided between the first structured surface and the second structured surface.
  • the electrolyte is provided between the first structured surface and the second structured surface.
  • the composite capacitor described in Patent Document 2 is a variable capacitor in which variable capacitance elements are connected in series.
  • the lower electrode layer, the thin film dielectric layer, and the upper electrode layer are sequentially formed on the support substrate.
  • the extraction electrode layer connects the upper electrode layer of one variable capacitance element and the upper electrode layer of another variable capacitance element.
  • a lead-out electrode layer is formed on the upper electrode layer for a plurality of capacitors having a conductive columnar portion, as in the composite capacitor described in Patent Document 2. Therefore, it is conceivable to electrically connect the upper electrode layers to each other.
  • a capacitor having a conductive columnar portion is difficult to elastically deform in the extending direction of the conductive columnar portion. Therefore, when the lead-out electrode layer is formed on the upper electrode layer for a plurality of capacitors having conductive columnar portions, the lead-out electrode layer and the upper electrode layer are separated from each other when the mounting substrate on which the composite capacitor is mounted is bent. It will be easier.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a composite capacitor capable of reducing the overall height and suppressing the occurrence of delamination.
  • the composite capacitor based on the present invention includes a first capacitor and a second capacitor.
  • the first capacitor includes a first support electrode layer, a plurality of first conductive columnar portions, a first dielectric layer, and a first counter electrode layer.
  • the plurality of first conductive columnar portions extend from the first support electrode layer along the thickness direction on one side of the first support electrode layer in the thickness direction of the first support electrode layer.
  • Each of the plurality of first conductive columnar portions has a nano-sized outer diameter.
  • the first dielectric layer covers the first support electrode layer and the plurality of first conductive columnar portions on the one side of the first support electrode layer.
  • the first counter electrode layer covers the first dielectric layer and faces the first support electrode layer and the plurality of first conductive columnar portions via the first dielectric layer.
  • the second capacitor is connected in series with the first capacitor.
  • the second capacitor includes a second support electrode layer, a plurality of second conductive columnar portions, a second dielectric layer, and a second counter electrode layer.
  • the second support electrode is adjacent to the first support electrode layer apart from each other in the in-plane direction of the first support electrode layer.
  • the plurality of second conductive columnar portions extend from the second support electrode layer along the extending direction of the plurality of first conductive columnar portions.
  • Each of the plurality of second conductive columnar portions has a nano-sized outer diameter.
  • the second dielectric layer covers the second support electrode layer and the plurality of second conductive columnar portions on the extending side of the plurality of second conductive columnar portions of the second support electrode layer.
  • the second counter electrode layer covers the second dielectric layer and faces the second support electrode layer and the plurality of second conductive columnar portions via the second dielectric layer.
  • the composite capacitor further includes a connecting conductor layer and a reinforcing conductor portion.
  • the connecting conductor layer is provided on both the surface of the first counter electrode layer opposite to the first support electrode layer side and the surface of the second counter electrode layer opposite to the second support electrode layer side. It is joined.
  • the reinforcing conductor portion is located between the first counter electrode layer and the second counter electrode layer.
  • the reinforcing conductor portion is connected to each of the first counter electrode layer, the second counter electrode layer, and the connecting conductor layer.
  • the reinforcing conductor portion is made of the same material as each of the first counter electrode layer and the second counter electrode layer.
  • the reinforcing conductor portion is made of a material different from that of the connecting conductor layer.
  • the height of the composite capacitor can be reduced as a whole, and the occurrence of delamination can be suppressed.
  • FIG. 1 is a cross-sectional view showing a state in which the composite capacitor according to the first embodiment of the present invention is mounted on a mounting substrate.
  • the composite capacitor 100 includes a first capacitor 110A and a second capacitor 110B.
  • the composite capacitor 100 is mounted on the mounting substrate 10 via the first solder 20A on the first capacitor 110A side and via the second solder 20B on the second capacitor 110B side, for example.
  • the first capacitor 110A includes a first support electrode layer 112A, a plurality of first conductive columnar portions 114A, a first dielectric layer 116A, and a first counter electrode layer 118A. ..
  • the first support electrode layer 112A is joined to the mounting substrate 10 via the solder 20A, for example.
  • the first support electrode layer 112A may be in the form of a flat plate, a foil, or a thin film.
  • the surface of the first support electrode layer 112A may have an uneven shape.
  • the handling of the first support electrode layer 112A when manufacturing the composite capacitor 100 becomes easy, and the design of the composite capacitor 100 becomes easy.
  • the first support electrode layer 112A is in the form of a foil, the first support electrode layer 112A can be easily handled when manufacturing the composite capacitor 100.
  • the composite capacitor 100 can be made lower in height.
  • the outer shape and area of the first support electrode layer 112A when the first support electrode layer 112A is viewed from the thickness direction can be appropriately designed in consideration of the capacitance of the first capacitor 110A.
  • the first support electrode layer 112A When the first support electrode layer 112A is viewed from the thickness direction, the first support electrode layer 112A has a rectangular shape, a substantially rectangular shape with curved corners, or an elliptical outer shape.
  • the first support electrode layer 112A may have holes formed when viewed from the thickness direction.
  • first support electrode layer 112A may be located inside the first counter electrode layer 118A, which will be described later, when viewed from the thickness direction.
  • first support electrode layer 112A is located inside the first counter electrode layer 118A, the specific position of the first support electrode layer 112A is appropriately changed according to the stress received by the composite capacitor 100 from the mounting substrate 10. To.
  • the first support electrode layer 112A preferably has high symmetry when viewed from the thickness direction, from the viewpoint of improving mechanical robustness.
  • the first support electrode layer 112A may have an annular outer shape when viewed from the thickness direction, and has an outer shape composed of two annular shapes in which two rings are concentrically arranged. You may have.
  • the first support electrode layer 112A may be composed of a plurality of layers. When the first support electrode layer 112A is configured by laminating a plurality of layers with each other, the first support electrode layer 112A may have at least one conductor layer. When the first support electrode layer 112A is composed of a plurality of layers, the first support electrode layer 112A may have another layer. The other layer may be located on either side of the conductor layer in the thickness direction. The other layer may be made of a metal or an insulator. When the other layer is a metal, the adhesive strength with the conductor layer is improved. When the other layer is an insulator layer, the adhesive strength with the first dielectric layer 116A can be improved by contacting the other layer with the first dielectric layer 116A described later.
  • the material constituting the first support electrode layer 112A is not particularly limited.
  • the first support electrode layer 112A is made of a metal such as copper.
  • the conductor layer may be composed of a metal such as copper.
  • Each of the plurality of first conductive columnar portions 114A is supported by the first support electrode layer 112A.
  • the plurality of first conductive columnar portions 114A extend from the first support electrode layer 112A along the thickness direction on one side of the first support electrode layer 112A in the thickness direction of the first support electrode layer 112A.
  • each of the plurality of first conductive columnar portions 114A is provided so as to extend from the surface of the first support electrode layer 112A, but extends from the inside to the outside of the first support electrode layer 112A. It may be provided so as to be put out.
  • each of the plurality of first conductive columnar portions 114A is composed of members different from the members constituting the first support electrode layer 112A, but the plurality of first conductive columnar portions 114A Each may be composed of an integral member together with the first support electrode layer 112A.
  • Each of the plurality of first conductive columnar portions 114A has a nano-sized outer diameter.
  • the nano size means, for example, 0.1 nm or more and 1000 nm or less.
  • Each of the first conductive columnar portions 114A may have a tubular shape or a bottomed tubular shape.
  • the material constituting the first conductive columnar portion 114A is not particularly limited.
  • the first conductive columnar portion 114A is made of a conductive material or a semiconductor material, but in the first conductive columnar portion 114A, a member made of a semiconductor material or an insulating material is thinly coated with a metal. It may be composed of a columnar object formed by the above.
  • Each of the first conductive columnar portions 114A contains, for example, carbon nanofibers, other nanofibers composed of ZnO or the like, nanorods or nanowires composed of ZnO, GaN, hematite or the like.
  • the first conductive columnar portion 114A is specifically made of carbon nanotubes, and more specifically, each of the first conductive columnar portions 114A is, for example, 100 to 200 carbon nanotubes. Consists of.
  • the chirality of carbon nanotubes is not particularly limited.
  • the carbon nanotube may be a semiconductor type or a metal type, and the carbon nanotube may contain both a semiconductor type and a metal type. From the viewpoint of electrical resistance, carbon nanotubes preferably have a higher proportion of metal type than semiconductor type.
  • the number of layers constituting the carbon nanotubes is not particularly limited.
  • the carbon nanotube may be SWCNT (Single Wall Carbon Nanotube) composed of one layer or MWCNT (Multiwall Carbon Nanotube) composed of two or more layers.
  • the length of each of the first conductive columnar portions 114A is not particularly limited.
  • the length of each of the first conductive columnar portions 114A is preferably long from the viewpoint of the capacitance density per area in the plane direction orthogonal to the extending direction of the first conductive columnar portion 114A.
  • the length of each of the first conductive columnar portions 114A is, for example, several ⁇ m or more, 20 ⁇ m or more, 50 ⁇ m or more, 100 ⁇ m or more, 500 ⁇ m or more, 750 ⁇ m or more, 1000 ⁇ m or more, or 2000 ⁇ m or more.
  • the lengths of the first conductive columnar portions 114A may be different from each other, but the tips 115A of the first conductive columnar portions 114A are aligned on a virtual plane substantially perpendicular to the stacking direction. Is preferable. Thereby, the capacitance of the first capacitor 110A can be easily controlled.
  • a method of providing the plurality of first conductive columnar portions 114A on the first support electrode layer 112A for example, a plurality of first conductive columnar portions 114A grown on a substrate (not shown) and then grown on the substrate. Examples thereof include a method of transferring the first conductive columnar portion 114A to the first support electrode layer 112A.
  • the catalyst particles are arranged on the substrate.
  • the first conductive columnar portion 114A grows from the surface of the catalyst particles.
  • Each of the plurality of first conductive columnar portions 114A grows so that the growth end portion is separated from the substrate.
  • Examples of the material constituting the substrate include silicon oxide, silicon, gallium arsenide, aluminum, and SUS.
  • the catalyst particles are made of, for example, Fe, Ni or Co when the first conductive columnar portion 114A is a carbon nanotube, or an alloy containing these, and when the first conductive columnar portion 114A contains ZnO, for example, Pt or Au or It is made of an alloy containing these.
  • Examples of the method for arranging the catalyst particles include a combination of a CVD (Chemical Vapor Deposition) method, a sputtering or PVD (Physical Vapor Deposition) method, and a lithography or etching. The positions of the catalyst particles are appropriately selected by patterning.
  • the growth method of the plurality of first conductive columnar portions 114A is not particularly limited.
  • the plurality of first conductive columnar portions 114A can be grown by using a CVD method, a plasma-enhanced CVD method, or the like.
  • the gas used in the CVD method or the plasma-enhanced CVD method include carbon monoxide, methane, ethylene, acetylene, or a mixture thereof with hydrogen or ammonia.
  • each of the plurality of first conductive columnar portions 114A is grown by using the above-mentioned CVD or plasma-enhanced CVD method or the like, each of the plurality of first conductive columnar portions 114A can be formed by appropriately selecting temperature conditions, gas conditions, and the like. However, each of the plurality of first conductive columnar portions 114A can be grown so as to have a length and an outer diameter within a desired range. However, the specific lengths of the plurality of first conductive columnar portions 114A differ from each other due to variations in gas concentration, gas flow rate, and temperature on the surface of the substrate.
  • the growth ends of the plurality of first conductive columnar portions 114A grown as described above are joined to the first support electrode layer 112A.
  • the substrate is peeled off from the plurality of first conductive columnar portions 114A. In this way, the plurality of first conductive columnar portions 114A are transferred from the substrate to the first support electrode layer 112A.
  • the growth ends of the plurality of first conductive columnar portions 114A are chemically or mechanically transferred to the first support electrode layer 112A. It may be transferred so as to be inserted into. As a result, as shown in FIG. 1, the positions of the tips 115A of the plurality of first conductive columnar portions 114A can be aligned with each other in the direction in which the plurality of first conductive columnar portions 114A are lined up.
  • each of the plurality of first conductive columnar portions 114A is composed of an integral member together with the first support electrode layer 112A, instead of the above-mentioned method, the surface of one flat plate-shaped electrode layer is formed.
  • the plurality of first conductive columnar portions 114A and the first support electrode layer 112A may be formed by processing the first conductive columnar portion 114A into a concavo-convex shape by chemical etching or the like.
  • the first dielectric layer 116A covers the first support electrode layer 112A and the plurality of first conductive columnar portions 114A on one side of the first support electrode layer 112A.
  • the first dielectric layer 116A further covers the entire surface of the first support electrode layer 112A on the first conductive columnar portion 114A side, except for the portion provided with the plurality of first conductive columnar portions 114A.
  • An additional conductor layer may be provided between the first dielectric layer 116A and the plurality of first conductive columnar portions 114A. Thereby, the parasitic resistance of the first capacitor 110A can be further reduced.
  • the material constituting the first dielectric layer 116A is not particularly limited, and for example, silicon dioxide, aluminum oxide, silicon nitride, tantalum oxide, hafnium oxide, barium titanate, lead zirconate titanate, or a combination thereof can be used. Can be mentioned.
  • the coating method of the first dielectric layer 116A is not particularly limited, and examples thereof include a plating method, an ALD (Atomic Layer Deposition) method, a CVD method, a MOCVD (Metalorganic Chemical Vapor Deposition) method, a supercritical fluid deposition method, and sputtering. Be done.
  • the first counter electrode layer 118A covers the first dielectric layer 116A and faces the first support electrode layer 112A and the plurality of first conductive columnar portions 114A via the first dielectric layer 116A.
  • the surface 119A of the first counter electrode layer 118A located on the side opposite to the first support electrode layer 112A side is planar.
  • the material constituting the first counter electrode layer 118A is not particularly limited, and examples thereof include metals such as silver, gold, copper, platinum, and aluminum, or alloys containing these.
  • the coating method of the first counter electrode layer 118A is not particularly limited, and examples thereof include a plating method, an ALD method, a CVD method, a MOCVD method, a supercritical fluid deposition method, and sputtering.
  • the second capacitor 110B includes a second support electrode layer 112B, a plurality of second conductive columnar portions 114B, a second dielectric layer 116B, and a second counter electrode layer 118B. ..
  • the second capacitor 110B can have a configuration similar to that of the first capacitor 110A, and the first capacitor 110A can be manufactured by a method that can be manufactured. That is, the second support electrode layer 112B of the second capacitor 110B, the plurality of second conductive columnar portions 114B, the second dielectric layer 116B, and the second counter electrode layer 118B are each the first support of the first capacitor 110A.
  • the electrode layer 112A, the plurality of first conductive columnar portions 114A, the first dielectric layer 116A, and the first counter electrode layer 118A can have the same configuration as possible.
  • the second support electrode layer 112B is bonded to the mounting substrate 10 via the solder 20B, for example.
  • the second support electrode layer 112B is adjacent to the first support electrode layer 112A apart from each other in the in-plane direction of the first support electrode layer 112A.
  • Each of the plurality of second conductive columnar portions 114B has a nano-sized outer diameter.
  • the plurality of second conductive columnar portions 114B extend from the second support electrode layer 112B along the extending direction of the plurality of first conductive columnar portions 114A.
  • the second dielectric layer 116B is the second support on the extending side of the plurality of second conductive columnar portions 114B of the second support electrode layer 112B.
  • the electrode layer 112B and the plurality of second conductive columnar portions 114B are covered.
  • the second counter electrode layer 118B covers the second dielectric layer 116B and faces the second support electrode layer 112B and the plurality of second conductive columnar portions 114B via the second dielectric layer 116B.
  • the composite capacitor 100 further includes a connecting conductor layer 120 and a reinforcing conductor portion 130.
  • the connecting conductor layer 120 is located on the surface 119A located on the side opposite to the first support electrode layer 112A side of the first counter electrode layer 118A and on the side opposite to the second support electrode layer 112B side of the second counter electrode layer 118B. It is joined to both of the located surfaces 119B. As a result, the second capacitor 110B is connected in series with the first capacitor 110A.
  • the specific shape and thickness of the connecting conductor layer 120 are not particularly limited.
  • the connecting conductor layer 120 may be in the form of a flat plate, a foil, or a thin film.
  • the connecting conductor layer 120 may have an uneven shape on its surface. When the connecting conductor layer 120 has a flat plate shape, the connecting conductor layer 120 can be easily handled when the composite capacitor 100 is manufactured, and the design of the composite capacitor 100 becomes easy. If the connecting conductor layer 120 is foil-shaped, the connecting conductor layer 120 can be easily handled when manufacturing the composite capacitor 100. If the connecting conductor layer 120 is in the form of a thin film, the composite capacitor 100 can be made lower in height. Further, when an overcurrent flows through the composite capacitor 100, the thinner the thickness of the connecting conductor layer 120, the easier it is to melt the connecting conductor layer 120. Therefore, the connecting conductor layer 120 functions as a fuse. Can be made to.
  • the connecting conductor layer 120 When the connecting conductor layer 120 is viewed from the thickness direction, the connecting conductor layer 120 can have a rectangular shape, a substantially rectangular shape with curved corners, or an elliptical outer shape. If the corners of the connecting conductor layer 120 are curved when viewed from the thickness direction, the stress in the connecting conductor layer 120 can be easily relaxed, and the mechanical robustness is improved.
  • the connecting conductor layer 120 may have holes formed when viewed from the thickness direction.
  • the connecting conductor layer 120 preferably has high symmetry when viewed from the thickness direction, from the viewpoint of improving mechanical robustness.
  • the portion of the connecting conductor layer 120 in contact with the first counter electrode layer 118A may be located inside the first counter electrode layer 118A.
  • the portion of the connecting conductor layer 120 in contact with the second counter electrode layer 118B may be located inside the second counter electrode layer 118B.
  • the connecting conductor layer 120 may have a dumbbell-shaped outer shape. At this time, each of both ends of the dumbbell is located on the surface 119A of the first counter electrode layer 118A and on the surface 119B of the second counter electrode layer 118B opposite to the second support electrode layer 112B side. That is, the central axis of the dumbbell is located between the first support electrode layer 112A and the second support electrode layer 112B when viewed from the thickness direction. Thereby, the portion of the central axis can effectively relieve the stress in the in-plane direction. Further, when an overcurrent flows through the composite capacitor 100, the melting stage at the central shaft portion becomes easy, so that the connecting conductor layer 120 can also function as a fuse.
  • the material constituting the connecting conductor layer 120 is not particularly limited.
  • the connecting conductor layer 120 is made of a metal such as copper, a semiconductor material, or a ceramic material.
  • the connecting conductor layer 120 is made of metal, the adhesive strength between the connecting conductor layer 120 and the first counter electrode layer 118A and the second counter electrode layer 118B can be improved.
  • the connecting conductor layer 120 is made of a semiconductor material, a metal adhesive layer is formed in advance between the connecting conductor layer 120 and the first counter electrode layer 118A and the second counter electrode layer 118B to conduct the connection conductivity.
  • the adhesive strength between the body layer 120 and the first counter electrode layer 118A and the second counter electrode layer 118B can be improved.
  • the connecting conductor layer 120 is made of ceramic, since the ceramic is a relatively hard material, robustness can be improved against stress received from other members.
  • the reinforcing conductor portion 130 is located between the first counter electrode layer 118A and the second counter electrode layer 118B.
  • the reinforcing conductor portion 130 is connected to each of the first counter electrode layer 118A, the second counter electrode layer 118B, and the connecting conductor layer 120.
  • the reinforcing conductor portion 130 is made of the same material as each of the first counter electrode layer 118A and the second counter electrode layer 118B. As a result, the mechanical robustness of the composite capacitor 100 as a whole is improved, and the heat dissipation efficiency from the reinforcing conductor portion 130 is also improved.
  • the reinforcing conductor portion 130, the first counter electrode layer 118A and the second counter electrode layer 118B may be formed of a member integrally integrated with each other.
  • the composite capacitor 100 can be easily manufactured.
  • the boundary between the first counter electrode layer 118A and the reinforcing conductor portion 130 is the boundary of the first support electrode layer 112A. , It is located on one side in the thickness direction with respect to the side surface on the second capacitor 110B side.
  • the boundary between the second counter electrode layer 118B and the reinforcing conductor portion 130 is the boundary of the second support electrode layer 112B. , It is located on one side in the thickness direction with respect to the side surface on the side of the first capacitor 110A.
  • the reinforcing conductor portion 130 is made of a material different from that of the connecting conductor layer 120.
  • the dimension of the central portion 131 in the in-plane direction of the reinforcing conductor portion 130 in the thickness direction is the above-mentioned dimension of the first region 132A in which the reinforcing conductor portion 130 and the first counter electrode layer 118A are in contact with each other. It is smaller than the dimension in the thickness direction and smaller than the dimension in the thickness direction of the second region 132B where the reinforcing conductor portion 130 and the second counter electrode layer 118B are in contact with each other.
  • the end portion 133A on the first support electrode layer 112A side of the first region 132A is located closer to the first support electrode layer 112A than the tips 115A of the plurality of first conductive columnar portions 114A in the thickness direction. doing. Further, the end portion 133A is located on the first support electrode layer 112A side from the average position PA of the center of each of the plurality of first conductive columnar portions 114A in the thickness direction.
  • the end portion 133B on the second support electrode layer 112B side of the second region 132B is located closer to the second support electrode layer 112B than the tip 115B of the plurality of second conductive columnar portions 114B in the thickness direction. doing. Further, the end portion 133B is located closer to the second support electrode layer 112B than the average position PB at the center of each of the plurality of second conductive columnar portions 114B in the thickness direction.
  • the surface 134 of the reinforcing conductor portion 130 located on the side opposite to the connecting conductor layer 120 side is curved convexly toward the connecting conductor layer 120 side.
  • the portion 135 of the surface 134 closest to the connecting conductor layer 120 is in the direction from the first capacitor 110A to the second capacitor 110B between the first capacitor 110A and the second capacitor 110B. When divided into four equal parts, it is located in the two central regions. More specifically, the portion 135 of the surface 134 closest to the connecting conductor layer 120 is located at the center between the first capacitor 110A and the second capacitor 110B.
  • the reinforcing conductor portion 130 When viewed from the thickness direction, the reinforcing conductor portion 130 may be in contact with at least a part of the first counter electrode layer 118A between the first capacitor 110A and the second capacitor 110B, and It suffices if it is in contact with at least a part of the second counter electrode layer 118B.
  • the method for forming the reinforcing conductor portion 130 is not particularly limited, and examples thereof include a plating method, an ALD method, a CVD method, a MOCVD method, a supercritical fluid deposition method, and sputtering.
  • the first counter electrode layer 118A and the second counter electrode layer 118B are horizontal.
  • the first counter electrode layer 118A, the second counter electrode layer 118B, and the reinforcing conductor portion 130 may be formed by grinding the member from the support portion side with a dicer or the like.
  • the reinforced conductor portion 130 is molded in this way, it becomes easy to adjust the shape of the reinforced conductor portion 130, that is, the thickness of the reinforced conductor portion 130, and eventually, the equivalent series resistance in the composite capacitor 100 is adjusted. Is also easy.
  • each of the plurality of first conductive columnar portions 114A and the plurality of second conductive columnar portions 114B is mounted on the mounting substrate 10. On the other hand, it extends vertically. Further, the first capacitor 110A and the second capacitor 110B are elastically deformed when a mechanical force is applied in the extending direction of the plurality of first conductive columnar portions 114A and the plurality of second conductive columnar portions 114B, respectively. It is unlikely to occur.
  • the first counter electrode layer 118A and the second counter electrode layer 118B Forces that pull each other are concentrated with and from the connecting conductor layer 120.
  • the connecting conductor layer 120 At the interface between the first counter electrode layer 118A and the second counter electrode layer 118B and the connecting conductor layer 120 facing the portion between the first capacitor 110A and the second capacitor 110B, they are attracted to each other as described above. Power works especially strongly.
  • the composite capacitor 100 includes the reinforcing conductor portion 130.
  • the reinforcing conductor portion 130 is located between the first counter electrode layer 118A and the second counter electrode layer 118B.
  • the reinforcing conductor portion 130 is connected to each of the first counter electrode layer 118A, the second counter electrode layer 118B, and the connecting conductor layer 120.
  • the reinforcing conductor portion 130 is made of the same material as each of the first counter electrode layer 118A and the second counter electrode layer 118B.
  • the reinforcing conductor portion 130 is made of a material different from that of the connecting conductor layer 120.
  • the dimension of the central portion 131 of the reinforcing conductor portion 130 in the in-plane direction in the thickness direction is the dimension of the first region 132A in which the reinforcing conductor portion 130 and the first counter electrode layer 118A are in contact with each other. It is smaller than the dimension in the thickness direction and smaller than the dimension in the thickness direction of the second region 132B where the reinforcing conductor portion 130 and the second counter electrode layer 118B are in contact with each other.
  • the portion of the reinforcing conductor portion 130 located near the interface between the connecting conductor layer 120 and the first counter electrode layer 118A and the second counter electrode layer 118B is the connecting conductor layer 120 and the first
  • the counter electrode layer 118A and the second counter electrode layer 118B can be firmly connected to each other, and the central portion 131 can absorb the stress acting on the composite capacitor 100 when the mounting substrate 10 is distorted.
  • the surface 134 of the reinforcing conductor portion 130 located on the side opposite to the connecting conductor layer 120 side is curved convexly toward the connecting conductor layer 120 side.
  • the surface 134 is smoothly curved, so that the mechanical robustness of the reinforcing conductor portion 130 is improved.
  • the portion 135 closest to the connecting conductor layer 120 is the first capacitor 110A and the second capacitor.
  • the area with 110B is divided into four equal parts in the direction from the first capacitor 110A to the second capacitor 110B, it is located in the two central regions thereof.
  • the stress acting on the composite capacitor 100 when the mounting substrate 10 is bent and distorted is absorbed in the portion of the connecting conductor layer 120 that comes into contact with the reinforcing conductor portion 130. Thereby, the mechanical robustness of the composite capacitor 100 can be improved.
  • the end portion 133A on the first support electrode layer 112A side of the first region 132A is located closer to the first support electrode layer 112A than the tips 115A of the plurality of first conductive columnar portions 114A in the thickness direction. doing.
  • the end portion 133B of the second region 132B on the second support electrode layer 112B side is located closer to the second support electrode layer 112B than the tips 115B of the plurality of second conductive columnar portions 114B in the thickness direction.
  • each of the plurality of first conductive columnar portions 114A and the plurality of second conductive columnar portions 114B extends so as to bend from the support portion side to the tips 115A and 115B, respectively, and the first counter electrode layer 118A and the first counter electrode layer 118A and the first 2 Even if it is located on the side surface side of the counter electrode layer 118B, the reinforcing conductor portion 130 covers the tips 115A and 115B of the first conductive columnar portion 114A and the plurality of second conductive columnar portions 114B, respectively. be able to. As a result, it is possible to prevent the composite capacitor 100 from being destroyed in the short mode by short-circuiting any of the tips 115A and 115B with the other member.
  • the end portion 133A on the first support electrode layer 112A side of the first region 132A is the first support electrode from the average position PA of the center of each of the plurality of first conductive columnar portions 114A in the thickness direction. It is located on the layer 112A side.
  • the end portion 133B on the second support electrode layer 112B side of the second region 132B is located on the second support electrode layer 112B side from the average position PB of the center of each of the plurality of second conductive columnar portions 114B in the thickness direction. ing.
  • the thickness of the reinforcing conductor portion 130 is increased so that the parasitic resistance in the conductive path connecting the first capacitor 110A and the second capacitor 110B to each other is increased.
  • the components can be reduced.
  • the composite capacitor according to the second embodiment of the present invention is different from the composite capacitor 100 according to the first embodiment of the present invention in that it further includes an insulating portion. Therefore, the description of the same configuration as that of the first embodiment of the present invention will not be repeated.
  • FIG. 2 is a cross-sectional view showing a composite capacitor according to the second embodiment of the present invention.
  • the composite capacitor 200 according to the second embodiment of the present invention further includes an insulating portion 240 provided in a gap between the first capacitor 110A and the second capacitor 110B.
  • an insulating portion 240 provided in a gap between the first capacitor 110A and the second capacitor 110B.
  • the insulating portion 240 is in close contact with the surface 134 of the reinforcing conductor portion 130. Further, the insulating portion 240 has a first support electrode layer 112A and a first counter electrode in a portion surrounded by the first capacitor 110A, the second capacitor 110B, and the reinforcing conductor portion 130 when viewed from the in-plane direction. It is in contact with each of the layer 118A, the second support electrode layer 112B, and the second counter electrode layer 118B.
  • the material constituting the insulating portion 240 is not particularly limited.
  • Examples of the material constituting the insulating portion 240 include ceramics such as alumina and hafnium.
  • the method for forming the insulating portion 240 is not particularly limited, and examples thereof include a plating method, an ALD method, a CVD method, a MOCVD method, a supercritical fluid deposition method, and sputtering.
  • the insulating portion 240 may be formed by applying a paste-like material containing an insulating material and then drying the material.
  • the reinforcing conductor portion 130 having a predetermined configuration can reduce the overall height of the composite capacitor 200, and also the connecting conductor layer 120, the first counter electrode layer 118A, and the second counter electrode layer 118B. It is possible to suppress the occurrence of delamination between the layers.
  • each of the composite capacitors according to the third to sixth embodiments of the present invention has a different outer shape of the reinforcing conductor portion from the composite capacitor 100 according to the first embodiment of the present invention. Therefore, the description of the same configuration as that of the first embodiment of the present invention will not be repeated.
  • FIG. 3 is a cross-sectional view showing a composite capacitor according to a third embodiment of the present invention.
  • the surface 334 of the reinforcing conductor portion 330 located on the side opposite to the connecting conductor layer 120 side is the reinforcing conductor portion 330.
  • the central portion 131 is parallel to the in-plane direction.
  • the stress acting on the composite capacitor 300 when the mounting substrate is bent and distorted can be absorbed by the central portion 131 having a constant thickness in the reinforcing conductor portion 330.
  • the mechanical robustness of the composite capacitor 300 can be improved.
  • the thickness of the central portion 131 can be easily adjusted, it becomes easy to control the resistance value of the equivalent series resistance in the conductive path composed of the reinforcing conductor portion 330 and the connecting conductor layer 120.
  • FIG. 4 is a cross-sectional view showing a composite capacitor according to a fourth embodiment of the present invention.
  • the reinforcing conductor portion 430 has a concave outer shape having an opening on the support electrode layer side. Therefore, in the composite capacitor 400 according to the fourth embodiment of the present invention, the surface 434 is in the central portion 131 of the reinforcing conductor portion 430 in the in-plane direction, similarly to the composite capacitor 300 according to the third embodiment of the present invention. It is parallel.
  • FIG. 5 is a cross-sectional view showing a composite capacitor according to a fifth embodiment of the present invention.
  • the surface 534 is the central portion 131 of the reinforcing conductor portion 530, similarly to the composite capacitor 300 according to the third embodiment of the present invention. Is parallel to the in-plane direction.
  • the surface 534 is convex toward the first support electrode layer 112A side and the second support electrode layer 112B side. It is curved.
  • FIG. 6 is a cross-sectional view showing a composite capacitor according to a sixth embodiment of the present invention.
  • the reinforcing conductor portion 630 includes the first reinforcing conductor portion 630A and the second reinforcing conductor portion 630B which are separated from each other. There is.
  • the first reinforcing conductor portion 630A is in contact with the first counter electrode layer 118A and the connecting conductor layer 120.
  • the second reinforcing conductor portion 630B is in contact with the second counter electrode layer 118B and the connecting conductor layer 120.
  • the composite capacitors 300, 400 are also provided by the reinforcing conductor portions 330, 430, 530, 630 having a predetermined configuration. It is possible to reduce the overall height of the 500 and 600 and suppress the occurrence of delamination between the connecting conductor layer 120 and the first counter electrode layer 118A and the second counter electrode layer 118B.

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  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
PCT/JP2020/026830 2019-10-24 2020-07-09 複合キャパシタ Ceased WO2021079565A1 (ja)

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US12034039B2 (en) * 2021-10-18 2024-07-09 Globalfoundries Singapore Pte. Ltd. Three electrode capacitor structure using spaced conductive pillars

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JP2014523841A (ja) * 2011-06-07 2014-09-18 ファーストキャップ・システムズ・コーポレイション ウルトラキャパシタのためのエネルギー貯蔵媒体
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US20220384564A1 (en) * 2021-05-27 2022-12-01 International Business Machines Corporation Vertically-stacked interdigitated metal-insulator-metal capacitor for sub-20 nm pitch
US11715594B2 (en) * 2021-05-27 2023-08-01 International Business Machines Corporation Vertically-stacked interdigitated metal-insulator-metal capacitor for sub-20 nm pitch

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US11955291B2 (en) 2024-04-09

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