WO2021074980A1 - パワーモジュール - Google Patents

パワーモジュール Download PDF

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Publication number
WO2021074980A1
WO2021074980A1 PCT/JP2019/040555 JP2019040555W WO2021074980A1 WO 2021074980 A1 WO2021074980 A1 WO 2021074980A1 JP 2019040555 W JP2019040555 W JP 2019040555W WO 2021074980 A1 WO2021074980 A1 WO 2021074980A1
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WIPO (PCT)
Prior art keywords
metal wire
power module
semiconductor chip
sheet
metal
Prior art date
Application number
PCT/JP2019/040555
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English (en)
French (fr)
Inventor
賢太 中原
Original Assignee
三菱電機株式会社
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Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to DE112019007832.1T priority Critical patent/DE112019007832T5/de
Priority to US17/632,164 priority patent/US20220285243A1/en
Priority to PCT/JP2019/040555 priority patent/WO2021074980A1/ja
Priority to JP2021552025A priority patent/JP7106014B2/ja
Priority to CN201980101259.6A priority patent/CN114556548A/zh
Publication of WO2021074980A1 publication Critical patent/WO2021074980A1/ja

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Definitions

  • the present invention relates to an improvement in heat dissipation in a power module.
  • wiring on a semiconductor chip is performed by bonding using a metal wire. If a metal wire is used for wiring on a semiconductor chip, it is possible to develop a variety of products in which the size or electrode shape of the semiconductor chip is changed in the same package by changing the wiring shape.
  • Patent Document 1 discloses a technique for improving heat dissipation in the bonding of the lower side of a semiconductor chip.
  • Patent Document 2 discloses a technique for improving the heat dissipation of the encapsulant.
  • the temperature of the wire wiring when the power module is energized rises.
  • the life of the semiconductor chip and the wire bond joint is shortened due to the temperature cycle of heat generation and cooling, or the wire wiring itself is blown.
  • the present invention has been made to solve the above problems, and an object of the present invention is to improve the heat dissipation of a metal wire on a semiconductor chip in a power module.
  • the power module of the present invention includes a base plate, an insulating substrate provided on the base plate and having a circuit pattern, at least one semiconductor chip mounted on the circuit pattern of the insulating substrate, and a plurality of connected to the surface of the semiconductor chip.
  • the metal wire comprises a metal wire and a heat conductive sheet that contacts the metal wire from above, and the metal wire includes at least one first metal wire that connects the surface of the semiconductor chip and the circuit pattern, and two on the surface of the semiconductor chip. It comprises at least one second metal wire, which connects the points and has the same potential as the first metal wire, the heat conductive sheet comprises a graphite sheet, and the sheet surface of the heat conductive sheet is at least one first metal.
  • the wire is in contact with at least one second metal wire.
  • the sheet surface of the heat conductive sheet containing the graphite sheet comes into contact with at least one first metal wire and at least one second metal wire. Therefore, the heat of the second metal wire is transferred to the first metal wire through the graphite sheet and radiated from the first metal wire to the circuit pattern, so that the temperature rise of the second metal wire can be prevented. In this way, the heat dissipation of the metal wire on the semiconductor chip is improved.
  • FIG. It is sectional drawing of the power module of Embodiment 1.
  • FIG. It is an isometric view of the power module of Embodiment 2.
  • FIG. It is a top view of the power module of Embodiment 2.
  • FIG. 1 is a cross-sectional view of the power module 101 of the first embodiment.
  • the power module 101 includes a base plate 1, an insulating substrate 7, a diode chip 81, transistor chips 9a1, 9b1, metal wires 10a, 10b, 10c, a graphite sheet 11, a case 12, and a sealing material 13.
  • the insulating substrate 7 is formed on the upper surface of the base plate 1.
  • the insulating substrate 7 is composed of an insulating base material 4, a lower surface pattern 2 made of a metal bonded to the lower surface of the insulating base material 4 with a bonding material 3, and a metal bonded to the upper surface of the insulating base material 4 with a bonding material 5. It is configured to include circuit patterns 6a, 6b, and 6c.
  • the lower surface pattern 2 of the insulating substrate 7 is formed on the upper surface of the base plate 1.
  • the diode chip 81 and the transistor chips 9a1 and 9b1 are bonded to the circuit pattern 6b by a bonding material such as solder or a sintered material.
  • the diode chip 81 functions as a freewheeling diode for the transistor chips 9a1 and 9b1.
  • the diode chip 81 and the transistor chips 9a1 and 9b1 are examples of semiconductor chips. In place of these semiconductor chips, another semiconductor chip may be mounted on the power module 101, or one semiconductor chip may be mounted.
  • Wire wiring with metal wires is applied to the upper surface of the semiconductor chip.
  • the metal wire connecting the diode chip 81 and the circuit pattern 6a is referred to as a metal wire 10a.
  • the metal wire 10a is also referred to as a first metal wire.
  • metal wires connecting two places on the diode chip 81, two places on the diode chip 81 and the transistor chip 9a1, two places on the transistor chip 9a1, and two places on the transistor chip 9a1 and the transistor chip 9a2, and the transistor 9a2 are connected. Let it be a metal wire 10b.
  • the metal wire 10b is also referred to as a second metal wire.
  • the transistor chip 9a2 and the circuit pattern 6c are connected by a metal wire 10c.
  • the metal wire 10c is a gate wire that connects the gate electrode of the transistor chip 9a2 and the circuit pattern 6c, and has the same potential as the gate electrode (hereinafter, also referred to as “gate potential”).
  • the metal wire 10a and the metal wire 10b have the same potential as the emitter electrode of the transistor chip 9a2 (hereinafter, also referred to as “emitter potential”).
  • the graphite sheet 11 is provided on the metal wires 10a and 10b connected to the upper surface of the semiconductor chip, with the sheet surface in contact with the metal wires 10a and 10b.
  • the graphite sheet 11 is an anisotropic heat conductive material having a low thermal conductivity of 1 W / mK in the thickness direction and a high thermal conductivity of 500 W / mK or more in the plane direction. Therefore, the heat of the metal wire 10b is transferred to the metal wire 10a by the graphite sheet 11, and is further dissipated from the metal wire 10a to the circuit pattern 6a. Thereby, the temperature of the metal wire 10b can be lowered.
  • the graphite sheet 11 functions as a heat conductive sheet that conducts the heat of the metal wire 10b in the plane direction.
  • the graphite sheet 11 does not come into contact with the metal wire 10c because the metal wire 10c has a different potential than the metal wires 10a and 10b.
  • the base plate 1 is fitted to the case 12, and the case 12 accommodates the base plate 1, the insulating substrate 7, the diode chip 81, the transistor chips 9a1, 9b1, the metal wires 10a, 10b, 10c, and the graphite sheet 11. ing.
  • the inside of the case 12 is filled with a sealing material 13 made of gel or epoxy resin, and the diode chip 81, the transistor chips 9a1, 9b1, the metal wires 10a, 10b, 10c, and the graphite sheet 11 are sealed by the sealing material 13. Has been done.
  • the graphite sheet 11 is in contact with all the metal wires 10b, but as long as it is in contact with the metal wire 10a and at least one metal wire 10b having the same potential as the metal wire 10a, the above heat dissipation effect can be obtained. Obtainable. However, the larger the number of metal wires 10b that the graphite sheet 11 contacts, the more heat of the metal wires 10b can be dissipated to the circuit pattern 6a.
  • the heat generated on the semiconductor chip of the power module is transmitted to the base plate 1 through the bonding under the semiconductor chip, and is dissipated from the base plate 1 to the cooling fins.
  • the temperature of the metal wire becomes high due to heat transfer from the semiconductor chip or heat generated by the energizing current of the metal wire itself.
  • the heat of the metal wire 10b is dissipated by the graphite sheet 11 in the direction parallel to the surface of the base plate 1, so that the temperature rise of the metal wire 10b is alleviated. ..
  • the power module 101 of the first embodiment includes a base plate 1, an insulating substrate 7 provided on the base plate 1 and having circuit patterns 6a, 6b, 6c, and a circuit pattern 6b of the insulating substrate 7. It includes a diode chip 81 and transistor chips 9a1 and 9b1 which are semiconductor chips mounted on the semiconductor chip, a plurality of metal wires connected to the surface of the semiconductor chip, and a heat conductive sheet which comes into contact with the metal wires from above.
  • the metal wire connects the metal wire 10a, which is at least one first metal wire connecting the surface of the diode chip 81 and the circuit pattern 6a, and two points on the surface of the semiconductor chip, and has the same potential as the metal wire 10a.
  • the metal wire 10b which is at least one second metal wire, is provided.
  • the heat conductive sheet includes a graphite sheet 11, and the sheet surface of the heat conductive sheet is in contact with at least one metal wire 10a and at least one metal wire 10b. Therefore, the heat of the metal wire 10b is transferred to the metal wire 10a through the graphite sheet 11 and radiated from the metal wire 10a to the circuit pattern 6a, so that the temperature rise of the metal wire 10b can be prevented.
  • FIG. 2 is an isometric view of the power module 102 of the second embodiment.
  • FIG. 3 is a top view of the power module 102.
  • FIG. 4 is an isometric view showing a state before the graphite sheet 11 of the power module 102 is installed.
  • the power module 102 includes a diode chip 82-88 and transistor chips 9a2-9a8 and 9b2-9b8 in addition to the configuration of the power module 101 of the first embodiment.
  • the power module 102 is mounted in parallel with a set of eight semiconductor chips including one diode chip 8n and two transistor chips 9an and 9bn. Note that n is a natural number from 1 to 8.
  • the connection status of the metal wires in each set of semiconductor chips is the same.
  • the transistor chip is arranged in the region 14 of FIG. 3, and the diode chip is arranged in the region 15.
  • metal wires 10a and 10b are shown as ribbon wires in FIGS. 2 to 4, they may be single wire wires.
  • a wire wire has less restrictions on the chip size than a ribbon wire, and can be bonded in an oblique direction.
  • the diode chip 8n functions as a freewheeling diode of the transistor chips 9an and 9bn.
  • the fact that the semiconductor chips are mounted in parallel is shown in FIG. 4 that the metal wire 10c, which is a gate wire, is connected to each of the transistor chips 9a1-9a8 from the same circuit pattern 6c. ..
  • a plurality of semiconductor chips mounted in parallel are connected by a metal wire to form an electric circuit.
  • the transistor chip 9b1 and the transistor chip 9b2 are connected by a metal wire 10b1
  • the transistor chip 9b2 and the transistor chip 9a3 are connected by a metal wire 10b1.
  • These metal wires 10b1 have the same potential as the metal wire 10a, and are also referred to as a second metal wire like the metal wire 10b.
  • the plurality of semiconductor chips mounted in parallel are energized at the same time, and a large current of the power module 102 is realized.
  • the bond point since the semiconductor chips at both ends of the metal wire 10b1 are energized at the same time, the bond point generates heat, and when the metal wire 10b1 itself is energized, the temperature becomes higher than that on the semiconductor chip. turn into.
  • the graphite sheet 11 connects a set of transistor chips 9a1, 9b1, diode chips 81 and a set of transistor chips 9a2, 9b2, diode chips 82, in addition to the features of the first embodiment. It is formed on the upper portion of the metal wire 10b1 so as to come into contact with the metal wire 10b1.
  • the power module 102 of the second embodiment has transistor chips 9b1-9b8, which are a plurality of semiconductor chips in which a gate terminal as a control terminal is connected to the same circuit pattern 6a or a circuit pattern having the same potential. Including, the sheet surface of the heat conductive sheet comes into contact with the metal wire 10b1, which is the second metal wire connecting the transistor chips 9b1-9b8. Since the semiconductor chips 9b1-9b8 at both ends of the metal wire 10b1 are simultaneously energized and generate heat, the metal wire 10b1 may have a higher temperature than that on the semiconductor chip 9b1-9b8. By conducting the wire 10a and dissipating heat from the metal wire 10a to the circuit pattern 6a, it is possible to suppress an increase in the temperature of the metal wire 10b1. This makes it possible to extend the product life of the power module 102.
  • the heat conductive sheet is composed of the graphite sheet 11 alone.
  • a heat conductive sheet is formed by a clad material in which a graphite sheet 11 and a metal thin film 16 are laminated.
  • the metal thin film 16 is shown as a lower layer and the graphite sheet 11 is shown as an upper layer, but the graphite sheet 11 may be a lower layer and the metal thin film 16 may be an upper layer.
  • the configuration of the power module of the third embodiment other than the heat conductive sheet is the same as that of the power modules 101 and 102 of the first embodiment or the second embodiment.
  • the graphite sheet 11 Since the graphite sheet 11 has low strength and is brittle, if the graphite sheet 11 alone constitutes a heat conductive sheet, the state will change due to the handling during shape processing or assembly, and the yield in product assembly will deteriorate. I am concerned. Therefore, by forming the heat conductive sheet with a clad material in which the graphite sheet 11 and the metal thin film 16 are superposed, it is possible to process or assemble the shape of the heat conductive sheet while having the high strength of the metal thin film 16. .. Further, the high thermal conductivity in the surface direction of the graphite sheet 11 suppresses heat generation of the metal wires 10b and 10b1.
  • the thickness of the metal thin film 16 is 100 ⁇ m and the thickness of the graphite sheet 11 is 100 ⁇ m or more and 400 ⁇ m or less. As described above, when the heat conductive sheet has an appropriate thickness, it is possible to easily change the shape or install the heat conductive sheet according to the wiring material.
  • FIG. 6 is a top view of the power module 104 of the fourth embodiment.
  • the power module 104 of the fourth embodiment is different from the configuration of the power module 102 of the second embodiment in that the graphite sheet 11 is formed with a hole 15 penetrating the sheet surface. Although eight holes 15 are formed in FIG. 6, it is sufficient that at least one hole 15 is formed.
  • the case 12 is filled with the sealing material 13 as shown in FIG. If air bubbles are contained inside the cured encapsulant, the insulation quality of the power module deteriorates depending on the place where the air bubbles are generated.
  • the holes 15 of the graphite sheet 11 allow bubbles generated between the graphite sheet 11 and the semiconductor chip to be extracted above the graphite sheet 11 and further extracted from the sealing material 13.
  • the diameter of the hole 15 is preferably 1.0 mm or more in order to remove air bubbles. Further, it is desirable that the outer circumference of the hole 15 is 1.0 mm or more away from the place where the graphite sheet 11 comes into contact with the metal wires 10a and 10b. If the hole 15 is installed in a place where air bubbles are likely to remain, the effect of removing air bubbles can be easily obtained.
  • the present embodiment may be combined with the third embodiment. That is, in the present embodiment, the heat conductive sheet is composed of the graphite sheet 11 and the clad material of the metal thin film 16, and the holes 15 penetrating the graphite sheet 11 and the metal thin film 16 are formed on the sheet surface of the heat conductive sheet. Is also good. In this case, since the heat conductive sheet has high strength due to the metal thin film 16, the holes 15 can be easily machined, and defects of the member itself can be reduced.
  • the power module 104 of the fourth embodiment is fitted to the base plate 1 and houses the insulating substrate 7, the semiconductor chips 81, 9a1, 9b1, the metal wires 10a, 10b, and the heat conductive sheet, and the case 12 and the case 12. It is filled inside and includes a semiconductor chip, metal wires 10a and 10b, and a sealing material 13 for sealing the heat conductive sheet, and penetrates the sheet surface at a position not overlapping with the metal wires 10a and 10b of the heat conductive sheet. The hole 15 is formed. As a result, bubbles that affect the insulation quality of the power module generated between the graphite sheet 11 and the semiconductor chip can be extracted above the graphite sheet 11 and further extracted from the sealing material 13.
  • each embodiment can be freely combined, and each embodiment can be appropriately modified or omitted within the scope of the invention.
  • the present invention has been described in detail, the above description is exemplary in all embodiments and the invention is not limited thereto. It is understood that innumerable variations not illustrated can be assumed without departing from the scope of the present invention.

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Abstract

本発明は、パワーモジュールにおける半導体チップ上の金属ワイヤの放熱性を向上することを目的とする。パワーモジュール（１０１）は、絶縁基板（７）の回路パターン（６ｂ）に搭載された少なくとも１つの半導体チップと、半導体チップの表面に接続される複数の金属ワイヤ（１０ａ，１０ｂ）と、金属ワイヤ（１０ａ，１０ｂ）に上方から接触する熱伝導シートと、を備える。金属ワイヤは、半導体チップの表面と回路パターン（６ａ）を接続する少なくとも１つの金属ワイヤ（１０ａ）と、半導体チップの表面上の２点を接続し、金属ワイヤ（１０ａ）と同電位である、少なくとも１つの金属ワイヤ（１０ｂ）と、を備える。熱伝導シートはグラファイトシート（１１）を含み、熱伝導シートのシート面は、少なくとも１つの金属ワイヤ（１０ａ）と、少なくとも１つの金属ワイヤ（１０ｂ）とに接触する。

Description

パワーモジュール
　この発明は、パワーモジュールにおける放熱性の向上に関する。
　従来、パワーモジュールでは、金属ワイヤを用いたボンディングにより半導体チップ上の配線が行われている。半導体チップ上の配線に金属ワイヤを使用すれば、配線形状を変更することにより、同一パッケージにおいて半導体チップのサイズまたは電極形状を変更した品種展開に対応することができる。
　特許文献１には、半導体チップの下側の接合における放熱性を上げる技術が開示されている。特許文献２には、封止材の放熱性を上げる技術が開示されている。
特開２０１９－０９６７３１号公報 特開２０１７－１０８０４６号公報
　パワーモジュールの大電流化や小型化により、パワーモジュールの通電時におけるワイヤ配線の温度が上昇する。ワイヤ配線の温度が上昇すると、発熱と冷却の温度サイクルにより半導体チップとワイヤボンド接合の寿命が低下したり、ワイヤ配線自体が溶断したりするという問題がある。
　本発明は、上記の問題点を解決するためになされたものであり、パワーモジュールにおける半導体チップ上の金属ワイヤの放熱性を向上することを目的とする。
　本発明のパワーモジュールは、ベース板と、ベース板上に設けられ回路パターンを有する絶縁基板と、絶縁基板の回路パターンに搭載された少なくとも１つの半導体チップと、半導体チップの表面に接続される複数の金属ワイヤと、金属ワイヤに上方から接触する熱伝導シートと、を備え、金属ワイヤは、半導体チップの表面と回路パターンを接続する少なくとも１つの第１金属ワイヤと、半導体チップの表面上の２点を接続し、第１金属ワイヤと同電位である、少なくとも１つの第２金属ワイヤと、を備え、熱伝導シートはグラファイトシートを含み、熱伝導シートのシート面は、少なくとも１つの第１金属ワイヤと、少なくとも１つの第２金属ワイヤとに接触する。
　本発明のパワーモジュールでは、グラファイトシートを含む熱伝導シートのシート面が、少なくとも１つの第１金属ワイヤと少なくとも１つの第２金属ワイヤとに接触する。従って、第２金属ワイヤの熱をグラファイトシートを通して第１金属ワイヤに伝え、第１金属ワイヤから回路パターンに放熱することにより、第２金属ワイヤの温度上昇を防ぐことができる。このように、半導体チップ上の金属ワイヤの放熱性が向上する。本発明の目的、特徴、態様、および利点は、以下の詳細な説明と添付図面とによって、より明白となる。
実施の形態１のパワーモジュールの断面図である。 実施の形態２のパワーモジュールの等角投影図である。 実施の形態２のパワーモジュールの上面図である。 グラファイトシートを除いた実施の形態２のパワーモジュールの等角投影図である。 実施の形態３のパワーモジュールにおける熱伝導シートの構成を示す図である。 実施の形態４のパワーモジュールの上面図である。
　＜Ａ．実施の形態１＞
　図１は、実施の形態１のパワーモジュール１０１の断面図である。パワーモジュール１０１は、ベース板１、絶縁基板７、ダイオードチップ８１、トランジスタチップ９ａ１，９ｂ１、金属ワイヤ１０ａ，１０ｂ，１０ｃ、グラファイトシート１１、ケース１２、および封止材１３を備えて構成される。
　ベース板１の上面に絶縁基板７が形成される。絶縁基板７は、絶縁基材４と、絶縁基材４の下面に接合材３で接合された金属からなる下面パターン２と、絶縁基材４の上面に接合材５で接合された金属からなる回路パターン６ａ，６ｂ，６ｃとを備えて構成される。ベース板１の上面には絶縁基板７の下面パターン２が形成される。
　回路パターン６ｂ上には、半田または焼結材等の接合材により、ダイオードチップ８１およびトランジスタチップ９ａ１，９ｂ１が接合される。ダイオードチップ８１は、トランジスタチップ９ａ１，９ｂ１に対する還流ダイオードとして機能する。ここで、ダイオードチップ８１およびトランジスタチップ９ａ１，９ｂ１は半導体チップの一例である。パワーモジュール１０１には、これらの半導体チップに代えて他の半導体チップが搭載されていても良いし、一つの半導体チップが搭載されていても良い。
　半導体チップの上面には、金属ワイヤによるワイヤ配線が施される。半導体チップの上面に接続される金属ワイヤのうち、ダイオードチップ８１と回路パターン６ａとを接続する金属ワイヤを金属ワイヤ１０ａとする。金属ワイヤ１０ａを第１金属ワイヤとも称する。また、ダイオードチップ８１上の２か所、ダイオードチップ８１とトランジスタチップ９ａ１、トランジスタチップ９ａ１上の２か所、トランジスタチップ９ａ１とトランジスタチップ９ａ２、トランジスタ９ａ２上の２か所を接続する金属ワイヤを、金属ワイヤ１０ｂとする。金属ワイヤ１０ｂを第２金属ワイヤとも称する。また、トランジスタチップ９ａ２と回路パターン６ｃとは、金属ワイヤ１０ｃにより接続される。
　金属ワイヤ１０ｃは、トランジスタチップ９ａ２のゲート電極と回路パターン６ｃとを接続するゲートワイヤであり、ゲート電極と同じ電位（以下、「ゲート電位」とも称する）を有している。これに対して金属ワイヤ１０ａと金属ワイヤ１０ｂは、トランジスタチップ９ａ２のエミッタ電極と同じ電位（以下、「エミッタ電位」とも称する）を有している。
　グラファイトシート１１は、半導体チップの上面に接続された金属ワイヤ１０ａ，１０ｂ上に、そのシート面を金属ワイヤ１０ａ，１０ｂと接触して設けられる。グラファイトシート１１は、厚み方向の熱伝導率が１Ｗ／ｍＫと低いのに対して、面方向への熱伝導率が５００Ｗ／ｍＫ以上と高い、異方性熱伝導材料である。そのため、金属ワイヤ１０ｂの熱がグラファイトシート１１によって金属ワイヤ１０ａに伝わり、さらに金属ワイヤ１０ａから回路パターン６ａに放熱される。これにより、金属ワイヤ１０ｂの温度を下げることができる。このように、パワーモジュール１０１においてグラファイトシート１１は、金属ワイヤ１０ｂの熱を面方向に伝導する熱伝導シートとして機能する。なお、グラファイトシート１１が金属ワイヤ１０ｃに接触しないのは、金属ワイヤ１０ｃが金属ワイヤ１０ａ，１０ｂとは異なる電位だからである。
　ベース板１は、ケース１２と嵌合しており、ケース１２により、ベース板１、絶縁基板７、ダイオードチップ８１、トランジスタチップ９ａ１，９ｂ１、金属ワイヤ１０ａ，１０ｂ，１０ｃ、グラファイトシート１１が収容されている。ケース１２の内部には、ゲルまたはエポキシ樹脂からなる封止材１３が充填され、封止材１３によりダイオードチップ８１、トランジスタチップ９ａ１，９ｂ１、金属ワイヤ１０ａ，１０ｂ，１０ｃ、グラファイトシート１１が封止されている。
　図１において、グラファイトシート１１は全ての金属ワイヤ１０ｂに接触しているが、金属ワイヤ１０ａと、金属ワイヤ１０ａと同電位を有する少なくとも１つの金属ワイヤ１０ｂに接している限り、上記の放熱効果を得ることができる。但し、グラファイトシート１１が接触する金属ワイヤ１０ｂの数が多いほど、多くの金属ワイヤ１０ｂの熱を回路パターン６ａに放熱することができる。
　従来、パワーモジュールの半導体チップ上の発熱は、半導体チップ下の接合を通してベース板１へと伝わり、ベース板１から冷却フィンへ放熱される。しかし、パワーモジュールに通電する電流が増加すると、半導体チップからの伝熱または金属ワイヤ自体の通電電流による発熱によって、金属ワイヤが高温になる。これに対して、実施の形態１のパワーモジュール１０１では、金属ワイヤ１０ｂの熱がグラファイトシート１１によってベース板１の面に平行な方向に放熱されるため、金属ワイヤ１０ｂの温度上昇が緩和される。
　以上に説明したように、実施の形態１のパワーモジュール１０１は、ベース板１と、ベース板１上に設けられ回路パターン６ａ，６ｂ，６ｃを有する絶縁基板７と、絶縁基板７の回路パターン６ｂに搭載された半導体チップであるダイオードチップ８１およびトランジスタチップ９ａ１，９ｂ１と、半導体チップの表面に接続される複数の金属ワイヤと、金属ワイヤに上方から接触する熱伝導シートと、を備える。金属ワイヤは、ダイオードチップ８１の表面と回路パターン６ａを接続する少なくとも１つの第１金属ワイヤである金属ワイヤ１０ａと、半導体チップの表面上の２点を接続し、金属ワイヤ１０ａと同電位である、少なくとも１つの第２金属ワイヤである金属ワイヤ１０ｂと、を備える。熱伝導シートはグラファイトシート１１を含み、熱伝導シートのシート面は、少なくとも１つの金属ワイヤ１０ａと、少なくとも１つの金属ワイヤ１０ｂとに接触する。従って、金属ワイヤ１０ｂの熱がグラファイトシート１１を通して金属ワイヤ１０ａに伝え、金属ワイヤ１０ａから回路パターン６ａに放熱されることにより、金属ワイヤ１０ｂの温度上昇を防ぐことができる。
　＜Ｂ．実施の形態２＞
　図２は、実施の形態２のパワーモジュール１０２の等角投影図である。図３は、パワーモジュール１０２の上面図である。図４は、パワーモジュール１０２のグラファイトシート１１を設置する前の状態を示した等角投影図である。
　パワーモジュール１０２は、実施の形態１のパワーモジュール１０１の構成に加えて、ダイオードチップ８２－８８と、トランジスタチップ９ａ２－９ａ８，９ｂ２－９ｂ８を備えている。言い換えれば、パワーモジュール１０２には、１つのダイオードチップ８ｎと、２つのトランジスタチップ９ａｎ，９ｂｎからなる半導体チップの組が、８個並列に搭載されている。なお、ｎは１から８の自然数である。半導体チップの各組における金属ワイヤの接続状況は同一である。図３の領域１４にトランジスタチップが配置され、領域１５にダイオードチップが配置されている。
　図２－図４では、金属ワイヤ１０ａ，１０ｂをリボンワイヤとして示しているが、１本の線ワイヤであっても良い。線ワイヤであれば、リボンワイヤに比べてチップサイズに対する制約が少なく、斜め方向へのボンディングも可能である。
　ダイオードチップ８ｎは、トランジスタチップ９ａｎ，９ｂｎの還流ダイオードとして機能する。なお、半導体チップが並列に搭載されていることは、図４において、トランジスタチップ９ａ１－９ａ８の夫々に、同じ回路パターン６ｃからゲートワイヤである金属ワイヤ１０ｃが接続されていることに表されている。
　これら並列に搭載された複数の半導体チップの間は、金属ワイヤにより接続され、電気回路が形成される。例えば図４において、トランジスタチップ９ｂ１とトランジスタチップ９ｂ２は金属ワイヤ１０ｂ１により接続され、トランジスタチップ９ｂ２とトランジスタチップ９ａ３は金属ワイヤ１０ｂ１により接続されている。これらの金属ワイヤ１０ｂ１は、金属ワイヤ１０ａと同電位であり、金属ワイヤ１０ｂと同様、第２金属ワイヤとも称する。そして、これら並列に搭載された複数の半導体チップは、同時に通電され、パワーモジュール１０２の大電流化が実現する。しかし、上記の金属ワイヤ１０ｂ１は、両端の半導体チップが同時に通電していることからボンド点が発熱しており、金属ワイヤ１０ｂ１自体に通電が行われた場合には、半導体チップ上よりも高温になってしまう。
　この点、パワーモジュール１０２においてグラファイトシート１１は、実施の形態１の特徴に加えて、トランジスタチップ９ａ１，９ｂ１，ダイオードチップ８１の組と、トランジスタチップ９ａ２，９ｂ２，ダイオードチップ８２の組とを接続する金属ワイヤ１０ｂ１の上部に、当該金属ワイヤ１０ｂ１に接触するように形成される。
　以上に説明したように、実施の形態２のパワーモジュール１０２は、同じ回路パターン６ａまたは同電位の回路パターンに制御端子であるゲート端子が接続された複数の半導体チップであるトランジスタチップ９ｂ１－９ｂ８を含み、熱伝導シートのシート面は、トランジスタチップ９ｂ１－９ｂ８を接続する第２金属ワイヤである金属ワイヤ１０ｂ１に接触する。金属ワイヤ１０ｂ１の両端の半導体チップ９ｂ１－９ｂ８は同時に通電され発熱するため、金属ワイヤ１０ｂ１は半導体チップ９ｂ１－９ｂ８上よりも高温になる場合があるが、グラファイトシート１１を通して金属ワイヤ１０ｂ１の熱を金属ワイヤ１０ａに伝導し、金属ワイヤ１０ａから回路パターン６ａへ放熱することにより、金属ワイヤ１０ｂ１の温度上昇を抑制することができる。これにより、パワーモジュール１０２の製品寿命を延ばすことが可能となる。
　＜Ｃ．実施の形態３＞
　実施の形態１，２のパワーモジュール１０１，１０２において、熱伝導シートはグラファイトシート１１単体で構成された。これに対して実施の形態３のパワーモジュールでは、図５に示すように、グラファイトシート１１と金属薄膜１６が重ねあわされたクラッド材によって熱伝導シートが構成される。図５では、金属薄膜１６を下層、グラファイトシート１１を上層として示しているが、グラファイトシート１１が下層、金属薄膜１６が上層であっても良い。熱伝導シート以外の実施の形態３のパワーモジュールの構成は、実施の形態１または実施の形態２のパワーモジュール１０１，１０２と同様である。
　グラファイトシート１１は、材料自体の強度が低く脆いため、グラファイトシート１１単体で熱伝導シートを構成すると、形状の加工またはアセンブリ時のハンドリングで状態が変化してしまい、製品組み立てにおける歩留の悪化が懸念される。そこで、グラファイトシート１１と金属薄膜１６が重ね合わせたクラッド材により熱伝導シートを構成することで、金属薄膜１６が持つ高い強度を持った状態で熱伝導シートの形状の加工またはアセンブリが可能となる。また、グラファイトシート１１が持つ面方向への高い熱伝導性により金属ワイヤ１０ｂ，１０ｂ１の発熱が抑えられる。
　金属薄膜１６の厚みは１００μｍであり、グラファイトシート１１の厚みは１００μｍ以上４００μｍ以下であることが望ましい。このように、熱伝導シートが適切な厚みを有することで、配線材料に合わせた形状の変更または設置を容易に行うことが可能となる。
　＜Ｄ．実施の形態４＞
　図６は、実施の形態４のパワーモジュール１０４の上面図である。実施の形態４のパワーモジュール１０４は、実施の形態２のパワーモジュール１０２の構成と比較すると、グラファイトシート１１に、そのシート面を貫通する穴１５が形成されている点が異なる。図６には、８個の穴１５が形成されているが、穴１５は少なくとも１つ形成されていれば良い。
　パワーモジュール１０４を形成する上で、図１に示すように、ケース１２内に封止材１３が充填される。硬化した封止材の内部に気泡が含まれると、気泡の発生した場所によってはパワーモジュールの絶縁品質が低下してしまう。パワーモジュール１０４では、グラファイトシート１１の穴１５により、グラファイトシート１１と半導体チップの間に生じた気泡をグラファイトシート１１の上方へ抜き出し、さらに封止材１３から抜き出すことが可能となる。気泡を抜くため、穴１５の直径は１．０ｍｍ以上が望ましい。また、穴１５の外周は、グラファイトシート１１の金属ワイヤ１０ａ，１０ｂと接触する場所から１．０ｍｍ以上離れていることが望ましい。穴１５は、特に気泡が残りやすい場所に設置されると、気泡を抜く効果が得られやすい。
　また、本実施の形態は実施の形態３と組み合わせても良い。つまり、本実施の形態において、熱伝導シートを、グラファイトシート１１と金属薄膜１６のクラッド材で構成し、熱伝導シートのシート面にグラファイトシート１１と金属薄膜１６を貫通する穴１５を形成しても良い。この場合、熱伝導シートが金属薄膜１６による高い強度を有しているため、穴１５の加工がしやすくなり、部材自体の不良を減らすことができる。
　すなわち、実施の形態４のパワーモジュール１０４は、ベース板１に嵌合し、絶縁基板７、半導体チップ８１，９ａ１，９ｂ１、金属ワイヤ１０ａ，１０ｂ、熱伝導シートを収容するケース１２と、ケース１２内部に充填され、半導体チップ、金属ワイヤ１０ａ，１０ｂ、熱伝導シートを封止する封止材１３と、を備え、熱伝導シートの金属ワイヤ１０ａ，１０ｂと重ならない位置に、シート面を貫通する穴１５が形成されている。これにより、グラファイトシート１１と半導体チップの間に生じたパワーモジュールの絶縁品質に影響する気泡を、グラファイトシート１１の上方へ抜き出し、さらに封止材１３から抜き出すことが可能となる。
　なお、本発明は、その発明の範囲内において、各実施の形態を自由に組み合わせたり、各実施の形態を適宜、変形、省略したりすることが可能である。この発明は詳細に説明されたが、上記した説明は、すべての態様において、例示であって、この発明がそれに限定されるものではない。例示されていない無数の変形例が、この発明の範囲から外れることなく想定され得るものと解される。
　１　ベース板、２　下面パターン、３，５　接合材、４　絶縁基材、６ａ，６ｂ，６ｃ　回路パターン、７　絶縁基板、９ａ１－９ａ８，９ｂ１－９ｂ８　トランジスタチップ、１０ａ，１０ｂ，１０ｂ１，１０ｃ　金属ワイヤ、１１　グラファイトシート、１２　ケース、１３　封止材、１６　金属薄膜、１７　穴、８１－８８　ダイオードチップ、１０１，１０２，１０４　パワーモジュール。

Claims (5)

  1. 　ベース板と、
    　前記ベース板上に設けられ回路パターンを有する絶縁基板と、
    　前記絶縁基板の前記回路パターンに搭載された少なくとも１つの半導体チップと、
    　前記半導体チップの表面に接続される複数の金属ワイヤと、
    　前記金属ワイヤに上方から接触する熱伝導シートと、を備え、
    　前記金属ワイヤは、
    　前記半導体チップの表面と前記回路パターンを接続する少なくとも１つの第１金属ワイヤと、
    　前記半導体チップの表面上の２点を接続し、前記第１金属ワイヤと同電位である、少なくとも１つの第２金属ワイヤと、を備え、
    　前記熱伝導シートはグラファイトシートを含み、
    　前記熱伝導シートのシート面は、少なくとも１つの前記第１金属ワイヤと、少なくとも１つの前記第２金属ワイヤとに接触する、
    パワーモジュール。
  2. 　前記半導体チップは、同じ前記回路パターンまたは同電位の前記回路パターンに制御端子が接続された複数の半導体チップを含み、
    　前記熱伝導シートのシート面は、前記複数の半導体チップを接続する前記第２金属ワイヤに接触する、
    請求項１に記載のパワーモジュール。
  3. 　前記熱伝導シートは、金属薄膜と前記グラファイトシートが重なったクラッド材である、
    請求項１または請求項２に記載のパワーモジュール。
  4. 　前記金属薄膜の厚みは１００μｍであり、
    　前記グラファイトシートの厚みは１００μｍ以上４００μｍ以下である、
    請求項３に記載のパワーモジュール。
  5. 　前記ベース板に嵌合し、前記絶縁基板、前記半導体チップ、前記金属ワイヤ、前記熱伝導シートを収容するケースと、
    　前記ケース内部に充填され、前記半導体チップ、前記金属ワイヤ、前記熱伝導シートを封止する封止材と、をさらに備え、
    　前記熱伝導シートの、前記金属ワイヤと重ならない位置に、シート面を貫通する穴が形成されている、
    請求項１から請求項４のいずれか１項に記載のパワーモジュール。
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JP2003249607A (ja) * 2002-02-26 2003-09-05 Seiko Epson Corp 半導体装置及びその製造方法、回路基板並びに電子機器
JP2008235492A (ja) * 2007-03-20 2008-10-02 Matsushita Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
JP2018166184A (ja) * 2017-03-28 2018-10-25 株式会社ケーヒン パワーモジュール

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US20120032350A1 (en) * 2010-08-06 2012-02-09 Conexant Systems, Inc. Systems and Methods for Heat Dissipation Using Thermal Conduits
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JP2003249607A (ja) * 2002-02-26 2003-09-05 Seiko Epson Corp 半導体装置及びその製造方法、回路基板並びに電子機器
JP2008235492A (ja) * 2007-03-20 2008-10-02 Matsushita Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
JP2018166184A (ja) * 2017-03-28 2018-10-25 株式会社ケーヒン パワーモジュール

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