WO2021042567A1 - 一种量子点薄膜的制备方法 - Google Patents

一种量子点薄膜的制备方法 Download PDF

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WO2021042567A1
WO2021042567A1 PCT/CN2019/118905 CN2019118905W WO2021042567A1 WO 2021042567 A1 WO2021042567 A1 WO 2021042567A1 CN 2019118905 W CN2019118905 W CN 2019118905W WO 2021042567 A1 WO2021042567 A1 WO 2021042567A1
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quantum dot
dot film
preparing
electrode layer
film according
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PCT/CN2019/118905
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French (fr)
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陈黎暄
赵金阳
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Tcl华星光电技术有限公司
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Priority to US16/623,405 priority Critical patent/US11201287B2/en
Publication of WO2021042567A1 publication Critical patent/WO2021042567A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/125—Deposition of organic active material using liquid deposition, e.g. spin coating using electrolytic deposition e.g. in-situ electropolymerisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating

Definitions

  • the invention relates to the field of display technology, in particular to a method for preparing a quantum dot film.
  • Quantum dot display technology has advantages in color gamut coverage, color control accuracy, red, green and blue color purity, etc. It can achieve full color gamut display and restore image colors most truly.
  • Quantum dots are semiconductor nanocrystals with a radius smaller than or close to the Bohr radius, and most of them are three-dimensional nanomaterials composed of group II-VI or group III-V elements. Due to the quantum confinement effect, the transportation of electrons and holes inside is restricted, so that the continuous energy band structure becomes a separate energy level structure. When the size of the quantum dot is different, the quantum confinement degree of the electron and the hole is different, and the discrete energy level structure is different. After being excited by external energy, quantum dots of different sizes emit light of different wavelengths, that is, light of various colors.
  • quantum dots by adjusting the size of quantum dots, the emission wavelength range can cover infrared and the entire visible light band, and the emitted light band is narrow, and the color saturation is high; the quantum dot material has high quantum conversion efficiency; and the material performance is stable.
  • the purpose of the present invention is to provide a method for preparing a quantum dot film, which can improve the stability of the quantum dot and further improve the display effect.
  • the present invention provides a method for preparing a quantum dot film, which includes:
  • An electrode layer is provided, the electrode layer includes a plurality of strip-shaped electrodes arranged at intervals; wherein the strip-shaped electrode at least corresponds to at least one sub-pixel in the pixel column of the same color in the display panel; Equal width
  • the quantum dot solution includes quantum dots
  • a driving voltage is applied to the strip electrode, so that the quantum dots in the quantum dot solution gather in the area corresponding to the strip electrode; the polarity of the driving voltage is opposite to the polarity of the quantum dot; The degree of aggregation of the quantum dots is proportional to the magnitude of the driving voltage;
  • the assembled quantum dot solution is cured to obtain a quantum dot film.
  • the quantum dot film includes a plurality of light-emitting columns, and the positions of the light-emitting columns correspond to the positions of the strip electrodes.
  • the present invention also provides a method for preparing the quantum dot film, including:
  • the electrode layer including a plurality of strip electrodes arranged at intervals; wherein the strip electrodes at least correspond to at least one sub-pixel in the pixel column of the same color in the display panel;
  • the quantum dot solution includes quantum dots
  • a driving voltage is applied to the strip electrode, so that the quantum dots in the quantum dot solution gather in the area corresponding to the strip electrode; the polarity of the driving voltage is opposite to the polarity of the quantum dot;
  • the assembled quantum dot solution is cured to obtain a quantum dot film.
  • the quantum dot film includes a plurality of light-emitting columns, and the positions of the light-emitting columns correspond to the positions of the strip electrodes.
  • the preparation method of the quantum dot film of the present invention includes providing an electrode layer including a plurality of strip electrodes arranged at intervals; coating a quantum dot solution on the electrode layer; and the quantum dot solution includes quantum dots. Dots; apply a driving voltage to the strip electrode, so that the quantum dots in the quantum dot solution gather in the area corresponding to the strip electrode; the polarity of the driving voltage is opposite to the polarity of the quantum dot ; Curing the aggregated quantum dot solution to obtain a quantum dot film, the quantum dot film includes a plurality of light-emitting columns, the positions of the light-emitting columns correspond to the positions of the strip electrodes, because the quantum dot solution is driven by an electric field It is patterned, thereby avoiding damage to the quantum dots, improving the stability of the quantum dots, and further improving the display effect.
  • Figure 1 is the first top view of the electrode layer of the present invention
  • Figure 2 is a second top view of the electrode layer of the present invention.
  • Fig. 3 is a top view of the quantum dot film corresponding to Fig. 1 of the present invention.
  • Fig. 4 is a schematic structural diagram of the fourth step of the method for preparing a quantum dot film of the present invention.
  • FIG. 1 is a schematic diagram of the structure of the electrode layer of the present invention.
  • Electrode layer including a plurality of strip electrodes arranged at intervals;
  • an electrode layer 10 is prepared in advance, and the electrode layer 10 includes a plurality of strip electrodes 11 arranged at intervals.
  • the display panel includes a plurality of pixel columns, and the colors of two adjacent pixel columns are different. That is, the colors of pixels in the same column are the same.
  • the display panel includes a column of red pixels, a column of blue pixels, and a column of green pixels.
  • the electrode layer 10 may be a transparent electrode layer, and the material of the electrode layer 10 is, for example, indium tin oxide.
  • the strip electrode 11 may correspond to one sub-pixel in the pixel column of the same color in the display panel. That is, the strip electrode covers at least one sub-pixel in the pixel column of the corresponding color.
  • the strip electrodes 11 may also correspond to the pixel columns of the same color in the display panel. That is, the strip-shaped electrode 11 corresponds to the pixel column of the corresponding color. It is understandable that the strip electrode 11 may also correspond to at least two sub-pixels in the pixel column of the same color. That is, the strip-shaped electrode corresponds to at least two sub-pixels in the pixel column of the corresponding color.
  • the widths of the strip electrodes 11 are equal. Wherein, the distance between two adjacent strip electrodes 11 in the same row is equal.
  • the quantum dot solution is coated on the electrode layer 10.
  • the quantum dot solution is formed by uniformly dispersing quantum dots in an organic solvent.
  • the quantum dot solution can also be other quantum dot solutions, such as perovskite quantum dot solutions.
  • a driving voltage is applied to the strip electrode 11 so that the quantum dots in the quantum dot solution are gathered in a region corresponding to the strip electrode 11.
  • the degree of aggregation of the quantum dots is proportional to the magnitude of the driving voltage.
  • the degree of aggregation is also the degree of aggregation.
  • the driving voltage may be a direct current voltage, and the duration of application of the direct current voltage can be set based on experience.
  • the polarity of the driving voltage is opposite to that of the quantum dot.
  • the amplitude of the driving voltage may range from 1V to 100V.
  • this step may specifically include: curing the aggregated quantum dot solution by ultraviolet light or heating to form a quantum dot film.
  • the quantum dot film 20 includes a plurality of light-emitting columns 21, and the positions of the light-emitting columns 21 correspond to the positions of the strip electrodes 11.
  • the quantum dot film further includes a plurality of non-luminous columns 22, and the non-luminous columns 22 are arranged between two adjacent luminous columns 21.
  • the quantum dot film of this embodiment can be used to make an organic light-emitting diode, and is specifically used to form an organic light-emitting layer, that is, the material of the organic light-emitting layer can be a quantum dot film. It can be understood that the quantum dot film corresponding to FIG. 2 is similar to this.
  • the present invention also provides a method for preparing a quantum dot film.
  • the difference between the method for preparing a quantum dot film in this embodiment and the previous embodiment is that after the step of curing the aggregated quantum dot solution, the method of include:
  • the electrode layer of this embodiment is a non-transparent electrode layer.
  • the electrode layer 10 under the quantum dot film 20 is peeled off.
  • this step can also be applied to the first embodiment to reduce the thickness of the quantum dot film, thereby reducing the overall thickness of the display panel.
  • the quantum dot solution is focused under the electric field drive, that is, the patterning process is completed autonomously, thereby avoiding damage to the quantum dots, improving the stability of the quantum dots, and improving the display effect.
  • the preparation method of the quantum dot film of the present invention includes providing an electrode layer including a plurality of strip electrodes arranged at intervals; coating a quantum dot solution on the electrode layer; and the quantum dot solution includes quantum dots. Dots; apply a driving voltage to the strip electrode, so that the quantum dots in the quantum dot solution gather in the area corresponding to the strip electrode; the polarity of the driving voltage is opposite to the polarity of the quantum dot ; Curing the aggregated quantum dot solution to obtain a quantum dot film, the quantum dot film includes a plurality of light-emitting columns, the positions of the light-emitting columns correspond to the positions of the strip electrodes, because the quantum dot solution is driven by an electric field It is patterned, thereby avoiding damage to the quantum dots, improving the stability of the quantum dots, and further improving the display effect.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
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  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种量子点薄膜的制备方法，该方法包括：提供一电极层（10），所述电极层（10）包括多个间隔设置的条状电极（11）；将量子点溶液涂布于所述电极层（10）上；向所述条状电极（11）通入驱动电压，以使所述量子点溶液中的量子点向与所述条状电极（11）对应的区域聚集；对聚集后的量子点溶液进行固化，得到量子点薄膜（20）。

Description

一种量子点薄膜的制备方法 技术领域
本发明涉及显示技术领域，特别是涉及一种量子点薄膜的制备方法。
 背景技术
量子点显示技术在色域覆盖率、色彩控制精确性、红绿蓝色彩纯净度等方面具有优势，能够实现全色域显示，最真实还原图像色彩。
量子点为半径小于或接近于波尔半径的半导体纳米晶体，大部分由Ⅱ-Ⅵ族或Ⅲ-Ⅴ族元素组成的三个维度尺寸纳米材料。由于量子限域效应，其内部的电子和空穴的运输受到限制，使得连续的能带结构变成分离的能级结构。当量子点的尺寸不同时，电子与空穴的量子限域程度不一样，分立的能级结构不同。在受到外来能量激发后，不同尺寸的量子点即发出不同波长的光，也就是各种颜色的光。
量子点的优势在于：通过调控量子点的尺寸，可以实现发光波长范围覆盖到红外及整个可见光波段，且发射光波段窄，色彩饱和度高；量子点材料量子转换效率高；材料性能稳定。
 技术问题
目前采用光刻制程来制备量子点薄膜，但是光刻制程由于需要经过曝光、显影过程，因此会降低量子点的稳定性。
因此，有必要提供一种量子点薄膜的制备方法，以解决现有技术所存在的问题。
 技术解决方案
本发明的目的在于提供一种量子点薄膜的制备方法，能够提高量子点的稳定性，进而提高显示效果。
为解决上述技术问题，本发明提供一种量子点薄膜的制备方法，其包括：
提供一电极层，所述电极层包括多个间隔设置的条状电极；其中所述条状电极至少与显示面板中的同一颜色的像素列中的至少一个子像素对应；所述条状电极的宽度相等；
将量子点溶液涂布于所述电极层上；所述量子点溶液包括量子点；
向所述条状电极通入驱动电压，以使所述量子点溶液中的量子点向与所述条状电极对应的区域聚集；所述驱动电压的极性与量子点的极性相反；所述量子点的聚集度与所述驱动电压的大小成正比；以及
对聚集后的量子点溶液进行固化，得到量子点薄膜，所述量子点薄膜包括多个发光列，所述发光列的位置与所述条状电极的位置对应。
本发明还提供一种量子点薄膜的制备方法，包括：
提供一电极层，所述电极层包括多个间隔设置的条状电极；其中所述条状电极至少与显示面板中的同一颜色的像素列中的至少一个子像素对应；
将量子点溶液涂布于所述电极层上；所述量子点溶液包括量子点；
向所述条状电极通入驱动电压，以使所述量子点溶液中的量子点向与所述条状电极对应的区域聚集；所述驱动电压的极性与量子点的极性相反；
对聚集后的量子点溶液进行固化，得到量子点薄膜，所述量子点薄膜包括多个发光列，所述发光列的位置与所述条状电极的位置对应。
 有益效果
本发明的量子点薄膜的制备方法，包括提供一电极层，所述电极层包括多个间隔设置的条状电极；将量子点溶液涂布于所述电极层上；所述量子点溶液包括量子点；向所述条状电极通入驱动电压，以使所述量子点溶液中的量子点向与所述条状电极对应的区域聚集；所述驱动电压的极性与量子点的极性相反；对聚集后的量子点溶液进行固化，得到量子点薄膜，所述量子点薄膜包括多个发光列，所述发光列的位置与所述条状电极的位置对应，由于采用电场驱动量子点溶液使其图案化，因此避免对量子点造成损坏，提高了量子点的稳定性，进而提高了显示效果。
 附图说明
图1为本发明电极层的第一种俯视图；
图2为本发明电极层的第二种俯视图；
图3为本发明图1对应的量子点薄膜的俯视图。
图4为本发明量子点薄膜制备方法第四步的结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
请参照图1至图2，图1为本发明电极层的结构示意图。
本实施例的量子点薄膜的制备方法包括：
S101、提供一电极层，所述电极层包括多个间隔设置的条状电极；
例如，如图1所示，预先制备电极层10，该电极层10包括多个间隔设置的条状电极11。其中显示面板包括多个像素列，相邻两个像素列的颜色不同。也即位于同一列的像素的颜色相同。比如显示面板包括红色像素列、蓝色像素列以及绿色像素列。其中所述电极层10可为透明电极层，所述电极层10的材料比如为氧化铟锡。
其中，如图1所示，所述条状电极11可与显示面板中的同一颜色的像素列中的一个子像素对应。也即条状电极至少覆盖对应颜色的像素列中的一个子像素。当然，如图2所示，所述条状电极11也可与显示面板中的同一颜色的像素列对应。也即所述条状电极11与对应颜色的像素列对应。可以理解的，所述条状电极11也可与同一颜色的像素列中的至少两个子像素对应。也即条状电极与对应颜色的像素列中的至少两个子像素对应。
其中为了提高亮度的均一性，所述条状电极11的宽度相等。其中位于同一行中相邻两个所述条状电极11之间的间距相等。
S102、将量子点溶液涂布于所述电极层上；
例如，将量子点溶液涂布于电极层10上。在一实施方式中，量子点溶液是将量子点均匀分散于有机溶剂中形成的，当然可以理解的，量子点溶液还可以为其他量子点溶液，比如钙钛矿量子点溶液等。
S103、向所述条状电极通入驱动电压，以使所述量子点溶液中的量子点向与所述条状电极对应的区域聚集；
例如，如图3所示，向所述条状电极11通入驱动电压，以使所述量子点溶液中的量子点向与所述条状电极11对应的区域聚集。所述量子点的聚集度与所述驱动电压的大小成正比。聚集度也即为聚拢程度。在一实施方式中，该驱动电压可为直流电压，所述直流电压的施加的时间长短可以根据经验设置。其中所述驱动电压的极性与量子点的极性相反。
在一实施方式中，为了进一步提高所述量子点的聚集度，所述驱动电压的幅值范围可为1V至100V。
S104、对聚集后的量子点溶液进行固化，得到量子点薄膜。
例如，如图1和图3所示，在一实施方式中，该步骤可具体包括：采用紫外线或者加热方式对所述聚集后的量子点溶液进行固化，形成量子点薄膜。
所述量子点薄膜20包括多个发光列21，所述发光列的21位置与所述条状电极11的位置对应。所述量子点薄膜还包括多个非发光列22，所述非发光列22设于相邻两个发光列21之间。本实施例的量子点薄膜可以用于制作有机发光二极管，具体用于形成有机发光层，也即有机发光层的材料可以为量子点薄膜。可以理解的，图2对应的量子点薄膜与此类似。
本发明还提供一种量子点薄膜的制备方法，本实施例的量子点薄膜的制备方法与上一实施例的区别在于：本实施例在对聚集后的量子点溶液进行固化的步骤之后，还包括：
S105、将所述量子点薄膜下方的所述电极层去除。
例如，结合图4，本实施例的电极层为非透明电极层，为了提高透光效果，将所述量子点薄膜20下方的所述电极层10剥离。
可以理解的，该步骤同样可以适用于实施例一，以减小量子点薄膜的厚度，从而减小显示面板的整体厚度。
由于在电极层上施加驱动电压，使得量子点溶液在电场驱动下聚焦，也即自主完成图案化过程，因此避免对量子点造成损坏，提高了量子点的稳定性，进而提高了显示效果。
本发明的量子点薄膜的制备方法，包括提供一电极层，所述电极层包括多个间隔设置的条状电极；将量子点溶液涂布于所述电极层上；所述量子点溶液包括量子点；向所述条状电极通入驱动电压，以使所述量子点溶液中的量子点向与所述条状电极对应的区域聚集；所述驱动电压的极性与量子点的极性相反；对聚集后的量子点溶液进行固化，得到量子点薄膜，所述量子点薄膜包括多个发光列，所述发光列的位置与所述条状电极的位置对应，由于采用电场驱动量子点溶液使其图案化，因此避免对量子点造成损坏，提高了量子点的稳定性，进而提高了显示效果。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种量子点薄膜的制备方法，其包括：
    提供一电极层，所述电极层包括多个间隔设置的条状电极；其中所述条状电极至少与显示面板中的同一颜色的像素列中的至少一个子像素对应；所述条状电极的宽度相等；
    将量子点溶液涂布于所述电极层上；所述量子点溶液包括量子点；
    向所述条状电极通入驱动电压，以使所述量子点溶液中的量子点向与所述条状电极对应的区域聚集；所述驱动电压的极性与量子点的极性相反；所述量子点的聚集度与所述驱动电压的大小成正比；以及
    对聚集后的量子点溶液进行固化，得到量子点薄膜，所述量子点薄膜包括多个发光列，所述发光列的位置与所述条状电极的位置对应。
  2. 根据权利要求1所述的量子点薄膜的制备方法，其中所述条状电极与显示面板中的同一颜色的像素列对应。
  3. 根据权利要求1所述的量子点薄膜的制备方法，其中所述量子点薄膜还包括多个非发光列，所述非发光列设于相邻两个发光列之间。
  4. 根据权利要求1所述的量子点薄膜的制备方法，其中所述驱动电压的幅值范围为1V至100V。
  5. 根据权利要求1所述的量子点薄膜的制备方法，其中所述在对聚集后的量子点溶液进行固化的步骤之后，所述方法还包括：
    将所述量子点薄膜下方的所述电极层去除。
  6. 根据权利要求1所述的量子点薄膜的制备方法，其中所述电极层为透明电极层或者非透明电极层。
  7. 根据权利要求1所述的量子点薄膜的制备方法，其中所述对聚集后的量子点溶液进行固化的步骤包括：
    采用紫外线或者加热方式对所述聚集后的量子点溶液进行固化。
  8. 根据权利要求1所述的量子点薄膜的制备方法，其中所述量子点薄膜用于形成有机发光层。
  9. 根据权利要求1所述的量子点薄膜的制备方法，其中所述量子点溶液为钙钛矿量子点溶液。
  10. 一种量子点薄膜的制备方法，其包括：
    提供一电极层，所述电极层包括多个间隔设置的条状电极；其中所述条状电极至少与显示面板中的同一颜色的像素列中的至少一个子像素对应；
    将量子点溶液涂布于所述电极层上；所述量子点溶液包括量子点；
    向所述条状电极通入驱动电压，以使所述量子点溶液中的量子点向与所述条状电极对应的区域聚集；所述驱动电压的极性与量子点的极性相反；以及
    对聚集后的量子点溶液进行固化，得到量子点薄膜，所述量子点薄膜包括多个发光列，所述发光列的位置与所述条状电极的位置对应。
  11. 根据权利要求10所述的量子点薄膜的制备方法，其中所述条状电极与显示面板中的同一颜色的像素列对应。
  12. 根据权利要求10所述的量子点薄膜的制备方法，其中所述条状电极的宽度相等。
  13. 根据权利要求10所述的量子点薄膜的制备方法，其中所述量子点的聚集度与所述驱动电压的大小成正比。
  14. 根据权利要求10所述的量子点薄膜的制备方法，其中所述量子点薄膜还包括多个非发光列，所述非发光列设于相邻两个发光列之间。
  15. 根据权利要求10所述的量子点薄膜的制备方法，其中所述驱动电压的幅值范围为1V至100V。
  16. 根据权利要求10所述的量子点薄膜的制备方法，其中所述在对聚集后的量子点溶液进行固化的步骤之后，所述方法还包括：
    将所述量子点薄膜下方的所述电极层去除。
  17. 根据权利要求10所述的量子点薄膜的制备方法，其中所述电极层为透明电极层或者非透明电极层。
  18. 根据权利要求10所述的量子点薄膜的制备方法，其中所述对聚集后的量子点溶液进行固化的步骤包括：
    采用紫外线或者加热方式对所述聚集后的量子点溶液进行固化。
  19. 根据权利要求10所述的量子点薄膜的制备方法，其中所述量子点薄膜用于形成有机发光层。
  20. 根据权利要求10所述的量子点薄膜的制备方法，其中所述量子点溶液为钙钛矿量子点溶液。
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