WO2021051493A1 - 显示面板和显示面板的制作方法 - Google Patents

显示面板和显示面板的制作方法 Download PDF

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Publication number
WO2021051493A1
WO2021051493A1 PCT/CN2019/115517 CN2019115517W WO2021051493A1 WO 2021051493 A1 WO2021051493 A1 WO 2021051493A1 CN 2019115517 W CN2019115517 W CN 2019115517W WO 2021051493 A1 WO2021051493 A1 WO 2021051493A1
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Prior art keywords
light
quantum dot
pixel defining
display panel
dot material
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PCT/CN2019/115517
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English (en)
French (fr)
Inventor
徐鸣
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深圳市华星光电半导体显示技术有限公司
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Priority to US16/618,371 priority Critical patent/US11329112B2/en
Publication of WO2021051493A1 publication Critical patent/WO2021051493A1/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer

Definitions

  • the present invention relates to the field of display technology, in particular to a display panel and a manufacturing method of the display panel.
  • QD-OLED Quantum Dot organic light-emitting diode
  • QD-OLED Quantum Dot organic light-emitting diode
  • the QD-OLED adopts a thin-film stack structure, which specifically includes a multilayer organic layer sandwiched between electrodes on both sides.
  • a blue organic light-emitting diode is used as a light source, and a quantum dot film is added above the blue organic light-emitting diode, and under the excitation of the blue light emitted by the blue organic light-emitting diode, light of different colors is formed.
  • the light emitted toward both sides of the display panel is not effectively used, which reduces the luminous efficiency.
  • the purpose of the present invention is to provide a display panel and a manufacturing method of the display panel, which improve the luminous intensity of the display panel.
  • An embodiment of the present invention provides a display panel, which includes:
  • a plurality of pixel defining parts are arranged on the array substrate at intervals, the side surface of the pixel defining part has a quantum dot material, and the side surface is the pixel defining part and the adjacent pixel defining part Opposite side
  • a plurality of light-emitting parts the light-emitting part is arranged between two corresponding adjacent pixel definition parts, the light-emitting part is used to emit light around, the quantum dot material on the side surface of the pixel definition part It emits light under the excitation of the light.
  • the constituent material of the pixel defining part includes a host material and a doping material, and the doping material includes the quantum dot material.
  • the doping concentration of the quantum dot material in the pixel defining portion is not higher than 5%.
  • the side surface of the pixel defining part is provided with a coating, and the constituent material of the coating includes the quantum dot material.
  • the quantum dot material includes a first quantum dot material and/or a second quantum dot material, wherein the first quantum dot luminescent material is a yellow light quantum dot material, and the second quantum dot material includes Green light quantum dot material and red light quantum dot material.
  • the opposite sides of the two adjacent pixel defining portions have the same quantum dot material or have different quantum dot materials.
  • the constituent material of the light-emitting part includes a blue light-emitting material.
  • the display panel further includes a first optical film layer
  • the first optical film layer includes:
  • a red light conversion film layer where the red light conversion film layer is arranged opposite to the corresponding light-emitting part;
  • the green light conversion film layer is arranged opposite to the corresponding light-emitting part.
  • the display panel further includes a second optical film layer
  • the second optical film layer includes:
  • the red filter film is arranged on the red light conversion film layer
  • the green filter film layer is arranged on the filter conversion film layer
  • the blue filter film layer is arranged opposite to the corresponding light-emitting part.
  • the display panel further includes a cathode layer and a thin film encapsulation layer;
  • the cathode layer is arranged on the light-emitting part
  • the thin film encapsulation layer is disposed between the cathode layer and the first optical film layer or the second optical film layer disposed opposite to the cathode layer.
  • the embodiment of the present invention also provides a manufacturing method of a display panel, which includes:
  • the photoresist is processed to form a plurality of pixel defining portions arranged on the array substrate at intervals, so that the side surface of the pixel defining portion is doped with quantum dot material, and the side surface is the pixel defining portion and The opposite side of the adjacent pixel definition part;
  • a light-emitting part is formed between adjacent pixel defining parts, and the light-emitting part is used to emit light around, and the quantum dot material on the side surface of the pixel defining part emits light under the excitation of the light.
  • an embodiment of the present invention also provides a manufacturing method of a display panel, which includes:
  • a coating is provided on the opposite side of the pixel defining part and the adjacent pixel defining part, and the constituent material of the coating includes a quantum dot material;
  • a light-emitting part is formed between adjacent pixel defining parts, and the light-emitting part is used to emit light around, and the quantum dot material of the coating layer emits light under the excitation of the light.
  • the side surface of the pixel defining part is provided with a quantum dot material.
  • the quantum dot luminescent material can emit light under the excitation of the light emitted by the light emitting layer, thereby increasing the luminous intensity of the display panel.
  • FIG. 1 is a schematic structural diagram of a display panel provided by an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of another structure of a display panel provided by an embodiment of the present invention.
  • FIG. 3 is a schematic flowchart of a method for manufacturing a display panel provided by an embodiment of the present invention.
  • FIG. 4 is a schematic diagram of a scene of a method for manufacturing a display panel provided by an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of another process of a method for manufacturing a display panel according to an embodiment of the present invention.
  • FIG. 6 is a schematic diagram of another scene of a method for manufacturing a display panel provided by an embodiment of the present invention.
  • FIG. 1 is a schematic structural diagram of a display panel provided by an embodiment of the present invention.
  • the display panel 1 includes an array substrate 11, a plurality of pixel defining parts 12 and a plurality of light emitting parts 13.
  • the array substrate 11 may include a substrate and a thin film transistor layer.
  • the substrate may be a flexible substrate composed of flexible materials such as polyimide, polycarbonate, polyethersulfone, polyethylene terephthalate, polyethylene naphthalate, and polyarylate.
  • the plurality of pixel defining portions 12 are arranged on the array substrate 11 at intervals, and the side surface 121 of the pixel defining portion 12 has a quantum dot material.
  • the side surface 121 is a side of the pixel defining portion 12 opposite to the adjacent pixel defining portion 12.
  • the constituent material of the pixel defining portion 12 includes a host material and a doped material, wherein the host material includes a photoresist material, and the doped material includes the quantum dot material. That is, as shown in FIG. 1, the quantum dot material a is distributed in the pixel defining portion 12 so that the side surface 121 of the pixel defining portion 12 has the quantum dot material a.
  • the doping concentration of the quantum dot material in the pixel defining portion 12 is not higher than 5%, which can avoid the low concentration of the quantum dot material causing the conversion rate of the quantum dot material to emit light, and the excessive concentration can also prevent the pixel from being affected by the high concentration.
  • the defining part 12 is formed.
  • the side surface 121 of the pixel defining portion 12 is provided with a coating 122.
  • the constituent material of the coating 122 includes quantum dot materials. At this time, the quantum dot material is only distributed on the side surface 121 of the pixel defining part 12, which can reduce the use of quantum dot material and reduce the cost.
  • the quantum dot material includes a first quantum dot material and/or a second quantum dot material, wherein the first quantum dot light-emitting material is a yellow light quantum dot material, and the second quantum dot material includes a green light quantum dot material and a red light quantum dot material.
  • the opposite side surfaces 121 of the two adjacent pixel defining portions 12 have the same quantum dot material or have different quantum dot materials.
  • FIG. 2 there are four pixel defining parts 12 in total, from left to right: a first pixel defining part 12a, a second pixel defining part 12b, a third pixel defining part 12c, and a fourth pixel defining part 12d.
  • the side surfaces of the first pixel defining portion 12a and the second pixel defining portion 12b opposite to each other both have the yellow light quantum dot material a1, that is, the opposite side surfaces of two adjacent pixel defining portions have the same quantum dot material.
  • the side of the second pixel defining portion 12b opposite to the third pixel defining portion 12c has a yellow light quantum dot material a1
  • the side of the third pixel defining portion 12c opposite to the second pixel defining portion 12b has a red quantum dot luminescent material a2, That is, the opposite sides of the two adjacent pixel defining parts have different quantum dot materials.
  • the third pixel defining portion 12c and the fourth pixel defining portion 12d opposite sides have yellow light quantum dot material a1
  • on the fourth pixel defining portion 12d and the third pixel defining portion 12c opposite sides have green light quantum dots
  • the point light-emitting material a3 that is, the opposite side surfaces of two adjacent pixel defining parts have different quantum dot materials.
  • Each light-emitting part 13 is arranged between two corresponding adjacent pixel defining parts 12. Wherein, the light-emitting part 13 is used to emit light around, so that the quantum dot material on the side surface 121 of the pixel defining part 12 emits light under the excitation of light, thereby increasing the luminous intensity of the display panel 1.
  • the constituent material of the light-emitting portion 13 includes a blue light-emitting material.
  • the blue light-emitting material may be a blue quantum dot light-emitting material or a blue organic light-emitting material.
  • the display panel 1 further includes an anode layer 14 and a cathode layer 15.
  • the anode layer 14 is provided on the array substrate 11
  • the light-emitting portion 13 is provided on the anode layer 14
  • the cathode layer 15 is provided on the light-emitting portion 13.
  • the constituent materials of the cathode layer 15 may include one or more of metals such as lithium, calcium, lithium, aluminum, and silver.
  • the constituent material of the anode layer 14 may be a metal oxide, such as indium tin oxide.
  • the blue light-emitting material in the light-emitting portion 13 emits blue light under the action of the anode layer 14 and the cathode layer 15, and the quantum dot material located on the side surface 121 of the pixel defining portion 12 emits light of a corresponding color under the excitation of the blue light.
  • the quantum dot material located on the side surface 121 of the pixel defining portion 12 is a red quantum dot material, it emits red light under the excitation of blue light.
  • the display panel 1 further includes a first optical film layer 16, and the first optical film layer 16 includes a red light conversion film layer and a green light conversion film layer.
  • the red light conversion film is arranged opposite to the corresponding light-emitting part 13.
  • the red light conversion film is used to convert light of other colors into red light.
  • the green light conversion film is arranged opposite to the corresponding light-emitting part 13.
  • the green light conversion film is used to convert light of other colors into green light.
  • the display panel 1 further includes a second optical film layer 17, and the second optical film layer 17 includes a red filter film layer, a blue filter film layer and a green filter film layer.
  • the red filter film layer is disposed on the red light conversion film layer.
  • the red filter film is used to filter the red light in the light.
  • the green filter film layer is arranged on the green light conversion film layer.
  • the green filter film is used to filter the green light in the light.
  • the blue filter film layer is arranged opposite to the corresponding light-emitting part 13.
  • the blue filter film is used to filter blue light in the light.
  • the display panel 1 also includes a cover plate 18.
  • the cover plate 18 carries the above-mentioned first optical film layer 16 and the second optical film layer 17.
  • the display panel 1 further includes a thin film encapsulation layer 19, which is disposed between the cathode layer 15 and the first optical film layer 16 or the second optical film layer 17 disposed opposite to the cathode layer 15 .
  • the thin film encapsulation layer 19 can prevent external water and oxygen from corroding.
  • the embodiment of the present invention also provides a manufacturing method of the display panel. Please refer to FIG. 3, which is a flowchart of a manufacturing method of a display panel according to an embodiment of the present invention.
  • the manufacturing method of the display panel includes:
  • step S101 an array substrate is provided.
  • the array substrate 11 may include a substrate and a thin film transistor layer.
  • the substrate may be a flexible substrate composed of flexible materials such as polyimide, polycarbonate, polyethersulfone, polyethylene terephthalate, polyethylene naphthalate, and polyarylate.
  • step S102 a photoresist is coated on the array substrate, and the photoresist is doped with quantum dot materials.
  • a photoresist b is coated on the array substrate 11, and the photoresist b is doped with a quantum dot material a.
  • the quantum dot material a includes a first quantum dot material and/or a second quantum dot material, wherein the first quantum dot light-emitting material is a yellow light quantum dot material, and the second quantum dot material includes a green light quantum dot material and a red light quantum dot material .
  • step S103 the photoresist is processed to form a plurality of pixel defining parts arranged at intervals on the array substrate, so that the side of the pixel defining part is doped with quantum dot material, and the side is the opposite of the pixel defining part and the adjacent pixel defining part.
  • One side is the photoresist.
  • the pixel defining portion 12 as shown in FIG. 4 is formed, wherein the side surface 121 of the pixel defining portion 12 has quantum dot material.
  • the side surface 121 is a side of the pixel defining portion 12 opposite to the adjacent pixel defining portion 12.
  • the constituent material of the pixel defining portion 12 includes a host material and a doped material, wherein the host material includes a photoresist material, and the doped material includes the quantum dot material.
  • the doping concentration of the quantum dot material in the pixel defining portion 12 is not higher than 5%, which can avoid the low concentration of the quantum dot material causing the conversion rate of the quantum dot material to be too low, or the excessive concentration from affecting the pixel.
  • the defining part 12 is formed.
  • step S104 a light-emitting part is formed between adjacent pixel defining parts, and the light-emitting part is used to emit light around, and the quantum dot material on the side surface of the pixel defining part emits light under the excitation of light.
  • Each light-emitting part 13 is arranged between two corresponding adjacent pixel defining parts 12. Wherein, the light-emitting part 13 is used to emit light around, so that the quantum dot material on the side surface 121 of the pixel defining part 12 emits light under the excitation of light, thereby increasing the luminous intensity of the display panel 1.
  • the constituent material of the light-emitting portion 13 includes a blue light-emitting material.
  • the blue light-emitting material may be a blue quantum dot light-emitting material or a blue organic light-emitting material.
  • the blue light-emitting material in the light-emitting part 13 emits blue light
  • the quantum dot material located on the side surface 121 of the pixel defining part 12 emits light of a corresponding color under the excitation of the blue light.
  • the quantum dot material located on the side surface 121 of the pixel defining portion 12 is a red quantum dot material, it emits red light under the excitation of blue light.
  • the embodiment of the present invention also provides a manufacturing method of the display panel.
  • FIG. 5 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present invention.
  • the manufacturing method of the display panel includes:
  • step S201 an array substrate is provided.
  • the array substrate 11 may include a substrate and a thin film transistor layer.
  • the substrate may be a flexible substrate composed of flexible materials such as polyimide, polycarbonate, polyethersulfone, polyethylene terephthalate, polyethylene naphthalate, and polyarylate.
  • Step S202 forming a plurality of pixel defining parts spaced apart on the array substrate on the array substrate.
  • the constituent material of the pixel defining portion 12 is a photoresist material.
  • step S203 a coating is provided on the opposite side of the pixel defining part and the adjacent pixel defining part, and the constituent material of the coating includes a quantum dot material.
  • the side surface 121 of the pixel defining portion 12 is provided with a coating 122.
  • the constituent material of the coating 122 includes quantum dot materials. At this time, the quantum dot material is only distributed on the side surface 121 of the pixel defining part 12, which can reduce the use of quantum dot material and reduce costs.
  • the quantum dot material includes a first quantum dot material and/or a second quantum dot material, wherein the first quantum dot luminescent material is a yellow light quantum dot material, and the second quantum dot material includes a green light quantum dot material and a red light quantum dot material.
  • the opposite side surfaces 121 of the two adjacent pixel defining portions 12 have the same quantum dot material or have different quantum dot materials.
  • FIG. 2 there are four pixel defining parts 12 in total, from left to right: a first pixel defining part 12a, a second pixel defining part 12b, a third pixel defining part 12c, and a fourth pixel defining part 12d.
  • the side surfaces of the first pixel defining portion 12a and the second pixel defining portion 12b opposite to each other both have the yellow light quantum dot material a1, that is, the opposite side surfaces of two adjacent pixel defining portions have the same quantum dot material.
  • the second pixel defining portion 12b and the third pixel defining portion 12c have a yellow light quantum dot material a1 on the opposite side, and the third pixel defining portion 12c and the second pixel defining portion 12b have a red quantum dot luminescent material a2 on the opposite side.
  • the opposite sides of the adjacent pixel defining parts have different quantum dot materials.
  • the opposite side surfaces of the third pixel defining portion 12c and the fourth pixel defining portion 12d have yellow light quantum dot material a1
  • the fourth pixel defining portion 12d and the third pixel defining portion 12c have green light quantum dots on the opposite side surfaces to emit light.
  • Material a3, that is, the opposite sides of two adjacent pixel defining parts have different quantum dot materials.
  • step S204 a light-emitting part is formed between the adjacent pixel definition parts.
  • the light-emitting part is used to emit light around, and the coated quantum dot material emits light under the excitation of light.
  • Each light-emitting part 13 is arranged between two corresponding adjacent pixel defining parts 12. Wherein, the light-emitting part 13 is used to emit light around, so that the quantum dot material on the side surface 121 of the pixel defining part 12 emits light under the excitation of light, thereby increasing the luminous intensity of the display panel 1.
  • the constituent material of the light-emitting portion 13 includes a blue light-emitting material.
  • the blue light-emitting material may be a blue quantum dot light-emitting material or a blue organic light-emitting material.
  • the blue light-emitting material in the light-emitting part 13 emits blue light
  • the quantum dot material located on the side surface 121 of the pixel defining part 12 emits light of a corresponding color under the excitation of the blue light.
  • the quantum dot material located on the side surface 121 of the pixel defining portion 12 is a red quantum dot material, it emits red light under the excitation of blue light.
  • the side surface of the pixel defining part has a quantum dot material, and the quantum dot luminescent material can emit light under the excitation of the light emitted by the light emitting layer, thereby increasing the luminous intensity of the display panel.

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Abstract

一种显示面板（1）和显示面板（1）的制作方法，显示面板（1）包括：阵列基板（11）；多个像素定义部（12），间隔设置在阵列基板（11）上，像素定义部（11）的侧面（121）具有量子点材料，侧面（121）为像素定义部（11）与相邻像素定义部（11）相对的一侧；多个发光部（13），发光部（13）设置在对应的两相邻像素定义部（11）之间，用于向四周发射光，像素定义部（12）的侧面（121）的量子点材料在光的激发下发光。

Description

显示面板和显示面板的制作方法 技术领域
本发明涉及显示技术领域，特别是涉及一种显示面板和显示面板的制作方法。
 背景技术
随着显示面板技术的发展，由于QD-OLED（quantum dot organic light-emitting diode，量子点有机发光二极管）具有色域广、对比度高以及色彩鲜明等优点，其得到越来越广泛的应用。
其中，QD-OLED采用薄膜堆叠结构，具体包括两侧电极夹着多层堆积的有机层。以蓝色有机发光二极管为光源，并在蓝色有机发光二极管上方加入量子点薄膜，并在蓝色有机发光二极管发出的蓝光的激发下，形成不同颜色的光。然而朝向显示面板两侧发射的光没有被有效利用，降低了发光效率。
 技术问题
本发明的目的在于提供一种显示面板和显示面板的制作方法，提高了显示面板的发光强度。
 技术解决方案
本发明实施例提供了一种显示面板，其包括：
阵列基板；
多个像素定义部，所述多个像素定义部相互间隔设置在所述阵列基板上，所述像素定义部的侧面具有量子点材料，所述侧面为所述像素定义部与相邻像素定义部相对的一侧；
多个发光部，所述发光部设置在对应的两相邻像素定义部之间，所述发光部用于向四周发射光，所述像素定义部的所述侧面的所述量子点材料在所述光的激发下发光。
在一实施例中，所述像素定义部的组成材料包括主体材料和掺杂材料，所述掺杂材料包括所述量子点材料。
在一实施例中，所述量子点材料在所述像素定义部中的掺杂浓度不高于5%。
在一实施例中，所述像素定义部的所述侧面设有涂层，所述涂层的组成材料包括所述量子点材料。
在一实施例中，所述量子点材料包括第一量子点材料和/或第二量子点材料，其中，所述第一量子点发光材料为黄光量子点材料，所述第二量子点材料包括绿光量子点材料和红光量子点材料。
在一实施例中，两相邻像素定义部相对的侧面具有相同的量子点材料，或具有不同的量子点材料。
在一实施例中，所述发光部的组成材料包括蓝色发光材料。
在一实施例中，所述显示面板还包括第一光学膜层；
所述第一光学膜层包括：
红光转换膜层，所述红光转换膜层与对应的发光部相对设置；
绿光转换膜层，所述绿光转换膜层与对应的发光部相对设置。
在一实施例中，所述显示面板还包括第二光学膜层；
所述第二光学膜层包括：
红色滤光膜，设置在所述红光转换膜层上；
绿色滤光膜层，设置在所述滤光转换膜层上；
蓝色滤光膜层，与对应的发光部相对设置。
在一实施例中，所述显示面板还包括阴极层和薄膜封装层；
所述阴极层设置在发光部上；
所述薄膜封装层设置在所述阴极层，以及与所述阴极层相对设置的第一光学膜层或第二光学膜层之间。
本发明实施例还提供了一种显示面板的制作方法，其包括：
提供一阵列基板；
在所述阵列基板上涂布光阻，所述光阻掺杂有量子点材料；
对所述光阻进行处理，形成多个相互间隔设置在所述阵列基板上的像素定义部，使得所述像素定义部的侧面掺杂有量子点材料，所述侧面为所述像素定义部与相邻像素定义部相对的一侧；
在相邻像素定义部之间形成发光部，所述发光部用于向四周发射光，所述像素定义部的所述侧面的量子点材料在所述光的激发下发光。
进一步的，本发明实施例还提供了一种显示面板的制作方法，其包括：
提供一阵列基板；
在所述阵列基板上形成多个相互间隔设置在所述阵列基板上的像素定义部；
在所述像素定义部与相邻像素定义部相对的一侧设置涂层，所述涂层的组成材料包括量子点材料；
在相邻像素定义部之间形成发光部，所述发光部用于向四周发射光，所述涂层的所述量子点材料在所述光的激发下发光。
 有益效果
本发明实施例的显示面板和显示面板的制作方法中，像素定义部的侧面具有量子点材料，该量子点发光材料可以在发光层发出的光的激发下发光，提高了显示面板的发光强度。
 附图说明
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：
图1为本发明实施例提供的显示面板的结构示意图。
图2为本发明实施例提供的显示面板的另一结构示意图。
图3为本发明实施例提供的显示面板制作方法的流程示意图。
图4为本发明实施例提供的显示面板制作方法的场景示意图。
图5为本发明实施例提供的显示面板制作方法的另一流程示意图。
图6为本发明实施例提供的显示面板制作方法的另一场景示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
在图中，结构相似的单元是以相同标号表示。
在本文中提及“实施例”意味着，结合实施例描述的特定特征、结构或特性可以包含在本发明的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例，也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是，本文所描述的实施例可以与其它实施例相结合。
请参照图1，图1为本发明实施例提供的显示面板的结构示意图。如图1所示，显示面板1包括阵列基板11、多个像素定义部12以及多个发光部13。
阵列基板11可以包括基板和薄膜晶体管层。其中基板可以为采用聚酰亚胺、聚碳酸酯、聚醚砜、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、多芳基化合物等柔性材料组成的柔性基板。
该多个像素定义部12相互间隔设置在阵列基板11上，像素定义部12的侧面121具有量子点材料。其中，侧面121为像素定义部12与相邻像素定义部12相对的一侧。
在一实施例中，该像素定义部12的组成材料包括主体材料和掺杂材料，其中，主体材料包括光阻材料，所述掺杂材料包括所述量子点材料。即，如图1所示，量子点材料a分布在像素定义部12中，使得像素定义部12的侧面121具有量子点材料a。在一实施例中，该量子点材料在像素定义部12的掺杂浓度不高于5%，既可以避免浓度过低造成量子点材料发光的转化率过低，也可以避免浓度过高影响像素定义部12成型。
在一实施例中，如图2所示，像素定义部12的侧面121设有涂层122。该涂层122的组成材料包括量子点材料。此时，量子点材料仅分布在像素定义部12的侧面121，可以减少量子点材料的使用，降低成本。
其中，量子点材料包括第一量子点材料和/或第二量子点材料，其中，第一量子点发光材料为黄光量子点材料，第二量子点材料包括绿光量子点材料和红光量子点材料。
需要说明的是，两相邻像素定义部12相对的侧面121具有相同的量子点材料，或具有不同的量子点材料。如图2所示共有四个像素定义部12，从左至右分别为：第一像素定义部12a、第二像素定义部12b、第三像素定义部12c以及第四像素定义部12d。其中第一像素定义部12a和第二像素定义部12b彼此相对的侧面均具有黄光量子点材料a1，即两相邻像素定义部相对的侧面具有相同的量子点材料。第二像素定义部12b上与第三像素定义部12c相对的侧面具有黄光量子点材料a1，而第三像素定义部12c上与第二像素定义部12b相对的侧面具有红色量子点发光材料a2，即两相邻像素定义部相对的侧面具有不同的量子点材料。同理的，第三像素定义部12c上和第四像素定义部12d相对的侧面具有黄光量子点材料a1，而第四像素定义部12d上与第三像素定义部12c以相对的侧面具有绿光量子点发光材料a3，即两相邻像素定义部相对的侧面具有不同的量子点材料。
每个发光部13设置在对应的两相邻像素定义部12之间。其中，发光部13用于向四周发射光，使得像素定义部12的侧面121的量子点材料在光的激发下发光，从而提高显示面板1的发光强度。
发光部13的组成材料包括蓝色发光材料。其中，蓝色发光材料可以为蓝色量子点发光材料，也可以为蓝色有机发光材料。
如图1或2所示，显示面板1还包括阳极层14和阴极层15。其中，阳极层14设置在阵列基板11上，发光部13设置在阳极层14上，阴极层15设置在发光部13上。阴极层15的组成材料可以包括锂、钙、锂、铝以及银等金属中的一种或多种。阳极层14的组成材料可以为金属氧化物，比如氧化铟锡。
具体的，发光部13中的蓝色发光材料在阳极层14和阴极层15的作用下发出蓝光，位于像素定义部12的侧面121的量子点材料在蓝光的激发下，发出对应颜色的光。比如，当位于像素定义部12的侧面121的量子点材料为红色量子点材料时，则在蓝光的激发下，发出红色光。
在一实施例中，显示面板1还包括第一光学膜层16，第一光学膜层16包括红光转换膜层和绿光转换膜层。其中，红光转换膜与对应的发光部13相对设置。该红光转换膜用于将其他颜色的光转换成红色的光。绿光转换膜与对应的发光部13相对设置。该绿光转换膜用于将其他颜色的光转换成绿色的光。
在一实施例中，显示面板1还包括第二光学膜层17，第二光学膜层17包括红色滤光膜层，蓝色滤光膜层以及绿色滤光膜层。其中，所述红色滤光膜层设置在所述红光转换膜层上。红色滤光膜层用于将光线中的红色光过滤。绿色滤光膜层设置在绿光转换膜层上。绿色滤光膜层用于将光线中的绿色光过滤。蓝色滤光膜层与对应的发光部13相对设置。该蓝色滤光膜用于将光线中的蓝色光过滤。
显示面板1还包括盖板18。盖板18上承载了上述第一光学膜层16和第二光学膜层17。
在一实施例中，显示面板1还包括薄膜封装层19，该薄膜封装层19设置在阴极层15和与该阴极层15相对设置的第一光学膜层16或者第二光学膜层17之间。该薄膜封装层19可以防止外界水氧的侵蚀。
本发明实施例还提供了一种显示面板的制作方法。请参照图3，图3为本发明实施例提供的显示面板的制作方法的流程图。该显示面板的制作方法包括：
步骤S101，提供一阵列基板。
阵列基板11可以包括基板和薄膜晶体管层。其中基板可以为采用聚酰亚胺、聚碳酸酯、聚醚砜、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、多芳基化合物等柔性材料组成的柔性基板。
步骤S102，在阵列基板上涂布光阻，光阻掺杂有量子点材料。
如图4所示，在阵列基板11上涂布光阻b，该光阻b内掺杂有量子点材料a。其中，量子点材料a包括第一量子点材料和/或第二量子点材料，其中，第一量子点发光材料为黄光量子点材料，第二量子点材料包括绿光量子点材料和红光量子点材料。
步骤S103，对光阻进行处理，形成多个相互间隔设置在阵列基板上的像素定义部，使得像素定义部的侧面掺杂有量子点材料，侧面为像素定义部与相邻像素定义部相对的一侧。
光阻经曝光、显影步骤之后，形成如图4所示的像素定义部12，其中像素定义部12的侧面121具有量子点材料。其中，侧面121为像素定义部12与相邻像素定义部12相对的一侧。
该像素定义部12的组成材料包括主体材料和掺杂材料，其中，主体材料包括光阻材料，所述掺杂材料包括所述量子点材料。在一实施例中，该量子点材料在像素定义部12的掺杂浓度不高于5%，既可以避免浓度过低造成量子点材料发光的转化率过低，也可以避免浓度过高影响像素定义部12成型。
步骤S104，在相邻像素定义部之间形成发光部，发光部用于向四周发射光，像素定义部的侧面的量子点材料在光的激发下发光。
每个发光部13设置在对应的两相邻像素定义部12之间。其中，发光部13用于向四周发射光，使得像素定义部12的侧面121的量子点材料在光的激发下发光，从而提高显示面板1的发光强度。
发光部13的组成材料包括蓝色发光材料。其中，蓝色发光材料可以为蓝色量子点发光材料，也可以为蓝色有机发光材料。
具体的，发光部13中的蓝色发光材料发出蓝光，位于像素定义部12的侧面121的量子点材料在蓝光的激发下，发出对应颜色的光。比如，当位于像素定义部12的侧面121的量子点材料为红色量子点材料时，则在蓝光的激发下，发出红色光。
进一步的，本发明实施例还提供了一种显示面板的制作方法。请参照图5，图5为本发明实施例提供的显示面板的制作方法的流程图。该显示面板的制作方法包括：
步骤S201，提供一阵列基板。
阵列基板11可以包括基板和薄膜晶体管层。其中基板可以为采用聚酰亚胺、聚碳酸酯、聚醚砜、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、多芳基化合物等柔性材料组成的柔性基板。
步骤S202，在阵列基板上形成多个相互间隔设置在阵列基板上的像素定义部。
该像素定义部12的组成材料为光阻材料。
步骤S203，在像素定义部与相邻像素定义部相对的一侧设置涂层，涂层的组成材料包括量子点材料。
如图6所示，像素定义部12的侧面121设有涂层122。该涂层122的组成材料包括量子点材料。此时，量子点材料仅分布在像素定义部12的侧面121，可以减少量子点材料的使用，降低成本。
其中，量子点材料包括第一量子点材料和/或第二量子点材料，其中，第一量子点发光材料为黄光量子点材料，第二量子点材料包括绿光量子点材料和红光量子点材料。
需要说明的是，两相邻像素定义部12相对的侧面121具有相同的量子点材料，或具有不同的量子点材料。如图2所示共有四个像素定义部12，从左至右分别为：第一像素定义部12a、第二像素定义部12b、第三像素定义部12c以及第四像素定义部12d。其中第一像素定义部12a和第二像素定义部12b彼此相对的侧面均具有黄光量子点材料a1，即两相邻像素定义部相对的侧面具有相同的量子点材料。第二像素定义部12b与第三像素定义部12c相对的侧面具有黄光量子点材料a1，而第三像素定义部12c与第二像素定义部12b相对的侧面具有红色量子点发光材料a2，即两相邻像素定义部相对的侧面具有不同的量子点材料。同理的，第三像素定义部12c和第四像素定义部12d相对的侧面具有黄光量子点材料a1，而第四像素定义部12d与第三像素定义部12c以相对的侧面具有绿光量子点发光材料a3，即两相邻像素定义部相对的侧面具有不同的量子点材料。
步骤S204，在相邻像素定义部之间形成发光部，发光部用于向四周发射光，涂层的量子点材料在光的激发下发光。
每个发光部13设置在对应的两相邻像素定义部12之间。其中，发光部13用于向四周发射光，使得像素定义部12的侧面121的量子点材料在光的激发下发光，从而提高显示面板1的发光强度。
发光部13的组成材料包括蓝色发光材料。其中，蓝色发光材料可以为蓝色量子点发光材料，也可以为蓝色有机发光材料。
具体的，发光部13中的蓝色发光材料发出蓝光，位于像素定义部12的侧面121的量子点材料在蓝光的激发下，发出对应颜色的光。比如，当位于像素定义部12的侧面121的量子点材料为红色量子点材料时，则在蓝光的激发下，发出红色光。
本发明实施例的显示面板和显示面板的制作方法中，像素定义部的侧面具有量子点材料，该量子点发光材料可以在发光层发出的光的激发下发光，提高了显示面板的发光强度。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (12)

  1. 一种显示面板，其包括：
    阵列基板；
    多个像素定义部，所述多个像素定义部相互间隔设置在所述阵列基板上，所述像素定义部的侧面具有量子点材料，所述侧面为所述像素定义部与相邻像素定义部相对的一侧；
    多个发光部，所述发光部设置在对应的两相邻像素定义部之间，所述发光部用于向四周发射光，所述像素定义部的所述侧面的所述量子点材料在所述光的激发下发光。
  2. 根据权利要求1所述的显示面板，其中，所述像素定义部的组成材料包括主体材料和掺杂材料，所述掺杂材料包括所述量子点材料。
  3. 根据权利要求2所述的显示面板，其中，所述量子点材料在所述像素定义部中的掺杂浓度不高于5%。
  4. 根据权利要求1所述的显示面板，其中，所述像素定义部的所述侧面设有涂层，所述涂层的组成材料包括所述量子点材料。
  5. 根据权利要求1所述的显示面板，其中，所述量子点材料包括第一量子点材料和/或第二量子点材料，其中，所述第一量子点发光材料为黄光量子点材料，所述第二量子点材料包括绿光量子点材料和红光量子点材料。
  6. 根据权利要求5所述的显示面板，其中，两相邻像素定义部相对的侧面具有相同的量子点材料，或具有不同的量子点材料。
  7. 根据权利要求1所述的显示面板，其中，所述发光部的组成材料包括蓝色发光材料。
  8. 根据权利要求1所述的显示面板，其中，所述显示面板还包括第一光学膜层；
    所述第一光学膜层包括：
    红光转换膜层，所述红光转换膜层与对应的发光部相对设置；
    绿光转换膜层，所述绿光转换膜层与对应的发光部相对设置。
  9. 根据权利要求8所述的显示面板，其中，所述显示面板还包括第二光学膜层；
    所述第二光学膜层包括：
    红色滤光膜，设置在所述红光转换膜层上；
    绿色滤光膜层，设置在所述滤光转换膜层上；
    蓝色滤光膜层，与对应的发光部相对设置。
  10. 根据权利要求9所述的显示面板，其中，所述显示面板还包括阴极层和薄膜封装层；
    所述阴极层设置在发光部上；
    所述薄膜封装层设置在所述阴极层，以及与所述阴极层相对设置的第一光学膜层或第二光学膜层之间。
  11. 一种显示面板的制作方法，其包括：
    提供一阵列基板；
    在所述阵列基板上涂布光阻，所述光阻掺杂有量子点材料；
    对所述光阻进行处理，形成多个相互间隔设置在所述阵列基板上的像素定义部，使得所述像素定义部的侧面掺杂有量子点材料，所述侧面为所述像素定义部与相邻像素定义部相对的一侧；
    在相邻像素定义部之间形成发光部，所述发光部用于向四周发射光，所述像素定义部的所述侧面的量子点材料在所述光的激发下发光。
  12. 一种显示面板的制作方法，其中，包括：
    提供一阵列基板；
    在所述阵列基板上形成多个相互间隔设置在所述阵列基板上的像素定义部；
    在所述像素定义部与相邻像素定义部相对的一侧设置涂层，所述涂层的组成材料包括量子点材料；
    在相邻像素定义部之间形成发光部，所述发光部用于向四周发射光，所述涂层的所述量子点材料在所述光的激发下发光。
PCT/CN2019/115517 2019-09-16 2019-11-05 显示面板和显示面板的制作方法 WO2021051493A1 (zh)

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