WO2021039802A1 - Élément semi-conducteur, et procédé de fabrication d'élément semi-conducteur - Google Patents

Élément semi-conducteur, et procédé de fabrication d'élément semi-conducteur Download PDF

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Publication number
WO2021039802A1
WO2021039802A1 PCT/JP2020/032062 JP2020032062W WO2021039802A1 WO 2021039802 A1 WO2021039802 A1 WO 2021039802A1 JP 2020032062 W JP2020032062 W JP 2020032062W WO 2021039802 A1 WO2021039802 A1 WO 2021039802A1
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main
back surface
semiconductor element
groove
surface side
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PCT/JP2020/032062
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English (en)
Japanese (ja)
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英明 山路
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ローム株式会社
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting

Definitions

  • the present disclosure relates to a semiconductor element and a method for manufacturing the semiconductor element.
  • a plurality of functional regions are formed in a main part material including a semiconductor such as a wafer. Then, the main part material is cut so as to divide these functional regions individually.
  • a contact layer made of metal is formed on the back surface side of the main part material. Then, in the above cutting, dicing using a dicing blade is performed from the main surface side opposite to the back surface side. As a result, a plurality of semiconductor elements, each having the above functional region, are formed.
  • dicing with laser light is also being developed.
  • chipping does not occur because the main material and the contact layer are separated by vaporization.
  • burrs on the contact layer do not occur.
  • the laser beam melts a portion of the contact layer and attaches it to the cut sides of the main material. Since the deposit is conductive, when it reaches the main surface of the main material, the electrode formed on the main surface and the contact layer may be made conductive.
  • the present disclosure has been devised under the above circumstances, and one of the problems thereof is to provide a semiconductor element capable of suppressing defects caused by dicing, and a method for manufacturing the semiconductor element.
  • the semiconductor element provided by the first aspect of the present disclosure comprises at least a part of a semiconductor and is orthogonal to a main surface and a back surface facing opposite sides in the thickness direction and a first direction orthogonal to the thickness direction.
  • a main portion having a main surface side first side surface connected to the main surface, a main surface facing the same side as the main surface side first side surface, and a back surface side first side surface connected to the back surface, and the main surface.
  • the back surface electrode layer covers at least a part of the back surface of the portion, the back surface side first side surface is located outside the main surface side first side surface in the first direction, and the back surface electrode layer is It is provided with a first stretched portion that covers at least a part of the first side surface on the back surface side.
  • the method for manufacturing a semiconductor device provided by the second aspect of the present disclosure comprises at least a part made of a semiconductor, a main surface and a back surface facing opposite sides in the thickness direction, and at least a part of the back surface.
  • the groove forming step of forming the first groove by deleting a part of the main surface side of the main part material and the dimensions of the first direction orthogonal to the thickness direction and the second direction are the first.
  • a dividing step of forming a first slit that is equal to or less than the dimension of the groove in the first direction, is included in the first groove in the thickness direction, and divides the main material in the thickness direction.
  • the division step is performed by irradiation with a laser beam.
  • the first groove is formed first on the main surface side of the main part material, and the first slit included in the first groove is formed by irradiation with laser light in the thickness direction.
  • the main part material and the back surface electrode layer are separated and manufactured.
  • the main part material and the back surface electrode layer are not separated, so that the main part material sways less and chipping is less likely to occur.
  • the division is performed by irradiating the laser beam, the shaking of the main material is small and the occurrence of chipping is suppressed.
  • burrs on the conductor layer do not occur.
  • a part of the conductor layer melted by the irradiation of the laser beam L adheres to the cut side surface, but the deposit is connected to the main surface side of the main part material by the first groove formed earlier. Is suppressed.
  • FIG. 6 is a cross-sectional view taken along the line VII-VII of FIG.
  • FIG. 3 is an enlarged cross-sectional view taken along the line XIV-XIV of FIG. It is a photograph of an example of an actually created semiconductor element shown in FIG. It is sectional drawing which shows the semiconductor device which mounted the semiconductor element which concerns on 1st Embodiment. It is a perspective view which shows the semiconductor element which concerns on 2nd Embodiment.
  • FIG. 6 is an enlarged cross-sectional view taken along the line XVIII-XVIII of FIG. It is an enlarged sectional view which shows the semiconductor element which concerns on 3rd Embodiment. It is sectional drawing which shows the process of forming the 1st groove in the manufacturing method of the semiconductor element shown in FIG. It is a perspective view which shows the semiconductor element which concerns on 4th Embodiment. It is a bottom view which shows the main part material used in the manufacturing method of the semiconductor element shown in FIG.
  • 1 to 12 show a method for manufacturing a semiconductor element according to the first embodiment.
  • FIG. 1 is a plan view of the main material 10 in the z-direction, which is the thickness direction.
  • FIG. 2 is a perspective view of the main material 10.
  • FIG. 3 is a cross-sectional view taken along the line III-III of FIG.
  • the main material 10 is made of at least a part of a semiconductor material, and in the present embodiment, is made of Si in which an n-type region and a p-type region are formed. That is, prior to the states shown in FIGS. 1 to 3, the main material 10 is formed with a plurality of functional regions that should perform a predetermined function of the semiconductor element in the wafer state.
  • the thickness of the main part material 10 is, for example, 80 to 260 ⁇ m, and is 150 ⁇ m in this embodiment.
  • the thickness of the main material 10 is not limited.
  • the main material 10 has a main surface 101 and a back surface 102.
  • the main surface 101 and the back surface 102 face each other in the z direction.
  • a plurality of main surface electrodes 4 and an insulating layer 30 are formed on the main surface 101.
  • the plurality of main surface electrodes 4 are electrodes conducting on the functional region, and are made of, for example, Au.
  • the insulating layer 30 is made of, for example, SiO 2 , and has a thickness of, for example, 3 to 10 ⁇ m.
  • a plurality of openings 31 are formed in the insulating layer 30. Each opening 31 exposes the main surface electrode 4.
  • a plurality of insulating layer first slits 32a and a plurality of insulating layer second slits 32b are formed in the insulating layer 30.
  • the first slit 32a of the insulating layer is formed by removing a part of the insulating layer 30 along the x direction.
  • the plurality of insulating layer first slits 32a extend in the x direction and are spaced apart from each other in the y direction at equal pitches.
  • the second slit 32b of the insulating layer is formed by removing a part of the insulating layer 30 along the y direction.
  • the plurality of insulating layer second slits 32b extend in the y direction and are spaced apart from each other in the x direction at equal pitches.
  • One main surface electrode 4 is arranged in each of the plurality of rectangular regions partitioned by the plurality of insulating layer first slits 32a and the plurality of insulating layer second slits 32b.
  • a conductor layer 20 is formed on the back surface 102.
  • the conductor layer 20 is a layer made of a metal such as Au, and in the present embodiment, covers the entire back surface 102.
  • the thickness of the conductor layer 20 is, for example, about 2 ⁇ m.
  • the main material 10 is held by the holding tape Dt.
  • the upper surface of the holding tape Dt is an adhesive surface in the drawing.
  • the main part material 10 is held by the holding tape Dt in a posture in which the back surface 102 faces downward in the z direction and faces the holding tape Dt. Therefore, the insulating layer 30 is exposed upward in the z direction.
  • the first groove 103a is formed.
  • the first groove 103a is formed, for example, by cutting with a dicing blade Dc.
  • the dicing blade Dc is used to sequentially delete the region near the main surface 101 of the main material 10 along the x direction to form the first groove 103a extending in the x direction.
  • the dicing blade Dc is scanned along the first slit 32a of the insulating layer. As a result, the region near the main surface 101 of the main part material 10 exposed from the first slit 32a of the insulating layer is deleted.
  • the width of the dicing blade Dc is about the same as the width (dimension in the y direction) of the first slit 32a of the insulating layer.
  • the depth of the first groove 103a is, for example, about 30 to 200 ⁇ m, and the width of the first groove 103a is, for example, about 15 to 50 ⁇ m. In the present embodiment, the depth of the first groove 103a is about 100 ⁇ m, which is about two-thirds of the thickness of the main part material 10. In addition, each dimension is not limited.
  • the main material 10 is not cut in the thickness direction, and the first groove 103a having the above-mentioned dimensions is formed.
  • a second groove 103b extending in the y direction is formed.
  • the formation of the second groove 103b is performed, for example, by cutting with a dicing blade Dc, similarly to the formation of the first groove 103a. That is, by scanning the dicing blade Dc along the second slit 32b of the insulating layer, the region near the main surface 101 of the main material 10 exposed from the second slit 32b of the insulating layer is sequentially deleted in the y direction.
  • the extending second groove 103b is formed.
  • a plurality of second grooves 103b are formed, each extending in the y direction and being spaced apart from each other at equal pitches in the x direction.
  • the conditions such as the removal depth of the dicing blade Dc are the same as the conditions in the formation of the first groove 103a. Therefore, the second groove 103b has the same configuration as the first groove 103a, except that the main difference is that the extending direction is different from that of the first groove 103a.
  • the protective film 8 is formed.
  • the protective film 8 is made of a water-soluble resin material, for example, a material containing polyvinyl alcohol or the like.
  • laser processing waste debris
  • the debris adhering to the main material 10 causes device defects such as bonding defects and an increase in leakage current.
  • the protective film 8 is formed to prevent debris from directly adhering to the main material 10.
  • the protective film 8 is formed by being applied to the main surface 101 side of the main part material 10 and solidified.
  • the protective film 8 is formed so as to cover the main surface 101 of the main part material 10, the insulating layer 30, and the plurality of main surface electrodes 4, and is also formed on the inner surfaces of the plurality of first grooves 103a and the plurality of second grooves 103b. Will be done.
  • a part of the main material 10 is deleted so as to penetrate in the z direction along the x direction.
  • This deletion is performed by dicing with the laser beam L. That is, the laser beam L from the pulse-oscillated laser light source is condensed by the condenser lens, and the condensed laser beam L is irradiated to the main part material 10 from the z direction.
  • the irradiation output is adjusted so as to penetrate the main material 10 and the conductor layer 20 and not penetrate the holding tape Dt. Dicing along the x direction is performed by scanning the irradiation of the laser beam L along the first groove 103a.
  • the irradiation width of the laser beam in the y direction is smaller than the width of the first groove 103a. Further, in the z-direction view, the irradiation region of the laser beam overlaps the first groove 103a, and is further included in the first groove 103a in the y-direction. As a result, the first slit 104a is formed.
  • the first slit 104a is formed from the bottom surface of the first groove 103a to the back surface 102 in the z direction, and divides the main part material 10 in the thickness direction.
  • the width dimension (dimension in the y direction) of the first slit 104a is smaller than the width dimension of the first groove 103a, for example, by about 10 ⁇ m, and the first slit 104a is included in the first groove 103a in the z-direction view.
  • the first slit 104a penetrates from the bottom surface of the first groove 103a to the back surface 102, and the side surface of the first slit 104a is from the side surface of the first groove 103a in the y direction. Is also located on the outside. Further, as shown in FIG. 11, a first connecting surface 15a connected to the side surface of the first slit 104a and the side surface of the first groove 103a is formed. The shape of the first connecting surface 15a depends on the shape of the dicing blade Dc when the first groove 103a is formed. In the present embodiment, as shown in FIG. 5, the cross section of the dicing blade Dc parallel to the rotation axis has a U-shaped end and rounded corners.
  • the first connecting surface 15a includes a curved surface portion 16a and an orthogonal portion 17a.
  • the curved surface portion 16a is a concave curved surface portion connected to the side surface of the first groove 103a.
  • the orthogonal portion 17a is a portion connected to the side surface of the first slit 104a and orthogonal to the side surface of the first slit 104a, and is a flat portion facing the z direction.
  • the back surface 102 has a first end edge 102a that extends long in the x direction. At least a part of the first end edge 102a overlaps with the conductor layer 20 in the z-direction view, and in the present embodiment, the first end edge 102a overlaps with the conductor layer 20 over the entire length of the first end edge 102a.
  • the conductor layer 20 has a first stretched portion 22a.
  • the first stretched portion 22a extends from the first end edge 102a toward the main surface 101 (upward in the z direction) and covers a part of the side surface of the first slit 104a.
  • an example in which the first stretched portion 22a exists over the entire length of the first end edge 102a is given as a typical example, but the first stretched portion 22a exists only in a part of the first end edge 102a. It may be a configuration.
  • the first stretched portion 22a is formed by melting a part of the conductor layer 20 by the laser beam when the first slit 104a is formed and adhering to the side surface of the first slit 104a. Since the first groove 103a is covered with the protective film 8, the first stretched portion 22a is not formed so as to be in direct contact with the first groove 103a.
  • the irradiation width of the laser beam in the x direction is smaller than the width of the second groove 103b.
  • the irradiation region of the laser beam overlaps the second groove 103b, and is further included in the second groove 103b in the x-direction. As a result, the second slit 104b is formed.
  • the second slit 104b is formed from the bottom surface of the second groove 103b to the back surface 102 in the z direction, and divides the main part material 10 in the thickness direction.
  • the width dimension (dimension in the x direction) of the second slit 104b is smaller than the width dimension of the second groove 103b, for example, by about 10 ⁇ m, and the second slit 104b is included in the second groove 103b in the z-direction view.
  • a plurality of second slits 104b are formed by repeating the scanning of the irradiation of the laser beam along the y direction a plurality of times.
  • the second slit 104b penetrates from the bottom surface of the second groove 103b to the back surface 102, and the side surface of the second slit 104b is located outside the side surface of the second groove 103b in the x direction.
  • a second connecting surface 15b is formed which connects the side surface of the second slit 104b and the side surface of the second groove 103b.
  • the shape of the second connecting surface 15b depends on the shape of the dicing blade Dc when the second groove 103b is formed.
  • the second connecting surface 15b includes a curved surface portion 16b and an orthogonal portion 17b.
  • the curved surface portion 16b is a concave curved surface portion connected to the side surface of the second groove 103b.
  • the orthogonal portion 17b is a portion connected to the side surface of the second slit 104b and orthogonal to the side surface of the second slit 104b, and is a flat portion facing the z direction.
  • the back surface 102 has a second edge 102b that extends long in the y direction due to the formation of the second slit 104b.
  • the second edge 102b overlaps at least a part of the conductor layer 20 in the z direction, and in the present embodiment, the second edge 102b overlaps the conductor layer 20 over the entire length of the second edge 102b.
  • the conductor layer 20 has a second stretched portion 22b.
  • the second extending portion 22b extends from the second end edge 102b toward the main surface 101 (upward in the z direction) and covers a part of the side surface of the second slit 104b.
  • an example in which the second stretched portion 22b exists over the entire length of the second edge 102b is given as a typical example, but the second stretched portion 22b is present only in a part of the second edge 102b. It may be a configuration.
  • the second stretched portion 22b is formed by melting a part of the conductor layer 20 by the laser light when the second slit 104b is formed and adhering to the side surface of the second slit 104b. Since the second groove 103b is covered with the protective film 8, the second stretched portion 22b is not formed so as to be in direct contact with the second groove 103b.
  • each semiconductor element A1 is divided into a plurality of individual pieces. By going through the above steps, the semiconductor element A1 is formed.
  • FIG. 13 and 14 show the semiconductor element A1.
  • FIG. 13 is a perspective view showing the semiconductor element A1.
  • FIG. 14 is an enlarged cross-sectional view taken along the line XIV-XIV of FIG.
  • the semiconductor element A1 includes a main portion 1, a back surface electrode layer 2, an insulating layer 3, and a main surface electrode 4.
  • the semiconductor element A1 of this embodiment is configured as, for example, a diode.
  • the main part 1 is composed of individual pieces obtained by dividing the main part material 10.
  • the main portion 1 of the present embodiment has a rectangular shape in the z-direction, and the lengths of the side extending in the x direction and the side extending in the y direction are, for example, 0.4 mm to 6 mm.
  • the thickness of the main portion 1 in the z direction is, for example, 80 ⁇ m to 260 ⁇ m, and is 150 ⁇ m in the present embodiment. In addition, each dimension is not limited.
  • the main portion 1 has a main surface 11 and a back surface 12.
  • the main surface 11 and the back surface 12 face in opposite directions in the z direction.
  • At least a part of the main part 1 is formed of a semiconductor, and in the present embodiment, most of the main part 1 is made of Si.
  • the main portion 1 has two main surface side first side surfaces 13a, a back surface side first side surface 14a, a main surface side second side surface 13b, and a back surface side second side surface 14b.
  • the first side surface 13a on the main surface side is a portion that was the first groove 103a
  • the first side surface 14a on the back surface side is a portion that was the first slit 104a.
  • the second side surface 13b on the main surface side is a portion that was the second groove 103b
  • the second side surface 14b on the back surface side is a portion that was the second slit 104b.
  • the first side surface 13a on the main surface side and the second side surface 13b on the main surface side are flat because they are formed by cutting with the dicing blade Dc.
  • the back surface side first side surface 14a and the back surface side second side surface 14b are formed by irradiating the laser beam L in the z direction, a groove extending in the z direction is formed.
  • the first side surface 13a on the main surface side is orthogonal to the y direction and is connected to the main surface 11.
  • the back surface side first side surface 14a faces the same side as the main surface side first side surface 13a and is connected to the back surface 12.
  • the back surface side first side surface 14a is located outside the main surface side first side surface 13a by, for example, about 5 ⁇ m in the y direction.
  • the two main surface side first side surfaces 13a face each other in the y direction. Further, the two back surface side first side surfaces 14a face each other in the y direction.
  • the second side surface 13b on the main surface side is orthogonal to the x direction and is connected to the main surface 11.
  • the back surface side second side surface 14b faces the same side as the main surface side second side surface 13b and is connected to the back surface 12.
  • the back surface side second side surface 14b is located outside the main surface side second side surface 13b by, for example, about 5 ⁇ m in the x direction.
  • the two main surface side second side surfaces 13b face each other in the x direction. Further, the two back surface side second side surfaces 14b face each other in the x direction.
  • the main part 1 has two first connection surfaces 15a and two second connection surfaces 15b.
  • the first connecting surface 15a is connected to the main surface side first side surface 13a and the back surface side first side surface 14a.
  • the first connecting surface 15a includes a curved surface portion 16a and an orthogonal portion 17a.
  • the curved surface portion 16a is a concave curved surface portion connected to the first side surface 13a on the main surface side.
  • the orthogonal portion 17a is a portion connected to the back surface side first side surface 14a and orthogonal to the back surface side first side surface 14a, and is a flat portion facing the z direction.
  • the second connecting surface 15b is connected to the main surface side second side surface 13b and the back surface side second side surface 14b.
  • the second connecting surface 15b includes a curved surface portion 16b and an orthogonal portion 17b.
  • the curved surface portion 16b is a concave curved surface portion connected to the second side surface 13b on the main surface side.
  • the orthogonal portion 17b is a portion that is connected to the back surface side second side surface 14b and is orthogonal to the back surface side second side surface 14b, and is a flat portion that faces the z direction.
  • the z-direction dimension h1 of the main surface side first side surface 13a is larger than the z-direction dimension h2 of the back surface side first side surface 14a, and in the present embodiment, it is about twice the dimension h2.
  • the z-direction dimension h1 of the main surface side first side surface 13a is about 100 ⁇ m
  • the z-direction dimension h2 of the back surface side first side surface 14a is about 50 ⁇ m. It is desirable that the dimension h1 is 5 times or less the dimension h2.
  • the z-direction dimension of the main surface side second side surface 13b is larger than the z direction dimension of the back surface side second side surface 14b, and in the present embodiment, it is about twice the z direction dimension of the back surface side second side surface 14b. .. In the present embodiment, the z-direction dimension of the main surface side second side surface 13b is about 100 ⁇ m, and the z-direction dimension of the back surface side second side surface 14b is about 50 ⁇ m. In addition, each dimension is not limited.
  • the z-direction dimensions of the back surface side first side surface 14a and the back surface side second side surface 14b are 50 ⁇ m in order to secure the strength of the main part material 10 in which the first groove 103a and the second groove 103b are formed at the time of manufacturing. The above is desirable.
  • the back surface electrode layer 2 is formed on the back surface 12, and in the present embodiment, covers the entire back surface 12.
  • the back surface electrode layer 2 is a layer made of a metal such as Au, and in the present embodiment, the thickness thereof is, for example, about 2 ⁇ m.
  • the back surface electrode layer 2 covers each of the first end edge 12a connected to the back surface side first side surface 14a of the back surface 12 and the second end edge 12b connected to the back surface side second side surface 14b of the back surface 12 and the entire surface thereof.
  • the back surface electrode layer 2 is formed by dividing the conductor layer 20.
  • the back electrode layer 2 has two first stretched portions 22a and two second stretched portions 22b.
  • Each of the first stretched portions 22a covers at least a part of each back surface side first side surface 14a, and in the present embodiment, as shown in FIG. 13, the first end edge is over the entire length of the first end edge 12a. It extends from 12a toward the main surface 11 side.
  • Each second extending portion 22b covers at least a part of each back surface side second side surface 14b, and in the present embodiment, as shown in FIG. 13, the second end edge over the entire length of the second end edge 12b. It extends from 12b toward the main surface 11 side.
  • the dicing step using the laser beam is performed after the protective film 8 is formed on the inner surfaces of the plurality of first grooves 103a and the plurality of second grooves 103b, a part of the conductor layer 20 melted by the laser beam is formed. It does not adhere to the first groove 103a or the second groove 103b. Therefore, the first stretched portion 22a does not extend to the main surface side first side surface 13a and does not cover the main surface side first side surface 13a. Further, the second stretched portion 22b does not stretch to the main surface side second side surface 13b and does not cover the main surface side second side surface 13b.
  • the main surface electrode 4 is an electrode that conducts to the functional region, and is made of, for example, Au.
  • the insulating layer 3 is formed by dividing the insulating layer 30 and is composed of, for example, SiO 2 , and has a thickness of, for example, 3 to 10 ⁇ m.
  • An opening 31 is formed in the insulating layer 3. The opening 31 exposes the main surface electrode 4.
  • FIG. 15 is a photograph of an example of the semiconductor element A1 actually created.
  • FIG. 15 shows the semiconductor element A1 centered on the main surface side first side surface 13a and the back surface side first side surface 14a from the back surface 12 side of the main portion 1.
  • the first stretched portion 22a extended from the back surface electrode layer 2 covers most of the back surface side first side surface 14a, while hardly covering the main surface side second side surface 13b. ..
  • FIG. 16 shows a semiconductor device C1 manufactured by using the semiconductor element A1.
  • the semiconductor device C1 includes a semiconductor element A1, a lead 51, a lead 52, a wire 6, and a sealing resin 7.
  • the leads 51 and 52 are made of, for example, Cu, and the surfaces thereof may be plated with Ni, if necessary.
  • a semiconductor element A1 is mounted on the lead 51. More specifically, the semiconductor element A1 leads by co-crystallizing the back electrode layer 2 and the lead 51 by applying ultrasonic vibration while pressing the back electrode layer 2 of the semiconductor element A1 against the reed 51. It is joined to 51.
  • the lead 52 is conducting with the main surface electrode 4 of the semiconductor element A1 via the wire 6.
  • the sealing resin 7 covers all of the semiconductor element A1 and the wire 6, and a part of the lead 51 and the lead 52, and is made of, for example, a black epoxy resin. The portion of the lead 51 and the lead 52 exposed from the sealing resin 7 is used as a mounting terminal for mounting the semiconductor device C1 on a circuit board or the like.
  • the first groove 103a and the second groove 103b are formed first on the main surface 101 side of the main part material 10, and the protective film 8 is formed, and then in the z-direction view.
  • the main material 10 and the conductor layer 20 are separated by forming the first slit 104a contained in the first groove 103a and the second slit 104b contained in the second groove 103b by irradiation with the laser beam L. Manufactured.
  • the dicing blade is less likely to shake and chipping is less likely to occur.
  • the division is performed by irradiating the laser beam L, chipping does not occur at the time of division. Further, burrs on the conductor layer 20 do not occur. Further, a part of the conductor layer 20 melted by irradiation with the laser beam L adheres to the back surface side first side surface 14a and the back surface side second side surface 14b, which are the cut side surfaces, and the first stretched portion 22a and the first stretched portion 22a.
  • the two stretched portions 22b are formed, but since the protective film 8 is formed on the inner surfaces of the first groove 103a and the second groove 103b formed earlier, the first side surface 13a on the main surface side and the first side surface on the main surface side The two side surfaces 13b are not covered by the first stretched portion 22a and the second stretched portion 22b. Therefore, the first stretched portion 22a and the second stretched portion 22b do not stretch to the main surface 11 of the main portion 1, and the conduction between the main surface electrode 4 and the back surface electrode layer 2 can be prevented.
  • the first stretched portion 22a in which the back surface electrode layer 2 is stretched is formed on the back surface side first side surface 14a, and the back surface electrode layer 2 is stretched on the back surface side second side surface 14b.
  • the portion 22b is formed. Therefore, as shown in FIG. 16, when the semiconductor element A1 is bonded to the lead 51, the lead 51 is eutectic and bonded to the first stretched portion 22a and the second stretched portion 22b. Thereby, the joint strength can be increased. In addition, it is easy to determine the bonding state between the semiconductor element A1 and the lead 51 after bonding by visual inspection.
  • the back surface side first side surface 14a and the back surface side second side surface 14b are formed by irradiating the laser beam L in the z direction, a groove extending in the z direction is formed. Therefore, as shown in FIG. 16, when the semiconductor element A1 is sealed by the sealing resin 7, the unevenness of the groove prevents the main portion 1 and the sealing resin 7 from peeling off. Can be done.
  • the main surface side first side surface 13a and the main surface side second side surface 13b are flat because they are formed by cutting with the dicing blade Dc. Therefore, it is easy to pick up the semiconductor element A1 with a collet.
  • FIG. 17 is a perspective view showing the semiconductor element A2, and is a diagram corresponding to FIG.
  • FIG. 18 is an enlarged cross-sectional view taken along the line XVIII-XVIII of FIG.
  • the semiconductor element A2 is different from the semiconductor element A1 according to the first embodiment in that the main surface side first side surface 13a and the main surface side second side surface 13b are also formed by irradiation with the laser beam L.
  • the semiconductor element A2 is irradiated with the laser beam L instead of cutting with the dicing blade Dc.
  • the output of the irradiation is adjusted so as to remove it to a predetermined depth without penetrating the main material 10. Therefore, as shown in FIG. 17, grooves extending in the z direction are formed on the main surface side first side surface 13a and the main surface side second side surface 13b, similarly to the back surface side first side surface 14a and the back surface side second side surface 14b. Has been done.
  • the first connecting surface 15a and the second connecting surface 15b are surfaces on which fine irregularities are formed.
  • the first groove 103a and the second groove 103b are formed first on the main surface 101 side of the main part material 10, and the first slit 104a and the second slit 104b are the laser beams L. It is formed and manufactured by irradiation. Therefore, the occurrence of chipping is suppressed and the occurrence of burrs is prevented. Further, the conduction between the main surface electrode 4 and the back surface electrode layer 2 can be prevented.
  • the first stretched portion 22a is formed on the first side surface 14a on the back surface side
  • the second stretched portion 22b is formed on the second side surface 14b on the back surface side. Therefore, the bonding strength between the semiconductor element A2 and the lead 51 can be increased, and the bonding state can be easily determined by visual inspection.
  • the back surface side first side surface 14a and the back surface side second side surface 14b are formed with grooves extending in the z direction. Therefore, when the semiconductor element A2 is sealed by the sealing resin 7, it is possible to prevent the main portion 1 and the sealing resin 7 from peeling off.
  • FIG. 19 is an enlarged cross-sectional view showing the semiconductor element A3, and is a view corresponding to FIG.
  • FIG. 20 is a cross-sectional view showing a step of forming the first groove in the method of manufacturing the semiconductor element A3, and is a diagram corresponding to FIG.
  • the semiconductor element A3 is different from the semiconductor element A1 according to the first embodiment in that the protective film 8 is not formed in the manufacturing process.
  • the main portion 1 of the semiconductor element A3 has a smaller z-direction dimension h1 of the first side surface 13a on the main surface side than the main portion 1 of the semiconductor element A1 (see FIG. 14), and the back surface side.
  • the z-direction dimension h2 of the first side surface 14a is large.
  • the width dimension (dimension in the y direction) of the first connecting surface 15a is large.
  • the semiconductor element A3 is formed by cutting shallowly with a wide dicing blade Dc in the process of forming the first groove 103a.
  • the z-direction dimension of the second side surface 13b on the main surface side is smaller, the z-direction dimension of the second side surface 14b on the back surface side is larger, and the width dimension of the second connection surface 15b is larger than that of the semiconductor element A1. large.
  • the semiconductor element A3 after the first groove 103a and the second groove 103b are formed, the first slit 104a and the second slit 104b are formed without forming the protective film 8.
  • the shape of the main portion 1 of the semiconductor element A3 is the above-mentioned shape, the first stretched portion 22a and the second stretched portion 22b are stretched to the main surface 11 of the main portion 1 even when the protective film 8 is not formed in the manufacturing process. There is little to do.
  • the first groove 103a and the second groove 103b are formed first on the main surface 101 side of the main part material 10, and the first slit 104a and the second slit 104b are the laser beams L. It is formed and manufactured by irradiation. Therefore, the occurrence of chipping is suppressed and the occurrence of burrs is prevented. Further, the conduction between the main surface electrode 4 and the back surface electrode layer 2 can be suppressed.
  • the first stretched portion 22a is formed on the first side surface 14a on the back surface side
  • the second stretched portion 22b is formed on the second side surface 14b on the back surface side. Therefore, the bonding strength between the semiconductor element A3 and the lead 51 can be increased, and the bonding state can be easily determined by visual inspection.
  • the back surface side first side surface 14a and the back surface side second side surface 14b are formed with grooves extending in the z direction. Therefore, when the semiconductor element A3 is sealed by the sealing resin 7, it is possible to prevent the main portion 1 and the sealing resin 7 from peeling off.
  • the main surface side first side surface 13a and the main surface side second side surface 13b are flat. Therefore, it is easy to pick up the semiconductor element A3 with a collet.
  • the shape of the main portion 1 of the semiconductor element A3 is different from the shape of the main portion 1 of the semiconductor element A1 has been described, but the present disclosure is not limited to this.
  • the shape of the main portion 1 of the semiconductor element A3 is described above so that the first stretched portion 22a and the second stretched portion 22b are difficult to stretch to the main surface 11 of the main portion 1 even when the protective film 8 is not formed. It is supposed to have been done. Even if the shape of the main portion 1 is the same as that of the semiconductor element A1, the first stretched portion 22a and the second stretched portion 22b are the main parts of the main portion 1 as compared with the conventional semiconductor element that cuts only by the laser beam L. It is possible to suppress stretching to the surface 11.
  • the z of the main surface side first side surface 13a and the main surface side second side surface 13b It is desirable to reduce the directional dimension, increase the z-direction dimension of the back surface side first side surface 14a and the back surface side second side surface 14b, and increase the width dimension of the first connection surface 15a and the second connection surface 15b. Further, it is desirable to reduce the width dimension of the first slit 104a and the second slit 104b.
  • FIG. 21 is a perspective view showing the semiconductor element A4, and is a diagram corresponding to FIG.
  • FIG. 22 is a bottom view showing a main part material used in the method for manufacturing the semiconductor element A4, and is a view corresponding to a view of FIG. 1 from the bottom side.
  • the holding tape Dt is transmitted and shown by a two-dot chain line.
  • the semiconductor element A4 according to the first embodiment is formed by penetrating the second slit 104b from the main surface 101 to the back surface 102 of the main part material 10 without forming the second groove 103b in the manufacturing process. Different from A1.
  • the main portion 1 of the semiconductor element A4 does not include the main surface side second side surface 13b, and the back surface side second side surface 14b is connected to the main surface 11 and the back surface 12. Further, the back surface electrode layer 2 does not cover the entire back surface 12, but exposes the entire second end edge 12b connected to the back surface side second side surface 14b. Therefore, the back surface electrode layer 2 does not have the second stretched portion 22b.
  • the main material 10 used in the method for manufacturing the semiconductor element A4 has a plurality of conductor layers 20 formed on the back surface 102.
  • pointillism is attached to the conductor layer 20.
  • the plurality of conductor layers 20 extend in the y direction and are spaced apart from each other in the x direction at equal pitches.
  • Each conductor layer 20 overlaps the entire main surface electrode 4 and does not overlap each insulating layer second slit 32b in the z-direction view.
  • Each conductor layer 20 may or may not overlap a part of each main surface electrode 4 in the z-direction view.
  • the second groove 103b is not formed and the protective film 8 is formed.
  • the first slit 104a and the second slit 104b are formed by dicing with the laser beam L.
  • the second slit 104b penetrates from the main surface 101 to the back surface 102 of the main material 10. Since each conductor layer 20 does not overlap with each insulating layer second slit 32b, in the formation of the second slit 104b, it is not melted by the laser beam and the second stretched portion 22b is not formed.
  • the first groove 103a is formed first on the main surface 101 side of the main part material 10, and the first slit 104a and the second slit 104b are formed by irradiation with the laser beam L.
  • the occurrence of chipping is suppressed and the occurrence of burrs is prevented.
  • a part of the conductor layer 20 melted by irradiation with the laser beam L adheres to the first side surface 14a on the back surface side, which is the cut side surface, to form the first stretched portion 22a, but the first stretched portion 22a is formed first.
  • the protective film 8 is formed on the inner surface of the first groove 103a, the first side surface 13a on the main surface side is not covered by the first extension portion 22a. Further, since each conductor layer 20 does not overlap with each insulating layer second slit 32b, the second stretched portion 22b is not formed. Therefore, the conduction between the main surface electrode 4 and the back surface electrode layer 2 can be suppressed.
  • the bonding strength between the semiconductor element A4 and the lead 51 can be increased, and the bonding state is determined by visual inspection. It's easy to do.
  • the back surface side first side surface 14a and the back surface side second side surface 14b are formed with grooves extending in the z direction. Therefore, when the semiconductor element A4 is sealed by the sealing resin 7, it is possible to prevent the main portion 1 and the sealing resin 7 from peeling off.
  • the semiconductor element and the method for manufacturing the semiconductor element according to the present disclosure are not limited to the above-described embodiment.
  • the specific configuration of each part of the semiconductor element according to the present disclosure and the specific processing of each step of the method for manufacturing the semiconductor element of the present disclosure can be variously redesigned.
  • Appendix 1 The main surface and the back surface, which are at least partly made of a semiconductor and face opposite to each other in the thickness direction, and the first surface on the main surface side which is orthogonal to the first direction orthogonal to the thickness direction and is connected to the main surface. And a main portion having the same side as the first side surface on the main surface side and the first side surface on the back surface side connected to the back surface.
  • a back electrode layer that covers at least a part of the back surface of the main portion, With The back surface side first side surface is located outside the main surface side first side surface in the first direction.
  • the back surface electrode layer is a semiconductor device including a first stretched portion that covers at least a part of the back surface side first side surface. Appendix 2.
  • the semiconductor element according to Appendix 1 wherein a groove extending in the thickness direction is formed on the first side surface on the back surface side.
  • Appendix 3. The semiconductor element according to Appendix 1 or 2, wherein the first side surface on the main surface side is flat.
  • Appendix 4. The semiconductor element according to Appendix 1 or 2, wherein a groove extending in the thickness direction is formed on the first side surface on the main surface side.
  • Appendix 5. The semiconductor element according to any one of Supplementary note 1 to 4, wherein the first stretched portion does not cover the first side surface on the main surface side.
  • Appendix 6. The semiconductor element according to any one of Supplementary note 1 to 5, wherein the back surface electrode layer covers the entire first end edge connected to the back surface side first side surface of the back surface.
  • Appendix 8. The semiconductor element according to any one of Appendix 1 to 7, wherein the back surface electrode layer covers the entire back surface.
  • Appendix 9. The semiconductor element according to any one of Supplementary note 1 to 8, wherein the main portion further includes a first connecting surface that connects the first side surface on the main surface side and the first side surface on the back surface side.
  • the first connecting surface includes a concave curved surface portion connected to the first side surface on the main surface side and an orthogonal portion connected to the first side surface on the back surface side and orthogonal to the first side surface on the back surface side.
  • Appendix 11 The semiconductor element according to any one of Supplementary note 1 to 10, wherein the dimension of the first side surface on the main surface side in the thickness direction is larger than the dimension of the first side surface on the back surface side in the thickness direction.
  • Appendix 12 The semiconductor element according to Appendix 11, wherein the dimension of the first side surface on the main surface side in the thickness direction is five times or less the dimension in the thickness direction of the first side surface on the back surface side.
  • Appendix 13 The semiconductor element according to any one of Supplementary note 1 to 12, wherein the dimension of the first side surface on the back surface side in the thickness direction is 50 ⁇ m or more. Appendix 14.
  • the main portion is any one of Supplementary notes 1 to 13, which has two main surface side first side surfaces and two back surface side first side surfaces facing each other in the first direction.
  • the main portion has a main surface side second side surface orthogonal to the thickness direction and a second direction orthogonal to the first direction and connected to the main surface, and the same side as the main surface side second side surface. It also has a second side surface on the back surface side that is oriented and is connected to the back surface.
  • the back surface side second side surface is located outside the main surface side second side surface in the second direction.
  • Appendix 16 The semiconductor element according to Appendix 15, wherein the main portion has two main surface side second side surfaces and two back surface side second side surfaces facing each other in the second direction.
  • Appendix 17. A preparatory step of preparing a main material, which is at least partly made of a semiconductor, has a main surface and a back surface facing opposite sides in the thickness direction, and at least a part of the back surface is covered with a conductor layer.
  • a dividing step of forming a first slit for dividing the main material in the thickness direction, and With The dividing step is a method for manufacturing a semiconductor element, which is performed by irradiating a laser beam.
  • Appendix 18 The method for manufacturing a semiconductor device according to Appendix 17, wherein the groove forming step is performed by cutting with a dicing blade.
  • Appendix 19 The method for manufacturing a semiconductor device according to Appendix 17, wherein the groove forming step is performed by irradiating the laser beam. Appendix 20.
  • a protective film forming step which is performed between the groove forming step and the dividing step to form a protective film on the inner surface of the first groove
  • a protective film removing step which is performed after the dividing step and removes the protective film
  • the dimension in the second direction is not more than or equal to the dimension in the second direction of the second groove, and the second groove is included in the second groove in the thickness direction view, and the main The method for manufacturing a semiconductor device according to any one of Supplementary note 17 to 20, wherein a second slit for dividing a part material in the thickness direction is formed.
  • A1 to A4 Semiconductor element 1: Main part 11: Main surface 12: Back surface 12a: First end edge 12b: Second end edge 13a: Main surface side first side surface 13b: Main surface side second side surface 14a: Back surface side first One side surface 14b: Back surface side Second side surface 15a: First connection surface 16a: Curved surface portion 17a: Orthogonal portion 15b: Second connection surface 16b: Curved surface portion 17b: Orthogonal portion 2: Back surface electrode layer 22a: First extension portion 22b: Second stretched portion 3: Insulation layer 4: Main surface electrode C1: Semiconductor device 51: Lead 52: Lead 6: Wire 7: Encapsulating resin 8: Protective film 10: Main part material 101: Main surface 102: Back surface 102a: First One end edge 102b: Second end edge 103a: First groove 103b: Second groove 104a: First slit 104b: Second slit 20: Conductor layer 30: Insulation layer 31: Opening 32a: Insulation layer first slit 32b: Insul

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)

Abstract

L'invention concerne un élément semi-conducteur qui est pourvu d'une portion principale et d'une couche d'électrode de surface arrière. La portion principale comprend au moins partiellement un semi-conducteur, et comprend : une surface principale et une surface arrière qui font face à des côtés mutuellement opposés dans le sens de l'épaisseur ; une première surface latérale côté surface principale qui est orthogonale à une première direction qui est orthogonale au sens de l'épaisseur, et qui est jointe à la surface principale ; et une première surface latérale côté surface arrière qui fait face au même côté que la première surface latérale côté surface principale, et qui est jointe à la surface arrière. La couche d'électrode de surface arrière recouvre au moins une portion de la surface arrière de la portion principale. La première surface latérale côté surface arrière est positionnée à l'extérieur de la première surface latérale côté surface principale dans la première direction. La couche d'électrode de surface arrière est pourvue d'une première portion allongée qui recouvre au moins une portion de la première surface latérale côté surface arrière.
PCT/JP2020/032062 2019-08-27 2020-08-25 Élément semi-conducteur, et procédé de fabrication d'élément semi-conducteur WO2021039802A1 (fr)

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JP2019-154592 2019-08-27
JP2019154592A JP2022177326A (ja) 2019-08-27 2019-08-27 半導体素子、および半導体素子の製造方法

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6195544A (ja) * 1984-10-17 1986-05-14 Hitachi Ltd ペレタイズ方法
JPH0927639A (ja) * 1995-07-12 1997-01-28 Toshiba Corp 半導体装置
JP2017228651A (ja) * 2016-06-22 2017-12-28 株式会社ディスコ ウェーハの加工方法
JP2018078192A (ja) * 2016-11-09 2018-05-17 株式会社村田製作所 半導体装置
JP2018078162A (ja) * 2016-11-08 2018-05-17 株式会社ディスコ ウェーハの加工方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6195544A (ja) * 1984-10-17 1986-05-14 Hitachi Ltd ペレタイズ方法
JPH0927639A (ja) * 1995-07-12 1997-01-28 Toshiba Corp 半導体装置
JP2017228651A (ja) * 2016-06-22 2017-12-28 株式会社ディスコ ウェーハの加工方法
JP2018078162A (ja) * 2016-11-08 2018-05-17 株式会社ディスコ ウェーハの加工方法
JP2018078192A (ja) * 2016-11-09 2018-05-17 株式会社村田製作所 半導体装置

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