WO2021031389A1 - 柔性微发光二极管显示面板及微发光二极管显示装置 - Google Patents

柔性微发光二极管显示面板及微发光二极管显示装置 Download PDF

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Publication number
WO2021031389A1
WO2021031389A1 PCT/CN2019/116737 CN2019116737W WO2021031389A1 WO 2021031389 A1 WO2021031389 A1 WO 2021031389A1 CN 2019116737 W CN2019116737 W CN 2019116737W WO 2021031389 A1 WO2021031389 A1 WO 2021031389A1
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Prior art keywords
emitting diode
diode display
micro
light emitting
micro light
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PCT/CN2019/116737
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English (en)
French (fr)
Inventor
樊勇
李佳育
石钰
Original Assignee
深圳市华星光电半导体显示技术有限公司
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Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to JP2021503005A priority Critical patent/JP2022501629A/ja
Priority to US16/624,921 priority patent/US20210343907A1/en
Publication of WO2021031389A1 publication Critical patent/WO2021031389A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes

Definitions

  • the present invention relates to the field of display technology, in particular to a flexible micro-light-emitting diode display panel and a micro-light-emitting diode display device.
  • Micro LED displays Compared with OLED displays, Micro LED displays have the advantages of high luminous efficiency, high color gamut, high brightness, high transparency, low power consumption, good reliability, and long life. Therefore, they may become the next generation of display points.
  • micro-light-emitting diode particles need to be transferred and bonded to the TFT substrate.
  • the transfer and bonding technology of micro-light-emitting diode particles is limited by the limitations of equipment development (for example, a large number of micro-light-emitting diode particles are transferred to TFT It is difficult to directly manufacture large-size micro LED display panels at present.
  • the purpose of the present invention is to provide a flexible micro-light-emitting diode display panel and a micro-light-emitting diode display device, so as to achieve seamless splicing of multiple micro-light-emitting diode panels, thereby realizing large-size micro-light-emitting diode display devices.
  • the present invention provides a micro-light-emitting diode display device, which includes:
  • At least two flexible micro light emitting diode display panels wherein each of the flexible micro light emitting diode display panels includes:
  • a support plate having an upper surface, a lower surface, at least one side surface, and at least one upper arc chamfer, the at least one side surface connects the upper surface and the lower surface, and the at least one upper arc is inverted A corner connecting the upper surface and the side surface;
  • a flexible micro light emitting diode substrate having a display area and at least one frame portion, the display area is disposed on the upper surface, and the display area is provided with a plurality of micro light emitting diodes, and the at least one frame portion can be bent And extending to the lower surface, the at least one frame portion contacts the at least one upper arc chamfer and the side surface; and
  • a printed circuit board is electrically connected with the frame part.
  • the plurality of micro light emitting diodes form a plurality of pixel units, and there is a pixel unit pitch between two adjacent pixel units, and the curvature of the upper arc chamfer of the support plate The radius is less than half of the pixel unit pitch.
  • the frame portion has at least a cut corner.
  • the printed circuit board is disposed on the lower surface of the supporting board.
  • the support plate further includes at least a lower arc chamfer, the at least lower arc chamfer connects the lower surface and the side surface, and the frame portion contacts the lower arc chamfer angle.
  • a black glue is arranged between the at least two flexible micro light emitting diode display panels.
  • the black glue is disposed between the respective frame portions of the at least two flexible micro-light emitting diode display panels.
  • the present invention also provides a flexible micro-light-emitting diode display panel, which includes:
  • a support plate having an upper surface, a lower surface, at least one side surface, and at least one upper arc chamfer, the at least one side surface connects the upper surface and the lower surface, and the at least one upper arc is inverted A corner connecting the upper surface and the side surface;
  • a flexible micro-light-emitting diode substrate has a display area and at least one frame portion, the display area is arranged on the upper surface, and the display area is provided with a plurality of micro-light-emitting diodes, and the at least one frame portion is arranged on the Said at least one upper arc chamfer and said side surface; and
  • a printed circuit board (PCB) is electrically connected to the frame part.
  • the plurality of micro light emitting diodes form a plurality of pixel units, and there is a pixel unit pitch between two adjacent pixel units, and the curvature of the upper arc chamfer of the support plate The radius is less than half of the pixel unit pitch.
  • the frame portion has at least a cut corner.
  • the printed circuit board is disposed on the lower surface of the support board.
  • the support plate further includes at least a lower arc chamfer, and the at least a lower arc chamfer connects the lower surface and the side surface.
  • the present invention also provides a micro-light-emitting diode display device, which includes:
  • At least two flexible micro light emitting diode display panels wherein each of the flexible micro light emitting diode display panels includes:
  • a support plate having an upper surface, a lower surface, at least one side surface, and at least one upper arc chamfer, the at least one side surface connects the upper surface and the lower surface, and the at least one upper arc is inverted A corner connecting the upper surface and the side surface;
  • a flexible micro-light-emitting diode substrate has a display area and at least one frame portion, the display area is arranged on the upper surface, and the display area is provided with a plurality of micro-light-emitting diodes, and the at least one frame portion is arranged on the Said at least one upper arc chamfer and said side surface; and
  • a printed circuit board (PCB) is electrically connected to the frame part.
  • the plurality of micro light emitting diodes form a plurality of pixel units, and there is a pixel unit pitch between two adjacent pixel units, and the curvature of the upper arc chamfer of the support plate The radius is less than half of the pixel unit pitch.
  • the frame portion has at least a cut corner.
  • the printed circuit board is disposed on the lower surface of the support board.
  • a black glue is arranged between the at least two flexible micro light emitting diode display panels.
  • the present invention uses the arc chamfering on the support plate and the chamfering of the frame part to match the flexible micro-light-emitting diode substrate to reduce the slits that do not have the display effect, thereby achieving seamless splicing of multiple micro-luminescence
  • the diode panel further realizes a large-size micro-light-emitting diode display device.
  • FIG. 1 is a schematic side view of the structure of a micro light emitting diode display device according to an embodiment of the present invention.
  • FIG. 2 is a top view of a flexible micro-light emitting diode display panel in an unfolded state according to an embodiment of the present invention.
  • Fig. 3 is a side view of the upper arc chamfer in the embodiment of Fig. 1.
  • FIG. 4 is a top view of a flexible micro-light emitting diode display panel in a bent state according to an embodiment of the present invention.
  • FIG. 1 is a schematic side view of the structure of a micro-light emitting diode display device according to an embodiment of the present invention.
  • 2 is a top view of a flexible micro-light emitting diode display panel in an unfolded state according to an embodiment of the present invention.
  • Fig. 3 is a side view of the upper arc chamfer in the embodiment of Fig. 1.
  • 4 is a top view of a flexible micro-light emitting diode display panel in a bent state according to an embodiment of the present invention.
  • an embodiment of the present invention provides a micro-light-emitting diode display device, which includes: a first flexible micro-light-emitting diode display panel 100, and a second flexible micro-light-emitting diode display panel 200 and a vinyl 300.
  • the micro-light-emitting diode display device may be a spliced micro-light-emitting diode display device.
  • the first flexible micro light emitting diode display panel 100 includes a supporting plate 110, a flexible micro light emitting diode substrate 120 and a printed circuit board (PCB) 130.
  • PCB printed circuit board
  • the supporting plate 110 has an upper surface 111, a lower surface 112, a side surface 113 and an upper arc chamfer 114.
  • the side surface 113 connects the upper surface 111 and the lower surface 112
  • the upper arc chamfer 114 connects the upper surface 111 and the side surface 113.
  • the supporting plate 110 may further include a lower arc chamfer 115, and the lower arc chamfer 115 connects the lower surface 112 and the side surface 113.
  • the flexible micro light emitting diode substrate 120 has a display area AA and four frame parts 121, 122, 123, and 124.
  • the display area AA is provided on the upper surface 111, and the display area AA is provided with a plurality of micro light emitting diodes.
  • the frame portion 121 is disposed on the upper arc chamfer 114 and the side surface 113. Taking FIG. 1 as an example, the frame portion 121 may contact the upper arc chamfer 114, the side surface 113, the lower arc chamfer 115 and part of the lower surface 112. Thereby, the frame portions 121, 122, 123, and 124 can be bent and extend to the lower surface 112.
  • the frame portions 122, 123, and 124 may also have cut corners 122a, 123a, 124a, and 124b, respectively, so as to prevent the frame portions 121, 122, 123, and 124 from overlapping each other when they are bent. It should be understood that the cutting angle can be varied in many ways according to requirements.
  • the flexible micro light emitting diode substrate 120 may be a multilayer film structure, which may include a flexible organic film layer.
  • polyimide (PI) is used as a base to construct the micro light emitting diode substrate 120.
  • the plurality of micro light-emitting diodes form a plurality of pixel units 125, and there is a pixel unit pitch D1 between two adjacent pixel units 125.
  • the upper arc chamfer 114 The radius of curvature R1 is less than half of the pixel unit pitch D1. It should be understood that the radius of curvature of the lower arc chamfer 115 may also be less than half of the pixel unit pitch.
  • a single pixel unit 125 may be composed of a red micro light emitting diode, a green micro light emitting diode, and a blue micro light emitting diode. It should be understood that the number, color, and arrangement of the plurality of micro light emitting diodes in the pixel unit 125 can be changed according to design.
  • the PCB 130 and the frame portion 121 are electrically connected, for example, through a chip on film (COF) 140. That is, the COF 140 is connected to the PCB 130 and the frame portion 121.
  • the frame portion 122 can also be connected to a COF 150, where the COF 140 can be used to transmit source and drain signals, and the COF 150 can be used to transmit gate signals.
  • COF 140 and the COF The connection relationship and function of 150 can be varied according to the needs.
  • the PCB 130 and the frame portion 121 may also be electrically connected by other feasible technologies.
  • the second flexible micro light emitting diode display panel 200 includes a supporting board 210, a flexible micro light emitting diode substrate 220 and a PCB 230.
  • the supporting plate 210 has an upper surface 211, a lower surface 212, a side surface 213 and an upper arc chamfer 214.
  • the side surface 213 connects the upper surface 211 and the lower surface 212
  • the upper arc chamfer 214 connects the upper surface 211 and the side surface 213.
  • the supporting plate 210 may further include a lower arc chamfer 215, and the lower arc chamfer 215 connects the lower surface 212 and the side surface 213.
  • the flexible micro light emitting diode substrate 220 has a display area AA and a plurality of frame portions, such as the frame portion 221.
  • the display area AA is provided on the upper surface 211, and the display area AA is provided with a plurality of micro light emitting diodes.
  • the frame portion 223 is disposed on the upper arc chamfer 214 and the side surface 213. Taking FIG. 2 as an example, the frame portion 221 may contact the upper arc chamfer 214, the side surface 213, the lower arc chamfer 215 and part of the lower surface 212. Thereby, the frame portion 221 can be bent and extend to the lower surface 212.
  • the frame portions 222 may also have cut corners, so as to prevent the frame portions 221 from overlapping each other when they are bent. It should be understood that the cut angle can be varied in many ways according to requirements.
  • the plurality of micro light-emitting diodes form a plurality of pixel units 225, and there is a pixel unit pitch between two adjacent pixel units 225, and the radius of curvature of the upper arc chamfer 214 is less than half of the pixel unit pitch , Can refer to Figure 3 for example. It should be understood that the radius of curvature of the lower arc chamfer 215 may also be less than half of the pixel unit pitch.
  • a single pixel unit 225 may be composed of a red micro light emitting diode, a green micro light emitting diode, and a blue micro light emitting diode. It should be understood that the number, color, and arrangement of the plurality of micro light emitting diodes in the pixel unit 225 can be changed according to design.
  • the PCB 230 and the frame portion 221 are electrically connected, for example, through a chip on film (COF) 240. That is, the COF 240 is connected to the PCB 230 and the frame portion 221.
  • COF chip on film
  • the PCB 130 and the frame portion 121 may also be electrically connected by other feasible technologies.
  • the first flexible micro-light-emitting diode display panel 100 is taken as an example in FIG. 4 for illustration.
  • the frame portions 121 and 122 can be bent to all of the supporting plate 110.
  • the lower surface 112 is below the display area AA.
  • the PCB 130 is also disposed on the lower surface 112.
  • the frame portion of the flexible micro light emitting diode substrate 120 can be as small as possible.
  • the frame portion of the flexible micro light emitting diode substrate 220 of the second flexible micro light emitting diode display panel 200 can also be as small as possible. Zoom out. In this way, seamless splicing of the first flexible micro light emitting diode display panel 100 and the second flexible micro light emitting diode display panel 200 can be achieved.
  • the black glue 300 is provided between the first flexible micro light emitting diode display panel 100 and the second flexible micro light emitting diode display panel 200.
  • the black glue 300 is disposed between the frame portion 121 and the frame portion 221 for splicing and connecting the first flexible micro light emitting diode display panel 100 and the second flexible micro light emitting diode display panel 200.
  • the present invention uses the arc chamfering on the support plate and the chamfering of the frame part to match the flexible micro-light-emitting diode substrate to reduce the slits that do not have the display effect, thereby achieving seamless splicing of multiple micro-luminescence
  • the diode panel further realizes a large-size micro-light-emitting diode display device.

Abstract

一种柔性微发光二极管显示面板及一种微发光二极管显示装置。所述柔性微发光二极管显示面板包括：一支撑板，具有一上表面、一下表面、至少一侧表面及至少一上圆弧倒角，所述至少一侧表面连接所述上表面及所述下表面，所述至少一上圆弧倒角连接所述上表面与所述侧表面；一柔性微发光二极管基板，具有一显示区及至少一边框部，所述显示区设置于所述上表面，并且所述显示区设有多个微发光二极管，所述至少一边框部设置于所述至少一上圆弧倒角及所述侧表面；以及一PCB，与所述边框部电性连接。

Description

柔性微发光二极管显示面板及微发光二极管显示装置 技术领域
本发明涉及显示技术领域，特别是涉及一种柔性微发光二极管显示面板及一种微发光二极管显示装置。
 背景技术
微发光二极管(Micro LED)显示器由于相较OLED显示器具有发光效率高、色域高、亮度高、透明度高、功耗低、可靠性好、寿命长等有优点，有可能成为下一代显示器点。微发光二极管显示器的制作过程中，需要微发光二极管颗粒转移并且接合在TFT基板上，然而微发光二极管颗粒的转移及接合技术受限于设备开发的限制(例如，大量微发光二极管颗粒转移至TFT基板时的对准问题)，目前难以直接进行大尺寸的微发光二极管显示面板的制作。
 技术问题
因此，利用多个小尺寸的微发光二极管面板拼接来实现大尺寸的微发光二极管显示器的技术似乎是可行的开发方向，但是拼接多个微发光二极管面板之间不具显示功效的狭缝，因此如何达成无缝拼接，则成为实现大尺寸微发光二极管显示装置的关键。
故，有必要提供一种柔性微发光二极管显示面板及一种微发光二极管显示装置，以解决现有技术所存在的问题。
 技术解决方案
本发明的目的在于提供一种柔性微发光二极管显示面板及一种微发光二极管显示装置，藉此达成无缝拼接多个微发光二极管面板，进而实现大尺寸微发光二极管显示装置。
为达成本发明的前述目的，本发明提供一种微发光二极管显示装置，所述微发光二极管显示装置包括：
至少二柔性微发光二极管显示面板，其中每个所述柔性微发光二极管显示面板包括：
一支撑板，具有一上表面、一下表面、至少一侧表面及至少一上圆弧倒角，所述至少一侧表面连接所述上表面及所述下表面，所述至少一上圆弧倒角连接所述上表面与所述侧表面；
一柔性微发光二极管基板，具有一显示区及至少一边框部，所述显示区设置于所述上表面，并且所述显示区设有多个微发光二极管，所述至少一边框部可以弯折并且延伸至所述下表面，所述至少一边框部接触所述至少一上圆弧倒角及所述侧表面；以及
一印刷电路板，与所述边框部电性连接。
根据本发明一实施例，所述多个微发光二极管形成多个像素单元，并且相邻的二个像素单元之间具有一像素单元间距，所述支撑板的所述上圆弧倒角的曲率半径小于所述像素单元间距的一半。
根据本发明一实施例，所述边框部具有至少一切角。
根据本发明一实施例，所述印刷电路板设置于所述支撑板的所述下表面。
根据本发明一实施例，所述支撑板还包括至少一下圆弧倒角，所述至少一下圆弧倒角连接所述下表面与所述侧表面，所述边框部接触所述下圆弧倒角。
根据本发明一实施例，所述至少二柔性微发光二极管显示面板之间设有一黑胶。
根据本发明一实施例，所述黑胶设置于所述至少二柔性微发光二极管显示面板各自的所述边框部之间。
本发明还提供一种柔性微发光二极管显示面板，所述柔性微发光二极管显示面板包括：
一支撑板，具有一上表面、一下表面、至少一侧表面及至少一上圆弧倒角，所述至少一侧表面连接所述上表面及所述下表面，所述至少一上圆弧倒角连接所述上表面与所述侧表面；
一柔性微发光二极管基板，具有一显示区及至少一边框部，所述显示区设置于所述上表面，并且所述显示区设有多个微发光二极管，所述至少一边框部设置于所述至少一上圆弧倒角及所述侧表面；以及
一印刷电路板(PCB)，与所述边框部电性连接。
根据本发明一实施例，所述多个微发光二极管形成多个像素单元，并且相邻的二个像素单元之间具有一像素单元间距，所述支撑板的所述上圆弧倒角的曲率半径小于所述像素单元间距的一半。
根据本发明一实施例，所述边框部具有至少一切角。
根据本发明一实施例，所述印刷电路板(PCB)设置于所述支撑板的所述下表面。
根据本发明一实施例，所述支撑板还包括至少一下圆弧倒角，所述至少一下圆弧倒角连接所述下表面与所述侧表面。
本发明还提供一种微发光二极管显示装置，所述微发光二极管显示装置包括：
至少二柔性微发光二极管显示面板，其中每个所述柔性微发光二极管显示面板包括：
一支撑板，具有一上表面、一下表面、至少一侧表面及至少一上圆弧倒角，所述至少一侧表面连接所述上表面及所述下表面，所述至少一上圆弧倒角连接所述上表面与所述侧表面；
一柔性微发光二极管基板，具有一显示区及至少一边框部，所述显示区设置于所述上表面，并且所述显示区设有多个微发光二极管，所述至少一边框部设置于所述至少一上圆弧倒角及所述侧表面；以及
一印刷电路板(PCB)，与所述边框部电性连接。
根据本发明一实施例，所述多个微发光二极管形成多个像素单元，并且相邻的二个像素单元之间具有一像素单元间距，所述支撑板的所述上圆弧倒角的曲率半径小于所述像素单元间距的一半。
根据本发明一实施例，所述边框部具有至少一切角。
根据本发明一实施例，所述印刷电路板(PCB)设置于所述支撑板的所述下表面。
根据本发明一实施例，所述至少二柔性微发光二极管显示面板之间设有一黑胶。
 有益效果
本发明的有益效果为：本发明通过支撑板上的圆弧倒角及边框部的切角，搭配柔性微发光二极管基板来缩小不具显示功效的狭缝，藉此达成无缝拼接多个微发光二极管面板，进而实现大尺寸微发光二极管显示装置。
 附图说明
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：
图1是本发明一实施例的一种微发光二极管显示装置的结构侧视示意图。
图2是本发明一实施例的一种柔性微发光二极管显示面板在展开状态的一上视图。
图3是图1实施例中上圆弧倒角的侧视图。
图4是本发明一实施例的一种柔性微发光二极管显示面板在弯折状态的一上视图。
 本发明的实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
请参照图1至图4，图1是本发明一实施例的一种微发光二极管显示装置的结构侧视示意图。图2是本发明一实施例的一种柔性微发光二极管显示面板在展开状态的一上视图。图3是图1实施例中上圆弧倒角的侧视图。图4是本发明一实施例的一种柔性微发光二极管显示面板在弯折状态的一上视图。
如图1所示，本发明一实施例提供了一种微发光二极管显示装置，所述微发光二极管显示装置包括：一第一柔性微发光二极管显示面板100、一第二柔性微发光二极管显示面板200及一黑胶300。所述微发光二极管显示装置可以是拼接式微发光二极管显示装置。
所述第一柔性微发光二极管显示面板100包括一支撑板110、一柔性微发光二极管基板120及一印刷电路板(PCB) 130。
所述支撑板110具有一上表面111、一下表面112、一侧表面113及一上圆弧倒角114。所述侧表面113连接所述上表面111及所述下表面112，所述上圆弧倒角114连接所述上表面111与所述侧表面113。此外，所述支撑板110还可以包括一下圆弧倒角115，所述下圆弧倒角115连接所述下表面112与所述侧表面113。
如图1及图2所示，所述柔性微发光二极管基板120具有一显示区AA及四个边框部121、122、123、124。所述显示区AA设置于所述上表面111，并且所述显示区AA设有多个微发光二极管。所述边框部121设置于所述上圆弧倒角114及所述侧表面113。以图1为例，所述边框部121可以接触所述上圆弧倒角114、所述侧表面113、所述下圆弧倒角115及部分的所述下表面112。藉此，所述边框部121、122、123、124可以弯折并且延伸至所述下表面112。所述边框部122、123、124还可以各自具有切角122a、123a、124a、124b，以避免所述边框部121、122、123、124在弯折时彼此重叠。应当理解的是，所述切角可以依照需求而有多种变化。此外，所述柔性微发光二极管基板120可以是多层的膜层结构，其中可以包括柔性有机膜层。例如使用聚酰亚胺(Polyimide, PI)做为基底来建构所述微发光二极管基板120。
如图1及图3所示，所述多个微发光二极管形成多个像素单元125，并且相邻的二个像素单元125之间具有一像素单元间距D1，所述上圆弧倒角114的曲率半径R1小于所述像素单元间距D1的一半。应当理解的是，所述下圆弧倒角115的曲率半径也可以小于所述像素单元间距的一半。举例来说，单一个所述像素单元125可以由一红色微发光二极管、一绿色微发光二极管及一蓝色微发光二极管所构成。应当理解的是，所述像素单元125中的所述多个微发光二极管的数量、颜色及排列可以依照设计而变化。
所述PCB 130与所述边框部121电性连接，例如通过覆晶薄膜(COF) 140。即，所述COF 140连接所述PCB 130及所述边框部121。此外，所述边框部122也可与一COF 150连接，其中所述COF 140可以用来传输源漏极的信号，所述COF 150可以用来传输闸极信号。应当理解的是，所述COF 140及所述COF 150的连接关系及作用可以依照需求产生多种变化。此外，所述PCB 130与所述边框部121也可以通过其它可行的技术来实现电性连接。
所述第二柔性微发光二极管显示面板200包括一支撑板210、一柔性微发光二极管基板220及一PCB 230。
所述支撑板210具有一上表面211、一下表面212、一侧表面213及一上圆弧倒角214。所述侧表面213连接所述上表面211及所述下表面212，所述上圆弧倒角214连接所述上表面211与所述侧表面213。此外，所述支撑板210还可以包括一下圆弧倒角215，所述下圆弧倒角215连接所述下表面212与所述侧表面213。
所述柔性微发光二极管基板220具有一显示区AA及多个边框部，例如所述边框部221。所述显示区AA设置于所述上表面211，并且所述显示区AA设有多个微发光二极管。所述边框部223设置于所述上圆弧倒角214及所述侧表面213。以图2为例，所述边框部221可以接触所述上圆弧倒角214、所述侧表面213、所述下圆弧倒角215及部分的所述下表面212。藉此，所述边框部221可以弯折并且延伸至所述下表面212。所述边框部222还可以各自具有切角，以避免所述多个边框部221在弯折时彼此重叠。应当理解的是，所述切角可以依照需求而有多种变化。
所述多个微发光二极管形成多个像素单元225，并且相邻的二个像素单元225之间具有一像素单元间距，所述上圆弧倒角214的曲率半径小于所述像素单元间距的一半，可参照图3示例。应当理解的是，所述下圆弧倒角215的曲率半径也可以小于所述像素单元间距的一半。举例来说，单一个所述像素单元225可以由一红色微发光二极管、一绿色微发光二极管及一蓝色微发光二极管所构成。应当理解的是，所述像素单元225中的所述多个微发光二极管的数量、颜色及排列可以依照设计而变化。
所述PCB 230与所述边框部221电性连接，例如通过覆晶薄膜(COF) 240。即，所述COF 240连接所述PCB 230及所述边框部221。此外，所述PCB 130与所述边框部121也可以通过其它可行的技术来实现电性连接。
如图4所示，图4中以所述第一柔性微发光二极管显示面板100为例来说明，在弯折状态下，所述边框部121、122可以弯折至所述支撑板110的所述下表面112，即所述显示区AA的下方。所述PCB 130也设置于所述下表面112。藉此，所述柔性微发光二极管基板120的边框部可以尽可能缩小，同理，所述第二柔性微发光二极管显示面板200的所述柔性微发光二极管基板220的边框部也可以尽可能的缩小。如此一来，就可以达成无缝拼接所述第一柔性微发光二极管显示面板100与所述第二柔性微发光二极管显示面板200。
此外，如图1所示，所述第一柔性微发光二极管显示面板100与所述第二柔性微发光二极管显示面板200之间设有所述黑胶300。所述黑胶300设置于所述边框部121与所述边框部221之间，用以拼接连接所述第一柔性微发光二极管显示面板100与所述第二柔性微发光二极管显示面板200。
本发明的有益效果为：本发明通过支撑板上的圆弧倒角及边框部的切角，搭配柔性微发光二极管基板来缩小不具显示功效的狭缝，藉此达成无缝拼接多个微发光二极管面板，进而实现大尺寸微发光二极管显示装置。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (17)

  1. 一种微发光二极管显示装置，其包含：
    至少二柔性微发光二极管显示面板，其中每个所述柔性微发光二极管显示面板包括：
    一支撑板，具有一上表面、一下表面、至少一侧表面及至少一上圆弧倒角，所述至少一侧表面连接所述上表面及所述下表面，所述至少一上圆弧倒角连接所述上表面与所述侧表面；
    一柔性微发光二极管基板，具有一显示区及至少一边框部，所述显示区设置于所述上表面，并且所述显示区设有多个微发光二极管，所述至少一边框部可以弯折并且延伸至所述下表面，所述至少一边框部接触所述至少一上圆弧倒角及所述侧表面；以及
    一印刷电路板，与所述边框部电性连接。
  2. 如权利要求1所述的微发光二极管显示装置，其中所述多个微发光二极管形成多个像素单元，并且相邻的二个像素单元之间具有一像素单元间距，所述支撑板的所述上圆弧倒角的曲率半径小于所述像素单元间距的一半。
  3. 如权利要求1所述的微发光二极管显示装置，其中所述边框部具有至少一切角。
  4. 如权利要求1所述的微发光二极管显示装置，其中所述印刷电路板设置于所述支撑板的所述下表面。
  5.    如权利要求1所述的微发光二极管显示装置，其中所述支撑板还包括至少一下圆弧倒角，所述至少一下圆弧倒角连接所述下表面与所述侧表面，所述边框部接触所述下圆弧倒角。
  6. 如权利要求1所述的微发光二极管显示装置，其中所述至少二柔性微发光二极管显示面板之间设有一黑胶。
  7. 如权利要求6所述的微发光二极管显示装置，其中所述黑胶设置于所述至少二柔性微发光二极管显示面板各自的所述边框部之间。
  8.    一种柔性微发光二极管显示面板，其包含：
    一支撑板，具有一上表面、一下表面、至少一侧表面及至少一上圆弧倒角，所述至少一侧表面连接所述上表面及所述下表面，所述至少一上圆弧倒角连接所述上表面与所述侧表面；
    一柔性微发光二极管基板，具有一显示区及至少一边框部，所述显示区设置于所述上表面，并且所述显示区设有多个微发光二极管，所述至少一边框部设置于所述至少一上圆弧倒角及所述侧表面；以及
    一印刷电路板，与所述边框部电性连接。
  9.    如权利要求8所述的柔性微发光二极管显示面板，其中所述多个微发光二极管形成多个像素单元，并且相邻的二个像素单元之间具有一像素单元间距，所述支撑板的所述上圆弧倒角的曲率半径小于所述像素单元间距的一半。
  10. 如权利要求8所述的柔性微发光二极管显示面板，其中所述边框部具有至少一切角。
  11. 如权利要求8所述的柔性微发光二极管显示面板，其中所述印刷电路板设置于所述支撑板的所述下表面。
  12. 如权利要求8所述的柔性微发光二极管显示面板，其中所述支撑板还包括至少一下圆弧倒角，所述至少一下圆弧倒角连接所述下表面与所述侧表面。
  13. 一种微发光二极管显示装置，其包含：
    至少二柔性微发光二极管显示面板，其中每个所述柔性微发光二极管显示面板包括：
    一支撑板，具有一上表面、一下表面、至少一侧表面及至少一上圆弧倒角，所述至少一侧表面连接所述上表面及所述下表面，所述至少一上圆弧倒角连接所述上表面与所述侧表面；
    一柔性微发光二极管基板，具有一显示区及至少一边框部，所述显示区设置于所述上表面，并且所述显示区设有多个微发光二极管，所述至少一边框部设置于所述至少一上圆弧倒角及所述侧表面；以及
    一印刷电路板，与所述边框部电性连接。
  14. 如权利要求13所述的微发光二极管显示装置，其中所述多个微发光二极管形成多个像素单元，并且相邻的二个像素单元之间具有一像素单元间距，所述支撑板的所述上圆弧倒角的曲率半径小于所述像素单元间距的一半。
  15. 如权利要求14所述的微发光二极管显示装置，其中所述边框部具有至少一切角。
  16. 如权利要求13所述的微发光二极管显示装置，其中所述印刷电路板设置于所述支撑板的所述下表面。
  17. 如权利要求13所述的微发光二极管显示装置，其中所述至少二柔性微发光二极管显示面板之间设有一黑胶。
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