WO2021027166A1 - 显示面板及其制备方法、显示装置 - Google Patents

显示面板及其制备方法、显示装置 Download PDF

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Publication number
WO2021027166A1
WO2021027166A1 PCT/CN2019/118853 CN2019118853W WO2021027166A1 WO 2021027166 A1 WO2021027166 A1 WO 2021027166A1 CN 2019118853 W CN2019118853 W CN 2019118853W WO 2021027166 A1 WO2021027166 A1 WO 2021027166A1
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Prior art keywords
layer
light
hole
display panel
thin film
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Ceased
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PCT/CN2019/118853
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English (en)
French (fr)
Inventor
张福阳
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/754,304 priority Critical patent/US11758792B2/en
Publication of WO2021027166A1 publication Critical patent/WO2021027166A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/66—Details of globes or covers forming part of the light source
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1633—Constructional details or arrangements of portable computers not specific to the type of enclosures covered by groups G06F1/1615 - G06F1/1626
    • G06F1/1637—Details related to the display arrangement, including those related to the mounting of the display in the housing
    • G06F1/1641—Details related to the display arrangement, including those related to the mounting of the display in the housing the display being formed by a plurality of foldable display components
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1633—Constructional details or arrangements of portable computers not specific to the type of enclosures covered by groups G06F1/1615 - G06F1/1626
    • G06F1/1637—Details related to the display arrangement, including those related to the mounting of the display in the housing
    • G06F1/1652—Details related to the display arrangement, including those related to the mounting of the display in the housing the display being flexible, e.g. mimicking a sheet of paper, or rollable
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets
    • H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
    • H04M1/026—Details of the structure or mounting of specific components
    • H04M1/0264—Details of the structure or mounting of specific components for a camera module assembly
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets
    • H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
    • H04M1/026—Details of the structure or mounting of specific components
    • H04M1/0266—Details of the structure or mounting of specific components for a display module assembly
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/341—Short-circuit prevention
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the invention relates to the field of display, in particular to a display panel, a preparation method thereof, and a display device.
  • the purpose of the present invention is to solve the technical problem of low light transmittance in the imaging area of the existing under-screen imaging display panel.
  • the present invention provides a display panel, the display panel is divided into a display area and a camera area, the camera area includes: a flexible substrate; a first through hole penetrating through the flexible substrate; The layer is arranged in the first through hole; the inorganic film layer is arranged on the surface of one side of the flexible substrate; the second through hole penetrates the inorganic film layer and is arranged opposite to the first through hole.
  • the second light-transmitting layer is arranged in the second through hole; and the image capturing device is arranged opposite to the first light-transmitting layer and is arranged on the first light-transmitting layer away from the second light-transmitting layer The surface on one side of the layer.
  • the material of the first light transmitting layer is a transparent resin material; and/or the material of the second light transmitting layer is a transparent resin material.
  • the transparent resin material includes a transparent polyimide material.
  • the visible light transmittance of the transparent polyimide material is 95%-100%.
  • the image acquisition device includes a camera, the central axis of which is on the same straight line with the central axis of the first light-transmitting layer.
  • a method for preparing a display panel includes the following steps: a rigid substrate providing step, providing a rigid substrate; a flexible substrate preparation step, preparing a flexible substrate on the upper surface of the rigid substrate; a first etching step, etching Part of the flexible substrate is etched to form a first through hole; the first light-transmitting layer preparation step is to prepare the first light-transmitting layer in the first through hole; the first thin-film transistor preparation step is to form the upper surface of the flexible substrate A part of thin film transistors are prepared, including an inorganic film layer; the second etching step is to partially etch the inorganic film layer to form a second through hole, and the second through hole is arranged opposite to the first through hole; Two light-transmitting layer preparation steps, the second light-transmitting layer is prepared in the second through hole; the second thin-film transistor preparation step, the complete thin-film transistor is prepared on the upper surface of the inorganic film layer; the hard substrate is peeled off Step, peeling off the hard substrate; and setting the
  • a transparent resin material is filled in the first through hole, and after curing, a first light-transmitting layer is formed.
  • a transparent resin material is filled in the second through hole, and after curing, a second light-transmitting layer is formed.
  • the preparation method of the display panel further includes an anode layer preparation step, and an anode layer is prepared on the upper surface of the thin film transistor.
  • the present invention also provides a display device including the display panel described above.
  • the technical effect of the present invention is to improve the transparency and light transmittance of each film layer in the imaging area, increase the light intensity of the incident light in the imaging area, and then improve the imaging performance of the under-screen imaging electronic equipment, so as to meet the needs of users for under-screen imaging. high demand.
  • FIG. 1 is a schematic diagram of the structure of a display panel according to an embodiment of the present invention.
  • FIG. 2 is a flowchart of a method for manufacturing a display panel according to an embodiment of the invention
  • FIG. 3 is a schematic diagram of the structure of the display panel after the first etching step according to the embodiment of the present invention.
  • FIG. 4 is a flowchart of a first manufacturing step of a thin film transistor according to an embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of the display panel after the second etching step according to the embodiment of the present invention.
  • FIG. 6 is a flowchart of the second manufacturing step of the thin film transistor according to the embodiment of the present invention.
  • Buffer layer 32. Active layer; 33. First gate insulating layer; 34. Gate layer; 35. Second gate insulating layer; 36. Dielectric layer; 37. Barrier layer; 38. Source and drain Polar layer; 39. Flat layer;
  • the component can be directly placed on the other component; there may also be an intermediate component on which the component is placed , And the intermediate component is placed on another component.
  • a component is described as “installed to” or “connected to” another component, both can be understood as directly “installed” or “connected”, or a component is “installed to” or “connected to” through an intermediate component Another component.
  • This embodiment provides a display device, including a display panel as shown in FIG. 1.
  • the display panel includes a flexible substrate 1, a first light-transmitting layer 2, a thin film transistor 3, a second light-transmitting layer 4, an anode layer 5, and Image capture device 6.
  • the display panel is divided into a display area 10 and a camera area 20.
  • the display area 10 is used for display, and the camera area 2 can receive external visible light to realize the camera function.
  • the display area 10 includes a first flexible substrate 11, a thin film transistor 3 and an anode layer 5.
  • the imaging area 20 includes a second flexible substrate 12, a first transparent layer 2, a second transparent layer 4, and a camera collection device 6.
  • the material of the flexible substrate 1 is a polyimide material, and the non-average transmittance of the polyimide material in the visible light range is 65% to 80%.
  • a first through hole 13 (see FIG. 3) is provided in the imaging area of the flexible substrate 1, the first through hole 13 penetrates the flexible substrate 1, and the first through hole 13 is used to provide a channel for the subsequent first light-transmitting layer.
  • the first light-transmitting layer 2 is provided in the first through hole 13 and filled with the first through hole 13.
  • the material of the first light-transmitting layer 2 is a transparent resin material. In this embodiment, it is preferably a colorless transparent polyamide.
  • the visible light transmittance of the colorless and transparent polyimide material is 95% to 100%, so that the visible light transmittance of the first light-transmitting layer 2 is higher than that of the flexible substrate 1.
  • the visible light transmittance of the imaging area 20 is improved. Further improve the visible light transmittance of the display device.
  • the thin film transistor 3 is provided on the upper surface of the flexible substrate 1, and the thin film transistor 3 is provided in the display area 10.
  • the thin film transistor 3 includes a buffer layer 31, an active layer 32, a first gate insulating layer 33, a gate layer 34, Two gate insulating layers 35, dielectric layers 36, barrier layers 37, source and drain layers 38, and flat layers 39.
  • the buffer layer 31 is provided on the upper surface of the flexible substrate 1, and the buffer layer 31 serves as a buffer.
  • the material of the buffer layer 31 is silicon dioxide SiO 2 or silicon nitride SiN x , which can be a single layer of SiO 2 film or silicon dioxide.
  • a multilayer stack of silicon SiO 2 and silicon nitride SiN x , and the silicon dioxide SiO 2 film layer is arranged on the top layer.
  • the active layer 32 is provided on the upper surface of the buffer layer 31.
  • the active layer 32 includes a semiconductor part and a conductor part.
  • the conductor part is provided outside the semiconductor part, and the semiconductor part maintains semiconductor characteristics.
  • the material of the active layer 32 is an oxide semiconductor, such as indium gallium zinc oxide IGZO, with a thickness of 300A to 500A.
  • the first gate insulating layer 33 is provided on the upper surface of the active layer 32 and the buffer layer 31, and the first gate insulating layer 33 may be a single layer of SiO 2 film or silicon dioxide SiO 2 , silicon nitride SiN x Multiple layers are stacked, and the silicon dioxide SiO 2 film layer is arranged on the bottom layer.
  • the first gate insulating layer 33 functions as an insulating layer to prevent short circuit problems in the thin film transistor 3.
  • the gate layer 34 is provided on the upper surface of the first gate insulating layer 33 and opposite to the active layer 31.
  • the material of the gate layer 34 is metal, such as copper Cu or molybdenum Mo.
  • the second gate insulating layer 35 is provided on the upper surfaces of the first gate insulating layer 33 and the gate layer 34.
  • the second gate insulating layer 33 may be a single layer of SiO 2 film or silicon dioxide SiO 2 , silicon nitrogen Multi-layer stack of SiN x compound, and the silicon dioxide SiO 2 film layer is arranged on the bottom layer.
  • the second gate insulating layer 35 functions as an insulating layer to prevent short circuit problems in the thin film transistor 3.
  • the dielectric layer 36 is provided on the upper surface of the second gate insulating layer 35.
  • the dielectric layer 36 is provided with two or more dielectric layer vias.
  • the dielectric layer vias pass through the dielectric layer 36 and are connected to each other.
  • the conductor portions of the source layer 32 are arranged oppositely, and the dielectric layer vias are used to provide channels for the subsequent source and drain layers.
  • the barrier layer 37 is provided on the upper surface of the dielectric layer 36 to block the edge layer and prevent short circuit problems in the thin film transistor 3.
  • the source-drain layer 38 is provided in the dielectric layer via hole and extends to the upper surface of the barrier layer 37.
  • the source-drain layer 38 is connected to the conductor part of the active layer 32 to form the source-drain layer 38 and the active layer.
  • the source and drain layer 38 is made of metal.
  • the flat layer 39 is provided on the upper surface of the source and drain layer 38 and the barrier layer 37.
  • the flat layer 39 is used to ensure the flatness of the surface of the thin film transistor 3, facilitate subsequent film preparation, and avoid the occurrence of film detachment caused by uneven surface technical problem.
  • the buffer layer 31, the first gate insulating layer 33, the second gate insulating layer 35, and the dielectric layer 36 of the thin film transistor 3 constitute an inorganic film layer which is provided on the upper surface of the flexible substrate 1.
  • the visible light transmittance of the film is 85%-95%.
  • the inorganic film layer is provided with a second through hole 41 (see FIG. 5), the second through hole 41 penetrates the inorganic film layer, and the second through hole 41 provides a channel for the subsequent second light-transmitting layer.
  • the second light-transmitting layer 41 is provided in the second through hole 41 and is filled with the second through hole 41.
  • the material of the second light-transmitting layer 4 is a transparent resin material. In this embodiment, it is preferably a colorless and transparent polyamide.
  • the visible light transmittance of the colorless and transparent polyimide material is 95%-100%, so that the visible light transmittance of the second light-transmitting layer 4 is higher than that of the inorganic film layer , Can improve the visible light transmittance of the imaging area 20. Further improve the visible light transmittance of the display device.
  • the anode layer 5 is provided on the upper surface of the flat layer 39, passes through the flat layer 39, and is electrically connected to the source and drain layer 38 to provide circuit support for the light emission of the subsequent pixel light emitting layer.
  • the display panel also includes a pixel definition layer, a light-emitting layer, a cathode layer and other film layers.
  • the pixel definition layer, the light-emitting layer, the cathode layer and other film layers are all provided above the anode layer 5, all of which belong to the existing The technology is not described in detail in this embodiment.
  • the image acquisition device 6 includes a camera, and the central axis of the camera is on the same line as the central axis of the first light-transmitting layer 2.
  • the visible light enters the display panel from above the camera area 20, passes through each film layer, and is at the camera. Imaging, realize the camera function under the screen.
  • the technical effect of the display device in this embodiment is that a colorless and transparent polyimide material with high visible light transmittance is used to improve the transparency and light transmittance of each film layer in the imaging area, and increase the intensity of incident light in the imaging area. Furthermore, the camera performance of the under-screen camera-type electronic equipment is improved to meet the high demand of users for under-screen camera.
  • this embodiment also provides a method for manufacturing a display panel, including steps S1 to S11.
  • the step of providing a rigid substrate provides a rigid substrate, and the material of the rigid substrate may be glass.
  • the flexible substrate preparation step is to prepare a flexible substrate on the upper surface of the rigid substrate, the material of the flexible substrate is a polyimide material, and the non-average transmittance of the polyimide material in the visible light range It is 65% ⁇ 80%.
  • first etching step of S3 laser technology is used to etch part of the flexible substrate to form the first through hole 13 (see FIG. 3).
  • the first through hole 13 penetrates the flexible substrate 1, and the first through hole 13 is used to provide a channel for the subsequent first light-transmitting layer.
  • the first light-transmitting layer preparation step filling the first through hole with a transparent resin material, in this embodiment, it is preferably a colorless and transparent polyimide material, and after curing, the first light-transmitting layer is formed .
  • a transparent resin material in this embodiment, it is preferably a colorless and transparent polyimide material, and after curing, the first light-transmitting layer is formed .
  • the visible light transmittance of the colorless transparent polyimide material can reach 95%-100%, so that the visible light transmittance of the first light-transmitting layer is higher than the visible light transmittance of the flexible substrate.
  • the first preparation steps of the thin film transistors include S51 ⁇ S56 to form the display panel shown in FIG. structure.
  • a buffer layer 31 is prepared on the upper surface of the flexible substrate 1, and the buffer layer 31 serves as a buffer.
  • the material of the buffer layer 31 is silicon dioxide SiO 2 or silicon nitride SiN x , which can be a single layer
  • the SiO 2 film layer or the multilayer stack of silicon dioxide SiO 2 and silicon nitride SiN x , and the silicon dioxide SiO 2 film layer is arranged on the top layer.
  • S52 is an active layer preparation step.
  • An oxide semiconductor material such as indium gallium zinc oxide IGZO, is deposited on the upper surface of the buffer layer 31, and the active layer 32 is formed after conducting and patterning treatments.
  • the thickness of the active layer 32 It is 300A ⁇ 500A.
  • S53 The step of preparing the first gate insulating layer, depositing a single layer of SiO 2 film or a multilayer stack of silicon dioxide SiO 2 and silicon nitride SiN x on the upper surfaces of the active layer 32 and the buffer layer 31, and the silicon dioxide
  • the silicon SiO 2 film layer is arranged on the bottom layer to form the first gate insulating layer 33.
  • the first gate insulating layer 33 functions as an insulating layer to prevent short circuit problems in the thin film transistor 3.
  • a layer of metal material such as copper Cu or molybdenum Mo, is deposited on the upper surface of the first gate insulating layer 33. After patterning, the gate layer 34, the gate layer 34 and the The source layer 31 is arranged relatively.
  • a dielectric layer 36 is prepared on the upper surface of the second gate insulating layer 35.
  • the dielectric layer 36 is an inorganic material and can function as an insulating layer to prevent short circuit problems in the thin film transistor 3.
  • the second etching step, the buffer layer 31, the first gate insulating layer 33, the second gate insulating layer 35, and the dielectric layer 36 prepared in the first preparation step of the thin film transistor form an inorganic film layer (see Figure 5), the visible light transmittance of the inorganic film layer is 85%-95%.
  • dry etching is used to etch the inorganic film layer to form a second through hole 41. Because the first through hole and the second through hole 41 are not completed in the same process, the first The diameter of the second through hole 41 is not necessarily the same as the diameter of the first through hole.
  • the second through hole 41 provides a channel for subsequent preparation of the second transparent layer.
  • the second light-transmitting layer preparation step filling the second through hole with a transparent resin material.
  • a transparent resin material In this embodiment, it is preferably a colorless and transparent polyimide material.
  • a second light-transmitting layer is formed .
  • the visible light transmittance of the colorless transparent polyimide material can reach 95%-100%, so that the visible light transmittance of the second light-transmitting layer is higher than the visible light transmittance of the inorganic film layer.
  • the second preparation step of the thin film transistor, the related film layer of the thin film transistor is continuously prepared above the dielectric layer and the second light-transmitting layer, as shown in FIG. 6, the second preparation step of the thin film transistor includes S81 ⁇ S83.
  • a barrier layer is prepared on the upper surface of the dielectric layer, and the barrier layer functions as a barrier layer to prevent short circuits inside the thin film transistor.
  • a source-drain layer is prepared on the upper surface of the barrier layer, and the source-drain layer sequentially passes through the barrier layer, the dielectric layer, and the second gate insulating layer.
  • the layer and the first gate insulating layer are electrically connected to the active layer to form an electrical connection between the source and drain layer and the active layer.
  • the material of the source and drain layer is metal.
  • a flat layer is prepared on the upper surface of the source and drain layer and the barrier layer, and the flat layer is used to ensure the flatness of the surface of the thin film transistor, facilitate the preparation of the subsequent film layer, and avoid the occurrence of causes Technical problem of film detachment caused by uneven surface.
  • the first preparation step of the thin film transistor and the second preparation step of the thin film transistor produce a thin film transistor, and the area where the thin film transistor is located is a display area, which can be used for display.
  • Anode layer preparation step an anode layer is prepared on the upper surface of the flat layer, and at the same time, the anode layer penetrates the flat layer and is electrically connected to the source and drain layer to realize the anode layer and the thin film
  • the electrical connections between the transistors provide electrical signals for subsequent pixels to emit light.
  • S10 is the step of peeling off the hard substrate, using laser peeling technology or mechanical peeling technology to peel the hard substrate.
  • an image acquisition device is installed below the first light-transmitting layer, the image acquisition device includes a camera, and the area where the camera is located is the camera area.
  • the first light-transmitting layer and the second light-transmitting layer are made of colorless and transparent polyimide, the visible light transmittance of the polyimide material can reach 95% to 100%, so the visible light transmittance of the imaging area is greatly improved , To improve the camera performance of the under-screen camera-type display device to meet the high demand of users for under-screen camera.
  • the technical effect of the preparation method of the display panel in this embodiment is that the film layer above the camera is changed to a colorless and transparent polyimide material, which improves the transparency and light transmittance of each film layer in the imaging area, and increases the incident light in the imaging area.
  • the camera performance of under-screen electronic equipment is improved.

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Abstract

本发明提供一种显示面板及其制备方法、显示装置，所述显示面板被分成显示区及摄像区，所述摄像区包括：第一通孔、第一透光层、无机膜层、第二通孔、第二透光层以及影像采集装置。所述显示面板的制备方法包括硬质基板提供步骤、柔性基板制备步骤、第一刻蚀步骤、第一透光层制备步骤、薄膜晶体管第一制备步骤、第二刻蚀步骤、第二透光层制备步骤、薄膜晶体管第二制备步骤、硬质基板剥离步骤以及影像采集装置设置步骤。

Description

显示面板及其制备方法、显示装置 技术领域
本发明涉及显示领域，特别涉及一种显示面板及其制备方法、显示装置。
 背景技术
现阶段显示技术的发展日新月异，各种屏幕技术的出现为电子终端提供的无限可能。特别是以OLED(有机发光二极管)为代表的显示技术的快速应用，各种以“全面屏”、“异形屏”、“屏下发声”、“屏下指纹”等为卖点的移动终端开始快速推广。现阶段，各大手机、面板厂商推出了许多以“全面屏”为卖点的产品，但是大部分还是采用“刘海屏”“水滴屏”的近似全面屏的设计，这是因为前置照相头的存在，要为其留取一定的区域而做的不得已的选择。
一直以来，真正的全面屏呼声越来越高，而从显示技术的角度看，主要难点之一就是平衡前置摄像头与显示面板的矛盾，即实现不破坏面板的整体性的同时保留设备的前置摄像头。其中的选择就是将摄像头放置在面板的下方。而作为柔性显示面板来讲，由于现阶段大规模采用的柔性基板的可见光透过率普遍较低，将摄像头置于面板下方时外界可见光难以进入摄像单元成像。
 技术问题
本发明的目的在于，解决现有的屏下摄像式显示面板存在的摄像区透光率不高的技术问题。
 技术解决方案
为实现上述目的，本发明提供一种显示面板，所述显示面板被分成显示区及摄像区，所述摄像区包括：柔性基板；第一通孔，贯穿于所述柔性基板；第一透光层，设于所述第一通孔内；无机膜层，设于所述柔性基板一侧的表面；第二通孔，贯穿于所述无机膜层，且与所述第一通孔相对设置；第二透光层，设于所述第二通孔内；以及影像采集装置，与所述第一透光层相对设置，且设于所述第一透光层远离所述第二透光层一侧的表面。
进一步地，所述第一透光层的材质为透明树脂材料；和/或，所述第二透光层的材质为透明树脂材料。
进一步地，所述透明树脂材料包括透明聚酰亚胺材料。
进一步地，所述透明聚酰亚胺材料的可见光透过率为95%~100%。
进一步地，所述影像采集装置包括摄像头，其中心轴线与所述第一透光层的中心轴线在同一直线上。
一种显示面板的制备方法，包括以下步骤：硬质基板提供步骤，提供一硬质基板；柔性基板制备步骤，在所述硬质基板的上表面制备出柔性基板；第一刻蚀步骤，刻蚀部分柔性基板，形成第一通孔；第一透光层制备步骤，在所述第一通孔内制备出第一透光层；薄膜晶体管第一制备步骤，在所述柔性基板的上表面制备出部分薄膜晶体管，包括无机膜层；第二刻蚀步骤，部分地刻蚀所述无机膜层，形成第二通孔，所述第二通孔与所述第一通孔相对设置；第二透光层制备步骤，在所述第二通孔内制备出第二透光层；薄膜晶体管第二制备步骤，在所述无机膜层的上表面制备出完整的薄膜晶体管；硬质基板剥离步骤，剥离所述硬质基板；以及影像采集装置设置步骤，在所述第一透光层的下表面设置影像采集装置。
进一步地，在所述第一透光层制备步骤中，在所述第一通孔中填充透明树脂材料，固化后，形成第一透光层。
进一步地，在所述第二透光层制备步骤中，在所述第二通孔中填充透明树脂材料，固化后，形成第二透光层。
进一步地，在所述薄膜晶体管第二制备步骤之后，所述显示面板的制备方法还包括阳极层制备步骤，在所述薄膜晶体管的上表面制备出阳极层。
为实现上述目的，本发明还提供一种显示装置，包括前文所述的显示面板。
 有益效果
本发明的技术效果在于，提高摄像区各膜层的透明度和透光率，增加摄像区入射光的光强，进而改善屏下摄像式电子设备的摄像性能，用以满足用户对屏下摄像的高需求。
 附图说明
图1为本发明实施例所述显示面板的结构示意图；
图2为本发明实施例所述显示面板的制备方法的流程图；
图3为本发明实施例所述第一刻蚀步骤之后显示面板的结构示意图；
图4为本发明实施例所述薄膜晶体管第一制备步骤的流程图；
图5为本发明实施例所述第二刻蚀步骤之后显示面板的结构示意图；
图6为本发明实施例所述薄膜晶体管第二制备步骤的流程图。
部分组角标识如下：
100、硬质基板；
1、柔性基板；2、第一透光层；3、薄膜晶体管；4、第二透光层；5、阳极层；6、影像采集装置；
11、第一柔性基板；12、第二柔性基板；13、第一通孔；
31、缓冲层；32、有源层；33、第一栅极绝缘层；34、栅极层；35、第二栅极绝缘层；36、介电层；37、阻隔层；38、源漏极层；39、平坦层；
41、第二通孔；
10、显示区；20、摄像区。
 本发明的最佳实施方式
以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。
本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是附图中的方向，本文所使用的方向用语是用来解释和说明本发明，而不是用来限定本发明的保护范围。
在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。此外，为了便于理解和描述，附图所示的每一组件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。
当某些组件，被描述为“在”另一组件“上”时，所述组件可以直接置于所述另一组件上；也可以存在一中间组件，所述组件置于所述中间组件上，且所述中间组件置于另一组件上。当一个组件被描述为“安装至”或“连接至”另一组件时，二者可以理解为直接“安装”或“连接”，或者一个组件通过一中间组件“安装至”或“连接至”另一个组件。
本实施例提供一种显示装置，包括如图1所示的显示面板，所述显示面板包括柔性基板1、第一透光层2、薄膜晶体管3、第二透光层4、阳极层5及影像采集装置6。
所述显示面板被分为显示区10及摄像区20，显示区10用以显示，摄像区2可接收外界可见光，用以实现摄像功能。
显示区10包括第一柔性基板11、薄膜晶体管3及阳极层5。摄像区20包括第二柔性基板12、第一透光层2、第二透光层4及摄像采集装置6。
柔性基板1的材质为聚酰亚胺材料，所述聚酰亚胺材料在可见光范围内的非平均透过率为65%~80%。
在柔性基板1的摄像区处设有一第一通孔13（参见图3），第一通孔13贯穿柔性基板1，第一通孔13用以为后续第一透光层提供通道。
第一透光层2设于第一通孔13内，且填充满第一通孔13，第一透光层2的材质为透明树脂材料，在本实施例中，优选为无色透明聚酰亚胺材料，所述无色透明聚酰亚胺材料的可见光透过率为95%~100%，使得第一透光层2的可见光透过率高于柔性基板1的可见光透过率，可提高摄像区20的可见光透过率。进一步提高显示装置的可见光透过率。
薄膜晶体管3设于柔性基板1的上表面，且薄膜晶体管3设于显示区10内，薄膜晶体管3包括缓冲层31、有源层32、第一栅极绝缘层33、栅极层34、第二栅极绝缘层35、介电层36、阻隔层37、源漏极层38以及平坦层39。
缓冲层31设于柔性基板1的上表面，缓冲层31起到缓冲作用，缓冲层31的材质为二氧化硅SiO 2或者硅的氮化物SiN x，可为单层SiO 2膜层或者二氧化硅SiO 2、硅的氮化物SiN x的多层堆叠，且二氧化硅SiO 2膜层设于顶层。
有源层32设于缓冲层31的上表面，有源层32包括半导体部及导体部，所述导体部设于所述半导体部的外侧，所述半导体部保持半导体特性。有源层32的材质为氧化物半导体，例如铟镓锌氧化物IGZO，厚度为300A~500A。
第一栅极绝缘层33设于有源层32及缓冲层31的上表面，第一栅极绝缘层33可为单层SiO 2膜层或者二氧化硅SiO 2、硅的氮化物SiN x的多层堆叠，且二氧化硅SiO 2膜层设于底层。第一栅极绝缘层33起到绝缘层作用，防止薄膜晶体管3内部发生短路问题。
栅极层34设于第一栅极绝缘层33的上表面，且与有源层31相对设置。栅极层34的材质为金属，如铜Cu或钼Mo。
第二栅极绝缘层35设于第一栅极绝缘层33及栅极层34的上表面，第二栅极绝缘层33可为单层SiO 2膜层或者二氧化硅SiO 2、硅的氮化物SiN x的多层堆叠，且二氧化硅SiO 2膜层设于底层。第二栅极绝缘层35起到绝缘层作用，防止薄膜晶体管3内部发生短路问题。
介电层36设于第二栅极绝缘层35的上表面，介电层36上设有两个以上介电层过孔，所述介电层过孔穿过介电层36，且与有源层32的导体部相对设置，所述介电层过孔用以为后续源漏极层提供通道。
阻隔层37设于介电层36的上表面，起到阻隔绝缘层的作用，防止薄膜晶体管3内部发生短路的问题。
源漏极层38设于所述介电层过孔内，且延伸至阻隔层37的上表面，源漏极层38连接至有源层32的导体部，形成源漏极层38与有源层32的电性连接。源漏极层38的材质为金属。
平坦层39设于源漏极层38及阻隔层37的上表面，平坦层39用以保证薄膜晶体管3的表面平整性，便于后续膜层的制备，避免出现因表面不平造成的膜层脱离的技术问题。
薄膜晶体管3的缓冲层31、第一栅极绝缘层33、第二栅极绝缘层35以及介电层36构成无机膜层，所述无机膜层设于柔性基板1的上表面，所述无机膜层的可见光透过率为85%~95%。
所述无机膜层设有第二通孔41（参见图5），第二通孔41贯穿所述无机膜层，第二通孔41为后续第二透光层提供通道。
第二透光层41设于第二通孔41内，且填充满第二通孔41，第二透光层4的材质为透明树脂材料，在本实施例中，优选为无色透明聚酰亚胺材料，所述无色透明聚酰亚胺材料的可见光透过率为95%~100%，使得第二透光层4的可见光透过率高于所述无机膜层的可见光透过率，可提高摄像区20的可见光透过率。进一步提高显示装置的可见光透过率。
阳极层5设于平坦层39的上表面，且穿过平坦层39，电连接至源漏极层38，为后续像素发光层的发光提供电路支持。
所述显示面板还包括像素定义层、发光层、阴极层等膜层，所述像素定义层、所述发光层、所述阴极层等膜层都设于阳极层5的上方，都属于现有技术，在本实施例中不作具体阐述。
影像采集装置6包括摄像头，所述摄像头的中心轴线与第一透光层2的中心轴线在同一直线上，可见光从摄像区20的上方进入显示面板，穿过各膜层后在所述摄像头处成像，实现屏下摄像功能。
本实施例所述显示装置的技术效果在于，采用可见光透过率高的无色透明聚酰亚胺材料，提高摄像区各膜层的透明度和透光率，增加摄像区入射光的光强，进而改善屏下摄像式电子设备的摄像性能，用以满足用户对屏下摄像的高需求。
如图2所示，本实施例还提供一种显示面板的制备方法，包括步骤S1~S11。
S1 硬质基板提供步骤，提供一硬质基板，所述硬质基板的材质可为玻璃。
S2 柔性基板制备步骤，在所述硬质基板的上表面制备出柔性基板，所述柔性基板的材质为聚酰亚胺材料，所述聚酰亚胺材料在可见光范围内的非平均透过率为65%~80%。
S3第一刻蚀步骤，采用激光技术刻蚀部分柔性基板，形成第一通孔13（参见图3）。第一通孔13贯穿柔性基板1，第一通孔13用以为后续第一透光层提供通道。
S4 第一透光层制备步骤，在所述第一通孔内填充透明树脂材料，在本实施例中，优选为无色透明聚酰亚胺材料，经固化处理后，形成第一透光层。所述无色透明聚酰亚胺材料的可见光透过率可达95%~100%，使得所述第一透光层的可见光透过率高于所述柔性基板的可见光透过率。
S5薄膜晶体管第一制备步骤，在所述柔性基板的上表面制备出部分薄膜晶体管，如图4所示，所述薄膜晶体管第一制备步骤包括S51~S56，形成如图5所示的显示面板结构。
S51 缓冲层制备步骤，在柔性基板1的上表面制备出缓冲层31，缓冲层31起到缓冲作用，缓冲层31的材质为二氧化硅SiO 2或者硅的氮化物SiN x，可为单层SiO 2膜层或者二氧化硅SiO 2、硅的氮化物SiN x的多层堆叠，且二氧化硅SiO 2膜层设于顶层。
S52 有源层制备步骤，在缓冲层31的上表面沉积氧化物半导体材料，例如铟镓锌氧化物IGZO，经导体化处理及图案化处理后才形成有源层32，有源层32的厚度为300A~500A。
S53第一栅极绝缘层制备步骤，在有源层32及缓冲层31的上表面沉积单层SiO 2膜层或者二氧化硅SiO 2、硅的氮化物SiN x的多层堆叠，且二氧化硅SiO 2膜层设于底层，形成第一栅极绝缘层33。第一栅极绝缘层33起到绝缘层作用，防止薄膜晶体管3内部发生短路问题。
S54栅极层制备步骤，在第一栅极绝缘层33的上表面沉积一层金属材料，如铜Cu或钼Mo，经图案化处理后，形成且栅极层34，栅极层34与有源层31相对设置。
S55 第二栅极绝缘层制备步骤，在第一栅极绝缘层33及栅极层34的上表面沉积单层SiO 2膜层或者二氧化硅SiO 2、硅的氮化物SiN x的多层堆叠，且二氧化硅SiO 2膜层设于底层，形成第二栅极绝缘层35，第二栅极绝缘层35起到绝缘层作用，防止薄膜晶体管3内部发生短路问题。
S56 介电层制备步骤，在第二栅极绝缘层35的上表面制备出介电层36，介电层36为无机材料，可起到绝缘层作用，防止薄膜晶体管3内部发生短路问题。
S6 第二刻蚀步骤，在所述薄膜晶体管第一制备步骤中制备所得的缓冲层31、第一栅极绝缘层33、第二栅极绝缘层35、介电层36形成无机膜层（参见图5），所述无机膜层的可见光透过率为85%~95%。在第一透光层2的上方，采用干蚀刻技术刻蚀所述无机膜层，形成第二通孔41，因为所述第一通孔与第二通孔41不在同一工序中完成，所以第二通孔41的孔径与所述第一通孔的孔径的大小不一定相同。第二通孔41为后续第二透光层的制备提供通道。
S7 第二透光层制备步骤，在所述第二通孔内填充透明树脂材料，在本实施例中，优选为无色透明聚酰亚胺材料，经固化处理后，形成第二透光层。所述无色透明聚酰亚胺材料的可见光透过率可达95%~100%，使得所述第二透光层的可见光透过率高于所述无机膜层的可见光透过率。
S8 薄膜晶体管第二制备步骤，在所述介电层及所述第二透光层的上方继续制备薄膜晶体管的相关膜层，如图6所示，所述薄膜晶体管第二制备步骤包括S81~S83。
S81阻隔层制备步骤，在所述介电层的上表面制备出阻隔层，所述阻隔层起到阻隔绝缘层的作用，防止薄膜晶体管内部发生短路的问题。
S82源漏极层制备步骤，在所述阻隔层的上表面制备出源漏极层，所述源漏极层依次穿过所述阻隔层、所述介电层、所述第二栅极绝缘层及所述第一栅极绝缘层，电连接至所述有源层，形成所述源漏极层与所述有源层的电性连接。所述源漏极层的材质为金属。
S83平坦层制备步骤，在所述源漏极层及所述阻隔层的上表面制备出平坦层，所述平坦层用以保证薄膜晶体管的表面平整性，便于后续膜层的制备，避免出现因表面不平造成的膜层脱离的技术问题。
所述薄膜晶体管第一制备步骤及所述薄膜晶体管第二制备步骤制备出薄膜晶体管，所述薄膜晶体管所在区域为显示区，可用以显示。
S9 阳极层制备步骤，在所述平坦层的上表面制备出阳极层，同时，所述阳极层贯穿所述平坦层，电连接至所述源漏极层，实现所述阳极层与所述薄膜晶体管之间的电性连接，为后续像素发光提供电信号。
S10 硬质基板剥离步骤，采用激光剥离技术活机械剥离技术剥离所述硬质基板。
S11 影像采集装置设置步骤，在所述第一透光层的下方安装一影像采集装置，所述影像采集装置包括摄像头，所述摄像头所在区域即为摄像区。光线经由所述第二透光层及所述第一透光层入射至所述摄像头，在所述摄像头处成像，实现屏下摄像功能。由于所述第一透光层及所述第二透光层的材质无色透明聚酰亚胺材料的可见光透过率可达95%~100%，所以大大提高了摄像区的可见光透过率，改善屏下摄像式显示装置的摄像性能，用以满足用户对屏下摄像的高需求。
本实施例所述显示面板的制备方法的技术效果在于，将摄像头上方的膜层改为无色透明聚酰亚胺材料，提高摄像区各膜层的透明度和透光率，增加摄像区入射光的光强，进而改善屏下摄像式电子设备的摄像性能，用以满足用户对屏下摄像的高需求。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

  1. 一种显示面板，被分成显示区及摄像区，其中，
    所述摄像区包括：
    柔性基板；
    第一通孔，贯穿于所述柔性基板；
    第一透光层，设于所述第一通孔内；
    无机膜层，设于所述柔性基板一侧的表面；
    第二通孔，贯穿于所述无机膜层，且与所述第一通孔相对设置；
    第二透光层，设于所述第二通孔内；以及
    影像采集装置，与所述第一透光层相对设置，且设于所述第一透光层远离所述第二透光层一侧的表面。
  2. 如权利要求1所述的显示面板，其中，
    所述第一透光层的材质为透明树脂材料；和/或，
    所述第二透光层的材质为透明树脂材料。
  3. 如权利要求2所述的显示面板，其中，
    所述透明树脂材料包括透明聚酰亚胺材料。
  4. 如权利要求3所述的显示面板，其中，
    所述透明聚酰亚胺材料的可见光透过率为95%~100%。
  5. 如权利要求1所述的显示面板，其中，
    所述影像采集装置包括
    摄像头，其中心轴线与所述第一透光层的中心轴线在同一直线上。
  6. 一种显示面板的制备方法，其包括以下步骤：
    硬质基板提供步骤，提供一硬质基板；
    柔性基板制备步骤，在所述硬质基板的上表面制备出柔性基板；
    第一刻蚀步骤，刻蚀部分柔性基板，形成第一通孔；
    第一透光层制备步骤，在所述第一通孔内制备出第一透光层；
    薄膜晶体管第一制备步骤，在所述柔性基板的上表面制备出部分薄膜晶体管，包括无机膜层；
    第二刻蚀步骤，部分地刻蚀所述无机膜层，形成第二通孔，所述第二通孔与所述第一通孔相对设置；
    第二透光层制备步骤，在所述第二通孔内制备出第二透光层；
    薄膜晶体管第二制备步骤，在所述无机膜层的上表面制备出完整的薄膜晶体管；
    硬质基板剥离步骤，剥离所述硬质基板；以及
    影像采集装置设置步骤，在所述第一透光层的下表面设置影像采集装置。
  7. 如权利要求6所述的显示面板的制备方法，其中，
    在所述第一透光层制备步骤中，
    在所述第一通孔中填充透明树脂材料，固化后，形成第一透光层。
  8. 如权利要求6所述的显示面板的制备方法，其中，
    在所述第二透光层制备步骤中，
    在所述第二通孔中填充透明树脂材料，固化后，形成第二透光层。
  9. 如权利要求6所述的显示面板的制备方法，其中，
    在所述薄膜晶体管第二制备步骤之后，还包括
    阳极层制备步骤，在所述薄膜晶体管的上表面制备出阳极层。
  10. 一种显示装置，包括如权利要求1所述的显示面板。
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