WO2021012407A1 - 光耦合输出材料及其制备方法、电致发光器件 - Google Patents

光耦合输出材料及其制备方法、电致发光器件 Download PDF

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WO2021012407A1
WO2021012407A1 PCT/CN2019/110698 CN2019110698W WO2021012407A1 WO 2021012407 A1 WO2021012407 A1 WO 2021012407A1 CN 2019110698 W CN2019110698 W CN 2019110698W WO 2021012407 A1 WO2021012407 A1 WO 2021012407A1
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layer
light
group
preparation
optical coupling
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PCT/CN2019/110698
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English (en)
French (fr)
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王煦
罗佳佳
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武汉华星光电半导体显示技术有限公司
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Priority to US16/625,322 priority Critical patent/US20210340137A1/en
Publication of WO2021012407A1 publication Critical patent/WO2021012407A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
    • C07D471/04—Ortho-condensed systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the invention relates to the field of display technology, in particular to a light coupling output material, a preparation method thereof, and an electroluminescent device.
  • Organic light-emitting diodes do not require a backlight for active light emission, have high luminous efficiency, large viewing angle, fast response speed, large temperature adaptation range, relatively simple production and processing technology, and low driving voltage , Low energy consumption, lighter and thinner, flexible display and other advantages and huge application prospects have attracted the attention of many researchers.
  • the coupling layer material plays a huge role.
  • the high refractive index (N) material can not only improve the efficiency of the device, but also reduce the thickness of the material to save materials and reduce costs. Purpose, the N value of general CPL materials is low, and the thickness used in the vapor deposition process exceeds 85nm.
  • the present invention designs a long-axis light out-coupling material so that the light out-coupling material can be arranged flat during the evaporation process, so that the light out-coupling material has a very high refractive index value.
  • the present invention provides an optical coupling output material, which has the following general structural formula:
  • the group R1 and the group R2 include one of an alkyl group, an alkoxy group, and an aromatic group.
  • group R1 includes one of the following molecular structural formulas:
  • group R2 includes one of the following molecular structural formulas:
  • the present invention also provides a preparation method for preparing the optical coupling-out material, characterized in that the preparation method includes the following steps: preparing an intermediate, the intermediate having the group R2, naphthalene, and phenanthrene The morpholine structure; the intermediate and the first raw material containing the group R1, the catalyst, and sodium tert-butoxide are added to a three-necked flask, and vented with argon; add dewatered toluene to the reaction vessel, The reaction was carried out at a temperature of 110°C to 130°C for 24 hours, and the first mixed solution was obtained after cooling to room temperature; the first mixed solution was introduced into 180-220ml ice water, and extracted with dichloromethane several times to obtain the extract; The extract is dried with anhydrous sodium sulfate, filtered, and spin-dried, and then column chromatography is performed with 200-300 mesh silica gel and rinsed with an eluent to obtain the optical coupling output material.
  • the step of preparing the intermediate specifically includes the following steps: adding 3-(6-bromonaphthalene-2-yl)-8-iodo-1,10-phenanthroline, phenylboronic acid and a catalyst to the plant
  • argon gas is passed into the Schlenk bottle; deoxygenated toluene, deoxygenated ethanol and deoxygenated water are added to the Schlenk bottle, and the Schlenk bottle is heated under the protection of argon, And react for 24 hours at a temperature of 70°C to 90°C to obtain a second mixed solution; extract the second mixed solution with dichloromethane several times to obtain a first extract; use anhydrous water for the first extract It is dried over sodium sulfate, filtered, and spin-dried, and then column chromatography is performed with 200-300 mesh silica gel and eluted with eluent to obtain the intermediate.
  • the first raw material includes phenoxazine, 3,6-dimethylcarbazole, and 9,10-dihydro-9,9-dimethylacridine; the first raw material and the intermediate
  • the molar ratio of the palladium acetate to the tri-tert-butylphosphine tetrafluoroborate is 5:8 ⁇ 5:6; It is 1:5 ⁇ 1:3.
  • the molar ratio of the 3-(6-bromonaphthalen-2-yl)-8-iodo-1,10-phenanthroline to the phenylboronic acid is 10:9-10:5.
  • the present invention also provides an electroluminescent device, including the light coupling-out material.
  • the light coupling output layer includes the light coupling output material.
  • the light-emitting function layer includes a hole injection layer, which is provided on the first electrode; a hole transport layer, which is provided on one side of the hole injection layer and the first electrode; an electron blocking layer, which is provided On the side of the hole transport layer away from the hole injection layer; a light-emitting layer is provided on the side of the electron blocking layer away from the hole transport layer; the hole blocking layer is provided on the light-emitting layer The side away from the electron blocking layer; the electron transport layer is provided on the side of the hole blocking layer away from the light-emitting layer; the electron injection layer is provided on the side of the electron transport layer away from the hole blocking layer One side.
  • the present invention provides a light coupling-out material, a preparation method thereof, and an electroluminescent device.
  • the long-axis light coupling-out material is designed, specifically by connecting the long-axis naphthalene and phenanthroline as the bridging center. The ends are connected to other groups with a very narrow absorption band for arrangement, so that the light out-coupling material can be arranged flat during the evaporation process, so that the light out-coupling material has a very high refractive index.
  • the light out-coupling material of the target compound was applied to the light out-coupling layer of the electroluminescent device, and achieved very high efficiency. At the same time, the thickness of the light out-coupling layer in the electroluminescent device was reduced from 85nm to 65nm. Effectively save time and capital costs.
  • Fig. 1 is a refractive index spectrum diagram of a light outcoupling material prepared by a preparation method in an embodiment of the present invention.
  • Fig. 2 is a structural diagram of an electroluminescent device in an embodiment of the present invention.
  • First electrode 11 light-emitting functional layer 12; second electrode 13;
  • Electron blocking layer 123 Light emitting layer 124; Hole blocking layer 125;
  • Electron transport layer 126 Electron transport layer 126; electron injection layer 127.
  • the present invention provides an optical coupling output material, which has the following general structural formula:
  • the group R1 and the group R2 include one of an alkyl group, an alkoxy group, and an aromatic group.
  • the group R1 includes one of the following molecular structural formulas:
  • the group R2 includes one of the following molecular structural formulas:
  • optical out-coupling optical material will be further explained below in conjunction with the preparation method of the optical out-coupling material of the present invention.
  • Example 1 of the present invention the preparation method of the optical outcoupling material of the present invention is described in detail by taking the preparation of the target compound one (an optical outcoupling material of the present invention) as an example.
  • the general structure of the target compound is as follows:
  • the preparation method of the optical outcoupling material of embodiment 1 includes the following steps:
  • the intermediate, the first raw material containing the group R1, the catalyst, and sodium tert-butoxide were added to a three-necked flask, and argon was used for pumping.
  • the first raw material is 9,10-dihydro-9,9-dimethylacridine; the molar ratio of the first raw material to the intermediate is 5:8 to 5:6; the catalyst includes acetic acid Palladium and tri-tert-butylphosphine tetrafluoroborate; the molar ratio of the palladium acetate to the tri-tert-butylphosphine tetrafluoroborate is 1:5 to 1:3.
  • Dehydrated toluene is added to the reaction vessel, reacted at a temperature of 110°C to 130°C for 24 hours, and cooled to room temperature to obtain a first mixed solution.
  • the first mixed solution is introduced into 180-220 ml of ice water, and extracted with dichloromethane several times to obtain an extract.
  • the extract was dried with anhydrous sodium sulfate, filtered, and spin-dried, and then column chromatography was performed with 200-300 mesh silica gel and eluted with eluent to obtain the target compound one, which is a kind of light of the present invention. Coupling the output material, its yield is 88%.
  • Example 2 of the present invention the preparation method of the optical outcoupling material of the present invention is described in detail by taking the preparation of target compound two (an optical outcoupling material of the present invention) as an example.
  • the general structure of the target compound is as follows:
  • the preparation method of a light outcoupling material of embodiment 2 includes the following steps:
  • An intermediate is prepared, and the intermediate has a group R2, naphthalene and o-phenanthroline structure; the steps for preparing the intermediate are the same as the intermediate preparation steps in Example 1.
  • the intermediate, the first raw material containing the group R1, the catalyst, and sodium tert-butoxide were added to a three-necked flask, and argon was used for pumping.
  • the first raw material is phenoxazine; the molar ratio of the first raw material to the intermediate is 5:8-5:6; the catalyst includes palladium acetate and tri-tert-butylphosphine tetrafluoroborate; The molar ratio of the palladium acetate to the tri-tert-butylphosphine tetrafluoroborate is 1:5 to 1:3.
  • Dehydrated toluene is added to the reaction vessel, reacted at a temperature of 110°C to 130°C for 24 hours, and cooled to room temperature to obtain a first mixed solution.
  • the first mixed solution is introduced into 180-220 ml of ice water, and extracted with dichloromethane several times to obtain an extract.
  • the extract is dried with anhydrous sodium sulfate, filtered, and spin-dried, and then column chromatography is performed with 200-300 mesh silica gel and eluted with eluent to obtain the target compound two, which is a kind of light of the present invention. Coupling the output material, its yield is 81%.
  • Example 3 of the present invention the preparation method of the optical outcoupling material of the present invention is described in detail by taking the preparation of target compound three (an optical outcoupling material of the present invention) as an example.
  • the general structure of the target compound is as follows:
  • the preparation method of a light outcoupling material of embodiment 3 includes the following steps:
  • An intermediate is prepared, and the intermediate has a group R2, naphthalene and o-phenanthroline structure; the steps for preparing the intermediate are the same as the intermediate preparation steps in Example 1.
  • the intermediate, the first raw material containing the group R1, the catalyst, and sodium tert-butoxide were added to a three-necked flask, and argon was used for pumping.
  • the first raw material is 3,6-dimethylcarbazole; the molar ratio of the first raw material to the intermediate is 5:8-5:6; the catalyst includes palladium acetate and tri-tert-butyl phosphine Tetrafluoroborate; the molar ratio of the palladium acetate to the tri-tert-butylphosphine tetrafluoroborate is 1:5 to 1:3.
  • Dehydrated toluene is added to the reaction vessel, reacted at a temperature of 110°C to 130°C for 24 hours, and cooled to room temperature to obtain a first mixed solution.
  • the first mixed solution is introduced into 180-220 ml of ice water, and extracted with dichloromethane several times to obtain an extract.
  • the extract is dried with anhydrous sodium sulfate, filtered, and spin-dried, and then column chromatography is performed with 200-300 mesh silica gel and eluted with eluent to obtain the target compound three, which is a kind of light of the present invention.
  • the output of the coupling material is 75%.
  • the optical outcoupling material By preparing the optical outcoupling material by the preparation method provided in the embodiments of the present invention, the optical outcoupling material can be effectively synthesized, and the synthesis efficiency can be improved.
  • the optical outcoupling material obtained by the preparation method of this embodiment is subjected to photophysical data detection.
  • the wavelength refractive index diagram shown in Figure 1 is obtained.
  • the refractive index of the target compound 3 of the present invention is greater than the refractive index of the target compound 2, and the refractive index of the target compound 2 is greater than the refractive index of the target compound 1.
  • the refractive index of target compound 1, target compound 2 and target compound 3 decreases as the wavelength increases.
  • the optical outcoupling material prepared by the present invention can obtain a high refractive index optical outcoupling material by controlling the wavelength.
  • the present invention also provides an electroluminescent device 10, which includes the light coupling-out material.
  • the electroluminescent device includes a first electrode 11, a light-emitting functional layer 12, a second electrode 13 and a light coupling-out layer 14.
  • the first electrode 11 is an anode; the light-emitting function layer 12 is disposed on the first electrode 11; the second electrode 13 is disposed on the light-emitting function layer 12, and the second electrode 13 is a cathode;
  • the light outcoupling layer 14 is disposed on the second electrode 13, and the material used for the light outcoupling layer 14 includes the light outcoupling material.
  • the light-emitting function layer 12 includes a hole injection layer 121, a hole transport layer 122, an electron blocking layer 123, a light emitting layer 124, a hole blocking layer 125, an electron transport layer 126, and an electron injection layer 127.
  • the hole injection layer 121 is provided on the first electrode 11; the hole transport layer 122 is provided on the hole injection layer 121 on one side of the first electrode 11; the electron blocking layer 123 is provided On the side of the hole transport layer 122 away from the hole injection layer 121; the light-emitting layer 124 is provided on the side of the electron blocking layer 123 away from the hole transport layer 122; the hole blocking The layer 125 is disposed on the side of the light-emitting layer 124 away from the electron blocking layer 123; the electron transport layer 126 is disposed on the side of the hole blocking layer 125 away from the light-emitting layer 124; the electron injection layer 127 is provided on the side of the electron transport layer 126 away from the hole blocking layer 123.
  • Table 1 is a performance data table of the electroluminescent device 10 using target compound 1, target compound 2 or target compound 3.
  • the light outcoupling material is used in the light outcoupling layer 14 to effectively manufacture the electroluminescent device 10 and improve the luminous efficiency of the electroluminescent device.
  • the thickness of the light outcoupling layer 14 is reduced from 85 nm to 65 nm, which saves time and capital costs.

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Abstract

本发明提供光耦合输出材料及其制备方法、电致发光器件，通过设计长轴状的光耦合输出材料，具体地通过将长轴的萘与邻菲啰啉连接作为桥连中心，并在两端连接其他吸收波段很窄的基团进行排列，使得光耦合输出材料在蒸镀过程中能够平躺的排列，这样光耦合输出材料具有非常高的折射率。最后将目标化合物的光耦合输出材料应用于电致发光器件的光耦合输出层中，并取得了非常高的效率，与此同时电致发光器件中光耦合输出层的厚度从85nm减少到65nm，有效地节约了时间和资金成本。

Description

光耦合输出材料及其制备方法、电致发光器件 技术领域
本发明涉及显示技术领域，具体为一种光耦合输出材料及其制备方法、电致发光器件。
背景技术
有机电致发光二极管(organic light-emitting diodes，OLEDs)以其主动发光不需要背光源、发光效率高、可视角度大、响应速度快、温度适应范围大、生产加工工艺相对简单、驱动电压低，能耗小，更轻更薄，柔性显示等优点以及巨大的应用前景，吸引了众多研究者的关注。
技术问题
对于目前使用的顶发射器件结构，其微腔效应能够极大地提高器件效率，窄化光谱，拓宽色域。在器件结构中，光耦合输出层材料(Coupling Layer，CPL)所发挥的作用巨大，高折射率(N)的材料不仅能够提高器件效率，同时能够减薄材料的厚度，达到节约材料降低成本的目的，一般CPL材料的N值较低，在蒸镀制程中使用的厚度超过85nm。
技术解决方案
为解决上述技术问题：本发明通过设计长轴状的光耦合输出材料，使得光耦合输出材料在蒸镀过程中能够平躺的排列，这样光耦合输出材料具有非常高的折射率值。
解决上述问题的技术方案是：本发明提供一种光耦合输 出材料，具有如下结构通式：
Figure PCTCN2019110698-appb-000001
所述结构通式中，基团R1以及基团R2包括烷基、烷氧基、芳香基中的一种。
进一步地，所述基团R1包括如下分子结构式的一种：
Figure PCTCN2019110698-appb-000002
进一步地，所述基团R2包括如下分子结构式的一种：
Figure PCTCN2019110698-appb-000003
Figure PCTCN2019110698-appb-000004
本发明还提供一种制备方法，用来制作所述的光耦合输出材料，其特征在于，所述制备方法包括如下步骤：制备中间体，所述中间体具有基团R2、萘以及邻菲啰啉结构；将所述中间体以及含有基团R1的第一原料、催化剂、叔丁醇钠加入至三口烧瓶中，并用氩气进行抽换气；加入除水甲苯至所述反应容器中，在温度为110℃～130℃条件下反应24h，冷却至室温后得到第一混合溶液；将所述第一混合溶液导入180～220ml冰水中，并使用二氯甲烷萃取多次得到萃取液；将所述萃取液用无水硫酸钠干燥，过滤，旋干，之后用200～300目的硅胶进行柱层析，并用淋洗液淋洗，得到所述光耦输出材料。
进一步地，在制备所述中间体步骤中，具体包括如下步骤：将3-(6-溴萘-2-基)-8-碘-1,10-菲咯啉、苯硼酸以及催化剂加入到施兰克瓶中，向所述施兰克瓶中通入氩气；加入除氧甲苯、除氧乙醇以及除氧水至施兰克瓶中，在氩气保护下加热所述施兰克瓶，并在温度为70℃～90℃条件下反应24h，得到第二混合溶液；将所述第二混合溶液用二氯甲烷萃取多次得到第一萃取液；将所述第一萃取液用无水硫酸钠干燥，过滤，旋干，之后用200～300目的硅胶进行柱层析，并用淋洗液淋洗，得到所述中间体。
进一步地，所述第一原料包括吩噁嗪、3,6-二甲基咔唑 以及9,10-二氢-9,9-二甲基吖啶；所述第一原料与所述中间体的摩尔比为5:8～5:6；所述催化剂包括醋酸钯和三叔丁基膦四氟硼酸盐；所述醋酸钯与所述三叔丁基膦四氟硼酸盐的摩尔比为1:5～1:3。
进一步地，所述3-(6-溴萘-2-基)-8-碘-1,10-菲咯啉与所述苯硼酸的摩尔比为10:9～10:5。
本发明还提供一种电致发光器件，包括所述的光耦合输出材料。
进一步地，包括第一电极；发光功能层，设于所述第一电极上；第二电极，设于所述发光功能层上；光耦合输出层，设于所述第二电极上，所述光耦合输出层所用材料包括所述光耦输出材料。
进一步地，所述发光功能层包括空穴注入层，设于所述第一电极上；空穴传输层，设于所述空穴注入层所述第一电极的一侧；电子阻挡层，设于所述空穴传输层远离所述空穴注入层的一侧；发光层，设于所述电子阻挡层远离所述空穴传输层的一侧；空穴阻挡层，设于所述发光层远离所述电子阻挡层的一侧；电子传输层，设于所述空穴阻挡层远离所述发光层的一侧；电子注入层，设于所述电子传输层远离所述空穴阻挡层的一侧。
有益效果
本发明提供光耦合输出材料及其制备方法、电致发光器件，通过设计长轴状的光耦合输出材料，具体地通过将 长轴的萘与邻菲啰啉连接作为桥连中心，并在两端连接其他吸收波段很窄的基团进行排列，使得光耦合输出材料在蒸镀过程中能够平躺的排列，这样光耦合输出材料具有非常高的折射率。最后将目标化合物的光耦合输出材料应用于电致发光器件的光耦合输出层中，并取得了非常高的效率，与此同时电致发光器件中光耦合输出层的厚度从85nm减少到65nm，有效地节约了时间和资金成本。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例中的制备方法制得的光耦合输出材料的折射率光谱图。
图2是本发明实施例中电致发光器件结构图。
附图标记：
10电致发光器件；
第一电极11；发光功能层12；第二电极13；
光耦合输出层14；空穴注入层121；空穴传输层122；
电子阻挡层123；发光层124；空穴阻挡层125；
电子传输层126；电子注入层127。
本发明实施方式
以下是各实施例的说明是参考附加的图式，用以例示本发明可以用实施的特定实施例。本发明所提到的方向用语，例如上、下、前、后、左、右、内、外、侧等，仅是参考附图式的方向。本发明提到的元件名称，例如第一、第二等，仅是区分不同的元部件，可以更好的表达。在图中，结构相似的单元以相同标号表示。
本文将参照附图来详细描述本发明的实施例。本发明可以表现为许多不同形式，本发明不应仅被解释为本文阐述的具体实施例。本发明提供实施例是为了解释本发明的实际应用，从而使本领域其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改方案。
本发明提供一种光耦合输出材料，具有如下结构通式：
Figure PCTCN2019110698-appb-000005
所述结构通式中，基团R1以及基团R2包括烷基、烷氧基、芳香基中的一种。
所述基团R1包括如下分子结构式的一种：
Figure PCTCN2019110698-appb-000006
Figure PCTCN2019110698-appb-000007
所述基团R2包括如下分子结构式的一种：
Figure PCTCN2019110698-appb-000008
为了更加清楚的解释本发明，下面结合本发明的光耦合输出材料的制备方法对所述光耦合输出光材料进行进一步解释。
在本发明实施例中1，以制备目标化合物一(本发明的一种光耦合输出材料)为例，详细说明本发明的光耦合输出材料制备方法。其中目标化合物的结构通式如下：
Figure PCTCN2019110698-appb-000009
实施例1的所述光耦合输出材料的制备方法包括以下步骤：
制备中间体，所述中间体具有基团R2、萘以及邻菲啰啉结构；在制备所述中间体步骤中，具体包括如下步骤：将3-(6-溴萘-2-基)-8-碘-1,10-菲咯啉、苯硼酸以及催化剂加入到施兰克瓶中，向所述施兰克瓶中通入氩气；加入除氧甲苯、除氧乙醇以及除氧水至施兰克瓶中，在氩气保护下加热所述施兰克瓶，并在温度为70℃～90℃条件下反应24h，得到第二混合溶液；将所述第二混合溶液用二氯甲烷萃取多次得到第一萃取液；将所述第一萃取液用无水硫酸钠干燥，过滤，旋干，之后用200～300目的硅胶进行柱层析，并用淋洗液淋洗，得到所述中间体。
所述中间体的结构通式如下：
Figure PCTCN2019110698-appb-000010
将所述中间体以及含有基团R1的第一原料、催化剂、叔丁醇钠加入至三口烧瓶中，并用氩气进行抽换气。所述第一原料为9,10-二氢-9,9-二甲基吖啶；所述第一原料与所述中间体的摩尔比为5:8～5:6；所述催化剂包括醋酸钯 和三叔丁基膦四氟硼酸盐；所述醋酸钯与所述三叔丁基膦四氟硼酸盐的摩尔比为1:5～1:3。
加入除水甲苯至所述反应容器中，在温度为110℃～130℃条件下反应24h，冷却至室温后得到第一混合溶液。
将所述第一混合溶液导入180～220ml冰水中，并使用二氯甲烷萃取多次得到萃取液。
将所述萃取液用无水硫酸钠干燥，过滤，旋干，之后用200～300目的硅胶进行柱层析，并用淋洗液淋洗，得到所述目标化合物一，即本发明的一种光耦合输出材料，其产率为88％。
在本发明实施例2中，以制备目标化合物二(本发明的一种光耦合输出材料)为例，详细说明本发明的光耦合输出材料制备方法。其中目标化合物的结构通式如下：
Figure PCTCN2019110698-appb-000011
实施例2的一种光耦合输出材料的制备方法包括以下步骤：
制备中间体，所述中间体具有基团R2、萘以及邻菲啰啉结构；在制备所述中间体步骤与实施例1的中间体制备步骤相同。
将所述中间体以及含有基团R1的第一原料、催化剂、叔丁醇钠加入至三口烧瓶中，并用氩气进行抽换气。所述第一原料为吩噁嗪；所述第一原料与所述中间体的摩尔比为5:8～5:6；所述催化剂包括醋酸钯和三叔丁基膦四氟硼酸盐；所述醋酸钯与所述三叔丁基膦四氟硼酸盐的摩尔比为1:5～1:3。
加入除水甲苯至所述反应容器中，在温度为110℃～130℃条件下反应24h，冷却至室温后得到第一混合溶液。
将所述第一混合溶液导入180～220ml冰水中，并使用二氯甲烷萃取多次得到萃取液。
将所述萃取液用无水硫酸钠干燥，过滤，旋干，之后用200～300目的硅胶进行柱层析，并用淋洗液淋洗，得到所述目标化合物二，即本发明的一种光耦合输出材料，其产率为81％。
在本发明实施例3中，以制备目标化合物三(本发明的一种光耦合输出材料)为例，详细说明本发明的光耦合输出材料制备方法。其中目标化合物的结构通式如下：
Figure PCTCN2019110698-appb-000012
实施例3的一种光耦合输出材料的制备方法包括以 下步骤：
制备中间体，所述中间体具有基团R2、萘以及邻菲啰啉结构；在制备所述中间体步骤与实施例1的中间体制备步骤相同。
将所述中间体以及含有基团R1的第一原料、催化剂、叔丁醇钠加入至三口烧瓶中，并用氩气进行抽换气。所述第一原料为3,6-二甲基咔唑；所述第一原料与所述中间体的摩尔比为5:8～5:6；所述催化剂包括醋酸钯和三叔丁基膦四氟硼酸盐；所述醋酸钯与所述三叔丁基膦四氟硼酸盐的摩尔比为1:5～1:3。
加入除水甲苯至所述反应容器中，在温度为110℃～130℃条件下反应24h，冷却至室温后得到第一混合溶液。
将所述第一混合溶液导入180～220ml冰水中，并使用二氯甲烷萃取多次得到萃取液。
将所述萃取液用无水硫酸钠干燥，过滤，旋干，之后用200～300目的硅胶进行柱层析，并用淋洗液淋洗，得到所述目标化合物三，即本发明的一种光耦合输出材料，其产率为75％。
通过本发明提供实施例的制备方法制备光耦合输出材料，能够有效合成光耦合输出材料，同时能够提高合成效率。
为了验证本发明的光耦合输出材料的特性是否满足电致发光器件的要求，因此本实施例中将通过本实施例的制备方法得到的光耦合输出材料进行光物理数据检测。得到如图1所示的波长折射率图。
由图1可知，在波长400nm的时候，本发明的目标化合物三的折射率大于目标化合物二的折射率，而目标化合物二的折射率大于目标化合物一的折射率。目标化合物一、目标化合物二与目标化合物三的折射率随着波长的增加而递减。
因此本发明制备得到的光耦合输出材料可以通过控制波长得到高折射率的光耦合输出材料。
如图2所示，本发明还提供了一种电致发光器件10，包括所述的光耦合输出材料。
具体的，所述电致发光器件包括第一电极11、发光功能层12、第二电极13以及光耦合输出层14。
所述第一电极11为阳极；所述发光功能层12设于所述第一电极11上；所述第二电极13设于所述发光功能层12上，所述第二电极13为阴极；所述光耦合输出层14设于所述第二电极13上，所述光耦合输出层14所用材料包括所述光耦输出材料。
所述发光功能层12包括空穴注入层121、空穴传输层122、电子阻挡层123、发光层124、空穴阻挡层125、 电子传输层126以及电子注入层127。
所述空穴注入层121设于所述第一电极11上；所述空穴传输层122设于所述空穴注入层121所述第一电极11的一侧；所述电子阻挡层123设于所述空穴传输层122远离所述空穴注入层121的一侧；所述发光层124设于所述电子阻挡层123远离所述空穴传输层122的一侧；所述空穴阻挡层125设于所述发光层124远离所述电子阻挡层123的一侧；所述电子传输层126设于所述空穴阻挡层125远离所述发光层124的一侧；所述电子注入层127设于所述电子传输层126远离所述空穴阻挡层123的一侧。
表1为采用目标化合物一、采用目标化合物二或目标化合物三的电致发光器件10的性能数据表。
Figure PCTCN2019110698-appb-000013
本发明的电致发光器件10，在光耦合输出层14采用所述的光耦合输出材料，有效的制作出电致发光器件10，提高了电致发光器件的发光效率。并且光耦合输出层14的厚度从85nm减少到65nm，这节约了时间和资金成本。
本发明的技术范围不仅仅局限于所述说明中的内容，本领域技术人员可以在不脱离本发明技术思想的前提下，对所述实施例进行多种变形和修改，而这些变形和修改均 应当属于本发明的范围内。

Claims (10)

  1. 一种光耦合输出材料，其中，具有如下结构通式：
    Figure PCTCN2019110698-appb-100001
    所述结构通式中，基团R1以及基团R2包括烷基、烷氧基、芳香基中的一种。
  2. 根据权利要求1所述的光耦合输出材料，其中，所述基团R1包括如下分子结构式的一种：
    Figure PCTCN2019110698-appb-100002
  3. 根据权利要求1所述的光耦合输出材料，其中，所述基团R2包括如下分子结构式的一种：
    Figure PCTCN2019110698-appb-100003
  4. 一种制备方法，用来制作如权利要求1所述的光耦合输出材料，其中，所述制备方法包括如下步骤：
    制备中间体，所述中间体具有基团R2、萘以及邻菲啰啉结构；
    将所述中间体以及含有基团R1的第一原料、催化剂、叔丁醇钠加入至三口烧瓶中，并用氩气进行抽换气；
    加入除水甲苯至所述反应容器中，在温度为110℃～130℃条件下反应24h，冷却至室温后得到第一混合溶液；
    将所述第一混合溶液导入180～220ml冰水中，并使用二氯甲烷萃取多次得到萃取液；
    将所述萃取液用无水硫酸钠干燥，过滤，旋干，之后用200～300目的硅胶进行柱层析，并用淋洗液淋洗，得到所述光耦输出材料。
  5. 根据权利要求4所述的制备方法，其中
    在制备所述中间体步骤中，具体包括如下步骤：
    将3-(6-溴萘-2-基)-8-碘-1,10-菲咯啉、苯硼酸以及催化剂加入到施兰克瓶中，向所述施兰克瓶中通入氩气；
    加入除氧甲苯、除氧乙醇以及除氧水至施兰克瓶中，在氩气保护下加热所述施兰克瓶，并在温度为70℃～90℃条件下反应24h，得 到第二混合溶液；
    将所述第二混合溶液用二氯甲烷萃取多次得到第一萃取液；
    将所述第一萃取液用无水硫酸钠干燥，过滤，旋干，之后用200～300目的硅胶进行柱层析，并用淋洗液淋洗，得到所述中间体。
  6. 根据权利要求4所述的制备方法，其中
    所述第一原料包括吩噁嗪、9,10-二氢-9,9-二甲基吖啶、3,6-二甲基咔唑；
    所述第一原料与所述中间体的摩尔比为5:8～5:6；
    所述催化剂包括醋酸钯和三叔丁基膦四氟硼酸盐；
    所述醋酸钯与所述三叔丁基膦四氟硼酸盐的摩尔比为1:5～1:3。
  7. 根据权利要求4所述的制备方法，其中
    所述3-(6-溴萘-2-基)-8-碘-1,10-菲咯啉与所述苯硼酸的摩尔比为10:9～10:5。
  8. 一种电致发光器件，其中包括如权利要求1所述的光耦合输出材料。
  9. 根据权利要求8所述的电致发光器件，其中，包括：
    第一电极；
    发光功能层，设于所述第一电极上；
    第二电极，设于所述发光功能层上；
    光耦合输出层，设于所述第二电极上，所述光耦合输出层所用材料包括所述光耦输出材料。
  10. 根据权利要求9所述的电致发光器件，其中，所述发光功能 层包括
    空穴注入层，设于所述第一电极上；
    空穴传输层，设于所述空穴注入层所述第一电极的一侧；
    电子阻挡层，设于所述空穴传输层远离所述空穴注入层的一侧；
    发光层，设于所述电子阻挡层远离所述空穴传输层的一侧；
    空穴阻挡层，设于所述发光层远离所述电子阻挡层的一侧；
    电子传输层，设于所述空穴阻挡层远离所述发光层的一侧；
    电子注入层，设于所述电子传输层远离所述空穴阻挡层的一侧。
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