WO2021012374A1 - 一种显示面板及其制作方法 - Google Patents

一种显示面板及其制作方法 Download PDF

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Publication number
WO2021012374A1
WO2021012374A1 PCT/CN2019/106924 CN2019106924W WO2021012374A1 WO 2021012374 A1 WO2021012374 A1 WO 2021012374A1 CN 2019106924 W CN2019106924 W CN 2019106924W WO 2021012374 A1 WO2021012374 A1 WO 2021012374A1
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Prior art keywords
layer
display panel
electrode plate
area
pixel definition
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PCT/CN2019/106924
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English (en)
French (fr)
Inventor
韩佰祥
曹昆
Original Assignee
深圳市华星光电半导体显示技术有限公司
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Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to US16/615,474 priority Critical patent/US11985859B2/en
Publication of WO2021012374A1 publication Critical patent/WO2021012374A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present invention relates to the field of display technology, in particular to a display panel and a manufacturing method thereof.
  • Existing display panels usually include a light-transmitting area and a storage area.
  • the light-transmitting area is used for arranging an organic light emitting unit, the organic light emitting unit includes an organic light emitting layer, the storage area is used for setting a storage capacitor, and the storage capacitor is used for storing charges.
  • the object of the present invention is to provide a display panel and a manufacturing method thereof, which can reduce the occupied area of pixels and improve the utilization rate of the display panel.
  • the present invention provides a display panel, including:
  • the light-transmitting area is used to set the organic light-emitting unit
  • the storage area is used to set a storage capacitor.
  • the light-transmitting area corresponds to the position of the storage area.
  • the storage capacitor includes a first electrode plate and a second electrode plate.
  • the material of the first electrode plate and the second electrode plate The materials of the diodes are all transparent materials.
  • the present invention also provides a manufacturing method of the display panel, including:
  • a flat layer is formed on the active layer and the first electrode plate, and an opening area is provided on the flat layer; the position of the opening area corresponds to the position of the first electrode plate;
  • the pixel definition layer is provided with a pixel definition area, and the pixel definition area corresponds to the position of the opening area;
  • a cathode is formed on the organic light-emitting layer.
  • the display panel and the manufacturing method thereof of the present invention include a light-transmitting area for arranging an organic light-emitting unit; a storage area for arranging a storage capacitor.
  • the positions of the light-transmitting area and the storage area correspond to each other, and the storage capacitor includes a first plate And the second electrode plate, and the material of the first electrode plate and the material of the second electrode plate are both transparent materials, so the aperture ratio will not be reduced, and the position of the transparent area and the storage area can be reduced This increases the area occupied by the pixels, thereby increasing the utilization rate of the display panel.
  • FIG. 1 is a schematic diagram of the structure of an existing display panel
  • FIG. 2 is a schematic diagram of the first and second steps of the manufacturing method of the display panel of the present invention.
  • FIG. 3 is a schematic diagram of the third and fourth steps of the manufacturing method of the display panel of the present invention.
  • FIG. 4 is a schematic structural diagram of the fifth step of the manufacturing method of the display panel of the present invention.
  • FIG. 5 is a schematic diagram of the sixth and seventh steps of the manufacturing method of the display panel of the present invention.
  • the existing display panel includes a light-transmitting area 101 and a storage area 102.
  • the cross-sectional structure of the existing display panel includes a base substrate 11, a first metal layer 12, an active layer 13, a second metal layer 14, a flat layer 15, an anode layer 16, a pixel definition layer 17, an organic light emitting layer 18, and a cathode. 19.
  • the first metal layer 12 includes a gate 121 and a first electrode plate 122
  • the second metal layer 14 includes a source electrode, a drain electrode, and a second electrode plate 142.
  • the pixel defining layer 17 is provided with a pixel defining area
  • the organic light emitting layer 18 is located in the pixel defining area
  • the cathode 19 is located on the organic light emitting layer 18.
  • FIG. 2 is a schematic structural diagram of the first and second steps of the manufacturing method of the display panel of the present invention.
  • the manufacturing method of the display panel of the present invention includes:
  • a transparent film 22 is fabricated on a base substrate 11, and the transparent film 22 is patterned to obtain an active layer 221 and an electrode portion.
  • the method may further include: forming a first metal layer on the base substrate 11, and patterning the first metal layer to form the gate 21.
  • An active layer 22 is formed on the gate 21.
  • the material of the active layer 221 is transparent metal oxide, and the material of the active layer 221 is indium gallium zinc oxide.
  • a first electrode plate 222 is obtained by conducting a conductive process on the electrode portion.
  • the method may further include: forming a second metal layer 23 on the active layer 221, and patterning the second metal layer to form a source electrode and a drain electrode.
  • a flat layer 24 is formed on the second metal layer, and an opening area 241 is provided on the flat layer 24; the position of the opening area 241 and the position of the first electrode plate 222 correspond.
  • an anode layer 25 is formed on the flat layer 24 and in the opening area 241 so that the anode layer 25 corresponding to the position of the opening area 241 forms a second electrode plate 251.
  • the flat layer 24 is further provided with a via hole, and the anode layer 25 is connected to the drain electrode through the via hole.
  • a pixel definition layer is formed on the anode layer, and a pixel definition area is provided on the pixel definition layer;
  • a pixel defining layer 26 is formed on the anode layer 25, and a pixel defining area 261 is provided on the pixel defining layer 26, and the pixel defining area 261 corresponds to the position of the opening area 241 .
  • the pixel definition layer 26 is not covered at the bottom of the opening area 241.
  • an organic light emitting layer 27 is formed in the pixel defining area 261.
  • a cathode 28 is formed on the organic light-emitting layer 27.
  • the present invention also provides a display panel, which includes a light-transmitting area 201 and a storage area 202.
  • the light-transmitting area 201 is used for arranging an organic light-emitting unit; the cross-sectional structure of the organic light-emitting unit includes an anode and an organic light-emitting layer 27. And the cathode.
  • the storage area 202 is used to set a storage capacitor.
  • the light-transmitting area 201 corresponds to the position of the storage area 201.
  • the storage capacitor includes a first plate 222 and a second plate 251.
  • the material and the material of the second electrode plate 251 are both transparent materials.
  • the cross-sectional structure of the display panel further includes a base substrate 11, a first metal layer, an active layer 221, a second metal layer 23, a flat layer 24, an anode layer 25, a pixel definition layer 26, and organic The light-emitting layer 27 and the cathode 28.
  • the first metal layer is provided on the base substrate 11, and the first metal layer includes the gate 21.
  • the edge layer 221 is located on the first metal layer.
  • the first electrode plate 222 and the active layer 221 are located on the same layer. Of course, the first plate can be located on other layers.
  • the initial material of the first electrode plate 222 is the same as the material of the active layer 221, and the first electrode plate 222 is made of the material of the active layer 221. Conducted processing.
  • the material of the active layer 221 is transparent metal oxide.
  • the material of the active layer 221 is indium gallium zinc oxide.
  • the first electrode plate 222 and the active layer 221 can also be manufactured separately.
  • the second metal layer 23 is disposed on the active layer 221, and the second metal layer 23 includes a source electrode and a drain electrode.
  • the flat layer 24 is located on the second metal layer 23.
  • the flat layer 24 is also provided with a via hole (not shown in the figure) and an opening area 241, and the position of the opening area 241 corresponds to the position of the first electrode plate 222.
  • the second electrode plate 251 and the anode layer 25 are located in the same layer.
  • the second electrode plate 251 can also be located on other layers.
  • the anode layer 25 is located on the flat layer 24 and in the opening area 241, and the second electrode plate 251 is an anode layer corresponding to the position of the opening area 241. That is, the anode layer 25 corresponding to the position of the opening area 241 forms the second electrode plate 251.
  • the anode layer 25 may be connected to the drain electrode through the via hole.
  • the pixel definition layer 26 is located on the anode layer 25, the pixel definition layer 26 is provided with a pixel definition area 261, and the pixel definition area 261 corresponds to the position of the opening area 241.
  • the organic light emitting layer 27 is located in the pixel defining area 261.
  • the cathode 28 is located on the organic light-emitting layer 27.
  • the display panel may also include an encapsulation layer, which is located on the cathode 28.
  • the manufacturing method of the display panel of the present invention can be manufactured by the above-mentioned method, of course, it can also be obtained by other manufacturing methods.
  • the areas of the light-transmitting area and the storage area are corresponding, and the material of the first electrode plate and the material of the second electrode plate are both transparent materials, the area occupied by the pixels is reduced without reducing the aperture ratio, thereby increasing Display panel utilization.
  • the display panel and the manufacturing method thereof of the present invention include a light-transmitting area for arranging an organic light-emitting unit; a storage area for arranging a storage capacitor.
  • the positions of the light-transmitting area and the storage area correspond to each other, and the storage capacitor includes a first plate And the second electrode plate, and the material of the first electrode plate and the material of the second electrode plate are both transparent materials, so the aperture ratio will not be reduced, and the position of the transparent area and the storage area can be reduced This increases the area occupied by the pixels, thereby increasing the utilization rate of the display panel.

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Abstract

一种显示面板及其制作方法，显示面板包括：透光区域（201），用于设置有机发光单元；存储区域（202），用于设置存储电容，透光区域（201）和存储区域（202）的位置对应，存储电容包括第一极板（222）和第二极板（251），第一极板（222）的材料和第二极板（251）的材料均为透明材料。

Description

一种显示面板及其制作方法 技术领域
本发明涉及显示技术领域，特别是涉及一种显示面板及其制作方法。
 背景技术
现有的显示面板通常包括透光区域和存储区域，透光区域用于设置有机发光单元，有机发光单元包括有机发光层，存储区域用于设置存储电容，存储电容用于存储电荷。
 技术问题
然而，由于现有的存储电容是通过栅极和源/漏极金属层制作得到的，因此为了不影响开口率，需要避开透光区域，从而导致像素的占用面积增大，降低了面板的利用率。
因此，有必要提供一种显示面板及其制作方法，以解决现有技术所存在的问题。
 技术解决方案
本发明的目的在于提供一种显示面板及其制作方法，能够减小像素的占用面积和提高显示面板的利用率。
为解决上述技术问题，本发明提供一种显示面板，包括：
透光区域，用于设置有机发光单元；
存储区域，用于设置存储电容，所述透光区域和所述存储区域的位置对应，所述存储电容包括第一极板和第二极板，所述第一极板的材料和所述第二极板的材料均为透明材料。
本发明还提供一种显示面板的制作方法，包括:
在衬底基板上制作透明薄膜，对所述透明薄膜进行图案化处理得到有源层和电极部；
对所述电极部进行导体化处理，得到第一极板；
在所述有源层及所述第一极板上形成平坦层，所述平坦层上设置有开口区；所述开口区的位置与所述第一极板的位置对应；
在所述平坦层上及所述开口区内形成阳极层，以使与所述开口区的位置对应的阳极层形成第二极板；
在所述阳极层上形成像素定义层，所述像素定义层上设置有像素定义区，所述像素定义区与所述开口区的位置对应；
在所述像素定义区内制作有机发光层；
在所述有机发光层上制作阴极。
 有益效果
本发明的显示面板及其制作方法，包括透光区域，用于设置有机发光单元；存储区域，用于设置存储电容，透光区域和存储区域的位置对应，所述存储电容包括第一极板和第二极板，且所述第一极板的材料和所述第二极板的材料均为透明材料，因此不会降低开口率，且透光区域和存储区域的位置对应，可以减小了像素的占用面积，进而提高了显示面板的利用率。
 附图说明
图1为现有显示面板的结构示意图；
图2为本发明显示面板的制作方法的第一步和第二步的结构示意图。
图3为本发明显示面板的制作方法的第三步和第四步的结构示意图。
图4为本发明显示面板的制作方法的第五步的结构示意图。
图5为本发明显示面板的制作方法的第六步和第七步的结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
如图1所示，现有的显示面板包括透光区域101和存储区域102。现有的显示面板的截面结构包括衬底基板11、第一金属层12、有源层13、第二金属层14、平坦层15、阳极层16、像素定义层17、有机发光层18以及阴极19。其中第一金属层12包括栅极121和第一极板122，第二金属层14包括源极、漏极和第二极板142。像素定义层17上设置有像素定义区，有机发光层18位于像素定义区内，阴极19位于有机发光层18上。
请参照图2至5，图2为本发明显示面板的制作方法的第一步和第二步的结构示意图。
在一实施方式中，本发明的显示面板的制作方法包括：
S101、在衬底基板上制作透明薄膜，对所述透明薄膜进行图案化处理得到有源层和电极部；
如图2所示，例如，在衬底基板11上制作透明薄膜22，对所述透明薄膜22进行图案化处理得到有源层221和电极部。所述方法还可包括：在衬底基板11上形成第一金属层，对第一金属层进行图案化处理形成栅极21。在栅极21上制作有源层22。
其中所述有源层221的材料为透明金属氧化物，其中所述有源层221的材料为铟镓锌氧化物。
S102、对所述电极部进行导体化处理得到第一极板；
如图2所示，例如，对所述电极部进行导体化处理得到第一极板222。
所述方法还可包括：在有源层221上形成第二金属层23，对第二金属层进行图案化处理形成源极和漏极。
S103、在所述有源层及所述第一极板上形成平坦层，所述平坦层上设置有开口区；
如图3所示，例如，在所述第二金属层上形成平坦层24，所述平坦层24上设置有开口区241；所述开口区241的位置与所述第一极板222的位置对应。
S104、在所述平坦层上及所述开口区内形成阳极层，以使与所述开口区的位置对应的阳极层形成第二极板；
如图3所示，例如，在所述平坦层24上及所述开口区241内形成阳极层25，以使与所述开口区241的位置对应的阳极层25形成第二极板251。所述平坦层24上还设置有过孔，所述阳极层25通过所述过孔与所述漏极连接。
S105、在所述阳极层上形成像素定义层，所述像素定义层上设置有像素定义区；
如图4所示，例如，在所述阳极层25上形成像素定义层26，所述像素定义层26上设置有像素定义区261，所述像素定义区261与所述开口区241的位置对应。其中在开口区241的底部未覆盖像素定义层26。
S106、在所述像素定义区内制作有机发光层；
结合图4和图5，例如，在所述像素定义区261内制作有机发光层27。
S107、在所述有机发光层上制作阴极。
如图5所示，例如，在所述有机发光层27上制作阴极28。
如图5所示，本发明还提供一种显示面板，其包括透光区域201和存储区域202，透光区域201用于设置有机发光单元；有机发光单元的截面结构包括阳极、有机发光层27以及阴极。
存储区域202用于设置存储电容，所述透光区域201和所述存储区域201的位置对应，所述存储电容包括第一极板222和第二极板251，所述第一极板222的材料和所述第二极板251的材料均为透明材料。
在一实施方式中，所述显示面板的截面结构还包括衬底基板11、第一金属层、有源层221、第二金属层23、平坦层24、阳极层25、像素定义层26、有机发光层27以及阴极28。
第一金属层设于衬底基板11上，所述第一金属层包括栅极21。所述有缘层221位于第一金属层上。所述第一极板222与所述有源层221位于同一层。当然，第一极板可位于其他层。在一实施方式中，为了简化制程工艺，所述第一极板222的初始材料和所述有源层221的材料相同，所述第一极板222是对所述有源层221的材料进行导体化处理得到的。在一实施方式中，所述有源层221的材料为透明金属氧化物。其中所述有源层221的材料为铟镓锌氧化物。当然第一极板222和有源层221也可单独制作。
所述第二金属层23设于有源层221上，第二金属层23包括源极和漏极。
结合图3，所述平坦层24位于所述第二金属层23上。所述平坦层24上还设置有过孔（图中未示出）和开口区241，所述开口区241的位置与所述第一极板222的位置对应。
在一实施方式中，所述第二极板251与所述阳极层25位于同一层。当然，第二极板251也可位于其他层。
其中，为了简化制程工艺，所述阳极层25位于所述平坦层24上及所述开口区241内，其中所述第二极板251为与所述开口区241的位置对应的阳极层，也即与所述开口区241的位置对应的阳极层25形成第二极板251。所述阳极层25可通过所述过孔与所述漏极连接。
结合图4，像素定义层26位于所述阳极层25上，所述像素定义层26上设置有像素定义区261，所述像素定义区261与所述开口区241的位置对应。
有机发光层27位于所述像素定义区261内。阴极28位于所述有机发光层27上。当然，显示面板还可包括封装层，封装层位于阴极28上。
可以理解的，本发明的显示面板的制作方法可采用上述方法制作，当然还可采用其他制作方法得到。
由于将透光区域和存储区域的位置对应，且第一极板的材料和第二极板的材料均为透明材料，因此在不降低开口率的同时减小了像素的占用面积，从而提高了显示面板的利用率。
本发明的显示面板及其制作方法，包括透光区域，用于设置有机发光单元；存储区域，用于设置存储电容，透光区域和存储区域的位置对应，所述存储电容包括第一极板和第二极板，且所述第一极板的材料和所述第二极板的材料均为透明材料，因此不会降低开口率，且透光区域和存储区域的位置对应，可以减小了像素的占用面积，进而提高了显示面板的利用率。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种显示面板，其包括：
    透光区域，用于设置有机发光单元；
    存储区域，用于设置存储电容，所述透光区域和所述存储区域的位置对应，所述存储电容包括第一极板和第二极板，所述第一极板的材料和所述第二极板的材料均为透明材料；
    其中，所述显示面板的截面结构包括有源层和阳极层，所述第一极板与所述有源层位于同一层，所述第二极板与所述阳极层位于同一层。
  2. 根据权利要求1所述的显示面板，其中
    所述第一极板的初始材料和所述有源层的材料相同，所述第一极板是对所述有源层的材料进行导体化处理得到的。
  3. 根据权利要求2所述的显示面板，其中
    所述有源层的材料为透明金属氧化物。
  4. 根据权利要求3所述的显示面板，其中
    所述有源层的材料为铟镓锌氧化物。
  5. 根据权利要求1所述的显示面板，其中所述显示面板的截面结构还包括：平坦层，所述平坦层上设置有开口区；所述开口区的位置与所述第一极板的位置对应；
    所述阳极层位于所述平坦层上及所述开口区内，其中所述第二极板为与所述开口区的位置对应的阳极层。
  6. 根据权利要求5所述的显示面板，其中所述显示面板的截面结构还包括：
    像素定义层，位于所述阳极层上，所述像素定义层上设置有像素定义区，所述像素定义区与所述开口区的位置对应；
    有机发光层，位于所述像素定义区内；
    阴极，位于所述有机发光层上。
  7. 根据权利要求5所述的显示面板，其中所述显示面板的截面结构还包括第二金属层，所述第二金属层包括源极和漏极；
    所述平坦层上还设置有过孔，所述阳极层通过所述过孔与所述漏极连接。
  8. 根据权利要求1所述的显示面板，其中所述显示面板的截面结构还包括第一金属层，所述第一金属层位于有源层的下方，所述第一金属层包括栅极。
  9. 一种显示面板，其包括：
    透光区域，用于设置有机发光单元；
    存储区域，用于设置存储电容，所述透光区域和所述存储区域的位置对应，所述存储电容包括第一极板和第二极板，所述第一极板的材料和所述第二极板的材料均为透明材料。
  10. 根据权利要求9所述的显示面板，其中所述显示面板的截面结构包括有源层，所述第一极板与所述有源层位于同一层。
  11. 根据权利要求9所述的显示面板，其中
    所述第一极板的初始材料和所述有源层的材料相同，所述第一极板是对所述有源层的材料进行导体化处理得到的。
  12. 根据权利要求11所述的显示面板，其中
    所述有源层的材料为透明金属氧化物。
  13. 根据权利要求12所述的显示面板，其中
    所述有源层的材料为铟镓锌氧化物。
  14. 根据权利要求9所述的显示面板，其中所述显示面板的截面结构包括阳极层，所述第二极板与所述阳极层位于同一层。
  15. 根据权利要求14所述的显示面板，其中所述显示面板的截面结构还包括：平坦层，所述平坦层上设置有开口区；所述开口区的位置与所述第一极板的位置对应；
    所述阳极层位于所述平坦层上及所述开口区内，其中所述第二极板为与所述开口区的位置对应的阳极层。
  16. 根据权利要求15所述的显示面板，其中所述显示面板的截面结构还包括：
    像素定义层，位于所述阳极层上，所述像素定义层上设置有像素定义区，所述像素定义区与所述开口区的位置对应；
    有机发光层，位于所述像素定义区内；
    阴极，位于所述有机发光层上。
  17. 根据权利要求16所述的显示面板，其中所述显示面板的截面结构还包括第二金属层，所述第二金属层包括源极和漏极；
    所述平坦层上还设置有过孔，所述阳极层通过所述过孔与所述漏极连接。
  18. 一种显示面板的制作方法，其包括：
    在衬底基板上制作透明薄膜，对所述透明薄膜进行图案化处理得到有源层和电极部；
    对所述电极部进行导体化处理，得到第一极板；
    在所述有源层及所述第一极板上形成平坦层，所述平坦层上设置有开口区；所述开口区的位置与所述第一极板的位置对应；
    在所述平坦层上及所述开口区内形成阳极层，以使与所述开口区的位置对应的阳极层形成第二极板；
    在所述阳极层上形成像素定义层，所述像素定义层上设置有像素定义区，所述像素定义区与所述开口区的位置对应；
    在所述像素定义区内制作有机发光层；
    在所述有机发光层上制作阴极。
  19. 根据权利要求18所述的显示面板的制作方法，其中所述透明薄膜的材料为透明金属氧化物。
  20. 根据权利要求18所述的显示面板的制作方法，其中所述透明薄膜的材料为铟镓锌氧化物。
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