WO2020258452A1 - 一种显示面板及其制备方法 - Google Patents

一种显示面板及其制备方法 Download PDF

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Publication number
WO2020258452A1
WO2020258452A1 PCT/CN2019/099549 CN2019099549W WO2020258452A1 WO 2020258452 A1 WO2020258452 A1 WO 2020258452A1 CN 2019099549 W CN2019099549 W CN 2019099549W WO 2020258452 A1 WO2020258452 A1 WO 2020258452A1
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WIPO (PCT)
Prior art keywords
layer
display panel
gate insulating
insulating layer
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/099549
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English (en)
French (fr)
Inventor
谢菲菲
刘泽钦
谢克成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US16/608,512 priority Critical patent/US11296129B2/en
Publication of WO2020258452A1 publication Critical patent/WO2020258452A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
    • G02F1/133723—Polyimide, polyamide-imide
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133388—Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6736—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes characterised by the shape of gate insulators

Definitions

  • the invention relates to the field of display technology, in particular to a display panel and a preparation method thereof.
  • liquid crystal display Liquid Crystal With the development of Display
  • ultra-narrow bezels have higher requirements for panel design and manufacturing.
  • the display area is closer to the edge of the glass substrate, and the sealant of the ultra-narrow frame is relatively inward, which places higher requirements on polyimide (PI) coating.
  • PI polyimide
  • Ink-jet Printer is one of the commonly used processes for PI coating.
  • due to the good fluidity of PI liquid it is not easy to control its boundary.
  • the design in the industry usually prepares barriers around the display area to avoid PI reflow and uncontrollable boundaries during the coating process of PI liquid.
  • This design method still has PI liquid backflow and overflow to a certain extent, causing the PI liquid to overflow the retaining wall to cause sealant pollution and peeling, which affects the narrow frame design.
  • An object of the present invention is to provide a display panel and a preparation method thereof, which can solve the PI liquid backflow and overflow in the prior art, which causes the PI liquid to overflow the retaining wall and cause the sealant pollution and peeling, which is beneficial to achieve narrow Border design.
  • an embodiment of the present invention provides a display panel, which is defined with a display area and an edge area; the display panel includes a substrate, a gate layer, a gate insulating layer, a thin film encapsulation layer, and polyimide Floor.
  • the gate layer is disposed on the substrate; the gate insulating layer is disposed on the gate layer; the thin film encapsulation layer is disposed on the gate insulating layer; the polyimide layer Disposed on the thin film encapsulation layer; wherein the gate insulating layer is provided with a buffer groove recessed downward at the position of the edge region, wherein the thin film encapsulation layer and the polyimide disposed thereon The layer is filled down into the buffer tank.
  • the gate layer of the buffer groove corresponding to the edge region is disposed on the gate insulating layer.
  • the shape of the buffer groove includes one or more of rectangle, arc, wave, and sawtooth.
  • the buffer tank includes one quantity.
  • the buffer tank includes two or more than two.
  • the display panel further includes a sealant, and the sealant is disposed on the film encapsulation layer away from the edge area of the display area.
  • the display panel further includes a first barrier wall, and the first barrier wall is disposed on the gate insulating layer on the side of the sealant away from the display area.
  • the display panel further includes a second retaining wall, and the second retaining wall is disposed on the gate insulating layer between the buffer groove and the sealant.
  • Another embodiment of the present invention also provides a method for preparing the display panel of the present invention, including the following steps: Step S1, providing a substrate, and defining the display area and the edge area of the display panel to be prepared; S2, preparing a gate layer on the substrate; step S3, preparing a gate insulating layer on the gate layer, the gate insulating layer is provided with a buffer groove recessed downward at the position of the edge region Step S4, prepare a thin film encapsulation layer on the gate insulating layer; and step S5, use an inkjet printing device to coat a polyimide solution on the thin film encapsulation layer to cure to form a polyimide layer; wherein The film encapsulation layer and the polyimide layer are downwardly filled into the buffer groove.
  • the buffer groove is formed by a photomask etching method.
  • the present invention relates to a display panel and a preparation method thereof.
  • a buffer groove on the gate insulating layer By providing a buffer groove on the gate insulating layer, the flow rate of the inkjet printed polyimide solution in the edge area when the polyimide layer is formed is It is greatly reduced, so that it solidifies to form a polyimide layer before crossing the retaining wall, thereby avoiding sealant pollution and peeling, and further reducing the distance between the edge of the display area and the retaining wall.
  • the width of the edge area can be designed to be relatively narrow, which is beneficial to realize a narrow frame design.
  • FIG. 1 is a schematic diagram of the structure of a display panel in the first embodiment of the present invention.
  • FIG. 2 is a schematic structural diagram of a display panel in the second embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of a display panel in the third embodiment of the present invention.
  • Fig. 4 is a flow chart of the method for manufacturing the display panel of the present invention.
  • Source and drain layer 8. Passivation layer
  • Color resisting layer 10. Indium tin oxide layer
  • the first retaining wall 41 The first retaining wall 42.
  • the component can be directly placed on the other component; there may also be an intermediate component on which the component is placed , And the intermediate component is placed on another component.
  • a component is described as “installed to” or “connected to” another component, both can be understood as directly “installed” or “connected”, or a component is “installed to” or “connected to” through an intermediate component Another component.
  • a display panel 100 which defines a display area 101 and an edge area 102; the display panel 100 includes a substrate 1, a gate layer 2, and a gate in order from bottom to top.
  • the gate insulating layer 3 is provided with a buffer groove 20 recessed downward at the position of the edge region 102; wherein the thin film encapsulation layer 4 and the polyimide layer 5 provided thereon are filled downwardly Into the buffer tank 20.
  • the buffer tank 20 can be used to reduce the flow rate of the polyimide solution used in the preparation of the polyimide layer 5 in the edge region 102.
  • the gate layer 2 extends from the display area 101 to the edge area 102, and the buffer groove 20 is disposed in the gate layer 2 corresponding to the edge area 102.
  • the gate layer 2 serves as a driving circuit, a part of which is located in the display area 101, and a part of it is located in the edge area 102, and the buffer groove 20 is in contact with the edge area 102.
  • the gate layer 2 is set accordingly.
  • the shape of the buffer groove 20 includes one or more of rectangle, arc, wave, and sawtooth. It should be noted that the shape of the buffer groove 20 is not limited to the above-mentioned shape.
  • the shape of the buffer groove 20 is rectangular, and the buffer groove 20 includes one number.
  • the buffer tank 20 can be used to reduce the flow rate of the polyimide solution used in the preparation of the polyimide layer 5 in the edge region 102.
  • the display panel 100 of the display area 101 includes the substrate 1, the gate layer 2, the gate insulating layer 3, the active layer 6, and the source and drain from bottom to top.
  • the display panel 100 further includes a sealant 30, and the sealant 30 is disposed on the thin film encapsulation layer 4 in the edge area 102 of the buffer groove 20 away from the display area 101.
  • the display panel 100 further includes a first barrier wall 41, and the first barrier wall 41 is disposed on the gate insulating layer 3 on the side of the sealant 30 away from the display area 101.
  • the display panel 100 further includes a second retaining wall 42 disposed on the gate insulating layer 3 between the buffer groove 20 and the sealant 30 .
  • a buffer groove 20 is provided on the gate insulating layer 3, so that when the polyimide layer 5 is formed, the flow speed of the inkjet-printed polyimide solution in the edge region 102 is greatly reduced, and thus This makes it solidify to form the polyimide layer 5 before crossing the second retaining wall 42, thereby avoiding contamination and peeling of the sealant 30, thereby reducing the gap between the edge of the display area 101 and the second retaining wall 42. That is, the width of the edge area 102 can be designed to be relatively narrow, which is beneficial to realize a narrow frame design.
  • the second embodiment includes all the technical features of the first embodiment.
  • the buffer groove 20 in the second embodiment is rectangular, and the buffer groove 20 includes two Or two or more than the number of buffer tanks 20 in the first embodiment.
  • the third embodiment includes all the technical features of the second embodiment.
  • the display panel 100 only includes the first retaining wall 41.
  • This arrangement is based on the premise that the buffer tank 20 is sufficient to prevent the pollution of the sealant 30 caused by the overflow and backflow of the polyimide solution.
  • the third embodiment can reduce the second retaining wall 42 and optimize the process.
  • another embodiment of the present invention provides a method for preparing the above-mentioned display panel 100, and the method includes the following steps:
  • a substrate 1 is provided, and the display panel 100 to be prepared is defined with a display area 101 and an edge area 102.
  • a gate layer 2 is prepared on the substrate 1.
  • a gate insulating layer 3 is prepared on the gate layer 2, and the gate insulating layer 3 is provided with a buffer groove 20 recessed downward at the position of the edge region 102.
  • a thin film encapsulation layer 4 is prepared on the gate insulating layer 3. as well as
  • S5 prepare a polyimide layer 5.
  • An inkjet printing device is used to coat a polyimide solution on the film encapsulation layer 4 to cure the polyimide layer 5.
  • the thin film encapsulation layer 4 and the polyimide layer 5 are filled downwardly into the buffer groove 20.
  • the buffer tank 20 is mainly used to reduce the flow rate of the polyimide solution in the edge region 102.
  • the buffer groove 20 is formed by a photomask etching method.
  • a buffer groove 20 is provided on the gate insulating layer 3, so that when the polyimide layer 5 is formed, the flow speed of the inkjet-printed polyimide solution in the edge region 102 is greatly reduced, and thus This makes it solidify to form the polyimide layer 5 before crossing the sealant 30, thereby avoiding contamination and peeling of the sealant 30, thereby reducing the distance between the edge of the display area 101 and the sealant 30, ie
  • the width of the edge region 102 can be designed to be relatively narrow, which is beneficial to realize a narrow frame design.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

本发明提供一种显示面板及其制备方法。其中所述显示面板定义有显示区和边缘区，所述显示面板包括基板、栅极层、栅极绝缘层、薄膜封装层和聚酰亚胺层。通过在所述栅极绝缘层上设置缓冲槽，使得在形成聚酰亚胺层时，喷墨打印的聚酰亚胺溶液在边缘区的流动速度减小，进而使得其在越过所述挡墙之前凝固形成聚酰亚胺层，从而可以避免框胶污染和剥离等现象。

Description

一种显示面板及其制备方法 技术领域
本发明涉及显示技术领域，具体涉及一种显示面板及其制备方法。
 背景技术
随着液晶显示器(LCD，Liquid Crystal Display)发展，现今超窄边框设计逐渐成为主流产品，但是超窄边框对于面板设计和制造有更高的要求。其显示区域距离玻璃基板边缘位置更近，超窄边框的框胶相对内移，这就对聚酰亚胺（Polyimide，PI）涂布要求更高。
 技术问题
喷墨打印（Ink-jet Printer）是PI涂布常用的工艺之一。但是由于PI液的流动性较好故不易控制其边界，业内设计通常是在显示区域外围制备挡墙来避免PI液在涂布过程中出现的PI回流及边界不可控等现象。这种设计方式在一定程度上仍然会存在PI液回流和溢出，使得PI液溢出所述挡墙造成框胶污染和剥离等现象，影响了窄边框设计。
因此，有必要提供一种新的显示面板及其制备方法，以克服现有技术中存在的问题。
 技术解决方案
本发明的一个目的是提供一种显示面板及其制备方法，其能够解决现有技术中存在的PI液回流和溢出，导致PI液溢出挡墙造成框胶污染和剥离等现象，有利于实现窄边框设计。
为了解决上述问题，本发明的一个实施方式提供了一种显示面板，定义有显示区和边缘区；所述显示面板包括基板、栅极层、栅极绝缘层、薄膜封装层和聚酰亚胺层。其中所述栅极层设置于所述基板上；所述栅极绝缘层设置于所述栅极层上；所述薄膜封装层设置于所述栅极绝缘层上；所述聚酰亚胺层设置于所述薄膜封装层上；其中所述栅极绝缘层在所述边缘区的位置处设置有向下凹陷的缓冲槽，其中所述薄膜封装层和其上设置的所述聚酰亚胺层向下填充到所述缓冲槽内。
进一步地，所述缓冲槽对应所述边缘区的栅极层设置于所述栅极绝缘层上。
进一步地，所述缓冲槽的形状包括矩形、弧形、波浪形、锯齿形中的一种或多种。
进一步地，所述缓冲槽包括1个数量。
进一步地，所述缓冲槽包括2个或2个以上的数量。
进一步地，所述显示面板还包括框胶，所述框胶设置于远离所述显示区的边缘区的薄膜封装层上。
进一步地，所述显示面板还包括第一挡墙，所述第一挡墙设置于所述框胶远离所述显示区的一侧的栅极绝缘层上。
进一步地，所述显示面板还包括第二挡墙，所述第二挡墙设置于所述缓冲槽与所述框胶之间的所述栅极绝缘层上。
本发明另一个实施例中还提供了一种制备本发明所涉及的显示面板的制备方法，包括以下步骤：步骤S1，提供一基板，将待制备的显示面板定义出显示区和边缘区；步骤S2，在所述基板上制备栅极层；步骤S3，在所述栅极层上制备栅极绝缘层，所述栅极绝缘层在所述边缘区的位置处设置有向下凹陷的缓冲槽；步骤S4，在所述栅极绝缘层上制备薄膜封装层；以及步骤S5，使用喷墨打印设备在薄膜封装层上涂布聚酰亚胺溶液以固化形成聚酰亚胺层；其中所述薄膜封装层和所述聚酰亚胺层向下填充到所述缓冲槽内。
进一步地，所述缓冲槽通过光罩掩膜刻蚀的方法制备形成。
 有益效果
本发明涉及一种显示面板及其制备方法，通过在所述栅极绝缘层上设置缓冲槽，使得在形成聚酰亚胺层时，喷墨打印的聚酰亚胺溶液在边缘区的流动速度大大减小，进而使得其在越过所述挡墙之前凝固形成聚酰亚胺层，从而可以避免框胶污染和剥离等现象，进而可降低显示区边缘与所述挡墙之间的距离，即可以将边缘区的宽度设计的比较窄，有利于实现窄边框设计。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明第一实施例中一种显示面板的结构示意图。
图2是本发明第二实施例中一种显示面板的结构示意图。
图3是本发明第三实施例中一种显示面板的结构示意图。
图4是本发明显示面板的制备方法的流程图。
图中部件标识如下：
100、显示面板                   101、显示区
102、边缘区
1、基板                         2、栅极层
3、栅极绝缘层                   4、薄膜封装层
5、聚酰亚胺层                   6、有源层
7、源漏极层                     8、钝化层
9、色阻层                       10、氧化铟锡层
20、缓冲槽                      30、框胶
41、第一挡墙                    42、第二挡墙
 本发明的实施方式
以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。
本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是附图中的方向，本文所使用的方向用语是用来解释和说明本发明，而不是用来限定本发明的保护范围。
在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。此外，为了便于理解和描述，附图所示的每一组件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。
当某些组件，被描述为“在”另一组件“上”时，所述组件可以直接置于所述另一组件上；也可以存在一中间组件，所述组件置于所述中间组件上，且所述中间组件置于另一组件上。当一个组件被描述为“安装至”或“连接至”另一组件时，二者可以理解为直接“安装”或“连接”，或者一个组件通过一中间组件“安装至”或“连接至”另一个组件。
实施例1
如图1所示，本发明第一实施例中提供一种显示面板100，定义有显示区101和边缘区102；所述显示面板100从下至上依次包括基板1、栅极层2、栅极绝缘层3、薄膜封装层4以及聚酰亚胺层5。其中所述栅极绝缘层3在所述边缘区102的位置处设置有向下凹陷的缓冲槽20；其中所述薄膜封装层4和其上设置的所述聚酰亚胺层5向下填充到所述缓冲槽20内。其中所述缓冲槽20能够用于降低制备所述聚酰亚胺层5时采用的聚酰亚胺溶液在所述边缘区102的流动速度。
如图1所示，在本实施例中，所述栅极层2由所述显示区101延伸至所述边缘区102，所述缓冲槽20对应所述边缘区102的栅极层2设置于所述栅极绝缘层3上。换句话讲，所述栅极层2作为驱动电路，其一部分位于所述显示区101内，一部分位于所述边缘区102内，所述缓冲槽20与位于所述边缘区102内的所述栅极层2相应设置。
如图1所示，其中所述缓冲槽20的形状包括矩形、弧形、波浪形、锯齿形中的一种或多种。值得说明的是，缓冲槽20的形状并不局限于上述形状。
如图1所示，在本实施例中所述缓冲槽20的形状为矩形，所述缓冲槽20包括一个数量。所述缓冲槽20能够用于降低制备所述聚酰亚胺层5时采用的聚酰亚胺溶液在所述边缘区102的流动速度。
如图1所示，其中所述显示区101的所述显示面板100从下至上依次包括所述基板1、所述栅极层2、所述栅极绝缘层3、有源层6、源漏极层7、钝化层8、色阻层9、氧化铟锡层10、所述薄膜封装层4和所述聚酰亚胺层5。值得说明的是，所述显示区101的结构为现有技术，其更详细的结构在此不做赘述。
如图1所示，所述显示面板100还包括框胶30，所述框胶30设置于所述缓冲槽20远离所述显示区101的边缘区102的薄膜封装层4上。
如图1所示，所述显示面板100还包括第一挡墙41，所述第一挡墙41设置于所述框胶30远离所述显示区101的一侧的栅极绝缘层3上。
如图1所示，所述显示面板100还包括第二挡墙42，所述第二挡墙42设置于所述缓冲槽20与所述框胶30之间的所述栅极绝缘层3上。
本实施例通过在所述栅极绝缘层3上设置缓冲槽20，使得在形成聚酰亚胺层5时，喷墨打印的聚酰亚胺溶液在边缘区102的流动速度大大减小，进而使得其在越过所述第二挡墙42之前凝固形成聚酰亚胺层5，从而可以避免框胶30污染和剥离等现象，进而可降低显示区101边缘与所述第二挡墙42之间的距离，即可以将边缘区102的宽度设计的比较窄，有利于实现窄边框设计。
实施例2
如图2所示，在第二实施例中包括第一实施例中全部的技术特征，其区别在于，第二实施例中的所述缓冲槽20为矩形，且所述缓冲槽20包括2个或2个以上的数量，而不是实施例一中的一个数量的缓冲槽20。通过增加缓冲槽20的数量可以多次拦截制备所述聚酰亚胺层5时采用的聚酰亚胺溶液在所述边缘区102的流动，从而降低其流动速度。
实施例3
如图3所示，在第三实施例中包括第二实施例中全部的技术特征，其区别在于，在第三实施例中，所述显示面板100仅包括第一挡墙41。这样设置是基于缓冲槽20的足以阻挡聚酰亚胺溶液溢出和回流现象造成的框胶30污染的现象的前提下，第三实施例可以减少第二道挡墙42，可优化工艺。
如图4所示，本发明的又一实施例中提供一种制备上述显示面板100的制备方法，所述方法包括以下步骤：
S1、提供一基板1，将待制备的显示面板100定义有显示区101和边缘区102。
S2、制备栅极层2。在所述基板1上制备栅极层2。
S3、制备栅极绝缘层3。在所述栅极层2上制备栅极绝缘层3，所述栅极绝缘层3在所述边缘区102的位置处设置有向下凹陷的缓冲槽20。
S4、制备薄膜封装层4。在所述栅极绝缘层3上制备薄膜封装层4。以及
S5、制备聚酰亚胺层5。使用喷墨打印设备在薄膜封装层4上涂布聚酰亚胺溶液以固化形成聚酰亚胺层5。
其中所述薄膜封装层4和所述聚酰亚胺层5向下填充到所述缓冲槽20内。所述缓冲槽20主要是用于降低所述聚酰亚胺溶液在所述边缘区102的流动速度。
在本实施例中，所述缓冲槽20通过光罩掩膜刻蚀的方法制备形成。
本实施例通过在所述栅极绝缘层3上设置缓冲槽20，使得在形成聚酰亚胺层5时，喷墨打印的聚酰亚胺溶液在边缘区102的流动速度大大减小，进而使得其在越过所述框胶30之前凝固形成聚酰亚胺层5，从而可以避免框胶30污染和剥离等现象，进而可降低显示区101边缘与所述框胶30之间的距离，即可以将边缘区102的宽度设计的比较窄，有利于实现窄边框设计。
以上对本发明所提供的显示面板及其制备方法进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。在每个示例性实施方式中对特征或方面的描述通常应被视作适用于其他示例性实施例中的类似特征或方面。尽管参考示例性实施例描述了本发明，但可建议所属领域的技术人员进行各种变化和更改。本发明意图涵盖所附权利要求书的范围内的这些变化和更改，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种显示面板，定义有显示区和边缘区，其包括：
    基板；
    栅极层，所述栅极层设置于所述基板上；
    栅极绝缘层，所述栅极绝缘层设置于所述栅极层上；
    薄膜封装层，所述薄膜封装层设置于所述栅极绝缘层上；
    聚酰亚胺层，所述聚酰亚胺层设置于所述薄膜封装层上；
    其中所述栅极绝缘层在所述边缘区的位置处设置有向下凹陷的缓冲槽，其中所述薄膜封装层和其上设置的所述聚酰亚胺层向下填充到所述缓冲槽内。
  2. 根据权利要求1所述的显示面板，其中所述缓冲槽对应所述边缘区的栅极层设置于所述栅极绝缘层上。
  3. 根据权利要求1所述的显示面板，其中所述缓冲槽的形状包括矩形、弧形、波浪形、锯齿形中的一种或多种。
  4. 根据权利要求3所述的显示面板，其中所述缓冲槽包括1个数量。
  5. 根据权利要求3所述的显示面板，其中所述缓冲槽包括2个或2个以上的数量。
  6. 根据权利要求1所述的显示面板，其中还包括框胶，所述框胶设置于远离所述显示区的边缘区的薄膜封装层上。
  7. 根据权利要求6所述的显示面板，其中还包括第一挡墙，所述第一挡墙设置于所述框胶远离所述显示区的一侧的栅极绝缘层上。
  8. 根据权利要求6所述的显示面板，其中还包括第二挡墙，所述第二挡墙设置于所述缓冲槽与所述框胶之间的所述栅极绝缘层上。
  9. 一种制备权利要求1所述的显示面板的制备方法，其中包括以下步骤：
    步骤S1，提供一基板，将待制备的显示面板定义出显示区和边缘区；
    步骤S2，在所述基板上制备栅极层；
    步骤S3，在所述栅极层上制备栅极绝缘层，所述栅极绝缘层在所述边缘区的位置处设置有向下凹陷的缓冲槽；
    步骤S4，在所述栅极绝缘层上制备薄膜封装层；以及
    步骤S5，使用喷墨打印设备在薄膜封装层上涂布聚酰亚胺溶液以固化形成聚酰亚胺层；
    其中所述薄膜封装层和所述聚酰亚胺层向下填充到所述缓冲槽内。
  10. 根据权利要求9所述的显示面板的制备方法，其中所述缓冲槽通过光罩掩膜刻蚀的方法制备形成。
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