CN110335873A - 一种显示面板及其制备方法 - Google Patents
一种显示面板及其制备方法 Download PDFInfo
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- 239000010408 film Substances 0.000 claims 2
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- 238000010586 diagram Methods 0.000 description 3
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- H—ELECTRICITY
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
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- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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Abstract
本发明提供一种显示面板及其制备方法。其中所述显示面板定义有显示区和边缘区,所述显示面板包括基板、栅极层、栅极绝缘层、薄膜封装层和聚酰亚胺层。通过在所述栅极绝缘层上设置缓冲槽,使得在形成聚酰亚胺层时,喷墨打印的聚酰亚胺溶液在边缘区的流动速度大大减小,进而使得其在越过所述挡墙之前凝固形成聚酰亚胺层,从而可以避免框胶污染和剥离等现象,进而可降低显示区边缘与所述挡墙之间的距离,即可以将边缘区的宽度设计的比较窄,有利于实现窄边框设计。
Description
技术领域
本发明涉及显示技术领域,具体涉及一种显示面板及其制备方法。
背景技术
随着液晶显示器(LCD,Liquid Crystal Display)发展,现今超窄边框设计逐渐成为主流产品,但是超窄边框对于面板设计和制造有更高的要求。其显示区域距离玻璃基板边缘位置更近,超窄边框的框胶相对内移,这就对聚酰亚胺(Polyimide,PI)涂布要求更高。喷墨打印(Ink-jet Printer)是PI涂布常用的工艺之一。但是由于PI液的流动性较好故不易控制其边界,业内设计通常是在显示区域外围制备色阻所述挡墙来避免PI液在涂布过程中出现的PI回流及边界不可控等现象。这种设计方式在一定程度上仍然会存在PI液回流和溢出,使得PI液溢出色阻所述挡墙造成框胶污染和剥离等现象,影响了窄边框设计。
因此,有必要提供一种新的显示面板及其制备方法,以克服现有技术中存在的问题。
发明内容
本发明的一个目的是提供一种显示面板及其制备方法,其能够解决现有技术中存在的PI液回流和溢出,导致PI液溢出挡墙造成框胶污染和剥离等现象,有利于实现窄边框设计。
为了解决上述问题,本发明的一个实施方式提供了一种显示面板,定义有显示区和边缘区;所述显示面板包括基板、栅极层、栅极绝缘层、薄膜封装层和聚酰亚胺层。其中所述栅极层设置于所述基板上;所述栅极绝缘层设置于所述栅极层上;所述薄膜封装层设置于所述栅极绝缘层上;所述聚酰亚胺层设置于所述薄膜封装层上;其中所述栅极绝缘层在所述边缘区的位置处设置有向下凹陷的缓冲槽,其中所述薄膜封装层和其上设置的所述聚酰亚胺层向下填充到所述缓冲槽内。
进一步地,所述缓冲槽对应所述边缘区的栅极层设置于所述栅极绝缘层上。
进一步地,所述缓冲槽的形状包括矩形、弧形、波浪形、锯齿形中的一种或多种。
进一步地,所述缓冲槽包括1个数量。
进一步地,所述缓冲槽包括2个或2个以上的数量。
进一步地,所述显示面板还包括框胶,所述框胶设置于所述缓冲槽远离所述显示区的边缘区的薄膜封装层上。
进一步地,所述显示面板还包括第一挡墙,所述第一挡墙设置于所述框胶远离所述显示区的一侧的栅极绝缘层上。
进一步地,所述显示面板还包括第二挡墙,所述第二挡墙设置于所述缓冲槽与所述框胶之间的所述栅极绝缘层上。
本发明另一个实施例中还提供了一种制备本发明所涉及的显示面板的制备方法,包括以下步骤:步骤S1,提供一基板,将待制备的显示面板定义出显示区和边缘区;步骤S2,在所述基板上制备栅极层;步骤S3,在所述栅极层上制备栅极绝缘层,所述栅极绝缘层在所述边缘区的位置处设置有向下凹陷的缓冲槽;步骤S4,在所述栅极绝缘层上制备薄膜封装层;以及步骤S5,使用喷墨打印设备在薄膜封装层上涂布聚酰亚胺溶液以固化形成聚酰亚胺层;其中所述薄膜封装层和所述聚酰亚胺层向下填充到所述缓冲槽内。
进一步地,所述缓冲槽通过光罩掩膜刻蚀的方法制备形成。
本发明的优点是:本发明涉及一种显示面板及其制备方法,通过在所述栅极绝缘层上设置缓冲槽,使得在形成聚酰亚胺层时,喷墨打印的聚酰亚胺溶液在边缘区的流动速度大大减小,进而使得其在越过所述挡墙之前凝固形成聚酰亚胺层,从而可以避免框胶污染和剥离等现象,进而可降低显示区边缘与所述挡墙之间的距离,即可以将边缘区的宽度设计的比较窄,有利于实现窄边框设计。
附图说明
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1是本发明第一实施例中一种显示面板的结构示意图。
图2是本发明第二实施例中一种显示面板的结构示意图。
图3是本发明第三实施例中一种显示面板的结构示意图。
图4是本发明显示面板的制备方法的流程图。
图中部件标识如下:
100、显示面板 101、显示区
102、边缘区
1、基板 2、栅极层
3、栅极绝缘层 4、薄膜封装层
5、聚酰亚胺层 6、有源层
7、源漏极层 8、钝化层
9、色阻层 10、氧化铟锡层
20、缓冲槽 30、框胶
41、第一挡墙 42、第二挡墙
具体实施方式
以下结合说明书附图详细说明本发明的优选实施例,以向本领域中的技术人员完整介绍本发明的技术内容,以举例证明本发明可以实施,使得本发明公开的技术内容更加清楚,使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现,本发明的保护范围并非仅限于文中提到的实施例,下文实施例的说明并非用来限制本发明的范围。
本发明所提到的方向用语,例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等,仅是附图中的方向,本文所使用的方向用语是用来解释和说明本发明,而不是用来限定本发明的保护范围。
在附图中,结构相同的部件以相同数字标号表示,各处结构或功能相似的组件以相似数字标号表示。此外,为了便于理解和描述,附图所示的每一组件的尺寸和厚度是任意示出的,本发明并没有限定每个组件的尺寸和厚度。
当某些组件,被描述为“在”另一组件“上”时,所述组件可以直接置于所述另一组件上;也可以存在一中间组件,所述组件置于所述中间组件上,且所述中间组件置于另一组件上。当一个组件被描述为“安装至”或“连接至”另一组件时,二者可以理解为直接“安装”或“连接”,或者一个组件通过一中间组件“安装至”或“连接至”另一个组件。
实施例1
如图1所示,本发明第一实施例中提供一种显示面板100,定义有显示区101和边缘区102;所述显示面板100从下至上依次包括基板1、栅极层2、栅极绝缘层3、薄膜封装层4以及聚酰亚胺层5。其中所述栅极绝缘层3在所述边缘区102的位置处设置有向下凹陷的缓冲槽20;其中所述薄膜封装层4和其上设置的所述聚酰亚胺层5向下填充到所述缓冲槽20内。其中所述缓冲槽20能够用于降低制备所述聚酰亚胺层5时采用的聚酰亚胺溶液在所述边缘区102的流动速度。
如图1所示,在本实施例中,所述栅极层2由所述显示区101延伸至所述边缘区102,所述缓冲槽20对应所述边缘区102的栅极层2设置于所述栅极绝缘层3上。换句话讲,所述栅极层2作为驱动电路,其一部分位于所述显示区101内,一部分位于所述边缘区102内,所述缓冲槽20与位于所述边缘区102内的所述栅极层2相应设置。
如图1所示,其中所述缓冲槽20的形状包括矩形、弧形、波浪形、锯齿形中的一种或多种。值得说明的是,缓冲槽20的形状并不局限于上述形状。
如图1所示,在本实施例中所述缓冲槽20的形状为矩形,所述缓冲槽20包括一个数量。所述缓冲槽20能够用于降低制备所述聚酰亚胺层5时采用的聚酰亚胺溶液在所述边缘区102的流动速度。
如图1所示,其中所述显示区101的所述显示面板100从下至上依次包括所述基板1、所述栅极层22、所述栅极绝缘层3、有源层6、源漏极层7、钝化层8、色阻层9、氧化铟锡层10、所述薄膜封装层4和所述聚酰亚胺层5。值得说明的是,所述显示区101的结构为现有技术,其更详细的结构在此不做赘述。
如图1所示,所述显示面板100还包括框胶30,所述框胶30设置于所述缓冲槽20远离所述显示区101的边缘区102的薄膜封装层4上。
如图1所示,所述显示面板100还包括第一挡墙41,所述第一挡墙41设置于所述框胶30远离所述显示区101的一侧的栅极绝缘层3上。
如图1所示,所述显示面板100还包括第二挡墙42,所述第二挡墙42设置于所述缓冲槽20与所述框胶30之间的所述栅极绝缘层3上。
本实施例通过在所述栅极绝缘层3上设置缓冲槽20,使得在形成聚酰亚胺层5时,喷墨打印的聚酰亚胺溶液在边缘区102的流动速度大大减小,进而使得其在越过所述挡墙30之前凝固形成聚酰亚胺层5,从而可以避免框胶40污染和剥离等现象,进而可降低显示区101边缘与所述挡墙30之间的距离,即可以将边缘区102的宽度设计的比较窄,有利于实现窄边框设计。
实施例2
如图2所示,在第二实施例中包括第一实施例中全部的技术特征,其区别在于,第二实施例中的所述缓冲槽20为矩形,且所述缓冲槽20包括2个或2个以上的数量,而不是实施例一中的一个数量的缓冲槽20。通过增加缓缓槽20的数量可以多次拦截制备所述聚酰亚胺层5时采用的聚酰亚胺溶液在所述边缘区102的流动,从而降低其流动速度。
实施例3
如图3所示,在第三实施例中包括第二实施例中全部的技术特征,其区别在于,在第三实施例中,所述显示面板100仅包括第一挡墙41。这样设置是基于缓冲槽20的足以阻挡聚酰亚胺溶液溢出和回流现象造成的框胶30污染的现象的前提下,第三实施例可以减少第二道挡墙42,可优化工艺。
如图4所示,本发明的又一实施例中提供一种制备上述显示面板100的制备方法,所述方法包括以下步骤:
S1、提供一基板1,将待制备的显示面板100定义有显示区101和边缘区102;
S2、制备栅极层2步骤,在所述基板1上制备栅极层2;
S3、制备栅极绝缘层3步骤,在所述栅极层2上制备栅极绝缘层3,所述栅极绝缘层3在所述边缘区102的位置处设置有向下凹陷的缓冲槽20;
S4、制备薄膜封装层4步骤,在所述栅极绝缘层3上制备薄膜封装层4;以及
S5、制备聚酰亚胺层5步骤,使用喷墨打印设备在薄膜封装层4上涂布聚酰亚胺溶液以固化形成聚酰亚胺层5;
其中所述薄膜封装层4和所述聚酰亚胺层5向下填充到所述缓冲槽20内。所述缓冲槽20主要是用于降低所述聚酰亚胺溶液在所述边缘区102的流动速度。
在本实施例中,所述缓冲槽20通过光罩掩膜刻蚀的方法制备形成。
本实施例通过在所述栅极绝缘层3上设置缓冲槽20,使得在形成聚酰亚胺层5时,喷墨打印的聚酰亚胺溶液在边缘区102的流动速度大大减小,进而使得其在越过所述挡墙30之前凝固形成聚酰亚胺层5,从而可以避免框胶40污染和剥离等现象,进而可降低显示区101边缘与所述挡墙30之间的距离,即可以将边缘区102的宽度设计的比较窄,有利于实现窄边框设计。
以上对本发明所提供的显示面板及其制备方法进行了详细介绍。应理解,本文所述的示例性实施方式应仅被认为是描述性的,用于帮助理解本发明的方法及其核心思想,而并不用于限制本发明。在每个示例性实施方式中对特征或方面的描述通常应被视作适用于其他示例性实施例中的类似特征或方面。尽管参考示例性实施例描述了本发明,但可建议所属领域的技术人员进行各种变化和更改。本发明意图涵盖所附权利要求书的范围内的这些变化和更改,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种显示面板,定义有显示区和边缘区,其特征在于,包括:
基板;
栅极层,所述栅极层设置于所述基板上;
栅极绝缘层,所述栅极绝缘层设置于所述栅极层上;
薄膜封装层,所述薄膜封装层设置于所述栅极绝缘层上;
聚酰亚胺层,所述聚酰亚胺层设置于所述薄膜封装层上;
其中所述栅极绝缘层在所述边缘区的位置处设置有向下凹陷的缓冲槽,其中所述薄膜封装层和其上设置的所述聚酰亚胺层向下填充到所述缓冲槽内。
2.根据权利要求1所述的显示面板,其特征在于,所述缓冲槽对应所述边缘区的栅极层设置于所述栅极绝缘层上。
3.根据权利要求1所述的显示面板,其特征在于,所述缓冲槽的形状包括矩形、弧形、波浪形、锯齿形中的一种或多种。
4.根据权利要求3所述的显示面板,其特征在于,所述缓冲槽包括1个数量。
5.根据权利要求3所述的显示面板,其特征在于,所述缓冲槽包括2个或2个以上的数量。
6.根据权利要求1所述的显示面板,其特征在于,还包括框胶,所述框胶设置于所述缓冲槽远离所述显示区的边缘区的薄膜封装层上。
7.根据权利要求6所述的显示面板,其特征在于,还包括第一挡墙,所述第一挡墙设置于所述框胶远离所述显示区的一侧的栅极绝缘层上。
8.根据权利要求6所述的显示面板,其特征在于,还包括第二挡墙,所述第二挡墙设置于所述缓冲槽与所述框胶之间的所述栅极绝缘层上。
9.一种制备权利要求1所述的显示面板的制备方法,其特征在于,包括以下步骤:
步骤S1,提供一基板,将待制备的显示面板定义出显示区和边缘区;
步骤S2,在所述基板上制备栅极层;
步骤S3,在所述栅极层上制备栅极绝缘层,所述栅极绝缘层在所述边缘区的位置处设置有向下凹陷的缓冲槽;
步骤S4,在所述栅极绝缘层上制备薄膜封装层;以及
步骤S5,使用喷墨打印设备在薄膜封装层上涂布聚酰亚胺溶液以固化形成聚酰亚胺层;
其中所述薄膜封装层和所述聚酰亚胺层向下填充到所述缓冲槽内。
10.根据权利要求9所述的显示面板的制备方法,其特征在于,所述缓冲槽通过光罩掩膜刻蚀的方法制备形成。
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