WO2020255752A1 - Procédé de production de dispositif électronique - Google Patents

Procédé de production de dispositif électronique Download PDF

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Publication number
WO2020255752A1
WO2020255752A1 PCT/JP2020/022285 JP2020022285W WO2020255752A1 WO 2020255752 A1 WO2020255752 A1 WO 2020255752A1 JP 2020022285 W JP2020022285 W JP 2020022285W WO 2020255752 A1 WO2020255752 A1 WO 2020255752A1
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WO
WIPO (PCT)
Prior art keywords
layer
laminated structure
determination
wavelength
functional
Prior art date
Application number
PCT/JP2020/022285
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English (en)
Japanese (ja)
Inventor
英司 岸川
貴志 藤井
Original Assignee
住友化学株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 住友化学株式会社 filed Critical 住友化学株式会社
Publication of WO2020255752A1 publication Critical patent/WO2020255752A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/166—Electron transporting layers comprising a multilayered structure

Definitions

  • the hole injection layer 4a is a functional layer having a function of improving the hole injection efficiency from the anode layer 3 to the light emitting layer 4c.
  • the hole injection layer 4a may be an inorganic layer or an organic layer.
  • the hole injection material constituting the hole injection layer 4a may be a low molecular weight compound or a high molecular weight compound.
  • the hole transport layer 4b is an organic layer containing a hole transport material.
  • the hole transport material is not limited as long as it is an organic compound having a hole transport function.
  • Examples of the organic compound having a hole transport function include polyvinylcarbazole or a derivative thereof, polysilane or a derivative thereof, a polysiloxane derivative having an aromatic amine residue on the side chain or the main chain, a pyrazoline derivative, an arylamine derivative, and a stillben derivative.
  • dye-based material examples include cyclopendamine derivatives, tetraphenylbutadiene derivative compounds, triphenylamine derivatives, oxaziazole derivatives, pyrazoloquinolin derivatives, distyrylbenzene derivatives, distyrylarylene derivatives, pyrrole derivatives, and thiophene ring compounds. , Pylin ring compounds, perinone derivatives, perylene derivatives, oligothiophene derivatives, oxaziazole dimers, pyrazoline dimers, quinacridone derivatives, coumarin derivatives and the like.
  • the electron transport material include oxadiazole derivatives, anthraquinodimethane or its derivatives, benzoquinone or its derivatives, naphthoquinone or its derivatives, anthraquinone or its derivatives, tetracyanoanthraquinodimethane or its derivatives, fluorenone derivatives, Examples thereof include diphenyldicyanoethylene or a derivative thereof, a diphenoquinone derivative, or a metal complex of 8-hydroxyquinoline or a derivative thereof, polyquinolin or a derivative thereof, polyquinoxaline or a derivative thereof, polyfluorene or a derivative thereof, and the like.
  • the number of light emitting layers 4c included in the device function unit 4 may be one or two or more.
  • the laminated structure arranged between the anode layer 3 and the cathode layer 5 is referred to as [structural unit I] and has two layers.
  • the layer configuration shown in (j) below can be mentioned.
  • the layer structure of the two structural units I may be the same as or different from each other.
  • each device forming region has an anode layer 3 and a device function. Part 4 and the cathode layer 5 are formed. As a result, the organic EL device 1 is formed for each device forming region. Therefore, a plurality of organic EL devices 1 can be manufactured by separating the long substrate 2 into individual pieces for each device forming region.
  • FIG. 4 schematically shows an optical system for measuring the reflectance of the laminated structure 20.
  • the laminated structure 20 carried out from the heating device 32 in the transport path of the base substrate 10 is irradiated with light including a certain wavelength range from the light source 33, and is reflected by the laminated structure 20.
  • the light is detected by the spectroscope 34.
  • the light source 33 include halogen lamps, xenon lamps, mercury lamps, deuterium lamps, AlGaN-based ultraviolet LEDs, and the like.
  • the spectroscope 34 may be any one that can disperse and detect light in the wavelength range of the light output by the light source 33.
  • K1 ( ⁇ ) K1 ( ⁇ )
  • K2 ( ⁇ ) K1 ( ⁇ ) and K2 ( ⁇ ) are equations (2a) or (2b).
  • K1 ( ⁇ ) (L ( ⁇ ) -L0 ( ⁇ )) / L0 ( ⁇ ) ...
  • K2 ( ⁇ ) (L ( ⁇ ) -L0 ( ⁇ )) ⁇ 100 ...
  • the manufacturing methods of the devices D1, D2, and D4 were the same except that the method of forming the light emitting layer of the devices D1, D2, and D4 was different. Therefore, the evaluation of the optical characteristics of the samples S1, the sample S2, and the sample S3 is based on the optical characteristics of the laminated structure of the hole transport layer (first functional layer) and the light emitting layer (second functional layer) in the devices D1, D2, and D4. Corresponds to the evaluation.
  • the absolute value of R2 ( ⁇ ) with respect to the determination wavelength corresponds to the left side of the equation (1b) when the reflectance is adopted as the optical characteristic value, and the determination reference value is the second predetermined value of the condition 2 (that is, the equation). Corresponds to B) of (1b). Since the evaluation of the sample S2 and the sample S3 corresponds to the determination of whether or not the optical characteristic value acquired in the optical characteristic value acquisition step S11 shown in FIG. 3 satisfies the determination condition in the manufacturing process of the device D2 and the device D4. When the condition 2 is adopted, by setting the second predetermined value to 0.008, the device (device D2) having substantially the same device characteristics as the device D1 or the device characteristics with respect to the device D1.
  • FIG. 10 is a graph showing a change in transmittance (transmittance distribution) with respect to wavelength, with a horizontal axis showing wavelength (nm) and a vertical axis showing transmittance (%).

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un procédé de production de dispositif électronique qui peut améliorer le rendement de production.　Un procédé de production de dispositif électronique selon un mode de réalisation, qui est un procédé comprenant une étape consistant à former une partie fonctionnelle de dispositif comprenant des première et seconde couches fonctionnelles et une étape consistant à former une seconde couche d'électrode sur la partie fonctionnelle de dispositif, comprend : une étape de formation de structure stratifiée consistant à former une structure stratifiée comprenant les première et seconde couches fonctionnelles ; une étape consistant à acquérir l'un quelconque des éléments parmi la réflectance, la transmittance, l'absorption, l'indice de réfraction et le coefficient d'extinction en tant que valeur de propriété optique de la structure stratifiée par rapport à une longueur d'onde de détermination ; et une étape consistant à déterminer si la valeur de propriété optique satisfait ou non une condition de détermination. L'étape de formation de structure stratifiée a une étape de revêtement consistant à appliquer, sur la première couche fonctionnelle, un liquide de revêtement qui comprend un matériau de la seconde couche fonctionnelle pour former un film de revêtement, et une étape de chauffage consistant à chauffer le film de revêtement en vue d'obtenir la seconde couche fonctionnelle. Si la condition de détermination n'est pas satisfaite, une étape de réglage consistant à régler la température de chauffage du film de revêtement ou le temps de transition de l'étape de revêtement à l'étape de chauffage est effectuée avant que la seconde couche d'électrode ne soit formée.
PCT/JP2020/022285 2019-06-20 2020-06-05 Procédé de production de dispositif électronique WO2020255752A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019114893A JP2021002454A (ja) 2019-06-20 2019-06-20 電子デバイスの製造方法
JP2019-114893 2019-06-20

Publications (1)

Publication Number Publication Date
WO2020255752A1 true WO2020255752A1 (fr) 2020-12-24

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Application Number Title Priority Date Filing Date
PCT/JP2020/022285 WO2020255752A1 (fr) 2019-06-20 2020-06-05 Procédé de production de dispositif électronique

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JP (1) JP2021002454A (fr)
TW (1) TW202101809A (fr)
WO (1) WO2020255752A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008238195A (ja) * 2007-03-26 2008-10-09 Tokki Corp 有機デバイス加工装置及び有機デバイス加工方法
JP2009301769A (ja) * 2008-06-11 2009-12-24 Seiko Epson Corp 有機エレクトロルミネッセンス装置、およびその製造装置
US20160355924A1 (en) * 2015-06-08 2016-12-08 Applied Materials, Inc. Mask for deposition system and method for using the mask
JP2018185992A (ja) * 2017-04-26 2018-11-22 Sumitomo Chemical Co Ltd 電極付き基板、積層基板及び有機デバイスの製造方法
JP2020515704A (ja) * 2018-03-12 2020-05-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板の自動光学的検査のための装置及び方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008238195A (ja) * 2007-03-26 2008-10-09 Tokki Corp 有機デバイス加工装置及び有機デバイス加工方法
JP2009301769A (ja) * 2008-06-11 2009-12-24 Seiko Epson Corp 有機エレクトロルミネッセンス装置、およびその製造装置
US20160355924A1 (en) * 2015-06-08 2016-12-08 Applied Materials, Inc. Mask for deposition system and method for using the mask
JP2018185992A (ja) * 2017-04-26 2018-11-22 Sumitomo Chemical Co Ltd 電極付き基板、積層基板及び有機デバイスの製造方法
JP2020515704A (ja) * 2018-03-12 2020-05-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板の自動光学的検査のための装置及び方法

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JP2021002454A (ja) 2021-01-07
TW202101809A (zh) 2021-01-01

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