WO2020250878A1 - 研磨ヘッド、当該研磨ヘッドを備える研磨装置、および当該研磨装置を用いた研磨方法 - Google Patents

研磨ヘッド、当該研磨ヘッドを備える研磨装置、および当該研磨装置を用いた研磨方法 Download PDF

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Publication number
WO2020250878A1
WO2020250878A1 PCT/JP2020/022649 JP2020022649W WO2020250878A1 WO 2020250878 A1 WO2020250878 A1 WO 2020250878A1 JP 2020022649 W JP2020022649 W JP 2020022649W WO 2020250878 A1 WO2020250878 A1 WO 2020250878A1
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WIPO (PCT)
Prior art keywords
liquid
polishing
polishing head
liquid reservoir
substrate
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Application number
PCT/JP2020/022649
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English (en)
French (fr)
Japanese (ja)
Inventor
磨奈人 古澤
賢一 赤澤
小林　賢一
Original Assignee
株式会社荏原製作所
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Publication of WO2020250878A1 publication Critical patent/WO2020250878A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a polishing head, a polishing device provided with the polishing head, and a polishing method using the polishing device.
  • the present application claims priority based on Japanese Patent Application No. 2019-109718 filed June 12, 2019. All disclosures, including the specification, claims, drawings and abstracts of Japanese Patent Application No. 2019-109718, are incorporated herein by reference in their entirety.
  • CMP (Chemical Mechanical Polishing) equipment is one of the substrate polishing equipment used in the semiconductor processing process.
  • the CMP device can be divided into "face-up type (method in which the surface to be polished on the substrate is upward)” and “face-down type (method in which the surface to be polished on the substrate is downward)” depending on the direction in which the surface to be polished of the substrate is facing. Can be separated.
  • Patent Document 1 Japanese Unexamined Patent Publication No. 10-15823
  • Patent Document 1 Japanese Unexamined Patent Publication No. 10-15823
  • Patent Document 1 Japanese Unexamined Patent Publication No. 10-15823
  • Patent Document 1 Japanese Unexamined Patent Publication No. 10-15823
  • Patent Document 1 is a face-up type CMP apparatus, which supplies a polishing liquid to a surface to be polished through a through hole provided in a rotating polishing head. The device is disclosed.
  • Patent Document 2 Japanese Unexamined Patent Publication No. 11-135463 also discloses a face-up type CMP apparatus.
  • a polishing liquid is supplied to the polishing body main body from a nozzle located above the tubular rotating polishing body main body, and from a supply hole formed in a polishing pad attached to the lower end side of the polishing body main body.
  • a CMP apparatus that supplies a polishing liquid to a substrate is disclosed.
  • Patent Document 1 does not specify a specific configuration regarding the connection between the polishing liquid supply source and the polishing head. However, in order to supply the polishing liquid to the through hole provided in the polishing head which is a rotating body, a rotary joint (or a part or part having the same function as the rotary joint: hereinafter simply referred to as a rotary joint) is provided. It seems necessary.
  • the parts inside the rotary joint may be altered by a chemical reaction with the polishing liquid. Further, when the polishing liquid passes through the rotary joint, the abrasive grains contained in the polishing liquid may wear the parts inside the rotary joint. Deterioration and / or wear of the rotary joint can destabilize the supply of the abrasive and also cause the abrasive to leak. Therefore, it is preferable that the rotary joint be replaced regularly. However, costs (material costs, labor costs, etc.) are required to replace the rotary joint. Further, since it is necessary to stop the operation of the device during the parts replacement work, the mobility of the device may decrease due to the parts replacement work.
  • polishing liquids for CMP equipment do not contain abrasive grains (abrasive grain-less polishing liquid). In this case, it is considered that the parts are not worn by the abrasive grains. However, even when an abrasive grain-less polishing liquid is used, deterioration of parts may occur due to a reaction with the polishing liquid.
  • the CMP apparatus of Patent Document 2 supplies a liquid such as a polishing liquid, a chemical liquid and / or a cleaning liquid (hereinafter, simply referred to as a liquid) to the polishing body main body from the upper side of the polishing body main body via a nozzle, and supplies the polishing pad to the polishing pad. Since the configuration is based on the premise that the liquid is supplied to the substrate by gravity from the formed supply holes, the supply speed of the liquid to the substrate is limited. The CMP apparatus of Patent Document 2 cannot supply a large amount of liquid because the polishing body body overflows when an amount of liquid exceeding the limit amount is supplied from the nozzle, and as a result, it is disadvantageous in improving the apparatus performance such as polishing speed. There is a possibility of becoming.
  • a liquid such as a polishing liquid, a chemical liquid and / or a cleaning liquid
  • one object of the present application is to supply a sufficient amount of liquid to a substrate without going through a rotary joint in a face-up type polishing apparatus.
  • the present application is, as an embodiment, for a polishing head for a polishing device that holds the substrate so that the surface to be polished of the substrate faces upward, and for receiving a liquid provided around the rotation axis of the polishing head.
  • Liquid reservoir a liquid inlet provided above the liquid reservoir for injecting liquid into the liquid reservoir, and a lower part of the liquid reservoir to drain the liquid from the liquid reservoir.
  • a polishing head provided with a liquid discharge port and a pumping unit for pumping the liquid received by the liquid reservoir unit through the liquid discharge port.
  • FIG. 1 is a front view of the polishing apparatus according to the embodiment.
  • FIG. 2 is a top view of the polishing apparatus according to the embodiment.
  • FIG. 3 is a front sectional view of the polishing head according to the embodiment.
  • FIG. 4 is a top view of the polishing head according to the embodiment.
  • FIG. 5 is a front sectional view of the polishing head according to the embodiment.
  • FIG. 6 is a front sectional view of the polishing head according to the embodiment.
  • FIG. 7 is a flowchart illustrating a polishing method according to an embodiment.
  • FIG. 8 is a flowchart illustrating a polishing method according to an embodiment.
  • FIG. 9 is a flowchart illustrating a polishing method according to an embodiment.
  • FIG. 1 is a front view of the polishing apparatus 1000 according to the embodiment.
  • the left-right direction in FIG. 1 is the X direction (the right side of the paper surface is positive)
  • the direction perpendicular to the paper surface is the Y direction (the front side of the paper surface is positive)
  • the vertical direction is the Z direction (the upper side of the paper surface is positive).
  • the polishing apparatus 1000 in FIG. 1 is a face-up type CMP apparatus.
  • the polishing device 1000 does not have to be a CMP device as long as it is a face-up type polishing device that uses a liquid such as a polishing solution, a chemical solution, and / or a cleaning solution.
  • the face-up type polishing device is a polishing device that holds the substrate so that the surface to be polished of the substrate faces upward, and is a polishing device that polishes the substrate using a polishing pad.
  • the polishing device 1000 includes a surface plate 100, a substrate pressurizing unit 150, a polishing head 200, and a liquid supply nozzle 300.
  • the polishing device 1000 further includes a control unit 400 for controlling each component of the polishing device 1000.
  • the surface plate 100 is an example of a substrate support mechanism for detachably supporting the substrate 110, and is provided to support the substrate 110 to be polished and to hold the substrate 110 so as not to shift during polishing.
  • the substrate 110 is detachably supported on the upper surface of the surface plate 100.
  • the surface plate 100 may not only support the entire supported surface (back surface) of the substrate 110, but may also partially support the supported surface of the substrate 110.
  • the substrate pressurizing portion 150 is provided on the lower side of the substrate 110, and is configured to press the substrate 110 against the polishing head 200.
  • the substrate 110 may have a circular shape, a square shape, or any other shape. A plurality of substrate pressurizing portions 150 may exist for one substrate 110.
  • the polishing head 200 is provided at a position facing the surface plate 100 with the substrate 110 interposed therebetween.
  • a polishing pad 500 is detachably attached to the lower surface of the polishing head 200.
  • the polishing device 1000 further includes a rotation mechanism 610.
  • the rotation mechanism 610 is capable of rotating the polishing head 200 around the shaft 240.
  • the rotation axis of the polishing head 200 is in the Z direction.
  • shaft in the present specification refers to "mechanical parts that transmit power by rotation (parts that actually exist)", and “rotational axis" is a "straight line that is the center of rotational movement". (Mathematical or virtual straight line) ".
  • the polishing device 1000 further includes a vertical movement mechanism 630 for moving the polishing head 200 in the Z direction to absorb the difference in thickness of the substrate 110.
  • a vertical movement mechanism 630 for moving the polishing head 200 in the Z direction to absorb the difference in thickness of the substrate 110.
  • the vertical movement mechanism 630 is configured to drive the polishing head 200 up and down, but the substrate 110 is moved up and down so that the upper surface of the substrate 110 is in contact with the polishing pad 500 by moving the surface plate 100 up and down. It may be.
  • the polishing device 1000 further includes a horizontal moving mechanism 640 for horizontally moving the polishing head 200.
  • the horizontal movement mechanism 640 of FIG. 1 is configured to move the polishing head 200 in the X direction.
  • the horizontal movement mechanism 640 may be a mechanism for moving the polishing head 200 in the X direction and / or the Y direction.
  • the polishing head 200 is horizontally moved with respect to the substrate 110, but even if the substrate 110 is horizontally moved with respect to the polishing head 200 by driving the surface plate 100. Good.
  • By relatively horizontally moving the substrate 110 and the polishing head 200 it is possible to polish the entire surface of the substrate 110 larger than the polishing pad 500 and suppress unevenness in the polishing amount.
  • An airbag (not shown) for adjusting the pressing force between the polishing pad 500 and the substrate 110 may be provided on the lower surface of the polishing head 200.
  • the substrate pressurizing portion 150 may not be provided.
  • the substrate 110 is shown larger than the polishing pad 500.
  • the polishing head 200 may be larger or smaller than the surface plate 100.
  • the sizes of the substrate 110, the polishing pad 500, the polishing head 200, and the surface plate 100 refer to the area when they are viewed from above or below, that is, the projected area on the XY plane.
  • the liquid supply nozzle 300 is provided to supply a liquid such as a polishing liquid, a chemical liquid, and / or a cleaning liquid held in the liquid source 310 to the polishing device 1000. More specifically, the liquid supply nozzle 300 is provided so as to drop or flow the liquid from the upper part of the polishing head 200 into the liquid reservoir portion 230.
  • the liquid source 310 may be an element that constitutes a part of the polishing apparatus 1000. As an addition or alternative, it is also possible to use a liquid source 310 separate from the polishing apparatus 1000.
  • the polishing device 1000 includes a flow rate adjusting mechanism 320 for adjusting the amount of liquid supplied from the liquid supply nozzle 300.
  • the flow rate adjusting mechanism 320 may be controlled by the control unit 400. In FIG.
  • one liquid source 310 is connected to one liquid supply nozzle 300.
  • a plurality of liquid sources 310 may be connected to one liquid supply nozzle 300.
  • the number of liquid supply nozzles 300 is not limited to one.
  • one or a plurality of separate and independent liquid sources 310 may be connected to each liquid supply nozzle 300.
  • one liquid source 310 may be connected to the plurality of liquid supply nozzles 300.
  • the liquid supply nozzle 300 cannot be rotated by the rotation mechanism 610. In other words, the liquid supply nozzle 300 is not rotated by the rotation mechanism 610 even while the rotation mechanism 610 is rotating the polishing head 200. Therefore, when the liquid is supplied from the liquid source 310 to the liquid reservoir 230, the liquid does not pass through the inside of the rotating component. Therefore, according to the configuration of FIG. 1, it is not necessary to provide the rotary joint in the polishing apparatus 1000.
  • a CMP device for a large substrate for example, a large glass substrate
  • FPD Felat Panel Display
  • the polishing head 200 is rotated at high speed in order to shorten the polishing time. Then, the rotary joint reaches the end of its life in a short period of time due to the influence of the abrasive grains contained in the polishing liquid, which complicates the maintenance of the polishing apparatus 1000.
  • the maintenance load of the polishing apparatus 1000 can be reduced.
  • a rotary joint for example, cooling water for cooling the polishing pad 500 is circulated and supplied in a flow path provided parallel to the polishing surface of the polishing pad 500 at the lower part of the polishing head 200. The configuration with the added rotary joint) is not excluded.
  • the liquid supply nozzle 300 may be configured to be moved by a vertical movement mechanism 630 and / or a horizontal movement mechanism 640.
  • a vertical movement mechanism 630 and / or a horizontal movement mechanism 640 By configuring the liquid supply nozzle 300 to be moved by the vertical movement mechanism 630 and / or the horizontal movement mechanism 640, it becomes easy to make the liquid supply nozzle 300 follow the parallel movement of the polishing head 200.
  • the liquid supply nozzle 300 may be configured so as not to be moved by the vertical movement mechanism 630 and / or the horizontal movement mechanism 640.
  • By making the liquid supply nozzle 300 and the vertical movement mechanism 630 and / or the horizontal movement mechanism 640 independent of each other it is considered that the degree of freedom in designing the device is improved and the liquid source 310 can be easily replaced. It is also possible to further provide a moving mechanism for moving the liquid supply nozzle 300 independently of the vertical moving mechanism 630 and the horizontal moving mechanism 640.
  • FIG. 2 is a top view of the polishing apparatus 1000 according to the embodiment.
  • the polishing apparatus 1000 may include a plurality of (four in this embodiment) polishing heads 200.
  • the plurality of polishing heads 200 can be rotated synchronously by the rotation mechanism 610, or can be independently rotated by the rotation mechanism 610.
  • the plurality of polishing heads 200 can be moved in the X direction and / or the Y direction by the horizontal movement mechanism 640.
  • FIG. 3 is a front sectional view of the polishing head 200 according to the embodiment.
  • the polishing head 200 includes a liquid reservoir 230 for receiving liquid, which is provided around the shaft 240 of the polishing head 200.
  • the polishing head 200 includes a plate-shaped base 210 having an opening in the center and a side wall 220 provided around the opening of the base 210.
  • a polishing pad 500 is detachably attached to the lower surface of the substrate 210.
  • a pad hole 502 having a diameter slightly larger than the opening of the base 210 is formed at a position corresponding to the opening of the base 210.
  • a plate-shaped flange 242 is attached to the lower end of the shaft 240 of the polishing head 200.
  • the liquid reservoir 230 includes an opening of the substrate 210, a side wall 220, and a space surrounded by the flange 242, and is configured to hold the liquid in this space.
  • the side wall 220 is formed in a dome shape having an opening at the top. Specifically, the side wall 220 has a first side wall 222 having a first inner diameter ⁇ and a second inner diameter ⁇ smaller than the first inner diameter ⁇ , and is provided above the first side wall 222. Includes a second side wall 224.
  • the liquid reservoir 230 is formed so that the inner diameter of the lower part is wider than the inner diameter of the upper part and / or the inner diameter is wider from the upper part to the lower part.
  • the shape of the side wall 220 is not limited to a dome shape as long as it has a shape such as a conical shape or a pyramid shape in which the radial distance decreases toward the upper part.
  • the polishing head 200 includes a liquid injection port 270 provided above the liquid reservoir 230 for injecting a liquid into the liquid reservoir 230. Specifically, an annular opening surrounding the shaft 240 is formed at the top of the dome-shaped side wall 220, and this opening serves as a liquid injection port 270. Further, the polishing head 200 includes a liquid discharge port 260 provided below the liquid reservoir portion 230 for discharging the liquid from the liquid reservoir portion 230. A plurality of liquid discharge ports 260 are evenly provided on the outer peripheral portion of the lower portion of the liquid reservoir portion 230, specifically, the outer peripheral portion of the flange 242. Further, the polishing head 200 includes a pumping unit 250 for pumping the liquid received by the liquid reservoir unit 230 through the liquid discharge port 260. In the embodiment of FIG. 3, the substrate 210, the side wall 220, the shaft 240, the flange 242, and the pumping portion 250 are integrally formed.
  • FIG. 4 is a top view of the polishing head according to the embodiment.
  • the pumping section 250 includes an impeller 252 attached to the shaft 240 of the polishing head 200 inside the liquid reservoir section 230.
  • the blades of the impeller 252 have a base end attached to the shaft 240 and a tip extending radially outward.
  • the blades of the impeller 252 are inclined to the side opposite to the rotation direction (arc-shaped arrow P) of the polishing head 200 at a predetermined angle ⁇ with respect to the radiation direction indicated by the broken line R.
  • the angle ⁇ determines various parameters such as the rotation speed of the polishing head 200, the dimensions of the polishing head 200, the properties of the liquid supplied from the liquid supply nozzle 300, and the amount of liquid to be supplied to the polishing surface of the polishing pad 500. It may be decided in consideration. For example, ⁇ is a value greater than 5 ° and less than 85 °.
  • the impeller 252 of the present embodiment is provided with eight blades, but the number and shape of the blades of the impeller 252 can be arbitrarily set in consideration of the function of pumping the liquid. Further, the blades of the impeller 252 may extend in the radial direction without being tilted.
  • the liquid discharge port 260 is formed at a position corresponding to the tip of the blade of the impeller 252 on the outer peripheral portion of the flange 242.
  • the liquid discharge port 260 communicates the inside of the liquid reservoir portion 230 with the pad hole 502 of the polishing pad 500.
  • the number and shape of the liquid discharge ports 260 can be arbitrarily set in consideration of the function of pumping the liquid through the liquid discharge port 260.
  • the liquid supplied from the liquid supply nozzle 300 and received by the liquid reservoir unit 230 is pressure-fed by the pumping unit 250 and flows into the pad hole 502 through the liquid discharge port 260.
  • the polishing head 200 rotates while the substrate 110 is being polished.
  • the liquid received by the liquid reservoir 230 is pumped through the liquid discharge port 260 by the impeller 252 that rotates with the rotation of the polishing head 200 (shaft 240), and polishes the polishing pad 500 through the pad hole 502. Reach the surface. Due to the rotation of the polishing head 200, the liquid that reaches the polishing surface of the polishing pad 500 receives a force toward the outside of the polishing head 200 in the radial direction.
  • the liquid may move to the outside of the polishing head 200 in the radial direction during the polishing of the substrate 110.
  • the pumping unit 250 forcibly discharges the liquid inside the liquid reservoir unit 230 to the polishing surface, and the liquid supply does not rely on gravity, so that a large flow rate of liquid is polished. It is possible to supply to the surface.
  • On the polished surface of the polishing pad 500 grooves in a radial, concentric, XY-directional grid, or any combination thereof (more specifically, Japanese Patent Application No. 2018-132231) for allowing the liquid to flow radially outward.
  • the polishing pad may have a pad hole 502 of the present embodiment formed in the central portion of the polishing pad 352) or a dimple-shaped depression.
  • the liquid reservoir 230 needs to be shaped so that the liquid does not overflow due to centrifugal force.
  • the shape of the liquid reservoir 230 is increased from top to bottom, and the liquid is pushed out to the lower liquid discharge port 260 by centrifugal force.
  • centrifugal force it is possible to prevent the liquid from overflowing from the liquid reservoir portion 230 due to centrifugal force.
  • a CMP apparatus for a large substrate used for an FPD (Flat Panel Display) or the like it is assumed that the large substrate is fixed face-up and polished with a small-diameter polishing pad.
  • the polishing head 200 is rotated at high speed in order to shorten the polishing time. Then, a strong centrifugal force is applied to the liquid inside the liquid reservoir 230, and the liquid may overflow from the liquid reservoir 230.
  • the liquid is caused by the centrifugal force. It is possible to prevent it from overflowing.
  • gravity since gravity also acts on the liquid, if the shape of the liquid reservoir 230 is as shown in the present embodiment, the liquid discharge port 260 provided on the outer peripheral portion of the bottom surface of the liquid reservoir 230 due to the resultant force with the centrifugal force. The liquid will flow into.
  • FIG. 5 is a front sectional view of the polishing head according to the embodiment. The description of the same configuration as that of the polishing head 200 shown in FIG. 3 will be omitted.
  • the polishing head 200 further includes a space 232 communicating with the liquid discharge port 260.
  • the space 232 is a space provided under the liquid reservoir portion 230, and is a space formed by an opening formed in the center of the substrate 210 having substantially the same diameter as the pad hole 502.
  • the shaft 240 of the polishing head 200 is hollow.
  • the pumping section 250 includes a drive shaft 254 that passes through the inside of the shaft 240 and an impeller 256 that is provided in space 232 and is coupled to the drive shaft 254.
  • the drive shaft 254 can rotate the impeller 256 independently of the rotation of the shaft 240.
  • the impeller 256 may include a plurality of blades extending radially outward from the drive shaft 254.
  • the plurality of blades may be provided at predetermined intervals along the circumferential direction of the drive shaft 254.
  • the plurality of blades can be configured in any shape and structure for pumping the liquid inside the space 232 outward in the radial direction, for example, an impeller of a general centrifugal pump.
  • the impeller 256 for pumping the liquid inside the space 232 outward in the radial direction will be described as an example, but the impeller 256 is not limited to this.
  • the impeller 256 may include a propeller-like shape and structure that pumps the liquid inside the space 232 towards the substrate 110.
  • the pressure feeding unit 250 has a structure in which the impeller 256 is rotated to send the liquid to the polished surface by centrifugal force, and the liquid in the liquid reservoir unit 230 is sucked by the negative pressure generated by the rotation.
  • a different configuration may be used as long as it functions as.
  • the impeller 256 includes a propeller-like shape and structure
  • the liquid inside the space 232 is pumped toward the substrate 110 and collides with the substrate 110.
  • the substrate 110 and the polishing pad 500 are pumped outward in the radial direction in the same manner as described above.
  • the drive shaft 254 can rotate the impeller 256 independently of the rotation of the shaft 240, the drive shaft 254 supplies the liquid reservoir portion 230 independently of the rotation of the polishing head 200.
  • the liquid can be pumped. For example, suppose that a large amount of liquid is desired to be supplied to the polishing surface of the polishing pad 500 while the polishing head 200 is not rotating or is rotating at a low speed. In this case, for example, in the embodiment shown in FIG. 3, since the liquid held in the liquid reservoir 230 is not subjected to much centrifugal force, the liquid supply depends on gravity, and the liquid is applied to the polished surface of the polishing pad 500. It is possible that it does not spread sufficiently.
  • the drive shaft 254 is rotated independently of the rotation of the polishing head 200 even when the polishing head 200 is not rotating or is rotating at a low speed.
  • a large amount of liquid held in the liquid reservoir portion 230 can be supplied to the polished surface of the polishing pad 500.
  • FIG. 6 is a front sectional view of the polishing head according to the embodiment.
  • the drive shaft 254 is rotationally driven by the drive motor 255. Further, the drive shaft 254 is held by the shaft 240 via a bearing 257. Further, a seal member 259 is provided between the hollow portion of the shaft 240 and the space 232 in order to prevent the liquid from entering the hollow portion of the shaft 240. Also in the embodiment of FIG. 5, a drive motor 255, a bearing 257, and a seal member 259 may be provided.
  • the pumping unit 250 When the pumping unit 250 is configured to suck liquid from the liquid reservoir unit 230 using negative pressure, the space 232 including the pumping unit 250 must always be filled with the liquid, and for that purpose, the liquid discharge port 260 Liquid must be constantly infused into. However, if the suction amount of the liquid in the pumping unit 250 is smaller than the inflow amount of the liquid from the liquid supply nozzle 300, the liquid overflows from the liquid reservoir unit 230. That is, the pumping unit 250 needs to adjust the output so that the liquid reservoir unit 230 does not overflow and the liquid discharge port 260 is always filled with the liquid.
  • the polishing device 1000 may include a liquid level monitoring device 700 to monitor whether the liquid is overflowing from the liquid reservoir 230 and whether the liquid discharge port 260 is filled with the liquid.
  • the liquid level monitoring device 700 is a device capable of measuring the liquid level of the liquid held inside the liquid reservoir unit 230.
  • the liquid level monitoring device 700 may also be provided in the embodiments of FIGS. 3 and 5.
  • the control unit 400 controls the drive output of the pumping unit 250 based on the measured value of the liquid level monitoring device 700, and adjusts so that the inflow amount of the liquid from the liquid supply nozzle 300 and the suction amount of the pumping unit 250 are always equal. can do.
  • the flow rate adjusting mechanism 320 is controlled by the control unit 400, the flow rate of the flow rate adjusting mechanism 320 or the amount of time change thereof may be used for controlling the pumping unit 250.
  • the pumping portion 250 is located at the center of the polishing pad 500 and the liquid is supplied from the outer peripheral portion of the pumping portion 250 to the polishing surface, so that the polishing pad 500 is annular.
  • the shape of the polishing pad 500 may be a different shape other than the annular shape.
  • FIG. 7 shows a flowchart for polishing the substrate 110 using the polishing head 200 described with reference to FIG.
  • FIG. 7 is a flowchart illustrating a polishing method according to an embodiment.
  • the substrate 110 and the polishing pad 500 are not in contact with each other at the start of the flowchart, and that the liquid reservoir 230 is substantially free of liquid.
  • the polishing pad 500 is brought into contact with the upper surface of the substrate 110 by the vertical movement mechanism 630 or the horizontal movement mechanism 640 (step 710).
  • the pad hole 502 is blocked by the substrate 110, and when the liquid is poured into the liquid reservoir portion 230, the liquid reservoir portion 230 can be filled with the liquid.
  • the polishing method causes the liquid to flow into the liquid reservoir 230 from the liquid supply nozzle 300 (step 712).
  • the pumping unit 250 and the polishing head 200 are driven (rotated) by driving (rotating) the shaft 240 to supply the liquid in the liquid reservoir unit 230 to the polishing surface and start polishing (). Step 714).
  • the polishing head 200 is moved in the horizontal direction (X direction and / or Y direction) by the horizontal movement mechanism 640 to change the polishing position of the substrate 110 until the polishing of the entire surface of the substrate 110 is completed. Polishing is repeated (step 720).
  • the polishing method when the polishing of the entire surface of the substrate 110 is completed (step 720, Yes), the polishing pad 500 is separated from the substrate 110 (step 722).
  • the rotation of the pumping unit 250 and the polishing head 200 is stopped by stopping the drive of the shaft 240, and the polishing is completed (step 724).
  • the polishing method stops the inflow of liquid from the liquid supply nozzle 300 (step 726). As a result, all the liquid in the liquid reservoir 230 is discharged by gravity and becomes empty.
  • FIGS. 8 and 9 show a flowchart for polishing the substrate 110 using the polishing head 200 described with reference to FIG. 8 and 9 are flowcharts illustrating the polishing method according to the embodiment.
  • the substrate 110 and the polishing pad 500 are not in contact with each other at the start of the flowchart, and that the liquid reservoir 230 is substantially free of liquid.
  • the polishing pad 500 is brought into contact with the upper surface of the substrate 110 by the vertical movement mechanism 630 or the horizontal movement mechanism 640 (step 810).
  • the substrate 110 closes the opening of the space 232 including the pumping section 250, and when the liquid is poured into the liquid reservoir section 230, the space 232 including the pumping section 250 can be filled with the liquid.
  • the polishing method causes the liquid to flow into the liquid reservoir 230 from the liquid supply nozzle 300 (step 812).
  • the polishing method uses the liquid level monitoring device 700 to wait until the liquid level in the liquid reservoir portion 230 reaches the reference position (step 814).
  • the reference position referred to here is a liquid level position where the liquid does not overflow from the liquid reservoir portion 230 and a sufficient amount of liquid can be secured so that the space 232 including the pumping portion 250 and the liquid discharge port 260 can be filled with the liquid. is there.
  • step 816 the pumping unit 250 is driven (rotated) to supply the liquid in the liquid reservoir unit 230 to the polished surface.
  • step 818 the polishing head 200 is rotated to start polishing (step 818). Note that step 818 is immediately after step 816 and may be executed at substantially the same time.
  • the polishing method controls the output of the pumping unit 250 based on the measurement result of the liquid level monitoring device 700 to adjust so that the liquid level in the liquid reservoir unit 230 always maintains the reference position (step 820). ). Details of step 820 will be described later with reference to FIG.
  • the polishing head 200 is moved in the horizontal direction (X direction and / or Y direction) by the horizontal movement mechanism 640 to change the polishing position of the substrate 110 until the polishing of the entire surface of the substrate 110 is completed.
  • Step 820 is repeated (step 830).
  • the polishing method when the polishing of the entire surface of the substrate 110 is completed (step 830, Yes), the polishing pad 500 is separated from the substrate 110 (step 832).
  • the rotation of the polishing head 200 is stopped to end the polishing (step 834).
  • the polishing method stops the rotation of the pumping unit 250 and stops the supply of liquid to the polished surface (step 836).
  • the polishing method stops the inflow of liquid from the liquid supply nozzle 300 (step 838). As a result, all the liquid in the liquid reservoir 230 is discharged by gravity and becomes empty.
  • the liquid level position in the liquid reservoir 230 is measured using the liquid level monitoring device 700 (step 821). Subsequently, the polishing method compares the liquid level position measured in step 821 with the reference position (step 823). When the liquid level is equal to the reference position, that is, when the liquid level is at the reference position (step 823, Yes), the output of the pumping unit 250 is maintained as it is, so that the process ends as it is.
  • the polishing method proceeds to step 825 because it is necessary to control the output when the liquid level is not at the reference position (step 823, No).
  • the polishing method compares whether the liquid level position measured in step 821 is lower than the reference position (step 825). As for the polishing method, when the liquid level position measured in step 821 is lower than the reference position (step 825, Yes), the liquid discharge amount of the pumping unit 250 exceeds the inflow amount of the liquid supply nozzle 300, so the process proceeds to step 829. Proceed and reduce the output of the pumping unit 250 (step 829). As a result, the amount of discharge from the liquid reservoir 230 is reduced, so that the liquid level position rises.
  • step 821 when the liquid level position measured in step 821 is higher than the reference position (step 825, No), the liquid discharge amount of the pumping unit 250 does not catch up with the inflow amount from the liquid supply nozzle 300.
  • the process proceeds to step 827 to increase the output of the pumping unit 250 (step 827).
  • the amount of liquid discharged from the liquid reservoir 230 increases, so that the liquid level position drops.
  • the flow of output control of the basic pumping unit 250 is as described above. However, when the flow rate adjusting mechanism 320 is adjusted during polishing and the inflow amount to the liquid reservoir unit 230 changes, the amount of change is measured by the pumping unit 250. It may be reflected in the control. For example, when the inflow amount increases, the output of the pumping unit 250 is increased in advance without waiting for feedback by the liquid level monitoring device 700 in anticipation that the liquid level in the liquid reservoir unit 230 will increase. You may.
  • the liquid supply nozzle 300 is provided prior to the movement of the polishing pad 500, at the same time as the movement of the polishing pad 500, or after the movement of the polishing pad 500.
  • a step may be added to move the liquid to the top of the liquid inlet 270.
  • a step of dressing the polishing pad 500 with a dresser may be added after step 832.
  • the vertical movement, horizontal movement and / or rotation of the polishing head 200 does not necessarily have to be performed by the vertical movement mechanism 630, the horizontal movement mechanism 640 and / or the rotation mechanism 610.
  • steps 810 and 832 may be performed by the moving mechanism for the surface plate 100.
  • the polishing head 200 may be moved or rotated by an actuator or the like independent of the polishing device 1000.
  • the user may move or rotate the polishing head 200. Polishing may be performed according to a method other than the method shown in the flowcharts of FIGS. 7, 8 and 9.
  • the present application is, as an embodiment, for a polishing head for a polishing device that holds the substrate so that the surface to be polished of the substrate faces upward, and for receiving a liquid provided around a rotating shaft of the polishing head.
  • Liquid reservoir a liquid inlet provided above the liquid reservoir for injecting liquid into the liquid reservoir, and a lower part of the liquid reservoir to drain the liquid from the liquid reservoir.
  • a polishing head provided with a liquid discharge port and a pumping unit for pumping the liquid received by the liquid reservoir unit through the liquid discharge port.
  • This polishing head has the effect of being able to supply a sufficient amount of liquid to the substrate without going through a rotary joint as an example.
  • the present application discloses, as an embodiment, a polishing head in which a liquid reservoir portion is formed so that the inner diameter increases from the upper part to the lower part.
  • This polishing head has the effect of preventing the liquid inside the liquid reservoir from overflowing due to centrifugal force as an example.
  • a polishing head in which a liquid discharge port is provided on an outer peripheral portion of a lower portion of a liquid reservoir portion.
  • This polishing head plays an example of the effect that the liquid inside the liquid reservoir can be poured into the liquid discharge port by centrifugal force.
  • the present application discloses, as an embodiment, a polishing head in which the pumping unit includes an impeller attached to a rotating shaft of the polishing head inside the liquid reservoir unit.
  • This polishing head has a structure in which the pumping part forcibly discharges the liquid inside the liquid reservoir part to the polishing surface and does not rely on gravity to supply the liquid, so that a large flow rate of liquid is supplied to the polishing surface.
  • the effect of being able to do it is played as an example.
  • the present application further includes a space communicating with the liquid discharge port, the rotating shaft of the polishing head is hollow, and the pumping portion is in the space with the drive shaft passing through the inside of the rotating shaft of the polishing head.
  • polishing heads including an impeller provided and coupled to a drive shaft.
  • this polishing head has the effect of being able to supply a large amount of liquid held in the liquid reservoir to the polishing surface of the polishing pad independently of the rotation of the polishing head.
  • a substrate support mechanism for detachably supporting the substrate on the upper surface, a polishing head according to any one of the above, and a polishing head provided so as to face the substrate support mechanism.
  • a polishing apparatus comprising a liquid supply nozzle for supplying a liquid to a liquid reservoir through a liquid inlet of the above.
  • the content of this disclosure clarifies the device to which the polishing head according to any of the embodiments is applied.
  • the present application is, as an embodiment, a polishing method using the above-mentioned polishing apparatus, in which a step of bringing a polishing pad attached to the lower surface of a polishing head into contact with a substrate and a liquid being supplied from a liquid supply nozzle to a liquid reservoir portion.
  • a polishing method including a step of supplying and a step of driving a pumping unit is disclosed.
  • This polishing method has the effect of being able to supply a sufficient amount of liquid to the substrate without going through a rotary joint as an example.
  • polishing method using the above-mentioned polishing apparatus, wherein the polishing head is rotated independently of the step of driving the pumping unit, and the step of controlling the driving of the pumping unit is performed.
  • polishing methods including.
  • This polishing method has an example of the effect that a large amount of liquid held in the liquid reservoir can be supplied to the polishing surface of the polishing pad independently of the rotation of the polishing head.
  • the step of controlling the drive of the pumping unit is a step of measuring the liquid level position of the liquid supplied to the liquid reservoir unit and a step of comparing the liquid level position of the liquid with the reference position.
  • a polishing method including the step of maintaining, raising, or lowering the drive output of the pumping unit according to the comparison result between the liquid level position and the reference position of the liquid.
  • this polishing method has the effect that the liquid does not overflow from the liquid reservoir portion and a sufficient amount of liquid can be secured so that the space including the pumping portion and the liquid discharge port can be filled with the liquid.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
PCT/JP2020/022649 2019-06-12 2020-06-09 研磨ヘッド、当該研磨ヘッドを備える研磨装置、および当該研磨装置を用いた研磨方法 WO2020250878A1 (ja)

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JP7312965B2 (ja) 2019-11-01 2023-07-24 パナソニックＩｐマネジメント株式会社 情報処理装置、情報処理方法、およびプログラム
JP7065356B2 (ja) 2019-11-11 2022-05-12 パナソニックＩｐマネジメント株式会社 情報処理装置、情報処理方法、およびプログラム
CN114800254B (zh) * 2022-03-21 2023-04-07 安徽禾臣新材料有限公司 一种抛光用无蜡垫及其制备方法

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