WO2020237831A1 - 一种cf盖板、其制备方法及其显示面板 - Google Patents

一种cf盖板、其制备方法及其显示面板 Download PDF

Info

Publication number
WO2020237831A1
WO2020237831A1 PCT/CN2019/099593 CN2019099593W WO2020237831A1 WO 2020237831 A1 WO2020237831 A1 WO 2020237831A1 CN 2019099593 W CN2019099593 W CN 2019099593W WO 2020237831 A1 WO2020237831 A1 WO 2020237831A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
light
cover plate
dam
substrate
Prior art date
Application number
PCT/CN2019/099593
Other languages
English (en)
French (fr)
Inventor
李文杰
Original Assignee
深圳市华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to US16/615,699 priority Critical patent/US20210408126A1/en
Publication of WO2020237831A1 publication Critical patent/WO2020237831A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers

Definitions

  • the present invention relates to the field of flat display technology, in particular, a CF cover plate, a preparation method thereof and a display panel thereof.
  • OLED Organic Light Emitting Diode
  • OLED organic light-emitting diode
  • WOLED white organic light-emitting diode
  • CF Color Film cover
  • Light color conversion method-blue light emitting layer plus light color conversion layer is expected to realize high-pixel and large-size displays, and therefore, has attracted more attention in the industry.
  • WOLEDs have a relatively high aperture ratio compared with other top-emitting display devices, the light extraction rate and viewing angle of such devices are not ideal. Therefore, in order to achieve full-color display, it is necessary to use a color film (CF) to filter the white light emitted by the OLED.
  • CF color film
  • the design of color film in OLED generally refers to the color film structure of LCD, and the color film layer involved in LCD is generally formed on the package cover, generally including a black matrix (Black matrix).
  • Matrix, BM Matrix, BM
  • RGB three-color color resist
  • the BM layer is set at both ends of each R/G/B color resist to shield light to solve the problem of light leakage between the color resists in the CF cover.
  • the black matrix is arranged between the three color resistors, although the lateral light can be absorbed, the problem of light leakage caused by its crosstalk to the adjacent color resistors is solved; but at the same time, this part of the lateral light will also be affected by the black matrix At least part of the light is absorbed, and thus, light loss is caused, and the actual light output rate of the OLED is reduced.
  • One aspect of the present invention is to provide a CF cover plate, which adopts a new type of structural arrangement, so that it can reduce the absorption of lateral incident light, but can reuse it, thereby effectively improving the light output of the display panel where it is located. rate.
  • a CF cover plate includes a substrate layer (Substrate). Wherein, light-shielding layers are arranged on the substrate layer at intervals, and a color filter is arranged between the light-shielding layers. Wherein, a bank layer is further provided on the light-shielding layer, and a metal layer is provided on the light-shielding layer or the side surface of the bank layer facing the color resist layer.
  • the dam layer may also be a part of the light shielding layer provided below it.
  • the dam layer may be a part of the existing light shielding layer that protrudes from the color resist layer provided on one side thereof.
  • the light-shielding layer in the prior art is now protruded from the part of the color resist layer, and the description is listed separately.
  • the metal reflective layer is provided on the side surface of the color resist layer disposed toward the side of the light shielding layer, which means that the embankment layer is protruding from the light shielding layer. The part of the color resist layer on its side.
  • the substrate layer includes a glass substrate layer or a flexible substrate layer.
  • the light shielding layer has a small contact angle and a certain degree of hydrophilicity.
  • the contact angle is less than 90 degrees, and the specific angle can be determined as needed and is not limited.
  • the material used for the light shielding layer is a black organic resin material or a black inorganic material.
  • the black organic resin material is used, the light shielding layer is the BM layer.
  • the black inorganic material includes metal oxides or sulfides, etc., specifically: copper oxide, iron oxide, manganese dioxide, ferroferric oxide, molybdenum sulfide, copper sulfide, etc., which are determined as required and are not limited.
  • the thickness of the light shielding layer ranges from 100 nm to 5 um.
  • the contact angle of the dam layer is relatively large and has a certain degree of hydrophobicity.
  • the contact angle is greater than 90 degrees, and the specific angle can be determined as needed and is not limited.
  • the height of the dam layer ranges from 1 to 10um.
  • the material used for the dam layer is an organic resin material containing F element.
  • it may be various organic resin materials known in the industry, which may be specifically determined as needed, and is not limited.
  • the material used in the color resist layer is an organic color resist material formed by dispersing a dye in an organic monomer, or a quantum dot material corresponding to R/G/B is dispersed in an organic Quantum dot ink material formed in a solvent; preferably R/G/B quantum dot ink.
  • the material used for the metal layer is a metal or alloy or metal oxide with reflective properties, preferably aluminum, silver, magnesium, etc.
  • the reflectivity of the metal layer to incident light is greater than 80%.
  • the thickness of the metal layer ranges from 100 to 2000 nm.
  • the covering of the metal layer on the light-shielding layer or the side surface of the dam layer facing the groove may be a full coverage of its entire surface, or it may be The partial coverage of the entire surface can be specifically determined as needed and is not limited.
  • a passivation layer is further provided on the surface of the CF cover plate.
  • the passivation layer is a kind of protective layer, whose main function is to avoid the influence of trace outgas produced by the organic materials involved in the preparation of the CF cover plate on the OLED device, and in addition, it can also isolate CF and OLED. The contact between the organic filling materials (Filler) in the package, thereby increasing the service life of the device.
  • the passivation layer may be a single-layer structure or a stacked-layer structure, which may be specifically determined as required and is not limited.
  • the passivation layer when it adopts a single-layer structure, it may be composed of dense inorganic substances. Specifically, it may be silicon oxide or nitride, or aluminum oxide, etc., and prepared by CVD, ALD, or Sputter. Further, the thickness of the passivation layer of the single-layer structure ranges from 500 to 2000 nm.
  • the passivation layer when it adopts a laminated structure, it may be formed by sequentially superimposing an inorganic film layer and an organic film layer.
  • the organic film layer is a buffer layer, and the material used can be transparent organic polymer resin or SiOC, etc.; the thickness of the organic film layer is 1-20 um, and it can be prepared by IJP or PECVD.
  • Another aspect of the present invention is to provide a method for preparing the CF cover plate of the present invention, which includes the following steps:
  • Step S1 Provide a substrate on which the light shielding layers are formed at intervals, wherein grooves are formed between adjacent light shielding layers;
  • Step S2 forming the dam layer on the shading layer
  • Step S3 forming the color resist layer in the groove
  • Step S4 forming the metal layer on the side surface of the light shielding layer or the dam layer facing the groove.
  • the step S1 further includes performing hydrophilic treatment on the surface of the substrate.
  • the specific treatment method may be irradiating UV or Plasma for a certain period of time, or using a solvent to modify the surface of the substrate so that it has a hydrophilic effect.
  • the specific method may be determined as needed and is not limited.
  • the light shielding layer in the step S1, can be formed in different embodiments due to different constituent materials. For example, if it uses black organic resin material, you can use Slit Coating, Screen printing, Spin coating, ink-jet printing, or tape-casting and other organic film-forming technologies, and then through exposure and development processes to form a patterned light-shielding layer; if it is in the form of inorganic thin films, Sputter, thermal Evaporation, CVD, PVD and other methods; wherein the specific preparation method of the light-shielding layer can be determined as needed and is not limited.
  • the material used for the dam layer is an organic resin material containing the F element.
  • the material used for the dam layer is an organic resin material containing the F element.
  • Slit coating, Screen printing, Spin All organic film formation methods such as coating or casting film formation are prepared, and then the patterned dam layer is formed through processes such as exposure and development.
  • the specific preparation method used can be determined as required and is not limited.
  • the preparation method adopted can be Slit coating, Screen printing, Spin All organic film formation methods such as coating or casting film formation, and then through exposure and development processes to form patterned R/G/B Color resist; or use inkjet printing to form a patterned R/G/B color resist; wherein the specific preparation method of the color resist layer can be determined as needed and is not limited.
  • the metal layer in the step S4, may be prepared by thermal evaporation or Sputter, and then patterned by means of fine mask or etching; the specific preparation adopted The method can be determined as needed and is not limited.
  • step S5 is to form a passivation layer on the surface of the CF cover plate.
  • the passivation layer is a protective layer whose main function is to prevent the trace outgas generated by the organic materials in the above process from causing harmful effects on the OLED devices underneath after the display panel is assembled.
  • the contact between the CF cover plate and the organic filling material (Filler) in the OLED package can be isolated, thereby improving the life of the device.
  • the passivation layer may be a single-layer structure or a laminated structure.
  • the material used can be a dense inorganic material, specifically silicon oxide or nitride, or aluminum oxide, etc., and is prepared by CVD, ALD, or Sputter.
  • the thickness of the single layer is 500 ⁇ 2000nm.
  • it adopts a laminated structure it can be formed by sequentially superimposing an inorganic film layer and an organic film layer; wherein the organic film layer is a buffer layer, which can be made of transparent organic polymer resin or SiOC;
  • the thickness of the film is 1-20um, and it can be prepared by IJP or PECVD.
  • another aspect of the present invention is to provide a display panel, which includes the CF cover plate of the present invention.
  • the display panel may be an OLED display panel, but is not limited.
  • the present invention relates to a CF cover sheet, which introduces a dam layer on the light-shielding layer, and through the combination of the two structures, the printing ink of the R/G/B color resist layer is limited to a specific area during its preparation. It is necessary to use the usual PS support column structure, thereby simplifying the preparation process.
  • a reflective metal layer is provided on the side surface facing the color resist layer, so that when the CF cover plate of the present invention is in use, the light on the side of the light shielding layer or the side of the dam layer can be emitted by the OLED device below it.
  • the metal layer instead of being absorbed as in the prior art, the lateral light can be emitted from the front side of the color resist layer again after being reflected, thereby avoiding light loss and effectively improving the light extraction rate of the OLED.
  • FIG. 1 is a method for preparing a CF cover plate provided in an embodiment of the present invention, and a schematic diagram of the structure after step S1 is completed;
  • step S2 is completed;
  • FIG. 3 is a schematic diagram of the structure of the CF cover plate manufacturing method described in FIG. 1 after step S3 is completed;
  • step S4 is completed;
  • FIG. 5 is a schematic diagram of the structure of the CF cover plate manufacturing method described in FIG. 1 after step S5 is completed;
  • FIG. 6 is a schematic structural diagram of a CF cover plate provided by another embodiment of the present invention.
  • FIG. 7 is a schematic diagram of the optical path of a CF cover provided by an embodiment of the present invention during operation.
  • the present invention relates to the structure of a CF cover plate and at the same time to its preparation method, in order to avoid unnecessary repetition, the structure of the CF cover plate involved in the present invention will be described below in conjunction with the preparation method. .
  • One embodiment of the present invention provides a method for preparing a CF cover plate related to the present invention, which includes the following steps:
  • Step S1 Provide a glass substrate 101, apply UV treatment to the glass substrate 101 to form a hydrophilic surface, and then deposit 2 ⁇ 3um thick copper sulfide as a light-shielding layer on the glass substrate 101 by a Sputter process 102.
  • a Sputter process 102 For the completed structural diagram, please refer to Figure 1;
  • Step S2 Slit coating process is used to coat the F-containing organic photoresist material on the light-shielding layer 102, and a 2 ⁇ 5um bank layer 103 structure with a hydrophobic surface is obtained after exposure and development processes, wherein the bank A groove structure 110 is formed between the layer 103 and the light-shielding layer underneath, and the completed structure diagram is shown in FIG. 2;
  • Step S3 drop the ink material for preparing the quantum dot R/G/B color resist layer into the groove 110 by the IJP process, and form each R/G/B color resist with good uniformity through the vacuum evaporation and heating process Layer 104, the structure diagram after completion, please refer to Figure 3;
  • Step S4 a reflective metal layer 105 is prepared on the bank 103, which is formed by thermal evaporation combined with fine mask technology to form 200nm metallic silver as the reflective metal layer.
  • a reflective metal layer 105 is prepared on the bank 103, which is formed by thermal evaporation combined with fine mask technology to form 200nm metallic silver as the reflective metal layer.
  • Step S5 using PECVD method to form a 500-800nm SiN passivation layer on the surface of the cover plate as the protective layer of the CF cover plate, wherein the completed structure diagram is shown in Figure 5; so far, as shown in Figure 5
  • the structure of is also a complete structure of a CF cover provided by an embodiment of the present invention.
  • the dam layer and the shading layer are combined into an integral structure composed of the same material, that is, the original position of the dam layer is replaced by the protrusion 111 of the shading layer 102, wherein The reflective metal layer 105 is disposed on the surface of the protrusion 111.
  • the reflective metal layer 105 does not need to completely cover the surface of the dam layer 103, but only needs to be provided on the side surface facing the color resist layer 104. Realize the creative idea of the present invention.
  • FIG. 7 illustrates the light path diagram when the CF cover plate involved in the present invention is applied to a display panel.
  • the display panel is an OLED display panel as an example, but not limited to.
  • the light generated by the OLED device 100 of the display panel where it is located is incident on the CF cover plate, wherein, as shown by the arrow in the figure, the light emitted in the forward direction will directly pass through the color resist layer 103
  • the CF cover plate is emitted; and the laterally emitted light, after being reflected by the metal layer 105 provided on the side of the dam layer 104, can be reused, and also from the color resist layer 103
  • the CF cover plate is emitted, so that the side incident light that was originally at least partially absorbed by the side light shielding layer in the prior art can be reused, thereby effectively improving the light output of the OLED device 100 rate.
  • the present invention relates to a CF cover sheet, which introduces a dam layer on the light-shielding layer, and through the combination of the two structures, the printing ink of the R/G/B color resist layer is limited to a specific area during its preparation. It is necessary to use the usual PS support column structure, thereby simplifying the preparation process.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Optical Filters (AREA)

Abstract

本发明提供了一种CF盖板，包括基板层（Substrate）。其中所述基板层上间隔设置遮光层，所述遮光层之间设有色阻层（color filter）。其中所述遮光层上还设置有堤坝层（Bank），其中所述遮光层或是所述堤坝层朝向所述色阻层的侧部表面上设置有金属层。本发明提供了一种CF盖板，其采用新型的结构设置，使其能够减少对侧向入射光的吸收，反而能对其再利用，从而能够有效的提升其所在显示面板的出光率。

Description

一种CF盖板、其制备方法及其显示面板 技术领域
本发明涉及平面显示技术领域，尤其是，其中的一种CF盖板、其制备方法及其显示面板。
 背景技术
已知，有机发光器件OLED(Organic Light Emitting Diode)，以其良好的自发光特性、高的对比度、快速响应以及柔性显示等优势，现已在业界得到了广泛的应用。
其中所述OLED实现全彩的方式一般有以下几种：a、采用红、绿及蓝三种有机发光材料直接发光；b、白色有机发光器件WOLED（white organic light - emitting diode, WOLED）+彩膜盖板（Colour filter，CF）；以及c、光色转换法-蓝色发光层加光色转换层。其中由于方式b能够有望实现高像素以及大尺寸显示器，因此，受到业界较多的关注。
但是，虽然WOLED和其他顶发射显示器件相比具有相对较高的开口率，但是这类装置的出光率和可视角度并不理想。因此，为了实现全彩显示，需要使用彩膜（CF）对OLED所发出的白光进行滤光。
目前OLED中彩膜的设计一般是参照LCD的彩膜结构，而LCD中涉及的彩膜层一般是形成于封装盖板上，一般包括黑矩阵(Black Matrix，BM)、RGB三色色阻以及平坦层(Overcoat)。其中的BM层是设置在每一R/G/B色阻的两端处进行遮光，以解决CF盖板中各色色阻间的漏光问题。
但是，三色色阻间设置了黑矩阵之后，虽然可以将侧向光吸收，解决了其串扰至相邻色阻中造成漏光的问题；但同时，这部分侧向光也会被所述黑矩阵吸收其中的至少一部分光，如此，也就造成了光损失，导致OLED实际出光率降低。
因此，确有必要开发一种新型的CF盖板，来克服现有技术中的缺陷。
 技术问题
本发明的一个方面是提供一种CF盖板，其采用新型的结构设置，使其能够减少对侧向入射光的吸收，反而能对其再利用，从而能够有效的提升其所在显示面板的出光率。
 技术解决方案
本发明采用的技术方案如下：
一种CF盖板，包括基板层（Substrate）。其中所述基板层上间隔设置遮光层，所述遮光层之间设有色阻层（color filter）。其中所述遮光层上还设置有堤坝层（Bank），其中所述遮光层或是所述堤坝层朝向所述色阻层的侧部表面上设置有金属层。
进一步的，在不同实施方式中，其中所述堤坝层也可以是其下方设置的所述遮光层的一部分。也就是说，所述堤坝层可以为现有的遮光层中凸出于其一侧设置的色阻层的部分。而在本发明中，为了尽可能的不限制本发明的创作构思，现将现有技术中的遮光层凸出于色阻层的部分，单独列出描述。如此，根据本发明的创作构思，所述遮光层朝向其侧部设置的色阻层的侧表面上，设置所述金属反射层，即是指所述堤坝层即是所述遮光层凸出于其侧部所述色阻层的部分。
进一步的，在不同实施方式中，其中所述基板层包括玻璃基板层或者柔性衬底层。
进一步的，在不同实施方式中，其中所述遮光层接触角较小，有一定的亲水性。例如，其接触角角度为小于90度，具体角度可随需要而定，并无限定。
进一步的，在不同实施方式中，其中所述遮光层采用的材料为黑色有机树脂材料或者黑色无机材料。其中采用所述黑色有机树脂材料时，所述遮光层即为BM层。所述黑色无机材料包括金属氧化物或者硫化物等，具体可以是：氧化铜、氧化铁、二氧化锰、四氧化三铁、硫化钼、硫化铜等等，随需要而定，并无限定。
进一步的，在不同实施方式中，其中所述遮光层的厚度范围为100nm~5um。
进一步的，在不同实施方式中，其中所述堤坝层的接触角较大，有一定的疏水性。例如，其接触角角度为大于90度，具体角度可随需要而定，并无限定。
进一步的，在不同实施方式中，其中所述堤坝层的高度范围为1~10um。
进一步的，在不同实施方式中，其中所述堤坝层采用的材料为含有F元素的有机树脂材料。具体可以是业界已知的各种有机树脂材料，具体可随需要而定，并无限定。
进一步的，在不同实施方式中，其中所述色阻层采用的材料为将染料分散在有机单体中形成的有机色阻材料，或者是将R/G/B对应的量子点材料分散在有机溶剂中形成的量子点墨水材料；优选为R/G/B量子点墨水。
进一步的，在不同实施方式中，其中所述金属层采用的材料是具有反射特性的金属或者合金或者金属氧化物等，优选铝、银、镁等等。
进一步的，在不同实施方式中，其中所述金属层的对于入射光的反射率大于80%。
进一步的，在不同实施方式中，其中所述金属层的厚度范围为100~2000 nm。
进一步的，在不同实施方式中，其中所述金属层于所述遮光层或是所述堤坝层朝向所述凹槽的侧表面上的覆盖，可以是对其整体表面的全面覆盖，也可以是对其整体表面的局部覆盖，具体可随需要而定，并无限定。
进一步的，在不同实施方式中，其中所述CF盖板的表面上还设置有钝化层（Passivation）。其中所述钝化层即为一种保护层，主要作用是避免所述CF盖板制备过程中涉及使用的有机材料产生的微量outgas对OLED器件的影响，除此之外还可以隔绝CF与OLED封装中的有机填充材料（Filler）间的接触，从而提高器件的使用寿命。
进一步的，在不同实施方式中，其中所述钝化层可以是单层结构，也可以是叠层结构，具体可随需要而定，并无限定。
其中，当所述钝化层采用单层结构时，其可以是采用致密的无机物构成。具体可以是硅的氧化物或者氮化物，或者铝的氧化物等，并通过CVD或者ALD或者Sputter制备而成。进一步的，其中所述单层结构的钝化层厚度范围为500~2000 nm。
其中，当所述钝化层采用叠层结构时，其可以是采用无机膜层-有机膜层相互依次叠加而成。其中的所述有机膜层为缓冲层，其采用的材料可以是透明有机聚合物树脂或者SiOC等；所述有机膜层的厚度在1~20um，可以采用IJP或者PECVD等方式制备而成。
进一步的，本发明的又一方面是提供一种本发明涉及的所述CF盖板的制备方法，其包括以下步骤：
步骤S1、提供一基板，于所述基板上形成间隔设置的所述遮光层，其中所述相邻遮光层之间形成有凹槽；
步骤S2、于所述遮光层上形成所述堤坝层；
步骤S3、于所述凹槽内形成所述色阻层；以及
步骤S4、于所述遮光层或是所述堤坝层朝向所述凹槽的侧表面上形成所述金属层。
进一步的，在不同实施方式中，在所述步骤S1中，还包括对所述基板的表面进行亲水处理。其中具体的处理方式可以是照射一定时间的UV或者Plasma，或者采用溶剂对基板表面进行改性，以使其具有亲水作用，具体方式可随需要而定，并无限定。
进一步的，在不同实施方式中，在所述步骤S1中，其中所述遮光层由于采用的构成材料不同，使得其可以采用不同的实施方式形成。例如，若是其采用黑色有机树脂材料，则可以采用Slit coating、Screen printing、Spin coating、喷墨打印或者流延成膜等一切有机物成膜技术，然后再经过曝光显影等制程形成图案化的遮光层；若其采用无机薄膜形式，则可采用Sputter、热蒸镀、CVD以及PVD等方式；其中所述遮光层的具体制备方式可随需要而定，并无限定。
进一步的，在不同实施方式中，在所述步骤S2中，其中所述堤坝层采用的材料为含有F元素的有机树脂材料，具体可以采用Slit coating，Screen printing，Spin coating或者流延成膜等一切有机物成膜方式制备，然后再经过曝光显影等制程形成图案化的所述堤坝层，其具体采用的制备方式可随需要而定，并无限定。
进一步的，在不同实施方式中，在所述步骤S3中，其中所述色阻层包括R/G/B三色色阻层，其采用的制备方式可以是Slit coating、Screen printing、Spin coating或者流延成膜等一切有机物成膜方式，然后再经过曝光显影等制程形成图案化的R/G/B 色阻；或者是采用喷墨打印的方式形成图案化的R/G/B 色阻；其中所述色阻层的具体制备方式可随需要而定，并无限定。
进一步的，在不同实施方式中，在所述步骤S4中，其中所述金属层可采用热蒸镀或者Sputter等方式制备，然后采用精细掩模版或者蚀刻的方式进行图案化；其具体采用的制备方式可随需要而定，并无限定。
进一步的，在不同实施方式中，其还包括步骤S5，其为在所述CF盖板的表面形成钝化层。其中所述钝化层为一层保护层，主要作用是避免上述制程中有机材料产生的微量溢出气体（outgas）对组装成显示面板后，其下方的OLED器件造成有害影响，除此之外还可以隔绝所述CF盖板与OLED封装中的有机填充材料（Filler）间的接触，从而提高器件寿命。
进一步的，其中所述钝化层可以为单层结构或者叠层结构。当其采用单层结构时，其采用的材料可以是致密的无机物材料，具体可以是硅的氧化物或者氮化物，或者铝的氧化物等，并通过CVD或者ALD或者Sputter制备而成，其单层膜厚为500~2000nm。当其采用叠层结构时，其可以为无机膜层-有机膜层相互依次叠加形成；其中所述有机膜层为缓冲层，可以是由透明有机聚合物树脂或者SiOC等材料构成；所述有机膜层厚度1~20um，可以采用IJP或者PECVD等方式制备而成。
进一步的，本发明的又一方面是提供一种显示面板，其包括本发明涉及的所述CF盖板。其中所述显示面板可以是OLED显示面板，但不限于。
 有益效果
本发明涉及的一种CF盖板，其通过在所述遮光层上引入堤坝层，通过两者结构结合将其制备时R/G/B色阻层的打印墨水限制在特定区域，如此，可不需要在使用通常的PS支撑柱结构，从而简化了其制备工艺。
进一步的，在朝向色阻层的侧表面上设置反射金属层，使得本发明涉及的所述CF盖板在使用时，其下方OLED器件射向其遮光层或是堤坝层侧部上的光能够被所述金属层反射，而非如现有技术中的吸收，侧向光在反射后能再次从其色阻层正面射出，从而避免了光损失，进而有效的提高了OLED的出光率。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明的一个实施方式中提供的一种CF盖板的制备方法，其步骤S1完成后的结构示意图；
图2为图1所述的CF盖板制备方法，其步骤S2完成后的结构示意图；
图3为图1所述的CF盖板制备方法，其步骤S3完成后的结构示意图；
图4为图1所述的CF盖板制备方法，其步骤S4完成后的结构示意图；
图5为图1所述的CF盖板制备方法，其步骤S5完成后的结构示意图；
图6为本发明的又一实施方式提供的一种CF盖板的结构示意图；
图7为本发明实施方式提供的一种CF盖板，其工作时的光路示意图。
 本发明的实施方式
以下将结合附图和实施例，对本发明涉及的一种CF盖板、其制备方法及其显示面板的技术方案作进一步的详细描述。
其中，由于本发明即涉及一种CF盖板的结构，同时又涉及其制备方法，为避免不必要的赘述，以下将结合所述制备方法，对本发明涉及的所述CF盖板的结构进行描述。
本发明的一个实施方式提供了一种制备本发明涉及的一种CF盖板的制备方法，其包括以下步骤：
步骤S1、提供一玻璃基板101，对所述玻璃基板101进行UV处理使其形成亲水性表面，然后再通过Sputter工艺在所述玻璃基板101上间隔沉积2~3um厚的硫化铜作为遮光层102，其中完成后的结构图示，请参阅图1所示；
步骤S2、在所述遮光层102上以Slit coating工艺涂布含F的有机光阻材料，经过曝光显影等制程得到2~5um具有疏水性表面的堤坝层（Bank）103结构，其中所述堤坝层103及其下的遮光层之间形成有凹槽结构110，其中完成后的结构图示，请参阅图2所示；
步骤S3、以IJP工艺向所述凹槽110内滴加制备量子点R/G/B 色阻层的墨水材料，经过减压蒸发以及加热制程形成均一性良好的各R/G/B 色阻层104，其中完成后的结构图示，请参阅图3所示；
步骤S4、在所述堤坝层（Bank）103上制备反射金属层105，其为采用热蒸镀结合精细掩模版工艺技术形成200nm金属银作为反射金属层，其中完成后的结构图示，请参阅图4所示；
步骤S5、采用 PECVD方式在盖板表面形成500~800nm的SiN钝化层作为所述CF盖板的保护层，其中完成后的结构图示，请参阅图5所示；至此，图5所示的结构也为本发明涉及的一实施方式提供的一种CF盖板的完整结构。
进一步的，在本发明涉及的又一实施方式中，其提供了又一种本发明涉及的CF盖板结构，其采用了一种新型的所述堤坝层和所述遮光层间的结构设置，具体请参阅图6所示。
其中如图6中所示，所述堤坝层与所述遮光层结合为同一材料构成的一体结构，即原所述堤坝层的位置处由所述遮光层102的凸出部111所代替，其中所述反射金属层105设置在所述凸出部111的表面上。
进一步的，在其他不同实施方式中，其中所述反射金属层105的设置方式并不需要完全覆盖所述堤坝层103的表面，只需设置在其朝向色阻层104的侧部表面上即可实现本发明的创作构思。
使用时，请参看图7所示，其图示了本发明涉及的所述CF盖板应用到显示面板中工作时的光路图。其中，所述显示面板以OLED显示面板为例，但不限于。如图7中所示，其所在显示面板的OLED器件100发光产生的光向所述CF盖板入射，其中，如图中箭头所示，正向射出的光会直接通过所述色阻层103射出所述CF盖板；而侧向射出的光，在经过设置在所述堤坝层104侧面上的所述金属层105的反射后，还能再被利用同样也会从所述色阻层103射出所述CF盖板，如此，使得原本如现有技术中被至少部分被侧部遮光层所吸收的侧向入射光，能够再次的被利用，从而有效的提高了所述OLED器件100的出光率。
本发明涉及的一种CF盖板，其通过在所述遮光层上引入堤坝层，通过两者结构结合将其制备时R/G/B色阻层的打印墨水限制在特定区域，如此，可不需要在使用通常的PS支撑柱结构，从而简化了其制备工艺。
本发明的技术范围不仅仅局限于上述说明中的内容，本领域技术人员可以在不脱离本发明技术思想的前提下，对上述实施例进行多种变形和修改，而这些变形和修改均应当属于本发明的范围内。

Claims (10)

  1. 一种CF盖板，包括基板层，其中所述基板层上间隔设置遮光层，所述遮光层之间设有色阻层，其中所述遮光层上还设置有堤坝层；
    其中所述遮光层或是所述堤坝层朝向所述色阻层的侧部表面上设置有金属层。
  2. 根据权利要求1所述的CF盖板，其中所述金属层的对于入射光的反射率大于80%。
  3. 根据权利要求1所述的CF盖板，其中所述金属层的厚度范围为100 ~ 2000 nm。
  4. 根据权利要求1所述的CF盖板，其中所述堤坝层是其下方设置的所述遮光层的一部分。
  5. 根据权利要求1所述的CF盖板，其中所述遮光层的厚度范围为100nm ~ 5um。
  6. 根据权利要求1所述的CF盖板，其中所述堤坝层的高度范围为1~ 10um。
  7. 根据权利要求1所述的CF盖板，其中所述堤坝层采用的材料为含有F元素的有机树脂材料。
  8. 一种制备根据权利要求1所述CF盖板的制备方法，其包括以下步骤：
    步骤S1、提供一基板，于所述基板上形成间隔设置的所述遮光层，其中所述相邻遮光层之间形成有凹槽；
    步骤S2、于所述遮光层上形成所述堤坝层；
    步骤S3、于所述凹槽内形成所述色阻层；以及
    步骤S4、于所述遮光层或是所述堤坝层朝向所述凹槽的侧表面上形成所述金属层。
  9. 根据权利要求8所述的制备方法，其中在所述步骤S1中，其还包括对所述基板的表面进行亲水处理。
  10. 一种显示面板，其包括根据权利要求1所述的CF盖板。
PCT/CN2019/099593 2019-05-30 2019-08-07 一种cf盖板、其制备方法及其显示面板 WO2020237831A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/615,699 US20210408126A1 (en) 2019-05-30 2019-08-07 Color filter cover plate, preparation method thereof, and display panel

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910461131.2 2019-05-30
CN201910461131.2A CN110211997A (zh) 2019-05-30 2019-05-30 一种cf盖板、其制备方法及其显示面板

Publications (1)

Publication Number Publication Date
WO2020237831A1 true WO2020237831A1 (zh) 2020-12-03

Family

ID=67789589

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/099593 WO2020237831A1 (zh) 2019-05-30 2019-08-07 一种cf盖板、其制备方法及其显示面板

Country Status (3)

Country Link
US (1) US20210408126A1 (zh)
CN (1) CN110211997A (zh)
WO (1) WO2020237831A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110620136B (zh) 2019-10-30 2022-07-19 京东方科技集团股份有限公司 显示基板及包含其的显示面板
CN110854168B (zh) * 2019-10-31 2022-02-01 深圳市华星光电半导体显示技术有限公司 一种阵列基板、显示面板及阵列基板的制作方法
CN111276632B (zh) * 2020-02-19 2021-03-16 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法
US11393881B2 (en) 2020-03-26 2022-07-19 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display device and manufacturing method thereof
CN111443517A (zh) * 2020-03-26 2020-07-24 武汉华星光电半导体显示技术有限公司 显示器件及其制作方法
CN111584563B (zh) * 2020-05-08 2023-05-09 武汉华星光电半导体显示技术有限公司 一种oled显示面板及显示装置
KR20220022011A (ko) * 2020-08-14 2022-02-23 삼성디스플레이 주식회사 표시 장치 및 그 제조방법
CN112993192A (zh) * 2021-02-08 2021-06-18 京东方科技集团股份有限公司 一种封装盖板及其制备方法、显示面板和显示装置
CN114740560B (zh) * 2022-04-27 2024-05-10 深圳市华星光电半导体显示技术有限公司 彩膜基板及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1429051A (zh) * 2001-12-18 2003-07-09 精工爱普生株式会社 显示装置以及电子仪器
KR20150121402A (ko) * 2014-04-21 2015-10-29 엘지디스플레이 주식회사 터치 스크린 패널 및 터치 스크린 패널 제조 방법
CN107731873A (zh) * 2017-10-12 2018-02-23 深圳市华星光电半导体显示技术有限公司 彩膜基板及其制作方法以及oled显示器件
CN108172600A (zh) * 2017-12-29 2018-06-15 深圳市华星光电半导体显示技术有限公司 用于woled显示器的彩膜基板及woled显示器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014175681A1 (en) * 2013-04-24 2014-10-30 LG Display Co.,Ltd. Organic light-emitting display apparatus and method for manufacturing the same
WO2015083823A1 (ja) * 2013-12-06 2015-06-11 シャープ株式会社 発光体基板、太陽電池、表示装置、照明装置、電子機器、有機ｅｌ素子、及び発光体基板の製造方法
KR20180120301A (ko) * 2017-04-26 2018-11-06 삼성디스플레이 주식회사 색변환 표시판 및 이를 포함하는 표시 장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1429051A (zh) * 2001-12-18 2003-07-09 精工爱普生株式会社 显示装置以及电子仪器
KR20150121402A (ko) * 2014-04-21 2015-10-29 엘지디스플레이 주식회사 터치 스크린 패널 및 터치 스크린 패널 제조 방법
CN107731873A (zh) * 2017-10-12 2018-02-23 深圳市华星光电半导体显示技术有限公司 彩膜基板及其制作方法以及oled显示器件
CN108172600A (zh) * 2017-12-29 2018-06-15 深圳市华星光电半导体显示技术有限公司 用于woled显示器的彩膜基板及woled显示器

Also Published As

Publication number Publication date
CN110211997A (zh) 2019-09-06
US20210408126A1 (en) 2021-12-30

Similar Documents

Publication Publication Date Title
WO2020237831A1 (zh) 一种cf盖板、其制备方法及其显示面板
JP6987228B2 (ja) 有機発光ダイオード表示装置及びその製造方法
US10665641B2 (en) Color filter (CF) substrate, manufacturing method thereof, display panel and display device
WO2019071752A1 (zh) 彩膜基板及其制作方法以及oled显示器件
CN111505866A (zh) 显示装置及其制作方法
WO2010150353A1 (ja) フラットパネルディスプレイ、その製造中間体および製造方法
US20200295103A1 (en) Pixel defining structure and fabricating method thereof, display panel and display device
US20160013254A1 (en) Display device and manufacturing method of display device
WO2020238397A1 (zh) 显示面板及其制造方法、显示装置
WO2019140753A1 (zh) 彩色滤光基板及其制作方法
WO2022083304A1 (zh) 显示面板及其制备方法、显示装置
WO2023071914A1 (zh) 微显示器及其制作方法
JP2013058447A (ja) 有機ｅｌ発光装置
WO2020087777A1 (zh) 一种显示面板及其显示器件
US8748924B2 (en) Display apparatus and method for manufacturing the same
JP4411006B2 (ja) カラーフィルタ及び有機ｅｌ表示素子の製造方法
US10503064B2 (en) Method for manufacturing color filter substrate
CN111463364B (zh) 有机发光二极管显示基板及制备方法、显示面板
CN110707144A (zh) 一种显示面板和显示装置
WO2022151628A1 (zh) Oled显示面板
WO2021077500A1 (zh) 有机发光显示面板及其制作方法、有机发光显示装置
WO2020124717A1 (zh) 用于制造有机发光显示装置的封装结构的方法
JP4272900B2 (ja) 有機ｅｌ素子のバリア層の形成方法および有機ｅｌ素子の製造方法
WO2023015719A1 (zh) 一种显示屏膜层结构、移动终端及膜层结构的制造方法
WO2023065800A1 (zh) 一种显示面板及显示装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19931380

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19931380

Country of ref document: EP

Kind code of ref document: A1