WO2020228148A1 - Oled面板及其制造方法 - Google Patents

Oled面板及其制造方法 Download PDF

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Publication number
WO2020228148A1
WO2020228148A1 PCT/CN2019/099240 CN2019099240W WO2020228148A1 WO 2020228148 A1 WO2020228148 A1 WO 2020228148A1 CN 2019099240 W CN2019099240 W CN 2019099240W WO 2020228148 A1 WO2020228148 A1 WO 2020228148A1
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WIPO (PCT)
Prior art keywords
color
light
layer
film layer
emitting
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PCT/CN2019/099240
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English (en)
French (fr)
Inventor
龚文亮
鲜于文旭
Original Assignee
武汉华星光电半导体显示技术有限公司
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Priority to US16/641,251 priority Critical patent/US11217633B2/en
Publication of WO2020228148A1 publication Critical patent/WO2020228148A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Definitions

  • This application relates to the field of display technology, in particular to an OLED panel and a manufacturing method thereof.
  • the functional components in the display device need to be simplified. Therefore, in the prior art, a color film layer is used to replace the polarizer, and the reflection of external light is realized based on the black matrix of the color film layer.
  • the OLED panel includes a color film layer 11, an encapsulation layer 12, a light-emitting element 13, and a base substrate 14.
  • the color film layer 11 includes a red photoresist R, a green photoresist G, a blue photoresist B, and a black matrix.
  • BM therefore, when the color film layer is formed on the OLED panel, 4 photolithography processes are required, which is complicated.
  • the color film layer of the existing OLED panel has the technical problem of complicated manufacturing process.
  • the present application provides an OLED panel and a manufacturing method thereof, so as to alleviate the technical problems of complicated manufacturing processes in the color film layer of the existing OLED panel.
  • An embodiment of the present application provides an OLED panel, and the OLED panel includes:
  • OLED light-emitting element located on the base substrate, the OLED light-emitting element including a first light-emitting color sub-pixel, a second light-emitting color sub-pixel, and a third light-emitting color sub-pixel;
  • the color filter layer includes a first color filter layer provided on the first light-emitting color sub-pixel, a second color filter layer provided on the second light-emitting color sub-pixel, and a The third color filter layer on the light-emitting color sub-pixels, and the reflective layer disposed between the first color filter layer, the second color filter layer, and the third color filter layer.
  • the material of the reflective layer is the same as that of the first color filter layer.
  • the material of a color film layer is the same.
  • the film material of the first color filter layer includes blue photoresist.
  • the film thickness of the reflective layer is greater than the film thickness of the first color filter layer.
  • the OLED panel is further provided with an encapsulation layer for encapsulating the OLED light-emitting element, and the encapsulation layer is located between the OLED light-emitting element and the color film layer.
  • the thickness of the color filter layer is less than 5 microns.
  • the light-emitting color of the first light-emitting color sub-pixel is the same as the color of the first film layer
  • the light-emitting color of the second light-emitting color sub-pixel is the same as that of the second film.
  • the colors of the layers are the same
  • the emission color of the third emission color sub-pixel is the same as the color of the third film layer.
  • the OLED panel further includes a planarization layer disposed on the color film layer.
  • the base substrate includes a glass substrate.
  • the material of the buffer layer includes silicon oxide or silicon nitride.
  • the thickness of the buffer layer is 5000 to 10000 angstroms.
  • the first light-emitting color sub-pixel, the second light-emitting color sub-pixel, and the third light-emitting color sub-pixel are one of three light-emitting color sub-pixels of red, green and blue.
  • the OLED panel further includes a fourth light-emitting color sub-pixel
  • the color film layer includes a fourth color film layer disposed on the fourth light-emitting color sub-pixel
  • the first color film The film layer materials of the second color film layer, the third color film layer, and the fourth color film layer are different.
  • An embodiment of the present application provides a manufacturing method of an OLED panel, and the manufacturing method includes:
  • the OLED light-emitting element including a first light-emitting color sub-pixel, a second light-emitting color sub-pixel, and a third light-emitting color sub-pixel;
  • a color filter layer is formed on the OLED light-emitting element, and the color filter layer includes a first color filter layer disposed on the first light-emitting color sub-pixel, and a second color film layer disposed on the second light-emitting color sub-pixel.
  • the material of the reflective layer is the same as the material of the first color filter layer.
  • the step of forming a color film layer on the OLED light-emitting element includes: in a photolithography process, using a blue photoresist to simultaneously form the first color film Layer and the reflective layer.
  • the step of forming a color film layer on the OLED light-emitting element includes: in a first photolithography process, using a blue photoresist to simultaneously form the first For the color film layer and the reflective layer, in the second photolithography process, red photoresist is used to form the second color film layer, and in the third photolithography process, green photoresist is used to form the third color film layer. ⁇ Film layer.
  • the step of forming a color film layer on the OLED light-emitting element includes: in a first photolithography process, a red photoresist is used to form the second color film. In the second photolithography process, blue photoresist is used to form the first color film layer and the reflective layer at the same time, and in the third photolithography process, green photoresist is used to form the third color film. ⁇ Film layer.
  • the step of forming a color film layer on the OLED light-emitting element includes: in a first photolithography process, a red photoresist is used to form the second color film. In the second photolithography process, a green photoresist is used to form the third color film layer, and in the third photolithography process, a blue photoresist is used to form the first color film layer and the Reflective layer.
  • the step of forming a color film layer on the OLED light-emitting element includes: in a photolithography process, using a semi-transparent mask to simultaneously form the first The color film layer and the reflective layer, the film thickness of the reflective layer is greater than the film thickness of the first color film layer.
  • the step of forming a color film layer on the OLED light-emitting element includes: in a first photolithography process, a red photoresist is used to form the second color film. In the second photolithography process, a green photoresist is used to form the third color film layer, and in the third photolithography process, a blue photoresist and a semi-transparent mask are used to form the first Color film layer and the reflective layer.
  • the method before the step of forming a color film layer on the OLED light-emitting element, the method further includes: forming an encapsulation layer on the OLED light-emitting element, and the encapsulation layer is used for packaging The OLED light-emitting element; at this time, the step of forming a color filter layer on the OLED light-emitting element includes: forming the color filter layer on the encapsulation layer.
  • the present application provides an OLED panel and a manufacturing method thereof.
  • the color film layer of the OLED panel includes a first color film layer disposed on a first light-emitting color sub-pixel, and a second color film disposed on a second light-emitting color sub-pixel Layer, a third color film layer arranged on the third light-emitting color sub-pixel, and a reflective layer arranged between the first color film layer, the second color film layer, and the third color film layer.
  • the material of a color film layer is the same; in this application, because the first color film layer and the reflective layer of the color film layer are made of the same material, the first color film layer and the fourth color film layer can be prepared simultaneously in the same photolithography process.
  • the color film layer which can simplify a photolithography process, alleviate the complicated technical problems of the color film layer of the existing OLED panel, and save the cost of masking materials and reduce the yellow light in the photolithography process. The impact of manufacturing process on OLED panels.
  • FIG. 1 is a schematic diagram of the structure of an existing OLED panel
  • FIG. 2 is a schematic diagram of the first structure of an OLED panel provided by an embodiment of the application.
  • FIG. 3 is a schematic diagram of a second structure of an OLED panel provided by an embodiment of the application.
  • the OLED panel provided by the embodiment of the present application includes:
  • the color film layer 23 includes a first color film layer 231 disposed on the first light-emitting color sub-pixel 221, a second color film layer 232 disposed on the second light-emitting color sub-pixel 222, and A third color filter layer 233 on the third light-emitting color sub-pixel 223, and a reflective layer 234 disposed between the first color filter layer 231, the second color filter layer 232, and the third color filter layer 233
  • the material of the reflective layer 234 is the same as the material of the first color filter layer 231.
  • the light reflectivity of the film material of the first color film layer 231 meets the preset requirements, which can meet the visual requirements of the human eye.
  • the light reflectivity of the film material of the first color film layer 231 to external light The reflectivity is lower than 5%, etc.
  • the color film layer of the OLED panel includes a first color film layer disposed on a first light-emitting color sub-pixel, a second color film layer disposed on a second light-emitting color sub-pixel, The third color filter layer arranged on the third light-emitting color sub-pixel, and the reflective layer provided between the first color filter layer, the second color filter layer, and the third color filter layer.
  • the material of the reflective layer is the same as the first color filter layer.
  • the material of the film layer is the same; in this application, because the first color film layer and the reflective layer of the color film layer have the same material, the first color film layer and the fourth color film can be prepared simultaneously in the same photolithography process In this way, a lithography process can be simplified, and the complicated technical problems of the color film layer of the existing OLED panel can be alleviated. At the same time, it saves the cost of mask consumables and reduces the yellow light process in the photolithography process. The impact of OLED panels.
  • the OLED panel includes red, green, and blue light-emitting color sub-pixels, and the first light-emitting color sub-pixel 221, the second light-emitting color sub-pixel 222, and the third light-emitting color sub-pixel 223 are red, green and blue.
  • the first light-emitting color sub-pixel 221, the second light-emitting color sub-pixel 222, and the third light-emitting color sub-pixel 223 are red, green and blue.
  • the OLED panel includes four light-emitting color sub-pixels of red, green, blue and white, and the first light-emitting color sub-pixel 221, the second light-emitting color sub-pixel 222, and the third light-emitting color sub-pixel 223 are three types of red, green, and blue.
  • the OLED panel further includes a fourth light-emitting color sub-pixel, the color film layer 23 includes a fourth color film layer disposed on the fourth light-emitting color sub-pixel, and the first color film layer 231 , The second color film layer 232, the third color film layer 2333, and the fourth color film layer have different film materials.
  • all sub-pixels of the OLED light-emitting element 22 emit light of the same color
  • the color film layer 23 performs light-emitting color conversion to obtain sub-pixels of various light-emitting colors of the OLED panel.
  • all sub-pixels of the OLED light-emitting element 22 emit white light
  • the color film layer passes through the first color film layer (material is blue photoresist), the second color film layer (material is red photoresist), and the third color film layer (material is red photoresist). Green photoresist) conversion to obtain sub-pixels of three luminous colors.
  • the film material of the first color filter layer 231 includes blue photoresist. This is because the main emission peak of the external light reflected by the blue photoresist is in the low-sensitivity area of the human visual function, so the reflectivity of the blue photoresist is low, which meets the preset requirements and can meet the visual requirements of the human eyes.
  • the first color film layer is prepared by blue photoresist, which reduces the material cost.
  • the thickness of the reflective layer 234 is greater than the thickness of the first color filter layer. In this embodiment, the thickness of the reflective layer is increased, which further reduces the reflectivity of the OLED panel in the shading area.
  • the OLED panel further includes a planarization layer 25 disposed on the color filter layer 23 to achieve planarization of the surface of the OLED panel.
  • the thickness of the color filter layer 23 is less than 5 microns.
  • the OLED panel is further provided with an encapsulation layer 24 for encapsulating the OLED light-emitting element, and the encapsulation layer 24 is located between the OLED light-emitting element 22 and the color film layer. Between 23.
  • the OLED panel is a bottom emission white light OLED panel
  • the color film layer is located between the base substrate and the OLED light emitting layer.
  • the bottom emission white light OLED panel is now further explained.
  • the bottom emission white light OLED panel provided by the embodiment of the present application includes a first light-emitting color sub-pixel, a second light-emitting color sub-pixel, and a third light-emitting color sub-pixel, which specifically includes:
  • the color filter layer covering the base substrate includes a first light-transmitting area corresponding to the light-emitting area of the first light-emitting color sub-pixel, and a second light-transmitting area corresponding to the light-emitting area of the second light-emitting color sub-pixel.
  • the light-shielding area is located in the first light-transmitting area, the second light-transmitting area, and the third light-transmitting area
  • the first color film layer located in the first light-transmitting area, the second color film layer located in the second light-transmitting area, and the film of the third color film layer located in the third light-transmitting area Different layer materials; the first color filter layer and the fourth color filter layer located in the shading area have the same film material, and the light reflectivity of the film material of the first color filter layer meets a preset requirement;
  • a semiconductor channel region provided on the buffer layer, and conductor layers respectively connected to both sides of the semiconductor channel region;
  • a source S and a drain D are provided on the interlayer insulating layer, the source S contacts the conductor layer through the source contact hole, and the drain D contacts the drain contact hole The conductor layer;
  • a passivation layer provided on the source electrode S, the drain electrode D, and the interlayer insulating layer, the passivation layer having a through hole exposing the pixel defining hole;
  • a white light OLED light emitting layer arranged in the pixel defining hole and taking the conductor layer as an anode;
  • the source S, the drain D, the gate, the gate insulating layer, the portion of the conductor layer in contact with the source S, the portion of the conductor layer in contact with the drain D, and the semiconductor channel region constitute Thin film transistor T; the semiconductor channel region and the conductor layers connected to both sides of the semiconductor channel region are obtained by plasma treatment of the entire surface of the oxide semiconductor layer, and the oxide semiconductor layer is not The resistance of the part shielded by the gate and the gate insulating layer is reduced to form a conductive layer, while the part shielded by the gate and the gate insulating layer is still a semiconductor, forming a semiconductor channel region.
  • the thin film transistor T and the color film layer are arranged on the same base substrate, and the white light emitted by the white light OLED light emitting layer is filtered by the color film layer for color display, without the need for a polarizer.
  • the production cost is low; the other conductor layer located in the same layer as the semiconductor channel region is used as the anode of the white light OLED, and there is no need to set a separate anode.
  • the shading layer, flat layer, and pixel definition layer are omitted. Defining the pixel area with the pixel defining hole in the interlayer insulating layer not only simplifies the structure, but also can further reduce the manufacturing cost.
  • the base substrate is preferably a glass substrate.
  • the material of the buffer layer is silicon oxide or silicon nitride, and the thickness is 5000 to 10000 angstroms (1 angstrom is equal to 0.1 nanometers).
  • the original material of the conductor layer and the semiconductor channel region is one of indium gallium zinc oxide, indium zinc tin oxide, and indium gallium zinc tin oxide, with a thickness of 400 to 1000 angstroms. .
  • the material of the gate insulating layer is silicon oxide or silicon nitride, and the thickness is 1000 to 3000 angstroms.
  • the material of the gate is one or a stacked combination of molybdenum, aluminum, copper, and titanium, and the thickness is 2000 to 8000 angstroms.
  • the material of the interlayer insulating layer is silicon oxide or silicon nitride, and the thickness is 2000 to 10000 angstroms.
  • the source electrode S and the drain electrode D are made of one or a combination of molybdenum, aluminum, copper, and titanium, and the thickness is 2000 to 8000 angstroms.
  • the material of the passivation layer is silicon oxide or silicon nitride, and the thickness is 1000 to 5000 angstroms.
  • the OLED panel is a top-emission white light OLED panel
  • the color film layer is located in a direction away from the base substrate of the OLED light-emitting layer
  • the top-emission white light OLED panel and the bottom-emission white light OLED panel The structure of the panel is similar, except that the color filter layer is located in a direction away from the base substrate of the OLED light-emitting layer, which is not repeated here.
  • the embodiment of the present application further provides a manufacturing method of an OLED panel, and the manufacturing method includes the following steps:
  • Step 1 Provide a base substrate
  • Step 2 forming an OLED light-emitting element on the base substrate, the OLED light-emitting element including a first light-emitting color sub-pixel, a second light-emitting color sub-pixel, and a third light-emitting color sub-pixel;
  • Step 3 Form a color filter layer on the OLED light-emitting element, the color filter layer including a first color filter layer arranged on the first light-emitting color sub-pixel, and a second light-emitting color sub-pixel
  • the reflective layer is made of the same material as the first color filter layer.
  • the present application provides a method for manufacturing an OLED panel.
  • the color film layer of the obtained OLED panel includes a first color film layer disposed on a first light-emitting color sub-pixel, and a second color film disposed on a second light-emitting color sub-pixel Layer, a third color film layer arranged on the third light-emitting color sub-pixel, and a reflective layer arranged between the first color film layer, the second color film layer, and the third color film layer.
  • the material of a color film layer is the same; in this application, because the first color film layer and the reflective layer of the color film layer are made of the same material, the first color film layer and the fourth color film layer can be prepared simultaneously in the same photolithography process.
  • the color film layer which can simplify a photolithography process, alleviate the complicated technical problems of the color film layer of the existing OLED panel, and save the cost of masking materials and reduce the yellow light in the photolithography process. The impact of manufacturing process on OLED panels.
  • the step of forming a color filter layer on the OLED light-emitting element includes: in a photolithography process, using a blue photoresist to simultaneously form the first color filter layer and the reflective layer.
  • the step of forming a color film layer on the OLED light-emitting element includes: in a first photolithography process, using a blue photoresist to simultaneously form the first color film layer and the reflective layer In the second photolithography process, red photoresist is used to form the second color film layer, and in the third photolithography process, green photoresist is used to form the third color film layer.
  • the step of forming a color film layer on the OLED light-emitting element includes: in the first photolithography process, using a red photoresist to form the second color film layer, and in the second step In the photolithography process, the blue photoresist is used to form the first color film layer and the reflective layer at the same time, and in the third photolithography process, the green photoresist is used to form the third color film layer.
  • the step of forming a color film layer on the OLED light-emitting element includes: in the first photolithography process, using a red photoresist to form the second color film layer, and in the second step In the photolithography process, a green photoresist is used to form the third color film layer, and in the third photolithography process, a blue photoresist is used to simultaneously form the first color film layer and the reflective layer.
  • the step of forming a color film layer on the OLED light-emitting element includes: in a photolithography process, using a semi-transparent mask to simultaneously form the first color film layer and the reflective layer The thickness of the reflective layer is greater than the thickness of the first color filter layer.
  • the step of forming a color film layer on the OLED light-emitting element includes: in the first photolithography process, using a red photoresist to form the second color film layer, and in the second step In the photolithography process, a blue photoresist and a semi-transparent mask are used to form the first color film layer and the reflective layer at the same time, and in the third photolithography process, a green photoresist is used to form the third color film Floor.
  • the step of forming a color film layer on the OLED light-emitting element includes: in a first photolithography process, using a blue photoresist and a semi-transparent mask to simultaneously form the first color film.
  • a blue photoresist and a semi-transparent mask for the film layer and the reflective layer, in the second photolithography process, red photoresist is used to form the second color film layer, and in the third photolithography process, green photoresist is used to form the third color film Floor.
  • the step of forming a color film layer on the OLED light-emitting element includes: in the first photolithography process, using a red photoresist to form the second color film layer, and in the second step In the photolithography process, a green photoresist is used to form the third color film layer. In the third photolithography process, a blue photoresist and a semi-transparent mask are used to simultaneously form the first color film layer and the reflective layer. Floor.
  • the semi-transparent mask is a grayscale mask or a halftone mask.
  • the semi-transmissive mask has an opaque area, a semi-transmissive area, and the remaining fully transparent area, the opaque area is used to form the reflective layer, and the semi-transparent area The light area is used to form the first color filter layer, and the full light-transmitting area is used to form a position where the second color filter layer and the third color filter layer are arranged.
  • the method for manufacturing an OLED panel before the step of forming a color film layer on the OLED light-emitting element, the method for manufacturing an OLED panel provided in this embodiment further includes: forming an encapsulation layer on the OLED light-emitting element, the encapsulation layer It is used to encapsulate the OLED light-emitting element; at this time, the step of forming a color film layer on the OLED light-emitting element includes: forming the color film layer on the encapsulation layer.
  • the OLED panel is a bottom emission white light OLED panel.
  • the method for manufacturing an OLED panel provided in this embodiment first forms the color film layer on the base substrate, and then forms the color film layer on the base substrate.
  • the OLED light-emitting layer is formed on the film layer.
  • the present application provides a method for manufacturing a bottom emission type white light OLED panel, including the following steps:
  • Step 1 Provide and clean a base substrate, and form a color film layer on the base substrate.
  • the color film layer includes a first light-transmitting area corresponding to the light-emitting area of the first light-emitting color sub-pixel, a second light-transmitting area corresponding to the light-emitting area of the second light-emitting color sub-pixel, and The third light-transmitting area and the light-shielding area corresponding to the light-emitting area of the third light-emitting color sub-pixel; the light-shielding area is located between the first light-transmitting area, the second light-transmitting area, and the third light-transmitting area;
  • the first color film layer in the first light-transmitting area, the second color film layer in the second light-transmitting area, and the third color film layer in the third light-transmitting area have different film materials;
  • the first color filter layer and the fourth color filter layer located in the shading area have the same film material, and the light reflectivity of the film material of the first color filter layer meets a preset requirement.
  • the base substrate is preferably a glass substrate.
  • Step 2 Depositing a buffer layer on the color filter layer.
  • the material of the buffer layer is silicon oxide (SiOx) or silicon nitride (SiNx).
  • Step 3 Depositing an oxide semiconductor film on the buffer layer and performing patterning treatment to form an oxide semiconductor layer.
  • the material of the oxide semiconductor film may be one of indium gallium zinc oxide, indium zinc tin oxide, and indium gallium zinc tin oxide.
  • Step 4 An insulating film and a first metal layer are sequentially deposited on the oxide semiconductor layer and the buffer layer.
  • the material of the insulating film is silicon oxide or silicon nitride
  • the material of the first metal layer is one or a combination of molybdenum, aluminum, copper, and titanium.
  • Step 5 The first metal layer is patterned by yellow light and etching processes to form a gate, and then the insulating film is etched using the gate as a self-aligned pattern to form a gate under the gate. Extremely insulating layer.
  • the gate and the gate insulating layer shield part of the oxide semiconductor layer, exposing both sides of the oxide semiconductor layer.
  • Step 6 Plasma treatment is performed on the entire surface of the oxide semiconductor layer, so that the resistance of the portion of the oxide semiconductor layer that is not blocked by the gate and the gate insulating layer is reduced to form a conductive layer, which is The gate and the part shielded by the gate insulating layer are still semiconductors, forming a semiconductor channel region.
  • step 6 uses helium gas or argon gas for plasma treatment.
  • Step 7 Deposit an interlayer insulating layer on the gate, the conductor layer, and the buffer layer, and perform patterning treatment through yellow light and etching processes to form sources that penetrate the interlayer insulating layer to expose part of the surface of the conductor layer.
  • the electrode contact hole, the drain contact hole, and the pixel definition hole are the same as the conductor layer.
  • the source contact hole and the drain contact hole are located on both sides of the gate and the gate insulating layer, respectively, and the pixel defining hole is close to the source contact hole.
  • the material of the interlayer insulating layer is silicon oxide or silicon nitride.
  • Step 8 A second metal layer is deposited on the interlayer insulating layer and patterned through yellow light and etching processes to form a source S and a drain D.
  • the source electrode S contacts the conductor layer through the source contact hole
  • the drain electrode D contacts the conductor layer through the drain contact hole.
  • the source S, the drain D, the gate, the gate insulating layer, the conductor layer part in contact with the source S, the conductor layer part in contact with the drain D, and the semiconductor channel region constitute a thin film transistor T.
  • the material of the second metal layer is one or a laminated combination of molybdenum, aluminum, copper, and titanium.
  • Step 9 A passivation layer is deposited on the source electrode S, the drain electrode D, and the interlayer insulating layer, and patterning is performed through a yellow light and etching process to form a through hole exposing the pixel defining hole.
  • the material of the passivation layer is silicon oxide or silicon nitride.
  • Step 10 Depositing a white light OLED light-emitting layer in the pixel defining hole using the conductor layer as an anode.
  • Step 11 Depositing a metal cathode on the white light OLED light-emitting layer and passivation layer by thermal evaporation or sputtering.
  • the manufacturing method of the bottom emission type white light OLED panel of the present application on the one hand, the thin film transistor T and the color film layer are fabricated on the same substrate, and the white light emitted by the white light OLED light emitting layer is filtered by the color film layer for color display.
  • a polarizer can reduce the manufacturing cost; on the other hand, after the gate and gate insulating layer are fabricated on the oxide semiconductor layer, plasma treatment is performed on the entire surface of the oxide semiconductor layer to make the oxide semiconductor layer The resistance of the part not covered by the gate and the gate insulating layer is reduced to form a conductive layer, while the part covered by the gate and the gate insulating layer is still a semiconductor, forming a semiconductor channel region, and the conductive layer
  • the anode of white light OLED it can save the yellow light and etching process of making the anode separately.
  • it saves the preparation of light shielding layer, flat layer, and pixel definition layer, which is defined by the pixel definition hole in the interlayer insulating layer.
  • the pixel area can simplify the process, reduce the number of 4 yellow light manufacturing processes, save 4 masks, and further reduce the production cost.
  • the OLED panel is a top-emission white light OLED panel.
  • the OLED light-emitting layer is first formed on the base substrate, and then the OLED light-emitting layer is formed on the OLED light-emitting layer.
  • the color film layer, the preparation method of the top-emission white light OLED panel is similar to the preparation method of the bottom-emission white light OLED panel, the difference is only that the OLED light-emitting layer is first formed on the substrate, and then the OLED light-emitting layer The color film layer is formed on the top, which will not be repeated.
  • the present application provides a display device, which includes an OLED panel, and the OLED panel includes:
  • OLED light-emitting element located on the base substrate, the OLED light-emitting element including a first light-emitting color sub-pixel, a second light-emitting color sub-pixel, and a third light-emitting color sub-pixel;
  • the color filter layer includes a first color filter layer provided on the first light-emitting color sub-pixel, a second color filter layer provided on the second light-emitting color sub-pixel, and a The third color filter layer on the light-emitting color sub-pixels, and the reflective layer disposed between the first color filter layer, the second color filter layer, and the third color filter layer.
  • the material of the reflective layer is the same as that of the first color filter layer.
  • the material of a color film layer is the same.
  • the film material of the first color filter layer includes a blue photoresist.
  • the film thickness of the reflective layer is greater than the film thickness of the first color filter layer.
  • the OLED panel is further provided with an encapsulation layer for encapsulating the OLED light-emitting element, and the encapsulation layer is located between the OLED light-emitting element and the color film. Between layers.
  • the thickness of the color filter layer is less than 5 microns.
  • the light-emitting color of the first light-emitting color sub-pixel is the same as the color of the first film layer
  • the light-emitting color of the second light-emitting color sub-pixel The color of the third light-emitting color sub-pixel is the same as the color of the second film layer
  • the color of the third light-emitting color sub-pixel is the same as the color of the third film layer.
  • the embodiments of the present application provide an OLED panel and a manufacturing method thereof.
  • the color film layer of the OLED panel includes a first color film layer disposed on a first light-emitting color sub-pixel, and a second color film layer disposed on a second light-emitting color sub-pixel.
  • the color film layer, the third color film layer arranged on the third light-emitting color sub-pixel, and the reflective layer arranged between the first color film layer, the second color film layer and the third color film layer, the material of the reflective layer
  • the material of the first color filter layer is the same; in this application, because the first color filter layer and the reflective layer of the color filter layer are made of the same material, the first color filter layer and the reflective layer can be prepared simultaneously in the same photolithography process.
  • the fourth color film layer in this way, can simplify a photolithography process, alleviate the complicated technical problems of the color film layer of the existing OLED panel, and save the cost of consumables for the mask, and reduce the cost of the photolithography process.

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Abstract

本申请提供一种OLED面板及其制造方法，该OLED面板的彩膜层包括第一彩膜层、第二彩膜层、第三彩膜层、以及设置在第一彩膜层、第二彩膜层和第三彩膜层之间的反射层，且反射层的材料与第一彩膜层的材料相同；在本申请中，因为彩膜层的第一彩膜层和反射层的膜层材料相同，节省了掩膜板的耗材成本。

Description

OLED面板及其制造方法 技术领域
本申请涉及显示技术领域，尤其涉及一种OLED面板及其制造方法。
 背景技术
现有OLED显示装置为了降低厚度，需要对显示装置内的功能构件进行精简，因此现有技术出现了使用彩膜层替换偏光片，基于彩膜层的黑色矩阵来实现外界光线的反射。
如图1所示，OLED面板包括彩膜层11、封装层12、发光元件13以及衬底基板14，彩膜层11包括红色光阻R、绿色光阻G、蓝色光阻B、以及黑色矩阵BM，因此，在OLED面板上形成彩膜层时，需要4道光刻制程，工艺比较繁杂。
因此，现有OLED面板的彩膜层存在制程繁杂的技术问题。
 技术问题
本申请提供一种OLED面板及其制造方法，以缓解现有OLED面板的彩膜层存在的制程繁杂的技术问题。
 技术解决方案
为解决上述问题，本申请提供的技术方案如下：
本申请实施例提供一种OLED面板，所述OLED面板包括：
衬底基板；
位于所述衬底基板上的OLED发光元件，所述OLED发光元件包括第一发光颜色子像素、第二发光颜色子像素以及第三发光颜色子像素；以及
位于所述OLED发光元件上的彩膜层；
其中，所述彩膜层包括设置在所述第一发光颜色子像素上的第一彩膜层、设置在所述第二发光颜色子像素上的第二彩膜层、设置在所述第三发光颜色子像素上的第三彩膜层、以及设置在所述第一彩膜层、第二彩膜层和第三彩膜层之间的反射层，所述反射层的材料与所述第一彩膜层的材料相同。
在本申请实施例提供的OLED面板中，所述第一彩膜层的膜层材料包括蓝色光阻。
在本申请实施例提供的OLED面板中，所述反射层的膜层厚度大于所述第一彩膜层的膜层厚度。
在本申请实施例提供的OLED面板中，所述OLED面板还设有用于封装所述OLED发光元件的封装层，所述封装层位于所述OLED发光元件与所述彩膜层之间。
在本申请实施例提供的OLED面板中，所述彩膜层的厚度小于5微米。
在本申请实施例提供的OLED面板中，所述第一发光颜色子像素的发光颜色与所述第一膜层的颜色相同，所述第二发光颜色子像素的发光颜色与所述第二膜层的颜色相同，所述第三发光颜色子像素的发光颜色与所述第三膜层的颜色相同。
在本申请实施例提供的OLED面板中，所述OLED面板还包括设置在彩膜层上的平坦化层。
在本申请实施例提供的OLED面板中，所述衬底基板包括玻璃基板。
在本申请实施例提供的OLED面板中，所述缓冲层的材料包括氧化硅、或氮化硅。
在本申请实施例提供的OLED面板中，所述缓冲层的厚度为5000至10000埃米。
在本申请实施例提供的OLED面板中，所述第一发光颜色子像素、第二发光颜色子像素以及第三发光颜色子像素是红绿蓝三种发光颜色子像素中的一种。
在本申请实施例提供的OLED面板中，所述OLED面板还包括第四发光颜色子像素，所述彩膜层包括设置在第四发光颜色子像素上的第四彩膜层，第一彩膜层、第二彩膜层、第三彩膜层、和第四彩膜层的膜层材料不同。
本申请实施例提供一种OLED面板的制造方法，所述制造方法包括：
提供衬底基板；
在所述衬底基板上形成OLED发光元件，所述OLED发光元件包括第一发光颜色子像素、第二发光颜色子像素以及第三发光颜色子像素；
在所述OLED发光元件上形成彩膜层，所述彩膜层包括设置在所述第一发光颜色子像素上的第一彩膜层、设置在所述第二发光颜色子像素上的第二彩膜层、设置在所述第三发光颜色子像素上的第三彩膜层、以及设置在所述第一彩膜层、第二彩膜层和第三彩膜层之间的反射层，所述反射层的材料与所述第一彩膜层的材料相同。
在本申请实施例提供的OLED面板的制造方法中，所述在所述OLED发光元件上形成彩膜层的步骤包括：在一道光刻工艺中，使用蓝色光阻同时形成所述第一彩膜层和所述反射层。
在本申请实施例提供的OLED面板的制造方法中，所述在所述OLED发光元件上形成彩膜层的步骤包括：在第一道光刻工艺中，使用蓝色光阻同时形成所述第一彩膜层和所述反射层，在第二道光刻工艺中，使用红色光阻形成所述第二彩膜层，在第三道光刻工艺中，使用绿色光阻形成所述第三彩膜层。
在本申请实施例提供的OLED面板的制造方法中，所述在所述OLED发光元件上形成彩膜层的步骤包括：在第一道光刻工艺中，使用红色光阻形成所述第二彩膜层，在第二道光刻工艺中，使用蓝色光阻同时形成所述第一彩膜层和所述反射层，在第三道光刻工艺中，使用绿色光阻形成所述第三彩膜层。
在本申请实施例提供的OLED面板的制造方法中，所述在所述OLED发光元件上形成彩膜层的步骤包括：在第一道光刻工艺中，使用红色光阻形成所述第二彩膜层，在第二道光刻工艺中，使用绿色光阻形成所述第三彩膜层，在第三道光刻工艺中，使用蓝色光阻同时形成所述第一彩膜层和所述反射层。
在本申请实施例提供的OLED面板的制造方法中，所述在所述OLED发光元件上形成彩膜层的步骤包括：在一道光刻工艺中，使用半透光光罩同时形成所述第一彩膜层和所述反射层，所述反射层的膜层厚度大于所述第一彩膜层的膜层厚度。
在本申请实施例提供的OLED面板的制造方法中，所述在所述OLED发光元件上形成彩膜层的步骤包括：在第一道光刻工艺中，使用红色光阻形成所述第二彩膜层，在第二道光刻工艺中，使用绿色光阻形成所述第三彩膜层，在第三道光刻工艺中，使用蓝色光阻以及半透光光罩同时形成所述第一彩膜层和所述反射层。
在本申请实施例提供的OLED面板的制造方法中，在所述OLED发光元件上形成彩膜层的步骤之前，还包括：在所述OLED发光元件上形成封装层，所述封装层用于封装所述OLED发光元件；此时，所述在所述OLED发光元件上形成彩膜层的步骤包括：在所述封装层上形成所述彩膜层。
 有益效果
本申请提供一种OLED面板及其制造方法，其OLED面板的彩膜层包括设置在第一发光颜色子像素上的第一彩膜层、设置在第二发光颜色子像素上的第二彩膜层、设置在第三发光颜色子像素上的第三彩膜层、以及设置在第一彩膜层、第二彩膜层和第三彩膜层之间的反射层，反射层的材料与第一彩膜层的材料相同；在本申请中，因为彩膜层的第一彩膜层和反射层的膜层材料相同，可以在同一道光刻制程中同时制备第一彩膜层和第四彩膜层，这样就可以简化一道光刻制程，缓解了现有OLED面板的彩膜层存在的制程繁杂的技术问题，同时节省了掩膜板的耗材成本，也减少了光刻制程中黄光制程对OLED面板的影响。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有OLED面板的结构示意图；
图2为本申请实施例提供的OLED面板的第一种结构示意图；
图3为本申请实施例提供的OLED面板的第二种结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
针对现有OLED面板的彩膜层存在制程繁杂的技术问题，本申请实施例可以缓解。
在一种实施例中，如图2和图3所示，本申请实施例提供的OLED面板包括：
衬底基板21，该衬底基板21包括衬底、以及形成在衬底上的驱动电路；
位于所述衬底基板21上的OLED发光元件22，所述OLED发光元件22包括第一发光颜色子像素221、第二发光颜色子像素222以及第三发光颜色子像素223；以及
位于所述OLED发光元件22上的彩膜层23；
其中，所述彩膜层23包括设置在所述第一发光颜色子像素221上的第一彩膜层231、设置在所述第二发光颜色子像素222上的第二彩膜层232、设置在所述第三发光颜色子像素223上的第三彩膜层233、以及设置在所述第一彩膜层231、第二彩膜层232和第三彩膜层233之间的反射层234，所述反射层234的材料与所述第一彩膜层231的材料相同。
在本实施例中，第一彩膜层231的膜层材料的光线反射率满足预设要求，可以满足人眼的视觉要求，例如对第一彩膜层231的膜层材料对外界光线的光线反射率低于5%等。
本实施例提供一种OLED面板，所述OLED面板的彩膜层包括设置在第一发光颜色子像素上的第一彩膜层、设置在第二发光颜色子像素上的第二彩膜层、设置在第三发光颜色子像素上的第三彩膜层、以及设置在第一彩膜层、第二彩膜层和第三彩膜层之间的反射层，反射层的材料与第一彩膜层的材料相同；在本申请中，因为彩膜层的第一彩膜层和反射层的膜层材料相同，可以在同一道光刻制程中同时制备第一彩膜层和第四彩膜层，这样就可以简化一道光刻制程，缓解了现有OLED面板的彩膜层存在的制程繁杂的技术问题，同时节省了掩膜板的耗材成本，也减少了光刻制程中黄光制程对OLED面板的影响。
在一种实施例中，OLED面板包括红绿蓝三种发光颜色子像素，第一发光颜色子像素221、第二发光颜色子像素222以及第三发光颜色子像素223是红绿蓝三种发光颜色子像素中的一种。
在一种实施例中，OLED面板包括红绿蓝白四种发光颜色子像素，第一发光颜色子像素221、第二发光颜色子像素222以及第三发光颜色子像素223是红绿蓝三种发光颜色子像素中的一种，此时，OLED面板还包括第四发光颜色子像素，彩膜层23包括设置在第四发光颜色子像素上的第四彩膜层，第一彩膜层231、第二彩膜层232、第三彩膜层2333、和第四彩膜层的膜层材料不同。
在一种实施例中，OLED发光元件22的所有子像素都发同一种颜色的光，通过彩膜层23进行出光颜色的转换，得到OLED面板的各种发光颜色的子像素。例如OLED发光元件22的所有子像素都发白光，彩膜层通过第一彩膜层（材料为蓝色光阻）、第二彩膜层（材料为红色光阻）、第三彩膜层（材料为绿色光阻）的转换得到三种发光颜色的子像素。
在一种实施例中，所述第一彩膜层231的膜层材料包括蓝色光阻。这是因为蓝色光阻所反射的外界光线的主要发射峰，在人眼视觉函数的低敏感区域，因此蓝色光阻的反射率较低，满足预设要求，可以满足人眼的视觉要求。本实施例通过蓝色光阻制备第一彩膜层，降低了材料成本。
在一种实施例中，如图3所示，所述反射层234的膜层厚度大于所述第一彩膜层的膜层厚度。本实施例增大反射层的膜层厚度，进一步降低了OLED面板在遮光区内的反射率。
在一种实施例中，如图3所示，所述OLED面板还包括设置在彩膜层23上的平坦化层25，以实现OLED面板表面的平坦化。
在一种实施例中，所述彩膜层23的厚度小于5微米。
在一种实施例中，如图2所示，所述OLED面板还设有用于封装所述OLED发光元件的封装层24，所述封装层24位于所述OLED发光元件22与所述彩膜层23之间。
在一种实施例中，OLED面板为底发射型白光OLED面板，所述彩膜层位于所述衬底基板和所述OLED发光层之间。
现针对底发射型白光OLED面板进行进一步的说明。
在一种实施例中，本申请实施例提供的底发射型白光OLED面板包括第一发光颜色子像素、第二发光颜色子像素以及第三发光颜色子像素，其具体包括:
衬底基板；
覆盖所述衬底基板的彩膜层，彩膜层包括与所述第一发光颜色子像素出光区对应的第一透光区、与所述第二发光颜色子像素出光区对应的第二透光区、与所述第三发光颜色子像素出光区对应的第三透光区、以及遮光区；所述遮光区位于所述第一透光区、第二透光区和第三透光区之间；位于所述第一透光区的第一彩膜层、位于所述第二透光区的第二彩膜层、和位于所述第三透光区的第三彩膜层的膜层材料不同；所述第一彩膜层和位于所述遮光区的第四彩膜层的膜层材料相同，且所述第一彩膜层的膜层材料的光线反射率满足预设要求；
覆盖所述彩膜层的缓冲层；
设在所述缓冲层上的半导体沟道区、及分别连接所述半导体沟道区两侧的导体层；
覆盖所述半导体沟道区的栅极绝缘层；
覆盖所述栅极绝缘层的栅极；
设在所述栅极、导体层、及缓冲层上的层间绝缘层，所述层间绝缘层具有贯穿该层间绝缘层以分别暴露出导体层部分表面的源极接触孔,漏极接触孔、及像素定义孔，所述源极接触孔与漏极接触孔分别位于所述栅极及栅极绝缘层的两侧，所述像素定义孔靠近所述源极接触孔；
设在所述层间绝缘层上的源极S、与漏极D，所述源极S经所述源极接触孔接触所述导体层，所述漏极D经所述漏极接触孔接触所述导体层；
设在所述源极S,漏极D、及层间绝缘层上的钝化层，所述钝化层具有暴露出所述像素定义孔的通孔；
设在所述像素定义孔内且以所述导体层为阳极的白光OLED发光层；
以及设在所述白光OLED发光层与钝化层上的金属阴极。
其中，所述源极S,漏极D,栅极、栅极绝缘层、与所述源极S接触的导体层部分、与所述漏极D接触的导体层部分、及半导体沟道区构成薄膜晶体管T；所述半导体沟道区、及分别连接所述半导体沟道区两侧的导体层通过对氧化物半导体层进行整面的等离子体处理得到，所述氧化物半导体层未被所述栅极及栅极绝缘层遮挡的部分电阻降低，形成导体层，而被所述栅极及栅极绝缘层遮挡的部分仍为半导体，形成半导体沟道区。
本实施例的底发射型白光OLED面板，将薄膜晶体管T与彩膜层设置在同一衬底基板上，白光OLED发光层发出的白光经彩膜层滤光后进行彩色显示，无需设置偏光片，制作成本较低；以与半导体沟道区位于同一层别的导体层作为白光OLED的阳极，无需专门设置单独的阳极，另外，还省去了遮光层、平坦层、与像素定义层的设置，以层间绝缘层内的像素定义孔来界定像素区域，不仅简化了结构，还能够进一步降低制作成本。
在一种实施例中，所述衬底基板优选玻璃基板。
在一种实施例中，所述缓冲层的材料为氧化硅、或氮化硅，厚度为5000至10000埃米（1埃米等于0.1纳米）。
在一种实施例中，所述导体层及半导体沟道区的原始材料为铟镓锌氧化物、铟锌锡氧化物、铟镓锌锡氧化物中的一种，厚度为400至1000埃米。
在一种实施例中，所述栅极绝缘层的材料为氧化硅、或氮化硅，厚度为1000至3000埃米。
在一种实施例中，所述栅极的材料为钼,铝,铜,钛中的一种或几种的层叠组合，厚度为2000至8000埃米。
在一种实施例中，所述层间绝缘层的材料为氧化硅、或氮化硅，厚度为2000至10000埃米。
在一种实施例中，所述源极S与漏极D的材料均为钼,铝,铜,钛中的一种或几种的层叠组合，厚度为2000至8000埃米。
在一种实施例中，所述钝化层的材料为氧化硅、或氮化硅，厚度为1000至5000埃米。
在一种实施例中，OLED面板为顶发射型白光OLED面板，所述彩膜层位于所述OLED发光层远离所述衬底基板的方向上，顶发射型白光OLED面板和底发射型白光OLED面板的结构类似，区别仅仅是彩膜层位于所述OLED发光层远离所述衬底基板的方向上，不再赘述。
在一种实施例中，本申请实施例还提供了一种OLED面板的制造方法，所述制造方法包括以下步骤：
步骤一：提供衬底基板；
步骤二：在所述衬底基板上形成OLED发光元件，所述OLED发光元件包括第一发光颜色子像素、第二发光颜色子像素以及第三发光颜色子像素；
步骤三：在所述OLED发光元件上形成彩膜层，所述彩膜层包括设置在所述第一发光颜色子像素上的第一彩膜层、设置在所述第二发光颜色子像素上的第二彩膜层、设置在所述第三发光颜色子像素上的第三彩膜层、以及设置在所述第一彩膜层、第二彩膜层和第三彩膜层之间的反射层，所述反射层的材料与所述第一彩膜层的材料相同。
本申请提供一种OLED面板制造方法，其得到的OLED面板的彩膜层包括设置在第一发光颜色子像素上的第一彩膜层、设置在第二发光颜色子像素上的第二彩膜层、设置在第三发光颜色子像素上的第三彩膜层、以及设置在第一彩膜层、第二彩膜层和第三彩膜层之间的反射层，反射层的材料与第一彩膜层的材料相同；在本申请中，因为彩膜层的第一彩膜层和反射层的膜层材料相同，可以在同一道光刻制程中同时制备第一彩膜层和第四彩膜层，这样就可以简化一道光刻制程，缓解了现有OLED面板的彩膜层存在的制程繁杂的技术问题，同时节省了掩膜板的耗材成本，也减少了光刻制程中黄光制程对OLED面板的影响。
在一种实施例中，所述在所述OLED发光元件上形成彩膜层的步骤包括：在一道光刻工艺中，使用蓝色光阻同时形成所述第一彩膜层和所述反射层。
在一种实施例中，所述在所述OLED发光元件上形成彩膜层的步骤包括：在第一道光刻工艺中，使用蓝色光阻同时形成所述第一彩膜层和所述反射层，在第二道光刻工艺中，使用红色光阻形成所述第二彩膜层，在第三道光刻工艺中，使用绿色光阻形成所述第三彩膜层。
在一种实施例中，所述在所述OLED发光元件上形成彩膜层的步骤包括：在第一道光刻工艺中，使用红色光阻形成所述第二彩膜层，在第二道光刻工艺中，使用蓝色光阻同时形成所述第一彩膜层和所述反射层，在第三道光刻工艺中，使用绿色光阻形成所述第三彩膜层。
在一种实施例中，所述在所述OLED发光元件上形成彩膜层的步骤包括：在第一道光刻工艺中，使用红色光阻形成所述第二彩膜层，在第二道光刻工艺中，使用绿色光阻形成所述第三彩膜层，在第三道光刻工艺中，使用蓝色光阻同时形成所述第一彩膜层和所述反射层。
在一种实施例中，所述在所述OLED发光元件上形成彩膜层的步骤包括：在一道光刻工艺中，使用半透光光罩同时形成所述第一彩膜层和所述反射层，所述反射层的膜层厚度大于所述第一彩膜层的膜层厚度。
在一种实施例中，所述在所述OLED发光元件上形成彩膜层的步骤包括：在第一道光刻工艺中，使用红色光阻形成所述第二彩膜层，在第二道光刻工艺中，使用蓝色光阻以及半透光光罩同时形成所述第一彩膜层和所述反射层，在第三道光刻工艺中，使用绿色光阻形成所述第三彩膜层。
在一种实施例中，所述在所述OLED发光元件上形成彩膜层的步骤包括：在第一道光刻工艺中，使用蓝色光阻以及半透光光罩同时形成所述第一彩膜层和所述反射层，在第二道光刻工艺中，使用红色光阻形成所述第二彩膜层，在第三道光刻工艺中，使用绿色光阻形成所述第三彩膜层。
在一种实施例中，所述在所述OLED发光元件上形成彩膜层的步骤包括：在第一道光刻工艺中，使用红色光阻形成所述第二彩膜层，在第二道光刻工艺中，使用绿色光阻形成所述第三彩膜层，在第三道光刻工艺中，使用蓝色光阻以及半透光光罩同时形成所述第一彩膜层和所述反射层。
在一种实施例中，所述半透光光罩为灰阶光罩或半色调光罩。
在一种实施例中，所述半透光光罩具有不透光区、半透光区及剩余的全透光区，所述不透光区用于形成所述反射层，所述半透光区用于形成所述第一彩膜层，所述全透光区用于形成设置第二彩膜层和第三彩膜层的位置。
在一种实施例中，本实施例提供的OLED面板的制造方法在所述OLED发光元件上形成彩膜层的步骤之前，还包括：在所述OLED发光元件上形成封装层，所述封装层用于封装所述OLED发光元件；此时，所述在所述OLED发光元件上形成彩膜层的步骤包括：在所述封装层上形成所述彩膜层。
在一种实施例中， OLED面板为底发射型白光OLED面板，此时，本实施例提供的OLED面板的制造方法先在所述衬底基板上形成所述彩膜层，后在所述彩膜层上形成所述OLED发光层。
现针对底发射型白光OLED面板的制备方法进行进一步的说明。
在一种实施例中，本申请提供一种底发射型白光OLED面板的制作方法，包括以下步骤：
步骤l、提供衬底基板并清洗，在所述衬底基板上形成彩膜层。
在一种实施例中，彩膜层包括与所述第一发光颜色子像素出光区对应的第一透光区、与所述第二发光颜色子像素出光区对应的第二透光区、与所述第三发光颜色子像素出光区对应的第三透光区、以及遮光区；所述遮光区位于所述第一透光区、第二透光区和第三透光区之间；位于所述第一透光区的第一彩膜层、位于所述第二透光区的第二彩膜层、和位于所述第三透光区的第三彩膜层的膜层材料不同；所述第一彩膜层和位于所述遮光区的第四彩膜层的膜层材料相同，且所述第一彩膜层的膜层材料的光线反射率满足预设要求。
在一种实施例中，所述衬底基板优选玻璃基板。
步骤2、在所述彩膜层上沉积缓冲层。
在一种实施例中，该步骤2中，缓冲层的材料为氧化硅(SiOx)、或氮化硅(SiNx)。
步骤3、在所述缓冲层上沉积氧化物半导体薄膜并进行图案化处理，形成氧化物半导体层。
在一种实施例中，该步骤3中，氧化物半导体薄膜的材料可为铟镓锌氧化物、铟锌锡氧化物、铟镓锌锡氧化物中的一种。
步骤4、在所述氧化物半导体层与缓冲层上依次沉积绝缘薄膜、与第一金属层。
在一种实施例中，该步骤4中，绝缘薄膜的材料为氧化硅、或氮化硅，第一金属层的材料为钼、铝、铜,钛中的一种或几种的层叠组合。
步骤5、先通过黄光、蚀刻制程对所述第一金属层进行图案化处理，形成栅极，再以所述栅极为自对准图形来蚀刻绝缘薄膜，形成位于所述栅极下方的栅极绝缘层。
在一种实施例中，所述栅极与栅极绝缘层遮挡部分氧化物半导体层，暴露出氧化物半导体层的两侧。
步骤6、对所述氧化物半导体层进行整面的等离子体处理，使得所述氧化物半导体层未被所述栅极及栅极绝缘层遮挡的部分电阻降低，形成导体层，而被所述栅极及栅极绝缘层遮挡的部分仍为半导体，形成半导体沟道区。
在一种实施例中，该步骤6利用氦气、或氩气进行等离子体处理。
步骤7、在所述栅极、导体层、及缓冲层上沉积层间绝缘层并通过黄光、蚀刻制程进行图案化处理，形成贯穿该层间绝缘层以分别暴露出导体层部分表面的源极接触孔、漏极接触孔、及像素定义孔。
在一种实施例中，所述源极接触孔与漏极接触孔分别位于所述栅极及栅极绝缘层的两侧，所述像素定义孔靠近所述源极接触孔。
在一种实施例中，该步骤7中，层间绝缘层的材料为氧化硅、或氮化硅。
步骤8、在所述层间绝缘层上沉积第二金属层并通过黄光、蚀刻制程进行图案化处理，形成源极S、及漏极D。所述源极S经所述源极接触孔接触所述导体层,所述漏极D经所述漏极接触孔接触所述导体层。
所述源极S,漏极D、栅极,栅极绝缘层、与所述源极S接触的导体层部分、与所述漏极D接触的导体层部分、及半导体沟道区构成薄膜晶体管T。
在一种实施例中，该步骤8中，第二金属层的材料为钼、铝、铜,钛中的一种或几种的层叠组合。
步骤9、在所述源极S,漏极D、及层间绝缘层上沉积钝化层并通过黄光、蚀刻制程进行图案化处理，形成暴露出所述像素定义孔的通孔。
在一种实施例中，该步骤9中，钝化层的材料为氧化硅、或氮化硅。
步骤10、以所述导体层为阳极在所述像素定义孔内沉积白光OLED发光层。
步骤11、在所述白光OLED发光层与钝化层上以热蒸镀或溅镀的方式沉积金属阴极。
至此，完成底发射型白光OLED面板的制作。
本申请的底发射型白光OLED面板的制作方法，一方面将薄膜晶体管T与彩膜层制作在同一衬底基板上，白光OLED发光层发出的白光经彩膜层滤光后进行彩色显示，无需设置偏光片，能够降低制作成本；另一方面在氧化物半导体层上制作出栅极及栅极绝缘层后对所述氧化物半导体层进行整面的等离子体处理，使得所述氧化物半导体层未被所述栅极及栅极绝缘层遮挡的部分电阻降低，形成导体层，而被所述栅极及栅极绝缘层遮挡的部分仍为半导体，形成半导体沟道区，以所述导体层作为白光OLED的阳极，能够省去单独制作阳极的黄光与蚀刻制程，另外，还省去了遮光层、平坦层、与像素定义层的制备，以层间绝缘层内的像素定义孔来界定像素区域，能够简化工序，减少4道黄光制程道数，节省4个光罩，进一步降低制作成本。
在本申请的OLED面板的制造方法中，OLED面板为顶发射型白光OLED面板，此时，先在所述衬底基板上形成所述OLED发光层，后在所述OLED发光层上形成所述彩膜层，顶发射型白光OLED面板的制备方法和底发射型白光OLED面板的制备方法类似，区别仅仅是先在所述衬底基板上形成所述OLED发光层，后在所述OLED发光层上形成所述彩膜层，不再赘述。
同时，本申请提供一种显示装置，该显示装置包括OLED面板，所述OLED面板包括：
衬底基板；
位于所述衬底基板上的OLED发光元件，所述OLED发光元件包括第一发光颜色子像素、第二发光颜色子像素以及第三发光颜色子像素；以及
位于所述OLED发光元件上的彩膜层；
其中，所述彩膜层包括设置在所述第一发光颜色子像素上的第一彩膜层、设置在所述第二发光颜色子像素上的第二彩膜层、设置在所述第三发光颜色子像素上的第三彩膜层、以及设置在所述第一彩膜层、第二彩膜层和第三彩膜层之间的反射层，所述反射层的材料与所述第一彩膜层的材料相同。
在一种实施例中，在本实施例提供的显示装置中，所述第一彩膜层的膜层材料包括蓝色光阻。
在一种实施例中，在本实施例提供的显示装置中，所述反射层的膜层厚度大于所述第一彩膜层的膜层厚度。
在一种实施例中，在本实施例提供的显示装置中，所述OLED面板还设有用于封装所述OLED发光元件的封装层，所述封装层位于所述OLED发光元件与所述彩膜层之间。
在一种实施例中，在本实施例提供的显示装置中，所述彩膜层的厚度小于5微米。
在一种实施例中，在本实施例提供的显示装置中，所述第一发光颜色子像素的发光颜色与所述第一膜层的颜色相同，所述第二发光颜色子像素的发光颜色与所述第二膜层的颜色相同，所述第三发光颜色子像素的发光颜色与所述第三膜层的颜色相同。
根据上述实施例可知：
本申请实施例提供一种OLED面板及其制造方法，其OLED面板的彩膜层包括设置在第一发光颜色子像素上的第一彩膜层、设置在第二发光颜色子像素上的第二彩膜层、设置在第三发光颜色子像素上的第三彩膜层、以及设置在第一彩膜层、第二彩膜层和第三彩膜层之间的反射层，反射层的材料与第一彩膜层的材料相同；在本申请中，因为彩膜层的第一彩膜层和反射层的膜层材料相同，可以在同一道光刻制程中同时制备第一彩膜层和第四彩膜层，这样就可以简化一道光刻制程，缓解了现有OLED面板的彩膜层存在的制程繁杂的技术问题，同时节省了掩膜板的耗材成本，也减少了光刻制程中黄光制程对OLED面板的影响。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (19)

  1. 一种OLED面板，其包括：
    衬底基板；
    位于所述衬底基板上的OLED发光元件，所述OLED发光元件包括第一发光颜色子像素、第二发光颜色子像素以及第三发光颜色子像素；以及
    位于所述OLED发光元件上的彩膜层；
    其中，所述彩膜层包括设置在所述第一发光颜色子像素上的第一彩膜层、设置在所述第二发光颜色子像素上的第二彩膜层、设置在所述第三发光颜色子像素上的第三彩膜层、以及设置在所述第一彩膜层、第二彩膜层和第三彩膜层之间的反射层，所述反射层的材料与所述第一彩膜层的材料相同。
  2. 如权利要求1所述的OLED面板，其中，所述第一彩膜层的膜层材料包括蓝色光阻。
  3. 如权利要求1所述的OLED面板，其中，所述反射层的膜层厚度大于所述第一彩膜层的膜层厚度。
  4. 如权利要求1所述的OLED面板，其中，所述OLED面板还设有用于封装所述OLED发光元件的封装层，所述封装层位于所述OLED发光元件与所述彩膜层之间。
  5. 如权利要求1所述的OLED面板，其中，所述彩膜层的厚度小于5微米。
  6. 如权利要求1所述的OLED面板，其中，所述第一发光颜色子像素的发光颜色与所述第一膜层的颜色相同，所述第二发光颜色子像素的发光颜色与所述第二膜层的颜色相同，所述第三发光颜色子像素的发光颜色与所述第三膜层的颜色相同。
  7. 如权利要求1所述的OLED面板，其中，所述OLED面板还包括设置在彩膜层上的平坦化层。
  8. 如权利要求1所述的OLED面板，其中，所述衬底基板包括玻璃基板。
  9. 如权利要求1所述的OLED面板，其中，所述缓冲层的材料包括氧化硅、或氮化硅。
  10. 如权利要求1所述的OLED面板，其中，所述缓冲层的厚度为5000至10000埃米。
  11. 如权利要求1所述的OLED面板，其中，所述第一发光颜色子像素、第二发光颜色子像素以及第三发光颜色子像素是红绿蓝三种发光颜色子像素中的一种。
  12. 如权利要求1所述的OLED面板，其中，所述OLED面板还包括第四发光颜色子像素，所述彩膜层包括设置在第四发光颜色子像素上的第四彩膜层，第一彩膜层、第二彩膜层、第三彩膜层、和第四彩膜层的膜层材料不同。13、一种OLED面板的制造方法，其包括：
    提供衬底基板；
    在所述衬底基板上形成OLED发光元件，所述OLED发光元件包括第一发光颜色子像素、第二发光颜色子像素以及第三发光颜色子像素；
    在所述OLED发光元件上形成彩膜层，所述彩膜层包括设置在所述第一发光颜色子像素上的第一彩膜层、设置在所述第二发光颜色子像素上的第二彩膜层、设置在所述第三发光颜色子像素上的第三彩膜层、以及设置在所述第一彩膜层、第二彩膜层和第三彩膜层之间的反射层，所述反射层的材料与所述第一彩膜层的材料相同。
  13. 如权利要求13所述的OLED面板的制造方法，其中，所述在所述OLED发光元件上形成彩膜层的步骤包括：在一道光刻工艺中，使用蓝色光阻同时形成所述第一彩膜层和所述反射层。
  14. 如权利要求13所述的OLED面板的制造方法，其中，所述在所述OLED发光元件上形成彩膜层的步骤包括：在第一道光刻工艺中，使用蓝色光阻同时形成所述第一彩膜层和所述反射层，在第二道光刻工艺中，使用红色光阻形成所述第二彩膜层，在第三道光刻工艺中，使用绿色光阻形成所述第三彩膜层。
  15. 如权利要求13所述的OLED面板的制造方法，其中，所述在所述OLED发光元件上形成彩膜层的步骤包括：在第一道光刻工艺中，使用红色光阻形成所述第二彩膜层，在第二道光刻工艺中，使用蓝色光阻同时形成所述第一彩膜层和所述反射层，在第三道光刻工艺中，使用绿色光阻形成所述第三彩膜层。
  16. 如权利要求13所述的OLED面板的制造方法，其中，所述在所述OLED发光元件上形成彩膜层的步骤包括：在第一道光刻工艺中，使用红色光阻形成所述第二彩膜层，在第二道光刻工艺中，使用绿色光阻形成所述第三彩膜层，在第三道光刻工艺中，使用蓝色光阻同时形成所述第一彩膜层和所述反射层。
  17. 如权利要求13所述的OLED面板的制造方法，其中，所述在所述OLED发光元件上形成彩膜层的步骤包括：在一道光刻工艺中，使用半透光光罩同时形成所述第一彩膜层和所述反射层，所述反射层的膜层厚度大于所述第一彩膜层的膜层厚度。
  18. 如权利要求13所述的OLED面板的制造方法，其中，所述在所述OLED发光元件上形成彩膜层的步骤包括：在第一道光刻工艺中，使用红色光阻形成所述第二彩膜层，在第二道光刻工艺中，使用绿色光阻形成所述第三彩膜层，在第三道光刻工艺中，使用蓝色光阻以及半透光光罩同时形成所述第一彩膜层和所述反射层。
  19. 如权利要求13所述的OLED面板的制造方法，其中，在所述OLED发光元件上形成彩膜层的步骤之前，还包括：
    在所述OLED发光元件上形成封装层，所述封装层用于封装所述OLED发光元件；
    此时，所述在所述OLED发光元件上形成彩膜层的步骤包括：在所述封装层上形成所述彩膜层。
PCT/CN2019/099240 2019-05-15 2019-08-05 Oled面板及其制造方法 WO2020228148A1 (zh)

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