WO2020224301A1 - 应用于多高压源的浮动高压选择电路 - Google Patents

应用于多高压源的浮动高压选择电路 Download PDF

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WO2020224301A1
WO2020224301A1 PCT/CN2020/072302 CN2020072302W WO2020224301A1 WO 2020224301 A1 WO2020224301 A1 WO 2020224301A1 CN 2020072302 W CN2020072302 W CN 2020072302W WO 2020224301 A1 WO2020224301 A1 WO 2020224301A1
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voltage
source
power domain
voltage sources
high voltage
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曹骁飞
吴建刚
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思瑞浦微电子科技（苏州）股份有限公司
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Publication of WO2020224301A1 publication Critical patent/WO2020224301A1/zh

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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only

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  • the invention relates to a floating high-voltage selection circuit, in particular to an improvement of a high-voltage selection circuit capable of suppressing the transient voltage jump during switching.
  • the hysteresis comparator is composed of PMOS transistors MP1 and MP2.
  • the source of MP1 is connected to a high voltage source VDD1, and the gate is connected to the switch signal S1_N.
  • the source of MP2 is connected to a high voltage source VDD2 and the gate is connected to the switch.
  • the signal S1 and the common drain of MP1 and MP2 are the selected output voltage VDD_SEL.
  • the high voltage source VDD1 and the high voltage source VDD2 are the high voltage sources to be selected for floating.
  • the output voltage VDD_SEL will simultaneously generate a 100mV voltage jump.
  • the purpose of the present invention is to propose a floating high-voltage selection circuit applied to multiple high-voltage sources to solve the jump of switching high-voltage sources.
  • the technical solution adopted by the present invention is a floating high voltage selection circuit applied to multiple high voltage sources, which is based on a comparator, and is characterized in that a linear smooth switching high voltage is connected to the control switch of the comparator voltage selection Source of fully differential amplifier.
  • the comparator is composed of PMOS transistors MP1 and MP2, wherein the source of MP1 is connected to a high voltage source VDD1, the gate is connected to the switching signal S1_N, the source of MP2 is connected to a high voltage source VDD2, and the gate is connected to The switching signal S1 and the common drain of MP1 and MP2 are the selected output voltage VDD_SEL.
  • the fully differential amplifier is composed of resistors R1, R2, PMOS transistors MP3, MP4, and NMOS transistors MN1, MN2, MN3, and MN4, wherein MN1, MN4 are connected to form a current mirror with common source grounding, MN1,
  • MN1, MN4 are connected to form a current mirror with common source grounding
  • MN1 The common gate of MN4 is connected to the common drain of MN4 and MP4.
  • the gate of MP4 and the source of MP2 in the comparator are connected to the voltage signal VSEN_2.
  • the drain of MN1 is connected in series with the resistor R1 and the common drain of MP1 in the comparator.
  • the drain is connected to the gate of MP1 as a switching signal; MN2 and MN3 are connected to form another current mirror with common source grounding.
  • the common gate of MN2 and MN3 is connected to the common drain of MN3 and MP3.
  • the gate of MP3 The pole and the source of MP1 in the comparator are connected to the voltage signal VSEN_1, the drain of MN2 is connected in series with the resistor R2 and the drain of MP2 in the comparator in turn, and is connected to the gate of MP2 as a switching signal; MP3 and MP4 share the source Connect the current source, and the common drain of MP1 and MP2 is the selected output voltage VDD_SEL.
  • the voltage signal VSEN_1 is the average value of the power domain 1
  • the power domain 1 is a number of high voltage sources VDD2N-1 connected in parallel with the source of MP1 with equivalent resistances
  • N is the number of high voltage sources in the power domain 1.
  • VSEN_1 (VDD1+VDD3+...+VDD2N-1)/N.
  • the voltage signal VSEN_1 is the weighted average value of the power domain 1.
  • the power domain 1 is a plurality of high voltage sources VDD2N-1 connected in parallel to the source of MP1 with a difference resistor, and N is the power source of the high voltage source in the power domain 1. Quantity.
  • the voltage signal VSEN_2 is a weighted average value of the power domain 2, which is a number of high voltage sources VDD2N connected in parallel to the MP2 source with a difference resistor, and N is the number of high voltage sources in the power domain 2.
  • the floating high-voltage selection circuit design of the present invention has outstanding substantive features and significant progress: the voltage selection switch is controlled to be turned on in an interval through a fully differential low-gain amplifier, which can realize a linear and smooth high-voltage source switching process. And it effectively expands the flexibility of selecting output for floating high voltage in different power domains.
  • Figure 1 is a schematic diagram of the wiring of the floating power supply selection circuit in the traditional comparator mode.
  • Figure 2 is another illustration of a floating power supply selection circuit in a conventional comparator mode.
  • Figure 3 is a schematic diagram of the wiring of the floating high voltage selection circuit of the present invention.
  • the designer of the present invention conducted a comprehensive analysis of the lack of output performance of the traditional comparator mode floating power supply selection circuit when the high voltage source is relatively close, and combined his own experience and creative work, committed to the improvement of the circuit output performance and the application of high voltage source selection Expanding the scope, innovatively proposes an optimized design of floating high voltage selection circuit.
  • a fully differential amplifier that linearly and smoothly switches the high-voltage source is connected to the control switch of the comparator voltage selection to solve the jump of switching the high-voltage source.
  • the fully differential amplifier in the floating high voltage selection circuit consists of resistors R1, R2, PMOS tubes MP3, MP4, and NMOS tubes MN1, MN2, MN3, and MN4. ⁇ constitutes.
  • the gate and drain connections of the PMOS transistors MP1 and MP2 in the comparator have been adjusted, so that the switching control can be signal optimized and improved.
  • MN1 and MN4 are connected to form a current mirror with a common source and ground
  • the common gate of MN1 and MN4 is connected to the common drain of MN4 and MP4.
  • MP4 The gate of MN1 and the source of MP2 in the comparator are connected to the voltage signal VSEN_2, and the drain of MN1 is connected in series with the resistor R1 and the drain of MP1 in the comparator in turn, and is connected to the gate of MP1 as a switching signal.
  • MN2 and MN3 are also connected to form another current mirror with a common source and ground.
  • MP3 and MP4 are connected to a common source to provide a voltage drop basis for selection control and switching signal transmission, and the common drain of MP1 and MP2 is the selected output voltage VDD_SEL.
  • the specific implementation of the switching signal for selection control is introduced as follows. First, the dashed frame part in FIG. 1 and the resistors Rsen1 and Rsen2 are omitted, that is, the voltage signal VSEN_1 is the high voltage source VDD1, and the voltage signal VSEN_2 is the high voltage source VDD2.
  • the high-voltage selection circuit can also be extended to switch between more power domains.
  • the types of power domains are also differentiated. You can set the resistance Rsenx to be equal, and the power domain is the summed average value of the high voltage sources; you can also set the resistance Rsenx to be different, so the power domain is The average of high voltage sources under different weights.
  • the voltage signal VSEN_1 is the average value of the power domain 1
  • the power domain 1 is a number of high voltage sources VDD2N-1 connected in parallel to the source of MP1 with equivalent resistances
  • N is the number of high voltage sources in the power domain 1
  • VSEN_1 ( VDD1+VDD3+...+VDD2N-1)/N.
  • N 2
  • VSEN_1 (VDD1+VDD3)/2
  • the voltage signal VSEN_2 is the average value of power domain 2.
  • the voltage signal VSEN_1 is the weighted average value of the power domain 1, which is a number of high voltage sources VDD2N-1 connected in parallel to the source of MP1 with difference resistors, and N is the number of high voltage sources in the power domain 1.
  • the voltage signal VSEN_2 is set in the same way.
  • the high-voltage selection circuit can select output from two separate high-voltage sources, select output in two power domains, or select output in a single high-voltage source and one power domain, with significant flexibility .
  • the floating high-voltage selection circuit design of the present invention has outstanding substantive features and significant advancement: the voltage selection switch is controlled by a fully differential low-gain amplifier to conduct simultaneously in an interval. It can realize a linear and smooth high-voltage source switching process, and effectively expand the flexibility of selecting output for floating high-voltage in different power domains.

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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

本发明揭示了一种应用于多高压源的浮动高压选择电路，以比较器为基础，其特征在于：在比较器电压选择的控制开关连接一个线性平滑切换高压源的全差分放大器。通过高压源间大小比较的结果改变全差分放大器中PMOS管的导通与关断状态，并通过电流镜和传递生成压降的方式传递开关信号；并在高压源接近状态下同时导通两路取均值，使高压选择平滑切换。应用本发明的浮动高压选择电路设计，通过全差分的低增益放大器控制电压选择开关在一个区间同时导通，能够实现线性平滑的高压源切换过程，并且有效拓展了针对不同电源域浮动高压选择输出的灵活性。

Description

应用于多高压源的浮动高压选择电路 技术领域
本发明涉及一种浮动式高压选择电路，尤其涉及一种能够抑制切换瞬间电压跳变的高压选择电路改良。
背景技术
在集成电路设计过程中，会涉及到一种针对浮动高压进行选择输出控制的电路，以满足整体电路对高压源的需求。传统此类电路通常采用带迟滞的比较器来实现判断两路输入电压的高低、并通过比较器输出的控制开关来选择更高的电压作为输出电压VDD_SEL。其电路结构如图1和图2所示。
该带迟滞的比较器由PMOS管MP1、MP2构成，其中MP1的源极接入一个高压源VDD1、栅极接入开关信号S1_N，MP2的源极接入一个高压源VDD2、栅极接入开关信号S1，且MP1、MP2的共漏极为选择的输出电压VDD_SEL。这里，高压源VDD1和高压源VDD2即为浮动待选的高压源。然而，假设该比较器的迟滞电压为100mV，则每次高压选择发生切换时，输出电压VDD_SEL会同时产生一个100mV的电压跳变。虽然减小该比较器的迟滞电压可以减小电压跳变的程度。但在电压源VDD1/VDD2比较接近时，会出现比较器输出一直在0和1之间跳变，产生两个电压切换来回震荡的问题，选择电路输出性能较差。
发明内容
鉴于上述现有技术存在的缺陷，本发明的目的旨在提出一种应用于多高压源的浮动高压选择电路，解决切换高压源的跳变性。
为了达到上述目的，本发明所采用的技术解决方案为，应用于多高压源的浮动高压选择电路，以比较器为基础，其特征在于：在比较器电压选择的控制开关连接一个线性平滑切换高压源的全差分放大器。
进一步地，所述比较器由PMOS管MP1、MP2构成，其中MP1的源极接入一个高压源VDD1、栅极接入开关信号S1_N，MP2的源极接入一个高压源VDD2、栅极接入开关信号S1，且MP1、MP2的共漏极为选择的输出电压VDD_SEL。
进一步地，所述全差分放大器由电阻R1、R2，PMOS管MP3、MP4，NMOS管MN1、MN2、MN3、MN4相接构成，其中MN1、MN4相接构成共源接地的一个电流镜，MN1、MN4的共栅极与MN4、MP4的共漏极相连接，MP4的栅极与比较器中的MP2的源极相接于电压信号VSEN_2，MN1的漏极依次串联电阻R1和比较器中MP1的漏极并作为一个开关信号接入MP1的栅极；MN2、MN3相接构成共源接地的另一个电流镜，MN2、MN3的共栅极与MN3、MP3的共漏极相连接，MP3的栅极与比较器中的MP1的源极相接于电压信号VSEN_1，MN2的漏极依次串联电阻R2和比较器中MP2的漏极并作为一个开关信号接入MP2的栅极；MP3、MP4共源接电流源，且MP1、MP2的共漏极为选择的输出电压VDD_SEL。
更进一步地，所述电压信号VSEN_1为电源域1的均值，所述电源域1为等值电阻并联接入MP1源极的数个高压源VDD2N-1，N为电源域1中高压源的数量，VSEN_1＝(VDD1+VDD3+…+VDD2N-1)/N。
更进一步地，所述电压信号VSEN_1为电源域1的加权均值，所述电源域1为差值电阻并联接入MP1源极的数个高压源VDD2N-1，N为电源域1中高压源的数量。
更进一步地，所述电压信号VSEN_2为电源域2的均值，所述电源域2为等值电阻并联接入MP2源极的数个高压源VDD2N，N为电源域2中高压源的数量，VSEN_2＝(VDD2+VDD4+…+VDD2N)/N。
更进一步地，所述电压信号VSEN_2为电源域2的加权均值，所述电源域2为差值电阻并联接入MP2源极的数个高压源VDD2N，N为电源域2中高压源的数量。
应用本发明的浮动高压选择电路设计，具备突出的实质性特点和显著的进步性：通过全差分的低增益放大器控制电压选择开关在一个区间同时导通，能够实现线性平滑的高压源切换过程，并且有效拓展了针对不同电源域浮动高压选择输出的灵活性。
附图说明
图1是传统比较器模式的浮动电源选择电路的接线示意图。
图2是传统比较器模式的浮动电源选择电路的另一图示。
图3是本发明浮动高压选择电路的接线示意图。
具体实施方式
以下便结合实施例附图，对本发明的具体实施方式作进一步的详述，以使本发明技术方案更易于理解、掌握，从而对本发明的保护范围做出更为清晰的界定。
本发明设计者针对传统比较器模式的浮动电源选择电路在高压源比较接近时输出性能的不足进行了综合分析，结合自身经验和创造性劳动，致力于对该电路输出性能的提升和高压源选择应用范围的拓展，创新提出了一种浮动高压选择电路的优化设计。概括而言，以比较器为基础，在比较器电压选择的控制开关连接一个线性平滑切换高压源的全差分放大器，以解决切换高压源的跳变 性。
为便于更具象化地理解，如图3的接线示意图所示可见，该浮动高压选择电路中的全差分放大器由电阻R1、R2，PMOS管MP3、MP4，NMOS管MN1、MN2、MN3、MN4相接构成。区别于图1所示的传统选择电路，比较器中的PMOS管MP1、MP2的栅极、漏极接线做了调整，由此开关控制得以信号优化及改善。具体以PMOS管MP1的开关控制来看，在全差分放大器中：MN1、MN4相接构成共源接地的一个电流镜，MN1、MN4的共栅极与MN4、MP4的共漏极相连接，MP4的栅极与比较器中MP2的源极相接于电压信号VSEN_2，MN1的漏极依次串联电阻R1和比较器中MP1的漏极并作为一个开关信号接入MP1的栅极。
同样地，以PMOS管MP2的开关控制来看，在全差分放大器中：MN2、MN3也相接构成共源接地的另一个电流镜，MN2、MN3的共栅极与MN3、MP3的共漏极相连接，MP3的栅极与比较器中MP1的源极相接于电压信号VSEN_1，MN2的漏极依次串联电阻R2和比较器中MP2的漏极并作为一个开关信号接入MP2的栅极。此外，MP3、MP4共源接电流源，提供进行选择控制、开关信号传递的压降基础，且MP1、MP2的共漏极为选择的输出电压VDD_SEL。
就该全差分放大器接入后，对选择控制的开关信号而言，其具体实现方式介绍如下。首先省略图1中虚线框部分及电阻Rsen1、Rsen2所示，即电压信号VSEN_1为高压源VDD1，电压信号VSEN_2为高压源VDD2。
在进行高压源选择时，当VDD1远大于VDD2时，MP3关断、MP4导通，电流源I0将流过MN4，并通过电流镜镜像到MN1，由此流过电阻R1产生I0*R1的压降，使得MP1导通。而MN2工作在截至区，由此MP2关断，输出电压VDD_SEL选为VDD1。同理，当VDD2远大于VDD1时，MP4关断、MP3导通，电流源I0 将流过MN3，并通过电流镜镜像到MN2，由此流过电阻R2产生I0*R2的压降，使得MP2导通。而MN1工作在截至区，由此MP1关断，输出电压VDD_SEL选为VDD2。而特别地，当VDD2与VDD1相接近时，电流源I0将在MN3、MN4之中分配，因此在电阻R1、R2中均有电流流过并形成压降，从而使得MP1、MP2同时导通，由此输出电压VDD_SEL选为两个高压源的平均值。
通过以上分析可以得知，当VDD2和VDD1接近时，高压选择电路的两个开关在一个区间同时导通，因此实现了平滑线性的切换的过程。
再请参阅图3中虚线框所示，该高压选择电路还可以拓展到更多电源域之间切换的情况。电源域的种类也有所区分，可以设定其中电阻Rsenx都相等，则电源域为其中各高压源的求和平均值；也可以设定其中电阻Rsenx各不相同，由此则电源域为其中各高压源在不同权重下的平均。
具体地，电压信号VSEN_1为电源域1的均值，该电源域1为等值电阻并联接入MP1源极的数个高压源VDD2N-1，N为电源域1中高压源的数量，VSEN_1＝(VDD1+VDD3+…+VDD2N-1)/N。当N＝2的时候，VSEN_1＝(VDD1+VDD3)/2；当N＝5的时候，VSEN_1＝(VDD1+VDD3+VDD5+VDD7+VDD9)/2，以此类推。同理，电压信号VSEN_2为电源域2的均值，该电源域2为等值电阻并联接入MP2源极的数个高压源VDD2N，N为电源域2中高压源的数量，VSEN_2＝(VDD2+VDD4+…+VDD2N)/N。
另一方面，该电压信号VSEN_1为电源域1的加权均值，该电源域1为差值电阻并联接入MP1源极的数个高压源VDD2N-1，N为电源域1中高压源的数量。电压信号VSEN_2同理设置。实际应用中，该高压选择电路可以在两个单独的高压源中选择输出，可以在两个电源域中选择输出，也可以在单独的一个 高压源和一个电源域中进行选择输出，灵活性显著。
综上结合图示的实施例详述可见，应用本发明的浮动高压选择电路设计，具备突出的实质性特点和显著的进步性：通过全差分的低增益放大器控制电压选择开关在一个区间同时导通，能够实现线性平滑的高压源切换过程，并且有效拓展了针对不同电源域浮动高压选择输出的灵活性。
以上详细描述了本发明的优选实施方式，但是，本发明并不局限于上述特定实施方式，本领域技术人员可以在权利要求的范围内进行修改或者等同变换，均应包含在本发明的保护范围之内。

Claims (7)

  1. 应用于多高压源的浮动高压选择电路，以比较器为基础，其特征在于：在比较器电压选择的控制开关连接一个线性平滑切换高压源的全差分放大器。
  2. 根据权利要求1所述应用于多高压源的浮动高压选择电路，其特征在于：所述比较器由PMOS管MP1、MP2构成，其中MP1的源极接入一个高压源VDD1、栅极接入开关信号S1_N，MP2的源极接入一个高压源VDD2、栅极接入开关信号S1，且MP1、MP2的共漏极为选择的输出电压VDD_SEL。
  3. 根据权利要求1所述应用于多高压源的浮动高压选择电路，其特征在于：所述全差分放大器由电阻R1、R2，PMOS管MP3、MP4，NMOS管MN1、MN2、MN3、MN4相接构成，其中MN1、MN4相接构成共源接地的一个电流镜，MN1、MN4的共栅极与MN4、MP4的共漏极相连接，MP4的栅极与比较器中的MP2的源极相接于电压信号VSEN_2，MN1的漏极依次串联电阻R1和比较器中MP1的漏极并作为一个开关信号接入MP1的栅极；MN2、MN3相接构成共源接地的另一个电流镜，MN2、MN3的共栅极与MN3、MP3的共漏极相连接，MP3的栅极与比较器中的MP1的源极相接于电压信号VSEN_1，MN2的漏极依次串联电阻R2和比较器中MP2的漏极并作为一个开关信号接入MP2的栅极；MP3、MP4共源接电流源，且MP1、MP2的共漏极为选择的输出电压VDD_SEL。
  4. 根据权利要求3所述应用于多高压源的浮动高压选择电路，其特征在于：所述电压信号VSEN_1为电源域1的均值，所述电源域1为等值电阻并联接入MP1源极的数个高压源VDD2N-1，N为电源域1中高压源的数量，VSEN_1＝(VDD1+VDD3+…+VDD2N-1)/N。
  5. 根据权利要求3所述应用于多高压源的浮动高压选择电路，其特征在于： 所述电压信号VSEN_1为电源域1的加权均值，所述电源域1为差值电阻并联接入MP1源极的数个高压源VDD2N-1，N为电源域1中高压源的数量。
  6. 根据权利要求3所述应用于多高压源的浮动高压选择电路，其特征在于：所述电压信号VSEN_2为电源域2的均值，所述电源域2为等值电阻并联接入MP2源极的数个高压源VDD2N，N为电源域2中高压源的数量，VSEN_2＝(VDD2+VDD4+…+VDD2N)/N。
  7. 根据权利要求3所述应用于多高压源的浮动高压选择电路，其特征在于：所述电压信号VSEN_2为电源域2的加权均值，所述电源域2为差值电阻并联接入MP2源极的数个高压源VDD2N，N为电源域2中高压源的数量。
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