WO2020224010A1 - Oled 显示面板及其制备方法 - Google Patents

Oled 显示面板及其制备方法 Download PDF

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Publication number
WO2020224010A1
WO2020224010A1 PCT/CN2019/087917 CN2019087917W WO2020224010A1 WO 2020224010 A1 WO2020224010 A1 WO 2020224010A1 CN 2019087917 W CN2019087917 W CN 2019087917W WO 2020224010 A1 WO2020224010 A1 WO 2020224010A1
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Prior art keywords
layer
pixel definition
sub
definition layer
display panel
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French (fr)
Inventor
李文杰
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating

Definitions

  • the invention relates to the field of display technology, in particular to an OLED display panel and a preparation method thereof.
  • OLED Organic Light Emitting Diode (Organic Electroluminescence Diode) has been widely used due to its good self-luminous characteristics, high contrast, high response speed, and flexible display.
  • OLED displays can achieve full-color display in the following three ways: (1) Use red, green, and blue organic light-emitting materials to directly emit light; (2) White organic light-emitting devices and color filters cooperate; (3) ) The blue light-emitting layer cooperates with the light-color conversion layer.
  • the combination of white organic light-emitting devices and color filters is the current technology route for mass production of large-size OLED displays.
  • Each pixel consists of a white organic light-emitting device and red, green, and blue color filters.
  • White light can pass through the filter.
  • the white light-emitting device is vapor-deposited on the substrate by using an open mask.
  • Due to the low utilization rate of organic materials in order to ensure the display quality of the vapor-deposited white light-emitting device, a large number of vapor deposition process layers are required and the process is complicated.
  • the present invention provides an OLED display panel and a preparation method thereof to solve the existing preparation method of an OLED display panel.
  • a white light-emitting device is prepared by an evaporation method.
  • the use of the evaporation method will reduce the utilization rate of organic materials.
  • the large number of vapor-deposited film layers leads to complicated processes.
  • the present invention provides an OLED display panel, including: a thin film transistor array substrate, a plurality of OLED light emitting elements arranged on the thin film transistor array substrate, and a pixel definition layer arranged on the thin film transistor array substrate; the OLED
  • the light-emitting element includes a first electrode layer, a light-emitting layer, and a second electrode layer.
  • the pixel definition layer includes a main pixel definition layer and a sub-pixel definition layer; wherein the sub-pixel definition layer is provided with at least one first opening, at least An OLED light-emitting element and the main pixel definition layer are disposed in the first opening; the main pixel definition layer is provided with a plurality of second openings, and the OLED light-emitting element is correspondingly disposed in the first opening.
  • the sub-pixel definition layer is an organic photoresist containing fluorine
  • the surface of the sub-pixel definition layer is a hydrophobic surface.
  • the surface of the sub-pixel definition layer facing away from the thin film transistor array substrate is higher than the surface of the main pixel defining layer facing away from the thin film transistor array substrate.
  • the inner wall of the first opening of the sub-pixel definition layer has a climbing structure.
  • the sub-pixel definition layer covers a part of the main pixel definition layer in the first opening.
  • the sub-pixel definition layer is provided with a plurality of the first openings arranged side by side, and the first electrode layers of the plurality of OLED light-emitting elements are arranged at intervals in the first openings Inside.
  • the first opening is elongated.
  • the present invention provides another OLED display panel, including: a thin film transistor array substrate, a plurality of OLED light-emitting elements arranged on the thin film transistor array substrate, and a pixel definition layer arranged on the thin film transistor array substrate;
  • the OLED light emitting element includes a first electrode layer, a light emitting layer, and a second electrode layer.
  • the pixel definition layer includes a main pixel definition layer and a sub pixel definition layer; wherein at least one first opening is opened on the sub pixel definition layer, At least one of the OLED light-emitting element and the main pixel definition layer are disposed in the first opening.
  • a plurality of second openings are opened on the main pixel definition layer, and one of the OLED light-emitting elements is correspondingly disposed in one of the second openings.
  • the surface of the sub-pixel definition layer facing away from the thin film transistor array substrate is higher than the surface of the main pixel defining layer facing away from the thin film transistor array substrate.
  • the inner wall of the first opening of the sub-pixel definition layer has a climbing structure.
  • the sub-pixel definition layer covers a part of the main pixel definition layer in the first opening.
  • the sub-pixel defining layer is an organic photoresist containing fluorine, and the surface of the sub-pixel defining layer is a hydrophobic surface.
  • the sub-pixel definition layer is provided with a plurality of the first openings arranged side by side, and the first electrode layers of the plurality of OLED light-emitting elements are arranged at intervals in the first openings Inside.
  • the first opening is elongated.
  • the sub-pixel definition layer is provided with the first opening, and the pixels of the OLED display panel are all located in the first opening.
  • the sub-pixel definition layer is a closed structure, and the sub-pixel definition layer is arranged around the main pixel definition layer.
  • the present invention also provides a method for manufacturing an OLED display panel, including the following steps:
  • Step S10 providing a thin film transistor array substrate, and forming a first electrode layer on the thin film transistor array substrate;
  • Step S20 forming a main pixel definition layer on the thin film transistor array substrate, and the main pixel definition layer is arranged around the first electrode layer;
  • Step S30 forming a sub-pixel definition layer on the thin film transistor array substrate, the sub-pixel definition layer surrounding the main pixel definition layer;
  • Step S40 forming a light-emitting layer and a second electrode layer on the first electrode layer.
  • the step S40 includes:
  • the step S30 includes:
  • the film thickness of the sub-pixel definition layer is 500-2500 nanometers.
  • the beneficial effect of the present invention is that by adding a sub-pixel definition layer containing a hydrophobic surface, in the process of preparing a white light OLED light-emitting device, it is beneficial to realize a solution manufacturing process, thereby improving the material utilization rate of the white light OLED device.
  • FIG. 1 is a top view of an OLED display panel according to the first embodiment of the invention
  • Figure 2 is a schematic cross-sectional view of A-A' in Figure 1;
  • FIG. 3 is a schematic diagram of the structure of an OLED light-emitting element according to the first embodiment of the present invention.
  • FIG. 4 is a top view of a sub-pixel definition layer according to the first embodiment of the present invention.
  • FIG. 5 is a top view of a main pixel definition layer according to Embodiment 1 of the present invention.
  • FIG. 6 is a top view of an OLED display panel according to the second embodiment of the present invention.
  • Fig. 7 is a schematic cross-sectional view of B-B' in Fig. 4;
  • FIG. 8 is a flow chart of the manufacturing method of the OLED display panel of the present invention.
  • the present invention is directed to the existing method for preparing OLED display panels.
  • the white light-emitting device is prepared by an evaporation method.
  • the use of the evaporation method will reduce the utilization rate of organic materials, and the number of film layers that need to be evaporated is large, resulting in complicated processes. Problem, this embodiment can solve the defect.
  • the present embodiment provides an OLED display panel 100, including TFT (Thin Film Transistor (Thin Film Transistor) array substrate 10, OLED light emitting elements 20 arranged on the thin film transistor array substrate 10, and a pixel definition layer 30 arranged on the thin film transistor array substrate 10.
  • TFT Thin Film Transistor
  • OLED light emitting elements 20 arranged on the thin film transistor array substrate
  • a pixel definition layer 30 arranged on the thin film transistor array substrate 10.
  • the pixel definition layer 30 includes a main pixel definition layer 31 and a sub pixel definition layer 32 arranged around the main pixel definition layer 31.
  • the main pixel definition layer 31 is used to define a pixel area.
  • the layer is used to avoid overflow of the solution during the solution process.
  • the OLED light emitting element 20 includes a first electrode layer 21, a light emitting layer, and a second electrode layer 29.
  • the light emitting layer includes a first light emitting layer 24 and a second light emitting layer 24'.
  • the sub-pixel definition layer 32 is provided with a plurality of first openings 321 side by side, and the first openings 321 penetrate the sub-pixel definition layer 32 in the film thickness direction.
  • a plurality of the OLED light-emitting elements 20 and the main pixel definition layer 31 are disposed in the first opening 321, and the first opening 321 is elongated.
  • the main pixel definition layer 31 located in each of the first openings 321 is provided with a plurality of second openings 311 spaced apart, and the second openings 311 are in the film thickness direction. Through the main pixel definition layer 31.
  • One second opening 311 corresponds to one sub-pixel, and multiple first sub-pixel arrays are distributed on the thin film transistor array substrate. Some elements of the OLED light-emitting element 20 are completely located in the second opening 311, for example, the first electrode layer 21 of the OLED light-emitting element 20 is located in the second opening 311.
  • the surface of the main pixel definition layer 31 facing away from the thin film transistor array substrate 10 is higher than the surface of the first electrode layer 21 facing away from the thin film transistor array substrate 10.
  • the pixel definition layer 31 covers a part of the first electrode layer 21 located in the second opening 311.
  • the surface of the sub-pixel definition layer 32 facing away from the thin film transistor array substrate 10 is higher than the surface of the main pixel defining layer 31 facing away from the thin film transistor array substrate 10.
  • the sub-pixel definition layer 32 covers a part of the main pixel definition layer 31, the inner wall of the first opening 321 is composed of the main pixel definition layer 31 and the sub-pixel definition layer 32, and the first opening 321
  • the inner wall of the sub-pixel definition layer 32 is in a climbing structure. Since the etching solution will have lateral erosion during the process of preparing the sub-pixel definition layer 32, the bottom of the sub-pixel definition layer is susceptible to over-etching, resulting in an inverted trapezoidal structure, thereby affecting the pixels
  • the opening ratio, the climbing structure can alleviate the impact of lateral erosion.
  • the sub-pixel definition layer 32 functions as a barrier and a bearing solution to prevent the solution from overflowing the set preparation area and causing pollution to adjacent areas when the OLED light-emitting element 20 is prepared by a solution process.
  • the sub-pixel defining layer 32 is an organic photoresist containing fluorine elements, and the exposed surface of the sub-pixel defining layer 31 is hydrophobic, which can prevent droplets from accumulating in the process of inkjet printing and other solution processes.
  • the sub-pixel definition layer 32 is an organic photoresist containing fluorine elements, and the exposed surface of the sub-pixel defining layer 31 is hydrophobic, which can prevent droplets from accumulating in the process of inkjet printing and other solution processes.
  • the OLED light emitting element 20 is a white light OLED light emitting element
  • the OLED light emitting element 20 includes a first electrode layer 21, a first hole injection layer 22, a first hole transport layer 23, The first light emitting layer 24, the first electron transport layer 25, the conductive intermediate layer 26, the second hole injection layer 22', the second hole transport layer 23', the electron blocking layer 27, the second light emitting layer 24', the second The electron transport layer 25, the hole injection layer 28, and the second electrode layer 29.
  • the OLED light-emitting element 20 can be prepared by a combination of an evaporation process and a solution process.
  • the OLED light-emitting element 20 at least one element is prepared by a solution process, and the solution process includes inkjet printing and screen printing. Printing, spin coating, slit extrusion coating, blade coating, etc., but not limited to these. If an evaporation method is adopted, an open mask is used, wherein the orthographic projection of the open mask on the thin film transistor array substrate 10 is in the area enclosed by the outer boundary of the sub-pixel definition layer.
  • the first hole injection layer 22, the first hole transport layer 23, and the first light-emitting layer 24 are prepared by inkjet printing, and the film layer after the first light-emitting layer 24 can be It is prepared by evaporation or inkjet printing.
  • the first electrode layer 21 is an anode
  • the anode is a three-layer composite anode structure of indium tin oxide-silver-indium tin oxide
  • the second electrode layer 29 is a cathode
  • the cathode is a composite of magnesium-silver. metal.
  • the opening size of the second opening 311 is determined according to the size of the anode area.
  • the first light-emitting layer 24 is a blue light-emitting layer, and the second light-emitting layer 24' is a yellow light-emitting layer.
  • this embodiment also provides a method for manufacturing an OLED display panel, including:
  • Step S10 providing a thin film transistor array substrate 10, and forming a first electrode layer 21 on the thin film transistor array substrate 10;
  • Indium tin oxide, silver electrode, and indium tin oxide film layers are sequentially vapor-deposited on the surface of the thin film transistor array substrate 10 to form a plurality of first electrode layers 21, and the first electrode layers 21 are composite anodes.
  • Step S20 forming a main pixel definition layer 31 on the thin film transistor array substrate 10, and the main pixel definition layer 31 is disposed around the first electrode layer 21;
  • a silicon oxide film is vapor-deposited on the thin film transistor array substrate 10, and then the silicon oxide film is exposed, developed, etched, and stripped to form the patterned main pixel definition layer 31, and the main pixel definition
  • the film thickness of the layer 31 is 10-100 nanometers
  • the main pixel defining layer 31 is arranged around the first electrode layer 21, and the pattern of the main pixel defining layer between adjacent first electrode layers 21 is discontinuous .
  • Step S30 forming a sub-pixel definition layer 32 on the thin film transistor array substrate 10, the sub-pixel definition layer 32 surrounding the main pixel definition layer 31;
  • An organic photoresist containing fluorine is vapor-deposited on the thin film transistor array substrate 10, and after exposing and developing the organic photoresist, the patterned sub-pixel definition layer 32 is formed.
  • the film of the sub-pixel definition layer 32 The layer thickness is 500-2500 nanometers, and the fluorine element of the organic photoresist after exposure and development overflows to the surface of the organic photoresist, so that the surface of the sub-pixel definition layer 32 formed is hydrophobic;
  • the sub-pixel defining layer 32 is formed around each of the first electrode layers 21, and the surface of the sub-pixel defining layer 32 facing away from the thin film transistor array substrate 10 is higher than the main pixel defining layer 31 is away from the side surface of the thin film transistor array substrate 10.
  • Step S40 forming a light-emitting layer and a second electrode layer 29 on the first electrode layer 21;
  • a first hole injection layer 22, a first hole transport layer 23, and a first light-emitting layer 24 are sequentially formed on the surface of the first electrode layer 21.
  • a light-emitting layer 24 is a blue light-emitting layer;
  • an open mask is used to evaporate the first electron transport layer 25 and the conductive intermediate layer 26 on the surface of the first light-emitting layer 24 in sequence.
  • the area of the open mask is surrounded by the outer boundary of the sub-pixel definition layer 32 Specifically, the shortest distance from the boundary of the open mask to the outer boundary of the sub-pixel definition layer 32 is 5-50 microns;
  • a second hole injection layer 22', a second hole transport layer 23', an electron blocking layer 27, and a second light emitting layer are sequentially formed on the surface of the conductive intermediate layer 26.
  • an open mask is used to evaporate a magnesium-silver composite metal material on the hole injection layer 28 to form the second electrode layer 29, and the second electrode layer 29 is a cathode.
  • the method further includes packaging the OLED light-emitting element 20, and the specific packaging method can refer to the prior art, which will not be repeated here.
  • the method combines inkjet printing technology and evaporation technology, which is flexible and can improve the utilization rate of OLED light-emitting elements
  • a first opening is opened on the sub-pixel definition layer 32, and the pixels of the OLED display panel are all located in the first opening, that is, the solid center of the sub-pixel definition layer 32 Partly arranged at the periphery of the thin film transistor array substrate.
  • the sub-pixel definition layer 32 is a closed structure, the sub-pixel definition layer is arranged around the main pixel definition layer 31, and the surface of the sub-pixel definition layer 32 facing away from the thin film transistor array substrate 10 is higher than The main pixel definition layer 31 is a surface facing away from the thin film transistor array substrate 10.
  • the sub-pixel definition layer 32 in this embodiment is only provided on the periphery of the thin film transistor array substrate 10.
  • the purpose of this design is to prevent ink overflow during the printing process, and the use of Under the premise of this design, an open mask can be used for film evaporation.
  • Beneficial effects by adding a sub-pixel definition layer containing a hydrophobic surface, in the process of preparing a white light OLED light-emitting device, it is beneficial to realize a solution manufacturing process, thereby improving the material utilization rate of the white light OLED device.

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Abstract

一种OLED显示面板（100），包括薄膜晶体管阵列基板（10）、OLED发光元件（20）以及像素定义层（30），像素定义层（30）包括主像素定义层（31）和具有至少一第一开口（321）的次像素定义层（32），至少一OLED发光元件（20）和主像素定义层（31）设置于第一开口（321）内。通过设置含有疏水性表面的次像素定义层（32），在制备白光OLED发光器件过程中，有利于实现溶液制程，进而提升白光OLED器件的材料利用率。

Description

OLED显示面板及其制备方法 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示面板及其制备方法。
 背景技术
OLED (Organic Light Emitting Diode,有机电致发光二极管)以其良好的自发光特性、高对比度、高反应速度以及柔性显示等优势，得到了广泛应用。目前，OLED显示器实现全彩显示的方式有以下三种：（1）、采用红、绿、蓝三种有机发光材料直接发光；（2）、白色有机发光器件和彩色滤光片配合；（3）蓝色发光层和光色转换层配合。
白色有机发光器件和彩色滤光片配合发光是目前大尺寸OLED显示器量产的技术路线，每个像素由白色有机发光器件和红、绿、蓝三色滤光片组成，白光通过滤光片可获得三基色，进而实现全彩显示。通过采用开放式掩模板在基板上蒸镀白色发光器件，但是由于有机材料的利用率低，为了保证蒸镀的白色发光器件的显示品质，需要的蒸镀制程层数多，工艺复杂。
 技术问题
本发明提供一种OLED显示面板及其制备方法，以解决现有的OLED显示面板的制备方法，通过蒸镀方法来制备白色发光器件，而采用蒸镀方法会导致有机材料的利用率降低，需要蒸镀的膜层数量多，进而导致工艺复杂的问题。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种OLED显示面板，包括：薄膜晶体管阵列基板、设置于所述薄膜晶体管阵列基板上的多个OLED发光元件、以及设置于所述薄膜晶体管阵列基板上的像素定义层；所述OLED发光元件包括第一电极层、发光层、第二电极层，所述像素定义层包括主像素定义层和次像素定义层；其中，所述次像素定义层上开设有至少一第一开口，至少一所述OLED发光元件和所述主像素定义层设置于所述第一开口内；所述主像素定义层上开设有多个第二开口，一所述OLED发光元件对应设置于一所述第二开口内；所述次像素定义层为含有氟元素的有机光阻，所述次像素定义层的表面为疏水性表面。
在本发明的一种实施例中，所述次像素定义层背离所述薄膜晶体管阵列基板的一侧表面高于所述主像素定义层背离所述薄膜晶体管阵列基板的一侧表面。
在本发明的一种实施例中，所述次像素定义层的第一开口的内壁呈爬坡式结构。
在本发明的一种实施例中，所述次像素定义层覆盖所述第一开口内的所述主像素定义层的一部分。
在本发明的一种实施例中，所述次像素定义层上开设有多个并排设置的所述第一开口，多个所述OLED发光元件的第一电极层间隔设置于所述第一开口内。
在本发明的一种实施例中，所述第一开口为长条形。
本发明提供另一种OLED显示面板，包括：薄膜晶体管阵列基板、设置于所述薄膜晶体管阵列基板上的多个OLED发光元件、以及设置于所述薄膜晶体管阵列基板上的像素定义层；所述OLED发光元件包括第一电极层、发光层、第二电极层，所述像素定义层包括主像素定义层和次像素定义层；其中，所述次像素定义层上开设有至少一第一开口，至少一所述OLED发光元件和所述主像素定义层设置于所述第一开口内。
在本发明的一种实施例中，所述主像素定义层上开设有多个第二开口，一所述OLED发光元件对应设置于一所述第二开口内。
在本发明的一种实施例中，所述次像素定义层背离所述薄膜晶体管阵列基板的一侧表面高于所述主像素定义层背离所述薄膜晶体管阵列基板的一侧表面。
在本发明的一种实施例中，所述次像素定义层的第一开口的内壁呈爬坡式结构。
在本发明的一种实施例中，所述次像素定义层覆盖所述第一开口内的所述主像素定义层的一部分。
在本发明的一种实施例中，所述次像素定义层为含有氟元素的有机光阻，所述次像素定义层的表面为疏水性表面。
在本发明的一种实施例中，所述次像素定义层上开设有多个并排设置的所述第一开口，多个所述OLED发光元件的第一电极层间隔设置于所述第一开口内。
在本发明的一种实施例中，所述第一开口为长条形。
在本发明的一种实施例中，所述次像素定义层上开设有一个所述第一开口，所述OLED显示面板的像素均位于所述第一开口内。
在本发明的一种实施例中，所述次像素定义层为闭合式结构，且所述次像素定义层围绕所述主像素定义层设置。
本发明还提供一种OLED显示面板的制备方法，包括以下步骤：
步骤S10，提供一薄膜晶体管阵列基板，在所述薄膜晶体管阵列基板上形成第一电极层；
步骤S20，在所述薄膜晶体管阵列基板上形成主像素定义层，所述主像素定义层围绕所述第一电极层设置；
步骤S30，在所述薄膜晶体管阵列基板上形成次像素定义层，所述次像素定义层围绕所述主像素定义层；
步骤S40，在所述第一电极层上形成发光层和第二电极层。
在本发明的一种实施例中，所述步骤S40包括：
S401,利用溶液制程，在所述第一电极层上依次形成第一空穴注入层、第一空穴传输层、第一发光层；
S402, 利用开放式掩模板，在所述蓝光发光材料层上依次蒸镀第一电子传输层和导电中间层；
S403，利用溶液制程，在所述导电中间层上依次形成第二空穴注入层、第二空穴传输层、电子阻挡层、第二发光层、第二电子传输层、以及空穴阻挡层；
S404，利用开放式掩模板，在所述空穴阻挡层上蒸镀第二电极层。
在本发明的一种实施例中，所述步骤S30包括：
S301，在所述薄膜晶体管阵列基板上蒸镀含有氟元素的有机光阻；
S302，对所述有机光阻曝光、显影后，形成图案化的所述次像素定义层。
在本发明的一种实施例中，所述次像素定义层的膜层厚度为500~2500纳米。
 有益效果
本发明的有益效果为：通过增加一层含有疏水性表面的次像素定义层，在制备白光OLED发光器件过程中，有利于实现溶液制程，进而提升白光OLED器件的材料利用率。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例一的OLED显示面板的俯视图；
图2为图1中A-A’的截面示意图；
图3为本发明实施一的OLED发光元件的结构示意图；
图4为本发明实施例一的次像素定义层的俯视图；
图5为本发明实施例一的主像素定义层的俯视图；
图6为本发明实施例二的OLED显示面板的俯视图；
图7为图4中B-B’的截面示意图；
图8为本发明的OLED显示面板的制备方法的流程图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明针对现有的OLED显示面板的制备方法，通过蒸镀方法来制备白色发光器件，而采用蒸镀方法会导致有机材料的利用率降低，需要蒸镀的膜层数量多，导致工艺复杂的问题，本实施例能够解决该缺陷。
实施例一
如图1~图3所示，本实施例提供一种OLED显示面板100，包括TFT（Thin Film Transistor，薄膜晶体管）阵列基板10、设置于所述薄膜晶体管阵列基板10上的OLED发光元件20、以及设置于所述薄膜晶体管阵列基板10上的像素定义层30。
其中，所述像素定义层30包括主像素定义层31和围绕所述主像素定义层31设置的次像素定义层32，所述主像素定义层31用以定义出像素区域，所述次像素定义层用以避免在溶液制程过程中溶液的溢流。
所述OLED发光元件20包括第一电极层21、发光层、以及第二电极层29，所述发光层包括第一发光层24和第二发光层24’。
如图1和图4所示，所述次像素定义层32上并排设置有多个第一开口321，所述第一开口321在膜层厚度方向上贯穿所述次像素定义层32。多个所述OLED发光元件20和所述主像素定义层31设置于所述第一开口321内，所述第一开口321为长条形。
如图1和图5所示，位于每一所述第一开口321内的所述主像素定义层31上间隔开设有多个第二开口311，所述第二开口311在膜层厚度方向上贯穿所述主像素定义层31。
一个所述第二开口311对应于一个子像素，多个所述第一子像素阵列分布在所述薄膜晶体管阵列基板上。所述OLED发光元件20的部分元件完全位于所述第二开口311内，比如所述OLED发光元件20的第一电极层21位于所述第二开口311内。
如图2所示，所述主像素定义层31背离所述薄膜晶体管阵列基板10一侧的表面高于所述第一电极层21背离所述薄膜晶体管阵列基板10一侧的表面，所述主像素定义层31覆盖位于所述第二开口311内的第一电极层21的一部分。
所述次像素定义层32背离所述薄膜晶体管阵列基板10一侧的表面高于所述主像素定义层31背离所述薄膜晶体管阵列基板10一侧的表面。
所述次像素定义层32覆盖所述主像素定义层31的一部分，所述第一开口321的内壁由所述主像素定义层31和所述次像素定义层32组成，所述第一开口321的内壁呈爬坡式结构，由于在制备所述次像素定义层32的过程中，刻蚀液会存在横向侵蚀，次像素定义层的底部易受到过刻蚀，造成倒梯形结构，进而影响像素开口率，爬坡式结构可以缓解横向侵蚀造成的影响。
所述次像素定义层32起到作为挡墙和承载溶液的作用，避免在利用溶液制程来制备所述OLED发光元件20时，溶液溢出设定的制备区域，对相邻区域造成污染。所述次像素定义层32为含有氟元素的有机光阻，所述次像素定义层31裸露在外的表面具有疏水性，在进行喷墨打印等溶液制程的过程中，能够避免液滴累积在所述次像素定义层32上。
如图3所示，所述OLED发光元件20为白光OLED发光元件，所述OLED发光元件20包括依次形成的第一电极层21、第一空穴注入层22、第一空穴传输层23、第一发光层24、第一电子传输层25、导电中间层26、第二空穴注入层22’、第二空穴传输层23’、电子阻挡层27、第二发光层24’、第二电子传输层25、空穴注入层28、以及第二电极层29。
所述OLED发光元件20可采用蒸镀制程和溶液制程相结合的方式制备，所述OLED发光元件20中，至少有一个元件采用溶液制程的方式制备，所述溶液制程包括喷墨打印、丝网印刷、旋涂、狭缝式挤压涂布、刮涂等方式，但不限于这些。若采用蒸镀方式，则采用开放式掩模板，其中，所述开放式掩模板在所述薄膜晶体管阵列基板10上的正投影在所述次像素定义层的外边界所围成的区域内。
具体地，所述第一空穴注入层22、所述第一空穴传输层23、以及所述第一发光层24采用喷墨打印方式制备，所述第一发光层24之后的膜层可采用蒸镀或喷墨打印方式制备。
其中，所述第一电极层21为阳极，所述阳极为氧化铟锡-银-氧化铟锡三层复合阳极结构，所述第二电极层29为阴极，所述阴极为镁-银的复合金属。所述第二开口311的开口大小根据所述阳极面积的大小确定。
所述第一发光层24为蓝色发光层，所述第二发光层24’为黄色发光层。
如图8所示，本实施例还提供一种OLED显示面板的制备方法，包括：
步骤S10，提供一薄膜晶体管阵列基板10，在所述薄膜晶体管阵列基板10上形成第一电极层21；
在所述薄膜晶体管阵列基板10表面依次蒸镀氧化铟锡、银电极、氧化铟锡膜层，形成多个第一电极层21，所述第一电极层21为复合阳极。
步骤S20，在所述薄膜晶体管阵列基板10上形成主像素定义层31，所述主像素定义层31围绕所述第一电极层21设置；
在所述薄膜晶体管阵列基板10上蒸镀氧化硅薄膜，之后对该氧化硅薄膜进行曝光、显影，刻蚀、剥离等制程，形成图案化的所述主像素定义层31，所述主像素定义层31的膜层厚度为10~100纳米，所述主像素定义层31围绕所述第一电极层21设置，相邻的所述第一电极层21之间的主像素定义层的图案不连续。
步骤S30，在所述薄膜晶体管阵列基板10上形成次像素定义层32，所述次像素定义层32围绕所述主像素定义层31；
在所述薄膜晶体管阵列基板10上蒸镀含有氟元素的有机光阻，对该有机光阻曝光、显影后，形成图案化的所述次像素定义层32，所述次像素定义层32的膜层厚度为500~2500纳米，经过曝光、显影后的有机光阻的氟元素溢出到该有机光阻的表面，使得形成的所述次像素定义层32的表面具有疏水性；
每一所述第一电极层21的四周均形成有所述次像素定义层32，且所述次像素定义层32背离所述薄膜晶体管阵列基板10的一侧表面高于所述主像素定义层31背离所述薄膜晶体管阵列基板10的一侧表面。
步骤S40，在所述第一电极层21上形成发光层和第二电极层29；
首先利用溶液制程，具体采用喷墨打印的方式，在所述第一电极层21表面依次形成第一空穴注入层22、第一空穴传输层23、以及第一发光层24，所述第一发光层24为蓝色发光层；
再利用开放式掩模板在所述第一发光层24表面依次蒸镀第一电子传输层25和导电中间层26，所述开放式掩模板的面积在所述次像素定义层32的外边界围城的区域内，具体地，所述开放式掩模板的边界到所述次像素定义层32的外边界最短的距离为5~50微米；
之后，利用溶液制程，具体采用喷墨打印的方式，在所述导电中间层26表面依次形成第二空穴注入层22’、第二空穴传输层23’、电子阻挡层27、第二发光层24’、第二电子传输层25、空穴注入层28；
最后，利用开放式掩模板在所述空穴注入层28上蒸镀镁-银的复合金属材料，形成所述第二电极层29，所述第二电极层29为阴极。
所述方法还包括对所述OLED发光元件20进行封装，具体封装方法可参考现有技术，这里不再赘述。
所述方法将喷墨打印技术与蒸镀技术相结合，方式灵活，且能提高OLED发光元件的利用率
实施例二
如图6和图7所示，所述次像素定义层32上开设有一个第一开口，所述OLED显示面板的像素均位于所述第一开口内，即所述次像素定义层32的实心部分设置于所述薄膜晶体管阵列基板的周边。
所述次像素定义层32为闭合式结构，所述次像素定义层围绕所述主像素定义层31设置，且所述次像素定义层32背离所述薄膜晶体管阵列基板10一侧的表面高于所述主像素定义层31背离所述薄膜晶体管阵列基板10一侧的表面。
与实施例一相比，本实施例中的次像素定义层32仅设置在所述薄膜晶体管阵列基板10的周边，采用此设计的目的，是防止打印过程中墨水溢流的作用，且在采用此设计的前提下，可采用开放式掩模板进行膜层的蒸镀。
其他结构均与实施例一相同，具体可参考实施例一。
有益效果：通过增加一层含有疏水性表面的次像素定义层，在制备白光OLED发光器件过程中，有利于实现溶液制程，进而提升白光OLED器件的材料利用率。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种OLED显示面板，其中，包括：
    薄膜晶体管阵列基板；
    设置于所述薄膜晶体管阵列基板上的多个OLED发光元
    件，所述OLED发光元件包括第一电极层、发光层、第二电极层；以及
    设置于所述薄膜晶体管阵列基板上的像素定义层，所述像素定义层包括主像素定义层和次像素定义层；其中，
    所述次像素定义层上开设有至少一第一开口，至少一所述OLED发光元件和所述主像素定义层设置于所述第一开口内；
    所述主像素定义层上开设有多个第二开口，一所述OLED发光元件对应设置于一所述第二开口内；
    所述次像素定义层为含有氟元素的有机光阻，所述次像素定义层的表面为疏水性表面。
  2. 根据权利要求1所述的OLED显示面板，其中，所述次像素定义层背离所述薄膜晶体管阵列基板的一侧表面高于所述主像素定义层背离所述薄膜晶体管阵列基板的一侧表面。
  3. 根据权利要求2所述的OLED显示面板，其中，所述次像素定义层的第一开口的内壁呈爬坡式结构。
  4. 根据权利要求2所述的OLED显示面板，其中，所述次像素定义层覆盖所述第一开口内的所述主像素定义层的一部分。
  5. 根据权利要求1所述的OLED显示面板，其中，所述次像素定义层上开设有多个并排设置的所述第一开口，多个所述OLED发光元件的第一电极层间隔设置于所述第一开口内。
  6. 根据权利要求5所述的OLED显示面板，其中，所述第一开口为长条形。
  7. 一种OLED显示面板，其中，包括：
    薄膜晶体管阵列基板；
    设置于所述薄膜晶体管阵列基板上的多个OLED发光元
    件，所述OLED发光元件包括第一电极层、发光层、第二电极层；以及
    设置于所述薄膜晶体管阵列基板上的像素定义层，所述像素定义层包括主像素定义层和次像素定义层；其中，
    所述次像素定义层上开设有至少一第一开口，至少一所述OLED发光元件和所述主像素定义层设置于所述第一开口内。
  8. 根据权利要求7所述的OLED显示面板，其中，所述主像素定义层上开设有多个第二开口，一所述OLED发光元件对应设置于一所述第二开口内。
  9. 根据权利要求8所述的OLED显示面板，其中，所述次像素定义层背离所述薄膜晶体管阵列基板的一侧表面高于所述主像素定义层背离所述薄膜晶体管阵列基板的一侧表面。
  10. 根据权利要求9所述的OLED显示面板，其中，所述次像素定义层的第一开口的内壁呈爬坡式结构。
  11. 根据权利要求9所述的OLED显示面板，其中，所述次像素定义层覆盖所述第一开口内的所述主像素定义层的一部分。
  12. 根据权利要求7所述的OLED显示面板，其中，所述次像素定义层为含有氟元素的有机光阻，所述次像素定义层的表面为疏水性表面。
  13. 根据权利要求8所述的OLED显示面板，其中，所述次像素定义层上开设有多个并排设置的所述第一开口，多个所述OLED发光元件的第一电极层间隔设置于所述第一开口内。
  14. 根据权利要求13所述的OLED显示面板，其中，所述第一开口为长条形。
  15. 根据权利要求8所述的OLED显示面板，其中，所述次像素定义层上开设有一个所述第一开口，所述OLED显示面板的像素均位于所述第一开口内。
  16. 根据权利要求15所述的OLED显示面板，其中，所述次像素定义层为闭合式结构，且所述次像素定义层围绕所述主像素定义层设置。
  17. 一种OLED显示面板的制备方法，其中，包括以下步骤：
    步骤S10，提供一薄膜晶体管阵列基板，在所述薄膜晶体管阵列基板上形成第一电极层；
    步骤S20，在所述薄膜晶体管阵列基板上形成主像素定义层，所述主像素定义层围绕所述第一电极层设置；
    步骤S30，在所述薄膜晶体管阵列基板上形成次像素定义层，所述次像素定义层围绕所述主像素定义层；
    步骤S40，在所述第一电极层上形成发光层和第二电极层。
  18. 根据权利要求17所述的制备方法，其中，所述步骤S40包括：
    S401,利用溶液制程，在所述第一电极层上依次形成第一空穴注入层、第一空穴传输层、第一发光层；
    S402, 利用开放式掩模板，在所述蓝光发光材料层上依次蒸镀第一电子传输层和导电中间层；
    S403，利用溶液制程，在所述导电中间层上依次形成第二空穴注入层、第二空穴传输层、电子阻挡层、第二发光层、第二电子传输层、以及空穴阻挡层；
    S404，利用开放式掩模板，在所述空穴阻挡层上蒸镀第二电极层。
  19. 根据权利要求17所述的制备方法，其中，所述步骤S30包括：
    S301，在所述薄膜晶体管阵列基板上蒸镀含有氟元素的有机光阻；
    S302，对所述有机光阻曝光、显影后，形成图案化的所述次像素定义层。
  20. 根据权利要求19所述的制备方法，其中，所述次像素定义层的膜层厚度为500~2500纳米。
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