WO2020224010A1 - Panneau d'affichage à oled et son procédé de fabrication - Google Patents

Panneau d'affichage à oled et son procédé de fabrication Download PDF

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Publication number
WO2020224010A1
WO2020224010A1 PCT/CN2019/087917 CN2019087917W WO2020224010A1 WO 2020224010 A1 WO2020224010 A1 WO 2020224010A1 CN 2019087917 W CN2019087917 W CN 2019087917W WO 2020224010 A1 WO2020224010 A1 WO 2020224010A1
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WO
WIPO (PCT)
Prior art keywords
layer
pixel definition
sub
definition layer
display panel
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Application number
PCT/CN2019/087917
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English (en)
Chinese (zh)
Inventor
李文杰
Original Assignee
深圳市华星光电半导体显示技术有限公司
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Publication of WO2020224010A1 publication Critical patent/WO2020224010A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating

Definitions

  • the invention relates to the field of display technology, in particular to an OLED display panel and a preparation method thereof.
  • OLED Organic Light Emitting Diode (Organic Electroluminescence Diode) has been widely used due to its good self-luminous characteristics, high contrast, high response speed, and flexible display.
  • OLED displays can achieve full-color display in the following three ways: (1) Use red, green, and blue organic light-emitting materials to directly emit light; (2) White organic light-emitting devices and color filters cooperate; (3) ) The blue light-emitting layer cooperates with the light-color conversion layer.
  • the combination of white organic light-emitting devices and color filters is the current technology route for mass production of large-size OLED displays.
  • Each pixel consists of a white organic light-emitting device and red, green, and blue color filters.
  • White light can pass through the filter.
  • the white light-emitting device is vapor-deposited on the substrate by using an open mask.
  • Due to the low utilization rate of organic materials in order to ensure the display quality of the vapor-deposited white light-emitting device, a large number of vapor deposition process layers are required and the process is complicated.
  • the present invention provides an OLED display panel and a preparation method thereof to solve the existing preparation method of an OLED display panel.
  • a white light-emitting device is prepared by an evaporation method.
  • the use of the evaporation method will reduce the utilization rate of organic materials.
  • the large number of vapor-deposited film layers leads to complicated processes.
  • the present invention provides an OLED display panel, including: a thin film transistor array substrate, a plurality of OLED light emitting elements arranged on the thin film transistor array substrate, and a pixel definition layer arranged on the thin film transistor array substrate; the OLED
  • the light-emitting element includes a first electrode layer, a light-emitting layer, and a second electrode layer.
  • the pixel definition layer includes a main pixel definition layer and a sub-pixel definition layer; wherein the sub-pixel definition layer is provided with at least one first opening, at least An OLED light-emitting element and the main pixel definition layer are disposed in the first opening; the main pixel definition layer is provided with a plurality of second openings, and the OLED light-emitting element is correspondingly disposed in the first opening.
  • the sub-pixel definition layer is an organic photoresist containing fluorine
  • the surface of the sub-pixel definition layer is a hydrophobic surface.
  • the surface of the sub-pixel definition layer facing away from the thin film transistor array substrate is higher than the surface of the main pixel defining layer facing away from the thin film transistor array substrate.
  • the inner wall of the first opening of the sub-pixel definition layer has a climbing structure.
  • the sub-pixel definition layer covers a part of the main pixel definition layer in the first opening.
  • the sub-pixel definition layer is provided with a plurality of the first openings arranged side by side, and the first electrode layers of the plurality of OLED light-emitting elements are arranged at intervals in the first openings Inside.
  • the first opening is elongated.
  • the present invention provides another OLED display panel, including: a thin film transistor array substrate, a plurality of OLED light-emitting elements arranged on the thin film transistor array substrate, and a pixel definition layer arranged on the thin film transistor array substrate;
  • the OLED light emitting element includes a first electrode layer, a light emitting layer, and a second electrode layer.
  • the pixel definition layer includes a main pixel definition layer and a sub pixel definition layer; wherein at least one first opening is opened on the sub pixel definition layer, At least one of the OLED light-emitting element and the main pixel definition layer are disposed in the first opening.
  • a plurality of second openings are opened on the main pixel definition layer, and one of the OLED light-emitting elements is correspondingly disposed in one of the second openings.
  • the surface of the sub-pixel definition layer facing away from the thin film transistor array substrate is higher than the surface of the main pixel defining layer facing away from the thin film transistor array substrate.
  • the inner wall of the first opening of the sub-pixel definition layer has a climbing structure.
  • the sub-pixel definition layer covers a part of the main pixel definition layer in the first opening.
  • the sub-pixel defining layer is an organic photoresist containing fluorine, and the surface of the sub-pixel defining layer is a hydrophobic surface.
  • the sub-pixel definition layer is provided with a plurality of the first openings arranged side by side, and the first electrode layers of the plurality of OLED light-emitting elements are arranged at intervals in the first openings Inside.
  • the first opening is elongated.
  • the sub-pixel definition layer is provided with the first opening, and the pixels of the OLED display panel are all located in the first opening.
  • the sub-pixel definition layer is a closed structure, and the sub-pixel definition layer is arranged around the main pixel definition layer.
  • the present invention also provides a method for manufacturing an OLED display panel, including the following steps:
  • Step S10 providing a thin film transistor array substrate, and forming a first electrode layer on the thin film transistor array substrate;
  • Step S20 forming a main pixel definition layer on the thin film transistor array substrate, and the main pixel definition layer is arranged around the first electrode layer;
  • Step S30 forming a sub-pixel definition layer on the thin film transistor array substrate, the sub-pixel definition layer surrounding the main pixel definition layer;
  • Step S40 forming a light-emitting layer and a second electrode layer on the first electrode layer.
  • the step S40 includes:
  • the step S30 includes:
  • the film thickness of the sub-pixel definition layer is 500-2500 nanometers.
  • the beneficial effect of the present invention is that by adding a sub-pixel definition layer containing a hydrophobic surface, in the process of preparing a white light OLED light-emitting device, it is beneficial to realize a solution manufacturing process, thereby improving the material utilization rate of the white light OLED device.
  • FIG. 1 is a top view of an OLED display panel according to the first embodiment of the invention
  • Figure 2 is a schematic cross-sectional view of A-A' in Figure 1;
  • FIG. 3 is a schematic diagram of the structure of an OLED light-emitting element according to the first embodiment of the present invention.
  • FIG. 4 is a top view of a sub-pixel definition layer according to the first embodiment of the present invention.
  • FIG. 5 is a top view of a main pixel definition layer according to Embodiment 1 of the present invention.
  • FIG. 6 is a top view of an OLED display panel according to the second embodiment of the present invention.
  • Fig. 7 is a schematic cross-sectional view of B-B' in Fig. 4;
  • FIG. 8 is a flow chart of the manufacturing method of the OLED display panel of the present invention.
  • the present invention is directed to the existing method for preparing OLED display panels.
  • the white light-emitting device is prepared by an evaporation method.
  • the use of the evaporation method will reduce the utilization rate of organic materials, and the number of film layers that need to be evaporated is large, resulting in complicated processes. Problem, this embodiment can solve the defect.
  • the present embodiment provides an OLED display panel 100, including TFT (Thin Film Transistor (Thin Film Transistor) array substrate 10, OLED light emitting elements 20 arranged on the thin film transistor array substrate 10, and a pixel definition layer 30 arranged on the thin film transistor array substrate 10.
  • TFT Thin Film Transistor
  • OLED light emitting elements 20 arranged on the thin film transistor array substrate
  • a pixel definition layer 30 arranged on the thin film transistor array substrate 10.
  • the pixel definition layer 30 includes a main pixel definition layer 31 and a sub pixel definition layer 32 arranged around the main pixel definition layer 31.
  • the main pixel definition layer 31 is used to define a pixel area.
  • the layer is used to avoid overflow of the solution during the solution process.
  • the OLED light emitting element 20 includes a first electrode layer 21, a light emitting layer, and a second electrode layer 29.
  • the light emitting layer includes a first light emitting layer 24 and a second light emitting layer 24'.
  • the sub-pixel definition layer 32 is provided with a plurality of first openings 321 side by side, and the first openings 321 penetrate the sub-pixel definition layer 32 in the film thickness direction.
  • a plurality of the OLED light-emitting elements 20 and the main pixel definition layer 31 are disposed in the first opening 321, and the first opening 321 is elongated.
  • the main pixel definition layer 31 located in each of the first openings 321 is provided with a plurality of second openings 311 spaced apart, and the second openings 311 are in the film thickness direction. Through the main pixel definition layer 31.
  • One second opening 311 corresponds to one sub-pixel, and multiple first sub-pixel arrays are distributed on the thin film transistor array substrate. Some elements of the OLED light-emitting element 20 are completely located in the second opening 311, for example, the first electrode layer 21 of the OLED light-emitting element 20 is located in the second opening 311.
  • the surface of the main pixel definition layer 31 facing away from the thin film transistor array substrate 10 is higher than the surface of the first electrode layer 21 facing away from the thin film transistor array substrate 10.
  • the pixel definition layer 31 covers a part of the first electrode layer 21 located in the second opening 311.
  • the surface of the sub-pixel definition layer 32 facing away from the thin film transistor array substrate 10 is higher than the surface of the main pixel defining layer 31 facing away from the thin film transistor array substrate 10.
  • the sub-pixel definition layer 32 covers a part of the main pixel definition layer 31, the inner wall of the first opening 321 is composed of the main pixel definition layer 31 and the sub-pixel definition layer 32, and the first opening 321
  • the inner wall of the sub-pixel definition layer 32 is in a climbing structure. Since the etching solution will have lateral erosion during the process of preparing the sub-pixel definition layer 32, the bottom of the sub-pixel definition layer is susceptible to over-etching, resulting in an inverted trapezoidal structure, thereby affecting the pixels
  • the opening ratio, the climbing structure can alleviate the impact of lateral erosion.
  • the sub-pixel definition layer 32 functions as a barrier and a bearing solution to prevent the solution from overflowing the set preparation area and causing pollution to adjacent areas when the OLED light-emitting element 20 is prepared by a solution process.
  • the sub-pixel defining layer 32 is an organic photoresist containing fluorine elements, and the exposed surface of the sub-pixel defining layer 31 is hydrophobic, which can prevent droplets from accumulating in the process of inkjet printing and other solution processes.
  • the sub-pixel definition layer 32 is an organic photoresist containing fluorine elements, and the exposed surface of the sub-pixel defining layer 31 is hydrophobic, which can prevent droplets from accumulating in the process of inkjet printing and other solution processes.
  • the OLED light emitting element 20 is a white light OLED light emitting element
  • the OLED light emitting element 20 includes a first electrode layer 21, a first hole injection layer 22, a first hole transport layer 23, The first light emitting layer 24, the first electron transport layer 25, the conductive intermediate layer 26, the second hole injection layer 22', the second hole transport layer 23', the electron blocking layer 27, the second light emitting layer 24', the second The electron transport layer 25, the hole injection layer 28, and the second electrode layer 29.
  • the OLED light-emitting element 20 can be prepared by a combination of an evaporation process and a solution process.
  • the OLED light-emitting element 20 at least one element is prepared by a solution process, and the solution process includes inkjet printing and screen printing. Printing, spin coating, slit extrusion coating, blade coating, etc., but not limited to these. If an evaporation method is adopted, an open mask is used, wherein the orthographic projection of the open mask on the thin film transistor array substrate 10 is in the area enclosed by the outer boundary of the sub-pixel definition layer.
  • the first hole injection layer 22, the first hole transport layer 23, and the first light-emitting layer 24 are prepared by inkjet printing, and the film layer after the first light-emitting layer 24 can be It is prepared by evaporation or inkjet printing.
  • the first electrode layer 21 is an anode
  • the anode is a three-layer composite anode structure of indium tin oxide-silver-indium tin oxide
  • the second electrode layer 29 is a cathode
  • the cathode is a composite of magnesium-silver. metal.
  • the opening size of the second opening 311 is determined according to the size of the anode area.
  • the first light-emitting layer 24 is a blue light-emitting layer, and the second light-emitting layer 24' is a yellow light-emitting layer.
  • this embodiment also provides a method for manufacturing an OLED display panel, including:
  • Step S10 providing a thin film transistor array substrate 10, and forming a first electrode layer 21 on the thin film transistor array substrate 10;
  • Indium tin oxide, silver electrode, and indium tin oxide film layers are sequentially vapor-deposited on the surface of the thin film transistor array substrate 10 to form a plurality of first electrode layers 21, and the first electrode layers 21 are composite anodes.
  • Step S20 forming a main pixel definition layer 31 on the thin film transistor array substrate 10, and the main pixel definition layer 31 is disposed around the first electrode layer 21;
  • a silicon oxide film is vapor-deposited on the thin film transistor array substrate 10, and then the silicon oxide film is exposed, developed, etched, and stripped to form the patterned main pixel definition layer 31, and the main pixel definition
  • the film thickness of the layer 31 is 10-100 nanometers
  • the main pixel defining layer 31 is arranged around the first electrode layer 21, and the pattern of the main pixel defining layer between adjacent first electrode layers 21 is discontinuous .
  • Step S30 forming a sub-pixel definition layer 32 on the thin film transistor array substrate 10, the sub-pixel definition layer 32 surrounding the main pixel definition layer 31;
  • An organic photoresist containing fluorine is vapor-deposited on the thin film transistor array substrate 10, and after exposing and developing the organic photoresist, the patterned sub-pixel definition layer 32 is formed.
  • the film of the sub-pixel definition layer 32 The layer thickness is 500-2500 nanometers, and the fluorine element of the organic photoresist after exposure and development overflows to the surface of the organic photoresist, so that the surface of the sub-pixel definition layer 32 formed is hydrophobic;
  • the sub-pixel defining layer 32 is formed around each of the first electrode layers 21, and the surface of the sub-pixel defining layer 32 facing away from the thin film transistor array substrate 10 is higher than the main pixel defining layer 31 is away from the side surface of the thin film transistor array substrate 10.
  • Step S40 forming a light-emitting layer and a second electrode layer 29 on the first electrode layer 21;
  • a first hole injection layer 22, a first hole transport layer 23, and a first light-emitting layer 24 are sequentially formed on the surface of the first electrode layer 21.
  • a light-emitting layer 24 is a blue light-emitting layer;
  • an open mask is used to evaporate the first electron transport layer 25 and the conductive intermediate layer 26 on the surface of the first light-emitting layer 24 in sequence.
  • the area of the open mask is surrounded by the outer boundary of the sub-pixel definition layer 32 Specifically, the shortest distance from the boundary of the open mask to the outer boundary of the sub-pixel definition layer 32 is 5-50 microns;
  • a second hole injection layer 22', a second hole transport layer 23', an electron blocking layer 27, and a second light emitting layer are sequentially formed on the surface of the conductive intermediate layer 26.
  • an open mask is used to evaporate a magnesium-silver composite metal material on the hole injection layer 28 to form the second electrode layer 29, and the second electrode layer 29 is a cathode.
  • the method further includes packaging the OLED light-emitting element 20, and the specific packaging method can refer to the prior art, which will not be repeated here.
  • the method combines inkjet printing technology and evaporation technology, which is flexible and can improve the utilization rate of OLED light-emitting elements
  • a first opening is opened on the sub-pixel definition layer 32, and the pixels of the OLED display panel are all located in the first opening, that is, the solid center of the sub-pixel definition layer 32 Partly arranged at the periphery of the thin film transistor array substrate.
  • the sub-pixel definition layer 32 is a closed structure, the sub-pixel definition layer is arranged around the main pixel definition layer 31, and the surface of the sub-pixel definition layer 32 facing away from the thin film transistor array substrate 10 is higher than The main pixel definition layer 31 is a surface facing away from the thin film transistor array substrate 10.
  • the sub-pixel definition layer 32 in this embodiment is only provided on the periphery of the thin film transistor array substrate 10.
  • the purpose of this design is to prevent ink overflow during the printing process, and the use of Under the premise of this design, an open mask can be used for film evaporation.
  • Beneficial effects by adding a sub-pixel definition layer containing a hydrophobic surface, in the process of preparing a white light OLED light-emitting device, it is beneficial to realize a solution manufacturing process, thereby improving the material utilization rate of the white light OLED device.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un panneau d'affichage à OLED (100), comprenant un substrat matriciel de transistors à couches minces (10), des éléments électroluminescents OLED (20), et une couche de définition de pixel (30). La couche de définition de pixel (30) comprend une couche de définition de pixel principal (31) et une couche de définition de sous-pixel (32) pourvue d'au moins une première ouverture (321), et l'au moins un élément électroluminescent OLED (20) et la couche de définition de pixel principal (31) sont disposés dans la première ouverture (321). En fournissant la couche de définition de sous-pixel (32) ayant une surface hydrophobe, il est avantageux de réaliser un traitement de solution dans le procédé de fabrication d'un dispositif électroluminescent à OLED blanche, ce qui permet d'augmenter le taux d'utilisation de matériau du dispositif à OLED blanche.
PCT/CN2019/087917 2019-05-05 2019-05-22 Panneau d'affichage à oled et son procédé de fabrication WO2020224010A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910366798.4A CN110137225A (zh) 2019-05-05 2019-05-05 Oled显示面板及其制备方法
CN201910366798.4 2019-05-05

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WO2020224010A1 true WO2020224010A1 (fr) 2020-11-12

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Families Citing this family (7)

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CN110707223A (zh) * 2019-09-05 2020-01-17 深圳市华星光电技术有限公司 发光器件以及显示面板
CN110993646B (zh) 2019-11-08 2022-07-12 深圳市华星光电半导体显示技术有限公司 Oled背板的制备方法及oled背板
CN111477663B (zh) * 2020-04-22 2022-10-04 Tcl华星光电技术有限公司 显示面板及显示面板的制备方法
CN111710696B (zh) * 2020-06-04 2023-06-30 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法
CN113097260A (zh) * 2021-03-24 2021-07-09 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法、显示装置
CN113437119A (zh) * 2021-06-10 2021-09-24 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法、显示装置
CN114582939A (zh) * 2022-02-18 2022-06-03 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法、显示装置

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